CN112864091A - Manufacturing method of 25Gbs high-speed modulation DFB laser chip - Google Patents
Manufacturing method of 25Gbs high-speed modulation DFB laser chip Download PDFInfo
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- CN112864091A CN112864091A CN202011618721.0A CN202011618721A CN112864091A CN 112864091 A CN112864091 A CN 112864091A CN 202011618721 A CN202011618721 A CN 202011618721A CN 112864091 A CN112864091 A CN 112864091A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000013078 crystal Substances 0.000 claims abstract description 38
- 238000013461 design Methods 0.000 claims abstract description 31
- 238000001259 photo etching Methods 0.000 claims abstract description 7
- 238000001514 detection method Methods 0.000 claims abstract description 6
- 238000012545 processing Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 13
- 238000004806 packaging method and process Methods 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 8
- 230000008569 process Effects 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 241000272168 Laridae Species 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 238000006552 photochemical reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000001915 proofreading effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a manufacturing method of a 25Gbs high-speed modulation DFB laser chip, which is characterized by comprising the following steps: chip design: designing a DFB laser chip is performed by a plurality of teams; and (3) round crystal production: firstly, photoetching is carried out, then the round crystal is processed, so that the round crystal can reach the specification, the preliminary processing of the round crystal is completed, and the round crystal detection is as follows: the invention preferentially designs the DFB laser in the directions of accuracy, bandwidth and the like, so that the device can calibrate the laser position compared with the traditional device, and the chip can control the laser to cut other objects with high precision.
Description
Technical Field
The invention relates to a chip manufacturing method, in particular to a manufacturing method of a 25Gbs high-speed modulation DFB laser chip, and belongs to the field of chip manufacturing.
Background
The DFB laser, namely the distributed feedback laser, its difference is to set up the Bragg Grating (Bragg Grating) inside, belong to the semiconductor laser of side emission, the DFB laser mainly uses the semiconductor material as the medium, including gallium antimonide, gallium arsenide, indium phosphide, zinc sulfide (ZnS) etc., the DFB laser has very good monochromaticity (namely spectral purity) the biggest characteristic, its line width can be made within 1MHz universally, and have very high Side Mode Suppression Ratio (SMSR), can be as high as more than 40-50 dB.
Meanwhile, the DFB laser is generally controlled by a chip, the existing control chip is simple, the processing speed is slow, and the bandwidth is narrow, thereby causing problems such as easy failure during laser cutting, and the traditional chip manufacturing method is common, and photolithography, etching, thin film (chemical vapor deposition or physical vapor deposition), doping (thermal diffusion or ion implantation), chemical mechanical planarization CMP, wherein the key is the design of the chip, and the design of the chip is also particularly important, and a good design can increase the reaction speed of the chip, and the stability of the chip, and the traditional design scheme is generally detected after the chip is formed, and the method is simple and lagged behind.
Therefore, in view of the above problems, the present invention provides a method for manufacturing a 25Gbs high-speed modulation DFB laser chip.
Disclosure of Invention
The invention aims to provide a manufacturing method of a 25Gbs high-speed modulation DFB laser chip, which solves the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme: a manufacturing method of a 25Gbs high-speed modulation DFB laser chip is characterized by comprising the following steps:
chip design: designing a DFB laser chip by team division, and fusing and redesigning the division part after the team division design is finished;
and (3) round crystal production: firstly, photoetching is carried out, then the round crystal is processed, so that the round crystal reaches the specification, and the primary processing of the round crystal is completed;
detecting the round crystal: the electrical characteristics of each die are tested by probing, and generally, the number of dies owned by each chip is huge, so that a long time of testing is required.
Packaging the chip: fixing the manufactured wafer, binding pins, manufacturing into various corresponding packaging forms through a DIP/QFP/PLCC/QFN mode, packaging the same chip core into different forms, and improving the product capability.
Preferably, when designing a chip, the chip design is performed in a direction of improving the accuracy of use of the DFB laser by giving priority to the application of the DFB laser.
Preferably, when the chip is designed for data export and data access, the existing data adopts a large channel to ensure that the chip can control and calculate the laser equipment in real time, and the overall precision of the laser equipment is achieved.
