CN112798667A - Nitrogen-oxygen sensor chip with shielding layer - Google Patents
Nitrogen-oxygen sensor chip with shielding layer Download PDFInfo
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- CN112798667A CN112798667A CN202110273435.3A CN202110273435A CN112798667A CN 112798667 A CN112798667 A CN 112798667A CN 202110273435 A CN202110273435 A CN 202110273435A CN 112798667 A CN112798667 A CN 112798667A
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- electrode
- chamber
- shielding
- leakage current
- layer
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- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 239000010410 layer Substances 0.000 claims abstract description 27
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 239000002346 layers by function Substances 0.000 claims abstract description 15
- 238000001514 detection method Methods 0.000 claims abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 3
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical class ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims 5
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 24
- 239000007789 gas Substances 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/28—Electrolytic cell components
- G01N27/30—Electrodes, e.g. test electrodes; Half-cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/58—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation characterised by the form or material of the contacting members
- H01R4/66—Connections with the terrestrial mass, e.g. earth plate, earth pin
Abstract
The invention discloses a nitrogen-oxygen sensor chip with a shielding layer, which comprises a detection device, wherein the detection device comprises a heating electrode and a signal layer, a leakage current shielding functional layer is arranged between the heating electrode and the signal layer, one electrode in the leakage current shielding functional layer is connected with a ground wire of the heating electrode, and one electrode wire in the leakage current shielding functional layer is grounded in the conventional controller. Above-mentioned technical scheme, the structure sets up rationally, is provided with the shielding leakage current functional layer between heating electrode and the signal layer, and one electrode in the shielding leakage current functional layer is connected with heating electrode's ground wire. Leakage current can be effectively conducted out through the ground wire, so that the precision of the nitrogen oxygen sensor is improved, and the practicability is good.
Description
Technical Field
The invention relates to the technical field of sensor chips, in particular to a nitrogen-oxygen sensor chip with a shielding layer.
Background
The conventional scheme of using a reduction catalyst (SCR) to purify the nitrogen oxides in the waste. The SCR method can selectively adsorb nitrogen oxides in exhaust gas to a catalyst, and decompose the nitrogen oxides into nitrogen and water by a reduction reaction by injecting urea to the catalyst and discharge the nitrogen oxides, and therefore, it is first necessary to detect the content of nitrogen oxides in the exhaust gas by a nitrogen oxide sensor. However, in the process of discharging exhaust gas from a vehicle, the variation range of the exhaust gas temperature is very large, and may be rapidly increased from 100 ℃ to 600 ℃, the amount of the reducing agent to be injected also can be greatly changed under the condition of the rapid temperature change, the adsorption capacity of the catalyst is reduced along with the increase of the temperature, and the problem of ammonia leakage is easily caused, so the monitoring data of ammonia has important significance for reducing the discharge.
However, the conventional sensor chip can only detect the content of nitrogen oxides in exhaust gas, and due to the unreasonable structural arrangement, leakage current may exist in the conventional sensor chip, so that the conventional sensor chip has low precision in detecting the content of nitrogen oxides in exhaust gas, and the practicability is poor.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide the nitrogen oxygen sensor chip with the shielding layer, which has reasonable structural design, can effectively conduct out leakage current, thereby improving the precision of the nitrogen oxygen sensor and having good practicability.
In order to achieve the purpose, the invention provides the following technical scheme: the utility model provides a take nitrogen oxygen sensor chip of shielding layer, includes detection device, detection device includes heating electrode and signal layer, be provided with shielding leakage current functional layer between heating electrode and the signal layer, one electrode in the shielding leakage current functional layer is connected with heating electrode's ground wire.
The invention is further configured to: the detection device also comprises a reference electrode, a substrate, a first electrode, a second electrode, a third electrode and a fourth electrode; the substrate is provided with a first cavity and a second cavity, the first electrode is arranged in the first cavity, and the second electrode and the third electrode are arranged in the second cavity.
The invention is further configured to: the fourth electrode is electrically connected with the first electrode, the second electrode and the third electrode, the first electrode and the fourth electrode are used for adjusting the oxygen concentration in the first chamber, the second electrode and the fourth electrode are used for adjusting the oxygen concentration in the second chamber, and the third electrode and the fourth electrode are used for measuring the oxygen concentration in the second chamber.
The invention is further configured to: the reference electrode is electrically connected to the first electrode and the second electrode, the first electrode and the reference electrode are used for measuring the oxygen concentration in the first chamber to control the adjustment amount of the first electrode and the fourth electrode on the oxygen in the first chamber, and the second electrode and the reference electrode are used for measuring the oxygen concentration in the second chamber to control the adjustment amount of the second electrode and the fourth electrode on the oxygen in the second chamber.
The invention is further configured to: the heating electrode is arranged inside the substrate.
The invention is further configured to: the base plate is further provided with an opening communicated with the first cavity, and a buffer barrier is arranged in the opening.
The invention has the advantages that: compared with the prior art, the structure of the invention is more reasonable, the leakage current shielding function layer is arranged between the heating electrode and the signal layer, and one electrode in the leakage current shielding function layer is connected with the ground wire of the heating electrode. Leakage current can be effectively conducted out through the ground wire, so that the precision of the nitrogen oxygen sensor is improved, and the practicability is good.
The invention is further described with reference to the drawings and the specific embodiments in the following description.
Drawings
FIG. 1 is a cross-sectional view of an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a leakage current shielding functional layer according to an embodiment of the present invention.
Detailed Description
In the description of the present embodiment, it should be noted that, as the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", "front", "rear", etc. appear, their indicated orientations or positional relationships are based on those shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" as appearing herein are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Referring to fig. 1 and 2, the nitrogen-oxygen sensor chip with the shielding layer disclosed by the invention comprises a detection device, wherein the detection device comprises a heating electrode 117 and a signal layer 118, a shielding leakage current functional layer 2 is arranged between the heating electrode 117 and the signal layer 118, one electrode in the shielding leakage current functional layer 2 is connected with a ground wire of the heating electrode 117, and one electrode wire in the shielding leakage current functional layer 2 is grounded in an existing controller.
Preferably, the shielding leakage current function layer 2 is provided with a zirconia layer 3 and a pad 4 at one end.
In order to make the structure of the present invention more reasonable, preferably, the detecting device of this embodiment further includes a reference electrode 111, a substrate 112, a first electrode 113, a second electrode 114, a third electrode 115, and a fourth electrode 116; the substrate 112 has a first chamber 1121 and a second chamber 1122 formed thereon, the first electrode 113 is disposed in the first chamber 1121, and the second electrode 114 and the third electrode 115 are disposed in the second chamber 1122.
The fourth electrode 116 is electrically connected to the first electrode 113, the second electrode 114 and the third electrode 115, the first electrode 113 and the fourth electrode 116 are used for adjusting the oxygen concentration in the first chamber 1121, the second electrode 114 and the fourth electrode 116 are used for adjusting the oxygen concentration in the second chamber 1122, and the third electrode 115 and the fourth electrode 116 are used for measuring the oxygen concentration in the second chamber 1122.
The reference electrode 111 is electrically connected to the first electrode 113 and the second electrode 114, the first electrode 113 and the reference electrode 111 are used for measuring the oxygen concentration in the first chamber 1121 to control the adjustment amount of the first electrode 113 and the fourth electrode 116 to the oxygen in the first chamber 1121, and the second electrode 114 and the reference electrode 111 are used for measuring the oxygen concentration in the second chamber 1122 to control the adjustment amount of the second electrode 114 and the fourth electrode 116 to the oxygen in the second chamber 1122.
The heating electrode 117 is disposed inside the substrate 112.
An opening 1123 is further formed on the substrate 112 and communicates with the first chamber 1121, and a buffering barrier 1124 is disposed in the opening 1123.
In practical application, a shielding leakage current functional layer is arranged between the heating electrode and the signal layer, and one electrode in the shielding leakage current functional layer is connected with a ground wire of the heating electrode. Leakage current can be effectively conducted out through the ground wire, so that the precision of the nitrogen oxygen sensor is improved, and the practicability is good.
The above embodiments are described in detail for the purpose of further illustrating the present invention and should not be construed as limiting the scope of the present invention, and the skilled engineer can make insubstantial modifications and variations of the present invention based on the above disclosure.
Claims (6)
1. A nitrogen-oxygen sensor chip with a shielding layer comprises a detection device, wherein the detection device comprises a heating electrode (117) and a signal layer (118), and is characterized in that: and a shielding leakage current functional layer (2) is arranged between the heating electrode (117) and the signal layer (118), and one electrode in the shielding leakage current functional layer (2) is connected with the ground wire of the heating electrode (117).
2. The nitroxide sensor chip with shielding layer of claim 1, wherein: the detection device further comprises a reference electrode (111), a substrate (112), a first electrode (113), a second electrode (114), a third electrode (115) and a fourth electrode (116); the substrate (112) is provided with a first chamber (1121) and a second chamber (1122), the first electrode (113) is arranged in the first chamber (1121), and the second electrode (114) and the third electrode (115) are arranged in the second chamber (1122).
3. The nitroxide sensor chip with shielding layer of claim 2, wherein: the fourth electrode (116) is electrically connected to the first electrode (113), the second electrode (114) and the third electrode (115), the first electrode (113) and the fourth electrode (116) are used for adjusting the oxygen concentration in the first chamber (1121), the second electrode (114) and the fourth electrode (116) are used for adjusting the oxygen concentration in the second chamber (1122), and the third electrode (115) and the fourth electrode (116) are used for measuring the oxygen concentration in the second chamber (1122).
4. The nitroxide sensor chip with shielding layer of claim 3, wherein: the reference electrode (111) is electrically connected to the first electrode (113) and the second electrode (114), the first electrode (113) and the reference electrode (111) are used for measuring the oxygen concentration in the first chamber (1121) to control the adjustment amount of the first electrode (113) and the fourth electrode (116) to the oxygen in the first chamber (1121), and the second electrode (114) and the reference electrode (111) are used for measuring the oxygen concentration in the second chamber (1122) to control the adjustment amount of the second electrode (114) and the fourth electrode (116) to the oxygen in the second chamber (1122).
5. The nitroxide sensor chip with shielding layer of claim 4, wherein: the heating electrode (117) is disposed inside the substrate (112).
6. The nitroxide sensor chip with shielding layer of claim 5, wherein: an opening (1123) communicated with the first cavity (1121) is further formed in the substrate (112), and a buffer barrier (1124) is arranged in the opening (1123).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110273435.3A CN112798667A (en) | 2021-03-15 | 2021-03-15 | Nitrogen-oxygen sensor chip with shielding layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110273435.3A CN112798667A (en) | 2021-03-15 | 2021-03-15 | Nitrogen-oxygen sensor chip with shielding layer |
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| Publication Number | Publication Date |
|---|---|
| CN112798667A true CN112798667A (en) | 2021-05-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202110273435.3A Pending CN112798667A (en) | 2021-03-15 | 2021-03-15 | Nitrogen-oxygen sensor chip with shielding layer |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11108888A (en) * | 1997-10-03 | 1999-04-23 | Riken Corp | Gas sensor |
| US20010047939A1 (en) * | 2000-03-25 | 2001-12-06 | Carsten Springhorn | Electrochemical sensor |
| US20070144904A1 (en) * | 2003-11-12 | 2007-06-28 | Rainer Strohmaier | Device for measuring the pressure in a gas mixture |
| CN209400459U (en) * | 2018-11-27 | 2019-09-17 | 深圳市森世泰科技有限公司 | A kind of ceramic chip and sensor for gas concentration measurement |
| CN111141800A (en) * | 2020-02-19 | 2020-05-12 | 浙江百岸科技有限公司 | Sensor chip |
| CN111141803A (en) * | 2020-01-14 | 2020-05-12 | 浙江百岸科技有限公司 | Nitrogen-oxygen sensor |
| CN214472943U (en) * | 2021-03-15 | 2021-10-22 | 浙江百岸科技有限公司 | Nitrogen-oxygen sensor chip with shielding layer |
-
2021
- 2021-03-15 CN CN202110273435.3A patent/CN112798667A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11108888A (en) * | 1997-10-03 | 1999-04-23 | Riken Corp | Gas sensor |
| US20010047939A1 (en) * | 2000-03-25 | 2001-12-06 | Carsten Springhorn | Electrochemical sensor |
| US20070144904A1 (en) * | 2003-11-12 | 2007-06-28 | Rainer Strohmaier | Device for measuring the pressure in a gas mixture |
| CN209400459U (en) * | 2018-11-27 | 2019-09-17 | 深圳市森世泰科技有限公司 | A kind of ceramic chip and sensor for gas concentration measurement |
| CN111141803A (en) * | 2020-01-14 | 2020-05-12 | 浙江百岸科技有限公司 | Nitrogen-oxygen sensor |
| CN111141800A (en) * | 2020-02-19 | 2020-05-12 | 浙江百岸科技有限公司 | Sensor chip |
| CN214472943U (en) * | 2021-03-15 | 2021-10-22 | 浙江百岸科技有限公司 | Nitrogen-oxygen sensor chip with shielding layer |
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