CN112795960B - Chip copper interconnection electroplating additive, preparation method and application thereof - Google Patents

Chip copper interconnection electroplating additive, preparation method and application thereof Download PDF

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CN112795960B
CN112795960B CN202011542530.0A CN202011542530A CN112795960B CN 112795960 B CN112795960 B CN 112795960B CN 202011542530 A CN202011542530 A CN 202011542530A CN 112795960 B CN112795960 B CN 112795960B
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copper
metal plating
sulfonic acid
plating composition
acid
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CN112795960A (en
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王溯
孙红旗
田梦照
李鹏飞
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Shanghai Xinyang Semiconductor Material Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper

Abstract

The invention discloses a chip copper interconnection electroplating additive, a preparation method and application thereof. The compound shown as the formula I is used as a chip copper interconnection electroplating additive, and the prepared metal electroplating composition is electroplated to form the chip copper interconnection electroplating additiveThe coating may have at least one of the following advantages: no void and defect, low impurity of plating layer, good uniform plating property, compact structure and small surface roughness.

Description

Chip copper interconnection electroplating additive, preparation method and application thereof
Technical Field
The invention relates to a chip copper interconnection electroplating additive, a preparation method and application thereof.
Background
With the development of Very Large Scale Integrated (VLSI) and Ultra Large Scale Integrated (ULSI) circuits, the integration level is continuously increased, the circuit components are more and more dense, and chip interconnection becomes a key factor affecting the performance of chips. The reliability of these interconnect structures plays a very important role in the success of VLSI and ULSI and in the increase of circuit density. However, due to the size limitations of circuitry, the shrinking dimensions of interconnect lines in VLSI and ULSI technologies place additional demands on process capability. Such requirements include the precision machining of multi-level, high aspect ratio features, and the like.
As circuit density increases, interconnect line widths, contact via sizes, and other feature sizes decrease, while dielectric layer thicknesses do not scale down, resulting in increased feature aspect ratios. Second, copper has gradually replaced aluminum as the mainstream interconnect technology in VLSI interconnects in integrated circuit back-end-of-line processes. In current chip fabrication, almost all of the wiring and interconnections of the chip are copper plated. The logic chip technology node has developed to the technology level of 28nm and below, and the products of copper interconnection electroplating additive on the market aiming at the technology level have the feather unicorn, and the localization of the products is very hard.
However, as the technology nodes of integrated circuits are continuously advanced, the filling requirements for the nano-scale holes are more and more strict. Research and development personnel in various countries strive for an electroplating method, an electroplating solution and an additive which have no holes and defects, low plating impurities, good uniform plating property, compact structure and small surface roughness.
In general, electroplating additives for chip copper interconnects provide better leveling of deposits across the substrate surface, but tend to compromise the throwing power of the electroplating bath. Throwing power is defined as the ratio of the thickness of the copper deposit in the center of the hole to the thickness at its surface.
Disclosure of Invention
The invention aims to solve the technical problem of overcoming one or more defects of generation of cavities and defects, high impurity content of a plating layer, poor plating uniformity, sparse structure, surface roughness and the like in the electroplating of a metal electroplating composition in the prior art, and provides a chip copper interconnection electroplating additive, a preparation method and application thereof. The use of the metal plating composition of the present invention may have at least one of the following advantages: no holes and defects, low impurity content of the plating layer, good uniform plating property, compact structure and small surface roughness.
The invention provides an application of a compound shown as a formula I as a chip copper interconnection electroplating additive:
Figure GDA0003460359410000021
wherein R is 1 、R 2 、R 3 Independently H, -NO 2 Or halogen;
r, R' is independently H or
Figure GDA0003460359410000022
And R, R' are not H or->
Figure GDA0003460359410000023
R 4 、R 5 Independently is C 1 ～C 4 An alkyl group;
n is an integer of 5 to 14.
In some embodiments of the invention, when R 1 、R 2 、R 3 When halogen, the halogen may be F, cl, br or I, for example Cl or Br.
In some embodiments of the invention, R 4 、R 5 Independently is methylEthyl, propyl or butyl, for example methyl or ethyl.
In some embodiments of the invention, n may be from 6 to 11, for example 6 or 11.
In some embodiments of the invention, the compound of formula I may be:
Figure GDA0003460359410000031
/>
Figure GDA0003460359410000041
one or more than one.
In some embodiments of the invention, the chip copper interconnect electroplating additive is applied to a metal electroplating composition.
In some embodiments of the invention, the metal plating composition can be as described below.
The invention also provides a metal plating composition, wherein the raw materials of the metal plating composition comprise a metal copper plating solution and the chip copper interconnection plating additive.
In some embodiments of the present invention, the metal electrocoppering bath comprises a copper salt, an acidic electrolyte, a halide ion source, and water.
In some embodiments of the present invention, the copper salt may be: one or more of copper sulfate, copper halide, copper acetate, copper nitrate, copper fluoroborate, copper alkylsulfonate, copper arylsulfonate, copper sulfamate, and copper gluconate; the copper alkyl sulfonate is preferably selected from one or more of copper methane sulfonate, copper ethane sulfonate and copper propane sulfonate; the copper arylsulfonate is preferably selected from one or more of copper phenylsulfonate, copper phenolsulfonate and copper p-toluenesulfonate. The molar concentration of copper ions in the copper salt is 0.15-2.85mol/L.
In some embodiments of the invention, the acidic electrolyte may be one or more of sulfuric acid, phosphoric acid, acetic acid, fluoroboric acid, sulfamic acid, alkylsulfonic acid, arylsulfonic acid, and hydrochloric acid. The alkyl sulfonic acid is preferably selected from one or more of methane sulfonic acid, ethane sulfonic acid, propane sulfonic acid and trifluoromethane sulfonic acid; the aryl sulphonic acid is preferably selected from one or more of phenyl sulphonic acid, phenol sulphonic acid and toluene sulphonic acid. The mass of the acid electrolyte is preferably 1-300g per liter of the metal plating composition.
In some embodiments of the invention, the halide ion source may be a chloride ion source, preferably selected from one or more of copper chloride, tin chloride and hydrochloric acid. The concentration of the halide ion source is preferably 0 to 100ppm, more preferably 50 to 100ppm.
In some embodiments of the present invention, the metal electroplating bath is preferably provided by the metal electroplating bath having the designation SYSD2110, manufactured by Shanghai Xinyang semiconductor materials, inc. SYSD2110 can be prepared by referring to the method disclosed in Chinese patent CN 100529194C.
In some embodiments of the present invention, the starting material of the metal plating composition further comprises an accelerator. The accelerator may be one conventional in the art, for example, product types UPD3115A (which is available from Shanghai Xinyang semiconductor Co., ltd.), N-dimethyl-dithiocarbamic acid- (3-sulfopropyl) ester, 3-mercapto-propyl sulfonic acid sodium salt, dithio-o-ethyl ester-s-carbonate with 3-mercapto-1-propane sulfonic acid potassium salt, bissulfopropyl disulfide, 3- (benzothiazol-s-thio) propyl sulfonic acid sodium salt, pyridinium propyl sulfobetaine, 1-sodium-3-mercaptopropane-1-sulfonic acid ester, N, N-dimethyl-dithiocarbamic acid- (3-sulfoethyl) ester, 3-mercapto-ethylpropylsulfonic acid- (3-sulfoethyl) ester, 3-mercaptoethylsulfonic acid sodium salt, carbonic acid-dithio-o-ethyl ester-s-ester with 3-mercapto-1-ethanesulfonic acid potassium salt, disulfoethyl disulfide, 3- (benzothiazolyl-s-thio) ethylsulfonic acid sodium salt, pyridinium ethylsulfobetaine, and 1-sodium-3-mercaptoethane-1-sulfonate, and further, for example, UPD3115A, N, N-dimethyl-dithiocarbamic acid- (3-sulfopropyl) ester, 1-sodium-3-mercaptopropane-1-sulfonate, and 3- (benzothiazolyl-s-thio) One or more of propyl sulfonic acid sodium salt.
In some embodiments of the present invention, the starting material of the metal plating composition further comprises an inhibitor. The inhibitor may be one conventional in the art, such as one or more of product model number UPD3115S (available from Shanghai Xinyang semiconductor), polypropylene glycol copolymer, polyethylene glycol copolymer, ethylene oxide-propylene oxide (EO/PO) copolymer, and Butanol ethylene oxide-propylene oxide yard copolymer, and one or more of UPD3115S and Butanol ethylene oxide-propylene oxide.
In the present invention, when the inhibitor is butanol-ethylene oxide-propylene oxide, the weight average molecular weight of the inhibitor may be 500 to 20000, for example 1000, 3000 or 10000.
In the present invention, the accelerator may be used in an amount conventional in the art, for example, in an amount of 5 to 500ppm, and further, for example, 10ppm, 50ppm or 100ppm.
In the present invention, the inhibitor may be used in an amount conventional in the art, for example, 50 to 5000ppm, and further, for example, 100ppm, 500ppm or 1000ppm.
In the present invention, the amount of the chip copper interconnect plating additive may be an amount conventionally used in the art, such as 0.5 to 50ppm, and further such as 1ppm, 5ppm or 10ppm.
The invention also provides a metal electroplating composition which consists of the metal copper electroplating solution, the chip copper interconnection electroplating additive, the accelerator and the inhibitor, wherein the metal copper electroplating solution, the chip copper interconnection electroplating additive, the accelerator and the inhibitor are defined as above.
The invention provides a preparation method of a metal electroplating composition, which comprises the following step of uniformly mixing raw material components.
The invention provides an application of the metal electroplating composition in electroplating of a printed circuit board and electroplating of copper interconnection of an integrated circuit, and the application preferably comprises the following steps:
(1) Contacting the substrate to be plated with the aforementioned metal plating composition:
(2) Applying current to perform electroplating.
In step (1), the substrate may be any substrate conventionally used in the art, preferably a wafer or chip of a printed circuit board or an integrated circuit.
In step (2), the current density of the electroplating may be conventional in the art, and is preferably 0.1-10ASD, more preferably 0.3-5ASD, and still more preferably 0.5-1.5ASD;
in the step (2), the time for electroplating can be conventional in the art, and is preferably 53-110s, and is preferably 80-110s;
in step (2), the temperature of the electroplating may be conventional in the art, and is preferably 10 to 65 ℃, more preferably 10 to 35 ℃, and still more preferably 20 to 30 ℃.
In a preferred embodiment of the present invention, the application is preferably performed in three steps:
the current density of the first step is 0.3-0.8ASD, more preferably 0.65ASD, the plating time is 3-20s, more preferably 5s, the plating temperature is 10-65 ℃, more preferably 10-35 ℃, further more preferably 20-30 ℃, for example 25 ℃;
the current density of the second step is 0.5-1.5ASD, more preferably 1.0ASD, the plating time is 30-50s, more preferably 45s, the plating temperature is 10-65 ℃, more preferably 10-35 ℃, further more preferably 20-30 ℃, for example 25 ℃;
the current density of the third step is 1-10ASD, preferably 6ASD, the plating time is 30-50s, preferably 38s, and the plating temperature is 10-65 deg.C, preferably 10-35 deg.C, further preferably 20-30 deg.C, for example 25 deg.C.
The compound with the structure of formula I is used as the chip copper interconnection electroplating additive, so that one or more effects of no cavity and defect, low plating impurity, good plating uniformity, compact structure and small surface roughness can be realized. In addition, the metal electroplating liquid composition has good thermal reliability and uniform plating capacity, can solve the problem of orifice sealing, and has good industrial application value.
In the present invention, the following abbreviations shall have the following meaning a = ampere; a/dm 2 = ampere per square decimeter = ASD; DEG C = degree centigrade; ppm = parts per million. Unless otherwise indicatedNote that all amounts are mass percentages otherwise. All numerical ranges are inclusive and combinable in any order, but such numerical ranges are limited to 100% total.
In the present invention, "feature" refers to a geometric structure on a substrate. "aperture" refers to a recessed feature comprising a through hole and a blind channel.
In the present invention, "weight average molecular weight" means a statistical average molecular weight averaged with the weight of molecules of different molecular weights in a polymer.
The above preferred conditions can be arbitrarily combined to obtain preferred embodiments of the present invention without departing from the common general knowledge in the art.
The reagents and starting materials used in the present invention are commercially available.
Detailed Description
The invention is further illustrated by the following examples, which are not intended to limit the scope of the invention. Experimental procedures without specifying specific conditions in the following examples were selected in accordance with conventional procedures and conditions, or in accordance with commercial instructions.
Preparation of example Metal plating compositions 1-7 and preparation of comparative Metal plating compositions 1-6
The components and amounts of the metal plating compositions 1-7 and comparative metal plating compositions 1-6 are shown in Table 1, and the metal plating solution, chip copper interconnect plating additives, accelerators and suppressors are mixed. The metal ion source and the electrolyte are made of SYS D 2110 of the above list was supplied from Shanghai Xinyang semiconductor materials, inc. An accelerator, under the designation UPD3115A, available from Shanghai Xinyang semiconductor materials, inc. Inhibitor, brand UPD3115S, available from Shanghai Xinyang semiconductor materials, inc.
Compound P-7
Figure GDA0003460359410000081
Compound P-8
Figure GDA0003460359410000082
Compound P-12
Figure GDA0003460359410000083
Compound P-13
Figure GDA0003460359410000084
Compound P-17
Figure GDA0003460359410000085
Compound P-19
Figure GDA0003460359410000091
TABLE 1
Figure GDA0003460359410000092
/>
Figure GDA0003460359410000101
Application examples 1 to 7 and comparative application examples 1 to 6
In the present invention, application examples 1 to 7 and comparative application examples 1 to 6 were carried out using metal plating compositions 1 to 7 and comparative metal plating compositions 1 to 6, respectively.
The plating parameters are shown in table 2.
TABLE 2
Figure GDA0003460359410000102
The plating test procedure is shown in table 3.
TABLE 3
Figure GDA0003460359410000103
/>
Figure GDA0003460359410000111
Effect of application the impurity content of the coating is shown in table 4.
TABLE 4
Figure GDA0003460359410000112
The filling rate, the cavity condition, the structural compactness and the surface roughness are observed by adopting an SEM electron microscope, and the experimental results are shown in Table 5.
Figure GDA0003460359410000113
/>
Figure GDA0003460359410000121
/>

Claims (12)

1. A metal plating composition, wherein the raw materials of the metal plating composition comprise a chip copper interconnection plating additive and a metal copper plating solution; the chip copper interconnection electroplating additive is a compound shown in formula I:
Figure FDA0004074681380000011
wherein R is 1 、R 2 、R 3 Independently H, -NO 2 Or halogen;
r, R' is independently H or
Figure FDA0004074681380000012
And R, R' are not H or->
Figure FDA0004074681380000013
R 4 、R 5 Independently is C 1 ～C 4 An alkyl group;
n is an integer of 5 to 14.
2. The metal plating composition of claim 1, wherein when R is 1 、R 2 、R 3 When the halogen is F, cl, br or I;
and/or, R 4 、R 5 Independently methyl, ethyl, propyl or butyl;
and/or n is 6 to 11.
3. The metal plating composition of claim 1, wherein when R is 1 、R 2 、R 3 When the halogen is Cl or Br;
and/or, R 4 、R 5 Independently methyl or ethyl;
and/or n is 6 or 11.
4. A metal plating composition, wherein the raw materials of the metal plating composition comprise chip copper interconnection plating additives and metal copper plating solution; the chip copper interconnect electroplating additive is a compound of formula I, wherein the compound of formula I is independently:
Figure FDA0004074681380000021
/>
Figure FDA0004074681380000031
one or more ofAnd (4) respectively.
5. The metal plating composition of claim 1 or 4, wherein the metal plating copper bath comprises a copper salt, an acidic electrolyte, a halide ion source, and water.
6. The metal plating composition of claim 5, wherein the copper salt is one or more of copper sulfate, copper halide, copper acetate, copper nitrate, copper fluoroborate, copper alkylsulfonate, copper arylsulfonate, copper sulfamate, and copper gluconate;
and/or the molar concentration of copper ions in the copper salt is 0.15-2.85mol/L;
and/or the acidic electrolyte is one or more of sulfuric acid, phosphoric acid, acetic acid, fluoroboric acid, sulfamic acid, alkyl sulfonic acid, aryl sulfonic acid and hydrochloric acid;
and/or the acid electrolyte has a mass of 1-300g per liter of the metal plating composition;
and/or, the halide ion source is a chloride ion source;
and/or the concentration of halide ions of the halide ion source is 0-100ppm;
and/or the metal copper electroplating solution is provided by a copper electroplating solution with the mark number of SYSD 2110;
and/or, the raw material of the metal plating composition also comprises an accelerator;
and/or, the raw material of the metal plating composition further comprises an inhibitor.
7. The metal plating composition of claim 6, wherein the copper alkyl sulfonate is one or more of copper methane sulfonate, copper ethane sulfonate, and copper propane sulfonate;
and/or the copper arylsulfonate is one or more of copper phenylsulfonate, copper phenolsulfonate and copper p-toluenesulfonate;
and/or the alkyl sulfonic acid is one or more of methane sulfonic acid, ethane sulfonic acid, propane sulfonic acid and trifluoromethane sulfonic acid;
and/or the aryl sulfonic acid is one or more of phenyl sulfonic acid, phenol sulfonic acid and toluene sulfonic acid;
and/or the source of chloride ions is one or more of copper chloride, tin chloride and hydrochloric acid;
and/or the concentration of halide ions of the halide ion source is 50-100ppm;
and/or the accelerator is one or more of product model numbers UPD3115A, N, N-dimethyl-dithiocarbamic acid- (3-sulfopropyl) ester, 3-mercapto-propylsulfonic acid- (3-sulfopropyl) ester, 3-mercapto-propylsulfonate sodium salt, dithio-o-ethyl carbonate-s-ester with 3-mercapto-1-propane sulfonic acid potassium salt, bis-sulfopropyl disulfide, 3- (benzothiazolyl-s-thio) propyl sulfonic acid sodium salt, pyridinium propyl sulfobetaine, 1-sodium-3-mercaptopropane-1-sulfonate, N-dimethyl-dithiocarbamic acid- (3-sulfoethyl) ester, 3-mercapto-ethylpropyl sulfonic acid- (3-sulfoethyl) ester, 3-mercaptoethyl sulfonic acid sodium salt, dithio-o-ethyl carbonate-s-ester with 3-mercapto-1-ethane potassium salt, bis-sulfoethyl disulfide, 3- (benzothiazolyl-s-thio) ethyl sulfonic acid sodium salt, pyridinium ethyl sulfobetaine and 1-sodium-3-mercapto-1-ethane sulfonic acid;
and/or the inhibitor is one or more of UPD3115S, polypropylene glycol copolymer, polyethylene glycol copolymer, ethylene oxide-propylene oxide copolymer and butanol ethylene oxide-propylene oxide copolymer;
and/or the dosage of the accelerator is 5-500 ppm;
and/or the dosage of the inhibitor is 50-5000 ppm;
and/or the dosage of the chip copper interconnection electroplating additive is 0.5-50 ppm.
8. The metal plating composition of claim 7, wherein the accelerator is one or more of UPD3115A, N, N-dimethyl-dithiocarbamic acid- (3-sulfopropyl) ester, 1-sodium-3-mercaptopropane-1-sulfonate, and 3- (benzothiazolyl-s-thio) propyl sulfonic acid sodium salt;
and/or, the inhibitor is one or more of UPD3115S and butanol-ethylene oxide-propylene oxide;
and/or, when the inhibitor is butanol-ethylene oxide-propylene oxide, the weight average molecular mass of the inhibitor is 500-20000;
and/or the amount of the accelerator is 10ppm, 50ppm or 100ppm;
and/or the inhibitor is used in an amount of 100ppm, 500ppm or 1000ppm;
and/or the amount of the chip copper interconnection electroplating additive is 1ppm, 5ppm or 10ppm.
9. The metal plating composition of claim 7 wherein when said suppressor is butanol-ethylene oxide-propylene oxide, said suppressor has a weight average molecular mass of 1000, 3000 or 10000.
10. The metal plating composition of claim 1 or 4, wherein the metal plating composition is comprised of a metal copper plating bath, a chip copper interconnect additive, an accelerator and a suppressor, wherein the metal copper plating bath and the chip copper interconnect additive are as defined in any one of claims 1 to 9, and the accelerator and the suppressor are as defined in claim 7 or 8.
11. The metal plating composition of claim 1 or 4, wherein the metal plating composition is prepared by a method comprising the steps of: the raw material components are uniformly mixed.
12. The metal plating composition of claim 1 or 4, wherein the metal plating composition is used in a process for plating printed circuit boards and plating copper interconnects of integrated circuits.
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