Preferably, the circular crystal detection is to eliminate a part of the circular crystal when detecting the circular crystal, and meanwhile, when detecting the circular crystal, the design problem in the circular crystal can be searched, so that redesign can be required to enable the circular crystal to reach the optimal level.
Preferably, surface mount packaging is used, finer pin pitch is used, and the pin shape is gull wing or J-shaped, 30-50% less than the equivalent DIP area, and 70% less thick. The package has gull-wing type pins protruding from two long sides, with a pin pitch of 0.05 inch.
Preferably, the wafer is manufactured by using a single crystal silicon wafer or a group III-V, such as gallium arsenide, as a base layer, then using photolithography, doping, CMP and other technologies to manufacture MOSFET or BJT and then using thin film and CMP technologies to manufacture a conducting wire, thus completing the chip manufacturing.
Compared with the prior art, the invention has the beneficial effects that:
this chip is preferred to be designed to the DFB laser instrument, the completion is designed accurate and the equidirectional such as bandwidth to the DFB laser instrument, make its this device compare in traditional device, can calibrate the laser position, make its steerable laser of this chip carry out the cutting of high accuracy to other objects, the object of avoiding cutting out simultaneously takes place the scheduling problem of splits, the bandwidth is higher simultaneously, speed makes its position that can be at any time to laser proofreading faster simultaneously, it is more accurate to accomplish to make this device cutting, simultaneously through adopting special design, it is stronger to make its this device pertinence, it is better to DFB laser instrument control effect.
Drawings
FIG. 1 is a schematic view of the overall process of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the present invention provides a method for manufacturing a 25Gbs high-speed modulation DFB laser chip, comprising the following steps:
chip design: the DFB laser chip is designed by a plurality of teams or a plurality of personnel of a single team, and the design is carried out by the teams or the personnel, so that the chip has a plurality of design schemes, the device is more stable and can be more attached to the DFB laser, and meanwhile, after the design of the teams is finished, the two parties are fused and redesigned, the stability of the design is ensured, the layout design is carried out after the design is finished, and the optimal design scheme is selected by comparison to finish the optimal design in the chip design;
and (3) round crystal production: firstly, photoetching is carried out, a layer of photoresist is coated on the surface of a wafer (or a substrate) and dried, and the dried wafer is conveyed into a photoetching machine. The light passes through a mask to project the pattern on the mask on the photoresist on the surface of the wafer, so as to realize exposure and excite photochemical reaction. The exposed wafer is subjected to a second baking, so-called post-exposure baking, which is a more complete photochemical reaction. Finally, spraying a developing solution on the photoresist on the surface of the wafer, developing the exposure pattern, then processing the round crystal to enable the round crystal to reach the specification, and finishing the primary processing of the round crystal
Detecting the round crystal: the electrical characteristic detection is carried out on each crystal grain in a needle detection mode, the number of the crystal grains owned by each chip is large generally, so that long-time testing is needed, each crystal grain is detected, whether damaged crystal grains appear or not is known, and whether the damage design is optimal or not is judged through different crystal grains.
Packaging the chip: fixing the manufactured wafer, binding pins, manufacturing various corresponding packaging forms through a DIP/QFP/PLCC/QFN mode, packaging cores of the same chip into different forms, improving the product capability, completing different packages according to actual requirements, and increasing the functionality of the chip.
The application of the DFB laser is preferably considered in designing the chip, and the chip is preferably designed in the application of the DFB laser in designing, so that the DFB laser is designed in the directions of improving the use precision and the like.
When the chip is designed for data export and data access, the existing data adopts a large channel to ensure that the chip can control and operate the laser equipment in real time, and the chip can give priority to the problem of the channel during design, so that the device increases the overall precision of the laser equipment.
The method comprises the steps of detecting the round crystal, removing a part of the round crystal when detecting the round crystal, and searching for a design problem in the round crystal when detecting the round crystal, so that redesign can be required to enable the round crystal to reach the optimal level.
The adoption is with the surface-mounted encapsulation, uses thinner foot interval, and the pin shape is gull wing type or J type, simultaneously can, than equal DIP area 30-50% less, and thickness 70% less, and there is gull wing type pin outstanding on two long limits in this kind of encapsulation, and the pin interval is 0.05 inches, adopts the mode of multiple encapsulation to adapt to different users, increases the functional of this chip.
The wafer production uses single crystal silicon wafer or III-V group, such as gallium arsenide, as base layer, and then uses the technologies of photoetching, doping, CMP, etc. to make the MOSFET or BJT, etc., the specific process is that the exposed area on the silicon wafer is put into the chemical ion mixed liquid, this process will change the conductive mode of the doped area, so that each transistor can be switched on, switched off, or carry data, at this time, the process is repeated continuously, the different layers can be connected through the open window, and then the conducting wire is made by using film and CMP technology and then packaged, thus completing the chip production.
In the description of the present invention, it is to be understood that the indicated orientations or positional relationships are based on the orientations or positional relationships shown in the drawings and are only for convenience in describing the present invention and simplifying the description, but are not intended to indicate or imply that the indicated devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are not to be construed as limiting the present invention.
In the present invention, unless otherwise explicitly specified or limited, for example, it may be fixedly attached, detachably attached, or integrated; can be mechanically or electrically connected; the terms may be directly connected or indirectly connected through an intermediate, and may be communication between two elements or interaction relationship between two elements, unless otherwise specifically limited, and the specific meaning of the terms in the present invention will be understood by those skilled in the art according to specific situations.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. A manufacturing method of a 25Gbs high-speed modulation DFB laser chip is characterized by comprising the following steps:
chip design: the DFB laser chip is designed by team division, and meanwhile, after the team division design is finished, the division part is fused and redesigned to ensure the stability of the design, and the layout design is carried out after the design is finished;
and (3) round crystal production: firstly, photoetching is carried out, then the round crystal is processed, so that the round crystal reaches the specification, and the primary processing of the round crystal is completed;
detecting the round crystal: detecting the electrical characteristics of each crystal grain in a needle detection mode;
packaging the chip: and fixing the manufactured wafer, binding pins, and manufacturing into various corresponding packaging forms in a DIP/QFP/PLCC/QFN mode.
2. The method for manufacturing a 25Gbs high-speed modulation DFB laser chip according to claim 1, wherein: the chip design takes into account the application of DFB lasers when designing the chip.
3. The method for manufacturing a 25Gbs high-speed modulation DFB laser chip according to claim 1, wherein: when the chip is designed for data export and data access, the existing data adopts a large channel to ensure that the chip can control and operate laser equipment in real time.
4. The method for manufacturing a 25Gbs high-speed modulation DFB laser chip according to claim 1, wherein: the wafer detection firstly eliminates a part of wafers when detecting the wafers, and simultaneously searches for design problems in the wafers when detecting the wafers.
5. The method for manufacturing a 25Gbs high-speed modulation DFB laser chip according to claim 1, wherein: the chip package adopts surface-mounted package.
6. The method for manufacturing a 25Gbs high-speed modulation DFB laser chip according to claim 1, wherein: the wafer is produced by using a monocrystalline silicon wafer or III-V group as a base layer, then manufacturing components such as MOSFET or BJT by using the technologies such as photoetching, doping, CMP and the like, and then manufacturing a conducting wire by using a thin film and CMP technology.
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| CN202011618721.0A CN112864091A (en) | 2020-12-31 | 2020-12-31 | Manufacturing method of 25Gbs high-speed modulation DFB laser chip |
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| CN202011618721.0A CN112864091A (en) | 2020-12-31 | 2020-12-31 | Manufacturing method of 25Gbs high-speed modulation DFB laser chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113626977A (en) * | 2021-06-22 | 2021-11-09 | 南京光通光电技术有限公司 | High-frequency interconnection method for 25G DFB laser |
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2020
- 2020-12-31 CN CN202011618721.0A patent/CN112864091A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113626977A (en) * | 2021-06-22 | 2021-11-09 | 南京光通光电技术有限公司 | High-frequency interconnection method for 25G DFB laser |
| CN113626977B (en) * | 2021-06-22 | 2023-10-03 | 南京光通光电技术有限公司 | High-frequency interconnection method for 25G DFB laser |
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