CN112713209B - Digital alloy and digital alloy medium wave infrared detector - Google Patents

Digital alloy and digital alloy medium wave infrared detector Download PDF

Info

Publication number
CN112713209B
CN112713209B CN202011597283.4A CN202011597283A CN112713209B CN 112713209 B CN112713209 B CN 112713209B CN 202011597283 A CN202011597283 A CN 202011597283A CN 112713209 B CN112713209 B CN 112713209B
Authority
CN
China
Prior art keywords
layer
type
thickness
inassb
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011597283.4A
Other languages
Chinese (zh)
Other versions
CN112713209A (en
Inventor
陈意桥
张国祯
陈超
周浩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Kunyuan Photoelectric Co ltd
Original Assignee
Suzhou Kunyuan Photoelectric Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Kunyuan Photoelectric Co ltd filed Critical Suzhou Kunyuan Photoelectric Co ltd
Priority to CN202011597283.4A priority Critical patent/CN112713209B/en
Publication of CN112713209A publication Critical patent/CN112713209A/en
Application granted granted Critical
Publication of CN112713209B publication Critical patent/CN112713209B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

The invention provides a digital alloy AlAsSb material and a digital alloy medium wave infrared detector aiming at the defect that a higher valence band order exists in an absorption layer and a barrier layer of the prior barrier type device, so that a cavity is hindered by a valence band barrier in the motion process and the quantum efficiency is reduced, wherein the digital alloy grows a layer of AlAsxSb1-x material with the thickness of d2 on a layer of AlSb material with the thickness of d1 to form AlAsySb1-y basic units with the thickness of d1+ d2, the d1+ d2 is used As a period and repeatedly grows for n periods to form a digital alloy DA-AlAsySb1-y, wherein y is the integral average As component in the digital alloy, and x is the As component in one layer of the basic units, the digital alloy and the digital alloy medium wave infrared detector provided by the invention ensure that the cavity moves more smoothly, and the quantum efficiency of the detector can be effectively improved, and has no influence on the dark current of the device, so that the device can be more easily adapted to different absorption layers.

