CN112713204A - 太阳能电池叠层钝化结构 - Google Patents
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- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 28
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 28
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 28
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 28
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 28
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 28
- 229910020286 SiOxNy Inorganic materials 0.000 claims abstract description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
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- 238000005215 recombination Methods 0.000 description 1
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Abstract
本发明属于太阳能技术领域，涉及一种太阳能电池叠层钝化结构，它包括P型硅衬底，P型硅衬底正面从里到外依次设有发射结区和第一SiNx膜，Ag电极穿过第一SiNx膜后连接发射结区，所述的P型硅衬底背面从里到外依次设有第二SiO2膜、SiOxNy膜和第二SiNx膜，铝背场依次穿过第二SiNx膜、SiOxNy膜和第二SiO2膜后与P型硅衬底接触。本发明中的背面叠层钝化结构含有丰富的H+，因此本发明的太阳能电池钝化结构具有良好的钝化效果。
Description
技术领域
本发明属于太阳能技术领域，涉及一种太阳能电池叠层钝化结构。
背景技术
为了提高晶硅太阳能电池的效率，必须对电池表面进行良好的钝化，降低表面缺陷复合从而提高电池的开路电压。目前，产业化PERC电池最常见的钝化技术是正面氮化硅钝化膜,背面用氧化铝和氮化硅层进行叠层钝化。
发明内容
本发明的目的是针对上述问题，提供一种太阳能电池叠层钝化结构。
为达到上述目的，本发明采用了下列技术方案：
一种太阳能电池叠层钝化结构，包括P型硅衬底，P型硅衬底正面从里到外依次设有发射结区和第一SiNx膜，Ag电极穿过第一SiNx膜后连接发射结区，所述的P型硅衬底背面从里到外依次设有第二SiO2膜、SiOxNy膜和第二SiNx膜，铝背场依次穿过第二SiNx膜、SiOxNy膜和第二SiO2膜后与P型硅衬底接触。
进一步的，所述的第二SiO2膜厚度为0-10nm。
进一步的，所述的SiOxNy膜为PECVD法沉积，厚度为1nm-100nm。
进一步的，所述的SiOxNy膜为单独的Si0xNy钝化层或者是不同折射率的SiOxNy叠层膜。
进一步的，所述的第二SiNx膜为PECVD法沉积的SiNx层，厚度为10nm-150nm。
进一步的，所述的第二SiNx膜厚度为10nm-150nm。
进一步的，所述的第二SiNx膜为单独的SiNx钝化层或是不同折射率的SiNx叠层膜。
进一步的，发射结区包括位于P型硅衬底正面由内而外设置的N++重扩散区、N+轻扩散区和第一SiO2膜。
进一步的，所述的N+轻扩散区的扩散方阻在120-180ohm/sq之间。
进一步的，N++重扩散区的扩散方阻在40-100ohm/sq。
进一步的，第一SiO2膜厚度为1-10nm，第一SiNx膜厚度为25-100nm。
与现有的技术相比，本发明的优点在于：
本发明中PERC电池的新型背面叠层钝化结构含有丰富的H+，因此本发明的太阳能电池钝化结构具有良好的钝化效果。
本发明的其它优点、目标和特征将部分通过下面的说明体现，部分还将通过对本发明的研究和实践而为本领域的技术人员所理解。
附图说明
图1为本发明的结构示意图。
图中：P型硅衬底1、发射结区2、第一SiNx膜3、Ag电极4、第二SiO2膜5、SiOxNy膜6、第二SiNx膜7、铝背场8、N++重扩散区9、N+轻扩散区10、第一SiO2膜11。
具体实施方式
为了使本技术领域的人员更好的理解本发明方案，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整的描述。
实施例1
如图1所示，一种太阳能电池叠层钝化结构，包括P型硅衬底1，P型硅衬底1正面从里到外依次设有发射结区2和第一SiNx膜3，Ag电极4穿过第一SiNx膜3后连接发射结区2，所述的P型硅衬底1背面从里到外依次设有第二SiO2膜5、SiOxNy膜6和第二SiNx膜7，铝背场8依次穿过第二SiNx膜7、SiOxNy膜6和第二SiO2膜5后与P型硅衬底1接触。
发射结区2包括位于P型硅衬底1正面由内而外设置的N++重扩散区9、N+轻扩散区10和第一SiO2膜11。
第二SiO2膜5厚度为0-10nm。SiOxNy膜6为PECVD法沉积，厚度为1nm-100nm。第二SiNx膜7为PECVD法沉积的SiNx层，厚度为10nm-150nm。第二SiNx膜7厚度为10nm-150nm。第一SiO2膜11厚度为0-10nm，第一SiNx膜3厚度为25-100nm。
第二SiOxNy膜6为单独的SiOxNy钝化层或是不同折射率的SiOxNy叠层膜。
第二SiNx膜7为单独的SiNx钝化层或是不同折射率的SiNx叠层膜。
N+轻扩散区10的扩散方阻在120-180ohm/sq之间，N++重扩散区9的扩散方阻在40-100ohm/sq。
在本实施例中，P型硅衬底1背面的膜中含有大量的H+，会在后续退火工艺或是烧结工艺中注入硅片表面和内部，对复合中心进行钝化。
实施例2
如图1所示，一种太阳能电池叠层钝化结构，包括P型硅衬底1，P型硅衬底1正面从里到外依次设有发射结区2和第一SiNx膜3，Ag电极4穿过第一SiNx膜3后连接发射结区2，所述的P型硅衬底1背面从里到外依次设有第二SiO2膜5、SiOxNy膜6和第二SiNx膜7，铝背场8依次穿过第二SiNx膜7、SiOxNy膜6和第二SiO2膜5后与P型硅衬底1接触。发射结区2包括位于P型硅衬底1正面由内而外设置的N++重扩散区9、N+轻扩散区10和第一SiO2膜11。
用体积比为47％的KOH溶液去除P型硅衬底1的机械损伤层2-3um，然后用体积比为47％的KOH溶液对硅片表面进行腐蚀，形成2-3um的金字塔结构。
采用POCl3液态低压扩散进行扩散，形成p-n结，为N+轻扩散区10，扩散温度为810C，工艺时长为90min，扩散方阻控制在120-180ohm/sq之间。
激光SE掺杂，通过激光高温将扩散后磷硅玻璃中的P原子进行激光掺杂，形成局部重掺杂区域，为N++重扩散区9，扩散方阻为40-100ohm/sq。
链式清洗机去除P型硅衬底背结，并对硅片背面进行3-4um的抛光，去除周边的p-n结。
氧化在P型硅衬底片的正面背面和边缘生成薄的SiO2膜，第一SiO2膜11和第二SiO2膜5和，厚度分别为0-10nm。
PECVD沉积背面SiOxNy膜6，厚度为1-100nm。
PECVD沉积背面第二SiNx膜7，厚度为10-150nm。
PECVD沉积正面第一SiNx膜3，厚度为25-100nm。
采用532nm的ns激光器在背面叠层膜上进行局部开槽，打开叠层钝化膜。
印刷背面Ag电极烘干后，再印刷背面Al浆料。
印刷正面Ag电池并在875℃快速烧结，形成Ag电极4的良好的欧姆接触。
实施例3
如图1所示，一种太阳能电池叠层钝化结构，包括P型硅衬底1，P型硅衬底1正面从里到外依次设有发射结区2和第一SiNx膜3，Ag电极4穿过第一SiNx膜3后连接发射结区2，所述的P型硅衬底1背面从里到外依次设有SiOxNy膜6和第二SiNx膜7，铝背场8依次穿过第二SiNx膜7、SiOxNy膜6与P型硅衬底1接触。发射结区2包括位于P型硅衬底1正面由内而外设置的N++重扩散区9、N+轻扩散区10和第一SiO2膜11。
用体积比为47％的KOH溶液去除P型衬底的机械损伤层2-3um，然后用体积比为47％的KOH溶液对硅片表面进行腐蚀，形成2-3um的金字塔结构。
采用POCl3液态低压扩散进行扩散，形成N+轻扩散区10，扩散温度为810C，工艺时长为90min，扩散方阻控制在120-180ohm/sq之间。
激光SE掺杂，通过激光高温将扩散后磷硅玻璃中的P原子进行激光掺杂，形成局部N++重扩散区9，扩散方阻为40-100ohm/sq.
链式清洗机去除背结，并对硅片背面进行3-4um的抛光，去除周边的p-n结。
氧化在硅片的正面和边缘生成薄的SiO2膜，第一SiO2膜11，厚度为0-10nm。
PECVD沉积背面SiOxNy膜和第二SiNx膜，厚度分别为1-100nm和10-150nm。PECVD法沉积正面第一SiNx膜，厚度为25-100nm。
采用532nm的ns激光器在背面叠层膜上进行局部开槽，打开叠层钝化膜。
印刷背面Ag电极烘干后，再印刷背面Al浆料。印刷正面Ag电池并在875C快速烧结，形成良好的欧姆接触。
本文中所描述的具体实施例仅仅是对本发明精神作举例说明。本发明所属技术领域的技术人员可以对所描述的具体实施例做各种各样的修改或补充或采用类似的方式替代，但并不会偏离本发明的精神。
Claims (10)
1.一种太阳能电池叠层钝化结构，包括P型硅衬底(1)，P型硅衬底(1)正面从里到外依次设有发射结区(2)和第一SiNx膜(3)，Ag电极(4)穿过第一SiNx膜(3)后连接发射结区(2)，其特征在于，所述的P型硅衬底(1)背面从里到外依次设有第二SiO2膜(5)、SiOxNy膜(6)和第二SiNx膜(7)，铝背场(8)依次穿过第二SiNx膜(7)、SiOxNy膜(6)和第二SiO2膜(5)后与P型硅衬底(1)接触。
2.根据权利要求1所述的太阳能电池叠层钝化结构，其特征在于，所述的第二SiO2膜(5)厚度为0-10nm。
3.根据权利要求1所述的太阳能电池叠层钝化结构，其特征在于，所述的SiOxNy膜(6)为PECVD法沉积，厚度为1nm-100nm。
4.根据权利要求1所述的太阳能电池叠层钝化结构，其特征在于，所述的第二SiNx膜(7)为PECVD法沉积的SiNx层，厚度为10nm-150nm。
5.根据权利要求4所述的太阳能电池叠层钝化结构，其特征在于，所述的第二SiNx膜(7)厚度为10nm-150nm。
6.根据权利要求1所述的太阳能电池叠层钝化结构，其特征在于，所述的SiOxNy膜(7)不同折射率的SiOxNy叠层膜。
7.根据权利要求1所述的太阳能电池叠层钝化结构，其特征在于，所述的第二SiNx膜(7)为单独的SiNx钝化层或是不同折射率的SiNx叠层膜。
8.根据权利要求1所述的太阳能电池叠层钝化结构，其特征在于，发射结区(2)包括位于P型硅衬底(1)正面由内而外设置的N++重扩散区(9)、N+轻扩散区(10)和第一SiO2膜(11)。
9.根据权利要求7所述的太阳能电池叠层钝化结构，其特征在于，所述的N+轻扩散区(10)的扩散方阻在120-180ohm/sq之间，所述N++重扩散区(9)的扩散方阻在40-100ohm/sq。
10.根据权利要求7所述的太阳能电池叠层钝化结构，其特征在于，第一SiO2膜(11)厚度为1-10nm，第一SiNx膜(3)厚度为25-100nm。
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| KR1020237024818A KR20230124660A (ko) | 2021-01-19 | 2021-05-21 | 태양전지 적층 패시베이션 구조 및 이의 제조방법 |
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| CN102097514B (zh) * | 2010-11-04 | 2013-01-30 | 友达光电股份有限公司 | 太阳能电池 |
| AU2019290813B2 (en) * | 2018-06-22 | 2022-07-28 | Jingao Solar Co., Ltd. | Crystalline silicon solar cell and preparation method therefor, and photovoltaic assembly |
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