CN112820729A - Bidirectional-conduction high-voltage high-performance programmable semiconductor anti-surge protection device - Google Patents
Bidirectional-conduction high-voltage high-performance programmable semiconductor anti-surge protection device Download PDFInfo
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- CN112820729A CN112820729A CN202110253966.6A CN202110253966A CN112820729A CN 112820729 A CN112820729 A CN 112820729A CN 202110253966 A CN202110253966 A CN 202110253966A CN 112820729 A CN112820729 A CN 112820729A
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- diode
- thyristor
- protection device
- surge protection
- chip
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 6
- IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical compound [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 7
- 230000002441 reversible effect Effects 0.000 abstract description 5
- 238000004891 communication Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
The invention discloses a bidirectional-conduction high-voltage high-performance programmable semiconductor anti-surge protection device, which comprises a chip arranged on a base island, wherein the chip is connected with an external frame of the base island through a bonding wire+In the invention, cathode short-circuit points are uniformly distributed on the thyristor, and a gate hole is arranged at P+And the anti-surge capacity is enhanced, the reverse breakdown voltage is improved, and the performance of the device is enhanced.
Description
Technical Field
The invention relates to an anti-surge protection device, in particular to a semiconductor anti-surge protection device.
Background
With the rapid development of communication technology, the information transmission speed is increased, and the requirement on the stability of a communication system is higher and higher. The performance of the whole system is reduced by the frequent unexpected voltage transient and surge current, so that the system malfunctions and even is damaged. Therefore, in order to improve the reliability of the system, it is necessary to take a countermeasure against voltage transients and surges, so that the performance of the protection device becomes important. The device is a bidirectional-conduction programmable semiconductor anti-surge protection device, and is widely applied to anti-surge protection of communication equipment due to high corresponding speed, small volume, stable performance, strong short-circuit protection and unit area surge absorption capacity. In addition, the device series products have various structures and function diversity, so the device series products can be widely applied to the technical field of power electronics and the protection of various electronic systems.
Disclosure of Invention
The invention aims to provide a bidirectional-conduction high-voltage high-performance programmable semiconductor anti-surge protection device, which enhances the anti-surge capacity and improves the reverse breakdown voltage.
The purpose of the invention is realized as follows: the utility model provides a two-way conducting's high pressure high performance semiconductor surge protection device able to programme, is including setting up the chip on the island, and the chip passes through the bonding wire with island external frame and links to each other, its characterized in that, the chip is including thyristor, triode and the diode that sets up in pairs, thyristor, triode, diode all are provided with a pair ofly, and the symmetry is provided with the substrate, and the diode links together, and is located the middle part of substrate, and two thyristors and two diode symmetry set up in two sides at the diode, the thyristor adopts evenly distributed negative pole short circuit point to set up the gate pole hole at P+And the gate pole of the thyristor is connected with the emitting electrode of the triode through an aluminum lead wire.
Compared with the prior art, the invention has the beneficial effects that: the invention distributes cathode short-circuit points uniformly and arranges a gate pole in the adoption of the thyristorThe hole is arranged at P+On the area, the effective cathode area is increased, and the surge peak current capacity value is increased, so that the anti-surge capacity is enhanced; meanwhile, the symmetrical layout is adopted, so that the complexity of the process can be reduced, and the mutual influence among all the diffusions can be reduced.
In order to further ensure the surge prevention capability, the cathode short-circuit points are a plurality of truncated cones reserved after photoetching.
As a further improvement of the invention, arc-shaped structures are processed at two ends of the emitting electrode of the triode. The arc structure increases the radius of curvature of the triode junction, thereby improving the reverse breakdown voltage.
As a further improvement of the invention, the area of the diode is 90-95% of the area of the thyristor. The diode has the functions of inhibiting forward surge pulse, releasing forward surge current and preventing forward surge from entering a protected system so as not to be damaged, so that the surge prevention capability of the diode is mainly considered in the planar design, and the thyristor is equivalent to a p-i-n diode after being conducted, so that the surge prevention capability is ensured by designing the area of the diode to be smaller than the area of the thyristor.
Drawings
FIG. 1 is a schematic view of the structure of the present invention.
FIG. 2 is a layout diagram of a chip according to the present invention.
The chip comprises a chip 1, a thyristor 11, a cathode short-circuit point 11a, a gate 11b, a triode 12, an emitter 12a, a diode 13, an aluminum lead 14, a base island 2, a frame 3 and a bonding wire 4.
Detailed Description
The bidirectional-conduction high-voltage high-performance programmable semiconductor anti-surge protection device comprises a chip 1 arranged on a base island 2, wherein the chip 1 is connected with an external frame 3 of the base island 2 through a bonding wire 4, the chip 1 comprises a pair of thyristors 11, triodes 12 and diodes 13, the thyristors 11, the triodes 12 and the diodes 13 are all arranged in pairs and are symmetrically arranged on a substrate, the triodes 12 are connected together and are positioned in the middle of the substrate, the thyristors 11 and the diodes 13 are symmetrically arranged on the triodes 1, and the diodes 13 are symmetrically arranged on the substrate2, the thyristor 11 adopts a cathode short-circuit point 11a which is evenly distributed, and a gate 11b hole is arranged at P+In the region, the cathode short-circuit points 11a are a plurality of truncated cones reserved after photoetching, the gate 11b of the thyristor 11 is connected with the emitter 12a of the triode 12 through an aluminum lead 14, arc-shaped structures are processed at two ends of the emitter 12a of the triode 12, and the area of the diode 13 is 90-95% of the area of the thyristor 11.
The invention adopts the thyristor 11 to uniformly distribute the cathode short-circuit points 11a and open the gate pole hole at P+On the area, the effective cathode area is increased, and the surge peak current capacity value is increased, so that the anti-surge capacity is enhanced; meanwhile, the symmetrical layout is adopted, so that the complexity of the process can be reduced, and the mutual influence among all the diffusions can be reduced; when the plane structure of the triode 12 is designed, firstly, the maximum current meeting the working condition of a device is considered, and meanwhile, the requirement of a transistor on reverse breakdown voltage is also considered, in addition, the curvature radius of a junction has obvious influence on the breakdown voltage, and when the junction is reversely biased, a local electric field is increased along with the reduction of the curvature radius, so that the breakdown voltage is reduced; therefore, an emission region field plate structure is adopted, and a space charge region on the surface of the semiconductor is widened, so that the curvature radius of a PN junction is increased, and the reverse breakdown voltage is improved; the diode 13 has the functions of inhibiting forward surge pulse, releasing forward surge current and preventing forward surge from entering a protected system so as not to be damaged in a protection device; therefore, in the planar design, the anti-surge capability of the diode 13 is considered, and since the thyristor 11 is equivalent to a p-i-n diode 13 after being turned on, when the area of the diode 13 is designed, the effective area of the cathode of the thyristor is designed to be slightly smaller than that of the cathode of the thyristor 11, so as to further ensure the anti-surge capability.
The present invention is not limited to the above-mentioned embodiments, and based on the technical solutions disclosed in the present invention, those skilled in the art can make some substitutions and modifications to some technical features without creative efforts according to the disclosed technical contents, and these substitutions and modifications are all within the protection scope of the present invention.
Claims (4)
1. The utility model provides a two-way conducting's high pressure high performance semiconductor surge protection device able to programme, is including setting up the chip on the island, and the chip passes through the bonding wire with island external frame and links to each other, its characterized in that, the chip is including thyristor, triode and the diode that sets up in pairs, thyristor, triode, diode all are provided with a pair ofly, and the symmetry is provided with the substrate, and the diode links together, and is located the middle part of substrate, and two thyristors and two diode symmetry set up in two sides at the diode, the thyristor adopts evenly distributed negative pole short circuit point to set up the gate pole hole at P+And the gate pole of the thyristor is connected with the emitting electrode of the triode through an aluminum lead wire.
2. The bidirectionally-conductive high-voltage high-performance programmable semiconductor anti-surge protection device according to claim 1, wherein said cathode shorting point is a plurality of truncated cones remaining after photolithography.
3. The bi-directionally conducting high voltage high performance programmable semiconductor anti-surge protection device of claim 1, wherein an arc structure is formed across the emitter of said transistor.
4. The bi-directionally conducting high voltage high performance programmable semiconductor anti-surge protection device of claim 1, wherein the area of the diode is 90-95% of the area of the thyristor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110253966.6A CN112820729A (en) | 2021-03-09 | 2021-03-09 | Bidirectional-conduction high-voltage high-performance programmable semiconductor anti-surge protection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110253966.6A CN112820729A (en) | 2021-03-09 | 2021-03-09 | Bidirectional-conduction high-voltage high-performance programmable semiconductor anti-surge protection device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112820729A true CN112820729A (en) | 2021-05-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110253966.6A Pending CN112820729A (en) | 2021-03-09 | 2021-03-09 | Bidirectional-conduction high-voltage high-performance programmable semiconductor anti-surge protection device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112820729A (en) |
-
2021
- 2021-03-09 CN CN202110253966.6A patent/CN112820729A/en active Pending
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