CN110349946A - A kind of temperature pattern sensor and preparation method thereof - Google Patents

A kind of temperature pattern sensor and preparation method thereof Download PDF

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Publication number
CN110349946A
CN110349946A CN201910697080.3A CN201910697080A CN110349946A CN 110349946 A CN110349946 A CN 110349946A CN 201910697080 A CN201910697080 A CN 201910697080A CN 110349946 A CN110349946 A CN 110349946A
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CN
China
Prior art keywords
temperature
readout circuit
chip
circuit chip
layer
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CN201910697080.3A
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Chinese (zh)
Inventor
魏斌
翟光杰
翟光强
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Beijing North High Industry Technology Co Ltd
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Beijing North High Industry Technology Co Ltd
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Priority to CN201910697080.3A priority Critical patent/CN110349946A/en
Publication of CN110349946A publication Critical patent/CN110349946A/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0806—Focusing or collimating elements, e.g. lenses or concave mirrors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J2005/0077—Imaging
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J2005/202—Arrays
    • G01J2005/204—Arrays prepared by semiconductor processing, e.g. VLSI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus

Abstract

The embodiment of the invention discloses a kind of temperature pattern sensor and preparation method thereof, which includes: readout circuit chip, storage chip and the temperature sensing chip including at least one sensing pixels unit；Readout circuit chip includes opposite the first face and the second face；Storage chip is bonded in the first face of readout circuit chip by the first bonded layer, temperature sensing chip is bonded in the second face of readout circuit chip by the second bonded layer, storage chip and readout circuit chip are bonded by the first bonded layer, temperature sensing chip and readout circuit chip are bonded by the second bonded layer, simplify the preparation process of temperature pattern sensor, reduce preparation cost, it is advantageously implemented the volume production of temperature pattern sensor, and under the premise of guaranteeing the function of temperature pattern sensor, reduce the area of temperature pattern sensor, realize the miniaturization of temperature pattern sensor.

Description

A kind of temperature pattern sensor and preparation method thereof
Technical field
The present embodiments relate to temperature detection technical field more particularly to a kind of temperature pattern sensor and its preparation sides Method.
Background technique
In recent years, non-contact temperature measuring sensor, especially array temperature sensor using more and more extensive.
In the prior art, non-contact temperature measuring sensor is most of all integrated complete on a single die by all building blocks At, the completion of CMOS-MEMS technique, but the poor compatibility of CMOS and MEMS are generallyd use, thus it is high to technique requirement, therefore make It is high at non-contact temperature measuring sensor preparation cost, and it is not easy volume production；And all building blocks of temperature transducer are integrated in one On a chip, so that chip area is larger.
Summary of the invention
The present invention provides a kind of temperature pattern sensor and preparation method thereof, to realize the system for simplifying temperature pattern sensor Standby technique, reduces preparation cost, realizes the volume production of temperature pattern sensor, and before the function of guaranteeing temperature pattern sensor It puts, reduces the area of temperature pattern sensor.
In a first aspect, the embodiment of the invention provides a kind of temperature pattern sensors, comprising: readout circuit chip, storage Chip and temperature sensing chip including at least one sensing pixels unit；Readout circuit chip include opposite the first face and Second face；
Storage chip is bonded in the first face of readout circuit chip by the first bonded layer, and temperature sensing chip passes through second Bonded layer is bonded in the second face of readout circuit chip.
Optionally, temperature pattern sensor further includes at least one lens, and lens are set to sensing pixels unit far from reading The side of circuit chip out, lens cover temperature sensing chip, and each lens at least covers one sensing pixels unit, lens and Readout circuit chip or storage chip are bonded by third bond layer.
Optionally, each sensing pixels unit includes that the first temperature absorbs subelement and the first conduction subelement, the first temperature Degree absorb subelement include the first temperature sensor, the first reflecting layer and the first temperature sensor and the first reflecting layer it Between first medium layer, wherein the first reflecting layer is between the first temperature sensor and readout circuit chip；
One end of first conduction subelement is electrically connected with the first temperature sensor, and the other end of the first conduction subelement is logical The second bonded layer is crossed to be electrically connected with readout circuit chip；First reflecting layer includes the first metal close to the side of readout circuit chip Pad, the first metal pad are electrically connected through the first reflecting layer with the first conduction subelement, and the first metal pad passes through the second key Layer is closed to be electrically connected with readout circuit chip；Wherein, temperature pattern sensor runs through the portion in the first reflecting layer in the first metal pad Dividing includes the first insulating medium layer for coating the first metal pad.
Optionally, first medium layer is vacuum layer；
Or first medium layer includes by one of silica, silicon nitride, silicon oxynitride, silicon carbide or a variety of forming Second sub- dielectric layer of one sub- dielectric layer and vacuum, the second sub- dielectric layer between the first sub- dielectric layer and the first reflecting layer, First temperature sensor is located at the first sub- dielectric layer close to or far from the side of readout circuit chip；
It further includes the first absorption metal layer that first temperature, which absorbs subelement, and the metal array of the first absorption metal layer is arranged in The side of the close or separate readout circuit chip of first sub- dielectric layer, and surround the first temperature sensor.
Optionally, temperature sensing chip further includes reference pixel unit, and each reference pixel unit includes that second temperature is inhaled Subelement and the second conduction subelement are received, it includes that second temperature Sensitive Apparatus and second temperature are quick that second temperature, which absorbs subelement, Second dielectric layer between inductor component and readout circuit chip；
One end of second conduction subelement is electrically connected with second temperature Sensitive Apparatus, and the other end of the second conduction subelement is logical The second bonded layer is crossed to be electrically connected with readout circuit chip；
The thermal absorptivity that second temperature absorbs subelement absorbs the thermal absorptivity of subelement less than the first temperature.
Optionally, the first temperature sensor includes first end and second end, and the first conduction subelement includes at least and the One temperature sensor first end electrical connection the first conductive beam and be electrically connected with the first temperature sensor second end second Conductive beam, the first conductive beam and the second conductive beam are electrically connected by the second bonded layer with readout circuit chip；
Second temperature Sensitive Apparatus includes third end and the 4th end, and the second conduction subelement includes at least quick with second temperature The third conductive beam of inductor component third end electrical connection and the 4th conductive beam being electrically connected with the 4th end of second temperature Sensitive Apparatus, the Three conductive beams and the 4th conductive beam are electrically connected by the second bonded layer with readout circuit chip；
Wherein, the first conductive beam, the second conductive beam, third conductive beam and the 4th conductive beam are the strip for including an at least folding Or column structure；
First conductive beam, the second conductive beam, third conductive beam and the 4th conductive beam include directly with the first temperature sensing device First of part or the electrical connection of second temperature Sensitive Apparatus, second be electrically connected with readout circuit chip and connect first Third portion between portion and second.
Second aspect, the embodiment of the invention also provides a kind of preparation methods of temperature pattern sensor, comprising:
Readout circuit chip, storage chip and the temperature sensing chip including at least one sensing pixels unit are provided, Middle readout circuit chip includes opposite the first face and the second face；
Readout circuit chip and storage chip are bonded, storage chip is bonded in the first face of readout circuit chip；
By after bonding readout circuit chip and storage chip be bonded with temperature sensing chip, temperature sensing chip key It closes in the second face of readout circuit chip.
Optionally, after being bonded the readout circuit chip after being bonded and storage chip with temperature sensing chip, Further include:
At least one lens is provided；
In side of the sensing pixels unit far from readout circuit chip, lens are bonded with readout circuit chip；Or Person is bonded in side of the sensing pixels unit far from readout circuit chip, by lens with storage chip；
Wherein, each lens at least cover a sensing pixels unit.
Optionally, the temperature sensor chip including at least one sensing pixels unit is provided, comprising:
Silicon base is provided；
Thermo-sensitive material and graphical is deposited in the side of silicon base, forms at least one first temperature sensor；
First be electrically connected with the first temperature sensor is formed far from the side of silicon base in the first temperature sensor Conduct subelement；
Side deposition of reflective layer material of the subelement far from silicon base is conducted first；
Graphical reflector material, to form the first groove of perforation reflector material, the first conduction of the first groove exposure Subelement；
Insulating medium layer is deposited in side of the reflector material far from silicon base and the first groove, so that the first recess sidewall Coat dielectric；
Etch the insulating medium layer in the first groove on the first conduction subelement；
The deposited metal material in the first groove, to form metal far from the side of the first temperature sensor in reflecting layer Pad.
Optionally, by after bonding readout circuit chip and storage chip be bonded with temperature sensing chip, comprising:
By after bonding readout circuit chip and storage chip be bonded with the metal pad of temperature sensing chip；
In side of the sensing pixels unit far from readout circuit chip, lens are bonded with readout circuit chip；Or Person is in side of the sensing pixels unit far from readout circuit chip, before lens are bonded with storage chip, further includes:
Reduction processing is carried out to the silicon base of temperature sensing chip.
Optionally, thermo-sensitive material and graphical is deposited in the side of silicon base, forms at least one first temperature sensing device Part, comprising:
The first sub- dielectric layer is deposited on a silicon substrate；
Thermo-sensitive material and graphical is deposited far from the side of silicon base in first medium layer, forms at least one first temperature Sensitive Apparatus.
Optionally, thermo-sensitive material and graphical is deposited in the side of silicon base, forms at least one first temperature sensing device After part, comprising:
The first sub- dielectric layer is deposited far from the side of silicon base in the first temperature sensor.
Optionally, on a silicon substrate before the first sub- dielectric layer of deposition, comprising:
In the side deposit absorbent metal layer of silicon base and graphical.
Optionally, on a silicon substrate after the first sub- dielectric layer of deposition, comprising:
In side deposit absorbent metal layer of the first sub- dielectric layer far from silicon base and graphical, so as to absorb metal layer Metal array arranges and surrounds the first temperature-sensing element (device).
Optionally, after the first temperature sensor deposits the first sub- dielectric layer far from the side of silicon base, further includes:
In side deposit absorbent metal layer of the first sub- dielectric layer far from silicon base and graphical, so as to absorb metal layer Metal array arranges and surrounds the first temperature-sensing element (device).
Optionally, before the first temperature sensor deposits the first sub- dielectric layer far from the side of silicon base, comprising:
In the side of silicon base in deposit absorbent metal layer and graphical, so as to absorb the metal array arrangement of metal layer simultaneously Surround the first temperature-sensing element (device).
Optionally, graphical reflector material, further includes:
The reflector material of the first temperature sensor of covering part is etched.
Optionally, it is formed in the first temperature sensor far from the side of silicon base and is electrically connected with the first temperature sensor First conduction subelement, comprising:
The first sacrificial layer, graphical first sacrificial layer, shape are deposited far from the side of silicon base in the first temperature sensor Run through the second groove of the first sacrificial layer at part, and what is be connected with the second groove through the first sacrificial layer be not penetrated the The third groove of one sacrificial layer；
Electric signal conductive material is deposited in the second groove and third groove, forms the of the first temperature sensor of connection First and third portion of one conduction subelement；
The side deposition far from silicon base the in the first conduction first of subelement and third portion and the first sacrificial layer Two sacrificial layers, graphical second sacrificial layer form the 4th groove of the second sacrificial layer of perforation, the 4th groove exposure the first conduction The third portion of unit；
Electric signal conductive material is deposited in the 4th groove, the electric signal conductive material in the 4th groove forms first and passes Second of guide unit.
The embodiment of the invention provides a kind of temperature pattern sensor and preparation method thereof, temperature pattern sensor includes reading Circuit chip, storage chip and the temperature sensing chip including at least one sensing pixels unit, storage chip and reading out Circuit chip is bonded in the first face of readout circuit chip by the first bonded layer, and temperature sensing chip and readout circuit chip are logical The second face that the second bonded layer is bonded in readout circuit chip is crossed, the preparation process of temperature pattern sensor is simplified, reduces Preparation cost realizes the volume production of temperature pattern sensor, and under the premise of guaranteeing the function of temperature pattern sensor, reduces The area of temperature pattern sensor.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of temperature pattern sensor provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of another temperature pattern sensor provided in an embodiment of the present invention；
Fig. 3 is a kind of structural schematic diagram of sensing pixels unit provided in an embodiment of the present invention；
Fig. 4 is a kind of the schematic diagram of the section structure of sensing pixels unit provided in an embodiment of the present invention；
Fig. 5 is the structural schematic diagram of another temperature pattern sensor provided in an embodiment of the present invention；
Fig. 6 is the structural schematic diagram of another temperature pattern sensor provided in an embodiment of the present invention；
Fig. 7 is a kind of structural schematic diagram of reference pixel unit provided in an embodiment of the present invention；
Fig. 8 is the structural schematic diagram of another reference pixel unit provided in an embodiment of the present invention；
Fig. 9 is the structural schematic diagram of another sensing pixels unit provided in an embodiment of the present invention；
Figure 10 is the structural schematic diagram of another sensing pixels unit provided in an embodiment of the present invention；
Figure 11 is a kind of top view of sensing pixels unit provided in an embodiment of the present invention；
Figure 12 is a kind of flow diagram of the preparation method of temperature pattern sensor provided in an embodiment of the present invention；
Figure 13 is by the structural schematic diagram after readout circuit chip and storage chip bonding；
Figure 14 is a kind of flow diagram of the preparation method of temperature sensor chip provided in an embodiment of the present invention；
Figure 15-Figure 19 is the structural representation in step each in formation temperature sensor chip provided in an embodiment of the present invention Figure；
Figure 20 is the readout circuit chip by after bonding and storage chip provided in an embodiment of the present invention and temperature sensing The metal pad of chip be bonded after structural schematic diagram；
Figure 21 is that the structure after the silicon base progress reduction processing provided in an embodiment of the present invention to temperature sensing chip is shown It is intended to；
Figure 22 is a kind of structural representation of temperature sensing chip including the first sub- dielectric layer provided in an embodiment of the present invention Figure；
Figure 23-Figure 26 is the portion of temperature sensing chip during the first conduction of formation subelement provided in an embodiment of the present invention Separation structure schematic diagram.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
Fig. 1 is a kind of structural schematic diagram of temperature pattern sensor provided in an embodiment of the present invention, temperature pattern sensing Device can be used for non-contact temperature detection and thermal imaging, and with reference to Fig. 1, which includes: reading circuit core Piece 100, storage chip 400 and the temperature sensing chip 200 including at least one sensing pixels unit 210；Reading circuit core Piece 100 includes opposite the first face and the second face；Storage chip 400 is bonded in readout circuit chip by the first bonded layer 500 100 the first face, temperature sensing chip 200 are bonded in the second face of readout circuit chip 100 by the second bonded layer 300.
Wherein, which can be non-contact temperature sensor, and the second of readout circuit chip 100 Face can be the front of readout circuit chip 100, and the second face can be the back side of readout circuit chip 100.Fig. 1 schematically shows Temperature pattern sensor is the situation of array face temperature transducer out, includes 9 battle arrays with temperature sensing chip 200 with reference to Fig. 1 Illustrated for the sensing pixels unit 210 of column arrangement.Specifically, any object is being higher than absolute zero generally all with heat Radiation, temperature sensing chip 200 can be collected and perceive to the heat radiation of object, and convert the heat radiation being collected into Electric signal.Readout circuit chip 100 can be read out electric signal, handle and export, and then obtain the temperature of object being measured Degree.Storage chip 400 can store the electric signal of the measured object temperature of the output of readout circuit chip 100.
It should be noted that those skilled in the art may be based on the present invention will be collected into using temperature sensing chip 200 Heat radiation be converted into the signals such as optics or mechanics, and believed using optical signalling reading device or mechanical signal reading device etc. Number reading device is read out the signals such as optical signalling or mechanics, and then obtains the temperature of object being measured.
Readout circuit chip 100 and storage chip 400 are passed through the first key by temperature pattern sensor provided in this embodiment It closes layer 500 to be bonded, temperature sensing chip 200 and readout circuit chip 100 is passed through into the second bonded layer 300 and are bonded, such as can be with Based on CIS (cmos image sensor) bonding and wafer thinning technique platform, by readout circuit chip 100 and storage chip 400, with And temperature sensing chip 200 is bound directly by bonding technology respectively with readout circuit chip 100, compared with the existing technology The integrated structure on the same chip of middle temperature imaging sensor, can make the preparation process of temperature pattern sensor more Simply, it is advantageously implemented mass production, and temperature pattern sensor provided in an embodiment of the present invention can directly pass through bonding Storage chip 400 is bonded by technique with readout circuit chip 100, and directly passes through bonding technology for temperature sensing chip 200 are bonded with readout circuit chip 100, without MEMS technology, can be reduced production cost, be improved yield rate.And And storage chip 400 and temperature sensing chip 200 are bonded in opposite the first face and second of readout circuit chip 100 respectively Face, compared with the prior art in by the integrated structure in one plane of all components of temperature pattern sensor, can protect On the basis of demonstrate,proving temperature pattern sensor function, reduce the area of temperature pattern sensor, is advantageously implemented temperature pattern sensing The miniaturization of device.
Temperature pattern sensor provided in an embodiment of the present invention includes readout circuit chip, storage chip and including at least The temperature sensing chip of one sensing pixels unit, storage chip carry out being bonded in readout circuit chip by the first bonded layer First face, temperature sensing chip are carried out the second face for being bonded in readout circuit chip by the second bonded layer, simplify temperature The preparation process for spending imaging sensor, reduces preparation cost, is advantageously implemented the volume production of temperature pattern sensor, and guaranteeing Under the premise of the function of temperature pattern sensor, the area of temperature pattern sensor is reduced, is advantageously implemented temperature pattern biography The miniaturization of sensor.
Fig. 2 is the structural schematic diagram of another temperature pattern sensor provided in an embodiment of the present invention, with reference to Fig. 2, upper On the basis of stating scheme, optionally, which further includes at least one lens 600, and lens 600 are set to sensing Side of the pixel unit 210 far from readout circuit chip 100, lens 600 cover temperature sensing chip 200, each lens 600 to A sensing pixels unit 210, lens 600 and readout circuit chip 100 are covered less or storage chip 400 passes through third bond layer 700 bondings.
Wherein, lens 600 can be silicon lens, be also possible to germainium lens, optionally, 600 permission specific bands of lens Heat radiation penetrate, such as lens 600 can only allow infrared transmission.Fig. 2 schematically illustrates lens 600 and covers 9 sensings Pixel unit 210, lens 600 are bonded with readout circuit chip 100 by the second bonded layer 300 and four third bond layers 700 The case where.Readout circuit chip 100 and storage chip 400 generally include substrate, and when practical application, lens 600 can also be with reading The substrate of circuit chip 100 or storage chip 400 is directly bonded out, i.e., does not only pass through lens by the second bonded layer 300 Third bond layer 700 between 600 and the substrate of readout circuit chip 100 or storage chip 400 is directly bonded, third key The shape for closing layer 700 can be two or more column structures, can be located at any symmetrical position at 210 edge of sensing pixels unit It sets, is not in contact with temperature sensing chip 200, it also may include multiple that temperature pattern sensor, which may include a lens, Mirror；Wherein, when temperature pattern sensor includes a lens 600, a lens 600 cover entire temperature sensing chip, temperature When imaging sensor includes multiple lens 600, each lens 600 at least cover a sensing pixels unit 210.
Fig. 3 is a kind of structural schematic diagram of sensing pixels unit provided in an embodiment of the present invention, with reference to Fig. 3, in above-mentioned side On the basis of case, optionally, each sensing pixels unit includes that the first temperature absorbs subelement 211 and the first conduction subelement 213 (wherein, being shown so that the first conduction subelement 213 includes two conductive beams 2131 and 2132 as an example in Fig. 3), first It includes the first temperature sensor 2111, the first reflecting layer 2113 and the first temperature sensor that temperature, which absorbs subelement 211, 2111 and the first first medium layer 2112 between reflecting layer 2113, wherein the first reflecting layer 2113 is located at the first temperature sensing device Between part 2111 and readout circuit chip 100；One end of first conduction subelement 213 is electrically connected with the first temperature sensor 2111 It connects, the other end of the first conduction subelement 213 is electrically connected by the second bonded layer 300 with readout circuit chip 100；Fig. 4 is this The schematic diagram of the section structure for a kind of sensing pixels unit that inventive embodiments provide, wherein sensing pixels unit shown in Fig. 4 cut open Face schematic diagram can be obtained by Fig. 3 along A-A ' cutting, it should be noted that temperature pattern in Fig. 3 is schematically shown only in Fig. 4 The part of sensor rather than entire infrastructure, with reference to Fig. 3 and Fig. 4, the first reflecting layer 2113 is close to the side of readout circuit chip 100 Including the first metal pad 214, the first metal pad 214 is electrically connected through the first reflecting layer 2113 and the first conduction subelement 213 It connects, the first metal pad 214 is electrically connected by the second bonded layer 300 with readout circuit chip 100；Wherein, temperature pattern senses Device includes the first insulation for coating the first metal pad 214 through the part in the first reflecting layer 2113 in the first metal pad 214 Dielectric layer 215, so that the first metal pad 214 and the first reflecting layer 2113 are insulated, so that electric signal will not be transmitted to first instead Layer 2113 is penetrated, guarantees the reliability of electric signal transmission.
With reference to Fig. 3 and Fig. 4, specifically, the material of the first reflecting layer 2113 and the first metal pad 214 can be gold, silver, Copper, aluminium, tungsten, titanium, nickel alloy etc. pass through the first insulating medium layer 215 between the first metal pad 214 and the first reflecting layer 2113 Insulation, the first insulating medium layer 215 can be silica, silicon nitride, silicon oxynitride, silicon carbide, amorphous carbon etc., use hygrogram When as sensor detection testee temperature, when the heat of testee radiation reaches temperature pattern sensor surface, picture is sensed First temperature of plain unit 210, which absorbs subelement 211, can absorb quilt by the first reflecting layer 2113 and first medium layer 2112 Temperature change occurs for the heat for surveying object radiation, and the first temperature sensor 2111 can sense the first temperature and absorb subelement 211 temperature change, by the temperature variations sensed be converted into electric signal conduct to first conduction subelement 213, first Conduction subelement 213 will by the first metal pad 214 and the second bonded layer 300 being electrically connected with the first metal pad 214 The electric signal of temperature variations is conducted to readout circuit chip 100, and readout circuit chip 100 can read electric signal It takes, handle and export, and then obtain the temperature of object being measured, and be stored in storage chip 400, and then realize to temperature Measurement.
On the basis of above scheme, optionally, first medium layer 2112 is vacuum layer (temperature pattern shown in corresponding diagram 3 Sensor)；Fig. 5 is the structural schematic diagram of another temperature pattern sensor provided in an embodiment of the present invention, with reference to Fig. 5, first Dielectric layer 2112 includes by one of silica, silicon nitride, silicon oxynitride, silicon carbide or a variety of forming the first sub- dielectric layer 21121 and vacuum the second sub- dielectric layer 21122, the second sub- dielectric layer 21122 is located at the first sub- dielectric layer 21121 with first instead It penetrates between layer 2113, the first temperature sensor 2111 is located at the first sub- dielectric layer 21121 close to or far from readout circuit chip 100 side；It further includes the first absorption metal layer 2114 that first temperature, which absorbs subelement 211, and first absorbs metal layer 2114 Metal array is arranged in the side of the first close or separate readout circuit chip 100 of sub- dielectric layer 21121, and surrounds the first temperature Spend Sensitive Apparatus 2111.
With reference to Fig. 3, specifically, the first temperature absorbs subelement 211 and forms resonance when first medium layer 2112 is vacuum layer Cavity configuration, the first temperature absorb subelement 211 and directly pass through the first temperature sensor 2111, first medium layer 2112 and first The heat that reflecting layer 2113 radiates testee effectively absorbs；First temperature sensor 2111 can sense One temperature absorbs the temperature change of subelement 211, converts electric signal for the temperature variations sensed and conducts to the first biography Guide unit 213, and conducted the electric signal of temperature variations to readout circuit chip by the first conduction subelement 213 100 and storage chip 400 in, realize measurement and storage to temperature.
With reference to Fig. 5, specifically, first medium layer 2112 includes by silica, silicon nitride, silicon oxynitride, silicon carbide One or more the second sub- dielectric layers 21122 for forming the first sub- dielectric layer 21121 and vacuum, when, the first sub- dielectric layer 21121 It can be used for carrying the first temperature sensor 2111；It can also be arranged first in the side of the first sub- dielectric layer 21121 and absorb metal Layer 2114.First absorption metal layer 2114 can be gold, silver, copper, aluminium, tungsten, titanium, nickel alloy etc., and first medium layer 2112 can be adopted With one of silica, silicon nitride, silicon oxynitride, silicon carbide or a variety of insulating materials, avoid influencing the first temperature sensing device The transmission of electric signal between part 2111 and readout circuit chip 100, it includes the first sub- dielectric layer that first medium layer 2112, which is arranged, to be 21121 and vacuum medium formed the second sub- dielectric layer 21122 structure, and the side of the first sub- dielectric layer 21121 be arranged First absorbs metal layer 2114, and first absorbs the metal that metal layer 2114 includes array arrangement, and the first temperature can be made to inhale Receive subelement 211 formed metamaterial structure, be conducive to improve the first temperature absorb subelement 211 absorb thermal radiation absorption rate and Absorber Bandwidth, and then improve the sensitivity and resolution ratio of temperature pattern sensor.
It should be noted that the first temperature, which absorbs subelement 211, can also only include one or more layers the first sub- dielectric layer 21121, two surfaces difference of the first sub- dielectric layer 21121 away from readout circuit chip 100 and towards readout circuit chip 100 Carrying first absorbs the first reflecting layer 2113 of metal layer 2114 and contact, forms dielectric layer structure, the present invention is not done specifically herein It limits.
Fig. 5 shows the first temperature sensor 2111 and is located at the first sub- dielectric layer 21121 far from readout circuit chip 100 Side the case where, first absorb metal layer 2114 surround the first temperature sensor 2111, be more advantageous to the first temperature sensitivity The sensing of device 2,111 first absorbs the heat for the testee radiation that metal layer 2114 absorbs.Optionally, the first temperature sensing device Part 2111 is located at the center of the first sub- dielectric layer 21121 so that the first temperature sensor 2111 sense it is each It is impartial that first temperature of position absorbs the heat that subelement 211 is absorbed, so that temperature pattern sensor detection temperature is more quasi- Really.
It should be noted that the first temperature sensor 2111 is located at the first sub- dielectric layer 21121 close to reading circuit core The case where side of piece 100, is not shown, and the first temperature sensor 2111 is located at the first sub- dielectric layer 21121 close to reading circuit When the side of chip 100, upright projection of the first absorption metal layer 2114 on readout circuit chip 100 can surround the first temperature Upright projection of the Sensitive Apparatus 2111 on readout circuit chip 100 is spent, the first temperature sensor 2111 sensing is more advantageous to First absorbs the heat for the testee radiation that metal layer 2114 absorbs, and is chosen as the first temperature sensor 2111 and is located at the The center of one sub- 21121 surface of dielectric layer or inside.
Wherein, the first absorption metal layer 2114 can be blocky, crosswise or annular shape.When the first upper layer metal 2111 is When blocky, top view can be square, and be also possible to rectangle, and the present invention is not specifically limited herein, and Fig. 5 absorbs gold with first Belonging to layer 2114 is bulk, and the surface that metal array is arranged in side of the first medium layer 2112 far from readout circuit chip 100 is Example is schematically illustrated, and the first temperature absorbs subelement 211 and passes through first medium layer 2112, the first reflecting layer 2113 and the The heat that the metal array of one absorption metal layer 2114 can radiate testee effectively absorbs, the heat collection of absorption In in first medium layer 2112, then conduct to readout circuit chip 100, the thickness of readout circuit chip 100 is usually thicker, Can play the role of it is heat sink, and then can make temperature pattern sensor carry out a temperature detection after, the first temperature absorb son Unit 211 is conducted in time from the heat that the external world absorbs, and then does not influence temperature detection next time, guarantees temperature pattern The detection accuracy of sensor.Can also work readout circuit chip 100 given out heat of first reflecting layer 2113 rises To reflex, reduces the absorption absorption work of readout circuit chip 100 of subelement 211 of the first temperature and distribute the measurement of heat bring Error.
It should be noted that Fig. 5 schematically shows only 2114 array arrangement of the first absorption metal layer in first medium The case where surface of 2112 side far from readout circuit chip 100 of layer, first absorbs 2114 array arrangement of metal layer in first Dielectric layer 2112 is not shown close to the case where surface of the side of readout circuit chip 100, but first absorbs metal layer 2114 Array arrangement equally may make the first absorption metal close to the surface of the side of readout circuit chip 100 in first medium layer 2112 Layer 2114, first medium layer 2112 and the first reflecting layer 2113 form metamaterial structure, and have above-mentioned metamaterial structure institute band The beneficial effect come.
Fig. 6 is the structural schematic diagram of another temperature pattern sensor provided in an embodiment of the present invention, with reference to Fig. 6, upper On the basis of stating technical solution, optionally, temperature sensing chip 200 further includes reference pixel unit 220, and Fig. 7 is that the present invention is real The structural schematic diagram for applying a kind of reference pixel unit of example offer, with reference to Fig. 6 and Fig. 7, each reference pixel unit 220 includes the Two temperature absorb subelement 221 and the second conduction subelement 223, and it includes that second temperature is sensitive that second temperature, which absorbs subelement 221, Second dielectric layer 2212 between device 2211 and second temperature Sensitive Apparatus 2211 and readout circuit chip 100；Second passes One end of guide unit 223 is electrically connected with second temperature Sensitive Apparatus 2211, and the other end of the second conduction subelement 223 passes through the Two bonded layers 300 are electrically connected with readout circuit chip 100；Second temperature absorbs the thermal absorptivity of subelement 221 less than the first temperature Degree absorbs the thermal absorptivity of subelement 211.
Specifically, the second temperature of reference pixel unit 220 absorbs subelement 221 to the thermal radiation absorption rate of testee Far smaller than the first temperature of sensing pixels unit 210 absorbs thermal radiation absorption rate of the subelement 211 to testee, reference image Plain unit 220 can be used for excluding temperature pattern sensor detection testee temperature course in self-heating to measurement result It influences, ideally, reference pixel unit 220 does not absorb the heat that testee is radiated, only absorbs temperature pattern sensing Device itself works distributed heat, with reference to Fig. 7, in the reference pixel unit, second temperature absorb subelement 221 do not have it is anti- Layer is penetrated, sensing pixels unit can be made less to the absorption of External Heat Flux.Readout circuit chip 100 can read sensing respectively The second temperature of electric signal and reference pixel unit 220 that first temperature sensor 2111 of pixel unit 210 is transmitted The electric signal of Sensitive Apparatus 2211, and handled, such as the electric signal that the first temperature sensor 2111 is transmitted is corresponding The corresponding temperature of electric signal that temperature and second temperature Sensitive Apparatus 2211 transmit is made the difference, and then excludes sensing pixels unit The influence of the factors such as 100 circuit bias bring temperature rise of 210 itself thermal agitation and readout circuit chip.Fig. 8 is implementation of the present invention The structural schematic diagram for another reference pixel unit that example provides, with reference to Fig. 8, optionally, second temperature absorbs subelement 221 also Including second absorb metal layer 2214, second absorb metal layer 2214 can be planar, be laid in second dielectric layer 2212 towards Or the surface away from 100 side of readout circuit chip.The second of reference pixel unit shown in Fig. 8 220 absorbs metal layer 2214 Planar can reflect the heat that external object is distributed, and reference pixel unit 220 is made less to absorb what external object was distributed Heat.
With reference to Fig. 3 and Fig. 7, based on the above technical solution, optionally, the first temperature sensor 2111 includes the One end and second end, the first conduction subelement 213 include at least the be electrically connected with 2111 first end of the first temperature sensor One conductive beam 2131 and the second conductive beam 2132 being electrically connected with 2111 second end of the first temperature sensor, the first conductive beam 2131 and second conductive beam 2132 be electrically connected with readout circuit chip 100 by the second bonded layer 300；
Second temperature Sensitive Apparatus 2211 includes third end and the 4th end, and the second conduction subelement 223 includes at least and the Two temperature sensors, 2211 third end electrical connection third conductive beam 2231 and with the 4th end of second temperature Sensitive Apparatus 2211 4th conductive beam 2232 of electrical connection, third conductive beam 2231 and the 4th conductive beam 2232 pass through the second bonded layer 300 and reading Circuit chip 100 is electrically connected；
Wherein, the first conductive beam 2131, the second conductive beam 2132, third conductive beam 2231 and the 4th conductive beam 2232 are packet Include the strip or column structure of an at least folding；
First conductive beam 2131, the second conductive beam 2132, third conductive beam 2231 and the 4th conductive beam 2232 include direct First be electrically connected with the first temperature sensor 2111 or second temperature Sensitive Apparatus 2211 and readout circuit chip 100 Third portion between second of electrical connection and connection first and second.With the first conduction subelement 213 in Fig. 3 For first conductive beam 2131, first, second and Part III are not 21311,21312 and shown in Fig. 3 21313；By taking the third conductive beam 2231 of the second conduction subelement 223 in Fig. 7 as an example, first, second and Part III It Wei shown in Fig. 7 22311,22312 and 22313.
Wherein, the first temperature sensor 2111 and second temperature Sensitive Apparatus 2211 can be two-terminal element, unite below First temperature sensor 2111 and second temperature Sensitive Apparatus 2211 are referred to as sensitive subelement, and sensitive subelement can be will be warm Degree variation is converted to the functional component of voltage change, such as temperature sensitive diode, field-effect tube, thermocouple, thermoelectric pile；It can be with It is that temperature change is converted to the functional component of the resistance variations of material, such as amorphous silicon, vanadium oxide, titanium oxide；Can be will Temperature change is converted to the charge variation of material, such as lead zirconate titanate, pyroelectricity material.
When sensitive subelement is temperature sensitive diode, temperature sensitive diode is pn-junction type diode, can be pn Knot, np knot are also possible to two-in-one npn knot and pnp knot；Diode can be silicon diode, germanium diode, two pole of polysilicon Pipe；Diode can be one, be also possible to the series connection of multiple same kinds or different types.
The both ends of first temperature sensor 2111 are electrically connected with the first conductive beam 2131 and the second conductive beam 2132 respectively, It is electrically conductive material, example that first temperature, which absorbs the second bonded layer 300 between subelement 211 and readout circuit chip 100, Such as metal, so that the electric signal of the first temperature sensor 2111 output can be conducted by the first conductive beam 2131, second Beam 2132, the first metal pad 214 and the conduction of the second bonded layer 300 to readout circuit chip 100 and are stored in storage chip 400 In.
The both ends of second temperature Sensitive Apparatus 2211 are electrically connected with third conductive beam 2231 and the 4th conductive beam 2232 respectively, It is electrically conductive material, example that second temperature, which absorbs the second bonded layer 300 between subelement 221 and readout circuit chip 100, Such as metal, so that the electric signal that second temperature Sensitive Apparatus 2211 exports can be conducted by third conductive beam the 2231, the 4th Beam 2232 and the conduction of the second bonded layer 300 to readout circuit chip 100 and are stored in storage chip 400.
On the basis of above scheme, with reference to Fig. 3, optionally, the first conduction subelement 213 be can be set in the first temperature It absorbs between subelement 211, specifically, the first conductive beam 2131 and the second conductive beam 2132 of the first conduction subelement 213 can To be arranged between the first temperature sensor 2111 and the first reflecting layer 2113, the first conductive beam 2131 and the second conductive beam 2132 first the first temperature sensor 2111 of electrical connection, second of the first conductive beam 2131 and the second conductive beam 2132 Readout circuit chip 100 is electrically connected by the first reflecting layer 2113 and the second bonded layer 300.
Fig. 9 is the structural schematic diagram of another sensing pixels unit provided in an embodiment of the present invention, in the base of above scheme On plinth, with reference to Fig. 9, optionally, the first conduction subelement 213 may be set to be part and absorb subelement 211 with the first temperature Same layer.First and the first temperature sensor of third portion electrical connection of the first conductive beam 2131 and the second conductive beam 2132 2111, second of the first conductive beam 2131 and the second conductive beam 2132 passes through the first reflecting layer 2113 and the second bonded layer 300 It is electrically connected readout circuit chip 100.
Figure 10 is the structural schematic diagram of another sensing pixels unit provided in an embodiment of the present invention, in the base of above scheme On plinth, with reference to Figure 10, optionally, the first conduction subelement 213 can pass through the of fourth bond layer 800 and sensing pixels unit One metal pad, specifically, one end of the first conductive beam 2131 and the second conductive beam 2132 is electrically connected the first temperature sensor 2111, the other end of the first conductive beam 2131 and the second conductive beam 2132 passes through fourth bond layer 800 and readout circuit chip 100 Link specifically can be fourth bond layer 800 and be bonded and be electrically connected with the first metal pad for passing through the first reflecting layer 2113, the One metal pad is bonded with readout circuit chip 100.
Optionally, the first conductive beam 2131, the second conductive beam 2132, third conductive beam 2231 and the 4th conductive beam 2232 packet Include the heat-conduction medium of conducting wire and coated wire.
Specifically, plain conductor can be used for conducting the first temperature sensor 2111 and second temperature Sensitive Apparatus 2211 is defeated Electric signal out, the first temperature can be absorbed subelement 211 by heat-conduction medium and second temperature absorbs subelement 221 in the external world The heat of absorption is conducted to readout circuit chip 100, and readout circuit chip 100 can play the role of heat sink.Optionally, the material of conducting wire Matter can be thermo-sensitive material such as amorphous silicon, amorphous germanium, amorphous germanium silicon, vanadium oxide etc., be also possible to copper, aluminium, tungsten, polysilicon, titanium, Titanium alloy, nickel alloy etc.；The heat-conduction medium of coated wire can be silica, silicon nitride, silicon oxynitride, silicon carbide, amorphous Carbon etc..
Fig. 3, Fig. 5, Fig. 7-10, by each conductive beam be include a folding column structure for schematically illustrated, scheme 11 be a kind of top view of sensing pixels unit provided in an embodiment of the present invention, and schematically conductive beam is more folding knots in Figure 11 The situation of structure.The broken number of each conductive beam, those skilled in the art can voluntarily prepare according to actual needs, and the present invention is not done herein Concrete restriction.
The temperature pattern sensor that any embodiment of that present invention provides, each layer material that is bonded can be metal, metal-oxide Object, organic matter etc., the present invention is not specifically limited herein.
Figure 12 is a kind of flow diagram of the preparation method of temperature pattern sensor provided in an embodiment of the present invention, the temperature The preparation method of degree imaging sensor can be used for preparing temperature pattern sensor provided in an embodiment of the present invention, the temperature pattern The preparation method of sensor includes:
Step S110 provides readout circuit chip, storage chip and the temperature including at least one sensing pixels unit and passes Sense chip, wherein readout circuit chip includes opposite the first face and the second face.
Step S120, readout circuit chip and storage chip are bonded, and storage chip is bonded in readout circuit chip The first face.
Specifically, Figure 13 is the structural schematic diagram after being bonded readout circuit chip 100 and storage chip 400, with reference to figure 13, readout circuit chip 100 and storage chip 400 are bonded by the first bonded layer 500, storage chip 400 passes through the One bonded layer 500 is bonded in the first face of readout circuit chip 100.
Step S130, by after bonding readout circuit chip and storage chip be bonded with temperature sensing chip, temperature Sensing chip is bonded in the second face of readout circuit chip.
Specifically, a kind of temperature that readout circuit chip 100, storage chip 400 and temperature sensing chip 200 obtain after being bonded The structural schematic diagram of degree imaging sensor can refer to Fig. 1, can be by the readout circuit chip 100 and storage chip 400 after bonding It is bonded with temperature sensing chip 200 by the second bonded layer 300, temperature sensing chip 200 passes through 300 key of the second bonded layer It closes in the second face of readout circuit chip 100, wherein the second face can be the front of readout circuit chip 100.
The preparation method of temperature pattern sensor provided in an embodiment of the present invention by storage chip and readout circuit chip into Line unit closes, and temperature sensing chip and readout circuit chip are bonded, the preparation process of temperature pattern sensor is simplified, and drops Low preparation cost realizes the volume production of temperature pattern sensor, and under the premise of guaranteeing the function of temperature pattern sensor, Reduce the area of temperature pattern sensor.
Optionally, based on the above technical solution, the readout circuit chip after it will be bonded and storage chip and temperature After degree sensing chip is bonded, the preparation method of temperature pattern sensor further include:
At least one lens is provided；
In side of the sensing pixels unit far from readout circuit chip, lens are bonded with readout circuit chip；Or Person is bonded in side of the sensing pixels unit far from readout circuit chip, by lens with storage chip.
Specifically, the temperature pattern sensor that bonding lens 600 obtain can refer to Fig. 2, it is separate in sensing pixels unit 210 Lens 600 are bonded by the side of readout circuit chip 100 with readout circuit chip 100；Or in sensing pixels unit Lens 600 are bonded by 210 sides far from readout circuit chip 100 with storage chip 400.
Wherein, each lens 600 at least cover a sensing pixels unit 210.
Fig. 2 schematically illustrates lens 600 and covers 9 sensing pixels units 210, by lens 600 and reading circuit core The case where piece 100 is bonded by the second bonded layer 300 and four third bond layers 700.It, can also be in sensing picture when practical application Lens 600 are bonded, third bond layer by plain side of the unit 210 far from readout circuit chip 100 with storage chip 400 700 shape can be two or more column structures, can be located at any symmetric position at 210 edge of sensing pixels unit, It is not in contact with temperature sensing chip 200, a lens can be provided for temperature pattern sensor, can also be provided multiple Mirror corresponds to the case where each sensing pixels unit 210 is correspondingly arranged a lens.
Figure 14 is a kind of flow diagram of the preparation method of temperature sensor chip provided in an embodiment of the present invention, the temperature The preparation method of degree sensor chip can be used for preparing the biography of the temperature in temperature pattern sensor provided in an embodiment of the present invention Sensor chip, Figure 15-Figure 19 are that the structure in step each in formation temperature sensor chip provided in an embodiment of the present invention is shown It is intended to, with reference to Figure 14, optionally, based on the above technical solution, provides the temperature including at least one sensing pixels unit Spend sensor chip, comprising:
Step S210 provides silicon base 216 referring to Figure 15.
Step S220, continues to refer to figure 15, deposits thermo-sensitive material and graphical in the side of silicon base 216, is formed at least One the first temperature sensor 2111.
Wherein, thermo-sensitive material can be amorphous silicon, amorphous germanium, amorphous germanium silicon, vanadium oxide etc. and vary with temperature resistance variations Apparent material, the first temperature sensor 2111 can be only made of thermo-sensitive material, can also be by thermo-sensitive material and medium material Material composition；Thermo-sensitive material can be in complete square structure, be also possible to the irregular structure of different pattern formation；Thermo-sensitive material Can be in dielectric material, it can also be above or below dielectric material.
Step S230, continues to refer to figure 15, the first temperature sensor 2111 far from silicon base 216 side formed with First conduction subelement 213 of the first temperature sensor 2111 electrical connection.
Specifically, the first conduction subelement 213 may include the first conductive beam 2131 and the second conductive beam with reference to Figure 15 2132。
Step S240 conducts side deposition of reflective layer material of the subelement far from silicon base first.
Specifically, side deposition of reflective layer material of the subelement 213 far from silicon base 216 is conducted first with reference to Figure 15, After planarization process, the first reflecting layer 2113 is formed, wherein the first reflecting layer 2113 is connect with the first conduction subelement 213, the The spacing of one reflecting layer 2113 and the first temperature sensor 2111 is the first reflecting layer at a distance from a quarter absorbing wavelength 2113 and first temperature sensor 2111 constitute heat superabsorbent function.
Step S250, graphical reflector material, to form the first groove of perforation reflector material, the exposure of the first groove First conduction subelement.
Specifically, with reference to Figure 16, graphical reflector material, to form the first groove 218 of perforation reflector material, the One groove 218 exposure the first conduction subelement 213.
Step S260 deposits insulating medium layer in side of the reflector material far from silicon base and the first groove, so that the One recess sidewall coats dielectric.
Specifically, with reference to Figure 17, in side of the reflector material far from silicon base 216 and the deposition insulation of the first groove 218 Dielectric layer 215, so that 218 side wall of the first groove coats dielectric, wherein dielectric can be silica, silicon nitride, nitrogen Silica, silicon carbide, amorphous carbon etc..
Step S270 etches the insulating medium layer in the first groove on the first conduction subelement.
Specifically, etching the insulating medium layer in the first groove 218 on first conduction subelement 213 with reference to Figure 17-18 215, so that the first groove 218 exposure the first conduction subelement 213.
Step S280, the deposited metal material in the first groove, with reflecting layer far from the first temperature sensor one Side forms metal pad.
Specifically, with reference to Figure 18 and Figure 19, the deposited metal material in the first groove 218, in the first reflecting layer 2113 Side far from the first temperature sensor 2111 forms the first metal pad 214, so that the first metal pad 214 and first passes Guide unit 213 is in contact.
Optionally, based on the above technical solution, by the readout circuit chip and storage chip and temperature after bonding Sensing chip is bonded, comprising:
By after bonding readout circuit chip and storage chip be bonded with the metal pad of temperature sensing chip；
Figure 20 is the readout circuit chip by after bonding and storage chip provided in an embodiment of the present invention and temperature sensing The metal pad of chip be bonded after structural schematic diagram, with reference to Figure 20, specifically, the first of temperature sensing chip 200 passes Guide unit 213 will be warm by the first metal pad 214 and the second bonded layer 300 being electrically connected with the first metal pad 214 The electric signal of degree situation of change is conducted to readout circuit chip 100, and then is stored in storage chip 400, is realized to temperature Measurement.
In side of the sensing pixels unit far from readout circuit chip, lens are bonded with readout circuit chip；Or Person is in side of the sensing pixels unit far from readout circuit chip, before lens are bonded with storage chip, further includes:
Reduction processing is carried out to the silicon base of temperature sensing chip.
Figure 21 is that the structure after the silicon base progress reduction processing provided in an embodiment of the present invention to temperature sensing chip is shown It is intended to, with reference to Figure 21, specifically, the silicon base 216 to temperature sensing chip 200 carries out reduction processing, such as CIS can be based on (cmos image sensor) bonding and wafer thinning technique platform carries out reduction processing to silicon base 216, and then guarantees that temperature pattern passes The slimming of sensor.
Optionally, based on the above technical solution, thermo-sensitive material and graphical, formation are deposited in the side of silicon base At least one first temperature sensor is included in the sub- dielectric layer of deposited on silicon substrates first；In first medium layer far from silicon substrate The side deposition thermo-sensitive material at bottom is simultaneously graphical, forms at least one first temperature sensor.
Specifically, Figure 22 is a kind of knot of temperature sensing chip including the first sub- dielectric layer provided in an embodiment of the present invention Structure schematic diagram when forming the temperature sensing chip, can deposit the first sub- dielectric layer with reference to Figure 22 first in silicon base 216 21121, then thermo-sensitive material and graphical, formation at least one are deposited far from the side of silicon base 216 in first medium layer 21121 A first temperature sensor 2111.
Optionally, thermo-sensitive material and graphical is deposited in the side of silicon base, forms at least one first temperature sensing device It, can shape by this method including depositing the first sub- dielectric layer far from the side of silicon base in the first temperature sensor after part It is located at temperature sensing chip of the first sub- dielectric layer far from reflecting layer side at the first temperature sensor.
Optionally, on a silicon substrate before the first sub- dielectric layer of deposition, comprising: in the side deposit absorbent metal of silicon base Layer is simultaneously graphical, with the sensing pixels unit of metamaterial structure.
Optionally, on a silicon substrate after the first sub- dielectric layer of deposition, comprising: in the first sub- dielectric layer far from silicon base Side deposit absorbent metal layer is simultaneously graphical, so that the metal array for absorbing metal layer arranges and surrounds the sensitive member of the first temperature Part can also form the sensing pixels unit of metamaterial structure.
Optionally, after the first temperature sensor deposits the first sub- dielectric layer far from the side of silicon base, further includes: In side deposit absorbent metal layer of the first sub- dielectric layer far from silicon base and graphical, so as to absorb the metal array of metal layer It arranges and surrounds the first temperature-sensing element (device), the sensing pixels unit of metamaterial structure can also be formed.
Optionally, before the first temperature sensor deposits the first sub- dielectric layer far from the side of silicon base, comprising: The side of silicon base is in deposit absorbent metal layer and graphical, so that the metal array for absorbing metal layer arrange and to surround first warm Sensing element is spent, the sensing pixels unit of metamaterial structure can also be formed.
Optionally, based on the above technical solution, graphical reflector material, further includes:
Step S251 etches the reflector material of the first temperature sensor of covering part.
Specifically, temperature pattern sensor may also include reference pixel unit, wherein reference pixel unit can not include Reflecting layer, therefore the reflector material formed at reference pixel cell position is etched away, it is external to reduce reference pixel unit The absorption of boundary's radiation.
Optionally, based on the above technical solution, Figure 23-Figure 26 is that formation first provided in an embodiment of the present invention passes The partial structure diagram of temperature sensing chip in guide unit process, it is remote in the first temperature sensor with reference to Figure 23-Figure 26 Side from silicon base forms the first conduction subelement being electrically connected with the first temperature sensor, comprising:
The first sacrificial layer, graphical first sacrificial layer, shape are deposited far from the side of silicon base in the first temperature sensor Run through the second groove of the first sacrificial layer at part, and what is be connected with the second groove through the first sacrificial layer be not penetrated the The third groove of one sacrificial layer.
Specifically, being sacrificed in the first temperature sensor 2111 far from the side deposition first of silicon base 216 with reference to Figure 23 Layer 2171, graphical first sacrificial layer 2171 form the second groove 21711, Yi Jiyu that the first sacrificial layer 2171 is run through in part The third groove 21712 for being not penetrated the first sacrificial layer 2171 being connected through the second groove 21711 of the first sacrificial layer 2171.
Electric signal conductive material is deposited in the second groove and third groove, forms the of the first temperature sensor of connection First and third portion of one conduction subelement.
Specifically, depositing electric signal with reference to Figure 23-24 in the second groove 21711 and third groove 21712 and conducting material Material forms first of the first conductive beam 2131 of the first conduction subelement 213 of the first temperature sensor 2111 of connection 21311 and third portion 21312 or first 21312 and third portion 21322 of the second conductive beam 2132.
The side deposition far from silicon base the in the first conduction first of subelement and third portion and the first sacrificial layer Two sacrificial layers, graphical second sacrificial layer form the 4th groove of the second sacrificial layer of perforation, the 4th groove exposure the first conduction The third portion of unit.
Specifically, with reference to Figure 25, first 21311 and third of the first conductive beam 2131 of the first conduction subelement 213 First 21312 of portion 21312 or the second conductive beam 2132 and third portion 21322 and the first sacrificial layer 2171 are far from silicon substrate The side depositing second sacrificial layer 2172 at bottom 216, graphical second sacrificial layer 2172 form the of the second sacrificial layer 2172 of perforation Four grooves 21721, the 4th groove 21721 exposure first conduction subelement 213 the first conductive beam 2131 third portion 21312 or The third portion 21322 of second conductive beam 2132.
Electric signal conductive material is deposited in the 4th groove, the electric signal conductive material in the 4th groove forms first and passes Second of guide unit.
Specifically, electric signal conductive material is deposited in the 4th groove 21721, in the 4th groove with reference to Figure 25-26 21721 electric signal conductive material forms second 21313 of the first conductive beam 2131 of the first conduction subelement 213 or the Second 21323 of two conductive beams 2132.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation, It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above embodiments to the present invention It is described in further detail, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, also It may include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.

Claims (10)

1. a kind of temperature pattern sensor characterized by comprising readout circuit chip, storage chip and including at least one The temperature sensing chip of a sensing pixels unit；The readout circuit chip includes opposite the first face and the second face；
The storage chip is bonded in the first face of the readout circuit chip, the temperature sensing chip by the first bonded layer The second face of the readout circuit chip is bonded in by the second bonded layer.
2. temperature pattern sensor according to claim 1, which is characterized in that it further include at least one lens, it is described Mirror is set to the side of the sensing pixels unit far from the readout circuit chip, and the lens cover the temperature sensing core Piece, each lens at least cover the sensing pixels unit, the lens and the readout circuit chip or described Storage chip is bonded by third bond layer.
3. temperature pattern sensor according to claim 1, which is characterized in that each sensing pixels unit includes the One temperature absorbs subelement and the first conduction subelement, first temperature absorb subelement include the first temperature sensor, First medium layer between first reflecting layer and first temperature sensor and first reflecting layer, wherein described One reflecting layer is between first temperature sensor and the readout circuit chip；
One end of the first conduction subelement is electrically connected with first temperature sensor, the first conduction subelement The other end is electrically connected by second bonded layer with the readout circuit chip；
First reflecting layer includes the first metal pad, and first metal welding close to the side of the readout circuit chip Disk is electrically connected through first reflecting layer with the first conduction subelement, and first metal pad passes through second key Layer is closed to be electrically connected with the readout circuit chip；Wherein, the temperature pattern sensor runs through institute in first metal pad The part for stating the first reflecting layer includes the first insulating medium layer for coating first metal pad.
4. temperature pattern sensor according to claim 3, which is characterized in that the temperature sensing chip further includes reference Pixel unit, each reference pixel unit include second temperature absorb subelement and second conduction subelement, described second It includes second temperature Sensitive Apparatus and the second temperature Sensitive Apparatus and the readout circuit chip that temperature, which absorbs subelement, Between second dielectric layer；
One end of the second conduction subelement is electrically connected with the second temperature Sensitive Apparatus, the second conduction subelement The other end is electrically connected by second bonded layer with the readout circuit chip；
The thermal absorptivity that the second temperature absorbs subelement is less than the thermal absorptivity that first temperature absorbs subelement.
5. temperature pattern sensor according to claim 4, which is characterized in that first temperature sensor includes the One end and second end, the first conduction subelement include at least the be electrically connected with the first temperature sensor first end One conductive beam and the second conductive beam being electrically connected with the first temperature sensor second end, first conductive beam and described Second conductive beam is electrically connected by second bonded layer with the readout circuit chip；
The second temperature Sensitive Apparatus includes third end and the 4th end, and the second conduction subelement includes at least and the second temperature The degree Sensitive Apparatus third end third conductive beam being electrically connected and the be electrically connected with the 4th end of second temperature Sensitive Apparatus the 4th Conductive beam, the third conductive beam and the 4th conductive beam are electrically connected by second bonded layer with the readout circuit chip It connects；
Wherein, first conductive beam, second conductive beam, the third conductive beam and the 4th conductive beam be include to The strip or column structure of a few folding；
First conductive beam, second conductive beam, the third conductive beam and the 4th conductive beam include directly and institute It states first of the first temperature sensor or the electrical connection of second temperature Sensitive Apparatus, be directly electrically connected with the readout circuit chip Connect second and connection it is described first and it is second described between third portion.
6. a kind of preparation method of temperature pattern sensor characterized by comprising
Readout circuit chip, storage chip and the temperature sensing chip including at least one sensing pixels unit are provided, wherein institute Stating readout circuit chip includes opposite the first face and the second face；
The readout circuit chip and the storage chip are bonded, the storage chip is bonded in the reading circuit core First face of piece；
By after bonding the readout circuit chip and storage chip be bonded with the temperature sensing chip, the temperature passes Sense chip is bonded in the second face of the readout circuit chip.
7. the preparation method of temperature pattern sensor according to claim 6, which is characterized in that it is described by bonding after After the readout circuit chip and storage chip are bonded with the temperature sensing chip, further includes:
At least one lens is provided；
In the side of the sensing pixels unit far from the readout circuit chip, by the lens and the readout circuit chip It is bonded；Or in the side of the sensing pixels unit far from the readout circuit chip, the lens are deposited with described Storage chip is bonded；
Wherein, each lens at least cover the sensing pixels unit.
8. the preparation method of temperature pattern sensor according to claim 7, which is characterized in that described provide includes at least The temperature sensor chip of one sensing pixels unit, comprising:
Silicon base is provided；
Thermo-sensitive material and graphical is deposited in the side of the silicon base, forms at least one first temperature sensor；
It is formed in first temperature sensor far from the side of the silicon base and is electrically connected with first temperature sensor The the first conduction subelement connect；
In the first conduction side deposition of reflective layer material of the subelement far from the silicon base；
The graphical reflector material, to form the first groove for penetrating through the reflector material, the first groove exposure The first conduction subelement；
Insulating medium layer is deposited in side of the reflector material far from the silicon base and first groove, so that described First recess sidewall coats dielectric；
Etch the insulating medium layer in first groove on the first conduction subelement；
The deposited metal material in first groove, in side of the reflecting layer far from first temperature sensor Form metal pad.
9. the preparation method of temperature pattern sensor according to claim 8, which is characterized in that the institute by after bonding Readout circuit chip and storage chip is stated to be bonded with the temperature sensing chip, comprising:
The metal pad of the readout circuit chip and storage chip and the temperature sensing chip after bonding is carried out Bonding；
In the side of the sensing pixels unit far from the readout circuit chip, by the lens and the readout circuit chip It is bonded；Or in the side of the sensing pixels unit far from the readout circuit chip, the lens are deposited with described Before storage chip is bonded, further includes:
Reduction processing is carried out to the silicon base of the temperature sensing chip.
10. the preparation method of temperature pattern sensor according to claim 8, which is characterized in that described described first Temperature sensor forms the first conduction being electrically connected with first temperature sensor far from the side of the silicon base Unit, comprising:
The first sacrificial layer is deposited far from the side of the silicon base in first temperature sensor, graphical described first is sacrificial Domestic animal layer, formed part run through first sacrificial layer the second groove, and with run through first sacrificial layer the second groove What is be connected is not penetrated the third groove of first sacrificial layer；
Electric signal conductive material is deposited in second groove and the third groove, is formed and is connected the first temperature sensitivity First and third portion of the first conduction subelement of device, wherein described first directly connects with the temperature sensor It connects；
First conduction first of subelement and third portion and first sacrificial layer far from the silicon base one Side depositing second sacrificial layer, graphical second sacrificial layer form the 4th groove for penetrating through second sacrificial layer, and described the The third portion of four grooves exposure the first conduction subelement；
The electric signal conductive material is deposited in the 4th groove, the electric signal in the 4th groove conducts material Material forms second of the first conduction subelement.
CN201910697080.3A 2019-07-30 2019-07-30 A kind of temperature pattern sensor and preparation method thereof Pending CN110349946A (en)

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