CN112786531A - Method for preparing deep hole interconnection structure based on nano metal - Google Patents
Method for preparing deep hole interconnection structure based on nano metal Download PDFInfo
- Publication number
- CN112786531A CN112786531A CN202011641344.2A CN202011641344A CN112786531A CN 112786531 A CN112786531 A CN 112786531A CN 202011641344 A CN202011641344 A CN 202011641344A CN 112786531 A CN112786531 A CN 112786531A
- Authority
- CN
- China
- Prior art keywords
- hole
- nano metal
- glass plate
- metal paste
- deep
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
- H01L21/76864—Thermal treatment
Abstract
The invention discloses a method for preparing a deep hole interconnection structure based on nano metal, which comprises the steps of firstly forming a deep hole on a glass plate to be formed with the deep hole interconnection structure; filling the deep hole with the nano metal paste through a glue dispensing device; after filling, scraping residual nano metal particles overflowing from the surface of the glass plate; then the filled nano metal is subjected to variable-depth sintering molding; and finally, cleaning the glass plate by a wet method to remove residual nano metal particles, and finishing the preparation of the deep hole interconnection structure on the glass plate. According to the invention, the deep holes are filled with nano metal and then sintered to form the conductor structure with the interconnected deep holes, and an electro-coppering mode is not required, so that the pollution to the environment is avoided.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for preparing a deep hole interconnection structure based on nano metal.
Background
The size of integrated circuits has been reduced to the nanometer level, and gradually approaches the physical limit of the size, and the method of reducing the feature size has not been able to further improve the performance and functionality of the integrated circuits, so the development of the integrated circuits faces a series of problems and challenges.
At present, the above problems are solved by a three-dimensional integration technology, which improves the integration level of a circuit without further reducing the feature size of a device, compared with a conventional planar circuit, by stacking and integrating chips in a vertical direction. The three-dimensional integration technology can integrate chips of various materials, processes and functions into a whole, and obviously improves the electronic performance of a circuit, wherein the laminated packaging mode based on TSV vertical interconnection gradually leads the development trend of the packaging technology by the key technical advantages of short-distance interconnection and high-density integration.
The TSV vertical interconnection packaging technology mainly comprises the steps of forming a TSV hole in the back surface of a wafer to expose a bonding pad, leading out the bonding pad by using a metal layer to form a lead, and then wiring and ball planting on the back surface of the wafer. For example, chinese patent publication No. CN105405781A, publication No. 2016.3.16: the method for manufacturing the wafer-level packaging back lead by adopting the CMP process is characterized in that TSV holes are formed in the back surface of a wafer, and a copper plating process is performed to form a conductor structure, so that the environment is greatly polluted. Therefore, it is an urgent problem to provide a new interconnection method as a conductor structure.
Disclosure of Invention
The invention provides a method for preparing a deep hole interconnection structure based on nano metal.
The technical scheme of the invention is as follows:
a preparation method of a deep hole interconnection structure based on nano metal comprises the following steps:
s1, forming a deep hole on the glass plate to be formed with the deep hole interconnection structure by laser processing or physical cutting or chemical corrosion;
s2, extruding the nano metal paste into the deep hole by the glue dispensing device, judging whether the deep hole is completely filled with the nano metal paste by using an automatic optical detection system, continuously extruding the nano metal paste into the deep hole when the deep hole is not completely filled, and removing the glue dispensing device after the deep hole is completely filled;
s3, scraping residual nano metal particles overflowing from the surface of the glass plate by using a scraper;
s4, carrying out variable-depth sintering molding on the nano metal in the deep hole by using laser;
and S5, carrying out wet cleaning on the glass plate with the sintered deep hole, removing residual nano metal particles, and completing the preparation of the deep hole interconnection structure on the glass plate.
Further, the deep hole comprises a through hole or a blind hole:
when a through hole:
in step S2, moving the dispensing device to a position opposite to the through hole on the glass plate, pressing down the dispensing device, and extruding the nano metal paste into the through hole after the dispensing head of the dispensing device extends into the through hole to seal the through hole, so that the nano metal paste is filled in the through hole;
in step S4, the nano metal paste is sintered from the middle of the through hole to both sides;
when the blind holes are formed:
in step S2, moving the dispensing device to face the blind hole on the glass plate, pressing the dispensing device downward until the sealing ring of the dispensing device completely seals the blind hole, then evacuating the blind hole by using a vacuum-pumping device through the dispensing device to remove air in the blind hole, and then extruding the nano-metal paste into the blind hole to fill the nano-metal paste in the blind hole;
in step S4, the nano metal paste is sintered in order from the bottom of the blind via to the upper side.
Further, adhesive deposite device includes that the shell glues the head with the point, the point is glued the head and is installed through the ring the inside of shell, the point glue the head with interference fit between the ring, the last intercommunication metal runner that connects of point glue head, metal runner's inflow end is worn out the shell links to each other with the point gum machine, the bottom border of shell is equipped with the sealing washer.
Furthermore, an air hole is formed in the shell of the dispensing device and connected with the vacuumizing device, and a plurality of air holes are formed in the circular ring to enable the cavity where the dispensing head is located to be communicated with the air hole.
Further, when the through hole is formed, in step S4, the variable depth sintering molding uses one of the following ways:
a) horizontally placing a glass plate, irradiating downwards by using laser beams, converging the laser in the through hole by matching with a convex lens, converging laser points in the middle of the through hole by adjusting the depth of the convex lens or the height of the glass plate, and sintering and molding the nano metal paste in the through hole from the middle to two sides in sequence;
b) horizontally placing a glass plate, irradiating the through hole from the side direction by using laser, converging a laser point at the middle of the through hole by adjusting the height of the glass plate and a laser galvanometer, and sintering and molding the nano metal paste in the through hole from the middle to two sides in sequence;
c) the glass plate is obliquely placed, the through hole is irradiated from top to bottom by laser, the laser points are converged at the middle of the through hole by adjusting the horizontal position of the glass plate and a laser galvanometer, and the nano metal in the through hole is sintered and molded from the middle to two sides in sequence;
d) the method comprises the steps of horizontally placing a glass plate, downwards irradiating a reflector by using laser, refracting the laser into a through hole by the reflector, converging a laser spot at the middle of the through hole by adjusting the height of the glass plate, the angles and the positions of a laser vibrating mirror and the reflector, and sintering and molding the nano metal paste in the through hole from the middle to two sides in sequence.
Further, after the deep hole is completely filled with the nano metal paste, the glass plate is integrally heated, so that the nano metal paste is sintered to form an interconnection line, wherein the sintering parameters are as follows: the sintering temperature is 200-350 ℃, and the sintering time is 0.1-200 minutes.
Further, after the nano metal paste is completely filled in the deep hole, compacting treatment is carried out by using one of the following modes:
1) applying high pressure and pulse pressure to the nano metal paste in the deep hole to compact the filled nano metal paste;
2) applying ultrasonic wave to the glass plate to compact the nano metal paste in the deep hole;
3) when the deep hole is a blind hole, a flexible gasket is placed on one side of the opening of the blind hole, and instantaneous impulse impact is applied to the side, not opened, of the blind hole, so that the filled nano metal paste is compacted.
Further, the compacting treatment is carried out after the nano metal paste is filled or when the deep hole is sintered, and the cyclic operation of sintering-filling-compacting-sintering is formed.
Further, the deep hole includes a cylindrical or tapered hole, and the inner wall of the hole is smooth or has a corrugated shape.
Further, the wet cleaning comprises the following specific processes: and soaking the surface to be cleaned by using fluid with oxidizability to oxidize the residual nano metal particles, and then carrying out acid cleaning on the surface to remove the residual nano metal particles.
The invention has the beneficial effects that:
according to the invention, the nano metal paste is filled in the deep hole through the dispensing device, after the filling is finished, the nano metal in the deep hole is subjected to variable-depth sintering forming by using laser, and after the sintering is finished, the nano metal is subjected to wet cleaning, so that the deep hole interconnection structure is prepared.
Drawings
FIG. 1 is a flow chart of a process for fabricating a via interconnect structure;
FIG. 2 is a flow chart of a process for fabricating a blind via interconnect structure;
FIG. 3 is a schematic structural view of a dispensing device;
FIG. 4 is a schematic view of a) a method of variable depth sintering molding;
FIG. 5 is a schematic view of the method b) of the variable depth sintering molding;
FIG. 6 is a schematic view of the c) method of variable depth sintering molding;
FIG. 7 is a schematic view of the method of d) for variable depth sintering molding;
in the figure: the device comprises a glass plate 1, a dispensing device 2, a dispensing head 201, a sealing ring 202, a shell 203, a circular ring 204, a metal runner 205, an air hole 206, an air vent 207, a scraper 3, a laser 4, a convex lens 5 and a reflector 6.
Detailed Description
The drawings are for illustrative purposes only and are not to be construed as limiting the patent; for the purpose of better illustrating the embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted. The positional relationships depicted in the drawings are for illustrative purposes only and are not to be construed as limiting the present patent.
Example 1:
as shown in fig. 1, a method for preparing a deep hole interconnection structure based on nano metal, for an interconnection structure in which a deep hole is a through hole, comprises the following steps:
s1, forming a through hole on the glass plate 1 to be formed with the deep hole interconnection structure by laser processing or physical cutting or chemical corrosion;
s2, moving the dispensing device 2 to be opposite to the through hole on the glass plate 1, pressing down the dispensing device 2, extending the dispensing head 201 of the dispensing device 2 into the through hole to seal the through hole, extruding the nano metal paste into the through hole, judging whether the nano metal paste completely fills the through hole by using an automatic optical detection system, continuously extruding the nano metal paste into the through hole when the through hole is not completely filled, and removing the dispensing device 2 when the through hole is completely filled;
s3, scraping residual nano metal particles overflowing from the surface of the glass plate 1 by using a scraper 3;
s4, carrying out variable-depth sintering molding on the nano metal in the through hole by using laser 4, and sintering the nano metal from the middle part of the deep hole to two sides in sequence until sintering is finished;
and S5, carrying out wet cleaning on the glass plate 1 with the sintered through holes to remove residual nano metal particles, and completing the preparation of the deep hole interconnection structure on the glass plate 1.
As shown in fig. 2, a method for preparing a deep hole interconnection structure based on nano metal, for an interconnection structure in which a deep hole is a blind hole, comprises the following steps:
s1, forming a blind hole on the glass plate 1 to be formed with the deep hole interconnection structure by laser processing or physical cutting or chemical corrosion;
s2, moving the dispensing device 2 to be opposite to the blind hole in the glass plate 1, pressing down the dispensing device 2 until the sealing ring 202 of the dispensing device 2 completely seals the blind hole, vacuumizing the blind hole by using a vacuumizing device through the dispensing device 2 to remove air in the blind hole, extruding nano metal paste into the blind hole, judging whether the nano metal paste completely fills the blind hole by using an automatic optical detection system, continuously extruding the nano metal paste into the blind hole when the blind hole is not completely filled, and moving away the dispensing device 2 after the blind hole is completely filled;
s3, scraping residual nano metal particles overflowing from the surface of the glass plate by using a scraper 3;
s4, carrying out variable-depth sintering molding on the nano metal in the blind hole by using laser 4, and sintering the nano metal paste from the bottom of the blind hole to the upper side until sintering is finished;
and S5, carrying out wet cleaning on the glass plate 1 with the sintered blind holes to remove residual nano metal particles, and completing the preparation of the deep hole interconnection structure on the glass plate 1.
Referring to fig. 3, in the embodiment, the dispensing device 2 includes a casing 203 made of aluminum alloy and a dispensing head 201, the dispensing head 201 is installed inside the casing 203 through a circular ring 204, and the dispensing head 201 and the circular ring 204 are in interference fit and can move up and down relative to the casing 203; a metal flow channel 205 is communicated with the dispensing head 201, the inflow end of the metal flow channel 205 penetrates out of the shell 203 to be connected with a dispensing machine, and the dispensing machine enables the nano metal paste to flow into the dispensing head 201 through the metal flow channel 205; the bottom edge of the shell 203 is provided with a sealing ring 202, the sealing ring 202 is made of rubber, the sealing ring 202 is used for sealing the deep hole and isolating the deep hole from the outside, the deep hole to be filled is completely wrapped during use, and the air tightness is ensured during filling of the nano metal paste; the shell 203 is further provided with an air hole 206 connected with a vacuum-pumping device, and the ring 204 is provided with a plurality of air holes 207 so that the cavity where the dispensing head 201 is located is communicated with the air hole 206, thereby facilitating the vacuum-pumping device to vacuum the deep hole.
Referring to fig. 4 to 7, in the present embodiment, when the through hole is formed, in step S4, the variable-depth sintering process uses one of the following methods:
a) horizontally placing the glass plate 1, irradiating downwards by using laser beams, converging the laser in the through hole by matching with the convex lens 5, converging laser spots in the middle of the through hole by adjusting the depth of the convex lens 5 or the height of the glass plate 1, and sintering and molding the nano metal paste in the through hole from the middle to two sides in sequence;
b) horizontally placing the glass plate 1, irradiating the through hole from the side direction by using laser 4, converging a laser point at the middle of the through hole by adjusting the height of the glass plate 1 and a laser galvanometer, and sintering and molding the nano metal paste in the through hole from the middle to two sides in sequence;
c) the glass plate 1 is obliquely placed, the through hole is irradiated from the upper part to the lower part by using laser 4, the laser points are gathered in the middle of the through hole by adjusting the horizontal position of the glass plate 1 and a laser galvanometer, and the nano metal in the through hole is sintered and molded from the middle to the two sides in sequence;
d) the method comprises the steps of horizontally placing a glass plate 1, downwards irradiating a reflector 6 by using laser 4, refracting the laser 4 into a through hole by the reflector 6, converging a laser spot at the middle of the through hole by adjusting the height of the glass plate 1 and the angles and positions of a laser vibrating mirror and the reflector 6, and sintering and molding the nano metal paste in the through hole from the middle to two sides in sequence.
In this embodiment, after the nano metal paste is completely filled in the deep hole, the glass plate 1 may also be heated integrally to sinter the nano metal paste to form the interconnection line, where the sintering parameters are as follows: the sintering temperature is 200-350 ℃, the sintering time is 0.1-200 minutes, and the flexible adjustment can be carried out according to the nano metal material, the size of the deep hole and the thermal property of the glass plate.
In this embodiment, after the nano metal paste is completely filled in the deep hole, a compacting process may be performed, so that the nano metal paste is more compact in the deep hole, has higher density, and can enhance the conductivity, wherein the compacting process includes one of the following manners:
1) applying high pressure and pulse pressure to the nano metal paste in the deep hole to compact the filled nano metal paste;
2) applying ultrasonic waves to the glass plate 1 to compact the nano metal paste in the deep hole;
3) when the deep hole is a blind hole, a flexible gasket is placed on one side of the opening of the blind hole, and instantaneous impulse impact is applied to the side, not opened, of the blind hole, so that the filled nano metal paste is compacted.
The compacting treatment can be performed after filling the nano metal paste, or can be performed during sintering the deep hole, so as to form a cycle operation of sintering, filling, compacting and sintering.
In this embodiment, the deep hole comprises a cylindrical, conical or irregular shaped hole, and the inner wall of the hole can be smooth or have a corrugated shape.
In this embodiment, the wet cleaning process includes: and soaking the surface to be cleaned by using fluid with oxidizability to oxidize the residual nano metal particles, and then carrying out acid cleaning on the surface to remove the residual nano metal particles.
Example 2:
referring to fig. 1, a method for manufacturing a deep hole interconnection structure is provided by way of example, and for an interconnection structure in which a deep hole is a through hole, the method includes the following steps:
s1, adopting CO with wavelength of 10.6 μm, pulse width of 500ps, frequency of 5Hz and power of 5mJ2Processing a through hole with the diameter of 1.2 mu m on the glass plate 1 by laser, wherein the through hole is vertical to the surface of the glass plate 1 and penetrates through the upper surface and the lower surface, the cross section of the through hole is circular, and the depth of the through hole is 70 mu m;
s2, moving the dispensing device 2 to be opposite to the through hole in the glass plate 1, pressing down the dispensing device 2, enabling a dispensing head 201 of the dispensing device 2 to extend into the through hole until one end of the through hole is sealed, extruding nano copper paste in the dispensing head 201 to enable the nano copper paste to be filled in the through hole, enabling the nano copper paste to be spherical in shape and 50nm in particle size, enabling the nano copper paste to flow and be filled in the through hole, judging whether the nano copper paste completely fills the through hole or not by using an automatic optical inspection system (AOI), and moving away the dispensing device 2 after the through hole is completely filled;
s3, scraping the nanometer copper paste overflowing from the upper surface and the lower surface of the glass plate 1 by using two scraping plates 3, and attaching the scraping plates 3 to the surface of the glass plate 1;
s4, carrying out variable-depth sintering molding on the nano copper paste in the through hole by using ultraviolet nanosecond pulse laser 4 with the power of 1 w: horizontally placing a glass plate 1, irradiating a through hole from the side direction by using laser 4, collecting a laser point at the middle of the through hole by adjusting the height of the glass plate 1 and a laser galvanometer, sintering the nano copper paste in the through hole from the middle to two sides in sequence until the sintering is finished, so that the nano copper paste is formed more tightly without holes, the sintering temperature of the laser sintering nano copper paste is 250 ℃, and the sintering time is 20 minutes;
s5, soaking the sintered glass plate 1 in 30% hydrogen peroxide oxidant to oxidize the residual nano copper on the surface of the glass plate 1, taking out after the oxidation is completed, cleaning the surface of the glass plate 1 by using 10% dilute sulfuric acid until the residual nano copper on the surface is completely removed, and completing the preparation of the deep hole interconnection structure on the glass plate 1.
Referring to fig. 2, a method for manufacturing a deep hole interconnection structure is provided by way of example, and for an interconnection structure in which a deep hole is a blind hole, the method includes the following steps:
s1, adopting CO with wavelength of 10.6 μm, pulse width of 500ps, frequency of 5Hz and power of 5mJ2Processing a blind hole with the diameter of 1.2 mu m on the glass plate 1 by laser, wherein the blind hole is vertical to the surface of the glass plate 1, penetrates through the upper surface but does not penetrate through the lower surface, the cross section of the blind hole is circular, and the distance from the lowest point of the blind hole to the upper surface is 50 mu m;
s2, moving the dispensing device 2 to be opposite to the blind hole in the glass plate 1, pressing down the dispensing device 2 until the sealing ring 202 of the dispensing device 2 completely seals the blind hole, starting the vacuumizing device, vacuumizing the vacuumizing device through the air hole 206 of the dispensing device 2 to evacuate air in the closed space, then pressing down the dispensing head 201, extruding the nano copper paste in the dispensing head 201 to fill the nano copper paste in the blind hole, wherein the nano copper paste is spherical in shape and has a particle size of 50nm, filling the nano copper paste in the blind hole in a flowing manner, judging whether the nano copper paste completely fills the blind hole by using an automatic optical inspection system (AOI), lifting the dispensing head after the blind hole is completely filled, filling air into the closed space, and removing the dispensing device;
s3, scraping the nanometer copper paste overflowing from the upper surface of the glass plate 1 by using a scraper 3, and attaching the scraper 3 to the surface of the glass plate 1;
s4, carrying out variable-depth sintering molding on the nano copper paste in the blind hole by using ultraviolet nanosecond pulse laser 4 with the power of 1 w: horizontally placing a glass plate 1, irradiating the bottom position of a blind hole from the side direction by using laser 4, adjusting the relative position of a laser point and the hole by adjusting the height of the glass plate 1 and a laser galvanometer to sinter and form the nano copper paste, sintering the nano copper paste from the bottom of the blind hole to the upper side in sequence until sintering is completed, so that the nano copper paste is formed more tightly without the hole, the sintering temperature of the laser sintering nano copper paste is 250 ℃, and the sintering time is 20 minutes;
s5, soaking the sintered glass plate 1 in 30% hydrogen peroxide oxidant to oxidize the residual nano copper on the surface of the glass plate 1, taking out after the oxidation is completed, cleaning the surface of the glass plate 1 by using 10% dilute sulfuric acid until the residual nano copper on the surface is completely removed, and completing the preparation of the deep hole interconnection structure on the glass plate 1.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. A preparation method of a deep hole interconnection structure based on nano metal is characterized by comprising the following steps:
s1, forming a deep hole on the glass plate to be formed with the deep hole interconnection structure by laser processing or physical cutting or chemical corrosion;
s2, extruding the nano metal paste into the deep hole by the glue dispensing device, judging whether the deep hole is completely filled with the nano metal paste by using an automatic optical detection system, continuously extruding the nano metal paste into the deep hole when the deep hole is not completely filled, and removing the glue dispensing device after the deep hole is completely filled;
s3, scraping residual nano metal particles overflowing from the surface of the glass plate by using a scraper;
s4, carrying out variable-depth sintering molding on the nano metal paste in the deep hole by using laser;
and S5, carrying out wet cleaning on the glass plate with the sintered deep hole, removing residual nano metal particles, and completing the preparation of the deep hole interconnection structure on the glass plate.
2. The method for preparing a deep-hole interconnection structure according to claim 1, wherein the deep hole comprises a through hole or a blind hole:
when a through hole:
in step S2, moving the dispensing device to a position opposite to the through hole on the glass plate, pressing down the dispensing device, and extruding the nano metal paste into the through hole after the dispensing head of the dispensing device extends into the through hole to seal the through hole, so that the nano metal paste is filled in the through hole;
in step S4, the nano metal paste is sintered from the middle of the through hole to both sides;
when the blind holes are formed:
in step S2, moving the dispensing device to face the blind hole on the glass plate, pressing the dispensing device downward until the sealing ring of the dispensing device completely seals the blind hole, then evacuating the blind hole by using a vacuum-pumping device through the dispensing device to remove air in the blind hole, and then extruding the nano-metal paste into the blind hole to fill the nano-metal paste in the blind hole;
in step S4, the nano metal paste is sintered in order from the bottom of the blind via to the upper side.
3. The method for preparing a deep hole interconnection structure according to claim 2, wherein the dispensing device comprises a housing and a dispensing head, the dispensing head is mounted inside the housing through a ring, the dispensing head and the ring are in interference fit, the dispensing head is communicated with a metal runner, an inflow end of the metal runner penetrates out of the housing and is connected with the dispensing machine, and a sealing ring is mounted at the bottom edge of the housing.
4. The method for preparing a deep hole interconnection structure according to claim 3, wherein the casing of the dispensing device is provided with an air hole connected with a vacuum pumping device, and the ring is provided with a plurality of air holes so that the cavity where the dispensing head is located is communicated with the air hole.
5. The method for preparing a deep hole interconnection structure according to claim 2, wherein in the case of a via hole, in step S4, the variable depth sintering molding is performed by using one of the following methods:
a) horizontally placing a glass plate, irradiating downwards by using laser beams, converging the laser in the through hole by matching with a convex lens, converging laser points in the middle of the through hole by adjusting the depth of the convex lens or the height of the glass plate, and sintering and molding the nano metal paste in the through hole from the middle to two sides in sequence;
b) horizontally placing a glass plate, irradiating the through hole from the side direction by using laser, converging a laser point at the middle of the through hole by adjusting the height of the glass plate and a laser galvanometer, and sintering and molding the nano metal paste in the through hole from the middle to two sides in sequence;
c) the glass plate is obliquely placed, the through hole is irradiated from top to bottom by laser, the laser points are converged at the middle of the through hole by adjusting the horizontal position of the glass plate and a laser galvanometer, and the nano metal in the through hole is sintered and molded from the middle to two sides in sequence;
d) the method comprises the steps of horizontally placing a glass plate, downwards irradiating a reflector by using laser, refracting the laser into a through hole by the reflector, converging a laser spot at the middle of the through hole by adjusting the height of the glass plate, the angles and the positions of a laser vibrating mirror and the reflector, and sintering and molding the nano metal paste in the through hole from the middle to two sides in sequence.
6. The method for preparing a deep hole interconnection structure according to claim 1, wherein after the deep hole is completely filled with the nano metal paste, the glass plate is integrally heated, so that the nano metal paste is sintered to form an interconnection line, and the sintering parameters are as follows: the sintering temperature is 200-350 ℃, and the sintering time is 0.1-200 minutes.
7. The method for fabricating a deep via interconnect structure according to claim 1, wherein after the deep via is completely filled with the nano-metal paste, the nano-metal paste is compacted by one of the following methods:
1) applying high pressure and pulse pressure to the nano metal paste in the deep hole to compact the filled nano metal paste;
2) applying ultrasonic wave to the glass plate to compact the nano metal paste in the deep hole;
3) when the deep hole is a blind hole, a flexible gasket is placed on one side of the opening of the blind hole, and instantaneous impulse impact is applied to the side, not opened, of the blind hole, so that the filled nano metal paste is compacted.
8. The method for fabricating a deep via interconnect structure according to claim 7, wherein the compacting process is performed after filling the nano-metal paste or during sintering the deep via.
9. The method of claim 1, wherein the recess comprises a cylindrical or conical hole, and the inner wall of the hole is smooth or has a corrugated shape.
10. The method for preparing the deep hole interconnection structure according to claim 1, wherein the wet cleaning comprises the following specific steps: and soaking the surface to be cleaned by using fluid with oxidizability to oxidize the residual nano metal particles, and then carrying out acid cleaning on the surface to remove the residual nano metal particles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011641344.2A CN112786531B (en) | 2020-12-31 | 2020-12-31 | Method for preparing deep hole interconnection structure based on nano metal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011641344.2A CN112786531B (en) | 2020-12-31 | 2020-12-31 | Method for preparing deep hole interconnection structure based on nano metal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112786531A true CN112786531A (en) | 2021-05-11 |
| CN112786531B CN112786531B (en) | 2022-04-19 |
Family
ID=75753517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011641344.2A Active CN112786531B (en) | 2020-12-31 | 2020-12-31 | Method for preparing deep hole interconnection structure based on nano metal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112786531B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090126627A1 (en) * | 2004-07-26 | 2009-05-21 | University Of Central Florida | Laser assisted nano deposition |
| CN101911293A (en) * | 2007-12-31 | 2010-12-08 | 英特尔公司 | Methods of forming high density metal wiring for fine line and space packaging applications and structures formed thereby |
| CN102915949A (en) * | 2011-08-01 | 2013-02-06 | 中国科学院微电子研究所 | Method for embedding metal material in substrate |
| KR20130023732A (en) * | 2011-08-29 | 2013-03-08 | 한국과학기술원 | Apparatus and method for nanoscale laser sintering of metal nanoparticles |
| CN108550566A (en) * | 2018-04-12 | 2018-09-18 | 中国工程物理研究院电子工程研究所 | The three-dimensional stacked interconnection structure of SiC device based on nano mattisolda and preparation method |
| CN110972403A (en) * | 2019-12-04 | 2020-04-07 | 广东工业大学 | Forming method of fine embedded circuit based on nano copper |
-
2020
- 2020-12-31 CN CN202011641344.2A patent/CN112786531B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090126627A1 (en) * | 2004-07-26 | 2009-05-21 | University Of Central Florida | Laser assisted nano deposition |
| CN101911293A (en) * | 2007-12-31 | 2010-12-08 | 英特尔公司 | Methods of forming high density metal wiring for fine line and space packaging applications and structures formed thereby |
| CN102915949A (en) * | 2011-08-01 | 2013-02-06 | 中国科学院微电子研究所 | Method for embedding metal material in substrate |
| KR20130023732A (en) * | 2011-08-29 | 2013-03-08 | 한국과학기술원 | Apparatus and method for nanoscale laser sintering of metal nanoparticles |
| CN108550566A (en) * | 2018-04-12 | 2018-09-18 | 中国工程物理研究院电子工程研究所 | The three-dimensional stacked interconnection structure of SiC device based on nano mattisolda and preparation method |
| CN110972403A (en) * | 2019-12-04 | 2020-04-07 | 广东工业大学 | Forming method of fine embedded circuit based on nano copper |
Non-Patent Citations (1)
| Title |
|---|
| LENG, YZ等: "Dispensed polymer waveguides and laser-fabricated couplers for optical interconnects on printed circuit boards", 《APPLIED OPTICS》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112786531B (en) | 2022-04-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101958300B (en) | Double-sided graphic chip inversion module packaging structure and packaging method thereof | |
| KR102518207B1 (en) | Molded air cavity packages and methods for the production thereof | |
| CN104051337A (en) | Manufacturing method and testing method for chip package of stereoscopically-stacked integrated circuit system | |
| TWI476877B (en) | Structure and method for air cavity packaging | |
| JP6598642B2 (en) | Resin sealing device and resin sealing method | |
| CN102723293A (en) | Etching-first and packaging-later manufacturing method for chip inversion single-surface three-dimensional circuit and packaging structure of chip formal double-surface three-dimensional circuit | |
| US10727084B2 (en) | Method for creating through-connected vias and conductors on a substrate | |
| CN103021890B (en) | A kind of manufacture method of QFN packaging | |
| CN112786531B (en) | Method for preparing deep hole interconnection structure based on nano metal | |
| CN112820693B (en) | Preparation method of embedded three-dimensional interconnection structure based on nano metal | |
| CN204022464U (en) | Three-dimensional MEMS encapsulating structure | |
| JP4553944B2 (en) | Resin molding method and resin molding apparatus | |
| CN103972111A (en) | Formation method of lead frame structure | |
| JP3677763B2 (en) | Mold for semiconductor device manufacturing | |
| US20170301585A1 (en) | Method for creating through-connected vias and conductors on a substrate | |
| CN103187350B (en) | With silicon wafer attenuation clamp and the reduction process method of the electroplates in hole copper bump | |
| CN202940226U (en) | Package substrate | |
| AU2003214001A1 (en) | Method for producing microsystems | |
| JP3835361B2 (en) | Manufacturing method of three-dimensional shaped object | |
| CN110085528A (en) | A kind of laser processing of wafer bonding | |
| CN107369627B (en) | A kind of three-dimensional stacked level Hermetic Package method | |
| CN112802757B (en) | Substrate preparation method, substrate structure, chip packaging method and chip packaging structure | |
| JP6625774B1 (en) | Hollow package structure and its manufacturing method, and semiconductor device and its manufacturing method | |
| CN102931165B (en) | The manufacture method of base plate for packaging | |
| CN106026959A (en) | Method of 3D printing technology for surface acoustic filter chip packaging manufacturing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |