CN112701234B - Quantum dot display panel and preparation method thereof - Google Patents
Quantum dot display panel and preparation method thereof Download PDFInfo
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- CN112701234B CN112701234B CN202011563423.6A CN202011563423A CN112701234B CN 112701234 B CN112701234 B CN 112701234B CN 202011563423 A CN202011563423 A CN 202011563423A CN 112701234 B CN112701234 B CN 112701234B
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- H—ELECTRICITY
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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Abstract
The embodiment of the invention discloses a quantum dot display panel and a preparation method thereof. According to the technical scheme provided by the embodiment of the invention, the ultraviolet light is used for exciting the light curing adhesive layer of the patterned quantum dot light curing adhesive layer with different colors, the water oxygen blocking layer, the ultraviolet light reflecting layer, the blue light quantum dot gel layer, the green light quantum dot gel layer, the red light quantum dot gel layer and the ultraviolet light backlight module are sequentially stacked and installed along the display screen from outside to inside, the ultraviolet light backlight module emits ultraviolet light to excite red, green and blue quantum dots on the multiple layers of quantum dot gel layers, full-color display is realized, the light emitting efficiency is improved, the mutual interference of the red, green and blue quantum dots is avoided, and the compatibility of various backlight sources is improved.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a quantum dot display panel and a preparation method thereof.
Background
The quantum dot color film is a key component of a display device for realizing ultrahigh color gamut full-color display, and in the prior art, red and green quantum dots are mixed together to form a quantum dot color conversion film, and then the quantum dot color conversion film is matched with a liquid crystal display module and a blue light LED light source to realize high color gamut display. However, this solution has the following problems: 1) the red, green and blue lights after color conversion need to be filtered by a color filter, and the luminous efficiency is extremely low; 2) the red quantum dots and the green quantum dots are directly mixed, and the two quantum dots can mutually influence in the preparation and use processes of the diaphragm, so that the performance is deteriorated, and the reliability of the diaphragm is poor; 3) the application field is limited, and the active light-emitting Micro-LED and OLED display device can not be matched for use.
Disclosure of Invention
The embodiment of the invention provides a quantum dot display panel and a preparation method thereof, which are used for improving the luminous efficiency, avoiding the mutual interference of red, green and blue quantum dots and improving the compatibility of various backlight sources.
In a first aspect, an embodiment of the present invention provides a quantum dot display panel, where the display panel includes:
the device comprises an ultraviolet light backlight module and a quantum dot color film laminated structure positioned on a light-emitting surface of the ultraviolet light backlight module;
the quantum dot color film laminated structure comprises:
the first water and oxygen blocking layer is positioned on the light-emitting surface of the ultraviolet light backlight module;
a first dielectric substrate on the first water oxygen barrier layer;
the light-transmitting structure comprises a plurality of strip-shaped retaining wall structures, a first medium base material and a second medium base material, wherein the retaining wall structures extend along a first direction and are arranged along a second direction, the second direction is perpendicular to the first direction, and gaps between every two adjacent retaining wall structures form a light-transmitting area;
the first patterned quantum dot light-cured adhesive layer, the second dielectric substrate, the second patterned quantum dot light-cured adhesive layer, the second packaging adhesive layer, the third dielectric substrate, the third patterned quantum dot light-cured adhesive layer and the third packaging adhesive layer are sequentially stacked on the first patterned quantum dot light-cured adhesive layer in the light-transmitting area; the vertical projections of the first patterned quantum dot photocuring glue layer, the second patterned quantum dot photocuring glue layer and the third patterned quantum dot photocuring glue layer on the first water-oxygen barrier layer are not overlapped; the first patterned quantum dot photocuring adhesive layer, the second patterned quantum dot photocuring adhesive layer and the third patterned quantum dot photocuring adhesive layer are any one of a red light patterned quantum dot photocuring adhesive layer, a green light patterned quantum dot photocuring adhesive layer and a blue light patterned quantum dot photocuring adhesive layer and are different from each other;
and the second water and oxygen barrier layer is positioned on the third packaging adhesive layer.
Optionally, the first patterned quantum dot light-cured adhesive layer is a red light patterned quantum dot light-cured adhesive layer, the second patterned quantum dot light-cured adhesive layer is a green light patterned quantum dot light-cured adhesive layer, and the third patterned quantum dot light-cured adhesive layer is a blue light patterned quantum dot light-cured adhesive layer.
