CN112768353A - Method for improving appearance of metal electrode - Google Patents
Method for improving appearance of metal electrode Download PDFInfo
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- CN112768353A CN112768353A CN202011581872.3A CN202011581872A CN112768353A CN 112768353 A CN112768353 A CN 112768353A CN 202011581872 A CN202011581872 A CN 202011581872A CN 112768353 A CN112768353 A CN 112768353A
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- 239000002184 metal Substances 0.000 title claims abstract description 94
- 238000000034 method Methods 0.000 title claims abstract description 51
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 79
- 238000010438 heat treatment Methods 0.000 claims abstract description 67
- 238000005530 etching Methods 0.000 claims abstract description 21
- 238000001259 photo etching Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 19
- 238000011161 development Methods 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 46
- 238000000151 deposition Methods 0.000 abstract description 8
- 238000002360 preparation method Methods 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 238000009825 accumulation Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
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- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 238000010992 reflux Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
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- 230000003247 decreasing effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
- B81C1/00404—Mask characterised by its size, orientation or shape
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a method for improving the appearance of a metal electrode, which comprises the steps of depositing a metal film, photoetching and developing, heat treatment and etching, a metal film sample is prepared, the effect of continuously adjusting the sharp angle and the steepness of the side wall of a photoresist can be realized by arranging a microstructure pattern of the photoresist layer on the surface of the metal film sample, then adjusting the thickness of the photoresist layer, the temperature, the time and the like of the heat treatment, and the like, then the appearance of the photoresist is completely or locally transferred to the metal film at the lower layer through a mature etching process, the steep angle of the side wall of the metal film sample can be adjusted in a large range, the problem of charge accumulation caused by the sharp angle can be avoided, the manufacturing of an upper functionalized thin film layer and the like is facilitated, the preparation of a multi-layer functional device is facilitated, the process method is simple, and the compatibility of the, is beneficial to the direct introduction and application of the industry.
Description
Technical Field
The invention relates to the technical field of micro-nano machining methods, in particular to a method for improving the appearance of a metal electrode.
Background
With the rapid development of microelectronic technology, the integrated optoelectronic devices tend to be light, small and multifunctional. The development of multifunctional integrated micro devices requires the construction of complicated multilayer structures, such as micro-electromechanical system motors, electrostatic driven MEMS ultra-slide switches, TFT driving circuits, etc., and generally requires the multilayer combination and design of metal electrodes and insulating layers in order to meet the performance requirements, but the problems of short circuit and breakdown among multilayer circuits are a big problem in integrated devices.
The metal electrode manufactured based on the traditional photoetching process is generally in a relatively square metal appearance, has bright edges and corners, and the longitudinal inclination angle of the side wall of the metal pattern is relatively large and is generally more than 80 degrees. The sharp discharge effect of the square metal corner is easy to occur at the microscopic scale, so that the breakdown and short circuit between metal electrode layers are caused, and the deposition thickness of the side wall is far lower than the designed surface deposition thickness when the insulating layer is deposited on the steep side wall.
Therefore, the current common scheme is to select a non-directional Chemical Vapor Deposition (CVD) method to replace the evaporation method, but the CVD deposition requires a higher temperature and has poor process compatibility; there is also a method of increasing the thickness of the insulating layer to ensure that the sidewall-deposited insulating layer can meet the requirements, but the thickness of the surface-deposited insulating layer easily exceeds the designed thickness, which may result in an increase in the applied voltage or a decrease in performance. In summary, for the preparation process of the metal electrode, there are problems of poor uniformity of the surface functional film layer and poor process compatibility.
Disclosure of Invention
The invention aims to provide a method for improving the appearance of a metal electrode, which aims to solve the technical problems of poor uniformity of a surface functional film layer and poor process compatibility in the preparation process of the metal electrode in the prior art.
In order to achieve the purpose, the invention adopts the technical scheme that: the method for improving the appearance of the metal electrode comprises the following steps:
providing a metal film, covering at least one photoresist layer on the metal film, processing the photoresist layer and forming a microstructure pattern;
heat treatment, heating the metal film, and adjusting the steepness and/or sharp angle of the microstructure pattern;
and etching, namely etching the metal film sample by using the photoresist layer as a mask.
Further, the metal film is deposited on the substrate by adopting a deposition process, and a metal film sample is formed.
Further, the microstructure pattern is formed by adopting a photoetching development process.
Further, in the heat treatment step, the heating temperature is 100 ℃ to 160 ℃ and the heating time is 5s to 300 s.
Further, in the heat treatment step, the heating temperature is gradient heating, and preferably, the heating temperature is gradient heating from low to high.
Further, the photoresist layer has a thickness of 0.3 to 10 μm.
Further, the substrate is a metal substrate, and the thickness of the metal film is 30nm to 70 nm.
Further, during the etching step, all the photoresist layers on the metal film are completely etched.
Further, after the etching step, a residue removing step is also included, and the photoresist layer remained on the surface of the metal film sample is removed.
Further, when the residual surface photoresist is removed, wet removal or dry removal is adopted.
The method for improving the appearance of the metal electrode has the beneficial effects that: the method is combined with a thermal reflux process in a photoresist process, a microstructure pattern of a photoresist layer is arranged on the surface of a metal film sample, then the thickness of the photoresist layer, the temperature, the time and the like of heat treatment are adjusted, the effect of continuously adjusting the sharp angle and the steepness of the side wall of the photoresist can be realized, then the appearance of the photoresist is completely or locally transferred to the metal film of the lower layer through a mature etching process, the steep angle of the side wall of the metal film sample can be adjusted in a large range, the problem of charge accumulation caused by the sharp angle can be avoided, the method is favorable for manufacturing an upper functional thin film layer and the like, and is favorable for manufacturing a multi-layer functional device.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a first process flow diagram illustrating a method for improving a morphology of a metal electrode according to an embodiment of the present invention;
FIG. 2 is a second schematic process flow diagram of a method for improving a metal electrode profile according to an embodiment of the present invention;
FIG. 3 is a third schematic process flow diagram of a method for improving a metal electrode morphology according to an embodiment of the present invention;
FIG. 4 is a cross-sectional view of a photoresist before a heat treatment step of a method for improving a metal electrode topography provided in an embodiment of the present invention;
FIG. 5 is a cross-sectional structural diagram of a photoresist heated for 30s at a heating temperature of 120 ℃ according to an embodiment of the present invention;
FIG. 6 is a cross-sectional structural diagram of a photoresist at a heating temperature of 150 ℃ and a heating time of 180s according to an embodiment of the present invention;
fig. 7 is a cross-sectional structural diagram of a photoresist with different thicknesses after heat treatment according to an embodiment of the invention.
Description of reference numerals:
1. a substrate; 2. a metal thin film; 3. and a photoresist layer.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 1 to fig. 7, a method for improving the morphology of a metal electrode according to the present invention will now be described. The method for improving the appearance of the metal electrode comprises the following steps:
s1, depositing the metal film 2, and depositing the metal film 2 on the substrate 1 to form a metal film sample; the substrate 1 is preferably a metal substrate 1, the metal thin film 2 is generally deposited on the substrate 1 by deposition, and the thickness of the metal thin film 2 is generally 30nm to 70 nm.
S2, photoetching and developing, coating a photoresist layer 3 on the metal film sample, wherein the thickness of the photoresist layer 3 is generally 0.3-10 μm; carrying out photoetching development on the photoresist layer 3, so that a corresponding microstructure pattern can be formed on the photoresist layer 3 according to specific requirements; the photoresist layer 3 can be selected to be a positive photoresist or a negative photoresist according to specific situations.
Please refer to fig. 7, which is a trend graph of the steepness and the angle of the photoresist due to different thicknesses after the thermal treatment, wherein the thickness of the photoresist layer 3 may be adjusted according to specific requirements in a specific process. Preferably, the thickness of the photoresist layer 3 is chosen to be 0.4 μm to 10 μm, where the steepness of the photoresist layer 3 is more reasonable in subsequent processing.
S3, heating the substrate 1, adjusting the temperature and time of the heat treatment of the photoresist layer 3, adjusting the steepness and the closed angle of the microstructure pattern on the photoresist layer 3 by utilizing the thermal reflux phenomenon, realizing the continuous adjustment of the closed angle and the side wall steepness of the microstructure pattern on the photoresist layer 3, obtaining the photoresist mask layer with the closed angle in smooth transition, and adjusting the side wall steepness of the photoresist layer 3 according to the specific use requirement.
Wherein, when the substrate 1 is heated, the heating mode can be any one or combination of hot plate heating, oven heating or infrared heating, different heating modes can be selected according to the requirements of the product size and the actual heating temperature,
when the heat treatment is carried out, the selection of the temperature and the heating time is very important, and if the heating temperature is too high or the heating time is too long, the microstructure pattern is collapsed, and the shape of the microstructure pattern is damaged; if the heating temperature is too low or the heating time is too short, the photoresist layer can not be melted, so that thermal reflow is formed, and the steepness and the sharp angle of the photoresist layer can be continuously adjusted. The duration and temperature of the temperature can be adjusted according to the specific required forming angle and straightness, the heating temperature is required to be between 100 ℃ and 160 ℃, and the heating time is controlled to be between 5s and 300 s.
In the heating process, the heating process is the mode of gradient heating, heating temperature can be from low to high gradient heating, perhaps directly adopt target temperature to heat etc, wherein, adopt from low to high temperature's gradient heating, can avoid the photoresist layer tympanic bulla phenomenon that abrupt high temperature arouses, thereby influence the etching operation, can also adopt the mode of heating gradually, adjust the degree of inside thermal reaction, thereby accurate regulation and control is carried out to the straightness accuracy and the closed angle condition of photoresist layer, avoid appearing the condition that straightness accuracy and closed angle do not satisfy the closed angle demand.
And S4, etching, wherein the photoresist layer 3 is used as a mask to etch the metal film sample, and the appearance of the photoresist layer 3 is transferred to the metal film sample. The etching selection ratio of the photoresist layer 3 and the metal film 2 is 0.5-1.5, the etching method can adopt dry etching, such as ion beam etching process, and the etching gas is boron chloride, nitrogen, argon or mixture of any more gases.
The shape of the side wall of the microstructure pattern on the photoresist layer 3 can be controlled by controlling the shape of the microstructure pattern, the side wall steepness of the microstructure pattern can be regulated and controlled, the sharp angle can be improved, the shape of the metal film sample can be controlled, the side wall steepness of the metal film sample can be improved, the sharp angle can be improved, and the preparation of the metal electrode with special shape can be completed.
And S5, removing residues, and removing the residual photoresist layer 3 on the surface of the metal film sample, so that the surface of the metal film sample does not have photoresist, and the property of the whole metal film sample is influenced. As for the photoresist removing method, a conventional wet removing or dry removing process in the prior art may be adopted.
Preferably, during the etching step, all the photoresist layers 3 on the metal film 2 may also be completely etched, so that the surface of the metal film sample does not have photoresist residue, and at this time, the step of removing the residue is not required, and the preparation of the metal electrode can be directly completed.
The microstructure pattern of the photoresist layer 3 is arranged on the surface of the metal film sample, then the temperature and time of heat treatment of the photoresist layer 3 are adjusted, the effect that the sharp angle and the steepness of the side wall of the photoresist layer 3 can be continuously adjusted can be achieved, then the appearance of the photoresist is completely or locally transferred to the metal film 2 on the lower layer through a mature etching process, the adjustment that the steep angle of the side wall of the metal film sample can be in a large range can be achieved, and the problem of charge accumulation caused by the sharp angle can be avoided.
As an alternative to the above-mentioned embodiment, the material of the substrate 1 may also be a non-metallic substrate 1, such as a graphite substrate 1; the thickness of the metal film 2 and the photoresist layer 3 can also be adjusted according to specific requirements.
As an alternative to the above embodiment, in the heat treatment step, the heating manner may also be heating wire heating, liquid heating lamp, according to specific needs, the heating temperature may also be lower than 100 ℃ or higher than 160 ℃, the heating time may also exceed 300s, and the heating manner may also be adjusted according to specific needs.
Further, for the method for improving the morphology of the metal electrode provided by the present invention, the following specific examples are provided:
s1, evaporating an Au metal layer of 200nm on the substrate 1 by using electron beams, thereby forming an Au metal thin film sample;
s2, coating 512 positive photoresist on the Au metal film sample in a rotating manner, wherein the rotating speed of the Au metal film sample is 3000 revolutions, so that the photoresist layer 3 with the thickness of 1.3 mu m is obtained; and carrying out photoetching development on the photoresist layer 3, wherein the photoetching development process parameters are as follows: the contact exposure energy is 20mj/cm2, the developing time is 30s, the developing solution is standard developing solution, and deionized water is used for washing and drying after developing to obtain the photoresist structure shown in figure 4;
s3, heating the substrate 1 by a hot plate, wherein the heating temperature of the hot plate is 105 ℃, and the heating temperature is 30S at 105 ℃, so that the sharp angle of the microstructure pattern can be improved, and the photoresist with the sharp angle in smooth transition is obtained as a mask layer; it is also possible to sequentially obtain microstructure patterns with different steep side wall angles by further setting different temperatures and times, and as shown in fig. 4, a photoresist with the microstructure patterns is used as a mask layer.
Wherein, in fig. 4, the cross-sectional structure of the initial photoresist is shown, the steepness of the sidewall is 82 degrees, and the photoresist has a sharp corner; referring to fig. 5, the cross-sectional structure of the photoresist when heated at 120 degrees for 30 seconds has a sidewall steepness decreasing from 82 degrees to 70 degrees and a sharp corner with certain improvement; referring to FIG. 6, the cross-sectional structure of the photoresist is shown in which the sidewall steepness is further reduced to 40 degrees without sharp corners when the heating temperature is 150 degrees and the heating time is 180 seconds.
Preferably, when the substrate 1 is heated and the thickness of the photoresist is changed from 0.3 μm to 2 μm, the sidewall steepness of the photoresist layer 3 of 0.3 μm can be further reduced to 12 degrees after heating 180s using a high temperature hot plate of 150 degrees, as shown in fig. 5, which is more advantageous for uniform deposition of the surface film layer.
And S4, etching the Au metal film sample by using the photoresist layer 3 as a mask through ion beams, and transferring the appearance of the photoresist layer 3 to the metal film sample.
And S5, removing the residual photoresist layer 3 on the surface of the metal film sample by adopting a wet removal mode, so that the surface of the metal film sample does not have photoresist, and the property of the whole metal film sample is influenced.
By combining the preparation process, the thickness of the photoresist layer 3 and the temperature and time of heat treatment can be adjusted according to specific application scenes, the effect of continuously adjusting the sharp angle of the microstructure pattern and the steepness of the side wall can be realized, the adjustment of the steep angle of the side wall of the metal film sample in a large range can be realized, and the problem of charge accumulation caused by the sharp angle can be avoided.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. The method for improving the appearance of the metal electrode is characterized by comprising the following steps of:
providing a metal film, covering at least one photoresist layer on the metal film, processing the photoresist layer and forming a microstructure pattern;
heat treatment, heating the metal film, and adjusting the steepness and/or sharp angle of the microstructure pattern;
and etching, namely etching the metal film sample by using the photoresist layer as a mask.
2. The method of improving the morphology of a metal electrode according to claim 1, wherein: the metal film is deposited on the substrate by adopting a deposition process, and a metal film sample is formed.
3. The method of improving the morphology of a metal electrode according to claim 1, wherein: the microstructure pattern is formed by adopting a photoetching development process.
4. The method of improving the morphology of a metal electrode according to claim 1, wherein: in the heat treatment step, the heating temperature is 100 ℃ to 160 ℃ and the heating time is 5s to 300 s.
5. The method of improving the morphology of a metal electrode according to claim 1, wherein: in the heat treatment step, the heating temperature is gradient heating, and preferably, the heating temperature is gradient heating from low to high.
6. The method of improving the morphology of a metal electrode according to claim 1, wherein: the photoresist layer has a thickness of 0.3 to 10 μm.
7. The method of improving the morphology of a metal electrode according to claim 2, wherein: the substrate is a metal substrate, and the thickness of the metal film is 30nm to 70 nm.
8. The method of improving the morphology of a metal electrode according to claim 1, wherein: and completely etching all the photoresist layers on the metal film during the etching step.
9. The method of improving the morphology of a metal electrode according to claim 1, wherein: and after the etching step, a residue removing step is further included, and the photoresist layer remained on the surface of the metal film sample is removed.
10. The method of improving the morphology of a metal electrode of claim 9, wherein: and when the residual surface photoresist is removed, wet removal or dry removal is adopted.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113485075A (en) * | 2021-07-08 | 2021-10-08 | 中国科学技术大学 | Preparation method of wedge-shaped structure in spot-size converter and wedge-shaped structure |
| CN113534344A (en) * | 2021-07-16 | 2021-10-22 | 中国科学技术大学 | Manufacturing method of spot size converter and spot size converter |
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2020
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| CN113485075A (en) * | 2021-07-08 | 2021-10-08 | 中国科学技术大学 | Preparation method of wedge-shaped structure in spot-size converter and wedge-shaped structure |
| CN113485075B (en) * | 2021-07-08 | 2022-09-30 | 中国科学技术大学 | Preparation method of wedge-shaped structure in spot-size converter and wedge-shaped structure |
| CN113534344A (en) * | 2021-07-16 | 2021-10-22 | 中国科学技术大学 | Manufacturing method of spot size converter and spot size converter |
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Application publication date: 20210507 |