CN103855238A - Back-incidence immersed thermosensitive film type infrared detector - Google Patents
Back-incidence immersed thermosensitive film type infrared detector Download PDFInfo
- Publication number
- CN103855238A CN103855238A CN201410020924.8A CN201410020924A CN103855238A CN 103855238 A CN103855238 A CN 103855238A CN 201410020924 A CN201410020924 A CN 201410020924A CN 103855238 A CN103855238 A CN 103855238A
- Authority
- CN
- China
- Prior art keywords
- film type
- immersed
- infrared detector
- type infrared
- thermosensitive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 18
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000007654 immersion Methods 0.000 claims description 8
- QLNFINLXAKOTJB-UHFFFAOYSA-N [As].[Se] Chemical compound [As].[Se] QLNFINLXAKOTJB-UHFFFAOYSA-N 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 abstract description 4
- 238000011161 development Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000005057 refrigeration Methods 0.000 abstract description 2
- 238000012769 bulk production Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 26
- 239000011572 manganese Substances 0.000 description 12
- 230000004043 responsiveness Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- YQOXCVSNNFQMLM-UHFFFAOYSA-N [Mn].[Ni]=O.[Co] Chemical compound [Mn].[Ni]=O.[Co] YQOXCVSNNFQMLM-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- PQLVXDKIJBQVDF-UHFFFAOYSA-N acetic acid;hydrate Chemical compound O.CC(O)=O PQLVXDKIJBQVDF-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- -1 argon ion Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 238000002386 leaching Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- ZBYYWKJVSFHYJL-UHFFFAOYSA-L cobalt(2+);diacetate;tetrahydrate Chemical compound O.O.O.O.[Co+2].CC([O-])=O.CC([O-])=O ZBYYWKJVSFHYJL-UHFFFAOYSA-L 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0878—Diffusers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a back-incidence immersed thermosensitive film type infrared detector. A germanium single crystal hemispherical lens capable of collecting infrared signals is integrated on the reverse side of a substrate of the infrared detector, and a sensitive element of the detector and a compensation element of the detector are located on the condensing-center focus point position of the germanium single crystal hemispherical lens and the edge of the germanium single crystal hemispherical lens respectively, wherein the compensation element plays a role in compensation. The back-incidence immersed thermosensitive film type infrared detector has the advantages that the influence of equivalent heat capacity and signal crosstalk caused by the substrate effect of thermal devices on the responsibility of the thermosensitive film type infrared detector is reduced; by adopting the light collecting effect of the germanium single crystal hemispherical lens, immersed detection is achieved in the mode of transmitting incident light from the reverse side of the film substrate to the sensitive element, and the responsibility and detection rate of the thermosensitive film type infrared detector are substantially improved; the back-incidence immersed thermosensitive film type infrared detector plays a certain role in guiding high-performance non-refrigeration thermosensitive film type infrared detector development and can be used for bulk production of unit immersed infrared detectors.
Description
Technical field
The present invention relates to Infrared Detectors, be specifically related to a kind of back of the body incident immersion thermosensitive film type Infrared Detectors.
Background technology
Non-refrigeration thermosensitive type Infrared Detectors is a kind of important Infrared Detectors, compare photon type Infrared Detectors have preparation cost cheap, without the advantage such as low-temperature cooling system, wide-band response, broad application temperature range, device package be simple, have a wide range of applications in the field such as military, civilian and industrial, for example, can be used for temperature sensor, infrared thermal imaging, fireproof alarming, non-contact temperature measuring, night vision detection, security protection detection, environmental monitoring, guided missile tracking and all many-sides such as interception, medical diagnosis.Thermosensitive type Infrared Detectors is the thermal effect of utilizing infrared radiation, surveys infrared radiation by heat and the conversion of other physical quantitys.The feature of thermal sensitive effect is that the lattice of incident light and material interacts, and makes material temperature increase, thereby causes the physics relevant with temperature, and chemistry or electricity parameter change, such as resistance value, spontaneous polarization strength, thermoelectromotive force etc.Wherein, be most widely used with thermosensitive resistance type Infrared Detectors, it compares pyroelectricity and two kinds of temperature-sensitive Infrared Detectorss of thermocouple are more easily prepared, and with low cost, and performance is also more stable.
