CN112813413B

CN112813413B - Production process applied to tubular PECVD deposition equipment

Info

Publication number: CN112813413B
Application number: CN202011592646.5A
Authority: CN
Inventors: 戴虹; 黄志强; 王祥; 袁刚; 汤亮才; 彭海
Original assignee: Ideal Semiconductor Equipment Shanghai Co ltd
Current assignee: Ideal Semiconductor Equipment Shanghai Co ltd
Priority date: 2020-12-29
Filing date: 2020-12-29
Publication date: 2023-04-11
Anticipated expiration: 2040-12-29
Also published as: CN112813413A

Abstract

The invention provides a production process applied to tubular PECVD deposition equipment, which comprises the following steps: the carrier in the tubular type deposition cavity is driven to perform turnover movement through the turnover driving device, two surfaces to be plated of the substrate are made to form dielectric films through the deposition control device, and the carrier entering the tubular type cleaning cavity is subjected to gas phase cleaning treatment through the cleaning control device arranged in the tubular type cleaning cavity. According to the invention, the carrier can realize double-sided plating without entering and exiting the tubular deposition cavity for multiple times through the overturning motion, so that the production efficiency is improved; the carrier entering the tubular cleaning cavity is subjected to gas phase cleaning treatment through the cleaning control device arranged in the tubular cleaning cavity, and the carrier is not required to be disassembled and assembled, so that the production efficiency is further improved.

Description

Production process applied to tubular PECVD deposition equipment

Technical Field

The invention relates to the technical field of manufacturing of crystalline silicon solar cells, in particular to a production process applied to tubular PECVD deposition equipment.

Background

In the solar cell manufacturing process, an antireflection film is formed on the surface of crystalline silicon by using a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, so that the light energy utilization rate can be improved by reducing the reflectivity of light, and meanwhile, the antireflection film can play a passivation effect and provide long-term protection for the cell, thereby being beneficial to improving the photoelectric conversion efficiency. Therefore, the high-quality silicon nitride film plays a crucial role in improving the performance and quality of the crystalline silicon solar cell.

In the prior art, a graphite boat capable of holding tens or even hundreds of silicon wafers is generally fed into a quartz tube, and PECVD deposition is performed by exciting plasma in the quartz tube. As most surfaces of the graphite boat are also exposed in a reaction environment, the antireflection film is deposited on the surface of the silicon wafer, and is also deposited on the exposed surface of the graphite boat, and the deposition layer on the surface of the graphite boat easily causes pollution to the surface of the silicon wafer. Therefore, the graphite boat needs to be periodically maintained.

In the prior art, chemical methods are generally adopted to clean and maintain devices related to the PECVD process. For example, chinese patent application publication No. CN105742159A discloses a method for removing surface contamination of photovoltaic related devices, such as graphite boats and quartz tubes, by mixing acid and pure water. However, this cleaning method is off-line cleaning, and needs to soak the quartz tube or graphite boat in acid solution or water, which involves remote transportation, the process of disassembling and assembling the quartz tube, and complicated cleaning processes, and is not favorable for improving the production efficiency.

Therefore, there is a need to develop a new manufacturing process for a tubular PECVD deposition apparatus to solve the above problems of the prior art.

Disclosure of Invention

The invention aims to provide a production process applied to tubular PECVD deposition equipment, so as to clean a carrier on line and be beneficial to improving the production efficiency.

In order to achieve the above purpose, the tubular PECVD deposition equipment of the present invention comprises a transmission device and a tubular deposition chamber provided with a deposition control device, and the production process comprises:

s1: depositing the carrier loaded with the substrate in the tubular deposition cavity through the deposition control device to form a coated substrate;

s2: the carrier loaded with the coated substrate is carried out of the tubular deposition cavity through the transmission device, and then the coated substrate is unloaded, so that a carrier to be cleaned is obtained;

the tubular PECVD equipment also comprises a tubular cleaning cavity provided with a cleaning control device;

in the step S1, the carrier is driven by the turnover driving device to perform a turnover motion so as to enable two surfaces to be plated, which are opposite to each other, of the substrate to be plated to be in a state to be plated respectively, and then a dielectric film is formed on the surface to be plated in the state to be plated through the deposition treatment, wherein the dielectric film is composed of at least one of an antireflection film and a passivation film;

the production process further comprises a step S3, wherein the step S3 comprises the following steps: and after the carrier to be cleaned is conveyed to the tubular cleaning cavity through the conveying device, carrying out gas phase cleaning treatment on the carrier to be cleaned through the cleaning control device.

The production process applied to the tubular PECVD deposition equipment has the beneficial effects that: the turnover driving device drives the carrier to perform turnover movement so as to enable any one of two opposite surfaces to be plated of the substrate to be in a state to be plated, so that the carrier can be combined with the control of the deposition control device to enable the two surfaces to be plated of the substrate to form dielectric films respectively without entering and exiting the tubular deposition cavity for multiple times, the process flow is simplified, and the production efficiency is improved; the cleaning control device is used for carrying out gas phase cleaning treatment on the carrier to be cleaned in the tubular cleaning cavity, and the carrier to be cleaned does not need to be disassembled and assembled, so that the production efficiency is further improved.

Preferably, the gas phase cleaning process includes any one of a chemical gas phase cleaning process and a plasma chemical gas phase cleaning process.

Further preferably, the temperature in the tubular cleaning cavity for the chemical vapor phase cleaning treatment is controlled by the cleaning control device to be 200-600 ℃, the pressure is 0.1-67 kPa, and the flow rate of the used cleaning gas is 2-50 standard liters per minute. The beneficial effects are that: the carrier to be cleaned does not need to be disassembled and assembled, so that the production efficiency is further improved, and the cleaning effect is ensured.

Preferably, the tubular cleaning cavity is further provided with a plasma generating device, the cleaning control device is used for controlling the temperature in the tubular cleaning cavity to be 300-600 ℃, the pressure to be 0.1-0.6 kilopascal, the flow of used cleaning gas is 2-50 standard liters/minute, and the plasma generating device is used for controlling the radio frequency power to be 10-40 kilowatts so as to carry out the plasma chemical gas phase cleaning treatment. The beneficial effects are that: the carrier to be cleaned does not need to be disassembled and assembled, so that the production efficiency is further improved, and the cleaning effect is ensured.

Preferably, the cleaning gas used for the chemical vapor cleaning is HF or F ₂ 、Cl ₂ And ClF ₃ Wherein the cleaning gas used for the plasma chemical vapor cleaning is NF ₃ 、SF ₆ 、CF ₄ 、CHF ₃ And C ₂ F ₆ At least one of (1).

Further preferably, at least one of the cleaning gas used for performing the chemical vapor cleaning and the cleaning gas used for performing the plasma chemical vapor cleaning further contains at least one of nitrogen gas, argon gas, and oxygen gas.

Preferably, any one of the chemical vapor cleaning process and the deposition process is performed through the tubular cleaning chamber.

Further preferably, the tubular cleaning cavity is further provided with the turnover driving device, and the carrier is driven by the turnover driving device to perform the turnover motion.

Further preferably, the ratio of the number of the tubular cleaning cavities to the number of the tubular deposition cavities is 1:1-1:11.

preferably, the substrate is any one of an N-type silicon wafer or a P-type silicon wafer, and the substrate is formed by performing any one or more of a texturing process, a diffusion process, an insulation polishing process, a thermal oxidation process and a back passivation process on an original silicon wafer.

Preferably, the thickness of the dielectric film is less than 200 nm.

Further preferably, an antireflection film is formed on one surface to be plated of the substrate to be plated, a passivation film and the antireflection film are formed on the other surface to be plated, the antireflection film is composed of at least one antireflection layer, and the passivation film is composed of at least one passivation layer.

Further preferably, the antireflection layer is made of any one of silicon nitride, silicon oxide, silicon oxynitride and silicon carbide, and the passivation layer is made of aluminum oxide.

Further preferably, the antireflection film or the passivation film is a progressive film.

Drawings

FIG. 1 is a flow chart of a manufacturing process applied to a tubular PECVD deposition apparatus according to an embodiment of the present invention;

FIG. 2 is a schematic structural diagram of a tubular PECVD deposition apparatus according to an embodiment of the invention;

FIG. 3 is a schematic diagram of a tubular cleaning chamber shown in FIG. 2;

FIG. 4 is another schematic structural view of the tubular cleaning chamber shown in FIG. 2;

FIG. 5 is a schematic view of the tubular deposition chamber and carrier shown in FIG. 2;

FIG. 6 is a schematic view of the carrier of FIG. 2 with a plurality of substrates according to some embodiments of the present invention in operation;

fig. 7 is a schematic view showing an operation state of the base plate shown in fig. 6 in the substrate carrier part.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and similar words are intended to mean that the element or item preceding the word comprises the element or item listed after the word and its equivalent, but not the exclusion of other elements or items.

In the prior art, in the process of forming a coated substrate by a deposition process through a tubular PECVD device, as the substrate is loaded on a graphite boat, a deposition reaction is inevitably generated on the surface of the graphite boat while a dielectric film is deposited on the substrate. Considering that the cleaning degree of the surface of the graphite boat has great influence on the performance of the coated substrate, the graphite boat needs to be cleaned regularly.

Considering the influence of the disassembly and assembly of the graphite boat on the productivity and the energy consumption in the cleaning process, the cleaning and maintenance of the graphite boat generally can carry out cleaning treatment on the graphite boat when the surface pollution reaches a certain degree and the product quality is seriously influenced with great risk. Generally, taking the process of forming an antireflection film of 80-120 nm for each deposition reaction as an example, the graphite boat needs to be cleaned and maintained after the deposition times reach 55-80 times.

In the prior art, the graphite boat is usually required to be disassembled into a plurality of graphite plates, threaded connecting rods and other small parts for connection or reinforcement in cleaning and maintenance of the graphite boat, all the parts formed by disassembly are classified according to material types and are placed into different bearing vessels, and cleaning treatment is performed through different cleaning liquids. Taking graphite plates as an example, it is usually necessary to soak the carrier vessel and the graphite plates contained therein with an acid solution, such as a 20% hydrofluoric acid aqueous solution. The acidizing fluid has strong corrosivity, and the washing pond that holds the acidizing fluid must keep away from the regional setting of cell piece production.

In order to thoroughly remove the pollution, the soaking time of the cleaning treatment in the prior art is usually not less than 6 hours; after the surface pollution is removed, rinsing the graphite plate for multiple times by using pure water until the hydrofluoric acid residue on the surface of the graphite plate is detected to be in accordance with the specification, wherein the time is usually not less than 4 hours. After the cleaning treatment of all parts is finished, low-temperature drying is carried out for about 12 hours, and then the parts are assembled again and the saturated plating boat is carried out, so that the parts can be used again; the large amount of acidic waste liquid generated from soaking and rinsing cannot be directly discharged, and must be recycled to prevent environmental pollution.

It can be seen that the negative impact of prior art cleaning and maintenance of graphite boats on productivity is significant, and the resulting energy consumption is also significant.

Moreover, the deposition process performed by the tubular PECVD apparatus requires a vacuum apparatus including a vacuum pump and a pumping pipeline to maintain the pressure of the tubular deposition chamber, and dust and some reactants generated by the deposition process can enter the pumping pipeline, and dust can accumulate if the deposition process is not cleaned for a long time, thereby causing operation failure or even damage of the vacuum pump.

Filters are commonly provided in the pumping circuit to intercept the accumulated dust, and such filters are generally cleaned every 1-2 months, plus replacement time, which is at least 2 hours down time for the corresponding tubular deposition chamber.

Aiming at the problems in the prior art, the embodiment of the invention provides a production process applied to a tubular PECVD deposition device, so as to carry out online cleaning on devices which comprise graphite boats and can contact with plasma, and the production process is favorable for improving the production efficiency.

The tubular PECVD deposition equipment comprises a transmission device, a tubular deposition cavity provided with a deposition control device and a turnover driving device, and a tubular cleaning cavity provided with a cleaning control device.

Referring to fig. 1, the production process includes:

s1: the carrier is driven by the overturning driving device to perform overturning motion so as to enable two opposite surfaces to be plated of the substrate to be in a state to be plated respectively, and then a dielectric film is formed on the surfaces to be plated in the state to be plated through deposition treatment;

s3: and after the carrier to be cleaned is conveyed to the tubular cleaning cavity through the conveying device, carrying out gas phase cleaning treatment on the carrier to be cleaned through the cleaning control device.

In step S1 of the embodiment of the present invention, the dielectric film is composed of at least one of an antireflection film and a passivation film.

In some embodiments of the present invention, a dielectric film formed on one surface to be plated of the substrate is composed of a nitrogen element, at least one of an oxygen element and a carbon element, an aluminum element, and a silicon element, and a dielectric film formed on the other surface to be plated is composed of a nitrogen element, at least one of an oxygen element, and a silicon element.

FIG. 2 is a schematic structural view of a tubular PECVD deposition apparatus in accordance with some embodiments of the present invention.

Referring to fig. 2, the tubular PECVD deposition apparatus 1 includes a tubular deposition chamber 13, a tubular cleaning chamber 14 and a carrier 16, wherein the tubular cleaning chamber 14 and the tubular deposition chamber 13 are disposed in the same working area 11, the tubular deposition chamber 13 is configured to accommodate the carrier 16, and perform an anti-reflective deposition process on a substrate loaded on the carrier 16 by a deposition control device; the tubular cleaning cavity 14 is used for performing gas phase cleaning treatment on the inside of the tubular cleaning cavity 14 and the carrier entering the tubular cleaning cavity 14 through a cleaning control device.

The tubular PECVD deposition equipment 1 further comprises a slide area 12 adjacent to the working area 11, wherein the slide area 12 is provided with a transmission device 15 to drive the carrier 16 to enter and exit the tubular deposition cavity 13 or the tubular cleaning cavity 14, and to transmit the carrier 16 between the slide area 12 and a loading and unloading area (not shown).

In some embodiments, the carrier 16 is a graphite boat capable of holding at least 200 substrates. The conveying device 15 comprises a mechanical arm and a mechanical arm control device so as to stably carry the graphite boat with the weight of more than 25 kilograms. The specific implementation manner of the robot arm and the robot arm control device is well known to those skilled in the art, and will not be described herein.

In some embodiments of the present invention, the transport device 15 further comprises a carrying device and a handling device.

Specifically, the carrier device transports the carrier or the carrier loaded with the coated substrate between the carrier area 12 and the loading and unloading area. The specific implementation manner of the carrying device is well known to those skilled in the art, and will not be described herein.

Specifically, the loading and unloading device loads the substrate on the carrier 16 or unloads the coated substrate from the carrier 16. The specific implementation of the loading and the unloading is well known to those skilled in the art, and will not be described herein.

Referring to fig. 1, the tubular deposition chamber 17 and the tubular cleaning chamber 14 are connected to different vacuum control devices, namely, a deposition vacuum control device 17 and a vacuum control device 18, to control the vacuum degrees in the tubular deposition chamber 17 and the tubular cleaning chamber 14, respectively.

In some embodiments of the present invention, the number of the tubular cleaning chambers 14 is at least 1 and less than the number of the tubular deposition chambers 13.

In some embodiments of the present invention, the ratio of the number of the tubular cleaning chambers to the number of the tubular deposition chambers is 1:1-1:11.

in some specific embodiments of the present invention, the number ratio of the tubular deposition chambers 13 to the tubular cleaning chambers 14 in one working area 11 is 5:1, reasonably considering good production takt and timely cleaning the carrier to be cleaned.

In some embodiments of the present invention, the tubular cleaning chambers 14 and the tubular deposition chambers 13 are disposed in a one-to-one correspondence, so as to be applied to PECVD application scenarios where the carrier 16 is easily contaminated in a short time. For example, at least one of a case where an antireflection film having a large thickness needs to be deposited on the substrate surface by the antireflection deposition treatment and a case where a passivation film having a large thickness needs to be formed by a passivation deposition treatment.

Specifically, referring to fig. 2, the working area 11 is provided with 1 tubular cleaning chamber 14 and 4 tubular deposition chambers 13, and 4 tubular deposition chambers 13 are stacked in the vertical direction of the ground. The tubular cleaning chambers 14 are stacked above 4 tubular deposition chambers 13 in the vertical direction of the floor. The deposition vacuum control device 17 penetrates through the end face of each tubular deposition cavity 13 on the same side to communicate with the inside of each tubular deposition cavity 13.

In some embodiments of the present invention, the substrate is any one of an N-type silicon wafer or a P-type silicon wafer, and the substrate is formed by performing any one or more of a texturing process, a diffusion process, an insulation polishing process, a thermal oxidation process, and a back passivation process on an original silicon wafer.

Fig. 3 is a schematic structural view of the tubular cleaning chamber shown in fig. 2.

Referring to fig. 2 and 3, the tubular cleaning chamber 14 is enclosed by first and second

opposing end doors

21 and 22, and a first cylindrical sidewall 23 between the first and

second end doors

21 and 22. The tubular cleaning chamber 14 has the same shape as the tubular deposition chamber 13.

In some embodiments of the present invention, the volume of the tubular cleaning chamber 14 is not less than the volume of the tubular deposition chamber 13, so as to accommodate at least one carrier to be cleaned.

In some embodiments of the present invention, referring to fig. 2, the tubular cleaning chamber 14 and the tubular deposition chamber 13 have the same shape and size, so that the tubular cleaning chamber 14 and the tubular deposition chamber 13 have the same volume.

Referring to fig. 3, the gas supply line 24, the vacuum control device 18 and the temperature control device (not shown) constitute a cleaning control device of the tubular cleaning chamber 14.

The temperature control device (not shown) is disposed on the first cylindrical sidewall 23, and the cleaning gas supply line 24 is disposed on the second end gate 22, so as to provide at least one cleaning gas to the tubular cleaning chamber 14, while not affecting the setting of the temperature control device (not shown) on the first cylindrical sidewall 23, so as to facilitate rapid temperature stabilization in the tubular cleaning chamber 14.

In some embodiments of the present invention, the gas supply line 24 is disposed at the first end gate 21.

In some embodiments of the present invention, the temperature control device comprises a heating element to rapidly and stably control the temperature in the tubular cleaning chamber 14. Specifically, the heating element is a resistance wire, a lamp tube or a radio frequency arranged on the first cylindrical sidewall 23. The specific implementation manner of the temperature control device is a conventional technical means of those skilled in the art, and is not described herein in detail.

Referring to FIG. 3, the vacuum control device 18 is disposed at the second end gate 22 to control the vacuum level in the tubular cleaning chamber 14. Specifically, the vacuum control device 18 includes a vacuum pump 26 and a pumping channel 25, one end of the pumping channel 25 penetrates through the second end door 22, and the other end of the pumping channel 25 is connected to the vacuum pump 26 to communicate with the interior of the tubular cleaning chamber 14.

In some embodiments, the gas supply line 24 is a single line for supplying a single cleaning gas or a mixture of cleaning gases into the tubular cleaning chamber 14.

In some embodiments of the present invention, the cleaning gas supply line 24 includes a plurality of lines, so that different single cleaning gases or carrier gases enter the tubular cleaning chamber 14 and then are mixed to form the mixed cleaning gas.

The gas-phase cleaning treatment of the embodiment of the invention means that the pollution layer is stripped from the surface of the device to be cleaned through the reaction between gaseous substances and the pollution layer so as to realize the cleaning function. Compared with the cleaning treatment by using acid liquor in the prior art, the gas-phase cleaning treatment is carried out in a closed space, and no polluting waste liquid is generated; in addition, the permeability of the gaseous substance is better than that of the liquid substance, and the carrier to be cleaned can be thoroughly and effectively cleaned under the condition that the carrier to be cleaned is not disassembled; further, due to the adoption of the gas phase cleaning treatment, the tubular cleaning cavity 14 and the tubular deposition cavity 13 can be arranged in the working area 11 together, so that compared with the prior art, the carrying time is saved, the cleaning can be carried out without loading and unloading the carrier to be cleaned, and the dismounting time can be further saved.

In some embodiments of the present invention, the carrier 16 has at least 1 batch of substrates, which are transported out of the tubular deposition chamber 13 by the transport device 15 after the anti-reflective deposition process is performed in the tubular deposition chamber 13 at least once, and the coated substrates formed each time are unloaded, and then transported into the tubular cleaning chamber 14 by the transport device 15 to perform the vapor cleaning process.

In some embodiments of the present invention, the gas phase cleaning process includes any one of a chemical gas phase cleaning process and a plasma chemical gas phase cleaning process.

Specifically, the temperature and pressure in the tubular cleaning cavity and the flow of the cleaning gas introduced into the tubular cleaning cavity are controlled by the cleaning control device, so that the chemical vapor cleaning treatment is performed.

In some embodiments of the present invention, the temperature in the tubular cleaning cavity is controlled to be 200-600 ℃, the pressure is controlled to be 0.1-67 kpa, and the flow rate of the cleaning gas is controlled to be 2-50 standard liters per minute by the cleaning control device, so as to effectively clean the carrier to be cleaned.

Specifically, the standard liters per minute of the embodiment of the present invention refers to the volume of gas per minute at the standard state. The temperature in the standard state is 0 degrees celsius and the ambient pressure is 1 atmosphere.

In some embodiments of the present invention, the cleaning control device controls the chemical vapor cleaning process to be not longer than 3 hours.

In some embodiments of the present invention, the cleaning control device controls the chemical vapor cleaning process to be not longer than 1 hour.

In some embodiments of the present invention, the duration of the chemical vapor cleaning process is controlled by the cleaning control device to be 15 to 180 minutes.

In some embodiments of the present invention, the duration of the chemical vapor cleaning process is controlled by the cleaning control device to be 15 to 90 minutes.

In some embodiments of the present invention, the cleaning gas is a single cleaning gas or a mixed cleaning gas.

In some embodiments of the present invention, the mixed cleaning gas enters the tubular cleaning chamber 14 through the gas supply line 24.

In some embodiments of the present invention, the number of the gas supply lines 24 is at least 2 and does not exceed the number of types of the respective gases that make up the mixed cleaning gas. The gases in the gas supply lines 24 enter the tubular cleaning chamber and then join to form the mixed cleaning gas for the chemical vapor cleaning reaction.

In some embodiments of the present invention, the single cleaning gas for performing the chemical reaction is HF, F ₂ 、Cl ₂ And ClF ₃ Any one of them.

In some embodiments of the present invention, the mixed cleaning gas for performing the chemical reaction is HF and F ₂ 、Cl ₂ 、ClF ₃ Any two of them.

In some embodiments of the present invention, the mixed cleaning gas for performing the chemical reaction is HF and F ₂ 、Cl ₂ 、ClF ₃ And a carrier gas. The carrier gas is at least one of nitrogen, argon and oxygen.

In some embodiments of the present invention, the dielectric film has a thickness of less than 200 nm.

Specifically, an antireflection film is formed on one surface to be plated of the substrate to be plated, a passivation film and the antireflection film are formed on the other surface to be plated, the antireflection film is composed of at least one antireflection layer, and the passivation film is composed of at least one passivation layer.

Furthermore, the antireflection layer is made of any one of silicon nitride, silicon oxide, silicon oxynitride or silicon carbide, and the passivation layer is made of aluminum oxide.

Further, the antireflection film or the passivation film is a progressive film.

In some embodiments of the present invention, the deposition control device is used to control the temperature in the tubular deposition chamber to be 400-600 ℃, the pressure to be 500-3000 μm hg, the flow rate of the reaction gas introduced into the tubular deposition chamber to be 2-2000 standard liters per minute, the flow rate of the compensation gas to be 0-30 standard liters per minute, the radio frequency power to be 5000-20000 watts, and the deposition time per time is not more than 15 minutes, so as to form the antireflection film with a thickness of less than 200 nm by the antireflection deposition treatment. The reaction gas and the compensation gas together constitute a deposition gas, and the specific operation method is a conventional technical means of those skilled in the art, and is not described herein.

In some embodiments of the invention, the reactant gas is composed of silane and any one of ammonia and nitrous oxide, and the compensating gas is nitrogen (N) ₂ ) Helium (He), or argon (Ar) to form a silicon nitride anti-reflective film.

The process of the chemical vapor phase cleaning treatment will be specifically described with reference to example 1.

Referring to fig. 2 and 3, the carrier 16 loaded with a plurality of substrates performs an anti-reflective deposition process and a passivation deposition process in the tubular deposition chamber 13 to complete the deposition processes, and forms a dielectric film with a thickness of 80-120 nm and formed by laminating silicon nitride and aluminum oxide on one surface to be plated of the substrate, and forms a dielectric film with a thickness of 80-120 nm and composed of silicon nitride on the other surface to be plated. During the deposition treatment, a contamination layer with silicon nitride and aluminum oxide as main components and an average thickness of 6 μm was also formed on the surface of the carrier.

After the carrier 16 completes the deposition process, the tube-type deposition chamber 13 is transported out by the transport device 15 to a wafer unloading area (not shown) to remove the substrate with the deposited anti-reflective film from the carrier 16, so that the carrier 16 becomes an empty carrier.

When it is counted that the carriers 16 respectively load 60 batches of substrates and repeatedly enter and exit the tubular deposition chamber 13 to complete 60 times of deposition treatment, the average thickness of the contamination layer on the surfaces of the carriers 16 is not less than 6 micrometers, the chemical vapor cleaning treatment needs to be performed so as not to affect the quality of the deposition substrates, the carriers 16 loaded with 60 th batches of coated substrates are conveyed to the loading area 12 through the conveying device 15 to unload the coated substrates, and then the carriers 16 are conveyed to the tubular cleaning chamber 14 through the conveying device 15.

Before the carrier 16 enters the tubular cleaning cavity 14, the reaction temperature of the tubular cleaning cavity 14, which is reached by the temperature control device (not shown in the figure), for performing the chemical vapor cleaning treatment is 600 ℃; after the carrier 16 enters the tubular cleaning cavity 14, closing the first end door 21 to isolate the interior of the tubular cleaning cavity 14 from the exterior, and then vacuumizing the tubular cleaning cavity 14 through the vacuum control device 18 until the air pressure is 0.4 kilopascal, wherein the time duration is 3 minutes; after the pressure in the tubular cleaning chamber 14 is stabilized, HF is introduced into the tubular cleaning chamber 14 through the gas supply line 24 at a flow rate of 10 standard liters per minute as a single cleaning gas for 90 minutes to allow sufficient chemical reaction between HF and contaminants to form gaseous substances.

After the chemical vapor cleaning process is completed, the vacuum control device 18 is used to depressurize the tubular cleaning chamber 14, so that silicon tetrafluoride gas and other contaminants, such as dust, stripped from the carrier 16 can be removed by the vacuum control device 18 while the pressure is being relieved. The cleaned carrier is transported out of the tubular cleaning chamber 14 by the transport device 15, and then transported to a wafer unloading area (not shown) by the transport device 15 for saturation plating, and then a new substrate is loaded again.

Further, while the carrier 16 is cleaned by the chemical vapor cleaning, since the vacuum control load 18 is always maintaining the pressure in the tubular cleaning chamber 14, the cleaning gas can enter the vacuum control device 18 to effectively clean the vacuum control device 18, thereby saving the filter in the prior art.

In some embodiments of the present invention, in which at least 2 cleaning gases are used, all cleaning gases are mixed through the same gas line and enter the tubular cleaning chamber 14.

In other embodiments of the invention using at least 2 cleaning gases and a carrier gas, different types of cleaning gases are introduced into the tubular cleaning chamber 14 through different gas lines.

Fig. 4 is another schematic structural diagram of the tubular cleaning chamber shown in fig. 2.

Referring to fig. 3 and 4, the tubular cleaning chamber shown in fig. 4 differs from the tubular cleaning chamber shown in fig. 2 in that: the cleaning control device (not shown) further includes a first electrode 31, a second electrode 32 and a plasma supply power system 33 to form a plasma generating device.

Specifically, the first electrode 31 and the second electrode 32 are disposed at the second end door 22, the plasma supply power system 33 is electrically connected to the first electrode 31 and the second electrode 32, so as to be detachably and fixedly connected to a first electrode interface (not shown) and a second electrode interface (not shown) of the carrier (not shown) through the first electrode 31 and the second electrode 32, respectively, and discharge to the inside of the tubular cleaning cavity 14, so as to form a plasma electric field between adjacent boat sheets of the carrier (not shown), the first electrode 31 and the second electrode 32 form positive and negative electrodes, and the cleaning gas entering the tubular cleaning cavity 14 becomes plasma, and removes a contamination layer of the carrier through a plasma reaction.

In some embodiments of the present invention, the tubular cleaning chamber is provided with a plasma generating device to perform at least one of the chemical vapor cleaning process, the plasma chemical vapor cleaning process and the deposition process through the tubular cleaning chamber.

In some embodiments of the present invention, the first electrode 31 and the second electrode 32 are disposed on the first end gate 21.

In some embodiments of the invention, the cleaning control device is used for controlling the temperature and the pressure in the tubular cleaning cavity and the flow rate of the cleaning gas introduced into the tubular cleaning cavity, and the plasma generation device is used for converting the cleaning gas into plasma so as to perform the plasma chemical vapor cleaning treatment, thereby being beneficial to further shortening the cleaning time.

Specifically, the temperature in the tubular cleaning cavity is controlled to be 300-600 ℃ through the cleaning control device, the pressure is controlled to be 0.1-0.6 kilopascal, the flow of the cleaning gas is 2-50 standard liters per minute, and the radio frequency power is controlled to be 10-40 kilowatts through the plasma generating device.

In some embodiments of the present invention, the duration of the plasma chemical vapor cleaning process is controlled by the cleaning control device to be not more than 3 hours.

In some embodiments of the present invention, the duration of the plasma chemical vapor cleaning process is controlled by the cleaning control device to be not more than 1 hour.

In some embodiments of the present invention, the duration of the plasma chemical vapor cleaning process is controlled by the cleaning control device to be 15 to 180 minutes.

In some embodiments of the present invention, the cleaning gas for performing the plasma chemical vapor cleaning process comprises at least two of carbon, nitrogen, and fluorine.

Furthermore, the cleaning gas used in the plasma chemical gas phase cleaning treatment of the embodiment of the invention is non-toxic, so that the use safety is improved, and the cleaning process is more efficient and environment-friendly.

In some embodiments of the present invention, the cleaning gas used for the plasma chemical vapor cleaning process is a single cleaning gas and is NF ₃ 、SF ₆ 、CF ₄ 、CHF ₃ And C ₂ F ₆ Any one of them.

In some embodiments of the present invention, the cleaning gas used for the plasma chemical vapor cleaning is a mixed cleaning gas and is NF ₃ 、SF ₆ 、CF ₄ 、CHF ₃ And C ₂ F ₆ At least two of them.

In some embodiments of the invention, the cleaning gas for the plasma reaction is NF ₃ 、SF ₆ 、CF ₄ 、CHF ₃ And C ₂ F ₆ And the carrier gas. The carrier gas is at least one of nitrogen, argon and oxygen.

The process of the plasma chemical vapor cleaning treatment will be specifically described with reference to example 2.

Referring to fig. 2 and 4, the specific technical solutions of embodiment 2 and embodiment 1 are different in that:

after the carrier 16 enters the tubular cleaning chamber 14 at an internal temperature of 600 degrees celsius, a first electrode port (not shown) and a second electrode port (not shown) of the carrier are electrically connected to the first electrode 31 and the second electrode 32 disposed on the second end door 22, respectively.

When the pressure in the tubular cleaning chamber 14 reaches 0.32 kPa, CF is supplied through the gas supply line 24 ₄ As a single cleaning gas, the cleaning gas is delivered into the tubular cleaning chamber 14 at a flow rate of 10 standard liters/minute, and simultaneously, the plasma supply power system 33 discharges the cleaning gas into the tubular cleaning chamber 14 at a radio frequency power of 36 kw, so that the single cleaning gas is ionized and converted into plasma and the contamination layer of the carrier 16 is removed through a plasma reaction. The time period for introducing the single cleaning gas is 36 minutes to complete the plasma reaction.

After the plasma reaction is finished, the discharge in the tubular cleaning cavity 14 is cut off by the plasma power supply system 33, and then the pressure of the tubular cleaning cavity 14 is released by the vacuum control device 18.

In examples 3 to 5, the composition and average thickness of the contamination layer formed on the surface of the carrier 16 after the deposition process, the cleaning temperature for performing the plasma chemical vapor cleaning process, the pressure in the tubular cleaning chamber 14, the cleaning time, the rf power, and the cleaning gas and the corresponding flow rate used are shown in table 1.

TABLE 1

In some embodiments of the present invention, referring to fig. 4, the gas supply line 24 is also used as a deposition gas supply line to provide at least one reactive gas into the tubular cleaning chamber 14 for the deposition process, so that the tubular cleaning chamber 14 can be used as a tubular deposition chamber.

Specifically, the processing method further includes performing the deposition process by the plasma generation device and the cleaning control device after the carrier loaded with the substrate is conveyed to the tubular cleaning chamber 14 by the conveying device 15.

Further, the tubular cleaning cavity 14 is further provided with the turnover driving device to drive the carrier to perform the turnover motion.

In some embodiments of the present invention, the tubular cleaning chamber 14 and the tubular deposition chamber 13 have the same structure.

In some embodiments of the present invention, when the tubular cleaning chamber 14 is used as a tubular deposition chamber, a contamination layer may also be formed on the inner wall of the tubular cleaning chamber 14, and the carrier and the tubular cleaning chamber for performing the deposition treatment may be simultaneously subjected to the vapor phase cleaning treatment by controlling the temperature in the tubular cleaning chamber 14 to be 300-600 ℃, the pressure in the tubular cleaning chamber 14 to be 0.1-0.6 kpa, and the flow rate of the cleaning gas to be 2-50 standard liters/minute.

Specifically, in embodiments 6 to 10 of the present invention, the tubular cleaning chamber 14 is simultaneously used as a tubular deposition chamber, so that after the carrier 16 is loaded with a plurality of substrates of different batches to complete deposition processing, the tubular cleaning chamber 14 and the carrier 16 are simultaneously subjected to vapor phase cleaning processing.

More specifically, example 6 of the present invention is different from example 1 in that: example 6 formed a contaminated layer having an average thickness of 4.5 microns and the purge gas was passed for a period of 202.5 minutes.

The plasma chemical vapor cleaning treatment of example 7 is different from example 2 in that: the average thickness of the formed contaminated layer was 4.5 μm, and the period of time for which the cleaning gas was introduced was 55 minutes.

The plasma chemical vapor cleaning treatment of example 8 differs from example 3 in that: the average thickness of the formed contaminated layer was 4.5 μm, and the period of time for which the cleaning gas was introduced was 120 minutes.

The plasma chemical vapor cleaning treatment of example 9 differs from example 4 in that: the average thickness of the formed contaminated layer was 4.8 μm, and the period of time for which the cleaning gas was introduced was 90 minutes.

The plasma chemical vapor cleaning treatment of example 10 differs from example 5 in that: the average thickness of the formed contamination layer was 6.4 μm, and the period of time for introducing the cleaning gas was 90 minutes.

In embodiments 1 to 10 of the present invention, the carrier to be cleaned is a graphite boat to be cleaned, most of the surface of the graphite boat cannot see the color of the graphite body because of the contamination layer covering the surface, and after cleaning, the surface of the carrier to be cleaned shows the color of the graphite body, which indicates that the carrier has been effectively cleaned and the performance of the dielectric film formed by subsequent deposition treatment is not affected.

The inner walls of the tubular cleaning chambers of embodiments 1-10 of the present invention are made of quartz before the deposition treatment, and are in a translucent or transparent state. After a plurality of deposition treatments, the inner wall is mostly covered with a pollution layer, and the inner wall is in an opaque state. After the cleaning treatment, the inner wall of the tubular cleaning cavity is in the original semitransparent or transparent state again, which indicates that the tubular cleaning cavity is effectively cleaned and the performance of a dielectric film formed by the subsequent deposition treatment is not influenced.

In some embodiments of the present invention, a turnover driving device is disposed at least one of the first chamber door and the second chamber door of the tubular deposition chamber 13 to drive the carrier 16 to perform the turnover motion.

In some embodiments of the present invention, the turning time is not more than 10 minutes, and the turning angle of the carrier is controlled to be 90-270 degrees by the turning motion.

FIG. 5 is a schematic view of the tubular deposition chamber and carrier shown in FIG. 2 in operation.

Referring to fig. 4 and 5, the tubular deposition chamber 13 is enclosed by a first and a second opposing

chamber door

41, 42 and a second cylindrical sidewall 43 between the first and

second chamber doors

41, 42, and the tubular deposition chamber 13 is different from the tubular cleaning chamber 14 shown in fig. 3 in that: second chamber door 42 orientation the first upset supporting part 45 of fixedly connected with can be dismantled to the terminal surface of carrier 16, first upset supporting part 45 fixed connection upset portion 44, fixed connection can be dismantled to upset portion 44 carrier 16, the outer terminal surface of second chamber door 42 is provided with upset driving motor 47, in order to run through last second chamber door 42 and fixed connection first upset supporting part 45, in order to drive upset portion 44 upset, and then drive carrier 16 overturns in step. The inverting portion 44, the first inverting support portion 45, and the inverted drive motor 47 together constitute an inverting drive device for driving the carrier 16 to invert.

Further, a second turning support portion 46 is further disposed between the first chamber door 41 and the carrier 16, and the second turning support portion 46 turns over synchronously with the carrier 16 and is located at the same horizontal plane as the first turning support portion 45, so as to further support the carrier 16 to be suspended in the tubular deposition chamber 13.

In some embodiments of the present invention, the first tilting support portion 45 and the second tilting support portion 46 are disposed along a central axis of the vehicle 16 in the horizontal direction, so that the vehicle 16 can rotate around the central axis in the horizontal direction.

In some embodiments of the present invention, the first and second turning supports 45 and 46 are disposed along a central axis of the tube type deposition chamber 13 in a horizontal direction, so that the carrier 1 can rotate around the central axis of the tube type deposition chamber 13 in the horizontal direction.

Referring to fig. 5, a magnetic fluid sealing device 48 is further disposed between the second chamber door 42 and the turnover driving motor 47 to further enhance the sealing performance of the second chamber door 42.

In some embodiments of the present invention, the turnover driving device further includes a position control portion disposed outside the tubular deposition chamber 13 and connected to the turnover supporting portion, and the turnover supporting portion controls any one of the two surfaces to be plated of the substrate to be in a state to be plated according to an instruction of the position control portion.

Fig. 6 is a schematic view of the operation of a plurality of substrates in the carrier shown in fig. 2 according to some embodiments of the present invention. Fig. 7 is a schematic view showing an operation state of the base plate shown in fig. 6 in the substrate carrier part.

Referring to fig. 2 and 6, the carrier 16 includes a plurality of graphite boat pieces 52 parallel to each other. The region formed between adjacent graphite boat pieces is a substrate receiving portion 53 for receiving a substrate 54. The carrier 16 further includes insulating barrier rods 51 disposed in parallel, wherein the insulating barrier rods 51 penetrate through the graphite boat 52 and are perpendicular to the graphite boat 52 to block the substrate 54 in the substrate carrier 53.

Referring to fig. 6 and 7, the substrate carrier 53 is surrounded by a first cavity surface 63, a second cavity surface 64 and a third surface (not labeled) formed between the first cavity surface 63 and the second cavity surface 64, and the first cavity surface 63 and the second cavity surface 64 are solid cavity surfaces. The substrate 54 includes a first surface 61 and a second surface 62 parallel to each other. The first cavity surface 63 has a first substrate carrying area, the second cavity surface 64 has a second substrate carrying area, and the first and second substrate carrying areas are solid areas.

In some embodiments of the present invention, referring to fig. 5, 6 and 7, the flipping driving motor 47, under the command of the position control part (not shown), makes the carrier 16 be at a first position where the first cavity surface 63 bears the substrate 54 or controls the carrier 16 be at a second position where the second cavity surface 64 bears the substrate 54 through the first flipping supporting part 45.

When the carrier 16 is rotated to a first position, the first cavity surface 63 is directly below the second cavity surface 64, the first cavity surface 63 bearing the first surface 61 of the substrate 54;

when the carrier 16 is rotated to a second position, the first cavity surface 63 is directly above the second cavity surface 64, and the second cavity surface 64 carries the second surface 62 of the substrate 54.

The supply of power to the plasma generation within the tubular deposition chamber 13 is interrupted when the carrier 16 is rotated between the first position and the second position.

When the carrier 16 needs to be rotated, the plasma generation power supply inside the tubular deposition chamber 13 is first interrupted, i.e. the first electrode 31 and the second electrode 32 are electrically disconnected from the first electrode interface (not shown) and the second electrode interface (not shown) of the carrier 16, and then the carrier 16 is driven to turn over.

When the carrier 16 is rotated, the first electrode 31 and the second electrode 32 are electrically connected to the first electrode interface (not shown) and the second electrode interface (not shown) of the carrier 16, so as to recover the power supply for plasma generation in the tubular deposition chamber 13, thereby facilitating the deposition process on the substrate in the carrier 16. In the present invention, the tubular deposition chamber 13 remains stationary during the driving of the carrier 16.

In some embodiments of the present invention, the monitoring device is used to monitor the number of times the carrier is operated or the deposition of the contaminants on the surface of the carrier, so as to determine whether the carrier is transported into the tubular cleaning chamber by the transporting device for performing the vapor phase cleaning process.

Specifically, the monitoring device is an electrical control device, and the specific implementation manner of the electrical control device is a conventional technical means of those skilled in the art, which is not described herein again.

In some embodiments of the present invention, the monitoring device monitors the contamination level of the contamination layer of the carrier 16 to determine when the vapor phase cleaning process is required.

Specifically, the monitoring device comprises a host and a spectrum ellipsometer, wherein the host is used for recording the running times of the carrier, and the spectrum ellipsometer is used for testing the thickness of the pollution layer. The specific mounting and operation of the mainframe and the spectroscopic ellipsometer are conventional in the art.

In some embodiments of the present invention, the monitoring device includes the host, and an operator determines the thickness of the contamination layer by combining with visual observation according to the carrier operation times recorded by the host.

Although the embodiments of the present invention have been described in detail hereinabove, it is apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it is to be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention as described herein is capable of other embodiments and of being practiced or of being carried out in various ways.

Claims

1. A production process applied to tubular PECVD deposition equipment, wherein the tubular PECVD deposition equipment comprises a transmission device and a tubular deposition cavity provided with a deposition control device, and the production process comprises the following steps:

the device is characterized in that the tubular deposition cavity is also provided with a turnover driving device, and the tubular PECVD equipment also comprises a tubular cleaning cavity provided with a cleaning control device;

in the step S1, the carrier is driven by the turnover driving device to carry out turnover movement so that two surfaces to be plated, which are opposite to the substrate, are in a state to be plated respectively, and then a dielectric film is formed on the surface to be plated, which is in the state to be plated, through the deposition treatment, wherein the dielectric film is composed of at least one of an antireflection film and a passivation film;

the production process further comprises S3, wherein S3 comprises: after the carrier to be cleaned is conveyed to the tubular cleaning cavity through the conveying device, carrying out gas phase cleaning treatment on the carrier to be cleaned through the cleaning control device;

the tubular cleaning cavity is formed by enclosing a first end door, a second end door and a first cylindrical side wall, wherein the first end door and the second end door are opposite, and the first cylindrical side wall is positioned between the first end door and the second end door;

the cleaning control device of the tubular cleaning cavity comprises a temperature control device; the temperature control device is arranged on the first cylindrical side wall;

the cleaning control device also comprises a gas supply pipeline which is also used as a deposition gas supply pipeline to provide at least one reaction gas to the tubular cleaning cavity for the deposition treatment, so that the tubular cleaning cavity can be used as a tubular deposition cavity; the tubular cleaning cavity is simultaneously used as a tubular deposition cavity, so that the carrier is loaded with a plurality of substrates of different batches to complete deposition treatment, and then the tubular cleaning cavity and the carrier are simultaneously subjected to gas phase cleaning treatment;

the tubular cleaning cavity is also provided with a plasma generating device; the cleaning control device also comprises a first electrode, a second electrode and a plasma supply power system so as to form a plasma generating device; the first electrode and the second electrode are arranged on the second end gate;

the tubular deposition cavity consists of a first cavity door and a second cavity door which are opposite, and an overturning driving motor is arranged on the outer end face of the second cavity door;

the turnover driving motor enables the carrier to be located at a first position where the first cavity surface bears the substrate or controls the carrier to be located at a second position where the second cavity surface bears the substrate under the instruction control of the position control part through the first turnover supporting part;

when the carrier rotates to a first position, the first cavity surface is positioned right below the second cavity surface, and the first cavity surface bears the first surface of the substrate;

when the carrier rotates to a second position, the first cavity surface is positioned right above the second cavity surface, and the second cavity surface bears the second surface of the substrate;

interrupting the supply of plasma generation power to the tubular deposition chamber when the carrier is rotated between the first position and the second position;

when the carrier needs to be rotated, firstly, the power supply of the plasma generation in the tubular deposition cavity is interrupted, namely, the electric contact between the first electrode and the second electrode and the first electrode interface and the second electrode interface of the carrier is disconnected, and then the carrier is driven to overturn;

and when the carrier rotates, the first electrode and the second electrode are electrically contacted with the first electrode interface and the second electrode interface of the carrier so as to recover the power supply of the plasma generation in the tubular deposition cavity and facilitate the deposition treatment of the substrate in the carrier.

2. The production process according to claim 1, wherein the gas-phase cleaning treatment includes any one of a chemical gas-phase cleaning treatment and a plasma chemical gas-phase cleaning treatment.

3. The production process according to claim 2, wherein the temperature in the tubular cleaning chamber in which the chemical vapor cleaning treatment is performed is controlled by the cleaning control device to be 200 to 600 degrees celsius, the pressure is 0.1 to 67 kpa, and the flow rate of the cleaning gas used is 2 to 50 normal liters per minute.

4. The production process according to claim 2, wherein the temperature in the tubular cleaning chamber is controlled to be 300-600 ℃ by the cleaning control device, the pressure is controlled to be 0.1-0.6 kilopascal, the flow rate of the used cleaning gas is 2-50 standard liters/minute, and the radio frequency power is controlled to be 10-40 kilowatts by the plasma generation device to perform the plasma chemical vapor cleaning treatment.

5. The method of claim 2The production process is characterized in that the cleaning gas used for carrying out the chemical vapor phase cleaning is HF and F ₂ 、Cl ₂ And ClF ₃ Wherein a cleaning gas used for the plasma chemical vapor cleaning is NF ₃ 、SF ₆ 、CF ₄ 、CHF ₃ And C ₂ F ₆ At least one of (1).

6. The production process according to claim 5, wherein at least one of a cleaning gas used for performing the chemical vapor cleaning and a cleaning gas used for performing the plasma chemical vapor cleaning further contains at least one of nitrogen, argon, and oxygen.

7. The production process according to claim 4, wherein any one of the chemical vapor cleaning process and the deposition process is performed through the tubular cleaning chamber.

8. The production process according to claim 7, wherein the tubular cleaning chamber is further provided with the turnover driving device, and the carrier is driven by the turnover driving device to perform the turnover motion.

9. The production process according to claim 1, wherein the ratio of the number of tubular cleaning chambers to the number of tubular deposition chambers is 1:1-1:11.

10. the production process according to claim 1, wherein the substrate is any one of an N-type silicon wafer or a P-type silicon wafer, and the substrate is formed by subjecting an original silicon wafer to any one or more of a texturing process, a diffusion process, an insulation polishing process, a thermal oxidation process, and a back passivation process.

11. The process of claim 1 wherein said dielectric film has a thickness of less than 200 nm.

12. The production process according to claim 1, wherein one surface to be plated of the substrate to be plated forms an antireflection film, and the other surface to be plated forms a passivation film and the antireflection film, the antireflection film being composed of at least one antireflection layer, and the passivation film being composed of at least one passivation layer.

13. The production process according to claim 12, wherein the antireflection layer is composed of any one of silicon nitride, silicon oxide, silicon oxynitride, and silicon carbide, and the passivation layer is composed of aluminum oxide.

14. The production process according to claim 12, wherein the antireflection film or the passivation film is a progressive film.