Description

Digital alloy and digital alloy medium wave infrared detector
Technical Field
The invention relates to a digital alloy material and a medium-wave infrared detector with the digital alloy material.
Background
The medium wave infrared detector with the detection wavelength of 3-5 microns is widely applied to the fields of aerospace, satellite reconnaissance, accurate guidance, night vision imaging and the like. Currently, the InSb and HgCdTe-based mid-wave infrared detectors which are dominant in performance are excellent, but need to work in a low-temperature environment of about 80k, so that the requirements on a refrigerator are high, and the detectors are large in overall size, heavy in weight, high in power consumption and high in cost. The size, the weight, the power consumption and the cost of the detector are reduced, the reliability is improved, the application range of the detector can be greatly expanded, and the detector can be applied to the fields of handheld detectors, sighting devices, micro unmanned aerial vehicles and the like. The key to improving the reliability, reducing the size, weight, power consumption and cost of the detector is to increase the operating temperature (HOT) of the detector chip.
One solution to increase the operating temperature of the detector chip is to fabricate barrier devices. For medium wave detectors with 50% cut-off wavelength of 3-5 microns, InAsSb based materials are typically used as the absorption layer of the detector. The wide-bandgap AlAsSb barrier layer is introduced, and the depletion region can be excluded from the absorption layer and enter the barrier layer through doping regulation, so that the dark current can be effectively reduced at the same working temperature, and the device can work in a high-temperature section.
For example, for a medium-wave infrared detector XBn structure, in the prior art, an AlAsSb body material blk-AlAsSb is used as a detector barrier layer, and an InAsSb body material blk-InAsSb is used as an absorption layer, and an energy band structure thereof is shown in fig. 1. When the detector works, the absorption layer is excited by light to generate electron-hole pairs. The electrons are collected by the n-type contact layer and the holes are collected by the p-type contact layer. According to theoretical calculation, a 61meV valence band order exists between the blk-InAsSb absorption layer and the blk-AlAsSb barrier layer, and holes are hindered by the valence band barrier in the motion process, so that the quantum efficiency is reduced.
In addition, in the prior art, blk-AlAsSb is used As an absorption layer, the As component content in the blk-AlAsSb is 0.08, the component content is extremely low, and the As component needs to be accurately controlled, so that the device is not suitable for mass production, and the practical application of the material is hindered.
Disclosure of Invention
The invention aims to provide a digital alloy AlAsSb material and a digital alloy medium wave infrared detector aiming at the defect that a higher valence band order exists between an absorption layer and a barrier layer of the existing barrier type device, so that a hole is hindered by a valence band barrier in the motion process and the quantum efficiency is reduced.
The purpose of the invention is realized by the following technical scheme:
a digital alloy is prepared by growing a layer of AlAsxSb1-x material with the thickness of d2 on a layer of AlSb material with the thickness of d1 to form AlAsySb1-y basic units with the thickness of d1+ d2, and repeatedly growing n periods by using d1+ d2 As a period to form the digital alloy DA-AlAsySb1-y, wherein y is the overall average As component in the digital alloy, and x is the As component in one layer of the basic units;
the relationship between the overall average As component y in the digital alloy and the As component x in one layer of the basic unit is As follows:
Figure GDA0003560846980000021
carrying out p-type doping on DA-AlAsSb, wherein the dopant is Be, and the p-type concentration range is as follows: 1E +15-5E +18/cm3；
Carrying out n-type doping on DA-AlAsSb, wherein the dopant is Si or Te, and the n-type concentration range is as follows: 1E +15-5E +18/cm3；
D1 is more than 0 and less than or equal to 15nm, d2 is more than 0 and less than or equal to 15nm, and the composite material is used for a barrier layer of a medium-wave infrared detector.
A digital alloy is prepared by growing a layer of InAs material with thickness of d1, growing a layer of AlAs material with thickness of d2, growing a layer of InAs material with thickness of d3, growing an InAsSb material with thickness of d4, and repeating the unit by taking d1+ d2+ d3+ d4 as a basic unit, thereby obtaining DA-InAlAsSb material;
the thicknesses of single layers of d1, d2, d3 and d4 are more than 0 and less than or equal to 15nm, and the electrode is used for an absorption layer and an n-type electrode of a medium-wave infrared detector;
carrying out p-type light doping on DA-InAlAsSb with the doping concentration of 1E +15-5E +16/cm3Or carrying out p-type heavy doping on DA-InAlAsSb with the doping concentration of 5E +17-1E +19/cm3The P-type dopant is Be; or carrying out n-type light doping on DA-InAlAsSb with the doping concentration of 1E +15-5E +16/cm3Or carrying out n-type heavy doping on DA-InAlAsSb with the doping concentration of 5E +17-1E +19/cm3And the n-type dopant is Si or Te.
A digital alloy, grow a layer of InAs material with thickness d1 first, grow a layer of InAsSb material with thickness d2 second, regard d1+ d2 as a basic unit, repeat this unit, get DA-InAsSb;
the thicknesses of the d1 and d2 single layers are both more than 0 and less than or equal to 15nm, and the electrode is used for an absorption layer or an n-type electrode of a medium-wave infrared detector;
carrying out p-type light doping on DA-InAsSb with the doping concentration of 1E +15-5E +16/cm3Or carrying out p-type heavy doping on DA-InAsSb with the doping concentration of 5E +17-1E +19/cm3The p-type dopant is Be; or carrying out n-type light doping on DA-InAsSbThe doping concentration of the impurity is 1E +15-5E +16/cm3Or carrying out n-type heavy doping on DA-InAsSb with the doping concentration of 5E +17-1E +19/cm3And the n-type dopant is Si or Te.
A medium wave infrared detector device, the medium wave infrared detector device is an XBN type device or an NBN type device, and comprises a substrate layer, a buffer layer, a first electrode, an absorption layer, a barrier layer and a second electrode respectively, wherein the barrier layer adopts the digital alloy of any one of claims 1 to 3;
the device is an XBN type device, the first electrode is an n-type electrode/p-type electrode, the second electrode is a p-type electrode/n-type electrode, the n-type electrode adopts one of an n-type heavily doped blk-InAsSb layer, an n-type heavily doped DA-InAsSb layer and an n-type heavily doped DA-InAlAsSb layer, the absorbing layer is made of one of a blk-InAsSb layer, a DA-InAsSb layer and a DA-InAlAsSb layer, the p-type electrode layer is a p-type heavily doped material layer, and when the device is provided with an InAsSb body material, the Sb component of InAsSb is 0.09 +/-0.01; or the device is an NBN type device, and the first electrode and the second electrode are n type electrodes respectively;
the material bodies of the n-type electrode and the absorption layer are consistent, and the material of the p-type electrode layer is matched with that of the absorption layer;
the thickness of the n-type electrode is 50-1000nm, the thickness of the absorption layer is 500-10000nm, the thickness of the barrier layer is 50-300nm, the thickness of the p-type electrode is 50-1000nm, the p-type electrode layer is one of Be, Blk-InAsSb, Be, DA-InAlAsSb and Be, DA-InAsSb, and when the p-type electrode adopts one of Be, Blk-InAsSb, Be, DA-InAlAsSb and Be, DA-InAsSb, the material of the p-type electrode layer is consistent with that of the absorption layer; when the device is provided with the InAsSb material, the Sb component of the InAsSb is 0.09 +/-0.01;
the thickness of the absorption layer is 500-5000 nm;
the n-type electrode is an n-type heavily doped blk-InAsSb layer with the thickness of 50-1000nm, and the concentration of the n-type dopant is 5E +17-1E +19/cm3，
The absorption layer is non-doped or lightly doped blk-InAsSb with the thickness of 500-10000nm,
the barrier layer is made of digital alloy, a layer of AlSb material with the thickness of 3.6nm is grown, and a layer of AlAs with the thickness of 6.1nm is grown0.13Sb0.87Forming a basic unit with the thickness of 9.7nm, taking the basic unit as a period, repeatedly growing n periods to obtain the DA-AlAsSb barrier layer with the thickness of 50-300nm,
the p-type electrode is a p-type heavily doped material with the thickness of 500-1000nm and the concentration of the p-type dopant is 5E +17-1E +19/cm3The p-type electrode layer is one of Be, GaSb and Be, blk-InAsSb,
the Sb component of blk-InAsSb is 0.09 +/-0.01;
the n-type electrode is an n-type heavily doped DA-InAsSb layer with the thickness of 50-1000nm, and the concentration of the n-type dopant is 5E +17-1E +19/cm3，
The absorption layer is non-doped DA-InAsSb with the thickness of 500-10000nm,
the barrier layer adopts the following digital alloy: growing a layer of p-type AlSb material with the thickness of 6nm, and then growing a layer of p-type AlAs with the thickness of 5nm0.18Sb0.82Forming a basic unit with the thickness of 11nm, taking the basic unit as a period, repeatedly growing n periods to obtain DA-AlAsSb, wherein the thickness of the barrier layer is 50-300nm,
the p-type electrode is a p-type heavily doped material with the thickness of 50-1000nm, and the concentration of the p-type dopant is 5E +17-1E +19/cm3；
The DA-InAsSb elementary units in the absorption layer and the n-type electrode are composed of: 1.5nm InAs0.66Sb0.34Repeating the basic unit for n times to obtain the DA-InAsSb material with the required thickness;
the barrier layer is doped p-type with the p-type doping concentration of 1E +16/cm3(ii) a The p-type electrode layer is one of Be, GaSb and DA-InAsSb; the p-type dopant is Be; the n-type dopant is Si or Te;
the n-type electrode is an n-type heavily doped DA-InAlAsSb layer, and the concentration of the n-type dopant is 5E +17-1E +19/cm3The thickness of the film is 50-1000nm,
the absorption layer is 500-10000nm thick, undoped or p-type light doped DA-InAlAsSb,
the barrier layer is grown with AlSb material with a thickness of 0.4nm, and then with AlAs with a thickness of 0.7nm0.15Sb0.85A material forming a basic unit with a thickness of 1.1nm as a circleRepeatedly growing for n periods to obtain the DA-AlAsSb digital alloy material, wherein the thickness of the barrier layer is 50-300nm,
the p-type electrode is a p-type heavily doped material with a p-type dopant concentration of 5E +17-1E +19/cm3The thickness is 500-1000 nm;
in the absorption layer and the n-type electrode layer, the DA-InAlAsSb basic unit comprises: 1nm InAs/0.14nm AlAs/1nm InAs/4.14nm InAs0.83Sb0.17Repeating the basic unit n times to obtain DA-In with required thickness0.97Al0.03As0.89Sb0.11；
The p-type dopant is Be; the n-type dopant is Si or Te;
the p-type electrode layer is one of Be, GaSb and Be, DA-InAlAsSb;
the p-type dopant is Be and the n-type dopant is Si or Te.
According to the DA-AlAsSb metal alloy material, AlAsSb with the thickness of d1 and the thickness of d2 is used as a basic unit, n periods are repeated, the valence band energy level of AlSb is higher than that of AlAsSb, and the valence band microstrip of the material of the barrier layer can be integrally moved in the direction with high energy or low energy through different thickness proportion of d1 and d2, so that the position of the valence band is conveniently adjusted.
Furthermore, the thicknesses of d1 and d2 in the DA-AlAsSb material are respectively less than or equal to 15nm and more than 0, so that the valence band and AlAsSb valence band hole wave functions are overlapped as much as possible, and a valence band microstrip structure is formed.
When the DA-AlAsSb material is used as a detector barrier layer, the hole movement is smoother, and the quantum efficiency of the detector can be effectively improved. And has no effect on the dark current of the device.
Furthermore, the valence band energy level can be finely adjusted by doping and regulating DA-AlAsSb. Making it easier to adapt to different absorbing layers.
The DA-InAlAsSb material can increase the band gap of a blk-InAsSb material due to the introduction of Al, and when the material is used as an absorption layer of a detector, the cut-off wavelength can be shortened;
the DA-InAsSb can effectively expand cut-off wavelength when being used as an absorption layer of a detector.
The metal alloy AlAsSb material is obtained by adopting a digital alloy growth method, and is represented by DA-AlAsSb, and the material replaces blk-AlAsSb to be used as a barrier layer of a detector. By adopting the DA-AlAsSb as the barrier layer of the detector, the valence band offset between the absorption layer and the barrier layer can be 0 or close to 0 by the design, a proper material is provided for eliminating the obstruction of hole transmission, and the quantum efficiency is further improved. In the preparation process of the DA-AlAsSb digital alloy, firstly an AlSb material with the thickness of d1 is grown, then an AlAsxSb1-x material with the thickness of d2 is grown, the material with the thickness of d1+ d2 is used as a basic unit, and the unit is repeated, so that the DA-AlAsSb material is obtained. Therefore, the digital alloy material has sufficient adjustability, and the barrier layer can be suitable for different absorption layer materials with the wave band of 3-5 microns through components and doping.
In the infrared detector device, the valence band energy level of AlSb is higher than that of AlAsSb, the thickness proportion of the thickness d1 of AlSb and the thickness d2 of AlAsxSb1-x is carried out, and the single-layer As component x is adjusted, so that the whole valence band microstrip of a barrier layer material can move towards the direction with high energy, and the valence bands of the barrier layer and an absorption layer are leveled.
For a detector with a cut-off wavelength of 3-4 microns, digital alloy InAlAsSb (DA-InAlAsSb) is used as an absorption layer, and Al is introduced to increase the band gap of a blk-InAsSb material so as to shorten the cut-off wavelength. The digital alloy principle is as follows: firstly growing a layer of InAs material with the thickness of d1, then growing a layer of AlAs material with the thickness of d2, then growing a layer of InAs material with the thickness of d3, then growing an InAsSb material with the thickness of d4, and repeating the unit by taking the material with the thickness of d1+ d2+ d3+ d4 as a basic unit, thereby obtaining the DA-InAlAsSb material. DA-InAlAsSb is adopted As an absorption layer, and the valence bands of the DA-InAlAsSb barrier layer and the single-layer As component x can be kept equal by changing the thickness component of the DA-AlAsSb barrier layer and the single-layer As component x.
For a detector with a cut-off wavelength of 4-5 microns, digital alloy InAsSb (DA-InAsSb) is used as an absorption layer, and blk-InAsSb is replaced by the DA-InAsSb, so that the cut-off wavelength can be effectively expanded. The digital alloy principle is as follows: firstly growing a layer of InAs material with the thickness of d1, then growing a layer of InAsSb material with the thickness of d2, taking d1+ d2 as a basic unit, and repeating the unit to obtain the DA-InAlAsSb material. DA-InAsSb is adopted As an absorption layer, and the valence bands of the DA-InAsSb barrier layer and the single-layer As component x can be kept equal by changing the thickness component of the DA-AlAsSb barrier layer and the single-layer As component x.
By adopting the device structure, the detector can reach the working temperature of an international mainstream high-temperature detector, and the working temperature can reach more than 150 k.
Drawings
Fig. 1 is a prior art energy band structure diagram of a medium wave infrared detector device using AlAsSb bulk material (blk-AlAsSb) as a detector barrier layer and InAsSb bulk material (blk-InAsSb) as an absorption layer, in which cavities move from right to left.
FIG. 2 is a band diagram of a device band diagram of a medium wave infrared detector of the present invention using AlAsSb as a barrier layer, in which holes move from right to left, and the corresponding cut-off wavelength of the absorption layer is 4.1 μm at an operating temperature of 150 k.
Fig. 3 is a diagram of the band and the wave function of the XBN device with a digital alloy AlAsSb of the present invention as a barrier layer, blk-InAsSb as an absorber layer, and a DA-AlAsSb layer without doping, which is obtained by theoretical calculation, wherein the valence band offset between the absorber layer and the barrier layer is 0, and the corresponding cut-off wavelength of the absorber layer at an operating temperature of 150k is 4.1 μm.
Detailed Description
The invention is further described below with reference to specific examples:
the invention provides a first digital alloy material DA-AlAsSb, which is particularly suitable for serving as a barrier layer of a detector.
The digital alloy principle is that a layer of AlSb material with the thickness of d1 grows, a layer of AlAsxSb1-x material with the thickness of d2 grows again, a basic unit with the material thickness of d1+ d2 is formed, the d1+ d2 basic unit is taken As a period, the growth is repeated for n periods, the digital alloy AlAsySb1-y is formed, the overall average As component in the digital alloy is represented by y, the relationship between the overall average As component y in the digital alloy and the As component x in one layer of the basic unit is represented by the following formula,
wherein,
Figure GDA0003560846980000071
therefore, the DA-AlAsSb and GaSb substrates are in lattice matching, so that no stress exists between the DA-AlAsSb and GaSb substrates, and the molecular beam epitaxial growth is well realized. This material was named DA-AlAsSb. Preferably 0 < d1 < 15nm, 0 < d2 < 15 nm. So as to realize the superposition of the hole wave functions of the valence bands of AlSb and AlAsSb as much as possible, thereby forming a valence band microstrip structure.
And the DA-AlAsSb can be doped and regulated to obtain the doped DA-AlAsSb. The doped digital alloy has the following principle: growing a layer of AlSb material with the thickness of d1, and then growing a layer of AlAsxSb1-x material with the thickness of d2 to form a basic unit with the material thickness of d1+ d2, wherein:
Figure GDA0003560846980000072
and doping the basic unit of d1+ d2, taking d1+ d2 as a period, and repeatedly growing for n periods to obtain the doped DA-AlAsSb.
P-type doping can Be carried out, the dopant is Be, the concentration range of p-type doping is as follows: 1E +15-5E +18/cm3N-type doping can also be carried out, the dopant is Si or Te, and the concentration range of the n-type doping is as follows: 1E +15-5E +18/cm3。
The AlAsySb digital alloy material barrier layer with accurately controlled components can be obtained. The introduction of n-type doping can simultaneously reduce the valence band and conduction band energy level of DA-AlAsSb. The introduction of p-type doping can simultaneously improve the valence band and conduction band energy level of DA-AlAsSb.
The invention provides another digital alloy material DA-InAlAsSb which is particularly suitable for being used as an absorption layer or an n-type electrode of a device.
The digital alloy principle is as follows: firstly growing a layer of InAs material with the thickness of d1, then growing a layer of AlAs material with the thickness of d2, then growing a layer of InAs material with the thickness of d3, then growing an InAsSb material with the thickness of d4, and repeating the unit by taking d1+ d2+ d3+ d4 as a basic unit, thereby obtaining the material which is named as DA-InAlAsSb material.
And the DA-InAlAsSb can be doped and regulated to obtain the doped DA-InAlAsSb. Doping the basic unit of d1+ d2+ d3+ d4, taking d1+ d2+ d3+ d4 as a period, and repeatedly growing for n periods to obtain the doped DA-InAlAsSb.
P-type doping can Be carried out, the dopant is Be, the concentration range of p-type is as follows: 1E +15-5E +16/cm3N-type doping can also be carried out, the dopant is Si or Te, and the concentration range of the n-type doping is as follows: 1E +15-5E +16/cm3。
The valence band energy level of DA-InAlAsSb is lower than that of blk-InAsSb, the introduction of n-type doping can simultaneously reduce the valence band and conduction band energy level of DA-AlAsSb, and when the DA-InAlAsSb is used as an absorption layer of an infrared detector device, the valence band of DA-AlAsSb is more easily leveled by adjusting the DA-AlAsSb component used as a barrier layer.
Preferably, the DA-InAlAsSb absorption layer is lightly doped in a P type, and the doping concentration range is as follows: 1E +15-5E +16/cm3. When the absorption layer is used as an absorption layer of a detector, minority carriers in the absorption layer are electrons, and the absorption layer has longer diffusion length and service life compared with holes, so that the response speed and quantum efficiency of the detector to infrared signals are improved.
The invention also provides a third class of digital alloy material which is named as DA-InAsSb according to the composition. The material is also particularly suitable as an absorption layer of a device.
The digital alloy principle is as follows: firstly, growing a layer of InAs material with the thickness of d1, then growing a layer of InAsSb material with the thickness of d2, taking d1+ d2 as a basic unit, and repeating the unit to obtain the material, wherein the material is named as DA-InAsSb material.
And the DA-InAsSb can be doped and regulated to obtain the doped DA-InAsSb.
And doping the basic unit of d1+ d2, taking d1+ d2 as a period, and repeatedly growing n periods to obtain the doped DA-InAsSb.
Carrying out p-type doping on DA-InAsSb with the doping concentration of 1E +15-5E +16/cm3The p-type dopant is Be; p-type light doping benefits: when DA-InAsSb is used as the absorption layer of the detector, minority carriers in the absorption layer are electrons, and the absorption layer has longer diffusion length and service life relative to holes, so that the response speed and quantum efficiency of the detector to infrared signals are improved.
Or the DA-InAsSb is doped in an n type with the doping concentration of 1E +15-5E +16/cm3And the n-type dopant is Si or Te.
The invention provides a medium wave infrared detector which is an XBN and NBN device.
The invention relates to a medium wave infrared detection XBN device, which comprises a GaSb substrate, a GaSb buffer layer, an n-type electrode, an absorption layer, a barrier layer and a p-type electrode, or has an inverted structure with the structure: the device comprises a GaSb substrate, a GaSb buffer layer, a p-type electrode, a barrier layer, an absorption layer and an n-type electrode.
The medium wave infrared detection NBN device comprises a GaSb substrate, a GaSb buffer layer, an n-type electrode, an absorption layer, a barrier layer and an n-type electrode.
For convenience of description, the two electrodes in the device are referred to as electrode one and electrode two, respectively.
In the device, the barrier layer adopts a DA-AlAsSb layer.
In a preferable scheme, DA-InAlAsSb is used as an absorption layer, and the valence bands of the barrier layer and the barrier layer can be kept equal by changing the thickness component of the barrier layer. For a detector with a cut-off wavelength of 3-4 microns, digital alloy InAlAsSb (DA-InAlAsSb) is used as an absorption layer, and the introduction of Al can increase the band gap of a blk-InAsSb material, so that the cut-off wavelength can be shortened.
In another preferred scheme, DA-InAsSb is used as the absorption layer, and the valence bands of the barrier layer and the absorption layer can be leveled by changing the thickness component of the barrier layer of the DA-AlAsSb. For a detector with a cut-off wavelength of 4-5 microns, digital alloy InAsSb (DA-InAsSb) is used as an absorption layer, and the DA-InAsSb is used for replacing blk-InAsSb, so that the cut-off wavelength can be effectively expanded, and can be expanded to a 4-5 micron band.
Preferably, lightly doped p-type DA-InAsSb is used as the absorber layer.
The doping agent is Be, and the doping concentration is 1E +15-5E +16/cm3。
In another preferred embodiment, n-type doping regulation is performed on the barrier layer, DA-InAlAsSb is adopted as the absorption layer, the DA-InAlAsSb valence band energy level is lower than that of blk-InAsSb, n-type doping of the barrier layer is introduced, the DA-AlAsSb valence band energy level and the conduction band energy level can be simultaneously reduced, the n-type doped barrier layer and the absorption layer valence band are closer, and the valence bands of the DA-AlAsSb valence band and the conduction band energy level can be more easily flattened by adjusting the thicknesses of the AlAsxSb1-x layer and the AlSb layer in the DA-AlAsSb.
In another preferred scheme, P-type doping regulation and control are carried out on the barrier layer, DA-InAsSb is adopted as the absorption layer, and due to the fact that the valence band energy level of the DA-InAsSb is higher than that of blk-InAsSb, the P-type doping introduction can simultaneously improve the valence band and the conduction band energy level of DA-AlAsSb, so that the barrier layer and the valence band of the absorption layer can be more easily leveled by regulating the DA-AlAsSb component, the electron transmission barrier can be improved, and the dark current of the device can be reduced.
In another preferred embodiment, the n-type electrode is made of the same material as the absorption layer, and the n-type electrode is heavily doped, for example, when the absorption layer is DA-inaiassb, the heavily doped DA-inaiassb is used as the n-type electrode of the detector, and when the absorption layer is DA-InAsSb, the heavily doped DA-InAsSb is used as the n-type electrode of the detector. When the absorption layer adopts blk-InAsSb, heavily doped blk-InAsSb is adopted as an n-type electrode of the detector, the dopant is an n-type dopant, and the doping concentration is 5E +17-1E +19/cm3. The n-type electrode material is consistent with the material of the absorption layer, and the conduction band and the valence band energy level of the n-type electrode layer are lower than those of the absorption layer, so that the n-type electrode layer plays a role in passing electrons and blocking holes. Moreover, the two materials are consistent, and the preparation of the device is convenient.
In another preferred embodiment, it is preferable to perform p-type light doping when DA-InAlAsSb, blk-InAsSb or DA-InAsSb is used as the absorption layer. The p-type light doping of the three absorption layers with the detection wavelength of 3-5 microns has the advantages that minority carriers in the absorption layers are electrons, and the absorption layers have longer diffusion length and service life relative to holes, so that the response speed and the quantum efficiency of the detector to infrared signals are improved.
In each technical scheme of the invention, the N-type electrode is preferably selected to carry out N-type heavy doping regulation and control, and the p-type electrode is preferably selected to carry out p-type heavy doping regulation and control.
In each embodiment of the invention, the p-type electrode layer is preferably Be doped GaSb, Be doped blk-InAsSb or is called blk-InAsSb doped Be, Be doped DA-InAlAsSb or Be doped DA-InAsSb, when the device contains blk-InAsSb and/or DA-InAsSb, the average Sb component is 0.09 +/-0.01 no matter which layer of the device the two alloys are used as, the Sb can Be lattice matched with GaSb only under the Sb component, and the average Sb component of blk and DA InAsSb in the device is 0.09 according to all parameter settings.
The detector of the scheme of the invention has the following advantages:
the DA-AlAsSb is used as the barrier layer, the valence band energy level of AlSb is higher than that of AlAsSb, and the valence band microstrip of the material of the barrier layer can be integrally moved towards the direction with high energy through the different thickness proportion of d1 and d2, so that the valence bands of the barrier layer and the absorption layer of the device are kept level, holes can be moved more smoothly, the quantum efficiency of the detector can be effectively improved, and the dark current of the device is not influenced.
The As component of AlAsSb in the DA-AlAsSb is much larger than that of As component 0.08 in blk-AlAsSb, the As component can be regulated and controlled according to the relative thickness of AlSb/AlAsSb in the DA-AlAsSb, and when the DA-AlAsSb material is grown by adopting MBE, the As component is more easily and accurately controlled and the mass production is more easily realized.
By changing the values of the thickness d1 of AlSb and the thickness d2 of AlAsxSb1-x in the barrier layer DA-AlAsySb1-y and the value of x, the position of the valence band edge of DA-AlAsySb1-y can be continuously adjusted, so that the valence bands of the absorption layer and the barrier layer are leveled. The adjustment of the three parameters provides more flexibility in device design.
According to the device, the position of the DA-AlAsySb1-y valence band edge can be continuously adjusted by changing the thickness d1 of AlSb, the thickness d2 of AlAsxSb1-x and the value of x in the barrier layer DA-AlAsySb1-y, so that the valence bands of the absorption layer and the barrier layer are leveled. The adjustment of the three parameters provides more flexibility in device design.
In the invention, in the P electrode layers of the embodiments, the doping material of Be may Be doped with GaSb, and may also Be doped with a material consistent with the absorption layer. For example, when the absorption layer is blk-InAsSb, the P electrode layer may Be Be: blk-InAsSb, when the absorption layer is DA-InAlAsSb, the P electrode layer may Be Be: DA-InAlAsSb, and when the absorption layer is DA-InAsSb, the P electrode layer may Be Be: DA-InAsSb.
Example 1:
the preparation method of the infrared device comprises the following steps: the method comprises the following steps:
1. loading the GaSb substrate into a growth chamber of an MBE system;
2. heating the substrate to 500-700 ℃ under the condition that the vacuum of the growth chamber is better than 1E-6torr so as to remove the residual oxide layer on the surface of the substrate;
3. reducing the deoxidation temperature by 10-200 ℃, and growing a GaSb buffer layer with the thickness of 100-1000 nm;
4. growing a heavily doped blk-InAsSb layer with the thickness of 50-1000nm on the basis of the buffer layer to serve as an n-type electrode of the detector;
5. growing a layer of undoped blk-InAsSb with the thickness of 500-10000nm as an absorption layer of the detector;
6. growing a layer of AlSb material with the thickness of d1, and then growing a layer of AlAsxSb1-x material with the thickness of d2 to form a basic unit with the thickness of d1+ d2, thereby obtaining DA-AlAsySb 1-y. The average As component in the digital alloy is represented by y. The relationship between the overall average As component y in the digital alloy and the As component x in one layer of the basic unit is represented by the following formula,
Figure GDA0003560846980000121
the formula is satisfied in order to match the lattice of DA-AlAsSb with the GaSb substrate so that there is no stress between them. By adjusting the thickness of d1 and d2, different valence band steps can be obtained. D1 is more than 0 and less than or equal to 15nm, and d2 is more than 0 and less than or equal to 15 nm.
7. And taking d1+ d2 as a period, and repeatedly growing n periods to obtain the AlAsySb digital alloy material barrier layer with accurately controlled components.
8. On the basis of the barrier layer, a layer of p-type heavily doped material with the thickness of 50-1000nm is grown to be used as a p-type electrode layer. The concentration of the p-type dopant is 5E +17-1E +19/cm3The p-type dopant may Be Be.
9. Preferably, the p-type electrode layer may Be Be doped GaSb, Be doped one of blk-InAsSb.
10. Wherein the Sb component of InAsSb is 0.09 +/-0.01
Example 2:
the preparation method of the infrared device comprises the following steps: the method comprises the following steps:
1. loading the GaSb substrate into a growth chamber of an MBE system;
2. heating the substrate to 500-700 ℃ under the condition that the vacuum of the growth chamber is better than 1E-6torr so as to remove the residual oxide layer on the surface of the substrate;
3. reducing the deoxidation temperature by 10-200 ℃, and growing a GaSb buffer layer with the thickness of 100-1000 nm;
4. growing a heavily doped blk-InAsSb layer with the thickness of 50-1000nm on the basis of the buffer layer to serve as an n-type electrode of the detector;
5. growing a layer of p-type lightly doped blk-InAsSb with the thickness of 500-10000nm as an absorption layer of the detector, wherein the dopant is Be, and the p-type concentration range is as follows: 1E +15-5E +16/cm 3;
6. and growing a layer of AlSb material with the thickness of d1, and then growing a layer of AlAsxSb1-x material with the thickness of d2 to form a basic unit with the thickness of d1+ d2, thereby obtaining DA-AlAsySb 1-y. The average As component in the digital alloy is represented by y. The relationship between the overall average As component y in the digital alloy and the As component x in one layer of the basic unit is represented by the following formula,
Figure GDA0003560846980000131
the formula is satisfied in order to match the lattice of DA-AlAsSb with the GaSb substrate so that there is no stress between them.
Carrying out p-type doping on DA-AlAsSb, wherein the dopant is Be, and the p-type concentration range is as follows: 1E +15-5E +18/cm3. Due to the introduction of p-type doping, the valence band and the conduction band energy level of DA-AlAsSb can be simultaneously improved, hole transport can be influenced, but the electron transport barrier can be improved, and the dark current of the device can be reduced. Wherein d1 is more than 0 and less than or equal to 15nm, and d2 is more than 0 and less than or equal to 15 nm.
7. And taking d1+ d2 as a period, and repeatedly growing n periods to obtain the AlAsySb digital alloy material barrier layer with accurately controlled components.
8. On the basis of the barrier layer, a layer of p-type heavily doped material with the thickness of 50-1000nm is grown to be used as a p-type electrode layer. p-type electricThe pole layer is one of Be, GaSb and Be, blk-InAsSb. The p-type dopant may Be Be and the concentration of the p-type dopant is 5E +17-1E +19/cm3。
Specifically, the Sb component of InAsSb is 0.09 +/-0.01
Example 3:
the preparation method of the infrared device comprises the following steps: the method comprises the following steps:
1. loading the GaSb substrate into a growth chamber of an MBE system;
2. heating the substrate to 500-700 ℃ under the condition that the vacuum of the growth chamber is better than 1E-6torr so as to remove the residual oxide layer on the surface of the substrate;
3. reducing the deoxidation temperature by 10-200 ℃, and growing a layer of p-type heavily doped material with the thickness of 50-1000nm as a p-type electrode layer;
4. growing a layer of AlSb material with the thickness of d1, and then growing a layer of AlAsxSb1-x material with the thickness of d2 to form basic units with the thickness of d1+ d2 to obtain AlAsySb1-y, wherein the average As component in the digital alloy is represented by y. The relationship between the overall average As component y in the digital alloy and the As component x in one layer of the basic unit is represented by the following formula,
Figure GDA0003560846980000141
the formula is satisfied in order to match the lattice of DA-AlAsSb with the GaSb substrate so that there is no stress between them. This layer acts as a barrier layer.
5. Growing an intrinsic blk-InAsSb layer with the thickness of 500-10000nm as an absorption layer of the detector;
6. growing a heavily doped blk-InAsSb layer with the thickness of 50-1000nm on the basis of the buffer layer to serve as an n-type electrode of the detector;
specifically, the p-type electrode layer can Be one of Be: GaSb and Be: blk-InAsSb. The concentration of the p-type dopant is 5E +17-1E +19/cm3The p-type dopant may Be Be.
Specifically, d1 is more than 0 and less than or equal to 15nm, and d2 is more than 0 and less than or equal to 15 nm.
Specifically, the Sb component of InAsSb is 0.09 +/-0.01.
Example 4:
the preparation method of the infrared device comprises the following steps: the method comprises the following steps:
1. loading the GaSb substrate into a growth chamber of an MBE system;
2. heating the substrate to 500-700 ℃ under the condition that the vacuum of the growth chamber is better than 1E-6torr so as to remove the residual oxide layer on the surface of the substrate;
3. reducing the deoxidation temperature by 10-200 ℃, and growing a GaSb buffer layer with the thickness of 100-1000 nm;
4. on the basis of the buffer layer, growing an n-type heavily doped DA-InAlAsSb layer with the thickness of 50-1000nm as an n-type electrode of the detector; concentration of n-type dopant 5E +17-1E +19/cm3。
5. Growing a layer of non-doped DA-InAlAsSb with the thickness of 500-10000nm as an absorption layer of the detector;
6. growing a layer of AlSb material with the thickness of d1, and then growing a layer of AlAsxSb1-x material with the thickness of d2 to form basic units with the thickness of d1+ d2 to obtain AlAsySb1-y, wherein the average As component in the digital alloy is represented by y. The relationship between the overall average As component y in the digital alloy and the As component x in one layer of the basic unit is represented by the following formula,
Figure GDA0003560846980000142
the formula is satisfied in order to match the lattice of DA-AlAsSb with the GaSb substrate so that there is no stress between them.
The barrier layer optimization method comprises the following steps: carrying out n-type doping on DA-AlAsSb, wherein the dopant is Si or Te, and the n-type concentration range is as follows: 1E +15-5E +18/cm3The valence band energy level of DA-InAlAsSb is lower than that of blk-InAsSb, and the introduction of n-type doping can simultaneously reduce the valence band and conduction band energy levels of DA-AlAsSb, so that the valence band can be more easily leveled by adjusting the DA-AlAsSb component.
7. Taking d1+ d2 as a cycle, and repeatedly growing for n cycles to obtain AlAsySb with accurately controlled components
A digital alloy material barrier layer.
On the basis of the barrier layer, a layer of p-type heavily doped material with the thickness of 50-1000nm is grown to be used as a p-type electrode layer. p typeThe concentration of the dopant is 5E +17-1E +19/cm3The p-type dopant may Be Be.
Specifically, the p-type electrode layer can Be Be: DA-InAlAsSb.
Specifically, d1 is more than 0 and less than or equal to 15nm, and d2 is more than 0 and less than or equal to 15 nm.
Example 5:
the preparation method of the infrared device comprises the following steps: the method comprises the following steps:
1. loading the GaSb substrate into a growth chamber of an MBE system;
2. heating the substrate to 500-700 ℃ under the condition that the vacuum of the growth chamber is better than 1E-6torr so as to remove the residual oxide layer on the surface of the substrate;
3. reducing the temperature by 10-200 ℃ on the basis of the deoxidation temperature, and growing a GaSb buffer layer with the thickness of 100-1000 nm;
4. growing a heavily doped DA-InAsSb layer with the thickness of 50-1000nm on the basis of the buffer layer to serve as an n-type electrode of the detector; concentration of n-type dopant 5E +17-1E +19/cm3；
5. Growing a layer of lightly doped p-type DA-InAsSb with the thickness of 500-10000nm as an absorption layer of the detector, wherein the doping concentration is 1E +15-5E +16/cm3；
Growing a layer of AlSb material with the thickness of d1, and then growing a layer of AlAsxSb1-x material with the thickness of d2 to form basic units with the thickness of d1+ d2 to obtain AlAsySb1-y, wherein the average As component in the digital alloy is represented by y. The relationship between the overall average As component y in the digital alloy and the As component x in one layer of the basic unit is represented by the following formula,
Figure GDA0003560846980000161
the formula is satisfied in order to match the lattice of DA-AlAsSb with the GaSb substrate so that there is no stress between them.
The barrier layer optimization method comprises the following steps: carrying out p-type doping on DA-AlAsSb, wherein a dopant is Be, and the p-type concentration range is as follows: 1E +15-5E +18/cm3Because the valence band energy level of DA-InAsSb is higher than that of blk-InAsSb, the introduction of p-type doping can simultaneously improve the valence band and conduction band energy levels of DA-AlAsSb, so that the DA-AlAsSb component can be adjusted more easilyThe valence band is flattened, the electron transmission potential barrier can be improved, and the dark current of the device is reduced.
6. And taking d1+ d2 as a period, and repeatedly growing n periods to obtain the AlAsySb digital alloy material barrier layer with accurately controlled components.
7. On the basis of the barrier layer, a layer of p-type heavily doped material with the thickness of 50-1000nm is grown to be used as a p-type electrode layer.
Specifically, the p-type electrode layer can Be Be: one of DA-InAsSb.
Specifically, d1 is more than 0 and less than or equal to 15nm, and d2 is more than 0 and less than or equal to 15 nm.
The valence band offset of the device can be 0 by adjusting the values of d1, d2 and x. The specific embodiment is as follows:
the examples of the valence band offset of the barrier layer and the absorption layer of 0 are given below, and it can be seen that the digital alloy material has sufficient adjustability, and the barrier layer can be applied to different absorption layer materials with the wavelength band of 3-5 microns through composition and doping. As shown in FIGS. 2 and 3, after DA-AlAsSb is adopted, the wave functions of the valence bands of InAsSb and AlAsSb are overlapped, no band offset occurs, and the hole transmission is proved to be smoother.
Example 11
1. Loading the GaSb substrate into a growth chamber of an MBE system;
2. heating the substrate to 500-700 ℃ under the condition that the vacuum of the growth chamber is better than 1E-6torr so as to remove the residual oxide layer on the surface of the substrate;
3. reducing the deoxidation temperature by 10-200 ℃, and growing a GaSb buffer layer with the thickness of 100-1000 nm;
4. on the basis of the buffer layer, an n-type heavily doped blk-InAsSb layer is grown, wherein the concentration of an n-type dopant is 5E +17-1E +19/cm3The thickness is 50-1000nm, and the N-type electrode is used as an n-type electrode of the detector; the n-type dopant is Si or Te.
5. A layer of undoped blk-InAsSb with the thickness of 500-10000nm is grown to be used as an absorption layer of the detector, and the cut-off wavelength of the absorption layer corresponding to the detector is 4.1 microns at the working temperature of 150 k.
6. Growing a layer with a thickness of 3.6nm of AlSb material, and growing a layer of AlAs with the thickness of 6.1nm0.13Sb0.87And forming a basic unit with the thickness of 9.7nm, taking the basic unit as a period, and repeatedly growing the basic unit for n periods to obtain the DA-AlAsSb digital alloy material barrier layer with accurately controlled components, wherein the DA-AlAsSb of the components can ensure that the valence band offset of the barrier layer and the blk-InAsSb absorption layer is 0 eV.
7. On the basis of the barrier layer, a layer of p-type heavily doped material is grown, and the concentration of the p-type dopant is 5E +17-1E +19/cm3The thickness is 500-1000nm, and the p-type electrode layer is used as a detector. The p-type dopant may Be. The p-type electrode layer can Be one of Be: GaSb and Be: blk-InAsSb.
Example 12
1. Loading the GaSb substrate into a growth chamber of an MBE system;
2. heating the substrate to 500-700 ℃ under the condition that the vacuum of the growth chamber is better than 1E-6torr so as to remove the residual oxide layer on the surface of the substrate;
3. reducing the deoxidation temperature by 10-200 ℃, and growing a GaSb buffer layer with the thickness of 100-1000 nm;
4. on the basis of the buffer layer, an n-type heavily doped DA-InAsSb layer is grown, wherein the concentration of an n-type dopant is 5E +17-1E +19/cm3The thickness is 50-1000nm, and the N-type electrode is used as an n-type electrode of the detector;
5. and growing a layer of non-doped DA-InAsSb with the thickness of 500-10000nm as an absorption layer of the detector, wherein the cut-off wavelength of the absorption layer corresponding to the detector is 5 microns at the working temperature of 150 k.
6. Growing a layer of p-type AlSb material with the thickness of 6nm, and then growing a layer of p-type AlAs with the thickness of 5nm0.18Sb0.82The material is used for forming a basic unit with the thickness of 11nm, the basic unit is used as a period, and n periods are repeatedly grown to obtain the DA-AlAsSb digital alloy material barrier layer with accurately controlled components, wherein the DA-AlAsSb of the component can ensure that the valence band offset of the barrier layer and the DA-InAsSb absorption layer is 0 eV.
7. On the basis of the barrier layer, a layer of p-type heavily doped material is grown, and the concentration of the p-type dopant is 5E +17-1E +19/cm3A thickness of 500-1000nmIs the p-type electrode layer of the detector.
The DA-InAsSb basic unit in the step 4-5 comprises the following components: InAs with thickness of 1.5nm0.66Sb0.34And repeating the basic unit n times to obtain the DA-InAsSb material with the required thickness by InAs with the thickness of 4.5 nm.
Specifically, the p-type dopant is Be, and the n-type dopant is Si or Te.
Specifically, the p-type doping concentration in the DA-AlAsSb is 1E +16/cm3。
Specifically, the p-type electrode layer can Be Be GaSb, and Be DA-InAsSb.
Example 13:
1. loading the GaSb substrate into a growth chamber of an MBE system;
2. heating the substrate to 500-700 ℃ under the condition that the vacuum of the growth chamber is better than 1E-6torr so as to remove the residual oxide layer on the surface of the substrate;
3. reducing the deoxidation temperature by 10-200 ℃, and growing a GaSb buffer layer with the thickness of 100-1000 nm;
4. on the basis of the buffer layer, an n-type heavily doped DA-InAlAsSb layer is grown, and the concentration of an n-type dopant is 5E +17-1E +19/cm3The thickness is 50-1000nm, and the N-type electrode is used as an n-type electrode of the detector;
5. and growing a layer of non-doped DA-InAlAsSb with the thickness of 500-10000nm as an absorption layer of the detector, wherein the cut-off wavelength of the absorption layer corresponding to the detector is 3.1 microns at the working temperature of 150 k.
6. Growing a layer of AlSb material with the thickness of 0.4nm, and then growing a layer of AlAs with the thickness of 0.7nm0.15Sb0.85Forming a basic unit with the thickness of 1.1nm, taking the basic unit as a period, and repeatedly growing n periods to obtain the DA-In with accurately controlled components0.97Al0.03As0.89Sb0.11The DA-AlAsSb of the digital alloy material barrier layer can ensure that the valence band offset of the barrier layer and the DA-InAlAsSb absorption layer is 0 eV.
7. On the basis of the barrier layer, a layer of p-type heavily doped material is grown, and the concentration of the p-type dopant is 5E +17-1E +19/cm3Thickness 500-And a pattern electrode layer.
Specifically, the composition of the DA-InAlAsSb basic unit in the step 4-5 is as follows: InAs with the thickness of 1nm, AlAs with the thickness of 0.14nm, InAs with the thickness of 1nm, InAs with the thickness of 4.14nm0.83Sb0.17And repeating the basic unit n times to obtain the DA-InAsSb material with the required thickness.
Specifically, the p-type dopant is Be and the n-type dopant is Si or Te.
Specifically, the p-type electrode layer can Be one of Be: GaSb and Be: DA-InAlAsSb.
Example 14:
the invention realizes the purpose through the following technical scheme: the method comprises the following steps:
1. loading the GaSb substrate into a growth chamber of an MBE system;
2. heating the substrate to 500-700 ℃ under the condition that the vacuum of the growth chamber is better than 1E-6torr so as to remove the residual oxide layer on the surface of the substrate;
3. reducing the deoxidation temperature by 10-200 ℃, and growing a GaSb buffer layer with the thickness of 100-1000 nm;
4. on the basis of the buffer layer, a layer of p-type heavily doped material is grown, and the concentration of a p-type dopant is 5E +17-1E +19/cm3The thickness is 500-1000nm, and the p-type electrode layer is used as a detector.
5. Growing a layer of AlSb material with the thickness of 3.6nm, and then growing a layer of AlAs with the thickness of 6.1nm0.13Sb0.87And forming a basic unit with the thickness of 9.7nm, taking the basic unit as a period, and repeatedly growing the basic unit for n periods to obtain the DA-AlAsSb digital alloy material barrier layer with accurately controlled components, wherein the DA-AlAsSb of the components can ensure that the valence band offset of the barrier layer and the blk-InAsSb absorption layer is 0 eV.
6. And growing a layer of undoped blk-InAsSb with the thickness of 500-10000nm as an absorption layer of the detector, wherein the cut-off wavelength of the absorption layer corresponding to the detector is 4.1 microns at the working temperature of 150 k. P-type light doping may also be employed.
7. Growing an n-type heavily doped blk-InAsSb layer with the n-type dopant concentration of 5E +17-1E +19/cm3The thickness is 50-1000nm, and the N-type electrode is used as an n-type electrode of the detector;
specifically, the p-type dopant is Be, and the n-type dopant is Si or Te.
Specifically, the p-type electrode layer can Be one of Be: GaSb and Be: blk-InAsSb.
Specifically, the Sb composition of blk-InAsSb is 0.09 ± 0.01.
In various embodiments and examples of the present invention, the p-type dopant may Be Be and the n-type dopant may Be Si or Te.
Example 15 NBN device
The invention realizes the purpose through the following technical scheme: the method comprises the following steps:
1. loading the GaSb substrate into a growth chamber of an MBE system;
2. heating the substrate to 500-700 ℃ under the condition that the vacuum of the growth chamber is better than 1E-6torr so as to remove the residual oxide layer on the surface of the substrate;
3. reducing the deoxidation temperature by 10-200 ℃, and growing a GaSb buffer layer with the thickness of 100-1000 nm;
4. on the basis of the buffer layer, an n-type heavily doped blk-InAsSb layer is grown, the concentration of an n-type dopant is 5E +17-1E +19/cm3, the thickness is 50-1000nm, and the n-type heavily doped blk-InAsSb layer is used as an n-type electrode of a detector;
5. a layer of undoped blk-InAsSb with the thickness of 500-10000nm is grown to be used as an absorption layer of the detector, and the cut-off wavelength of the absorption layer corresponding to the detector is 4.1 microns at the working temperature of 150 k.
6. Growing a layer of AlSb material with the thickness of 3.6nm, and then growing a layer of AlAs with the thickness of 6.1nm0.13Sb0.87And forming a basic unit with the thickness of 9.7nm, taking the basic unit as a period, and repeatedly growing the basic unit for n periods to obtain the DA-AlAsSb digital alloy material barrier layer with accurately controlled components, wherein the DA-AlAsSb of the components can ensure that the valence band offset of the barrier layer and the blk-InAsSb absorption layer is 0 eV.
7. On the basis of the barrier layer, an n-type heavily doped blk-InAsSb layer is grown, the concentration of an n-type dopant is 5E +17-1E +19/cm3, the thickness is 50-1000nm, and the n-type heavily doped blk-InAsSb layer is used as an n-type electrode of a detector.
Specifically, the n-type dopant is Si or Te.
Specifically, the Sb component of blk-InAsSb is 0.09 +/-0.01
In the above embodiment, the thickness of the absorption layer is preferably 500-5000 nm.

Claims (15)

1. A digital alloy is characterized in that a layer of AlAs with the thickness of d2 is grown on a layer of AlSb material with the thickness of d1xSb1-xMaterial forming AlAs with a thickness of d1+ d2ySb1-yThe basic unit, d1+ d2, is used as a period, and the growth is repeated for n periods to form the digital alloy DA-AlAsySb1-yWherein y is the overall average As composition in the digital alloy and x is the composition of As in one layer of the base unit; the relationship between the overall average As component y in the digital alloy and the As component x in one layer of the basic unit is As follows:
Figure FDA0003560846970000011
d1 is more than 0 and less than or equal to 15nm, d2 is more than 0 and less than or equal to 15nm, and the composite material is used for a barrier layer of a medium-wave infrared detector.
2. The digital alloy of claim 1, wherein DA-AlAsSb is p-doped, the dopant is Be, the p-type concentration range: 1E +15-5E +18/cm3。
3. The digital alloy according to claim 1, wherein DA-AlAsSb is n-doped, the dopant is Si or Te, the n-type concentration range is: 1E +15-5E +18/cm3。
4. A medium wave infrared detector device, which is an XBN type device or an NBN type device and comprises a substrate layer, a buffer layer, a first electrode, an absorption layer, a barrier layer and a second electrode respectively, wherein the barrier layer is made of the digital alloy of any one of claims 1 to 3.
5. The device of claim 4, wherein the device is an XBN type device, the first electrode is an n-type electrode/p-type electrode, the second electrode is a p-type electrode/n-type electrode, the n-type electrode is one of a heavily doped blk-InAsSb layer, a heavily doped n-InAsSb layer and a heavily doped n-InAlAsSb layer, the absorbing layer is made of one of a blk-InAsSb layer, a DA-InAsSb layer and a DA-InAlAsSb layer, the p-type electrode layer is a heavily doped p-type material layer, and when the device has an InAsSb bulk material, the Sb composition of the InAsSb is 0.09 +/-0.01; or the device is an NBN type device, and the first electrode and the second electrode are n type electrodes respectively.
6. A device as claimed in claim 5, wherein the n-type electrode is of a material compatible with the material of the absorbing layer and the p-type electrode layer is of a material compatible with the material of the absorbing layer.
7. The device as claimed in any one of claims 4-6, wherein the thickness of the n-type electrode is 50-1000nm, the thickness of the absorption layer is 500-10000nm, the thickness of the barrier layer is 50-300nm, the thickness of the p-type electrode is 50-1000nm, the p-type electrode layer is Be GaSb or Be blk-InAsSb, Be DA-InAlAsSb, Be DA-InAsSb, and when the p-type electrode is Be blk-InAsSb, Be DA-InAlAsSb, Be DA-InAsSb, the P-type electrode layer is the same as the absorption layer material; when the device is provided with the InAsSb bulk material, the Sb component of the InAsSb is 0.09 +/-0.01.
8. The device as claimed in claim 7, wherein the absorption layer has a thickness of 500-5000 nm.
9. The medium wave infrared detector device as set forth in claim 4,
the n-type electrode is an n-type heavily doped blk-InAsSb layer with the thickness of 50-1000nm, and the concentration of the n-type dopant is 5E +17-1E +19/cm3，
The absorption layer is non-doped or lightly doped blk-InAsSb with the thickness of 500-10000nm,
the barrier layer is made of the following digital alloyAlSb material with the thickness of 3.6nm, and then growing a layer of AlAs with the thickness of 6.1nm0.13Sb0.87Forming a basic unit with the thickness of 9.7nm, taking the basic unit as a period, repeatedly growing n periods to obtain the DA-AlAsSb barrier layer with the thickness of 50-300nm,
the p-type electrode is a p-type heavily doped material with the thickness of 500-1000nm and the concentration of the p-type dopant is 5E +17-1E +19/cm3The p-type electrode layer is one of Be, GaSb and Be, blk-InAsSb,
the Sb composition of blk-InAsSb was 0.09. + -. 0.01.
10. The medium wave infrared detector device as set forth in claim 4,
the n-type electrode is an n-type heavily doped DA-InAsSb layer with the thickness of 50-1000nm, and the concentration of the n-type dopant is 5E +17-1E +19/cm3，
The absorption layer is non-doped DA-InAsSb with the thickness of 500-10000nm,
the barrier layer adopts the following digital alloy: growing a layer of p-type AlSb material with the thickness of 6nm, and then growing a layer of p-type AlAs with the thickness of 5nm0.18Sb0.82Forming a basic unit with the thickness of 11nm, taking the basic unit as a period, repeatedly growing n periods to obtain DA-AlAsSb, wherein the thickness of the barrier layer is 50-300nm,
the p-type electrode is a p-type heavily doped material with the thickness of 50-1000nm, and the concentration of the p-type dopant is 5E +17-1E +19/cm3。
11. The medium wave infrared detector device as set forth in claim 10,
the DA-InAsSb elementary units in the absorption layer and the n-type electrode are composed of: 1.5nm InAs0.66Sb0.34And 4.5nm of InAs, repeating the basic unit n times to obtain the DA-InAsSb material with the required thickness.
12. The medium wave infrared detector device as set forth in claim 10,
the barrier layer is doped p-type with the p-type doping concentration of 1E +16/cm3(ii) a The p-type electrode layer is one of Be, GaSb and DA-InAsSb; the p-type dopant is Be; the n-type dopant is Si or Te.
13. The medium wave infrared detector device as set forth in claim 4,
the n-type electrode is an n-type heavily doped DA-InAlAsSb layer, and the concentration of the n-type dopant is 5E +17-1E +19/cm3The thickness of the film is 50-1000nm,
the absorption layer is 500-10000nm thick, undoped or p-type light doped DA-InAlAsSb,
the barrier layer is grown with AlSb material with a thickness of 0.4nm, and then with AlAs with a thickness of 0.7nm0.15Sb0.85Forming a basic unit with the thickness of 1.1nm, taking the basic unit as a period, repeatedly growing n periods to obtain the DA-AlAsSb digital alloy material, wherein the thickness of the barrier layer is 50-300nm,
the p-type electrode is a p-type heavily doped material with a p-type dopant concentration of 5E +17-1E +19/cm3The thickness is 500-1000 nm.
14. The device of claim 12, wherein in the absorption layer and the n-type electrode layer, the DA-inaiassb elementary cell consists of: 1nm InAs/0.14nm AlAs/1nm InAs/4.14nm InAs0.83Sb0.17Repeating the basic unit n times to obtain DA-In with required thickness0.97Al0.03As0.89Sb0.11；
The p-type dopant is Be; the n-type dopant is Si or Te;
the p-type electrode layer is one of Be, GaSb and Be, DA-InAlAsSb.
15. A mid-wave infrared detector device as claimed in any one of claims 10 to 14, characterized in that the p-type dopant is Be and the n-type dopant is Si or Te.
CN202011597283.4A 2020-12-29 2020-12-29 Digital alloy and digital alloy medium wave infrared detector Active CN112713209B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011597283.4A CN112713209B (en) 2020-12-29 2020-12-29 Digital alloy and digital alloy medium wave infrared detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011597283.4A CN112713209B (en) 2020-12-29 2020-12-29 Digital alloy and digital alloy medium wave infrared detector

Publications (2)

Publication Number Publication Date
CN112713209A CN112713209A (en) 2021-04-27
CN112713209B true CN112713209B (en) 2022-05-10

Family

ID=75546429

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011597283.4A Active CN112713209B (en) 2020-12-29 2020-12-29 Digital alloy and digital alloy medium wave infrared detector

Country Status (1)

Country Link
CN (1) CN112713209B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5594750A (en) * 1995-06-06 1997-01-14 Hughes Aircraft Company Selectively Si-doped InAs/A1AsSb short-period-superlattices as N-type cladding layers for mid-IR laser structures grown on InAs substrates

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8450773B1 (en) * 2010-07-15 2013-05-28 Sandia Corporation Strain-compensated infrared photodetector and photodetector array
US8217480B2 (en) * 2010-10-22 2012-07-10 California Institute Of Technology Barrier infrared detector
EP2802018A3 (en) * 2013-05-07 2015-04-29 L-3 Communications Cincinnati Electronics Corporation Diode barrier infrared detector devices and superlattice barrier structures
US9196769B2 (en) * 2013-06-25 2015-11-24 L-3 Communications Cincinnati Electronics Corporation Superlattice structures and infrared detector devices incorporating the same
US10453979B2 (en) * 2015-12-18 2019-10-22 Flir System, Inc. Extended short-wave infrared strain-layered superlattice on indium arsenide substrate and associated methods
CN106711249B (en) * 2016-12-30 2018-04-03 云南师范大学 One kind is based on indium arsenic antimony（InAsSb）The preparation method of the Two-color Infrared Detectors of material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5594750A (en) * 1995-06-06 1997-01-14 Hughes Aircraft Company Selectively Si-doped InAs/A1AsSb short-period-superlattices as N-type cladding layers for mid-IR laser structures grown on InAs substrates

Also Published As

Publication number Publication date
CN112713209A (en) 2021-04-27

Similar Documents

Publication Publication Date Title
Tan et al. Emerging technologies for high performance infrared detectors
CN109285911B (en) Short wave/medium wave/long wave three-band infrared detector and preparation method thereof
CN110797424B (en) Antimonide superlattice very long wave infrared detector with dark current suppression structure
Xu et al. Recent progress on infrared photodetectors based on InAs and InAsSb nanowires
CN109920875B (en) Solar blind ultraviolet detector, manufacturing method and application thereof
CN111900217B (en) Medium/long wave infrared dual-waveband superlattice infrared detector and preparation method thereof
CN111710733B (en) Superlattice very-long wave infrared detector structure
Schönbein et al. A 10 μm GaAs/Al x Ga1− x As intersubband photodetector operating at zero bias voltage
CN213242573U (en) Medium-short wave double-color infrared detector based on Sb compound
Guo et al. Two-colour In0. 5Ga0. 5As quantum dot infrared photodetectors on silicon
Anabestani et al. Review on GaAsSb nanowire potentials for future 1D heterostructures: Properties and applications
US8994005B2 (en) Vertically correlated clusters of charged quantum dots for optoelectronic devices, and methods of making same
CN114664960A (en) Second-class superlattice infrared detector without stress layer and preparation method
Tang et al. InAs/GaAs quantum dot infrared photodetector (QDIP) with double Al/sub 0.3/Ga/sub 0.7/As blocking barriers
Yakimov Ge/Si heterostructures with Ge quantum dots for mid-infrared photodetectors
CN112713209B (en) Digital alloy and digital alloy medium wave infrared detector
JPH02119274A (en) Avalanche photodiode
CN111106203B (en) Infrared detector and manufacturing method thereof
Nasr Infrared radiation photodetectors
CN113972292B (en) InP-based band gap adjustable structure and photoelectric conversion device
JP5957185B2 (en) Photoelectric conversion element and solar cell
CN116344661B (en) InAs-InAsSb class-II superlattice infrared detector material structure working at high temperature
CN113284972B (en) Quantum well avalanche photodiode
JP2019220643A (en) Infrared detector
CN110518085B (en) Antimonide superlattice avalanche photodiode and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant