CN112838121A - Ring-gate full-control AlGaN/GaN millimeter wave HEMT device and preparation method thereof - Google Patents
Ring-gate full-control AlGaN/GaN millimeter wave HEMT device and preparation method thereof Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 109
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000002090 nanochannel Substances 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 230000004888 barrier function Effects 0.000 claims description 37
- 238000005530 etching Methods 0.000 claims description 31
- 238000001704 evaporation Methods 0.000 claims description 24
- 230000008020 evaporation Effects 0.000 claims description 18
- 238000009616 inductively coupled plasma Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- 238000005566 electron beam evaporation Methods 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 10
- 150000002739 metals Chemical class 0.000 description 12
- 238000001883 metal evaporation Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention relates to a ring-gate full-control AlGaN/GaN millimeter wave HEMT device and a preparation method thereof, wherein the HEMT device comprises: a substrate; a source region portion disposed on one side on the substrate; a drain region portion disposed on the other side of the substrate and disposed opposite to the source region portion; the nano channels are arranged between the source region part and the drain region part at intervals and are suspended above the substrate; a source electrode disposed on the source region portion; a drain electrode disposed on the drain region portion; and the gate electrode is positioned between the source electrode and the drain electrode and is coated on the periphery of the nano channel. The ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device adopts a ring-gate structure with surrounding envelope, improves the gate electrode control force of the AlGaN/GaN device, reduces the short channel effect caused by the small gate length of the radio frequency device, and improves the reliability of the device.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device and a preparation method thereof.
Background
In recent years, GaN-based high electron mobility transistors have achieved a number of remarkable research results in the field of radio frequency power. However, with the increase of the application frequency band, the size of the device is continuously reduced, and the reduction of the device size, especially the reduction of the gate length, may generate a short channel effect, which seriously affects the reliability of the device.
At present, a Fin-HEMT device becomes one of measures for solving the short channel effect, but the short channel effect still exists in the case of AlGaN/GaN heterojunction devices with smaller-sized gate lengths, particularly gate lengths below 60nm, and the development of GaN-based devices towards higher frequency fields is limited.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a ring-gate full-control AlGaN/GaN millimeter wave HEMT device and a preparation method thereof. The technical problem to be solved by the invention is realized by the following technical scheme:
the invention provides a ring-gate full-control AlGaN/GaN millimeter wave HEMT device, which comprises:
a substrate;
a source region portion disposed on one side on the substrate;
a drain region portion disposed on the other side on the substrate and disposed opposite to the source region portion;
the nano channels are arranged between the source region part and the drain region part at intervals and are arranged above the substrate in a suspending way;
a source electrode disposed on the source region part;
a drain electrode disposed on the drain region portion;
and the gate electrode is positioned between the source electrode and the drain electrode and is coated on the periphery of the nano channel.
In one embodiment of the present invention, each of the source region portion and the drain region portion includes an NbN layer, a GaN channel layer, and an AlGaN barrier layer, which are sequentially stacked from bottom to top.
In one embodiment of the present invention, the nanochannel includes the GaN channel layer and the AlGaN barrier layer stacked in this order from bottom to top.
In one embodiment of the invention, the substrate comprises a substrate base sheet, an AlN nucleating layer and a GaN buffer layer which are sequentially stacked from bottom to top, wherein the substrate base sheet is a Si substrate, a sapphire substrate or a SiC substrate.
In one embodiment of the invention, the thickness of the NbN layer is 20-100nm, the thickness of the GaN channel layer is 20-100nm, the thickness of the AlGaN barrier layer is 10-30nm, and the composition of Al is 15% -35%.
In one embodiment of the present invention, the width of the nanochannel is in the range of 50-300 nm.
The invention provides a preparation method of a ring-gate full-control AlGaN/GaN millimeter wave HEMT device, which comprises the following steps:
s1: selecting a substrate, and growing an AlN nucleating layer, a GaN buffer layer, an NbN layer, a GaN channel layer and an AlGaN barrier layer on the substrate in sequence;
s2: preparing a source electrode and a drain electrode on the AlGaN barrier layer;
s3: etching the AlGaN barrier layer, the GaN channel layer and the NbN buffer layer between the source electrode and the drain electrode to form a plurality of channels;
s4: removing the NbN layer below the channel to form an AlGaN/GaN nanometer channel with a suspended bottom;
s5: depositing gate metal to form an annular gate electrode wrapping the periphery of the AlGaN/GaN nanometer channel;
s6: and preparing metal interconnection on the electrode.
In an embodiment of the present invention, the S3 includes:
s31: photoetching masks of the active regions except the source region part and the drain region part by using an electron beam photoetching machine;
s32: and etching a deep groove in the plasma by using an inductively coupled plasma etching machine, and etching the AlGaN barrier layer, the GaN channel layer and the NbN buffer layer between the source electrode and the drain electrode to form a plurality of channels, wherein the depth of the deep groove is 50-230nm, and the width of each channel is 50-300 nm.
In an embodiment of the present invention, the S4 includes: placing the device into an inductively coupled plasma etcher, and introducing XeF2And (3) gas, completely etching the NbN layer below the channel, and taking out the device to form the AlGaN/GaN nanometer channel with the suspended bottom.
In an embodiment of the present invention, the S5 includes: and evaporating gate metal at an evaporation rate of 0.1nm/s by adopting an electron beam evaporation table, sequentially selecting Ni/Au as the gate metal, and stripping the metal after evaporation to form an annular gate electrode coated on the periphery of the AlGaN/GaN nano channel.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device, the ring-gate structure with the surrounding envelope is adopted, so that the gate electrode control force of the AlGaN/GaN device is improved, the short channel effect caused by the small gate length of a radio frequency device is reduced, and the reliability of the device is improved;
2. the invention relates to a preparation method of a ring-gate full-control AlGaN/GaN millimeter wave HEMT device, which adopts NbN as a sacrificial layer and XeF2The NbN layer below the channel is removed through reaction with the AlGaN/GaN nano channel, and the AlGaN/GaN nano channel with the suspended bottom is formed.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.
Drawings
Fig. 1 is a three-dimensional structure diagram of a ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device according to an embodiment of the present invention;
fig. 2 is a cross-sectional view of a nano-channel of another all-around-gate AlGaN/GaN millimeter wave HEMT device according to an embodiment of the present invention;
fig. 3 is a schematic diagram illustrating a method for manufacturing a ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device according to an embodiment of the present invention;
fig. 4a to fig. 4e are process diagrams of manufacturing a ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device according to an embodiment of the present invention.
Detailed Description
In order to further explain the technical means and effects of the present invention adopted to achieve the predetermined purpose, the following will explain in detail a ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device and a method for manufacturing the same according to the present invention with reference to the accompanying drawings and the detailed description.
The foregoing and other technical matters, features and effects of the present invention will be apparent from the following detailed description of the embodiments, which is to be read in connection with the accompanying drawings. The technical means and effects of the present invention adopted to achieve the predetermined purpose can be more deeply and specifically understood through the description of the specific embodiments, however, the attached drawings are provided for reference and description only and are not used for limiting the technical scheme of the present invention.
Example one
Referring to fig. 1 and fig. 2 in combination, fig. 1 is a three-dimensional structure diagram of a ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device according to an embodiment of the present invention; fig. 2 is a cross-sectional view of a nano-channel of another all-around-gate AlGaN/GaN millimeter wave HEMT device according to an embodiment of the present invention. As shown in the figure, the ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device of the present embodiment includes: a substrate 1, a source region portion 2, a drain region portion 3, a number of nano-channels 4, a source electrode 5, a drain electrode 6 and a gate electrode 7. Wherein the source region portion 2 is provided on one side on the substrate 1; a drain region portion 3 is provided on the other side on the substrate 1, and is disposed opposite to the source region portion 2; the nano channels 4 are arranged between the source region part 2 and the drain region part 3 at intervals and are arranged above the substrate 1 in a suspending way; the source electrode 5 is provided on the source region portion 2; a drain electrode 6 is provided on the drain region portion 3; the gate electrode 7 is located between the source electrode 5 and the drain electrode 6 and wraps the periphery of the nano-channel 4.
In the present embodiment, as shown in fig. 1, the ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device is provided with one nanochannel 4. The ring-gate all-control AlGaN/GaN millimeter wave HEMT device shown in FIG. 2 is provided with three nano-channels 4, and the bottoms of gate electrodes 7 are connected with each other.
Further, the source region portion 2 and the drain region portion 3 each include an NbN layer 8, a GaN channel layer 9, and an AlGaN barrier layer 10, which are stacked in this order from bottom to top. The nano-channel 4 comprises a GaN channel layer 9 and an AlGaN barrier layer 10 which are sequentially stacked from bottom to top.
In this embodiment, the GaN channel layer 9 and the AlGaN barrier layer 10 form an AlGaN/GaN heterojunction, the gate electrode 7 is in an annular structure and is wrapped around the AlGaN/GaN heterojunction, the AlGaN/GaN nanochannel 4 can be surrounded by four surfaces, the control force of the gate electrode is significantly improved, the short channel effect can be effectively reduced, and the AlGaN/GaN nanochannel structure is very suitable for a radio frequency power device with a small gate length.
Further, the substrate 1 includes a substrate base wafer 101, an AlN nucleation layer 102, and a GaN buffer layer 103, which are stacked in this order from bottom to top, wherein the substrate base wafer 101 is a Si substrate, a sapphire substrate, or a SiC substrate.
In this embodiment, the thickness of the NbN layer 8 is 20 to 100nm, the thickness of the GaN channel layer 9 is 20 to 100nm, the thickness of the AlGaN barrier layer 10 is 10 to 30nm, and the composition of Al is 15 to 35%.
In the present embodiment, the width of the nano-channel 4 is 50-300 nm.
The ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device adopts a ring-gate structure with surrounding envelope, improves the gate electrode control force of the AlGaN/GaN device, reduces the short channel effect caused by the small gate length of the radio frequency device, and improves the reliability of the device.
Example two
The embodiment provides a method for preparing a ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device, please refer to fig. 3, where fig. 3 is a schematic diagram of a method for preparing a ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device according to an embodiment of the present invention, and as shown in the drawing, the method includes:
s1: selecting a substrate, and growing an AlN nucleating layer, a GaN buffer layer, an NbN layer, a GaN channel layer and an AlGaN barrier layer on the substrate in sequence;
s2: preparing a source electrode and a drain electrode on the AlGaN barrier layer;
s3: etching the AlGaN barrier layer, the GaN channel layer and the NbN buffer layer between the source electrode and the drain electrode to form a plurality of channels;
s4: removing the NbN layer below the channel to form an AlGaN/GaN nanometer channel with a suspended bottom;
s5: depositing gate metal to form an annular gate electrode coated on the periphery of the AlGaN/GaN nano channel;
s6: and preparing metal interconnection on the electrode.
Specifically, step S3 includes:
s31: photoetching masks of the active regions except the source region part and the drain region part by using an electron beam photoetching machine;
s32: and etching a deep groove in the plasma by using an inductively coupled plasma etching machine, and etching the AlGaN barrier layer, the GaN channel layer and the NbN buffer layer between the source electrode and the drain electrode to form a plurality of channels, wherein the etching depth of the deep groove is 50-230nm, and the width of the channel is 50-300 nm.
Specifically, step S4 includes:
placing the device into an inductively coupled plasma etcher, and introducing XeF2And (3) gas, completely etching the NbN layer below the channel, and taking out the device to form the AlGaN/GaN nanometer channel with the suspended bottom.
Further, step S5 includes:
and evaporating gate metal at an evaporation rate of 0.1nm/s by adopting an electron beam evaporation table, sequentially selecting Ni/Au as the gate metal, and stripping the metal after evaporation to form an annular gate electrode coated on the periphery of the AlGaN/GaN nano channel.
Further, the following three specific examples are given to describe in detail the method for manufacturing the ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device of this embodiment. Referring to fig. 4a to fig. 4e, fig. 4a to fig. 4e are schematic views illustrating a manufacturing process of a ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device according to an embodiment of the present invention.
(1) Preparing a ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device with a nano channel width of 50 nm:
step 1: selecting a Si substrate 001, and sequentially growing an AlN nucleation layer 002, a GaN buffer layer 003, an NbN layer 004, a GaN channel layer 005 and an AlGaN barrier layer 006 on the Si substrate 001, as shown in fig. 4 a.
The thickness of the GaN buffer layer 003 is 1 μm, the thickness of the NbN layer 004 is 20nm, the thickness of the GaN channel layer 005 is 20nm, the thickness of the AlGaN barrier layer 006 is 10nm, the Al component is 15%, and the GaN channel layer 005 and the AlGaN barrier layer 006 form an AlGaN/GaN heterojunction.
Step 2: source and drain electrodes (not shown) are prepared.
a) Exposing by using a Stepper photoetching machine to form a source and drain region mask pattern;
b) preparing source and drain ohmic contact metals by adopting an electron beam evaporation table, and stripping the metals after the evaporation of the source and drain ohmic contact metals is finished;
the source metal and the drain metal are respectively selected from Ti/Al/Ni/Au in sequence, the thickness of Ti is 20nm, the thickness of Al is 120nm, the thickness of Ni is 45nm, and the thickness of Au is 55 nm;
c) n at 870 deg.C2And carrying out rapid thermal annealing for 30s in the atmosphere, and alloying the source and drain ohmic contact metals to finish the preparation of the source electrode and the drain electrode.
And step 3: and preparing the AlGaN/GaN nano channel.
a) Firstly, spin coating is carried out by a spin coater to obtain a photoresist mask; then, exposing by adopting an electron beam lithography machine to form a strip-shaped pattern;
b) the substrate with the mask is etched in Cl by an inductively coupled plasma etching machine2Deep trench junctions in plasmaEtching the AlGaN barrier layer 006, the GaN channel layer 005 and the NbN buffer layer 004 to form a channel with a width of 50nm, wherein the depth of the deep groove is 50nm, and Cl is adopted2Performing plasma etching to isolate the mesa, wherein the etching depth exceeds 100nm, as shown in FIG. 4 b;
c) putting the substrate into an inductively coupled plasma etcher, and introducing XeF2And (4) etching the NbN layer just below the channel completely by using gas to form an AlGaN/GaN nano channel with a suspended bottom, and taking out the substrate as shown in fig. 4c and 4 d.
And 4, step 4: preparing a gate electrode 007, evaporating gate metal at an evaporation rate of 0.1nm/s by using an electron beam evaporation table, and performing metal stripping after evaporation is completed to obtain the gate electrode 007, wherein the AlGaN/GaN nano-channel is completely wrapped by the gate electrode 007 as shown in FIG. 4 e.
Wherein, the gate metal is sequentially selected from Ni/Au, wherein the thickness of Ni is 20nm, and the thickness of Au is 200 nm.
And 5: passivation layers and open-hole interconnects (not shown) are prepared.
a) NH by adopting PECVD process3Is a source of N, SiH4The source is a Si source, and a SiN passivation layer with a thickness of 60nm is deposited on the uppermost AlGaN barrier layer 006;
b) in CF using an inductively coupled plasma etcher4Etching and removing the SiN layer in the electrode area in the plasma to form an interconnection opening;
c) and (3) carrying out lead electrode metal evaporation on the substrate with the mask manufactured by adopting an electron beam evaporation table at an evaporation rate of 0.3nm/s, and finally stripping after the lead electrode metal evaporation is finished to obtain the complete lead electrode. Wherein, the metal is Ti/Au, the thickness of Ti is 20nm, and the thickness of Au is 200 nm.
(2) Preparing a ring-gate all-control AlGaN/GaN millimeter wave HEMT device with the nano channel width of 175 nm:
step 1: selecting a Si substrate 001, and sequentially growing an AlN nucleation layer 002, a GaN buffer layer 003, an NbN layer 004, a GaN channel layer 005 and an AlGaN barrier layer 006 on the Si substrate 001, as shown in fig. 4 a.
The thickness of the GaN buffer layer 003 is 3 μm, the thickness of the NbN layer 004 is 60nm, the thickness of the GaN channel layer 005 is 60nm, the thickness of the AlGaN barrier layer 006 is 20nm, the Al component is 25%, and the GaN channel layer 005 and the AlGaN barrier layer 006 form an AlGaN/GaN heterojunction.
Step 2: source and drain electrodes (not shown) are prepared.
a) Exposing by using a Stepper photoetching machine to form a source and drain region mask pattern;
b) preparing source and drain ohmic contact metals by adopting an electron beam evaporation table, and stripping the metals after the evaporation of the source and drain ohmic contact metals is finished;
the source metal and the drain metal are respectively selected from Ti/Al/Ni/Au in sequence, the thickness of Ti is 20nm, the thickness of Al is 120nm, the thickness of Ni is 45nm, and the thickness of Au is 55 nm;
c) n at 870 deg.C2And carrying out rapid thermal annealing for 30s in the atmosphere, and alloying the source and drain ohmic contact metals to finish the preparation of the source electrode and the drain electrode.
And step 3: and preparing the AlGaN/GaN nano channel.
a) Firstly, spin coating is carried out by a spin coater to obtain a photoresist mask; then, exposing by adopting an electron beam lithography machine to form a strip-shaped pattern;
b) the substrate with the mask is etched in Cl by an inductively coupled plasma etching machine2Etching deep groove structure in plasma to etch AlGaN barrier layer 006, GaN channel layer 005 and NbN buffer layer 004, wherein the etching depth of the deep groove is 140nm, a channel with the width of 175nm is formed, and Cl is adopted2Carrying out mesa isolation by plasma etching, wherein the etching depth exceeds 200nm, as shown in FIG. 4 b;
c) putting the substrate into an inductively coupled plasma etcher, and introducing XeF2And (4) etching the NbN layer just below the channel completely by using gas to form an AlGaN/GaN nano channel with a suspended bottom, and taking out the substrate as shown in fig. 4c and 4 d.
And 4, step 4: preparing a gate electrode 007, evaporating gate metal at an evaporation rate of 0.1nm/s by using an electron beam evaporation table, and performing metal stripping after evaporation is completed to obtain the gate electrode 007, wherein the AlGaN/GaN nano-channel is completely wrapped by the gate electrode 007 as shown in FIG. 4 e.
Wherein, the gate metal is sequentially selected from Ni/Au, wherein the thickness of Ni is 20nm, and the thickness of Au is 200 nm.
And 5: passivation layers and open-hole interconnects (not shown) are prepared.
a) NH by adopting PECVD process3Is a source of N, SiH4The source is a Si source, and a SiN passivation layer with a thickness of 60nm is deposited on the uppermost AlGaN barrier layer 006;
b) in CF using an inductively coupled plasma etcher4Etching and removing the SiN layer in the electrode area in the plasma to form an interconnection opening;
c) and (3) carrying out lead electrode metal evaporation on the substrate with the mask manufactured by adopting an electron beam evaporation table at an evaporation rate of 0.3nm/s, and finally stripping after the lead electrode metal evaporation is finished to obtain the complete lead electrode. Wherein, the metal is Ti/Au, the thickness of Ti is 20nm, and the thickness of Au is 200 nm.
(3) Preparing a ring-gate all-control AlGaN/GaN millimeter wave HEMT device with the nano channel width of 300 nm:
step 1: selecting a Si substrate 001, and sequentially growing an AlN nucleation layer 002, a GaN buffer layer 003, an NbN layer 004, a GaN channel layer 005 and an AlGaN barrier layer 006 on the Si substrate 001, as shown in fig. 4 a.
The thickness of the GaN buffer layer 003 is 5 μm, the thickness of the NbN layer 004 is 100nm, the thickness of the GaN channel layer 005 is 100nm, the thickness of the AlGaN barrier layer 006 is 30nm, the Al component is 35%, and the GaN channel layer 005 and the AlGaN barrier layer 006 form an AlGaN/GaN heterojunction.
Step 2: source and drain electrodes (not shown) are prepared.
a) Exposing by using a Stepper photoetching machine to form a source and drain region mask pattern;
b) preparing source and drain ohmic contact metals by adopting an electron beam evaporation table, and stripping the metals after the evaporation of the source and drain ohmic contact metals is finished;
the source metal and the drain metal are respectively selected from Ti/Al/Ni/Au in sequence, the thickness of Ti is 20nm, the thickness of Al is 120nm, the thickness of Ni is 45nm, and the thickness of Au is 55 nm;
c) n at 870 deg.C2Rapid reaction for 30s in atmosphereAnd (4) performing thermal annealing, and alloying the source and drain ohmic contact metals to finish the preparation of the source electrode and the drain electrode.
And step 3: and preparing the AlGaN/GaN nano channel.
a) Firstly, spin coating is carried out by a spin coater to obtain a photoresist mask; then, exposing by adopting an electron beam lithography machine to form a strip-shaped pattern;
b) the substrate with the mask is etched in Cl by an inductively coupled plasma etching machine2Etching deep groove structure in plasma to etch AlGaN barrier layer 006, GaN channel layer 005 and NbN buffer layer 004 to form channel with width of 300nm and depth of 230nm, and adopting Cl2Carrying out mesa isolation by plasma etching, wherein the etching depth exceeds 300nm, as shown in FIG. 4 b;
c) putting the substrate into an inductively coupled plasma etcher, and introducing XeF2And (4) etching the NbN layer just below the channel completely by using gas to form an AlGaN/GaN nano channel with a suspended bottom, and taking out the substrate as shown in fig. 4c and 4 d.
And 4, step 4: preparing a gate electrode 007, evaporating gate metal at an evaporation rate of 0.1nm/s by using an electron beam evaporation table, and performing metal stripping after evaporation is completed to obtain the gate electrode 007, wherein the AlGaN/GaN nano-channel is completely wrapped by the gate electrode 007 as shown in FIG. 4 e.
Wherein, the gate metal is sequentially selected from Ni/Au, wherein the thickness of Ni is 20nm, and the thickness of Au is 200 nm.
And 5: passivation layers and open-hole interconnects (not shown) are prepared.
a) NH by adopting PECVD process3Is a source of N, SiH4The source is a Si source, and a SiN passivation layer with a thickness of 60nm is deposited on the uppermost AlGaN barrier layer 006;
b) in CF using an inductively coupled plasma etcher4Etching and removing the SiN layer in the electrode area in the plasma to form an interconnection opening;
c) and (3) carrying out lead electrode metal evaporation on the substrate with the mask manufactured by adopting an electron beam evaporation table at an evaporation rate of 0.3nm/s, and finally stripping after the lead electrode metal evaporation is finished to obtain the complete lead electrode. Wherein, the metal is Ti/Au, the thickness of Ti is 20nm, and the thickness of Au is 200 nm.
In the preparation method of the ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device of the embodiment, NbN is used as a sacrificial layer, and XeF is used2The NbN layer below the channel is removed through reaction with the AlGaN/GaN nano channel, and the AlGaN/GaN nano channel with the suspended bottom is formed.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or device that comprises a list of elements does not include only those elements but may include other elements not expressly listed. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of additional like elements in the article or device comprising the element. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The directional or positional relationships indicated by "upper", "lower", "left", "right", etc., are based on the directional or positional relationships shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. The utility model provides a ring grid full control type AlGaN/GaN millimeter wave HEMT device which characterized in that includes:
a substrate;
a source region portion disposed on one side on the substrate;
a drain region portion disposed on the other side on the substrate and disposed opposite to the source region portion;
the nano channels are arranged between the source region part and the drain region part at intervals and are arranged above the substrate in a suspending way;
a source electrode disposed on the source region part;
a drain electrode disposed on the drain region portion;
and the gate electrode is positioned between the source electrode and the drain electrode and is coated on the periphery of the nano channel.
2. The ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device according to claim 1, wherein the source region part and the drain region part respectively comprise an NbN layer, a GaN channel layer and an AlGaN barrier layer which are sequentially stacked from bottom to top.
3. The ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device according to claim 2, wherein the nanochannel comprises the GaN channel layer and the AlGaN barrier layer which are sequentially stacked from bottom to top.
4. The ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device according to claim 1, wherein the substrate comprises a substrate, an AlN nucleating layer and a GaN buffer layer which are sequentially stacked from bottom to top, wherein the substrate is a Si substrate, a sapphire substrate or a SiC substrate.
5. The ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device according to claim 2, wherein the thickness of the NbN layer is 20-100nm, the thickness of the GaN channel layer is 20-100nm, the thickness of the AlGaN barrier layer is 10-30nm, and the composition of Al is 15-35%.
6. The ring-gate fully-controlled AlGaN/GaN millimeter wave HEMT device according to claim 1, wherein the width of the nanochannel is 50-300 nm.
7. A preparation method of a ring-gate full-control AlGaN/GaN millimeter wave HEMT device is characterized by comprising the following steps:
s1: selecting a substrate, and growing an AlN nucleating layer, a GaN buffer layer, an NbN layer, a GaN channel layer and an AlGaN barrier layer on the substrate in sequence;
s2: preparing a source electrode and a drain electrode on the AlGaN barrier layer;
s3: etching the AlGaN barrier layer, the GaN channel layer and the NbN buffer layer between the source electrode and the drain electrode to form a plurality of channels;
s4: removing the NbN layer below the channel to form an AlGaN/GaN nanometer channel with a suspended bottom;
s5: depositing gate metal to form an annular gate electrode wrapping the periphery of the AlGaN/GaN nanometer channel;
s6: and preparing metal interconnection on the electrode.
8. The method according to claim 7, wherein the S3 includes:
s31: photoetching masks of the active regions except the source region part and the drain region part by using an electron beam photoetching machine;
s32: and etching a deep groove in the plasma by using an inductively coupled plasma etching machine, and etching the AlGaN barrier layer, the GaN channel layer and the NbN buffer layer between the source electrode and the drain electrode to form a plurality of channels, wherein the depth of the deep groove is 50-230nm, and the width of each channel is 50-300 nm.
9. The method according to claim 7, wherein the S4 includes: placing the device into an inductively coupled plasma etcher, and introducing XeF2Gas, completely etching the NbN layer below the channel, and taking the deviceAnd forming the AlGaN/GaN nano channel with the suspended bottom.
10. The method according to claim 7, wherein the S5 includes: and evaporating gate metal at an evaporation rate of 0.1nm/s by adopting an electron beam evaporation table, sequentially selecting Ni/Au as the gate metal, and stripping the metal after evaporation to form an annular gate electrode coated on the periphery of the AlGaN/GaN nano channel.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150021624A1 (en) * | 2013-07-16 | 2015-01-22 | David J. Meyer | Lift-off of epitaxial layers from silicon carbide or compound semiconductor substrates |
| US20150255590A1 (en) * | 2014-01-30 | 2015-09-10 | Infineon Technologies Austria Ag | Group III-Nitride-Based Enhancement Mode Transistor Having a Heterojunction Fin Structure |
| US20160304340A1 (en) * | 2015-04-16 | 2016-10-20 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Method for Fabricating Suspended MEMS Structures |
| CN107919397A (en) * | 2017-11-20 | 2018-04-17 | 西安电子科技大学 | A kind of High Linear FET device and preparation method thereof |
| KR20190028260A (en) * | 2017-09-08 | 2019-03-18 | 한국전자통신연구원 | Gate-all-around device and method for fabricating the same |
| CN110010682A (en) * | 2019-03-22 | 2019-07-12 | 华南理工大学 | GaN-HEMT device with sandwich structure and preparation method thereof |
-
2021
- 2021-01-21 CN CN202110084428.9A patent/CN112838121B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150021624A1 (en) * | 2013-07-16 | 2015-01-22 | David J. Meyer | Lift-off of epitaxial layers from silicon carbide or compound semiconductor substrates |
| US20150255590A1 (en) * | 2014-01-30 | 2015-09-10 | Infineon Technologies Austria Ag | Group III-Nitride-Based Enhancement Mode Transistor Having a Heterojunction Fin Structure |
| US20160304340A1 (en) * | 2015-04-16 | 2016-10-20 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Method for Fabricating Suspended MEMS Structures |
| KR20190028260A (en) * | 2017-09-08 | 2019-03-18 | 한국전자통신연구원 | Gate-all-around device and method for fabricating the same |
| CN107919397A (en) * | 2017-11-20 | 2018-04-17 | 西安电子科技大学 | A kind of High Linear FET device and preparation method thereof |
| CN110010682A (en) * | 2019-03-22 | 2019-07-12 | 华南理工大学 | GaN-HEMT device with sandwich structure and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| KI-SIK IM ET AL: "Current Collapse-Free and Self-Heating Performances in Normally off GaN Nanowire GAA-MOSFETs", 《JOURNAL OF ELECTRON DEVICES SOCIETY》 * |
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