In the past, people mainly concentrate on body material the research of temperature-sensitive Infrared Detectors.Body material, because of the impact of the defects such as intercrystalline incomplete contact and cavity, cause repeatability, the less stable of device, and there is the unfavorable factors such as thermal capacitance is large, response speed is slow in device.In recent years, along with developing rapidly of thin film technique and microelectronic processing technology, the research of device was transferred on film-type material gradually.Thin-film material is even because of it, densification, and prepared response device speed is fast, reliability and stability are high, reproducible.Under the demand of current electronic equipment lightweight, slimming, miniaturization, the temperature-sensitive Infrared Detectors of high-performance, high stable more and more comes into one's own.
But general thermosensitive film type Infrared Detectors ubiquity sensitivity is low, time constant is large, have the problems such as certain signal cross-talk, response device rate and detectivity are not high between responsive unit and compensation.This patent is by the position of the responsive unit of appropriate design device, make to be deposited on sensitivity unit's film and first two corner positions that are distributed in substrate of compensation on substrate, reduce by the substrate equivalent thermal capacitance causing of conducting heat, eliminate the impact of signal cross-talk between responsive unit and compensation unit, the response time of having reduced device; Simultaneously, adopt the germanium single crystal packaged lens that can assemble infrared signal, to (see Chinese invention patent: the thermo-responsive film of manganese cobalt nickel oxygen of 200610030144.7) preparing is bonded in the optically focused center of germainium lens, has made higher responsiveness and (has been greater than 10 based on chemical solution method
3v/W), detectivity is (higher than 5 × 10
8cmHz
0.5/ W) and the unit back of the body incident immersion thermosensitive film type Infrared Detectors of less time constant (being less than 10 milliseconds).
Summary of the invention
The object of the invention is to propose a kind of back of the body incident immersion thermosensitive film type Infrared Detectors.The design of this patent has broken through the responsiveness of conventional thin membranous type device and the limit of detectivity, efficiently solves in film-type device that thermal capacitance is large, time constant is large, responsiveness and the problem such as detectivity is not high.
A kind of that carry on the back incident immersion thermosensitive film type Infrared Detectors and side view vertical view as illustrated in fig. 1 and 2, is characterized in that on the described thermo-responsive film-substrate back side integrated one can assemble the germanium single crystal packaged lens 4 of infrared signal.
Described germanium single crystal packaged lens 4 is shaped with the germanium hemisphere crystal of anti-reflecting layer for refractive index n=4, resistivity are greater than 30 Ω cm, plated surface, be coated with as dielectric layer and Infrared Detectors carry out bonding selenium arsenic compound film in its bottom surface.
The designed panel detector structure of this patent is realized by following concrete processing step:
1) prepare thermosensitive film.Adopting chemical solution method on amorphous nickel/phosphorus/aluminium oxide substrate, to prepare thickness is 6-8 micron manganese cobalt nickel oxygen film.
2) etch mask.At manganese cobalt nickel oxygen film surface photolithography patterning, the sensitivity unit of device and compensation unit are produced on two corner positions that the length of side is the rectangular substrate of 5 millimeters by rear employing argon ion/HBr wet-etching technology, and area is 0.01mm
2-0.25mm
2.Floating glue cleans.
3) be coated with chromium/gold electrode.At manganese cobalt nickel oxygen film surface photolithography patterning, the chromium of rear employing ion beam sputtering process deposit 50 nanometers and the gold of 200 nanometers are as electrode.Floating glue cleans.
4) scribing.Mode by mechanical scribing is cut along responsive unit detector with two sidelines of compensation unit, substrate breadth length ratio is 1:1, and width is 5 millimeters.
5) detector is adhered on immersion lens.Select selenium arsenic compound film (adhesive) as dielectric layer, under 150 degrees Celsius, make selenium arsenic compound film softening, exert pressure the detector back side is adhered in germanium single crystal packaged lens, make sensitivity unit and the compensation unit of detector lay respectively at germainium lens optically focused gonglion position and fringe region, and put into drying box and at room temperature carry out 24 hours solidifying.
6) transition electrode spot welding.Use ultrasonic gold wire bonder (model is HKD-2320TS), utilize 20 microns of spun golds that the electrode of detector is connected with the transition electrode in germanium single crystal packaged lens.
7) wire bonds and device package.The positive and negative offset side that transition electrode is drawn and the contact conductor of signal end are welded to respectively on three pins that base is corresponding, cover metal shell.Back of the body incident immersed detctor texture edge figure and vertical view are respectively as illustrated in fig. 1 and 2.
The advantage of this patent is: this panel detector structure has overcome that the equivalent thermal capacitance that causes because of body effect in thermosensitive film type device is large, the shortcoming of signal cross-talk; Adopt the germanium single crystal packaged lens that can assemble infrared signal simultaneously, less infrared signal has been focused in the sensitivity unit of detector, significantly improved responsiveness and the detectivity of device.Temperature-sensitive device based on this structure fabrication has been broken through the responsiveness of conventional thin membranous type device and the limit of detectivity, has higher responsiveness, detectivity, and less time constant.
Brief description of the drawings:
Fig. 1 is back of the body incident immersed detctor side view, in figure: 1, positive bias voltage 2, signal output part 3, negative bias voltage 4, germanium single crystal packaged lens 5, device compensation unit 6, the responsive unit 7 of device, device package 8, selenium arsenic film dielectric layer.
Fig. 2 is back of the body incident immersed detctor vertical view, in figure: 9, device electrode 10, transition electrode.
Fig. 3 is the variation with frequency of the responsiveness of back of the body incident immersed detctor under positive and negative 10V bias voltage and detectivity.
Embodiment:
Below in conjunction with accompanying drawing, by instantiation, this patent is described in further details, but the protection range of this patent is not limited to following instance.
Examples of implementation:
Based on Mn
1.56co
0.96ni
0.48o
4thermosensitive material film, the panel detector structure that development this patent provides.Specifically realize by following steps.
(1) Mn
1.56co
0.96ni
0.48o
4the preparation of film
1) prepare precursor solution.Be Mn to target components
1.56co
0.96ni
0.48o
4oxide, take respectively four water acetic acid manganese 91.76g, Cobalt diacetate tetrahydrate 57.39g, four water acetic acid nickel 28.66g, add the ratio of 400ml acetic acid, 100ml water that powder is dissolved according to every 100g acetate, pour in the solution splendid attire ware of negative pressure leaching machine, selecting aperture is the filter membrane of 0.45 μ m, carry out negative pressure leaching, the contamination precipitation in filtering solution, obtains Mn
1.56co
0.96ni
0.48o
4precursor solution, and it is for subsequent use to pack solution into liquid storage bottle.
2) prepare Mn
1.56co
0.96ni
0.48o
4sull.Adopting chemical solution method is that 15 millimeters, thickness are to prepare Mn on the amorphous nickel/phosphorus/aluminium oxide substrate of 100 microns in the length of side
1.56co
0.96ni
0.48o
4film, makes the film that thickness is about 6 microns.
(2) Mn
1.56co
0.96ni
0.48o
4the development of back of the body incident immersed detctor
3) etch mask.At Mn
1.56co
0.96ni
0.48o
4film surface photolithography patterning, the sensitivity unit of device and compensation unit are produced on two corner positions that the length of side is the rectangular substrate of 5 millimeters by rear employing argon ion/HBr wet-etching technology, and area is 0.09mm
2.Floating glue cleans.
4) be coated with chromium/gold electrode.At Mn
1.56co
0.96ni
0.48o
4film surface photolithography patterning, the chromium of rear employing ion beam sputtering process deposit 50 nanometers and the gold of 200 nanometers are as electrode.Floating glue cleans.
5) scribing.Mode by mechanical scribing is cut along responsive unit detector with two sidelines of compensation unit, substrate breadth length ratio is 1:1, and width is 5 millimeters.
6) detector is adhered on immersion lens.The germanium single crystal hemisphere of to select diameter be 11 millimeters be coated with selenium arsenic compound film (adhesive) is as collective optics, under 150 degrees Celsius, make selenium arsenic compound film softening, exert pressure the detector back side is adhered in germanium single crystal packaged lens, make sensitivity unit and the compensation unit of detector lay respectively at germainium lens optically focused gonglion position and fringe region, and put into drying box and at room temperature carry out 24 hours solidifying.
7) transition electrode spot welding.Use ultrasonic gold wire bonder (model is HKD-2320TS), utilize 20 microns of spun golds that the electrode of detector is connected with the transition electrode in germanium single crystal packaged lens.
(3) Mn
1.56co
0.96ni
0.48o
4the packaging and testing of detector
8) wire bonds and device package.The positive and negative offset side that transition electrode is drawn and the contact conductor of signal end are welded to respectively on three pins that base is corresponding, cover metal shell.
9) test.Adopt black matrix as the source of infrared radiation, to Mn
1.56co
0.96ni
0.48o
4back of the body incident immersed detctor is tested and is characterized.The device black matrix that positive negative bias voltage is 10V responds with frequency change result as shown in Figure 3.After tested, the thermosensitive film type Infrared Detectors based on this patent development has higher responsiveness, detectivity, and less time constant, and the Blackbody response sensitivily under normal temperature is about 2.5 × 10
3v/W@30Hz, detectivity is about 7.6 × 10
8cmHz
0.5/ W@30Hz, time constant is 7 milliseconds.
Claims (1)
1. a back of the body incident immersion thermosensitive film type Infrared Detectors, is characterized in that: the integrated one germanium single crystal packaged lens (4) that can assemble infrared signal on the substrate back of described thermosensitive film type Infrared Detectors; Described germanium single crystal packaged lens (4) is the germanium hemisphere crystal that refractive index n=4, resistivity are greater than 30 Ω cm, plated surface and are shaped with anti-reflecting layer, is coated with as dielectric layer and Infrared Detectors carries out bonding selenium arsenic compound film in its bottom surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410020924.8A CN103855238B (en) | 2014-01-17 | 2014-01-17 | A kind of back of the body incident immersion thermosensitive film type Infrared Detectors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410020924.8A CN103855238B (en) | 2014-01-17 | 2014-01-17 | A kind of back of the body incident immersion thermosensitive film type Infrared Detectors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103855238A true CN103855238A (en) | 2014-06-11 |
| CN103855238B CN103855238B (en) | 2016-05-18 |
Family
ID=50862651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410020924.8A Active CN103855238B (en) | 2014-01-17 | 2014-01-17 | A kind of back of the body incident immersion thermosensitive film type Infrared Detectors |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103855238B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110137299A (en) * | 2019-05-17 | 2019-08-16 | 中国科学院上海技术物理研究所 | A kind of enhanced Infrared Thin Films detector and preparation method based on silicon dielectric structure |
| CN110160658A (en) * | 2019-05-17 | 2019-08-23 | 中国科学院上海技术物理研究所 | It is a kind of to etch enhanced uncooled ir thin film detector and preparation method |
| CN110160659A (en) * | 2019-05-17 | 2019-08-23 | 中国科学院上海技术物理研究所 | A kind of the uncooled ir narrowband detector and preparation method of sensitive first etching type |
| CN110265491A (en) * | 2019-05-17 | 2019-09-20 | 中国科学院上海技术物理研究所 | A kind of the uncooled ir narrowband detector and preparation method on the super surface of silicon medium |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62119420A (en) * | 1985-11-20 | 1987-05-30 | Matsushita Electric Ind Co Ltd | Pyroelectric type infrared detection element |
| RU2071147C1 (en) * | 1994-04-22 | 1996-12-27 | Валерий Игнатьевич Туринов | Immersion infrared photodetector |
| CN102200639A (en) * | 2011-06-15 | 2011-09-28 | 中国科学院上海技术物理研究所 | Infrared medium-long wave double wave band imaging optical system |
| CN203774352U (en) * | 2014-01-17 | 2014-08-13 | 中国科学院上海技术物理研究所 | Back-incident immersed type thermosensitive film infrared detector |
-
2014
- 2014-01-17 CN CN201410020924.8A patent/CN103855238B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62119420A (en) * | 1985-11-20 | 1987-05-30 | Matsushita Electric Ind Co Ltd | Pyroelectric type infrared detection element |
| RU2071147C1 (en) * | 1994-04-22 | 1996-12-27 | Валерий Игнатьевич Туринов | Immersion infrared photodetector |
| CN102200639A (en) * | 2011-06-15 | 2011-09-28 | 中国科学院上海技术物理研究所 | Infrared medium-long wave double wave band imaging optical system |
| CN203774352U (en) * | 2014-01-17 | 2014-08-13 | 中国科学院上海技术物理研究所 | Back-incident immersed type thermosensitive film infrared detector |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110137299A (en) * | 2019-05-17 | 2019-08-16 | 中国科学院上海技术物理研究所 | A kind of enhanced Infrared Thin Films detector and preparation method based on silicon dielectric structure |
| CN110160658A (en) * | 2019-05-17 | 2019-08-23 | 中国科学院上海技术物理研究所 | It is a kind of to etch enhanced uncooled ir thin film detector and preparation method |
| CN110160659A (en) * | 2019-05-17 | 2019-08-23 | 中国科学院上海技术物理研究所 | A kind of the uncooled ir narrowband detector and preparation method of sensitive first etching type |
| CN110265491A (en) * | 2019-05-17 | 2019-09-20 | 中国科学院上海技术物理研究所 | A kind of the uncooled ir narrowband detector and preparation method on the super surface of silicon medium |
| CN110160659B (en) * | 2019-05-17 | 2023-09-12 | 中国科学院上海技术物理研究所 | Uncooled infrared narrow-band detector with etched sensitive elements and preparation method |
| CN110160658B (en) * | 2019-05-17 | 2023-11-07 | 中国科学院上海技术物理研究所 | Etching enhancement type uncooled infrared film detector and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103855238B (en) | 2016-05-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI294035B (en) | Analyzer using optical tunable filter and light-receiving portion | |
| CN103715307A (en) | Non-refrigeration infrared detector and preparation method thereof | |
| CN103855238B (en) | A kind of back of the body incident immersion thermosensitive film type Infrared Detectors | |
| KR100925214B1 (en) | Bolometer and manufacturing method thereof | |
| CN103708406B (en) | It is a kind of can insulation package stress resonant mode infrared detector structure and production method | |
| EP1637852A1 (en) | Infrared absorption layer structure and its formation method, and an uncooled infrared detector using this structure | |
| CN104465850B (en) | Pyroelectric infrared detector based on Graphene absorbed layer and manufacture method thereof | |
| CN203774352U (en) | Back-incident immersed type thermosensitive film infrared detector | |
| CN113363331A (en) | Double-lens infrared sensor | |
| CN103364120A (en) | Silver-tin eutectic vacuum bonding metal variant-type MEMS pressure transistor and manufacturing method thereof | |
| CN103852171B (en) | A kind of non-brake method Long Wave Infrared Probe absorbent layer structure | |
| CN110943138B (en) | Colloidal quantum dot infrared focal plane array based on interference enhancement structure and preparation method | |
| CN110617882B (en) | Temperature-sensing terahertz detector based on phase-change material and preparation method | |
| CN107068780B (en) | Method for oxidation prepares the infrared detector and preparation method thereof of titanium oxide heat-sensitive layer | |
| CN104112753A (en) | Infrared detector and infrared imaging system, and preparation methods thereof | |
| CN110349946A (en) | A kind of temperature pattern sensor and preparation method thereof | |
| EP3598088A1 (en) | Pyroelectric sensor | |
| CN203774351U (en) | Normal-incident immersed type non-refrigerating film infrared detector | |
| CN102928089B (en) | Uncooled pyroelectric linear focal plane and manufacturing method thereof | |
| US20200232853A1 (en) | Non-contact type infrared temperature sensor module | |
| CN203772418U (en) | Absorbing layer structure for non-refrigerating long-wave infrared detector | |
| CN204128692U (en) | The infrared imaging detector of a kind of pixel cell and formation thereof | |
| CN103855237B (en) | Normal-incidence immersed non-refrigeration film type infrared detector | |
| CN102004002A (en) | HgCdTe infrared photoconductive detector with reference element structure | |
| CN104409554A (en) | Carbon black absorbing layer-based pyroelectric infrared detector and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |