CN112746292B - Chip copper interconnection electroplating additive, preparation method and application thereof - Google Patents

Chip copper interconnection electroplating additive, preparation method and application thereof Download PDF

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CN112746292B
CN112746292B CN202011542548.0A CN202011542548A CN112746292B CN 112746292 B CN112746292 B CN 112746292B CN 202011542548 A CN202011542548 A CN 202011542548A CN 112746292 B CN112746292 B CN 112746292B
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copper
metal plating
sulfonic acid
acid
inhibitor
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CN112746292A (en
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王溯
孙红旗
田梦照
李鹏飞
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Shanghai Xinyang Semiconductor Material Co Ltd
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Shanghai Xinyang Semiconductor Material Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating

Abstract

The invention disclosesA chip copper interconnection electroplating additive, a preparation method and application thereof. The invention adopts the compound shown as the formula I as the electroplating additive for the chip copper interconnection, and the formed plating layer can have at least one of the following advantages after the prepared metal electroplating composition is electroplated: no void and defect, low plating impurity, good uniform plating property, compact structure and small surface roughness.

Description

Chip copper interconnection electroplating additive, preparation method and application thereof
Technical Field
The invention relates to a chip copper interconnection electroplating additive, a preparation method and application thereof.
Background
With the development of very large scale integrated circuits (VLSI) and ultra large scale integrated circuits (ULSI), the integration level is continuously improved, circuit elements are more and more dense, and chip interconnection becomes a key factor affecting chip performance. The reliability of these interconnect structures plays a very important role in the success of VLSI and ULSI and in the increase of circuit density. However, the shrinking size of interconnect lines in VLSI and ULSI technologies places additional demands on processing capabilities due to size limitations of circuitry. Such requirements include multi-faceting, precise machining of high aspect ratio features, and the like.
As circuit density increases, the line width of the interconnect lines, the size of the contact vias, and other feature sizes decrease, and the thickness of the dielectric layer cannot be scaled down in equal proportion, resulting in an increase in feature aspect ratio. Second, copper has gradually replaced aluminum in the subsequent processing of integrated circuits as the material of choice for the mainstream interconnect technology in very large scale integrated circuit interconnects. In current chip fabrication, the wiring and interconnections of the chip are almost entirely copper plated. The technology node of logic chips has now developed to the 28nm technology level and below, and the product of copper interconnect electroplating additives for this technology level on the market is the pineapple horn, which is extremely difficult with respect to the localization of such products.
However, as the technology nodes of integrated circuits continue to advance, the requirements for filling the nano-scale holes become more and more strict. The research by research staff in various countries can realize the electroplating method, the electroplating solution and the additive which have no holes and defects, low plating impurity, good uniform plating property, compact structure and small surface roughness.
In general, levelers for copper plating provide better leveling of deposits across the substrate surface, but tend to compromise the throwing power of the plating bath. The throwing power is defined as the ratio of the thickness of the copper deposit at the center of the hole to its thickness at the surface.
Disclosure of Invention
The invention aims to overcome one or more defects of void and defect generation, high plating impurity, poor uniform plating property, sparse structure, surface roughness and the like in the prior art when a metal electroplating composition is used for electroplating, and provides a chip copper interconnection electroplating additive, a metal electroplating composition containing the same, and a preparation method and application thereof. The use of the chip copper interconnect plating additive of the present invention has at least one of the following advantages: no void and defect, low plating impurity, good uniform plating property, compact structure and small surface roughness.
The invention provides application of a compound shown in a formula I as a chip copper interconnection electroplating additive, wherein the compound is shown in the formula I:
Figure GDA0003458645070000021
wherein R is 1 、R 2 、R 3 Independently H or halogen;
R 4 is C 1 ～C 4 An alkyl group;
n is an integer of 3 to 10.
In some embodiments of the invention, when R 1 、R 2 、R 3 In the case of halogen, the halogen may be F, cl, br or I, such as Cl or Br.
In some embodiments of the invention, R 4 Methyl, ethyl, propyl or butyl, for example methyl or ethyl.
In some embodiments of the invention, n is 4.
In some embodiments of the invention, the compound of formula I may be:
Figure GDA0003458645070000022
Figure GDA0003458645070000031
Figure GDA0003458645070000032
one or more of the following.
In some embodiments of the invention, the chip copper interconnect plating additive is applied to a metal plating composition.
In some embodiments of the invention, the metal plating composition may be as described below.
The invention also provides a metal electroplating composition, wherein the raw materials of the metal electroplating composition comprise metal copper electroplating liquid and the chip copper interconnection electroplating additive.
In some embodiments of the invention, the metal plating copper solution comprises a copper salt, an acid electrolyte, a source of halide ions, and water.
In some embodiments of the invention, the copper salt may be: one or more of copper sulfate, copper halide, copper acetate, copper nitrate, copper fluoroborate, copper alkyl sulfonate, copper aryl sulfonate, copper sulfamate, and copper gluconate; the copper alkyl sulfonate is preferably selected from one or more of copper methane sulfonate, copper ethane sulfonate and copper propane sulfonate; the copper arylsulfonate is preferably selected from one or more of copper phenylsulfonate, copper phenolsulfonate and copper p-toluenesulfonate. The molar concentration of copper ions in the copper salt is 0.15-2.85mol/L.
In some embodiments of the invention, the acidic electrolyte may be one or more of sulfuric acid, phosphoric acid, acetic acid, fluoroboric acid, sulfamic acid, alkylsulfonic acid, arylsulfonic acid, and hydrochloric acid. The alkyl sulfonic acid is preferably selected from one or more of methane sulfonic acid, ethane sulfonic acid, propane sulfonic acid and trifluoromethane sulfonic acid; the aryl sulphonic acid is preferably selected from one or more of phenyl sulphonic acid, phenol sulphonic acid and toluene sulphonic acid. The mass of the acidic electrolyte is preferably 1 to 300g per liter of the metal plating composition.
In some embodiments of the present invention, the halide ion source may be a chloride ion source, preferably selected from one or more of copper chloride, tin chloride, and hydrochloric acid. The concentration of the halide ion source is preferably 0 to 100ppm, more preferably 50 to 100ppm.
In some embodiments of the invention, the electrolytic copper plating solution is preferably prepared by a method having the brand SYS D 2110, the manufacturer of which is available from Shanghai New cationic semiconductor materials Co., ltd. SYS (System) D 2110 can be prepared by the method disclosed in Chinese patent CN 100529194C.
In some embodiments of the invention, the feedstock for the metal plating composition further comprises an accelerator. The accelerator may be any accelerator conventionally used in the art, such as, for example, the product model UPD3115A (which is available from shanghai new sun semiconductor company), N-dimethyl-dithiocarbamic acid- (3-sulfopropyl) ester, 3-mercapto-propylsulfonic acid- (3-sulfopropyl) ester, sodium 3-mercapto-propylsulfonate, dithio-o-ethyl-s-carbonate and 3-mercapto-1-propane sulfonic acid potassium salt, disulfopropyl disulfide, 3- (benzothiazolyl-s-thio) propylsulfonic acid sodium salt, pyridinium propylsulfobetaine, 1-sodium-3-mercaptopropane-1-sulfonate, N, N-dimethyl-dithiocarbamic acid- (3-sulfoethyl) ester, 3-mercapto-ethyl propyl sulfonic acid- (3-sulfoethyl) ester, 3-mercaptoethyl sulfonic acid sodium salt, carbonic acid-dithio-o-ethyl-s-ester and one or more of 3-mercapto-1-ethane sulfonic acid potassium salt, disulfoethyl disulfide, 3- (benzothiazolyl-s-thio) ethyl sulfonic acid sodium salt, pyridinium ethyl sulfobetaine and 1-sodium-3-mercaptoethane-1-sulfonic acid ester, further for example UPD3115A, N, N-dimethyl-dithiocarbamic acid- (3-sulfopropyl) ester, one or more of 1-sodium-3-mercaptopropane-1-sulfonate and 3- (benzothiazolyl-s-thio) propylsulfonic acid sodium salt.
In some embodiments of the invention, the starting material for the metal plating composition further comprises an inhibitor. The inhibitor may be one or more of the inhibitors conventional in the art, such as the product model UPD3115S (available from shanghai new sun semiconductor company), polypropylene glycol copolymers, polyethylene glycol copolymers, ethylene oxide-propylene oxide (EO/PO) copolymers, and butanol ethylene oxide-propylene oxide copolymers, and further such as one or more of UPD3115S and butanol-ethylene oxide-propylene oxide.
In the present invention, when the inhibitor is butanol-ethylene oxide-propylene oxide, the weight average molecular weight of the inhibitor may be 500 to 20000, for example 1000, 3000 or 10000.
In the present invention, the accelerator may be used in an amount conventional in the art, for example, 5 to 500ppm, and further, for example, 10ppm, 50ppm or 100ppm.
In the present invention, the inhibitor may be used in an amount conventional in the art, for example, 50 to 5000ppm, and further, for example, 100ppm, 500ppm or 1000ppm.
In the present invention, the amount of the copper interconnect plating additive for chips may be conventional in the art, for example, 0.5 to 50ppm, and further, for example, 1ppm, 5ppm or 10ppm.
The invention also provides a metal electroplating composition which consists of a metal copper electroplating solution, a chip copper interconnection electroplating additive, an accelerator and an inhibitor, wherein the definition of the metal copper electroplating solution, the chip copper interconnection electroplating additive, the accelerator and the inhibitor are as described above.
The invention provides a preparation method of a metal electroplating composition, which comprises the following steps of uniformly mixing all raw material components.
The invention provides an application of the metal electroplating composition in a printed circuit board electroplating and integrated circuit copper interconnection electroplating process, wherein the application preferably comprises the following steps:
(1) Contacting a substrate to be electroplated with the foregoing metal plating composition:
(2) And (5) applying current to perform electroplating.
In step (1), the substrate may be any substrate conventionally used in the art, preferably a wafer or chip of a printed circuit board or integrated circuit.
In step (2), the current density of the plating may be conventional in the art, preferably 0.1 to 10ASD, more preferably 0.3 to 5ASD, still more preferably 0.5 to 1.5ASD;
in step (2), the time for the electroplating may be conventional in the art, preferably 53-110s, more preferably 80-110s;
in step (2), the temperature of the plating may be conventional in the art, preferably 10-65deg.C, more preferably 10-35deg.C, and still more preferably 20-30deg.C.
In a preferred embodiment of the invention, the application is preferably carried out in a three-step process:
the current density in the first step is 0.3-0.8ASD, more preferably 0.65ASD, the plating time is 3-20s, more preferably 5s, the plating temperature is 10-65 ℃, more preferably 10-35 ℃, still more preferably 20-30 ℃, for example, may be 25 ℃;
the current density in the second step is 0.5-1.5ASD, more preferably 1.0ASD, the plating time is 30-50s, more preferably 45s, the plating temperature is 10-65 ℃, more preferably 10-35 ℃, still more preferably 20-30 ℃, for example, can be 25 ℃;
the current density in the third step is 1-10ASD, more preferably 6ASD, the plating time is 30-50s, preferably 38s, the plating temperature is 10-65deg.C, more preferably 10-35deg.C, still more preferably 20-30deg.C, for example 25deg.C.
The compound with the structure shown in the formula I is used as the electroplating additive for the chip copper interconnection, and one or more effects of no cavity and defect, low plating impurity, good uniform plating property, compact structure and small surface roughness can be realized. In addition, the electrolytic copper plating solution composition has good thermal reliability and throwing power, can solve the problem of orifice sealing, and has good industrial application value.
In the present invention, the following abbreviations shall have the following meaning a=amperes unless the context clearly indicates otherwise; a/dm 2 =ampere per square decimeter=asd; c = degrees celsius; ppm = parts per million. All amounts are mass percentages unless otherwise indicated.All numerical ranges are inclusive and combinable in any order, but such numerical ranges are limited to a total of 100%.
In the present invention, "feature" refers to a geometric structure on a substrate. "orifice" refers to a recessed feature that includes a through hole and a blind via.
In the present invention, "weight average molecular weight" refers to the statistical average molecular weight of a polymer averaged over the molecular weights of different molecular weights.
The above preferred conditions can be arbitrarily combined on the basis of not deviating from the common knowledge in the art, and thus, each preferred embodiment of the present invention can be obtained.
The reagents and materials used in the present invention are commercially available.
Detailed Description
The invention is further illustrated by means of the following examples, which are not intended to limit the scope of the invention. The experimental methods, in which specific conditions are not noted in the following examples, were selected according to conventional methods and conditions, or according to the commercial specifications.
Preparation examples Metal plating compositions 1-7 and preparation of comparative Metal plating compositions 1-6
The components and amounts of the metal plating compositions 1 to 7 and the comparative metal plating compositions 1 to 6 are shown in Table 1, and the electrolytic copper plating solution, the leveler, the accelerator and the retarder are mixed. The metal ion source and the electrolyte are selected from the group consisting of SYS D 2110 is available from Shanghai New cationic semiconductor materials Co., ltd. Accelerators under the trade designation UPD3115A are available from Shanghai New semiconductor materials Co. Inhibitors of the brand UPD3115S are available from Shanghai New semiconductor materials Co.
Compound P-15
Figure GDA0003458645070000071
Compound P-16
Figure GDA0003458645070000072
TABLE 1
Figure GDA0003458645070000073
/>
Figure GDA0003458645070000081
Application examples 1 to 7 and comparative application examples 1 to 6
In the present invention, application examples 1 to 7 and comparative application examples 1 to 6 were conducted using metal plating compositions 1 to 7 and comparative metal plating compositions 1 to 6, respectively.
The plating parameters are shown in table 2.
TABLE 2
Figure GDA0003458645070000082
Figure GDA0003458645070000091
/>
The plating test procedure is shown in table 3.
TABLE 3 Table 3
Figure GDA0003458645070000092
Application effects coating impurity levels are shown in table 4.
TABLE 4 Table 4
Figure GDA0003458645070000093
The filling rate, the cavity condition, the structure compactness and the surface roughness are observed by an SEM electron microscope, and the experimental results are shown in Table 5.
Figure GDA0003458645070000101
/>

Claims (12)

1. A metal plating composition, wherein the raw materials of the metal plating composition comprise a chip copper interconnect plating additive and a metal plating copper solution; the chip copper interconnection electroplating additive is a compound of formula I:
Figure FDA0004117176840000011
wherein R is 1 、R 2 、R 3 Independently H or halogen;
R 4 is C 1 ～C 4 An alkyl group;
n is an integer from 3 to 10;
alternatively, the chip copper interconnection electroplating additive is
Figure FDA0004117176840000012
2. The metal plating composition of claim 1, wherein when R 1 、R 2 、R 3 When the halogen is halogen, the halogen is F, cl, br or I;
and/or R 4 Methyl, ethyl, propyl or butyl;
and/or n is 4.
3. The metal plating composition of claim 1, wherein when R 1 、R 2 、R 3 When the halogen is halogen, the halogen is Cl or Br;
and/or R 4 Is methyl or ethyl.
4. The metal plating composition of claim 1, wherein the compound of formula I is:
Figure FDA0004117176840000021
/>
Figure FDA0004117176840000022
one or more of the following.
5. The metal plating composition of claim 1, wherein the metal plating copper solution comprises a copper salt, an acidic electrolyte, a source of halide ions, and water.
6. The metal plating composition of claim 5, wherein the copper salt is: one or more of copper sulfate, copper halide, copper acetate, copper nitrate, copper fluoroborate, copper alkyl sulfonate, copper aryl sulfonate, copper sulfamate, and copper gluconate;
and/or the molar concentration of copper ions in the copper salt is 0.15-2.85mol/L;
and/or the acidic electrolyte is one or more of sulfuric acid, phosphoric acid, acetic acid, fluoboric acid, sulfamic acid, alkylsulfonic acid, arylsulfonic acid and hydrochloric acid;
and/or the acidic electrolyte is present in an amount of 1 to 300g per liter of the metal plating composition;
and/or, the halide ion source is a chloride ion source;
and/or the concentration of halide ions of the halide ion source is 0-100ppm;
and/or, the metal plating solution is provided by a copper plating solution with the brand SYSD 2110;
and/or, the raw materials of the metal electroplating composition further comprise an accelerator;
and/or, the raw materials of the metal plating composition further comprise inhibitors.
7. The metal plating composition of claim 6, wherein the copper alkyl sulfonate is one or more of copper methane sulfonate, copper ethane sulfonate, and copper propane sulfonate;
and/or the aryl sulfonic acid copper is one or more of phenyl sulfonic acid copper, phenol sulfonic acid copper and p-toluene sulfonic acid copper;
and/or the alkyl sulfonic acid is one or more of methane sulfonic acid, ethane sulfonic acid, propane sulfonic acid and trifluoromethane sulfonic acid;
and/or the aryl sulfonic acid is one or more of phenyl sulfonic acid, phenol sulfonic acid and toluene sulfonic acid;
and/or the chloride ion source is one or more of copper chloride, tin chloride and hydrochloric acid;
and/or the concentration of halide ions of the halide ion source is 50-100ppm;
and/or the accelerator is one or more of UPD3115A, N, N-dimethyl-dithiocarbamic acid- (3-sulfopropyl) ester, 3-mercapto-propylsulfonic acid- (3-sulfopropyl) ester, 3-mercapto-propylsulfonate, dithio-o-ethyl-s-ester and 3-mercapto-1-propane sulfonic acid potassium salt, disulfopropyl disulfide, 3- (benzothiazolyl-s-thio) propylsulfonic acid sodium salt, pyridinium propylsulfobetaine, 1-sodium-3-mercaptopropane-1-sulfonic acid ester, N-dimethyl-dithiocarbamic acid- (3-sulfoethyl) ester, 3-mercapto-ethylpropyl sulfonic acid- (3-sulfoethyl) ester, 3-mercapto-o-ethyl-s-ester and 3-mercapto-1-ethane sulfonic acid potassium salt, disulfoethyl disulfide, 3- (benzothiazolyl-s-thio) ethyl sulfonic acid sodium salt, pyridinium ethyl sulfobetaine and 1-3-mercapto-1-ethane sulfonic acid ester;
and/or the inhibitor is one or more of UPD3115S, polypropylene glycol copolymer, polyethylene glycol copolymer, ethylene oxide-propylene oxide copolymer and butanol ethylene oxide-propylene oxide copolymer;
and/or, when the inhibitor is butanol-ethylene oxide-propylene oxide, the weight average molecular weight of the inhibitor is 500-20000;
and/or the usage amount of the accelerator is 5-500 ppm;
and/or the dosage of the inhibitor is 50-5000 ppm;
and/or the consumption of the chip copper interconnection electroplating additive is 0.5-50 ppm.
8. The metal plating composition of claim 7, wherein the accelerator is one or more of UPD3115A, N, N-dimethyl-dithiocarbamic acid- (3-sulfopropyl) ester, 1-sodium-3-mercaptopropane-1-sulfonate, and 3- (benzothiazolyl-s-thio) propylsulfonic acid sodium salt;
and/or the inhibitor is one or more of UPD3115S and butanol-ethylene oxide-propylene oxide;
and/or, when the inhibitor is butanol-ethylene oxide-propylene oxide, the weight average molecular weight of the inhibitor is 500-20000;
and/or the accelerator is used in an amount of 10ppm, 50ppm or 100ppm;
and/or the inhibitor is used in an amount of 100ppm, 500ppm or 1000ppm;
and/or the chip copper interconnect plating additive is used in an amount of 1ppm, 5ppm or 10ppm.
9. The metal plating composition according to claim 7, wherein when the inhibitor is butanol-ethylene oxide-propylene oxide, the weight average molecular weight of the inhibitor is 1000, 3000 or 10000.
10. The metal plating composition according to claim 1, wherein the metal plating composition is composed of a metal plating copper solution, a chip copper interconnect additive, an accelerator and an inhibitor, wherein the metal plating copper solution, the chip copper interconnect additive are as defined in any one of claims 1 to 9, and the accelerator and the inhibitor are as defined in claim 7 or 8.
11. The metal plating composition according to claim 1, wherein the method for preparing the metal plating composition comprises the steps of: mixing the raw materials uniformly.
12. Use of a metal plating composition according to any of claims 1 to 11 in a printed circuit board plating and integrated circuit copper interconnect plating process.
CN202011542548.0A 2020-12-21 2020-12-21 Chip copper interconnection electroplating additive, preparation method and application thereof Active CN112746292B (en)

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