CN112795903A - Production process applied to tubular coating equipment - Google Patents
Production process applied to tubular coating equipment Download PDFInfo
- Publication number
- CN112795903A CN112795903A CN202011590655.0A CN202011590655A CN112795903A CN 112795903 A CN112795903 A CN 112795903A CN 202011590655 A CN202011590655 A CN 202011590655A CN 112795903 A CN112795903 A CN 112795903A
- Authority
- CN
- China
- Prior art keywords
- cleaning
- tubular
- gas
- carrier
- control device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000000576 coating method Methods 0.000 title claims abstract description 26
- 239000011248 coating agent Substances 0.000 title claims abstract description 25
- 238000004140 cleaning Methods 0.000 claims abstract description 315
- 238000000151 deposition Methods 0.000 claims abstract description 67
- 230000008021 deposition Effects 0.000 claims abstract description 67
- 238000011282 treatment Methods 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 27
- 239000007789 gas Substances 0.000 claims description 94
- 238000000034 method Methods 0.000 claims description 54
- 230000008569 process Effects 0.000 claims description 49
- 239000000126 substance Substances 0.000 claims description 41
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 33
- 239000012159 carrier gas Substances 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 239000012071 phase Substances 0.000 claims description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 238000005137 deposition process Methods 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 239000012808 vapor phase Substances 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 6
- 229910020323 ClF3 Inorganic materials 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 238000010926 purge Methods 0.000 claims 2
- 229910002804 graphite Inorganic materials 0.000 description 30
- 239000010439 graphite Substances 0.000 description 30
- 239000010408 film Substances 0.000 description 26
- 238000011109 contamination Methods 0.000 description 20
- 238000006243 chemical reaction Methods 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 230000009286 beneficial effect Effects 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 239000002253 acid Substances 0.000 description 6
- 238000011068 loading method Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000005086 pumping Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012806 monitoring device Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000033764 rhythmic process Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a production process applied to tubular coating equipment, which comprises the following steps: the substrate is subjected to deposition treatment through the deposition control device, the carrier to be cleaned is subjected to gas phase cleaning treatment through the cleaning control device, and after the gas phase cleaning treatment is finished, the cleaning carrier is subjected to saturation treatment through the saturation control device. After the carrier to be cleaned is conveyed to the tubular cleaning cavity through the conveying device, the carrier to be cleaned is subjected to gas phase cleaning treatment through the cleaning control device to obtain a cleaning carrier; after the gas-phase cleaning treatment is finished, the cleaning carrier is conveyed to the tubular saturated cavity through the conveying device, the saturation treatment is carried out on the cleaning carrier through the saturation control device, the carrier to be cleaned does not need to be disassembled and assembled, and therefore the production efficiency is further improved.
Description
Technical Field
The invention relates to the technical field of manufacturing of crystalline silicon solar cells, in particular to a production process of tubular coating equipment.
Background
In the solar cell manufacturing process, an antireflection film is formed on the surface of crystalline silicon by using a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, so that the light energy utilization rate can be improved by reducing the light reflectivity, and meanwhile, the antireflection film can also play a passivation effect and provide long-term protection for the cell, thereby being beneficial to the improvement of the photoelectric conversion efficiency. Therefore, the high-quality silicon nitride film plays a crucial role in improving the performance and quality of the crystalline silicon solar cell.
In the prior art, a graphite boat capable of holding tens or even hundreds of silicon wafers is generally fed into a quartz tube, and PECVD deposition is performed by exciting plasma in the quartz tube. Because most surfaces of the graphite boat are also exposed in a reaction environment, the deposition of the antireflection film is carried out on the surfaces of the silicon wafers and the exposed surfaces of the graphite boat, and the deposition layers on the surfaces of the graphite boat easily pollute the surfaces of the silicon wafers. Therefore, the graphite boat needs to be periodically maintained.
In the prior art, chemical methods are generally adopted to clean and maintain devices related to the PECVD process. For example, chinese patent application publication No. CN105742159A discloses a method for removing surface contamination of photovoltaic related devices, such as graphite boats and quartz tubes, by mixing acid and pure water. However, this cleaning method is off-line cleaning, and needs to soak the quartz tube or graphite boat in acid solution or water, which involves remote transportation, the process of disassembling and assembling the quartz tube, and complicated cleaning processes, and is not favorable for improving the production efficiency.
Therefore, there is a need to develop a new production process applied to a tubular coating device to solve the above problems in the prior art.
Disclosure of Invention
The invention aims to provide a production process applied to tubular coating equipment, which is used for carrying out online cleaning and saturation treatment on a carrier and is beneficial to improving the production efficiency.
In order to achieve the purpose, the tubular coating equipment comprises a transmission device, a tubular cleaning cavity provided with a cleaning control device and a tubular saturation cavity provided with a saturation control device, wherein the production process comprises the steps of providing a carrier to be cleaned; after the carrier to be cleaned is conveyed to the tubular cleaning cavity through the conveying device, carrying out gas-phase cleaning treatment on the carrier to be cleaned through the cleaning control device to obtain a cleaning carrier; after the gas-phase cleaning treatment is finished, the cleaning carrier is conveyed to the tubular saturated cavity through the conveying device, and then the cleaning carrier is subjected to saturation treatment through the saturation control device.
The production process applied to the tubular coating equipment has the beneficial effects that: after the carrier to be cleaned is conveyed to the tubular cleaning cavity through the conveying device, carrying out gas-phase cleaning treatment on the carrier to be cleaned through the cleaning control device to obtain a cleaning carrier; after the gas-phase cleaning treatment is finished, the cleaning carrier is conveyed to the tubular saturated cavity through the conveying device, the saturation treatment is carried out on the cleaning carrier through the saturation control device, the carrier to be cleaned does not need to be disassembled and assembled, and therefore the production efficiency is further improved.
Preferably, the temperature in the tubular saturated cavity is controlled to be 200-600 ℃, the pressure is controlled to be 0.2-0.4 kilopascal, the radio frequency power is controlled to be 10-40 kilowatts by the saturation control device, and the flow of the saturated gas conveyed into the tubular saturated cavity is controlled to be 5-30 standard liters per minute, so that a saturated layer is formed on the surface of the cleaning carrier. The beneficial effects are that: the deposition uniformity of the saturated layer is ensured.
Further preferably, the saturated gas includes silane and at least one of ammonia and nitrogen oxide.
Further preferably, the saturated gas further comprises a carrier gas, and the carrier gas is at least one of nitrogen, argon and oxygen.
Preferably, the gas phase cleaning treatment comprises a chemical gas phase cleaning treatment, the temperature in the tubular cleaning cavity is controlled to be 200-600 ℃, the pressure is controlled to be 0.1-67 kilopascal, and the flow rate of the cleaning gas is controlled to be 2-50 standard liters per minute by the cleaning control device, so as to perform the chemical gas phase cleaning treatment. The beneficial effects are that: the cleaning effect is ensured.
More preferably, the cleaning gas is HF or F2、Cl2And ClF3At least one of (1).
Further preferably, the cleaning gas further includes a carrier gas, and the carrier gas is at least one of nitrogen, argon and oxygen.
Preferably, the tubular cleaning cavity is further provided with a plasma generating device, the cleaning control device controls the temperature and the pressure in the tubular cleaning cavity and the flow rate of the cleaning gas introduced into the tubular cleaning cavity, and the plasma generating device converts the cleaning gas into plasma so as to perform the plasma chemical vapor cleaning treatment. The beneficial effects are that: the carrier to be cleaned does not need to be disassembled and assembled, so that the production efficiency is further improved.
Further preferably, the temperature in the tubular cleaning cavity is controlled to be 300-600 ℃, the pressure is controlled to be 0.1-0.6 kilopascal by the cleaning control device, the flow rate of the cleaning gas is 2-50 standard liters/minute, and the radio frequency power is controlled to be 10-40 kilowatts by the plasma generation device. The beneficial effects are that: the cleaning effect is ensured.
Further preferably, the cleaning gas contains at least two of carbon, nitrogen and fluorine.
Further preferably, the cleaning gas further includes a carrier gas, and the carrier gas is at least one of nitrogen, argon and oxygen.
Preferably, any one of the vapor phase cleaning process and the deposition process is performed through the tubular saturated chamber. The beneficial effects are that: the utilization rate of the tubular saturated cavity is improved.
Preferably, the tubular film coating equipment comprises a tubular deposition cavity provided with a deposition control device, a dielectric film is formed on the surface of an inner substrate of the tubular deposition cavity through the deposition control device, the number of any one of the tubular cleaning cavity and the tubular saturation cavity is at least 1, and the number of any one of the tubular cleaning cavity and the tubular saturation cavity is not more than the number of the tubular deposition cavity.
Drawings
FIG. 1 is a flow chart of a production process applied to a tubular coating device according to the present invention;
FIG. 2 is a schematic structural diagram of a tubular PECVD deposition apparatus according to an embodiment of the invention;
FIG. 3 is a schematic diagram of a tubular cleaning chamber of FIG. 2;
fig. 4 is another schematic structural diagram of the tubular cleaning chamber shown in fig. 2.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and similar words are intended to mean that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items.
In the prior art, in the process of forming a coated substrate by a deposition process performed by a tubular coating apparatus, such as a tubular PECVD deposition apparatus, since the substrate is loaded on a graphite boat, a deposition reaction inevitably occurs on the surface of the graphite boat while a dielectric film is deposited on the substrate. Considering that the cleaning degree of the surface of the graphite boat has great influence on the performance of the coated substrate, the graphite boat needs to be cleaned regularly.
Considering the influence of the disassembly and assembly of the graphite boat on the productivity and the energy consumption in the cleaning process, the cleaning and maintenance of the graphite boat generally can carry out cleaning treatment on the graphite boat when the surface pollution reaches a certain degree and the product quality is seriously influenced with great risk. Generally, taking the process of forming an antireflection film of 80-120 nm for each deposition reaction as an example, the graphite boat needs to be cleaned and maintained after the deposition times reach 55-80 times.
In the prior art, the graphite boat is usually required to be disassembled into a plurality of graphite plates, threaded connecting rods and other small parts for connection or reinforcement in cleaning and maintenance of the graphite boat, all the parts formed by disassembly are classified according to material types and are placed into different bearing vessels, and cleaning treatment is performed through different cleaning liquids. Taking graphite plates as an example, it is usually necessary to soak the carrier vessel and the graphite plates contained therein with an acid solution, such as a 20% hydrofluoric acid aqueous solution. Acid liquor has strong corrosivity, and a cleaning pool containing the acid liquor needs to be arranged far away from a cell production area.
In order to completely remove the pollution, the soaking time of the cleaning treatment in the prior art is usually not less than 6 hours; after the surface contamination is removed, the graphite plate is rinsed with pure water for a plurality of times until the hydrofluoric acid residue on the surface of the graphite plate is detected to be in accordance with the specification, and the time is usually not less than 4 hours. After the cleaning treatment of all parts is finished, low-temperature drying is carried out for about 12 hours, and then the parts are assembled again and the saturated plating boat is carried out, so that the parts can be used again; the large amount of acidic waste liquid generated from soaking and rinsing cannot be directly discharged, and must be recycled to prevent environmental pollution.
It can be seen that the negative impact of prior art cleaning and maintenance of graphite boats on productivity is significant, and the resulting energy consumption is also significant.
Moreover, the deposition process performed by the tubular PECVD apparatus requires the use of a vacuum apparatus including a vacuum pump and a pumping pipeline to maintain the pressure of the tubular deposition chamber, dust and some reactants generated by the deposition process can enter the pumping pipeline, and dust accumulation can occur if the cleaning is not performed for a long time, thereby causing the operation failure or even the damage of the vacuum pump.
Filters are commonly provided in the pumping circuit to intercept the accumulated dust, and such filters are generally cleaned every 1-2 months, plus replacement time, which is at least 2 hours down time for the corresponding tubular deposition chamber.
Aiming at the problems in the prior art, the embodiment of the invention provides a production process applied to tubular coating equipment, so as to carry out online cleaning and online saturation treatment on devices which can contact with plasma and comprise graphite boats, and the production process is favorable for improving the production efficiency.
The tubular coating equipment provided by the embodiment of the invention comprises a transmission device, a tubular deposition cavity provided with a deposition control device, a tubular cleaning cavity provided with a cleaning control device and a tubular saturation cavity provided with a saturation control device.
Referring to fig. 1, the production process of the embodiment of the present invention includes:
s1: conveying the carrier to be cleaned to the tubular cleaning cavity through the conveying device;
s2: carrying out gas-phase cleaning treatment on the carrier to be cleaned through the cleaning control device to obtain a cleaning carrier;
s3: and after the cleaning carrier is conveyed to the tubular saturated cavity through the conveying device, the cleaning carrier is subjected to saturation treatment through the saturation control device.
Fig. 2 is a schematic structural view of a tubular coating apparatus according to some embodiments of the present invention.
Referring to fig. 2, the tubular coating equipment 1 includes a tubular deposition chamber 13, a tubular cleaning chamber 14, a tubular saturation chamber 19 and a carrier 16, where the tubular cleaning chamber 14, the tubular deposition chamber 13 and the tubular saturation chamber 19 are disposed in a same working area 11, the tubular deposition chamber 13 is configured to accommodate the carrier 16, and perform a coating process on a substrate loaded on the carrier 16 through a coating control device; the tubular cleaning chamber 14 is used for performing gas-phase cleaning treatment on the carrier 16 which completes the film coating treatment and unloads the substrate through a cleaning control device; the tubular saturation chamber 19 is configured to perform the saturation treatment on the carrier 16 subjected to the gas phase cleaning treatment by using a saturation control device.
The tubular coating equipment 1 further comprises a loading area 12 adjacent to the working area 11, wherein the loading area 12 is provided with a transmission device 15 to drive the carrier 16 to enter or exit any one of the corresponding tubular deposition cavity 13, tubular cleaning cavity 14 and tubular saturation cavity 19, and to transmit the carrier 16 between the loading area 12 and a loading and unloading area (not shown).
In some embodiments, the carrier 16 is a graphite boat capable of holding at least 200 substrates. The transfer device 15 includes a robot arm and a robot arm control device to stably carry the graphite boat with a weight exceeding 25 kg. The specific implementation manner of the robot arm and the robot arm control device is well known to those skilled in the art, and will not be described herein.
Referring to fig. 2, the tubular deposition chamber 13, the tubular cleaning chamber 14, and the tubular saturation chamber 19 are connected to different vacuum control devices, which are respectively a coating vacuum control device 17, a first vacuum control device 181, and a second vacuum control device 182, so as to respectively control the vacuum degrees in the tubular deposition chamber 13, the tubular cleaning chamber 14, and the tubular saturation chamber 19.
In some embodiments of the present invention, the number of the tubular cleaning chambers 14 is at least 1 and less than the number of the tubular deposition chambers 13.
In some embodiments of the present invention, the ratio of the number of the tubular cleaning chambers 14 to the number of the tubular deposition chambers 13 is 1: 1-1: 11.
in some embodiments of the present invention, the number of the tubular saturation chambers 19 is at least 1 and less than the number of the tubular deposition chambers 13.
In some embodiments of the present invention, the ratio of the number of the tubular saturation chambers 19 to the number of the tubular deposition chambers 13 is 1: 1-1: 11.
in some specific embodiments of the present invention, the number ratio of the tubular deposition chamber 13 to any one of the tubular cleaning chamber 14 and the tubular saturation chamber 19 in one of the working areas 11 is 5: 1, reasonably considering good production rhythm and timely cleaning the polluted carrier.
In some embodiments of the present invention, any one of the tubular cleaning cavity 14 and the tubular saturation cavity 19 is disposed in one-to-one correspondence with the tubular deposition cavity 13, so as to be applied to a coating application scenario in which the carrier 16 is easily contaminated in a short time. For example, in the case where a dielectric film with a large thickness needs to be deposited on the surface of the substrate by the plating treatment.
Specifically, referring to fig. 2, the working area 11 is provided with 1 tubular cleaning chamber 14 and 4 tubular deposition chambers 13, and the 4 tubular deposition chambers 13 are stacked in the vertical direction of the ground. The tubular cleaning cavity 14 and the tubular saturation cavity 19 are stacked and stacked above 4 tubular deposition cavities 13 in the vertical direction of the ground. The coating vacuum control device 17 penetrates through the end face of each tubular deposition cavity 13 on the same side to communicate with the inside of each tubular deposition cavity 13.
In some embodiments of the present invention, the number of the tubular saturation chambers 19 is the same as the number of the tubular cleaning chambers 14 in one working area 11.
In some embodiments of the present invention, the substrate is any one of an N-type silicon wafer or a P-type silicon wafer, and the substrate is formed by performing any one or more of a texturing process, a diffusion process, an insulation polishing process, a thermal oxidation process, and a back passivation process on an original silicon wafer.
Fig. 3 is a schematic structural view of the tubular cleaning chamber shown in fig. 2.
Referring to fig. 2 and 3, the tubular cleaning chamber 14 is enclosed by opposing first and second end doors 21 and 22 and a cylindrical side wall 23 between the first and second end doors 21 and 22. The tubular cleaning chamber 14 has the same shape as the tubular deposition chamber 13.
In some embodiments, the volume of the tubular cleaning chamber 14 is not less than the volume of the tubular deposition chamber 13, so as to be able to accommodate at least one contaminated carrier 16.
In some embodiments of the present invention, referring to fig. 2, the tubular cleaning chamber 14 and the tubular deposition chamber 13 have the same shape and size, so that the tubular cleaning chamber 14 and the tubular deposition chamber 13 have the same volume.
Referring to fig. 3, the gas supply line 24, the first vacuum control unit 181 and the temperature control unit (not shown) constitute a cleaning control unit of the tubular cleaning chamber 14.
The temperature control device (not shown) is disposed on the cylindrical side wall 23, and the gas supply line 24 is disposed on the second end gate 22 to provide at least one cleaning gas to the tubular cleaning chamber 14, while the temperature control device (not shown) is disposed on the cylindrical side wall 23 to facilitate rapid temperature stabilization in the tubular cleaning chamber 14.
In some embodiments of the present invention, the gas supply line 24 is disposed at the first end gate 21.
In some embodiments of the present invention, the temperature control device comprises a heating element to rapidly and stably control the temperature in the tubular cleaning chamber 14. Specifically, the heating elements are resistance wires, lamps or radio frequency arranged on the cylindrical side wall 23. The specific implementation manner of the temperature control device is a conventional technical means of those skilled in the art, and is not described herein in detail.
Referring to fig. 3, the first vacuum control unit 181 is disposed at the second end gate 22 to control the vacuum degree in the tubular cleaning chamber 14. Specifically, the first vacuum control device 181 includes a vacuum pump 26 and a pumping channel 25, one end of the pumping channel 25 penetrates through the second end gate 22, and the other end is connected to the vacuum pump 26 to communicate with the inside of the tubular cleaning chamber 14.
In some embodiments, the gas supply line 24 is a single line for supplying a single cleaning gas or a mixture of cleaning gases into the tubular cleaning chamber 14.
In some embodiments of the present invention, the gas supply pipeline 24 is a plurality of pipelines, so that different single cleaning gases or carrier gases enter the tubular cleaning chamber 14 and then are mixed to form the mixed cleaning gas.
The gas-phase cleaning treatment of the embodiment of the invention means that the pollution layer is stripped from the surface of the device to be cleaned through the reaction between gaseous substances and the pollution layer so as to realize the cleaning function. Compared with the cleaning treatment by using acid liquor in the prior art, the gas-phase cleaning treatment is carried out in a closed space, and polluting waste liquid cannot be generated; in addition, the permeability of gaseous substances is superior to that of liquid substances, enabling a thorough and effective cleaning of the carrier 16 without disassembling the carrier 16; further, by adopting the vapor phase cleaning process, the tubular cleaning chamber 14 and the tubular deposition chamber 13 can be disposed in the working area 11 together, which saves the carrying time compared with the prior art, and the cleaning can be performed without loading and unloading the carrier 16, thereby saving the time for assembling and disassembling the carrier 16.
The saturation treatment in the embodiment of the present invention is to cover a uniform saturation layer on the surface of the carrier 16 subjected to the vapor cleaning treatment through a vapor deposition reaction, so that the carrier 16 has good flatness, which is beneficial to uniform distribution of an electric field of the carrier 16 during the subsequent coating treatment of the loaded substrate, and is beneficial to improving the coating quality of the substrate, and avoiding uneven coating or color difference.
In some embodiments of the present invention, the saturation layer is composed of any one of silicon nitride and silicon carbide.
In some embodiments of the present invention, the saturation layer formed by the saturation treatment has a plurality of bumps on the surface thereof, so as to ensure that the carrier surface subjected to the saturation treatment has good flatness.
In some embodiments of the present invention, the carrier 16 has at least 1 batch of substrates, and after at least one deposition process in the tubular deposition chamber 13, the substrates are transported out of the tubular deposition chamber 13 by the transport device 15 and the coated substrates formed each time are unloaded, and then transported into the tubular cleaning chamber 14 by the transport device 15 for the vapor phase cleaning process.
In some embodiments of the present invention, the gas phase cleaning process includes any one of a chemical gas phase cleaning process and a plasma chemical gas phase cleaning process.
Specifically, the temperature and pressure in the tubular cleaning cavity and the flow of the cleaning gas introduced into the tubular cleaning cavity are controlled by the cleaning control device, so that the chemical vapor cleaning treatment is performed.
In some embodiments of the present invention, the temperature in the tubular cleaning cavity is controlled by the cleaning control device to be 200-.
Specifically, the standard liters per minute of the embodiment of the present invention refers to the volume of gas per minute at the standard state. The temperature in the standard state is 0 degrees celsius and the ambient pressure is 1 atmosphere.
In some embodiments of the present invention, the cleaning control device controls the chemical vapor cleaning process to be not longer than 3 hours.
In some embodiments of the present invention, the cleaning control device controls the chemical vapor cleaning process to be not longer than 1 hour.
In some embodiments of the present invention, the duration of the chemical vapor cleaning process is controlled by the cleaning control device to be 15 to 180 minutes.
In some embodiments of the present invention, the duration of the chemical vapor cleaning process is controlled by the cleaning control device to be 15 to 90 minutes.
In some embodiments of the present invention, the cleaning gas is a single cleaning gas or a mixed cleaning gas.
In some embodiments of the present invention, the mixed cleaning gas enters the tubular cleaning chamber 14 through the gas supply line 24.
In some embodiments of the present invention, the number of the gas supply lines 24 is at least 2 and does not exceed the number of types of the respective gases that make up the mixed cleaning gas. The gases in each gas supply line 24 enter the tubular cleaning chamber and then join to form the mixed cleaning gas for the chemical reaction.
In some embodiments of the present invention, the single cleaning gas for performing the chemical reaction is HF, F2、Cl2And ClF3Any one of them.
In some embodiments of the present invention, the mixed cleaning gas for performing the chemical reaction is HF and F2、Cl2、 ClF3Any two of them.
In some embodiments of the present invention, the mixed cleaning gas for performing the chemical reaction is HF and F2、Cl2、 ClF3And a carrier gas. The carrier gas is at least one of nitrogen, argon and oxygen.
In some embodiments of the present invention, the thickness of the dielectric film formed by the deposition process is less than 200 nm.
Further, the dielectric film is composed of at least one of a passivation film and an antireflection film, the number of layers of the passivation film is at least 1, and the number of layers of the antireflection film is at least 1.
Furthermore, the constituent material of each layer of the anti-reflection film is any one of silicon nitride or silicon oxynitride, and the constituent material of each layer of the passivation film is any one of silicon oxide, silicon carbide and aluminum oxide.
In some embodiments of the invention, the antireflective film or the passivated film is a progressive film.
The process of the chemical vapor phase cleaning treatment will be specifically described with reference to example 1.
Referring to fig. 2 and 3, the carrier 16 loaded with a plurality of substrates completes the deposition treatment in the tubular deposition cavity 13, where the deposition treatment is specifically an antireflection deposition treatment, so as to form antireflection films with thicknesses of 80 to 120 nanometers on one to-be-plated surface of the substrate, and obtain a single-sided plated substrate, and the antireflection film is made of silicon nitride. After the carrier 16 is used for many times, a contamination layer with the main component of silicon nitride and the average thickness of 5 microns is formed on the surface.
After the carrier 16 completes the antireflection deposition process, the carrier 16 is transported out of the tubular deposition chamber 13 through the transport device 15 and transported to a wafer unloading area (not shown) to remove the substrate with the antireflection film deposited thereon from the carrier 16, so that the carrier 16 becomes an empty carrier.
When it is counted that the carriers 16 respectively load 60 batches of substrates and repeatedly enter and exit the tubular deposition chamber 13 to complete 60 times of antireflection deposition processing, the average thickness of the contamination layer on the surfaces of the carriers 16 is not less than 5 micrometers, the chemical vapor cleaning processing needs to be performed so as not to affect the quality of the substrates on which antireflection films are deposited, the carriers 16 loaded with 60 th batches of coated substrates are conveyed to the film loading area 12 through the conveying device 15 to unload the coated substrates, and then the carriers 16 are conveyed to the tubular cleaning chamber 14 through the conveying device 15.
Before the carrier 16 enters the tubular cleaning cavity 14, the reaction temperature of the tubular cleaning cavity 14, which is reached by the temperature control device (not shown in the figure), for performing the chemical vapor cleaning treatment is 600 ℃; after the carrier 16 enters the tubular cleaning cavity 14, closing the first end door 21 to isolate the interior of the tubular cleaning cavity 14 from the exterior, and then vacuumizing the tubular cleaning cavity 14 through the vacuum control device 18 until the air pressure is 0.4 kilopascal, wherein the time duration is 3 minutes; after the pressure in the tubular cleaning cavity 14 is stabilized, HF is introduced into the tubular cleaning cavity 14 through the gas supply pipeline 24 at a flow rate of 10 standard liters per minute as a single cleaning gas for 75 minutes to allow the HF to perform a sufficient chemical reaction with the contaminants, wherein the HF reacts with the silicon nitride to generate silicon tetrafluoride gas.
After the chemical vapor cleaning process is completed, the vacuum control device 18 is used to depressurize the tubular cleaning chamber 14, and simultaneously the silicon tetrafluoride gas and other contaminants, such as dust, etc., stripped from the carrier 16 are pumped away by the vacuum control load 18. The cleaned carrier is transported out of the tubular cleaning chamber 14 by the transport device 15, and then transported to a wafer unloading area (not shown) by the transport device 15 for saturation plating, and then a new substrate is loaded again.
Further, while the carrier 16 is cleaned by the chemical vapor cleaning, since the vacuum control load 18 is always maintaining the pressure in the tubular cleaning chamber 14, the cleaning gas can enter the vacuum control device 18 to effectively clean the vacuum control device 18, thereby saving the filter in the prior art.
In examples 2-5, the composition and average thickness of the contamination layer formed on the surface of the carrier 16, the cleaning temperature for performing the chemical vapor cleaning process, the pressure and cleaning time in the tubular cleaning chamber 14, and the cleaning gas, carrier gas and corresponding flow rate are shown in table 1.
TABLE 1
In the embodiment of table 1 using at least 2 cleaning gases and a carrier gas, the cleaning gas and the carrier gas are mixed through the same gas line and enter the tubular cleaning chamber 14.
In other embodiments of the invention using at least 2 cleaning gases and a carrier gas, different types of cleaning gases are introduced into the tubular cleaning chamber 14 through different gas lines.
In examples 6 to 8, the deposition process was an intrinsic deposition process and a dopant deposition process, and the contaminant composition of the carrier 16 was a silicon thin film of amorphous silicon, in which the silicon thin film of amorphous silicon was composed of an intrinsic layer and a dopant layer doped with phosphorus and boron, and surface atom doping was not less than 10 × 1015Pieces/cubic centimeter, with an average thickness of 1 micron.
The average thickness of the contamination layer, the cleaning temperature for performing the chemical vapor cleaning process, the pressure in the tubular cleaning chamber 14, the cleaning time, and the cleaning gas, carrier gas and corresponding flow rates used in examples 6-8 are shown in table 2.
TABLE 2
In examples 9 and 10, the contamination layer formed by the carrier 16 after deposition treatment was composed of silicon oxide, polysilicon, and silicon oxynitride. The average thickness of each contamination layer, the cleaning temperature for performing the chemical vapor cleaning process, the pressure and the cleaning time in the tubular cleaning chamber 14, and the cleaning gas, carrier gas and corresponding flow rate used are shown in table 3.
TABLE 3
For the specific implementation of the embodiments 2-10, please refer to the description of embodiment 1, which is not repeated herein.
Fig. 4 is another schematic structural diagram of the tubular cleaning chamber shown in fig. 2.
Referring to fig. 3 and 4, the tubular cleaning chamber shown in fig. 4 differs from the tubular cleaning chamber shown in fig. 3 in that: the cleaning control device (not shown) further includes a first electrode 31, a second electrode 32 and a plasma supply power system 33 to form a plasma generating device.
Specifically, the first electrode 31 and the second electrode 32 are disposed at the second end door 22, the plasma supply power system 33 is electrically connected to the first electrode 31 and the second electrode 32, so as to be detachably and fixedly connected to a first electrode interface (not shown) and a second electrode interface (not shown) of the carrier (not shown) through the first electrode 31 and the second electrode 32, respectively, and discharge to the inside of the tubular cleaning cavity 14, so as to form a plasma electric field between adjacent boat sheets of the carrier (not shown), the first electrode 31 and the second electrode 32 form positive and negative electrodes, and the cleaning gas entering the tubular cleaning cavity 14 becomes plasma, and removes a contamination layer of the carrier through a plasma reaction.
In some embodiments of the present invention, since the tubular cleaning chamber is provided with a plasma generating device, any one of the chemical vapor cleaning process, the plasma chemical vapor cleaning process, and the anti-reflective deposition process is performed through the tubular cleaning chamber.
In some embodiments of the present invention, the first electrode 31 and the second electrode 32 are disposed on the first end gate 21.
In some embodiments of the invention, the cleaning control device is used for controlling the temperature and the pressure in the tubular cleaning cavity and the flow rate of the cleaning gas introduced into the tubular cleaning cavity, and the plasma generation device is used for converting the cleaning gas into plasma so as to perform the plasma chemical vapor cleaning treatment, thereby being beneficial to further shortening the cleaning time.
Specifically, the temperature in the tubular cleaning cavity is controlled to be 600 ℃ at 300-.
In some embodiments of the present invention, the duration of the plasma chemical vapor cleaning process is controlled by the cleaning control device to be not more than 3 hours.
In some embodiments of the present invention, the duration of the plasma chemical vapor cleaning process is controlled by the cleaning control device to be not more than 1 hour.
In some embodiments of the present invention, the duration of the plasma chemical vapor cleaning process is controlled by the cleaning control device to be 15 to 180 minutes.
In some embodiments of the present invention, the cleaning gas for performing the plasma chemical vapor cleaning process comprises at least two of carbon, nitrogen, and fluorine.
Furthermore, the cleaning gas used in the plasma chemical gas phase cleaning treatment of the embodiment of the invention is non-toxic, so that the use safety is improved, and the cleaning process is more efficient and environment-friendly.
Some embodiments of the inventionWherein the cleaning gas for the plasma chemical vapor cleaning is a single cleaning gas and NF3、SF6、CF4、CHF3And C2F6Any one of them.
In some embodiments of the present invention, the cleaning gas used for the plasma chemical vapor cleaning is a mixed cleaning gas and is NF3、SF6、CF4、CHF3And C2F6At least two of them.
In some embodiments of the invention, the cleaning gas for the plasma reaction is NF3、SF6、CF4、CHF3And C2F6And the carrier gas. The carrier gas is at least one of nitrogen, argon and oxygen.
The process of the plasma chemical vapor cleaning treatment will be specifically described with reference to example 11.
Referring to fig. 2 and 4, embodiment 11 differs from embodiment 1 in the following specific technical solutions:
after the carrier 16 enters the tubular cleaning chamber 14 with an internal temperature of 600 degrees celsius, a first electrode interface (not shown) and a second electrode interface (not shown) of the carrier are electrically connected to the first electrode 31 and the second electrode 32 disposed on the second end door 22, respectively.
When the pressure in the tubular cleaning chamber 14 reaches 0.32 kPa, CF is supplied through the gas supply line 244As a single cleaning gas, the cleaning gas is delivered into the tubular cleaning chamber 14 at a flow rate of 10 standard liters/minute, and simultaneously, the plasma supply power system 33 discharges the cleaning gas into the tubular cleaning chamber 14 at a radio frequency power of 30 kilowatts, so that the single cleaning gas is ionized and converted into plasma and the contamination layer of the carrier 16 is removed through the plasma reaction. The time period for introducing the single cleaning gas is 30 minutes to complete the plasma reaction.
After the plasma reaction is finished, the discharge in the tubular cleaning cavity 14 is cut off by the plasma supply power system 33, and then the pressure of the tubular cleaning cavity 14 is released by the vacuum control device 18.
In examples 12-16, the composition and average thickness of the contaminant layer formed on the surface of the carrier 16, the cleaning temperature for performing the plasma chemical vapor cleaning process, the pressure inside the tubular cleaning chamber 14, the cleaning time, the rf power, and the cleaning gas and flow rate used are shown in table 4.
TABLE 4
In examples 17-21, the composition and average thickness of the contamination layer formed on the surface of the carrier 16, the cleaning temperature for performing the plasma chemical vapor cleaning process, the pressure inside the tubular cleaning chamber 14, the cleaning time, the rf power, and the cleaning gas used and the corresponding flow rate are shown in table 5.
TABLE 5
The composition of the contamination layer formed on the surface of the carrier 16 in examples 22 to 24 was as follows:
the contamination layer of example 22 was composed of silicon oxide, polysilicon, and silicon nitride; the contamination layer of example 23 was composed of silicon nitride, silicon oxide, and silicon oxynitride; the contamination layer of example 24 was composed of silicon nitride, silicon oxynitride, silicon oxide, polysilicon thin film, and aluminum oxide.
The average thickness of the contamination layer formed on the carrier 16, the cleaning temperature for performing the plasma chemical vapor cleaning process, the pressure in the tubular cleaning chamber 14, the cleaning time, the rf power, the cleaning gas used, and the corresponding flow rate are shown in table 6.
TABLE 6
In some embodiments of the present invention, referring to fig. 3, the gas supply line 24 is also used as a deposition gas supply line to provide at least one reactive gas into the tubular cleaning chamber 14 for the deposition process, so that the tubular cleaning chamber 14 can be used as a tubular deposition chamber.
Specifically, the processing method further includes performing the deposition process by the plasma generation device and the cleaning control device after the carrier loaded with the substrate is conveyed to the tubular cleaning chamber 14 by the conveying device 15.
In some embodiments of the present invention, the tubular cleaning chamber 14 and the tubular deposition chamber 13 have the same structure.
In some embodiments of the present invention, when the tubular cleaning chamber 14 is used as a tubular deposition chamber, a contamination layer is formed on the inner wall of the tubular cleaning chamber 14, and the carrier and the tubular cleaning chamber for performing the deposition process are simultaneously subjected to the vapor phase cleaning process by controlling the temperature in the tubular cleaning chamber 14 to be 300-.
In each of the embodiments in tables 1-6, when the tubular cleaning chamber 14 is used as a tubular deposition chamber, the time for performing the vapor phase cleaning process is prolonged, and for the specific embodiment and the corresponding cleaning time, please refer to table 7.
TABLE 7
In embodiments 1 to 24 of the present invention, the carrier to be cleaned is a graphite boat to be cleaned, most of the surface of the graphite boat cannot see the color of the graphite body because of the contamination layer covering the surface, and after cleaning, the surface of the carrier to be cleaned shows the color of the graphite body, which indicates that the carrier has been effectively cleaned and the performance of the dielectric film formed by subsequent deposition treatment is not affected.
The inner walls of the tubular cleaning cavities in embodiments 1 to 24 of the present invention are made of quartz before deposition treatment, and are in a translucent or transparent state. After a plurality of deposition treatments, the inner wall is mostly covered with a pollution layer, and the inner wall is in an opaque state. After the cleaning treatment, the inner wall of the tubular cleaning cavity is in the original semitransparent or transparent state again, which indicates that the tubular cleaning cavity is effectively cleaned and the performance of a dielectric film formed by the subsequent deposition treatment is not influenced.
In the embodiment of the invention, the temperature in the tubular saturated cavity is controlled to be 200-600 ℃, the pressure is controlled to be 0.2-0.4 kilopascal, the radio frequency power is controlled to be 10-40 kilowatts, and the flow of saturated gas conveyed into the tubular saturated cavity is controlled to be 5-30 standard liters per minute through the saturation control device, so that a saturated layer is formed on the surface of the cleaning carrier.
Further, the saturation control device controls the saturation treatment time not to exceed 60 minutes.
In the embodiments 25 to 29 of the present invention, the gas used for the saturation treatment, the corresponding flow rate, the pressure, the radio frequency power, the saturation time, the temperature of the cavity, and the composition and the thickness of the formed saturation layer are shown in table 8.
TABLE 8
In some embodiments of the present invention, any one of the chemical vapor cleaning process, the plasma chemical vapor cleaning process, and the deposition process is performed through the tubular saturated chamber.
In some embodiments of the present invention, the monitoring device is used to monitor the number of times the carrier is operated or the deposition of the contaminants on the surface of the carrier, so as to determine whether the carrier is transported into the tubular cleaning chamber by the transporting device for performing the vapor phase cleaning process.
Specifically, the monitoring device is an electrical control device, and the specific implementation manner of the electrical control device is a conventional technical means of those skilled in the art, which is not described herein again.
In some embodiments of the present invention, the monitoring device monitors the degree of contamination of the contamination layer of the carrier 16 to determine when the vapor phase cleaning process is required.
Although the embodiments of the present invention have been described in detail hereinabove, it is apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it is to be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention as described herein is capable of other embodiments and of being practiced or of being carried out in various ways.
Claims (13)
1. A production process applied to tubular coating equipment comprises the steps of providing a carrier to be cleaned, and is characterized in that:
the tubular coating equipment comprises a transmission device, a tubular cleaning cavity provided with a cleaning control device and a tubular saturation cavity provided with a saturation control device;
the processing method further comprises the following steps: after the carrier to be cleaned is conveyed to the tubular cleaning cavity through the conveying device, carrying out gas-phase cleaning treatment on the carrier to be cleaned through the cleaning control device to obtain a cleaning carrier;
after the gas-phase cleaning treatment is finished, the cleaning carrier is conveyed to the tubular saturated cavity through the conveying device, and then the cleaning carrier is subjected to saturation treatment through the saturation control device.
2. The production process as claimed in claim 1, wherein the temperature in the tubular saturated cavity is controlled to be 200-600 ℃, the pressure is controlled to be 0.2-0.4 kpa, the radio frequency power is controlled to be 10-40 kw, and the flow rate of the saturated gas delivered into the tubular saturated cavity is controlled to be 5-30 normal liters/min by the saturation control device, so that a saturated layer is formed on the surface of the cleaning carrier.
3. The production process of claim 2, wherein the saturated gas comprises silane and further comprises at least one of ammonia and nitrogen oxides.
4. The process of claim 3 wherein the saturated gas further comprises a carrier gas, the carrier gas being at least one of nitrogen, argon and oxygen.
5. The production process as claimed in claim 1, wherein the gas-phase cleaning process comprises a chemical gas-phase cleaning process, wherein the cleaning control device controls the temperature in the tubular cleaning chamber to be 200-600 ℃, the pressure to be 0.1-67 kPa, and the flow rate of the cleaning gas to be 2-50 standard liters per minute, so as to perform the chemical gas-phase cleaning process.
6. The process according to claim 5, wherein the cleaning gas is HF, F2、Cl2And ClF3At least one of (1).
7. The process of claim 6, wherein the purge gas further comprises a carrier gas, the carrier gas being at least one of nitrogen, argon, and oxygen.
8. The production process according to claim 5, wherein the tubular cleaning chamber is further provided with a plasma generation device, the cleaning control device is used for controlling the temperature and the pressure in the tubular cleaning chamber and the flow rate of the cleaning gas introduced into the tubular cleaning chamber, and the plasma generation device is used for converting the cleaning gas into plasma so as to perform the plasma chemical vapor cleaning treatment.
9. The production process as claimed in claim 8, wherein the temperature in the tubular cleaning chamber is controlled by the cleaning control device to be 300-600 ℃, the pressure is controlled to be 0.1-0.6 kPa, the flow rate of the cleaning gas is 2-50 standard liters/minute, and the radio frequency power is controlled by the plasma generation device to be 10-40 kilowatts.
10. The production process according to claim 8, wherein the cleaning gas contains at least two of elemental carbon, elemental nitrogen, and elemental fluorine.
11. The process of claim 10, wherein the purge gas further comprises a carrier gas, the carrier gas being at least one of nitrogen, argon, and oxygen.
12. The production process according to claim 1, wherein any one of the vapor phase cleaning process and the deposition process is performed through the tubular saturated chamber.
13. The treatment method according to claim 1, wherein the tubular coating equipment comprises a tubular deposition cavity provided with a deposition control device, a dielectric film is formed on the surface of an inner substrate of the tubular deposition cavity through the deposition control device, the number of any one of the tubular cleaning cavity and the tubular saturation cavity is at least 1, and the number of any one of the tubular cleaning cavity and the tubular saturation cavity is not more than the number of the tubular deposition cavities.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011590655.0A CN112795903A (en) | 2020-12-29 | 2020-12-29 | Production process applied to tubular coating equipment |
| CN202311237288.XA CN117286479A (en) | 2020-12-29 | 2020-12-29 | Tubular film plating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011590655.0A CN112795903A (en) | 2020-12-29 | 2020-12-29 | Production process applied to tubular coating equipment |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311237288.XA Division CN117286479A (en) | 2020-12-29 | 2020-12-29 | Tubular film plating equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112795903A true CN112795903A (en) | 2021-05-14 |
Family
ID=75805451
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311237288.XA Pending CN117286479A (en) | 2020-12-29 | 2020-12-29 | Tubular film plating equipment |
| CN202011590655.0A Pending CN112795903A (en) | 2020-12-29 | 2020-12-29 | Production process applied to tubular coating equipment |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311237288.XA Pending CN117286479A (en) | 2020-12-29 | 2020-12-29 | Tubular film plating equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN117286479A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102397859A (en) * | 2011-11-22 | 2012-04-04 | 镇江大全太阳能有限公司 | Graphite boat (frame) dry-type cleaning machine |
| CN103560171A (en) * | 2013-10-29 | 2014-02-05 | 宁夏银星能源股份有限公司 | Method for saturating solar cell graphite boats |
| CN107611220A (en) * | 2017-09-14 | 2018-01-19 | 东方日升新能源股份有限公司 | A kind of solar cell piece preparation method |
| CN108110083A (en) * | 2017-11-29 | 2018-06-01 | 江苏彩虹永能新能源有限公司 | A kind of graphite boat saturation process of solar cell |
| CN110468391A (en) * | 2019-09-20 | 2019-11-19 | 理想晶延半导体设备（上海）有限公司 | Tubular type depositing device |
| CN110643974A (en) * | 2019-09-23 | 2020-01-03 | 苏州迈正科技有限公司 | Tray return cleaning mechanism and method for cleaning tray |
-
2020
- 2020-12-29 CN CN202311237288.XA patent/CN117286479A/en active Pending
- 2020-12-29 CN CN202011590655.0A patent/CN112795903A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102397859A (en) * | 2011-11-22 | 2012-04-04 | 镇江大全太阳能有限公司 | Graphite boat (frame) dry-type cleaning machine |
| CN103560171A (en) * | 2013-10-29 | 2014-02-05 | 宁夏银星能源股份有限公司 | Method for saturating solar cell graphite boats |
| CN107611220A (en) * | 2017-09-14 | 2018-01-19 | 东方日升新能源股份有限公司 | A kind of solar cell piece preparation method |
| CN108110083A (en) * | 2017-11-29 | 2018-06-01 | 江苏彩虹永能新能源有限公司 | A kind of graphite boat saturation process of solar cell |
| CN110468391A (en) * | 2019-09-20 | 2019-11-19 | 理想晶延半导体设备（上海）有限公司 | Tubular type depositing device |
| CN110643974A (en) * | 2019-09-23 | 2020-01-03 | 苏州迈正科技有限公司 | Tray return cleaning mechanism and method for cleaning tray |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117286479A (en) | 2023-12-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112725766A (en) | Production method applied to tubular PECVD deposition equipment | |
| CN110299420B (en) | Deposition method of antireflection film of crystalline silicon solar cell | |
| US20110136286A1 (en) | Method of cleaning and forming a negatively charged passivation layer over a doped region | |
| CN102007565A (en) | Substrate processing system and substrate processing method | |
| US20090199901A1 (en) | Photovoltaic device comprising a sputter deposited passivation layer as well as a method and apparatus for producing such a device | |
| CN112542531A (en) | Silicon wafer pretreatment and heterojunction battery preparation method | |
| CN112159973A (en) | Device for preparing passivation film layer of Topcon battery and process flow thereof | |
| CN101764044B (en) | Method for pretreating technical cavity of plasma device | |
| US7588957B2 (en) | CVD process gas flow, pumping and/or boosting | |
| CN115548163A (en) | Reactive ion etching process for cleaning graphite boat for photovoltaic production | |
| CN111229736A (en) | Cleaning method of graphite boat for manufacturing solar cell | |
| CN113000487B (en) | Tubular cleaning equipment and photovoltaic coating system | |
| CN112670377A (en) | Heterojunction solar cell processing technology | |
| CN110311015B (en) | Thin film deposition method of crystalline silicon solar cell | |
| CN112813413B (en) | Production process applied to tubular PECVD deposition equipment | |
| CN112795903A (en) | Production process applied to tubular coating equipment | |
| CN117206274A (en) | Graphite boat plasma cleaning device and cleaning method | |
| CN112813420A (en) | Treatment method applied to tubular coating equipment | |
| CN112813412A (en) | Processing method applied to coating equipment | |
| EP2088630A1 (en) | Photovoltaic device comprising a sputter deposited passivation layer as well as method and apparatus for producing such a device | |
| CN112725768A (en) | Processing method applied to tubular PECVD deposition equipment | |
| CN116093205A (en) | Preparation method of tunneling oxidation passivation layer, TOPCon battery and preparation method | |
| CN114606478B (en) | Method for preparing ultrathin silicon oxide layer and passivation contact structure by tubular PECVD (plasma enhanced chemical vapor deposition) and passivation contact structure | |
| CN112795904A (en) | Production process applied to tubular equipment | |
| JP2006344883A (en) | Method of manufacturing solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |