CN209148594U - A kind of NOx sensor chip pumping current adjustment - Google Patents
A kind of NOx sensor chip pumping current adjustment Download PDFInfo
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- CN209148594U CN209148594U CN201821916378.6U CN201821916378U CN209148594U CN 209148594 U CN209148594 U CN 209148594U CN 201821916378 U CN201821916378 U CN 201821916378U CN 209148594 U CN209148594 U CN 209148594U
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- barrier layer
- nox sensor
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Abstract
The utility model discloses a kind of NOx sensor chip for pumping current adjustment, including chip basal body, matcoveredn, external electrode and air inlet are set gradually from top to bottom in the chip basal body；Pump electrode working chamber pump electrode working chamber and second in is disposed in first in chip basal body from left to right, pump electrode working chamber is connected to air inlet in first, and is provided with surface coating in first in pump electrode working chamber, diffusion barrier layer, binder transition zone, pump top electrode in first, in first is pumped lower electrode in pump linking electrode and first；Surface coating is covered on the upper surface of the diffusion barrier layer, by carrying out the tail gas admission velocity that laser cutting process adjusts diffusion barrier layer to surface coating；The bottom surface of diffusion barrier layer is adhesively fixed with binder transition zone.Above-mentioned technical proposal, reasonable in design, structure novel, the size that can effectively adjust IP0, raising product qualification rate, reduction cost of goods manufactured and practicability are good.
Description
Technical field
The utility model relates to NOx sensor technical fields, and in particular to a kind of NOx sensor core for pumping current adjustment
Piece.
Background technique
NOx refers to that, due to N2O3, N2O5, N2O4 is in height due to the summation for the generated various oxynitrides that burn
It is unstable at 200 DEG C, and only there was only 2% exhaust emissions for deriving from automobile in the discharge of all N2O, and N2O is to environment
Caused by influence it is different from NO and NO2, so NO and NO2 are generally called NOx.NOx influences greatly urban air pollution,
Discharge causes photochemical pollution, also generation city fog, acid rain etc., endangers the health of city dweller." 12th Five-Year Plan " country determines
NOx and ammonia nitrogen the binding indicator is included in, most important of which is that the NOx emission of motor vehicle.Heavy-duty car ownership only accounts for
The 5% of the total ownership of motor vehicle, the discharge amount for accounting for 15%, NOx of car ownership but account for the 76% of total release, so control
It is most important for making the discharge of the NOx of heavy goods vehicles.
Chinese heavy goods vehicles state IV, state V, state's VI scheme largely use selective reduction catalyst (SCR) scheme, and SCR method can
The NOx in tail gas is selectively adsorbed in catalyst, by NOx being decomposed with reduction reaction to catalyst ejector urea
It at nitrogen and water and discharges, NOx content in discharge gas is detected by NOx sensor, in control NOx emission, NOx sensor
It is one of key technology and key part, plays critically important effect to controlling and reducing NOx emission, in state's VI scheme, one
Vehicle needs to use two NOx sensors.
Currently, the NOx sensor dress that China is used at this stage on large diesel engine relies primarily on external import, commercially
The NOx sensor major vendor of change is German Continent Group and Bosch, and the intelligent NOx sensor technology of Continent Group is as its city
The main competitiveness of field carries out comprehensive technology blockage to China, and price is high, and service, maintenance are very difficult.As China is practical new
The technical solution recorded in type patent (Authorization Notice No.: CN205808981): NOx sensor chip mainly passes through built-in expansion
Dissipate barrier, the measurement to NOx realized by oxygen pump, auxiliary pump, measurement pump, the first diffusion barrier directly determine IP0 size (
It is exactly the speed that tail gas enters chip interior).The NOx sensor chip of technical solution production has no idea to adjust after firing
It is whole, the size of IP0 can not be adjusted, qualification rate will be greatly reduced.
Utility model content
In view of the deficienciess of the prior art, the purpose of this utility model is to provide a kind of reasonable in design, structures
Novel, can effectively to adjust IP0 size improves product qualification rate, reduces cost of goods manufactured and pump electricity that practicability is good
Flow adjustable NOx sensor chip.
To achieve the above object, the utility model provides following technical solution: a kind of NOx sensor pumping current adjustment
Chip, including chip basal body set gradually matcoveredn, external electrode and air inlet in the chip basal body from top to bottom；It is described
Pump electrode working chamber pump electrode working chamber and second in be disposed in first in chip basal body from left to right, in described first
Pump electrode working chamber is connected to air inlet, and is provided with surface coating in pump electrode working chamber in first, diffusion barrier layer, is glued
It ties agent transition zone, pump top electrode in first, pump lower electrode in pump linking electrode and first in first；The surface coating covering
On the upper surface of the diffusion barrier layer, by carrying out the tail that laser cutting process adjusts diffusion barrier layer to surface coating
Gas admission velocity；The bottom surface of the diffusion barrier layer is adhesively fixed with binder transition zone；Pump linking electrode is set in described first
Set pump in first pumped in top electrode and first under between electrode, and pump top electrode in first, pump linking electrode and the in first
It pumps in one and constitutes pump electrode device in one complete first after lower electrode connection, and pump electrode device and the external electrode in first
First group of oxygen pump is constituted together.
The utility model is further arranged to: in described first in pump electrode working chamber and second between pump electrode working chamber
It is provided with diffusion admittance, is provided with pump top electrode in second, pump linking electrode in second in described second in pump electrode working chamber
With second in pump lower electrode, the setting of pump linking electrode pumps in second in described second pumped in top electrode and second under electrode it
Between, and pump top electrode in second, lower electrode connection is pumped in pump linking electrode and second in second after constitute one complete second
Interior pump electrode device, and this in second pump electrode device second group of oxygen pump is constituted together with external electrode.
The utility model is further arranged to: pump electrode working chamber bottom righthand side is provided with reaction electrode in described second, institute
It states and is provided with reaction electrode diffusion layer on the upper surface of reaction electrode.
The utility model is further arranged to: the lower position that the chip basal body is located at pump electrode working chamber in second is set
It is equipped with reference cavity, reference electrode is provided in reference cavity, the reference electrode is communicated by reference cavity with air.
The utility model is further arranged to: it is empty that the lower position that the chip basal body is located at reference cavity is provided with heating
Chamber is provided with heating electrode in the heating cavities, is provided with insulating layer, the heating on the upper surface of the heating electrode
Lower insulating layer is provided on the bottom surface of electrode.
The utility model is further arranged to: the chip basal body is formed by stacking by multilayer zirconium oxide cast sheet.
The utility model is further arranged to: the surface coating is made of zirconia material.
The utility model is further arranged to: the diffusion barrier layer is made of porous zirconia material；The bonding
Agent transition zone is made by mixing by the aggregate of zirconia material and diffusion barrier layer according to 1:1.
The utility model has the advantages that: compared with prior art, the utility model structure setting is more reasonable, and structure is new
Grain husk, improves product qualification rate, reduces the size (namely tail gas enter chip interior speed) that can effectively adjust IP0
Cost of goods manufactured and practicability is good.
The utility model is described in further detail with specific embodiment with reference to the accompanying drawings of the specification.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model embodiment.
Specific embodiment
In the description of the present embodiment, it should be noted that such as occur term " center ", "upper", "lower", "left", "right",
"vertical", "horizontal", "inner", "outside", "front", "rear" etc., indicated by orientation or positional relationship be it is based on the figure
Orientation or positional relationship is merely for convenience of describing the present invention and simplifying the description, rather than the dress of indication or suggestion meaning
It sets or element must have a particular orientation, be constructed and operated in a specific orientation, it is thus impossible to be interpreted as to the utility model
Limitation.In addition, such as there is term " first ", " second ", " third " are used for description purposes only, and should not be understood as instruction or dark
Show relative importance.
Referring to Fig. 1, a kind of NOx sensor chip pumping current adjustment disclosed by the utility model, including chip basal body 1,
Matcoveredn 2, external electrode 3 and air inlet 11 are set gradually in the chip basal body 1 from top to bottom；In the chip basal body 1 from
Left-to-right is disposed in first pump electrode working chamber 13 in pump electrode working chamber 12 and second, pump electrode work in described first
Make chamber 12 to be connected to air inlet 11, and is provided with surface coating 4 in pump electrode working chamber 12 in first, diffusion barrier layer 5, glues
It ties and pumps lower electrode 9 in agent transition zone 6, first in pump top electrode 7, first in pump linking electrode 8 and first；The surface coating
4 are covered on the upper surface of the diffusion barrier layer 5, adjust diffusion barrier by carrying out laser cutting process to surface coating 4
Hinder the tail gas admission velocity of layer 5；The bottom surface of the diffusion barrier layer 5 is adhesively fixed with binder transition zone 6；Pump in described first
Be connected the setting of electrode 8 pump in first pumped in top electrode 7 and first under between electrode 9, and in first in pump top electrode 7, first
Pump linking electrode 8 and the first interior pump constitute pump electrode device in one complete first after lower electrode 9 connects, and the first interior pump
Electrode assembly constitutes first group of oxygen pump with external electrode 3 together.
It is provided with diffusion admittance 14, institute in described first in pump electrode working chamber 12 and second between pump electrode working chamber 13
It states and is provided in pump electrode working chamber 13 in second in second in pump top electrode 10, second in pump linking electrode 15 and second under pump
Electrode 16, the setting of pump linking electrode 15 pumps in second in described second pumped in top electrode 10 and second under between electrode 16, and
It is pumped in pump linking electrode 15 and second in pump top electrode 10, second in second after lower electrode 16 connects and constitutes one complete second
Interior pump electrode device, and this in second pump electrode device with external electrode 2 constitute second group of oxygen pump together.
13 bottom righthand side of pump electrode working chamber is provided with reaction electrode 17, the upper surface of the reaction electrode 17 in described second
On be provided with reaction electrode diffusion layer 18.
The lower position that the chip basal body 1 is located at pump electrode working chamber 13 in second is provided with reference cavity 19, reference
Reference electrode 20 is provided in cavity 19, the reference electrode 20 is communicated by reference cavity 19 with air.
The lower position that the chip basal body 1 is located at reference cavity 19 is provided with heating cavities 110, the heating cavities
It is provided with heating electrode 21 in 110, is provided with insulating layer 22, the heating electrode 21 on the upper surface of the heating electrode 21
Bottom surface on be provided with lower insulating layer 23.
The chip basal body 1 is formed by stacking by multilayer zirconium oxide cast sheet.
The surface coating 4 is made of zirconia material.
The diffusion barrier layer 5 is made of porous zirconia material；The binder transition zone 6 by zirconia material and
The aggregate of diffusion barrier layer 5 is made by mixing according to 1:1.
Preferably, chip basal body 1 is mainly YSZ (zirconium oxide of stabilized with yttrium oxide) composition, it is cast using multilayer YSZ
Piece is formed by stacking, and carries out the operations such as punching printing in YSZ cast sheet respectively.Protective layer 2 is located at the outmost surface of chip, externally
Electrode 3 formed protective effect, by carried out in YSZ cast sheet printing platinum electrode form complete external electrode 3, after drying again into
Row printing protective layer 2,11 part hollow out of air inlet are not printed, and obstruction air inlet is avoided.
The surface coating 4 is made of fine and close YSZ, the surface of diffusion barrier layer 5 is covered on, by surface
Coating 4, which carries out laser cutting process, can continuously adjust the diffusivity of diffusion barrier layer 5, and the area of cutting is bigger, diffusion barrier
Layer is hindered to expose more, the value of IP0 will be bigger, and then achievees the purpose that demarcate NOx sensor chip I P0, improves production
Qualification rate and product consistency.The purpose of binder transition zone 6 is guaranteed between YSZ cast sheet and diffusion barrier layer 5
In conjunction with.
When tail gas is by air inlet 11, by diffusion barrier layer 5 into pump electrode working chamber 12 in first, work first is interior to be pumped
Top electrode 7 is pumped in the top first of electrode working chamber 12, pumps lower electrode 9 in first in the lower part first of pump electrode working chamber 12,
Pump electrode device in an entirety first is connected by the first interior pump linking electrode 8 between them, and pump electrode fills in first
It sets and constitutes first group of oxygen pump with external electrode 3, pump linking electrode 8 can both play connection function in first, itself can also pump oxygen,
Increase the surface area of electrode, tail gas passes through in first after pump electrode working chamber 12, and most of oxygen is all pumped out.
Tail gas passes through in first after pump electrode working chamber 12, enters pump electrode working chamber in second by diffusion admittance 14
13, top electrode 10 is pumped in the top setting second of pump electrode working chamber 13 in second, the lower part of pump electrode working chamber 13 in second
Lower electrode 16 is pumped in setting second, and pump electrode in an entirety second is connected by pump linking electrode 15 in second between them
Device, and pump electrode device and external electrode 3 constitute second group of oxygen pump in second, play the function of auxiliary pump oxygen, pump rank in second
Receiving electrode 15 can both play connection function, itself can also pump oxygen, increase the surface area of electrode.Tail gas passes through the second interior pump electricity
After pole working chamber 13, oxygen almost all is pumped out, NO2It is converted into NO.
After tail gas completes pump oxygen by auxiliary pump, the surface of reaction electrode 17 is reached by reaction electrode diffusion layer 18, instead
Answer electrode NO can be decomposed into N2And O2, NOx content is known that by the electric current of the reaction electrode 17.
It is communicated by reference cavity 19 with air in the reference electrode 20 that the lower section of reaction electrode 17 is arranged, reference cavity 19
Continue up to the tail portion of chip.Reference electrode 20 can with pump electrode device in pump electrode device in external electrode 3, first, second,
Reaction electrode is respectively formed can nernst voltage.
NOx sensor chip can be made to reach work temperature in 10s in the heating electrode 21 that the lower section of reference electrode 20 is arranged
Degree makes YSZ have the function of pumping oxonium ion, and the upper insulating layer 22 and lower insulating layer 23 for heating electrode 21 prevent heating electrode 21
Electric current has interference to the electric current of signal electrode.
The present embodiment protective layer is located at the outmost surface of chip, forms protective effect to external electrode, prevents noxious material pair
External electrode forms poisoning effect, is mainly made of porous zirconium oxide, it is ensured that gas smoothly reaches electrode surface, and can
Outside, the service life of chip can be improved in noxious material gear.
All electrodes are mainly made of platinum, and according to different role, electrode of a pump cell and reference electrode are mainly porous platinum
Electrode, pump electrode is a kind of porous platinum electrode, the reaction electrode for being added to a small amount of gold in pump electrode and second in first is a kind of
Platinum rhodium electrode, heating electrode are that a kind of platinum electrode of relatively densification is added to a small amount of aluminium oxide increase adhesive force.It is built-in
The main function of heating electrode 21 is to heat NOx sensor rapidly in a short time to reach 810 DEG C of operating temperature or so.
When practical application, the utility model structure setting is reasonable, structure novel, can effectively adjust IP0 size (
Be exactly the speed that tail gas enters chip interior), improve product qualification rate, reduce cost of goods manufactured and practicability it is good.
Above-described embodiment is served only for that the utility model is further described, no to the specific descriptions of the utility model
It can be interpreted as the restriction to scope of protection of the utility model, the technician of this field is according to the content pair of above-mentioned utility model
The utility model is made some nonessential modifications and adaptations and is each fallen within the protection scope of the utility model.
Claims (8)
1. a kind of NOx sensor chip for pumping current adjustment, including chip basal body (1), it is characterised in that: the chip basal body
(1) matcoveredn (2), external electrode (3) and air inlet (11) are set gradually on from top to bottom；From a left side in the chip basal body (1)
Pump electrode working chamber (13) in pump electrode working chamber (12) and second, pump electrode in described first are disposed in first to the right side
Working chamber (12) is connected to air inlet (11), and is provided with surface coating (4), diffusion in first in pump electrode working chamber (12)
Electricity under barrier layer (5), binder transition zone (6), the first interior pump top electrode (7), the first interior pump linking electrode (8) and the first interior pump
Pole (9)；The surface coating (4) is covered on the upper surface of the diffusion barrier layer (5), by surface coating (4)
Carry out the tail gas admission velocity of laser cutting process adjustment diffusion barrier layer (5)；The bottom surface of the diffusion barrier layer (5) and bonding
Agent transition zone (6) is adhesively fixed；Pump linking electrode (8), which is arranged in first, in described first pumps pump in top electrode (7) and first
Top electrode (7) are pumped between lower electrode (9), and in first, the first interior pump is connected in electrode (8) and first electrode (9) connection under pump
Pump electrode device in one complete first is constituted afterwards, and this constitutes first in pump electrode device and external electrode (3) in first together
Group oxygen pump.
2. a kind of NOx sensor chip for pumping current adjustment according to claim 1, it is characterised in that: in described first
Diffusion admittance (14) are provided between pump electrode working chamber (13) in pump electrode working chamber (12) and second, pump electricity in described second
It is provided with pump top electrode (10) in second in pole working chamber (13), pumps lower electrode in second in pump linking electrode (15) and second
(16), under pump linking electrode (15) setting is pumped in pump top electrode (10) and second in second in described second electrode (16) it
Between, and pump top electrode (10) in second, pumped in pump linking electrode (15) and second after lower electrode (16) connect in second and constitute one
Pump electrode device in a complete second, and this in second pump electrode device second group of oxygen pump is constituted together with external electrode.
3. a kind of NOx sensor chip for pumping current adjustment according to claim 2, it is characterised in that: in described second
Pump electrode working chamber (13) bottom righthand side is provided with reaction electrode (17), is provided with reaction on the upper surface of the reaction electrode (17)
Electrode diffusion layer (18).
4. a kind of NOx sensor chip for pumping current adjustment according to claim 3, it is characterised in that: the chip base
The lower position that body (1) is located at pump electrode working chamber (13) in second is provided with reference cavity (19), is set in reference cavity (19)
It is equipped with reference electrode (20), the reference electrode (20) is communicated by reference cavity (19) with air.
5. a kind of NOx sensor chip for pumping current adjustment according to claim 4, it is characterised in that: the chip base
The lower position that body (1) is located at reference cavity (19) is provided with heating cavities (110), is provided in the heating cavities (110)
It heats electrode (21), is provided with insulating layer (22) on the upper surface of heating electrode (21), heating electrode (21)
Lower insulating layer (23) are provided on bottom surface.
6. a kind of NOx sensor chip for pumping current adjustment according to claim 1, it is characterised in that: the chip base
Body (1) is formed by stacking by multilayer zirconium oxide cast sheet.
7. a kind of NOx sensor chip for pumping current adjustment according to claim 1, it is characterised in that: cover on the surface
Cap rock (4) is made of zirconia material.
8. a kind of NOx sensor chip for pumping current adjustment according to claim 1, it is characterised in that: the diffusion barrier
Layer (5) is hindered to be made of porous zirconia material；The binder transition zone (6) is by zirconia material and diffusion barrier layer (5)
Aggregate be made by mixing according to 1:1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821916378.6U CN209148594U (en) | 2018-11-21 | 2018-11-21 | A kind of NOx sensor chip pumping current adjustment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821916378.6U CN209148594U (en) | 2018-11-21 | 2018-11-21 | A kind of NOx sensor chip pumping current adjustment |
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| Publication Number | Publication Date |
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| CN209148594U true CN209148594U (en) | 2019-07-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201821916378.6U Active CN209148594U (en) | 2018-11-21 | 2018-11-21 | A kind of NOx sensor chip pumping current adjustment |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109507262A (en) * | 2018-11-21 | 2019-03-22 | 温州百岸汽车零部件有限公司 | A kind of NOx sensor chip pumping current adjustment |
| CN111474230A (en) * | 2020-05-21 | 2020-07-31 | 江苏惟哲新材料有限公司 | Nitrogen oxygen sensor ceramic chip |
| CN112198206A (en) * | 2020-09-21 | 2021-01-08 | 苏州禾苏传感器科技有限公司 | Electrochemical gas sensor chip |
-
2018
- 2018-11-21 CN CN201821916378.6U patent/CN209148594U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109507262A (en) * | 2018-11-21 | 2019-03-22 | 温州百岸汽车零部件有限公司 | A kind of NOx sensor chip pumping current adjustment |
| CN111474230A (en) * | 2020-05-21 | 2020-07-31 | 江苏惟哲新材料有限公司 | Nitrogen oxygen sensor ceramic chip |
| CN112198206A (en) * | 2020-09-21 | 2021-01-08 | 苏州禾苏传感器科技有限公司 | Electrochemical gas sensor chip |
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Legal Events
| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200312 Address after: 325000 No.1, Jixiang Road, Tangxia Town, Ruian City, Wenzhou City, Zhejiang Province Patentee after: Zhejiang Baian Technology Co., Ltd Address before: 325000 No. 1 Jixiang Road, North Industrial Park, Tangxia Town, Ruian City, Wenzhou City, Zhejiang Province Patentee before: Wenzhou Baian Auto Parts Co., Ltd. |
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| TR01 | Transfer of patent right |