CN113284972B - Quantum well avalanche photodiode - Google Patents
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
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- H01L31/035236—Superlattices; Multiple quantum well structures
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- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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Abstract
A quantum well avalanche photodiode relates to the technical field of avalanche diodes, and solves the problem that the existing avalanche photodiode without high responsivity and low noise is provided, a hole avalanche diode comprises an n-type semiconductor absorption layer, an avalanche layer, a p-type semiconductor carrier collection layer, an n-type electrode and a p-type electrode which are sequentially arranged, the avalanche layer comprises II-type multiple quantum wells or multiple heterojunctions, and the energy band arrangement of the avalanche layer is II-type arrangement; the energy of the holes after the valence band order is obtained by the holes at the trap barrier interface of the II-type multiple quantum well or the p-type n-type interface of the multiple heterojunction is equal to the ionization threshold energy of the holes, and the holes are subjected to a collision ionization process; the energy of electrons losing conduction band orders at the well barrier interface of the II-type multiple quantum well or the p-type n-type interface of the multiple heterojunction is smaller than the ionization threshold energy, and the electrons do not collide and ionize. The invention realizes the characteristics of high multiplication factor and low noise and improves the performance index of the existing avalanche photodiode.
Description
Technical Field
The invention relates to the technical field of avalanche diodes, in particular to a quantum well avalanche photodiode.
Background
Avalanche photodiodes are a typical high performance photodetector structure and have high gain and high speed characteristics compared to photoconductive and schottky junction photodetectors. The working principle is that under the action of a high built-in electric field, a photon-generated carrier generates an avalanche multiplication effect, so that the photocurrent is exponentially multiplied. However, when avalanche occurs in the photogenerated carriers, an avalanche process also occurs in the noise current of the detector, and the noise performance of the detector is further reduced. When the structure of the detector is designed, the performance compromise problem of responsivity and noise is inevitably considered, and the realization of high responsivity and low noise is a difficult point of current research.
Disclosure of Invention
The invention provides a quantum well avalanche photodiode, aiming at solving the problem that the existing avalanche photodiode without high responsivity and low noise is not provided.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a quantum well avalanche photodiode is a hole avalanche photodiode and comprises an n-type semiconductor absorption layer, an avalanche layer and a p-type semiconductor carrier collection layer which are sequentially arranged, wherein the n-type semiconductor absorption layer is connected with an n-type electrode, the p-type semiconductor carrier collection layer is connected with a p-type electrode, the avalanche layer comprises a II-type multi-quantum well or a multi-heterojunction, and the energy band arrangement of the avalanche layer is II-type arrangement; the hole energy is equal to the hole ionization threshold energy after the energy with the valence band step value is obtained by the holes at the well barrier interface of the II type multiple quantum well or the p type n type interface of the multiple heterojunction, and the electron energy is less than the electron ionization threshold energy after the energy with the conduction band step value is lost by the electrons at the well barrier interface of the II type multiple quantum well or the p type n type interface of the multiple heterojunction.
The invention has the beneficial effects that:
according to the quantum well avalanche photodiode, through the energy band structure of the II-type multiple quantum well or the multiple heterojunction, the structure parameters of the II-type multiple quantum well or the multiple heterojunction are adjusted, the hole ionization coefficient is greatly improved, the ionization coefficient of electrons is reduced, the high avalanche multiplication factor is obtained, and meanwhile, the excessive noise of the avalanche diode is reduced; the band order of the quantum well structure is utilized to improve the certainty of the space position of hole collision ionization; thereby greatly reducing the noise of the avalanche diode. The avalanche region of the avalanche diode is designed into an energy band structure of a II-type multi-quantum well or a multi-heterojunction, so that the problem that noise is difficult to reduce in the prior art is solved, the characteristics of high multiplication factor and low noise are realized, and the performance index of the conventional avalanche photodiode is improved.
Drawings
Fig. 1 is a schematic structural diagram of a quantum well avalanche photodiode according to the present invention.
Fig. 2 is a schematic diagram of the structure and energy band of a quantum well avalanche diode of the present invention.
Fig. 3 shows the electron hole transition process with the participation of spin-orbit cleavage level in a quantum well avalanche diode of the present invention.
Fig. 4 is a diode energy band structure corresponding to a type II multiple quantum well of a quantum well avalanche diode structure of the present invention.
In the figure: 1. n-type semiconductor absorption layer, 2, avalanche layer, 3, p-type semiconductor carrier collection layer.
Detailed Description
In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.
A quantum well avalanche photodiode is a hole avalanche photodiode which comprises an n-type semiconductor absorption layer 1, an avalanche layer 2, a p-type semiconductor carrier collection layer 3, an n-type electrode and a p-type electrode, wherein as shown in figure 1, the n-type semiconductor absorption layer 1 is positioned on one side of the avalanche layer 2, the p-type semiconductor carrier collection layer 3 is positioned on the other side of the avalanche layer 2, the n-type semiconductor absorption layer 1 is connected with the n-type electrode, and the p-type semiconductor carrier collection layer 3 is connected with the p-type electrode. The n-type semiconductor absorption layer 1 serves as an absorption region, the avalanche layer 2 serves as an avalanche multiplication region, and the p-type semiconductor carrier collection layer 3 serves as a carrier collection region. The avalanche layer 2 comprises a type II multiple quantum well or a multiple heterojunction, the energy band arrangement of the type II multiple quantum well is a type II arrangement, and the energy band arrangement of the multiple heterojunction is a type II arrangement. The avalanche layer 2 adopts a II type multiple quantum well or a multiple heterojunction, the energy of holes obtained by the holes at the well barrier interface of the II type multiple quantum well or the p type n type interface of the multiple heterojunction is equal to the ionization threshold energy of the holes, and the energy of electrons lost at the well barrier interface of the II type multiple quantum well or the p type n type interface of the multiple heterojunction is smaller than the ionization threshold energy of the electrons.
The p-type semiconductor carrier collection layer 3 is made of p-type semiconductor material such as GaAs, GaSb, etc.
The n-type semiconductor absorption layer 1 is designed to be a narrow band gap material or a material with gradually changed band gap, so that a wide absorption spectrum range can be obtained, the n-type semiconductor absorption layer 1 can be made of GaAs, GaSb, InAs and other materials, and if the n-type semiconductor absorption layer 1 is made of GaAs, GaSb, InAs and other materials, the avalanche photodiode responds to light with the wavelength of less than 873 nm; if GaSb material is used, the avalanche photodiode responds to light with a wavelength less than 1675 nm. The n-type semiconductor absorption layer 1 may be made of GaAs with gradually changing Sb composition 1-x Sb x Material, 0 < x < 1, i.e. n-type semiconductor absorber layer 1 comprising a plurality of GaAs layers arranged in series 1-x Sb x Layer of different GaAs 1-x Sb x The x values vary from layer to layer, and the n-type semiconductor absorber layer 1, which varies gradually in composition, is typically: the value of x is GaAs with sequential setting 1-x Sb x The layers increase in sequence in a direction away from the avalanche layer 2. In with y gradually changing may also be used for the n-type semiconductor absorption layer 1 y Ga 1-y As material, 0 < y < 1, n-type semiconductor absorption layer 1 including multiple In sequentially arranged y Ga 1-y As layer of different In y Ga 1-y The y value varies between As layers, and the n-type semiconductor absorption layer 1 of gradually changing composition is generally: y value In with In set sequentially y Ga 1-y The As layers increase in sequence in a direction away from the avalanche layer 2. However, the gradual change in composition is not required to be linear or not. By gradually changing the composition of the alloy material, a wider response wavelength range can be obtained.
Unlike conventional multiplication regions which use a single component material, the multiplication region of the present invention usesA multiple quantum well structure. In the following, a hole avalanche photodiode using a type II multiple quantum well as the avalanche layer 2 is taken as an example for detailed description, and in order to obtain a high avalanche multiplication factor, it is necessary to make the avalanche region have a high hole ionization coefficient; to obtain low noise, it is necessary to make the ionization coefficient of holes much larger than that of electrons. Taking the II type multi-quantum well material as GaAsSb/GaInSb as an example, i.e. GaAs 1-z Sb z /Ga 1-m In m Sb II type multiple quantum well, 0 < z < 1, 0 < m < 1, are fixed for both GaAs and GaSb ionization coefficients, and are different from each other, so GaAs is obtained by adding Sb to GaAs 1-z Sb z Alloys, GaAs as a function of the Sb composition z 1- z Sb z The hole ionization coefficient and the electron ionization coefficient of (a) are changed, so that an optimal Sb component can be found, the hole ionization coefficient is maximized, the electron ionization coefficient is minimized, and the ionization coefficient ratio k, k is the hole ionization coefficient beta/the electron ionization coefficient alpha, beta is the exp (-E) of the material per se is improved i/ qEλ 0 ) Where q is the electron charge, E is the electric field strength of the avalanche multiplication region, E i Is the ionization threshold energy.
A quantum well avalanche diode structure and energy band schematic of the invention is shown in FIG. 2, E g1 Showing a forbidden band width of a carrier collecting region, E g2 Indicating the forbidden bandwidth of the absorption region. Typically, the energetic holes of the avalanche multiplication region collide within the material, creating an electron-hole pair. When the semiconductor has a spin-orbit energy level, the collision ionization process is shown in fig. 3, which shows an avalanche process involving a spin-orbit cleavage energy level, and fig. 3 shows a conduction band energy level, a light hole energy level, a heavy hole energy level, and a spin-orbit energy level E from top to bottom, respectively SO When a semiconductor has a spin-orbit energy level, two processes of C to D (transition of spin-orbit electrons to the valence band) and I to H (transition of valence band electrons to the conduction band) occur when high-energy holes collide and ionize, generating two holes and one electron, and the hole ionization coefficient is larger than the electron ionization coefficient. In the mode of FIG. 3, the ionization coefficient of holes is separated from the spin-orbit energy level by Δ and the forbidden band width E g Is closely related to the relative magnitude of (a) when Δ ═ E g The transition resonance is generated, the ionization coefficient of the hole is far larger than that of the electron, and the great ionization coefficient ratio of the hole to the electron can be obtained. For alloy materials, the forbidden band width and the self-selecting track splitting value are changed along with the change of alloy components, such as: for GaAs 1-z Sb z With z increasing from 0 to 1, the forbidden bandwidth decreases from 1.42eV to 0.74eV, while the spin-orbit splitting value increases and then decreases, there being a suitable Sb component to equalize the forbidden bandwidth and the spin-orbit splitting value. Thus using a GaAs of suitable composition 1-z Sb z The method achieves the purposes of improving the hole ionization coefficient and reducing the electron ionization coefficient, and realizes the maximum hole ionization coefficient and the minimum electron ionization coefficient of the GaAsSb alloy.
The avalanche multiplication region is designed into a II type multi-quantum well structure, and the electron affinity of GaAsSb is smaller than that of GaInSb, so GaAs is 1-z Sb z Having a conduction band energy level higher than Ga 1-m In m Sb, electrons being confined to Ga 1-m In m In the Sb layer; according to the size relation of the forbidden bands of the two, GaAs 1-z Sb z Valence band of is also higher than Ga 1-m In m Sb, GaAs with holes confined in multiple quantum wells 1-z Sb z In a layer. By varying Ga 1-m In m The In component size of Sb (0 < m < 1) increases the barrier height of the valence band, so that GaAs 1-z Sb z The valence band energy level separation of the organic electroluminescent material further improves the ionization coefficient of the hole. Since GaAs 1-z Sb z And Ga 1-m In m Sb forms a II-type energy band structure, namely the energy band arrangement is II-type arrangement, potential barriers of electrons and holes exist at different interfaces of a conduction band and a valence band, so that a discontinuous energy band structure is formed at the interface, and the conduction band step and the valence band step are respectively delta E C And Δ E V FIG. 4, in which the open circles represent holes, the filled circles represent electrons, E is the electric field intensity of the avalanche multiplication region, E C1 、E C2 、E V1 And E V2 The conduction band energy level of the carrier collection region, the conduction band energy level of the absorption region, the valence band energy level of the carrier collection region, and the valence band energy level of the absorption region are respectively indicated. When the cavity reaches GaAs 1-z Sb z When laminated, obtain Δ E V The additional energy, corresponding to the ionization threshold energy of the holes, is reduced by Δ E V When the electron reaches GaAs 1-z Sb z When layered, will lose Δ E C Corresponding to an increase in the ionization threshold energy of the electron by Δ E C . Therefore, when a II-type multi-quantum well structure is designed, the valence band order and the conduction band order are increased, the ionization coefficient of a hole is improved, and a higher k value is obtained and reaches more than 20. In addition, according to the difference of the electron and hole mean free path in the quantum well structure, the thickness of each layer of the quantum well is adjusted, and for holes, the holes obtain delta E at the well barrier interface of the quantum well V The hole energy is just equal to the hole ionization threshold energy, and the electron energy when the conduction band order of the electrons is lost at the trap barrier interface of the II type multiple quantum well is less than the electron ionization threshold energy, so that the hole collision ionization only occurs at the trap barrier interface of the II type multiple quantum well (such as the area indicated by the oval circle in figure 4), and the electrons do not generate the collision ionization. Increasing the certainty of the collision-ionization spatial position and reducing the noise caused by random changes in the collision-ionization position.
The avalanche photodiode is prepared in a specific mode as follows: firstly, a buffer layer with the thickness of 500nm is grown on the surface of a GaAs substrate by adopting a molecular beam epitaxy technology, then a heavily doped p-type GaAs layer with the thickness of 1 mu m is grown on the buffer layer to be used as a p-type semiconductor carrier collecting layer 3, and the growth temperature is 620 ℃. Subsequent growth of GaAs 1-z Sb z /Ga 1-m In m And the Sb II type multi-quantum well structure, wherein m is more than 0 and less than 0.3, and z is more than 0 and less than 0.6. GaAs 1-z Sb z Ga with a thickness of 10-50nm 1-m In m The thickness of Sb is 10-50 nm. Finally in GaAs 1-z Sb z /Ga 1-m In m Continuously growing n-type GaAs on Sb II type multi-quantum well 1-x Sb x The layer is used as an n-type semiconductor absorption layer 1, the thickness is 1-2 μm, and x is more than 0.8 and less than 1. Etching and metal thermal evaporation on p-type GaAs layer and n-type GaAs layer 1-x Sb x The layers were prepared separately.
If the avalanche layer 2 does not include a type II multiple quantum well but includes a multiple heterojunction, the multiple heterojunction material may be p-GaAs/n-GaAs/p-GaSb/n-GaSb.
The quantum well avalanche photodiode of the invention can obtain the corresponding avalanche layer 2 structure by the avalanche layer 2 with the energy band arrangement of type II, the hole energy equal to the hole ionization threshold energy after the energy of the valence band step value is obtained by the holes at the well barrier interface of type II multiple quantum wells or the p-type n-type interface of multiple heterojunctions, or the electron energy smaller than the electron ionization threshold energy after the energy of the conduction band step value is lost at the well barrier interface of type II multiple quantum wells or the p-type n-type interface of multiple heterojunctions, thereby improving the hole ionization coefficient, obtaining high avalanche multiplication factor, reducing the electron ionization coefficient, improving the ratio of the avalanche hole to the electron ionization coefficient, reducing the excess noise of the avalanche diode, increasing the certainty of the collision ionization position by the type II multiple quantum well structure or the multiple heterojunctions, reducing the random collision ionization noise of the diode, an avalanche photodiode with high responsivity and low noise is realized.
The avalanche multiplication factor and the noise are two important parameters of the avalanche photodiode, and by designing the hole avalanche type photodiode structure, on one hand, the hole ionization coefficient is improved, the electron ionization coefficient is reduced, and the ionization coefficient ratio of holes and electrons is improved, so that not only can a high avalanche multiplication factor be obtained, but also the excessive noise can be reduced; on the other hand, a discontinuous non-uniform energy band structure is formed through the quantum well of the avalanche region, so that the certainty of collision ionization is improved, and the noise of the hole avalanche photodiode is reduced from two aspects.
Claims (9)
1. A quantum well avalanche photodiode is characterized in that the avalanche photodiode is a hole avalanche photodiode and comprises an n-type semiconductor absorption layer, an avalanche layer and a p-type semiconductor carrier collection layer which are sequentially arranged, wherein the n-type semiconductor absorption layer is connected with an n-type electrode, the p-type semiconductor carrier collection layer is connected with a p-type electrode, the avalanche layer comprises a II-type multiple quantum well or a multiple heterojunction, and the energy band arrangement of the avalanche layer is II-type arrangement; the hole energy is equal to the hole ionization threshold energy after the energy with the valence band step value is obtained by the holes at the well barrier interface of the II type multiple quantum well or the p type n type interface of the multiple heterojunction, and the electron energy after the electron losing the valence band step value at the well barrier interface of the II type multiple quantum well or the p type n type interface of the multiple heterojunction is smaller than the electron ionization threshold energy.
2. A quantum well avalanche photodiode according to claim 1, wherein said n-type semiconductor absorption layer employs GaAs with x increasing progressively in a direction away from the avalanche layer 1-x Sb x Or In with y gradually increasing away from the avalanche layer y Ga 1-y As，0＜x＜1，0＜y＜1。
3. A quantum well avalanche photodiode according to claim 2, wherein said n-type semiconductor absorption layer comprises a plurality of GaAs layers arranged in sequence 1-x Sb x Layer of different GaAs 1-x Sb x The x value is different between layers, or the n-type semiconductor absorption layer comprises a plurality of In arranged In sequence y Ga 1-y As layer of different In y Ga 1-y The y value differs between As layers.
4. A quantum well avalanche photodiode according to claim 2, wherein x is 0.8 < x < 1.
5. The quantum well avalanche photodiode of claim 1, wherein the type II multiple quantum well material is GaAs 1-z Sb z /Ga 1-m In m Sb，0＜z＜1，0＜m＜1。
6. The quantum well avalanche photodiode of claim 5, wherein said GaAs is 1-z Sb z Has a thickness of 10-50nm and Ga 1-m In m The thickness of Sb is 10-50 nm.
7. A quantum well avalanche photodiode according to claim 5, wherein m is in the range 0 < m < 0.3 and z is in the range 0 < z < 0.6.
8. A quantum well avalanche photodiode according to claim 1, wherein the material of said multiple heterojunction is p-GaAs/n-GaAs/p-GaSb/n-GaSb.
9. A quantum well avalanche photodiode according to claim 1, wherein the material used for said p-type semiconductor carrier collection layer is GaAs or GaSb.
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