CN112834053A - Flexible broadband uncooled infrared detector and preparation method thereof - Google Patents
Flexible broadband uncooled infrared detector and preparation method thereof Download PDFInfo
- Publication number
- CN112834053A CN112834053A CN202110100806.8A CN202110100806A CN112834053A CN 112834053 A CN112834053 A CN 112834053A CN 202110100806 A CN202110100806 A CN 202110100806A CN 112834053 A CN112834053 A CN 112834053A
- Authority
- CN
- China
- Prior art keywords
- manganese
- nickel
- cobalt
- thermistor film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 51
- 230000008569 process Effects 0.000 claims abstract description 27
- YQOXCVSNNFQMLM-UHFFFAOYSA-N [Mn].[Ni]=O.[Co] Chemical compound [Mn].[Ni]=O.[Co] YQOXCVSNNFQMLM-UHFFFAOYSA-N 0.000 claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 238000001514 detection method Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 38
- 238000001259 photo etching Methods 0.000 claims description 20
- 239000011780 sodium chloride Substances 0.000 claims description 19
- 239000004642 Polyimide Substances 0.000 claims description 18
- 229920001721 polyimide Polymers 0.000 claims description 18
- 230000008093 supporting effect Effects 0.000 claims description 18
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 13
- 229910052804 chromium Inorganic materials 0.000 claims description 13
- 239000011651 chromium Substances 0.000 claims description 13
- 239000002131 composite material Substances 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 8
- 238000011161 development Methods 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 238000002207 thermal evaporation Methods 0.000 claims description 5
- 238000013461 design Methods 0.000 claims description 4
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000004044 response Effects 0.000 abstract description 12
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000012546 transfer Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 33
- 239000000463 material Substances 0.000 description 13
- 230000005855 radiation Effects 0.000 description 8
- 238000005057 refrigeration Methods 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910018553 Ni—O Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
- G01J2005/204—Arrays prepared by semiconductor processing, e.g. VLSI
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/206—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices on foils
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Thermistors And Varistors (AREA)
Abstract
The invention discloses a flexible broadband uncooled infrared detector and a preparation method thereof. The device adopts a silicon wafer as a substrate, a water-soluble sacrificial layer grows on the silicon wafer, and finally the hard silicon wafer substrate is removed through a stripping process of dissolving the sacrificial layer in water, and the stripped silicon wafer can be reused and has low preparation cost. The device is a self-supporting structure, has small heat capacity and is beneficial to improving the response speed of the device. The device selects the manganese-cobalt-nickel-oxygen thermistor film with broadband response characteristics as an infrared absorption layer, does not contain the traditional micro-bridge preparation process, does not form a resonant cavity structure with a narrow response waveband, is simple in process and easy to operate, and can realize broadband detection. The device has good flexibility, light weight and high shockproof performance, is easy to transfer to a flexible reading circuit, and is applied to intelligent electronic systems such as flexible wearable sensing systems. The device and the preparation method thereof have mature process, are compatible with the standard silicon integrated circuit process, and are suitable for unit, line and area array infrared detectors.
Description
Technical Field
The invention relates to an infrared detector, in particular to a flexible broadband thermistor film type non-refrigeration infrared detector and a preparation method thereof.
Background
Any object higher than absolute zero (-273.13 deg.C) in nature radiates infrared signal outwards, and the infrared detector is a device for converting infrared radiation signal into electric signal and outputting it, and has wide application in civil and military fields, such as infrared thermal imaging, meteorological remote sensing, fire prevention alarm, non-contact temperature measurement, medical diagnosis, missile early warning and interception.
Infrared detectors are generally classified into two major types, a refrigeration type and a non-refrigeration type. The photon detector represented by the traditional narrow bandgap semiconductor such as mercury cadmium telluride needs a complex refrigerating device to obtain high-performance response of the device, and the wide popularization and application of the detector are limited due to high cost. The non-refrigeration type infrared detector does not need a complex refrigeration system, can work at room temperature, has lower detection performance than the refrigeration type detector, can meet most civil and military applications, particularly has the advantage of low cost, occupies most shares of the current infrared detector market, and is a development trend for further large-scale popularization and application of the infrared detector in the future. The thermistor type infrared detector is an important uncooled infrared detector, and the basic principle is that the infrared radiation is detected by measuring the change of a thermistor material resistance caused by the infrared radiation of a target. The Temperature Coefficient of Resistance (TCR) of the thermistor material and the structure of the device are two major factors that determine the performance of the detector.
Compared with metal heat-sensitive material, the semiconductor heat-sensitive material has higher TCR absolute value and is the first choice for developing non-refrigeration infrared detectors, wherein Vanadium Oxide (VO)x) Amorphous silicon (a-Si), etc. are commonly used thermistor materials. Albeit based on VOxUncooled infrared detectors of conventional thermistor semiconductor materials such as a-Si have been commercially used, but the TCR absolute values of these materials are relatively low at room temperature, e.g., VO at room temperaturexAnd a-Si are both about-2%/K, limiting the improvement in detection performance. Therefore, there is a need to further develop a novel thermosensitive material having a high TCR absolute value. In addition, the conventional thermal detector usually adopts a microbridge resonant cavity structure, and the height of the microbridge is usually designed to be 1/4 wavelengths, so that the response band is narrow, for example, for room-temperature object detection (e.g. 300K, corresponding to a radiation peak wavelength of-10 μm), the height of the microbridge needs to be designed to be about 2.5 μm, and the corresponding response band of the detector is about 8-14 μm.The use of the microbridge structure increases the complexity of the device process, in order to form the microbridge, a sacrificial layer, a supporting layer and a passivation layer need to be additionally prepared, an additional etching process is needed, if the height is high, the difficulty is increased, the risk of collapse of the bridge deck exists, the yield is reduced, and further the preparation cost is increased. In addition, as mentioned above, the microbridge resonator has wavelength selectivity and can only respond to a relatively narrow band, and the actual target has infrared radiation in the full band (e.g. 1-50 μm), so the use of the microbridge resonator structure can also cause a loss of many useful target infrared radiation information to some extent.
With the development of information technology, flexible electronic components with sensing functions are the development requirements of future intelligent life, and the emergence of flexible electronics provides a new direction for the development of classical electronics, triggers the generation of new-form electronic equipment, and also leads people to revolutionary change in daily life. For example, the foldable, rollable and flexible display can change the existing presentation forms of pictures and movies, so that consumer electronic products such as mobile phones, televisions and the like have more novel and light forms. For the field of infrared sensing, the current infrared detector is mainly processed on a hard substrate based on semiconductor thermosensitive or photosensitive materials, the structure is rigid and heavy, the shape is fixed and unchanged, and the application in intelligent electronic systems such as flexible wearable sensing is limited.
Disclosure of Invention
Based on the problems in the prior art, the invention aims to provide a novel flexible thermistor film type uncooled infrared detector with wide-band response characteristics and a preparation method thereof.
Manganese-cobalt-nickel-oxide (Mn-Co-Ni-O, MCN) transition metal oxide is a novel thermistor semiconductor material. Through experimental research, the TCR of the MCN film at room temperature is about-3% -4%/K, which is superior to the traditional VOxAnd a-Si, etc., -2%/K. Meanwhile, high polarizability exists among transition metals of manganese, cobalt, nickel and oxides which form the MCN material, and strong coupling can be generated between the transition metals and external electromagnetic waves, so that the MCN material has very wide spectral responseShould be (0.2 to 50 μm) and high infrared radiation absorbing ability [ see document 1]. These experimental studies indicate that based on the performance advantages of MCN materials, uncooled infrared detection of broad bands can be achieved without using traditional microbridge structures that result in devices with narrower response bands. The magnetron sputtering method has been adopted in our laboratory [ see document 2]]The high-quality MCN film is prepared at room temperature, and the flexible organic polymer material is not damaged in the low-temperature growth process. In addition, there are documents [ see document 3]It is reported that a lift-off process (lift-off) can be used to prepare flexible photoelectric devices, such as flexible solar cells, by first growing a water-soluble sodium chloride film on a hard substrate such as glass, then growing a flexible solar cell structure thereon, and finally removing the sodium chloride film by dissolving in water.
Therefore, the technical scheme of the invention is provided: the MCN thermistor film is used as an infrared absorption layer, and the preparation of the high-performance flexible broadband uncooled infrared detector is realized through a stripping process.
The documents referred to above are as follows:
1.Z.Huang,W.Zhou,C.Ouyang,J.Wu,F.Zhang,J.Huang,Y.Gao and J.Chu,High performance of Mn-Co-Ni-O spinel nanofilms sputtered from acetate precursors.Sci.Rep.5(2015)10899；
2.J.Wu,Z.Huang,L.Jiang,Y.Gao,W.Zhou,and J.Chu,Flexible thermistors MCNO films with low resistivity and high TCR deposited on flexible organic sheets by RF magnetron sputtering,Proc.SPIE 10403(2017)104030C；
3.X.Mathew,J.P.Enriquez,A.Romeo and A.N.Tiwari,CdTe/CdS solar cells on flexible substrates,Solar Energy 77(2004)831；
the structure diagram of the flexible broadband uncooled infrared detector is shown in fig. 1 and fig. 2, and comprises a supporting layer 1, a thermistor film 2 and a metal electrode 3, and is characterized in that:
the infrared detector is provided with a thermistor film 2 and a metal electrode 3 in sequence from the supporting layer 1;
the metal electrodes 3 are positioned at two ends of the thermistor film 2;
the supporting layer 1 is a polyimide supporting layer, and the thickness is 1-2 μm;
the thermistor film 2 is a manganese cobalt nickel oxygen thermistor film with the thickness of 6-9 μm;
the metal electrode 3 is a chromium and gold composite electrode, and the thicknesses of the metal electrode are respectively 30nm and 150 nm.
The flow schematic diagram of the preparation method of the flexible broadband uncooled infrared detector is shown in fig. 3A-3F, and the steps are as follows:
1 preparing a sacrificial layer on a hard substrate, wherein the thickness is 500-;
the hard substrate is a silicon substrate.
The sacrificial layer is a sodium chloride sacrificial layer.
The preparation method adopted is a thermal evaporation method.
The sodium chloride is a water-soluble substance, and after all device processes are finished, the flexible detection device is realized through a stripping process of dissolving in water.
2 preparing a polyimide support layer with a thickness of 1-2 μm on a sodium chloride sacrificial layer;
the preparation method adopted is a solution spin coating method.
The polyimide has a flexible supporting effect on the thermistor film, and has a heat insulation effect on the other hand, so that the heat conduction of the device is reduced, and the response rate of the device is improved.
3 preparing a manganese cobalt nickel oxygen thermistor film on the polyimide support layer, with a thickness of 6-9 μm;
the preparation method adopted is a magnetron sputtering method [ see document 2 ].
4, preparing the manganese-cobalt-nickel-oxygen thermistor film into discrete manganese-cobalt-nickel-oxygen film detection elements through photoetching processes such as photoetching, corrosion, developing treatment and the like, wherein the areas of the detection elements are determined according to the design requirements of devices;
5, preparing chromium and gold composite electrodes at two ends of the manganese-cobalt-nickel-oxygen thin film detection element by photoetching, corrosion, development treatment and other photoetching graphic processes by adopting a certain preparation method, wherein the thicknesses are respectively 30nm and 150nm, and the areas of the electrodes are determined according to the design requirements of devices;
the preparation method is a magnetron sputtering method or a dual-ion beam sputtering method.
The chromium and gold composite electrode is used for forming ohmic contact with the manganese-cobalt-nickel-oxygen thermistor film.
6 removing the silicon substrate by a lift-off process that dissolves the sacrificial layer of sodium chloride in deionized water;
the chromium and gold composite electrode is connected with a reading circuit to output signals, so that the flexible broadband infrared detection function is realized.
The most remarkable advantages of the invention are:
1. the device does not contain a traditional micro-bridge structure, on one hand, the steps related to the preparation of the micro-bridge structure are reduced, and the process flow is simplified; on the other hand, a resonant cavity structure with a narrow response wave band is not formed, broadband response can be realized, and more complete target infrared thermal radiation information can be obtained.
2. The device is a self-supporting structure, has small heat capacity and is beneficial to improving the response speed of the device.
3. In the preparation process, the silicon wafer is used as the hard substrate, so that the silicon wafer is easy to be compatible with the modern silicon-based microelectronic processing technology, and the stripped silicon wafer can be reused, so that the preparation cost is reduced.
4. The device has good flexibility, light weight and high shockproof performance, is suitable for unit, linear array and area array infrared detectors, is easy to transfer to a flexible reading circuit, and is applied to intelligent electronic systems such as flexible wearable sensing systems.
Drawings
Fig. 1 is a structural section view of the flexible broadband uncooled infrared detector of the present invention.
Fig. 2 is a structural top view of the flexible broadband uncooled infrared detector of the present invention.
Fig. 3A to 3F are schematic diagrams illustrating steps of a method for manufacturing a flexible broadband uncooled infrared detector according to the present invention.
Reference numbers in the figures: 1 is a supporting layer, 2 is a thermistor film, 3 is a metal electrode, 4 is a sacrificial layer, and 5 is a hard substrate.
Detailed Description
The following detailed description of embodiments of the invention is provided in connection with the accompanying drawings and examples:
example 1:
1. a sacrificial layer of sodium chloride with the thickness of 500nm is prepared on a silicon chip by adopting a thermal evaporation method.
2. A polyimide support layer is prepared on the sodium chloride sacrificial layer by adopting a solution spin coating method, and the thickness of the polyimide support layer is 1 mu m.
3. The manganese-cobalt-nickel-oxygen thermistor film is prepared on the polyimide supporting layer by adopting a magnetron sputtering method, and the thickness of the manganese-cobalt-nickel-oxygen thermistor film is 6 mu m.
4. Discrete manganese cobalt nickel oxygen film detecting elements are prepared on the manganese cobalt nickel oxygen thermistor film through photoetching processes such as photoetching, corrosion, developing treatment and the like, and the area of each detecting element is 30 micrometers multiplied by 30 micrometers.
5. By photoetching, etching, developing and other photoetching pattern processes, a double-ion-beam sputtering method is adopted to prepare chromium and gold composite electrodes at two ends of the manganese-cobalt-nickel-oxygen film detection element, the thicknesses of the chromium and gold composite electrodes are respectively 30nm and 150nm, and the area of each electrode is 30 micrometers multiplied by 10 micrometers.
6. And removing the silicon wafer by a stripping process of dissolving the sodium chloride sacrificial layer in deionized water.
Example 2:
1. a sacrificial layer of sodium chloride with the thickness of 700nm is prepared on a silicon chip by adopting a thermal evaporation method.
2. A polyimide support layer is prepared on the sodium chloride sacrificial layer by adopting a solution spin coating method, and the thickness of the polyimide support layer is 1.5 mu m.
3. The Mn-Co-Ni-O thermistor film is prepared on the polyimide supporting layer by adopting a magnetron sputtering method, and the thickness of the Mn-Co-Ni-O thermistor film is 8 mu m.
4. Discrete manganese cobalt nickel oxygen film detecting elements are prepared on the manganese cobalt nickel oxygen thermistor film through photoetching processes such as photoetching, corrosion, developing treatment and the like, and the area of each detecting element is 50 micrometers multiplied by 50 micrometers.
5. By photoetching, etching, developing and other photoetching pattern processes, a double-ion-beam sputtering method is adopted to prepare chromium and gold composite electrodes at two ends of the manganese-cobalt-nickel-oxygen film detection element, the thicknesses of the chromium and gold composite electrodes are respectively 30nm and 150nm, and the area of each electrode is 50 micrometers multiplied by 15 micrometers.
6. And removing the silicon wafer by a stripping process of dissolving the sodium chloride sacrificial layer in deionized water.
Example 3:
1. a sacrificial layer of sodium chloride is prepared on a silicon chip by adopting a thermal evaporation method, and the thickness of the sacrificial layer is 800 nm.
2. A polyimide support layer is prepared on the sodium chloride sacrificial layer by adopting a solution spin coating method, and the thickness of the polyimide support layer is 2 mu m.
3. The manganese-cobalt-nickel-oxygen thermistor film is prepared on the polyimide supporting layer by adopting a magnetron sputtering method, and the thickness of the film is 9 mu m.
4. Discrete manganese cobalt nickel oxygen film detecting elements are prepared on the manganese cobalt nickel oxygen thermistor film through photoetching processes such as photoetching, corrosion, developing treatment and the like, and the area of each detecting element is 75 micrometers multiplied by 75 micrometers.
5. By photoetching, corrosion, development and other photoetching pattern processes, the magnetron sputtering method is adopted to prepare chromium and gold composite electrodes at two ends of the manganese-cobalt-nickel-oxygen film detection element, the thicknesses of the chromium and gold composite electrodes are respectively 30nm and 150nm, and the areas of the electrodes are 75 micrometers multiplied by 20 micrometers.
6. And removing the silicon wafer by a stripping process of dissolving the sodium chloride sacrificial layer in deionized water.
Claims (2)
1. The utility model provides a flexible broadband uncooled infrared detector, includes supporting layer (1), thermistor film (2) and metal electrode (3), its characterized in that:
the infrared detector is characterized in that a thermistor film (2) and a metal electrode (3) are sequentially arranged on the supporting layer (1);
the metal electrodes (3) are positioned at two ends of the thermistor film (2);
the supporting layer (1) is a polyimide supporting layer, and the thickness of the polyimide supporting layer is 1-2 mu m;
the thermistor film (2) is a manganese-cobalt-nickel-oxygen thermistor film, and the thickness of the thermistor film is 6-9 mu m;
the metal electrode (3) is a chromium and gold composite electrode, and the thicknesses of the metal electrode and the metal electrode are respectively 30nm and 150 nm.
2. A method of making a flexible broadband uncooled infrared detector of claim 1, comprising the steps of:
1) preparing a sodium chloride sacrificial layer on a silicon chip by adopting a thermal evaporation method, wherein the thickness of the sodium chloride sacrificial layer is 500-800 nm;
2) preparing a polyimide supporting layer on the sodium chloride sacrificial layer by adopting a solution spin-coating method, wherein the thickness of the polyimide supporting layer is 1-2 mu m;
3) preparing a manganese-cobalt-nickel-oxygen thermistor film on a polyimide supporting layer by adopting a magnetron sputtering method, wherein the thickness of the manganese-cobalt-nickel-oxygen thermistor film is 6-9 mu m;
4) preparing the manganese-cobalt-nickel-oxygen thermistor film into discrete manganese-cobalt-nickel-oxygen film detection elements by photoetching processes such as photoetching, corrosion, developing treatment and the like, wherein the areas of the detection elements are determined according to the design requirements of devices;
5) preparing chromium and gold composite electrodes at two ends of the manganese-cobalt-nickel-oxygen film detection element by photoetching, corrosion, development treatment and other photoetching graphic processes by adopting a magnetron sputtering method or a dual-ion beam sputtering method, wherein the thicknesses of the chromium and gold composite electrodes are respectively 30nm and 150nm, and the areas of the electrodes are determined according to the design requirements of devices;
6) the silicon substrate is removed by a lift-off process in which a sacrificial layer of sodium chloride is dissolved in deionized water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110100806.8A CN112834053A (en) | 2021-01-26 | 2021-01-26 | Flexible broadband uncooled infrared detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110100806.8A CN112834053A (en) | 2021-01-26 | 2021-01-26 | Flexible broadband uncooled infrared detector and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112834053A true CN112834053A (en) | 2021-05-25 |
Family
ID=75931616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110100806.8A Pending CN112834053A (en) | 2021-01-26 | 2021-01-26 | Flexible broadband uncooled infrared detector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112834053A (en) |
-
2021
- 2021-01-26 CN CN202110100806.8A patent/CN112834053A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103715307B (en) | A kind of non-refrigerated infrared detector and preparation method thereof | |
| US7541582B2 (en) | Method for production of a device for thermal detection of radiation comprising an active microbolometer and a passive microbolometer | |
| CN103708406B (en) | It is a kind of can insulation package stress resonant mode infrared detector structure and production method | |
| EP1045232B1 (en) | Infrared sensor and method of manufacturing the same | |
| CN109269662B (en) | Rare earth nickel-based perovskite oxide thermistor material applied to infrared detection | |
| CN106784165B (en) | A kind of novel double-layer non-refrigerated infrared focal plane probe dot structure and preparation method thereof | |
| EP3522217B1 (en) | Method to prepare pixel for uncooled infrared focal plane detector | |
| CN102509728A (en) | Design and preparation method of non-refrigeration infrared detector | |
| CN104465850A (en) | Pyroelectric infrared detector based on graphene absorbing layer and manufacturing method of pyroelectric infrared detector based on graphene absorbing layer | |
| CN107150995A (en) | A kind of polarization sensitive non-refrigerated infrared detector and preparation method thereof | |
| CN110617882B (en) | Temperature-sensing terahertz detector based on phase-change material and preparation method | |
| CN103852171B (en) | A kind of non-brake method Long Wave Infrared Probe absorbent layer structure | |
| CN110793648A (en) | Aerogel heat insulation structure broadband infrared detector and preparation method thereof | |
| CN112834052A (en) | Non-refrigeration infrared detector with selectable response wave band and preparation method thereof | |
| CN113340436B (en) | Uncooled CMOS infrared detector | |
| Smith et al. | Linear bolometer array using a high TCR VOx-Au film | |
| CN214334040U (en) | Flexible broadband uncooled infrared detector | |
| CN112834053A (en) | Flexible broadband uncooled infrared detector and preparation method thereof | |
| Wu et al. | One-step rolling fabrication of VO2 tubular bolometers with polarization-sensitive and omnidirectional detection | |
| CN103855238A (en) | Back-incidence immersed thermosensitive film type infrared detector | |
| CN106800271B (en) | A kind of non-refrigerated infrared focal plane probe dot structure and preparation method thereof | |
| Uchida et al. | High DC sensitivity of VOx bolometer thin films on Si3N4/SiO2 membranes fabricated by metal–organic decomposition | |
| CN110926604A (en) | Photo-thermal detection unit based on chromium-niobium co-doped vanadium dioxide epitaxial film | |
| CN210862939U (en) | Aerogel insulation construction broadband infrared detector | |
| CN110137299A (en) | A kind of enhanced Infrared Thin Films detector and preparation method based on silicon dielectric structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |