CN111599859B - Thyristor with overvoltage protection function and manufacturing method - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims abstract description 57
- 239000002184 metal Substances 0.000 claims abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 7
- 230000001960 triggered effect Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 208000025274 Lightning injury Diseases 0.000 description 1
- VMXJCRHCUWKQCB-UHFFFAOYSA-N NPNP Chemical compound NPNP VMXJCRHCUWKQCB-UHFFFAOYSA-N 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
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Abstract
The invention discloses a thyristor with overvoltage protection function and a manufacturing method, wherein the thyristor comprises: a first conductive layer made of a first conductive type semiconductor material, a substrate layer made of a second conductive type semiconductor material, and a second conductive layer made of the first conductive type semiconductor material, which are sequentially provided; an anode metal electrode disposed on a side of the first conductive layer remote from the substrate layer; emitter regions of a second conductivity type semiconductor material disposed at intervals within the second conductive layer; the substrate layer extends towards the direction of the second conductive layer to divide the second conductive layer into two second conductive areas, and the emitter areas are arranged in the two second conductive areas; both second conductive regions comprise a base and an extension along the base extending towards the other second conductive region. The invention has simple structure and can protect the IGBT module from being damaged by overvoltage after being connected with the IGBT module in parallel.
Description
Technical Field
The invention belongs to the technical field of electronic devices, and particularly relates to a thyristor with an overvoltage protection function and a manufacturing method thereof.
Background
The IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor device compounded by a MOS (field effect transistor) and a bipolar transistor, has the advantages of low driving power, low on-voltage, low switching loss, high current density and the like, and is widely applied to the fields of rail transit and industrial transmission. However, in practical application, the core converter device IGBT module in the circuit is sensitive to overvoltage, and is easily damaged if a protection measure is lacking or improper use is performed. For example, in the turn-off process of the IGBT module, because the collector current of the IGBT module drops rapidly, a high spike overvoltage is often generated between the collector and the emitter of the IGBT under the action of the stray inductance and the load inductance of the circuit; or in the application of high-voltage circuits such as flexible direct current transmission and the like, peak overvoltage is generated due to system errors or lightning stroke factors, and the IGBT is extremely easy to break down, so that the device is damaged, and the normal operation of the system is influenced.
To avoid damaging the IGBT by spike overvoltage, the main current practice includes:
1) The stray inductance in the loop is reduced on the design level, and the method needs to optimize the internal structure of the IGBT module, reduce the parasitic inductance, optimize the main circuit structure and reduce the stray inductance. Although it can relieve the pressure of overvoltage on the IGBT module, its effect is limited.
2) While reducing return circuit stray inductance, design external protection circuit for IGBT module on the circuit level, for example, external protection circuit includes TVS (transient voltage suppression diode), resistance, electric capacity and inductance etc. monitors the collector voltage of IGBT, and when the collector voltage of IGBT exceeds the predetermined value, the TVS transmits the overvoltage signal to drive control circuit, lifts IGBT gate potential trigger IGBT in order to restrain the rising of IGBT collector voltage. The protection circuit adopted by the method is realized by a plurality of electronic elements, and the structure is complex; in high-voltage circuit applications such as flexible direct current transmission, the protection method has serious defects that energy generated by overvoltage needs to be released through the IGBT module, and the IGBT module is likely to be overheated and damaged.
Therefore, how to realize an electronic device with an overvoltage protection function, so as to protect an IGBT when the collector voltage of the IGBT reaches a predetermined value, is a technical problem to be solved.
Disclosure of Invention
One of the technical problems to be solved by the invention is how to realize an electronic device with simple structure and overvoltage protection function so as to protect an IGBT when the collector voltage of the IGBT reaches a preset value.
In order to solve the above technical problems, an embodiment of the present application firstly provides a thyristor with an overvoltage protection function, including: a first conductive layer made of a first conductive type semiconductor material, a substrate layer made of a second conductive type semiconductor material, and a second conductive layer made of the first conductive type semiconductor material, which are sequentially provided; an anode metal electrode provided on a side of the first conductive layer remote from the substrate layer; emitter regions of a second conductivity type semiconductor material disposed at intervals within the second conductive layer; the floating metal electrode and the cathode metal electrode are respectively arranged on the second conductive layer and correspond to the emitter region, wherein the substrate layer extends towards the direction of the second conductive layer to divide the second conductive layer into two second conductive regions, and the emitter region is arranged in each of the two second conductive regions; both of the second conductive regions include a base portion and an extension portion extending along the base portion toward the other of the second conductive regions.
Preferably, the shapes of the two second conductive regions are the same.
Preferably, the distance of the extension portion (i.e., the thickness of the extension portion) in the direction from the second conductive layer to the anode metal electrode is 800 μm to 1000 μm, and the distance of the extension portion (i.e., the length of the extension portion) extending from the base portion is 70 μm to 120 μm.
Preferably, the distance between two said extensions is 50 μm to 220 μm.
Preferably, the thyristor further comprises an oxide layer on a side of the two extensions remote from the substrate layer.
Preferably, the material of the oxide layer is silicon dioxide.
Preferably, the concentration of the semiconductor material of the first conductivity type constituting the extension is higher than the concentration of the semiconductor material of the first conductivity type constituting the base.
Preferably, the concentration of the semiconductor material of the first conductivity type constituting the extension is 10 18 To 10 20 cm -3 。
The embodiment of the invention also discloses a method for manufacturing the thyristor with the overvoltage protection function, which comprises the following steps:
doping the first conductive type semiconductor material on opposite sides of the substrate layer made of the second conductive type semiconductor material to form a first conductive layer and a second conductive layer, respectively;
etching a central region of the second conductive layer to expose the central region of the substrate layer, thereby forming two separated second conductive regions, and pushing the two second conductive regions toward the substrate layer;
doping a second conductivity type semiconductor material in the two second conductivity regions at a surface remote from the substrate layer to form spaced emitter regions;
doping of a first conductivity type semiconductor material in the two second conductivity regions away from the surface of the substrate layer to form an extension at the base of the second conductivity region towards the other second conductivity region, wherein doping of the first conductivity type semiconductor material is also performed around the emitter region on the surface of the two second conductivity regions away from the substrate layer;
an anode metal electrode is arranged on one surface of the first conductive layer away from the substrate layer;
and floating metal electrodes and cathode metal electrodes are respectively arranged on one surfaces, far away from the substrate layers, of the two second conductive areas, corresponding to the emitter areas.
Preferably, the method further comprises:
an oxide layer is disposed on a side of the second conductive layer remote from the substrate layer corresponding to the central region.
One or more embodiments of the above-described solution may have the following advantages or benefits compared to the prior art:
when the thyristor with the overvoltage protection function is in a forward blocking state, forward leakage current can be generated inside the thyristor, and the forward leakage current increases along with the increase of the forward blocking voltage of the thyristor. When the thyristor forward blocking voltage reaches a predetermined value, the forward leakage current increases to a trigger current to trigger the thyristor. Therefore, the thyristor can be triggered to turn on without an external gate driving circuit. Furthermore, the thyristor does not need to additionally lead out a gate metal electrode from the second conductive layer, and is easy to prepare in practice.
The thyristor is used for protecting the IGBT module when the thyristor is used in parallel with the IGBT module, and when the collector voltage of the IGBT module (namely the voltage of the anode metal electrode of the thyristor) reaches a preset value, the thyristor can be triggered to be turned on without an external trigger signal, so that the collector voltage of the IGBT module is rapidly reduced, and the IGBT module is protected from being damaged by system overvoltage. And the thyristor is used as a main circuit current channel after being opened, so that energy generated by overvoltage of the system can be further released.
The thyristor is adopted to protect the IGBT module, no extra electronic components or external trigger circuits are needed, and the complexity of a protection system is reduced.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the technical aspects or prior art of the present application and constitute a part of this specification. The drawings, which are used to illustrate the technical solution of the present application, together with the embodiments of the present application, but do not limit the technical solution of the present application.
Fig. 1 is a schematic diagram of a system structure in which a thyristor having an overvoltage protection function is connected in parallel with an IGBT module according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a thyristor with overvoltage protection function according to an embodiment of the invention;
fig. 3 is a graph of the distance between two extensions of a thyristor with overvoltage protection function versus the forward breakover voltage according to an embodiment of the invention;
fig. 4 is a flow chart of a method of manufacturing a thyristor with overvoltage protection function according to an embodiment of the invention;
fig. 5 is a schematic structural diagram of the structure after step S1 in fig. 4;
fig. 6 is a schematic diagram of the structure after step S2 in fig. 4
Fig. 7 is a schematic structural diagram of the structure after step S3 in fig. 4;
fig. 8 is a schematic structural diagram of the structure after step S4 of fig. 4;
fig. 9 is a schematic structural diagram of the structure after step S7 of fig. 4;
fig. 10 is a schematic structural diagram after step S6 in fig. 4.
Detailed Description
The following will describe embodiments of the present invention in detail with reference to the drawings and examples, thereby solving the technical problems by applying technical means to the present invention, and realizing the corresponding technical effects can be fully understood and implemented accordingly. The embodiments and the features in the embodiments can be combined with each other under the condition of no conflict, and the formed technical schemes are all within the protection scope of the invention.
One of the technical problems to be solved by the embodiment of the invention is as follows: how to realize simple structure and the electronic device with overvoltage protection function to protect the IGBT when the collector voltage of the IGBT reaches a preset value. In order to solve the above problems, an embodiment of the present invention provides a thyristor with an overvoltage protection function, which includes: a first conductive layer made of a first conductive type semiconductor material, a substrate layer made of a second conductive type semiconductor material, and a second conductive layer made of the first conductive type semiconductor material, which are sequentially provided; an anode metal electrode provided on a side of the first conductive layer remote from the substrate layer; emitter regions of a second conductivity type semiconductor material disposed at intervals within the second conductive layer; and floating metal electrodes and cathode metal electrodes respectively arranged on the second conductive layer and corresponding to the emitter regions. The substrate layer extends towards the direction of the second conductive layer to divide the second conductive layer into two second conductive areas, and the emitter areas are arranged in the two second conductive areas; both of the second conductive regions include a base portion and an extension portion extending along the base portion toward the other of the second conductive regions.
The thyristor with the overvoltage protection function can realize an NPNP four-layer structure on a substrate layer taking silicon as a substrate, has bidirectional blocking characteristics when not triggered, and has unidirectional conduction characteristics after triggered. When in a forward blocking state, a forward leakage current is generated inside the thyristor, and the forward leakage current increases with the increase of the forward blocking voltage of the thyristor. When the thyristor forward blocking voltage reaches a predetermined value, the forward leakage current increases to a trigger current to trigger the thyristor. Therefore, the thyristor can be triggered to turn on without an external gate driving circuit. Furthermore, the thyristor does not need to additionally lead out a gate metal electrode from the second conductive layer, and is easy to prepare in practice.
As shown in fig. 1, a thyristor with an overvoltage protection function is used in parallel with an IGBT module, and when the collector voltage of the IGBT module (i.e. the voltage of the anode metal electrode of the thyristor) reaches a predetermined value, the thyristor is triggered to turn on, so that the collector voltage of the IGBT module drops rapidly, and the IGBT module is protected from being damaged by the overvoltage of the system. And the thyristor is used as a main circuit current channel after being opened, so that energy generated by overvoltage of the system can be further released.
The invention is further illustrated by the following specific examples.
Fig. 2 shows a thyristor with overvoltage protection function according to an embodiment of the present invention. The thyristor of the embodiment mainly comprises a first conductive layer, a substrate layer, a second conductive layer, an anode metal electrode, an emitter region, a floating metal electrode and a cathode metal electrode.
Specifically, the first conductive layer and the second conductive layer are each made of a first conductivity type semiconductor material, and the substrate layer is made of a second conductivity type semiconductor material. The first conductive layer, the substrate layer and the second conductive layer are sequentially arranged. An anode metal electrode 1 is provided on a side (lower surface shown in fig. 2) of the first conductive layer 2 remote from the substrate layer 3. Emitter regions 5 made of a second conductivity type semiconductor material are provided at intervals within the second conductivity layer. A floating metal electrode 6 and a cathode metal electrode 7 are respectively arranged on the second conductive layer corresponding to the emitter region 5, and referring to fig. 2, the substrate layer 3 extends towards the direction of the second conductive layer to divide the second conductive layer into two second conductive regions 4, and the emitter regions 5 are arranged in the two second conductive regions 4; both second conductive regions 4 comprise a base 8 and an extension 9 extending along the base 8 towards the other second conductive region 4. In this embodiment, the first conductive type semiconductor material is an N-shaped semiconductor material. The second conductivity type semiconductor material is a P-type semiconductor material. Of course, the first conductivity type semiconductor material may be selected as the P-type semiconductor material. The second conductivity type semiconductor material may also be selected as an N-type semiconductor material.
The forward leakage current generated inside the thyristor is used as the trigger current, wherein one path of the trigger current is along the substrate layer 3, the extension part 9, the base part 8 and the emitter region 5, or the other path of the trigger current is along the substrate layer 3, the base part 8 and the emitter region 5. The trigger currents of the two paths trigger the thyristor together, and a gate metal layer is not required to be led out of the second conductive layer, so that the complexity of the manufacturing process of the thyristor is reduced; and the thyristor is used for protecting the IGBT module without additional gate driving circuits and protecting elements, thereby reducing the complexity of a protection system.
Both second conductive regions 4 comprise a base 8 and an extension 9, the extension 9 of a first second conductive region 4 being formed along the base 8 of the first second conductive region 4 towards the second conductive region 4, the extension 9 of the second conductive region 4 being formed along the base 8 of the second conductive region 4 towards the first second conductive region 4. The base portion 8 and the extension portion 9 of the second conductive region 4 constitute a step shape in a direction perpendicular to the direction from the anode metal electrode 1 to the second conductive layer.
In one embodiment, the two second conductive areas 4 are identical in shape. The base portions 8 of the two second conductive areas 4 are identical in shape and the extensions 9 of the two second conductive areas 4 are identical in shape.
As shown in fig. 2, the extension 9 may be divided into a first extension region 91 and a second extension region 92, the first extension region 91 covering the side of the base 8 remote from the substrate layer 3, and the second extension region 92 directly covering the side of the substrate layer 3 remote from the first conductive layer 2. The thickness of the first extension 91 is smaller than the thickness of the second extension 92, so that the extension 91 is integrally shaped like a beak in cross section. In one embodiment, the distance of the extension 9 in the direction of the second conductive layer to the anode metal electrode 1, i.e. the thickness of the extension 9, is 800 μm to 1000 μm. The distance that the extension 9 extends from the base 8, i.e., the length of the extension 9, is 70 μm to 120 μm. The extension 9 may be sized according to the forward breakover voltage of the thyristor as required by the application.
In one embodiment, the distance between the two extensions 9 is 50 μm to 220 μm. Fig. 3 shows a graph of the distance L between two extensions 9 versus the forward breakover voltage of the thyristor. According to practical application needs, the thyristor can have a desired forward breakover voltage by adjusting the distance between the two extension parts 9.
In one embodiment, the thyristor further comprises an oxide layer 10 arranged on the side of the cover two extensions 9 remote from the substrate layer 3. Wherein an oxide layer 10 is provided on the spaced-apart region between the two extensions 9.
In one embodiment, the material of the oxide layer 10 is silicon dioxide. Wherein the thickness of the oxide layer 10 may be 1 μm to 5 μm.
In one embodiment, the concentration of the semiconductor material of the first conductivity type constituting the extension 9 is higher than the concentration of the semiconductor material of the first conductivity type constituting the base 8.
In one embodiment, the concentration of the semiconductor material of the first conductivity type constituting the extension 9 is 10 18 To 10 20 cm -3 。
The embodiment of the invention also discloses a method for manufacturing the thyristor with the overvoltage protection function, which comprises the steps S1 to S7 as shown in FIG. 4.
In step S1, doping of the first conductivity-type semiconductor material is performed on opposite sides (e.g., upper and lower surfaces) of the substrate layer 3 made of the second conductivity-type semiconductor material to form the first and second conductive layers 2 and 2, as shown in fig. 5.
Wherein, a proper N-type silicon monocrystal substrate can be selected as a substrate layer 3 according to the forward voltage-withstanding grade of the IGBT module to manufacture the thyristor with the overvoltage protection function. The doping of the semiconductor material of the first conductivity type is carried out on both sides of the substrate layer 3 made of the semiconductor material of the second conductivity type, and the P-type doping can be carried out by means of pre-deposition or ion implantation.
In step S2, the central region of the second conductive layer is etched to expose the second conductive type semiconductor material of the substrate layer 3, thereby forming two spaced apart second conductive regions 4, and the two second conductive regions 4 are advanced toward the substrate layer 3, as shown in fig. 6. It is noted that only one conductive region 4 is shown in fig. 6.
The etching of the central region of the second conductive layer to expose the central region of the second conductive type semiconductor material of the substrate layer 3 to form two spaced apart second conductive regions 4 may be selective etching of the central region silicon to a thickness of 5 μm to 10 μm. Advancing the two second conductive regions 4 towards the substrate layer 3 may be by advancing the P base region.
In step S3, doping of the second conductivity type semiconductor material is performed in the surface of the two second conductivity type regions 4 remote from the substrate layer 3 to form spaced emitter regions 5, as shown in fig. 7.
Doping of the second conductivity type semiconductor material in the two second conductivity regions 4 at a surface remote from the substrate layer 3 may be selectively N-doped by means of pre-deposition or ion implantation and advanced to form n+ emitter regions 5.
In step S4, doping of the first conductivity type semiconductor material is performed in the surface of the two second conductive regions 4 remote from the substrate layer 3 to form an extension 9 at the base 8 of the second conductive region 4 towards the other second conductive region 4, wherein doping of the first conductivity type semiconductor material is also performed around the emitter region 5 on the surface of the two second conductive regions 4 remote from the substrate layer, as shown in fig. 8.
Step S4 may be, for example, selectively P-type doping the surfaces of the two second conductive regions 4 away from the substrate layer 3 by pre-deposition or ion implantation, and advancing to form a p+ region.
In step S5, the anode metal electrode 1 is provided on the side of the first conductive layer 2 away from the substrate layer 3, as shown in fig. 10;
in step S6, a floating metal electrode 6 and a cathode metal electrode 7 are provided corresponding to the emitter region 5 on the side of the two second conductive regions 4 remote from the substrate layer 3, as shown in fig. 10.
In addition, the terminal modeling and passivation can be performed to form the thyristor, and the process is the same as that of a common thyristor, and is not repeated.
In one embodiment, the method for manufacturing the thyristor with the overvoltage protection function further comprises:
in step S7, an oxide layer 10 is disposed on the side of the second conductive layer away from the substrate layer 3 corresponding to the central region, as shown in fig. 9. The oxide layer 10 may be provided in the central region, for example, by depositing a silicon dioxide oxide layer about 1 μm to 5 μm thick.
Wherein step S7 may be implemented before step S6.
The thyristor with overvoltage protection function manufactured by the manufacturing method is used in parallel with the IGBT module, and when the collector voltage of the IGBT module (namely the voltage of the anode metal electrode of the thyristor) reaches a preset value, the thyristor is triggered to be turned on, so that the collector voltage of the IGBT module is rapidly reduced, and the IGBT module is protected from being damaged by system overvoltage. And the thyristor is used as a main circuit current channel after being opened, so that energy generated by overvoltage of the system can be further released.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims (10)
1. A thyristor having an overvoltage protection function, comprising:
a first conductive layer made of a first conductive type semiconductor material, a substrate layer made of a second conductive type semiconductor material, and a second conductive layer made of the first conductive type semiconductor material, which are sequentially provided;
an anode metal electrode provided on a side of the first conductive layer remote from the substrate layer;
emitter regions of a second conductivity type semiconductor material disposed at intervals within the second conductive layer; and
a floating metal electrode and a cathode metal electrode which are respectively arranged on the second conductive layer and correspond to the emitter region,
the substrate layer extends towards the direction of the second conductive layer to divide the second conductive layer into two second conductive areas, two separated second conductive areas are formed, and the emitter areas are arranged in the two second conductive areas;
the two second conductive regions each include a base portion and an extension portion extending along the base portion toward the other second conductive region, the base portion and the extension portion of the second conductive region constituting a step shape in a direction perpendicular to a direction from the anode metal electrode to the second conductive layer.
2. The thyristor with overvoltage protection function according to claim 1, wherein the shapes of the two second conductive regions are identical.
3. The thyristor with overvoltage protection function according to claim 1, wherein the thickness of the extension is 800-1000 [ mu ] m, and the length of the extension is 70-120 [ mu ] m.
4. A thyristor with overvoltage protection function according to claim 1 or 3, characterized in that the distance between two extensions is 50-220 μm.
5. A thyristor with overvoltage protection function according to claim 1 or 2, characterized in that the thyristor further comprises an oxide layer arranged on the side of the cover two extensions remote from the substrate layer.
6. The thyristor with overvoltage protection function according to claim 5, wherein the oxide layer is made of silicon dioxide.
7. The thyristor with overvoltage protection function according to claim 1, wherein a concentration of the semiconductor material of the first conductivity type constituting the extension is higher than a concentration of the semiconductor material of the first conductivity type constituting the base.
8. The thyristor with overvoltage protection function according to claim 1 or 7, wherein a concentration of the semiconductor material of the first conductivity type constituting the extension is 1018 to 1020cm "3.
9. A method of manufacturing a thyristor having an overvoltage protection function, comprising:
doping the first conductive type semiconductor material on opposite sides of the substrate layer made of the second conductive type semiconductor material to form a first conductive layer and a second conductive layer, respectively;
etching a central region of the second conductive layer to expose the central region of the substrate layer, thereby forming two separated second conductive regions, and pushing the two second conductive regions toward the substrate layer;
doping a second conductivity type semiconductor material in the two second conductivity regions at a surface remote from the substrate layer to form spaced emitter regions;
doping of a first conductivity type semiconductor material in the two second conductivity regions away from the surface of the substrate layer to form an extension at the base of the second conductivity region towards the other second conductivity region, wherein doping of the first conductivity type semiconductor material is also performed around the emitter region on the surface of the two second conductivity regions away from the substrate layer;
an anode metal electrode is arranged on one surface of the first conductive layer away from the substrate layer; the base portion and the extension portion of the second conductive region constitute a step shape in a direction perpendicular to a direction from the anode metal electrode to the second conductive layer;
and floating metal electrodes and cathode metal electrodes are respectively arranged on one surfaces, far away from the substrate layers, of the two second conductive areas, corresponding to the emitter areas.
10. The method of manufacturing a thyristor having an overvoltage protection function according to claim 9, further comprising:
an oxide layer is disposed on a side of the second conductive layer remote from the substrate layer corresponding to the central region.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0108961A1 (en) * | 1982-11-15 | 1984-05-23 | Kabushiki Kaisha Toshiba | Thyristor device protected from an overvoltage |
| WO1999046820A1 (en) * | 1998-03-10 | 1999-09-16 | Oryx Technology Corporation | Over-voltage protection device for integrated circuits |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0029932B1 (en) * | 1979-11-16 | 1984-08-15 | General Electric Company | Asymmetrical field controlled thyristor |
| JPH05121729A (en) * | 1991-10-25 | 1993-05-18 | Fuji Electric Co Ltd | Semiconductor device having misfet controlled thyristor |
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| EP0108961A1 (en) * | 1982-11-15 | 1984-05-23 | Kabushiki Kaisha Toshiba | Thyristor device protected from an overvoltage |
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