Optionally, the quantum dot display panel further includes an ultraviolet reflection layer, and the ultraviolet reflection layer is located between the third encapsulation adhesive layer and the second water and oxygen barrier layer in the light-transmitting region.
Optionally, the first patterned quantum dot photocuring glue layer includes a plurality of strip-shaped first quantum dot gel layers extending along a first direction and arranged along a second direction, the second patterned quantum dot photocuring glue layer includes a plurality of strip-shaped second quantum dot gel layers extending along the first direction and arranged along the second direction, and the third patterned quantum dot photocuring glue layer includes a plurality of strip-shaped third quantum dot gel layers extending along the first direction and arranged along the second direction;
and a first quantum dot gel layer, a second quantum dot gel layer and a third quantum dot gel layer are arranged in the light-transmitting area between the retaining wall structures.
Optionally, the first patterned quantum dot light-curing glue layer includes a plurality of first quantum dot gel columns extending along a first direction and arranged along a second direction, and the first quantum dot gel columns include a plurality of first quantum dot gel blocks arranged along the first direction; the second patterned quantum dot light-cured glue layer comprises a plurality of second quantum dot gel columns extending along a second direction and arranged along the second direction, and the second quantum dot gel columns comprise a plurality of second quantum dot gel blocks arranged along the second direction; the third patterned quantum dot light-cured glue layer comprises a plurality of third quantum dot gel columns extending along a third direction and arranged along a second direction, and the third quantum dot gel columns comprise a plurality of third quantum dot gel blocks arranged along the third direction;
and a first quantum dot gel column, a second quantum dot gel column and a third quantum dot gel column are arranged in the light-transmitting region between any adjacent retaining wall structures.
In a second aspect, an embodiment of the present invention further provides a method for manufacturing a quantum dot display panel, where the method includes:
providing an ultraviolet backlight module and a first medium substrate;
forming a first water oxygen barrier layer on a first medium substrate;
installing the first water and oxygen blocking layer on a light-emitting surface of the ultraviolet light backlight module;
forming a plurality of strip-shaped retaining wall structures on one side of the first medium base material, which is far away from the ultraviolet light backlight module, wherein the retaining wall structures extend along a first direction and are arranged along a second direction, the second direction is perpendicular to the first direction, and gaps between the adjacent retaining wall structures form a light transmission area;
sequentially forming a first patterned quantum dot photocuring glue layer, a first packaging glue layer, a second dielectric substrate, a second patterned quantum dot photocuring glue layer, a second packaging glue layer, a third dielectric substrate, a third patterned quantum dot photocuring glue layer and a third packaging glue layer which are stacked on the first dielectric substrate in the light-transmitting area; the vertical projections of the first patterned quantum dot light-cured adhesive layer, the second patterned quantum dot light-cured adhesive layer and the third patterned quantum dot light-cured adhesive layer on the first water-oxygen barrier layer are not overlapped; the first patterned quantum dot light-cured adhesive layer, the second patterned quantum dot light-cured adhesive layer and the third patterned quantum dot light-cured adhesive layer are respectively any one of a red light patterned quantum dot light-cured adhesive layer, a green light patterned quantum dot light-cured adhesive layer and a blue light patterned quantum dot light-cured adhesive layer and are different from each other;
and forming a second water oxygen barrier layer on the third packaging adhesive layer.
Optionally, before forming the second water oxygen barrier layer on the third encapsulation glue layer, the method further includes:
and forming an ultraviolet reflection layer on the third packaging layer.
Optionally, sequentially forming a stacked first patterned quantum dot photocuring glue layer, a first packaging glue layer, a second dielectric substrate, a second patterned quantum dot photocuring glue layer, a second packaging glue layer, a third dielectric substrate, a third patterned quantum dot photocuring glue layer and a third packaging glue layer on the first dielectric substrate in the light-transmitting region includes:
s1, preparing quantum dot gel;
coating quantum dot gel on the medium substrate in the light transmission area;
controlling the ultraviolet light backlight module to emit patterned ultraviolet light so as to cure the quantum dot gel in the corresponding region;
removing the uncured quantum dot gel to form the first patterned quantum dot light-cured glue layer;
s2, forming a first packaging adhesive layer on the first patterned quantum dot light curing adhesive layer;
s3, forming the second patterned quantum dot light-cured adhesive layer on the first packaging adhesive layer by adopting the method for forming the first patterned quantum dot light-cured adhesive layer in the S1;
s4, forming a second packaging adhesive layer on the second patterned quantum dot photocuring adhesive layer;
s5, forming the third patterned quantum dot light-cured adhesive layer on the second packaging adhesive layer by adopting the method for forming the first patterned quantum dot light-cured adhesive layer in the S1;
and S6, forming a third packaging adhesive layer on the third patterned quantum dot light curing adhesive layer.
Optionally, preparing the quantum dot gel comprises:
s1, preparing a quantum dot solution by a solution method;
s2, adding glue monomers into the quantum dot solution to form a glue mixed solution;
and S3, adding an ultraviolet initiator into the glue mixed liquid, and stirring to form the quantum dot gel.
Optionally, the preparing the quantum dot solution by the solution method includes:
s11, preparing a quantum dot core material solution by a solution method;
s12, adding a coating layer material into the quantum dot core material to form a core-shell structure quantum dot material solution;
s13, adding a surface ligand material solution into the core-shell structure quantum dot material solution;
and S14, obtaining the quantum dot solution through centrifugation and purification treatment.
Optionally, the quantum dot core material solution comprises A x M y E z A system; wherein, the element A is one of Ba, Ag, Na, Fe, In, Cd, Zn, Ga, Mg, Pb and Cs, the element M is one of S, Cl, O, As, N, P, Se, Te, Ti, Zr and Pb, and the element E is one of S, As, Se, O, Cl, Br and I.
Optionally, the value range of x is 0.3-2, the value range of y is 0.5-3, and the value range of z is 0-4.
Optionally, the quantum dot core material solution includes a composite of one or at least two of CdSe, InP, and CsPbBr 3.
Optionally, the coating layer material includes organic polymer solution, inorganic oxide, metal simple substance, alloy material, or a composite of multiple materials.
Optionally, forming a plurality of strip-shaped retaining wall structures on a side of the first dielectric substrate away from the ultraviolet light backlight module includes:
coating a retaining wall material adhesive film on the first medium base material;
controlling a light source in the ultraviolet light backlight module, which is positioned in the light transmitting area, to emit ultraviolet light so as to dissolve the retaining wall material adhesive film in the corresponding area;
and removing the dissolved retaining wall material adhesive film to form a plurality of strip-shaped retaining wall structures.
The quantum dot display panel provided by the embodiment of the invention comprises an ultraviolet light backlight module and a quantum dot color film laminated structure positioned on a light-emitting surface of the ultraviolet light backlight module, wherein the quantum dot color film laminated structure comprises a first water oxygen barrier layer, a first medium substrate, a plurality of strip-shaped retaining wall structures, a first packaging adhesive layer, a second medium substrate, a second patterned quantum dot photocuring adhesive layer, a second packaging adhesive layer, a third medium substrate, a third patterned quantum dot photocuring adhesive layer, a third packaging adhesive layer and a second water oxygen barrier layer, wherein the vertical projections of the first patterned quantum dot photocuring adhesive layer, the second patterned quantum dot photocuring adhesive layer and the third patterned quantum dot photocuring adhesive layer on the first water oxygen barrier layer are not overlapped, and the first patterned quantum dot photocuring adhesive layer, the second patterned quantum dot photocuring adhesive layer and the third patterned quantum dot photocuring adhesive layer are respectively a red light patterned quantum dot photocuring adhesive layer, Any one of the green light patterned quantum dot photocuring adhesive layer and the blue light patterned quantum dot photocuring adhesive layer is different from each other, a color filter is not used, according to the wavelength of the quantum dots, the blue light patterned quantum dot layer, the green light patterned quantum dot layer and the red light patterned quantum dot layer are sequentially arranged from outside to inside, so that the reabsorption of the long-wave quantum dot layer on the emitted light of the short-wave quantum dot layer is reduced, the overall luminous efficiency is improved, the red, green and blue quantum dots are arranged in different layers, the quantum dots cannot interfere with each other, the light emitting performance of the display panel is improved, and the display panel is compatible with various backlight sources, so that the application field of the display panel is widened.
Drawings
Fig. 1 is a schematic cross-sectional structure diagram of a quantum dot display panel according to an embodiment of the present invention;
fig. 2 is a schematic top view structure diagram of a quantum dot color film stack according to an embodiment of the present invention;
fig. 3 is a schematic top-view structural diagram of another quantum dot color film stack according to an embodiment of the present disclosure;
fig. 4 is a schematic flowchart of a method for manufacturing a quantum dot display panel according to an embodiment of the present invention;
fig. 5 is a schematic view illustrating a process of forming a retaining wall structure according to an embodiment of the present invention;
fig. 6 is a schematic diagram illustrating a process for preparing a patterned quantum dot photo-curing adhesive layer according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a process for forming a water oxygen barrier layer according to an embodiment of the present invention;
FIG. 8 is a schematic view of a process for forming an UV reflective layer according to an embodiment of the present invention;
fig. 9 is a schematic flowchart of a process of forming a quantum dot color film stack according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in further detail below with reference to the accompanying drawings. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention.
In addition, in order to further explain the technical means and effects of the present invention adopted to achieve the predetermined objects, the following detailed description of the embodiments, structures, features and effects of the quantum dot display panel and the method for manufacturing the same according to the present invention will be made with reference to the accompanying drawings and preferred embodiments.
The quantum dot display panel provided by the embodiment of the invention comprises an ultraviolet light backlight module and a quantum dot color film laminated structure positioned on a light-emitting surface of the ultraviolet light backlight module, wherein the quantum dot color film laminated structure comprises a first water oxygen barrier layer, a first medium substrate, a plurality of strip-shaped retaining wall structures, a first packaging adhesive layer, a second medium substrate, a second patterned quantum dot photocuring adhesive layer, a second packaging adhesive layer, a third medium substrate, a third patterned quantum dot photocuring adhesive layer, a third packaging adhesive layer and a second water oxygen barrier layer, wherein the vertical projections of the first patterned quantum dot photocuring adhesive layer, the second patterned quantum dot photocuring adhesive layer and the third patterned quantum dot photocuring adhesive layer on the first water oxygen barrier layer are not overlapped, and the first patterned quantum dot photocuring adhesive layer, the second patterned quantum dot photocuring adhesive layer and the third patterned quantum dot photocuring adhesive layer are respectively a red light patterned quantum dot photocuring adhesive layer, Any one of green light patterning quantum dot photocuring glue film and blue light patterning quantum dot photocuring glue film, and diverse, do not use color filter, improved luminous efficiency, and red, green, blue quantum dot different layer sets up, can not mutual interference between the quantum dot, promoted display panel's light-emitting performance, and compatible multiple backlight has widened display panel's application.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art based on the embodiments of the present invention without any creative work, belong to the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other embodiments that depart from the specific details disclosed herein, and it will be recognized by those skilled in the art that the present invention may be practiced without these specific details.
Next, the present invention is described in detail with reference to the schematic drawings, and in the detailed description of the embodiments of the present invention, the schematic drawings showing the structure of the device are not enlarged partially according to the general scale for convenience of description, and the schematic drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and height should be included in the actual fabrication.
Fig. 1 is a schematic cross-sectional structure diagram of a quantum dot display panel according to an embodiment of the present invention. As shown in fig. 1, the display panel includes: ultraviolet ray backlight unit 10 and be located the quantum dot color film laminated structure 11 on the surface of a light-emitting of ultraviolet ray backlight unit 10, wherein, quantum dot color film laminated structure 11 includes: a first water-oxygen barrier layer 12 on the light-emitting surface of the ultraviolet backlight module 10, a first dielectric substrate 13 on the first water-oxygen barrier layer 12, a plurality of strip-shaped retaining wall structures 14 on the first dielectric substrate 13, the retaining wall structures 14 extending along a first direction and being arranged along a second direction, the second direction being perpendicular to the first direction, gaps between adjacent retaining wall structures 14 forming a light-transmitting region Aa, a first packaging adhesive layer 16, a second dielectric substrate 17, a second patterned quantum dot light-curing adhesive layer 18, a second packaging adhesive layer 19, a third dielectric substrate 20, a third patterned quantum dot light-curing adhesive layer 21 and a third packaging adhesive layer 22 which are sequentially stacked on the first patterned quantum dot light-curing adhesive layer 15 in the light-transmitting region Aa, the first patterned quantum dot light-curing adhesive layer 15, the second patterned quantum dot light-curing adhesive layer 18 and the third patterned quantum dot light-curing adhesive layer 21 do not overlap with each other in a vertical projection on the first water-oxygen barrier layer 12, the first patterned quantum dot light-cured adhesive layer 15, the second patterned quantum dot light-cured adhesive layer 18 and the third patterned quantum dot light-cured adhesive layer 21 are respectively any one of a red light patterned quantum dot light-cured adhesive layer, a green light patterned quantum dot light-cured adhesive layer and a blue light patterned quantum dot light-cured adhesive layer, and are different from each other, and the second water-oxygen barrier layer 23 on the third packaging adhesive layer 22 is located
It should be noted that fig. 1 is only illustrated by two groups of pixel units separated by three retaining wall structures 14, but not limited thereto, in other embodiments of the present embodiment, the number of the retaining wall structures 14 may be three or more, and the number of the pixel units is determined by the number of the retaining wall structures 14. Referring to fig. 1, the ultraviolet backlight module 10 includes an ultraviolet backlight substrate 101 and a plurality of ultraviolet excitation units 102 respectively corresponding to red light quantum dots in a first patterned quantum dot photocuring adhesive layer, green light quantum dots in a second quantum dot gel layer, and blue light quantum dots in a third quantum dot gel layer, and the ultraviolet excitation units 102 may be directly formed on the ultraviolet backlight substrate 101.
It should be further noted that the ultraviolet excitation module 10 includes a plurality of ultraviolet excitation units 102 arranged in an array to implement pixel-level backlight, where the ultraviolet excitation units may be, for example, LED light sources, OLED light sources, Mini-LED light sources, Micro-LED light sources, plasma light sources, or semiconductor exciters, and a peak wavelength of light emitted by a backlight source in the ultraviolet backlight module may be, for example, 230-. In addition, the first water and oxygen barrier layer 12 is disposed on the light emitting surface of the ultraviolet excitation module 10, and the second water and oxygen barrier layer 23 is disposed on the third encapsulant layer 22, so as to prevent the corrosion of external water and oxygen to the quantum dot color film laminated structure.
In addition, the vertical projections of the first patterned quantum dot light-cured adhesive layer 15, the second patterned quantum dot light-cured adhesive layer 18 and the third patterned quantum dot light-cured adhesive layer 21 on the first water oxygen barrier layer 12 are not overlapped, the three layers are not shielded from each other, when the ultraviolet light excites the module 10 to emit ultraviolet light, the ultraviolet light can directly reach each patterned quantum dot light-cured adhesive layer, and the excited quantum dots emit corresponding light.
It should be further noted that, in one light-transmitting region Aa, one red quantum dot, one green quantum dot, and one blue quantum dot form one pixel unit structure, and the plurality of strip-shaped retaining wall structures 14 disposed between adjacent pixel unit structures can separate each pixel unit structure, so as to avoid the optical crosstalk phenomenon, and improve the resolution of the display device.
In the technical scheme provided by this embodiment, the quantum dot display panel includes an ultraviolet backlight module and a quantum dot color film laminated structure located on a light-emitting surface of the ultraviolet backlight module, and the quantum dot color film laminated structure includes a first water-oxygen blocking layer, a first dielectric substrate, a plurality of strip-shaped retaining wall structures, a first packaging adhesive layer, a second dielectric substrate, a second patterned quantum dot photocuring adhesive layer, a second packaging adhesive layer, a third dielectric substrate, a third patterned quantum dot photocuring adhesive layer, a third packaging adhesive layer, and a second water-oxygen blocking layer, wherein vertical projections of the first patterned quantum dot photocuring adhesive layer, the second patterned quantum dot photocuring adhesive layer, and the third patterned quantum dot photocuring adhesive layer on the first water-oxygen blocking layer are not overlapped, and the first patterned quantum dot photocuring adhesive layer, the second patterned quantum dot photocuring adhesive layer, and the third patterned quantum dot photocuring adhesive layer are red light patterned quantum dot photocuring adhesive layers, red light-red light-red light-red light-red light-red light-red light-red light-red light-light, Any one of green ray patterning quantum dot photocuring glue film and blue ray patterning quantum dot photocuring glue film, and the diverse does not use color filter, has improved luminous efficacy, and red, green, blue quantum dot different layer sets up, can not mutual interference between the quantum dot, has promoted display panel's light-emitting performance, and compatible multiple backlight, has widened display panel's application.
Optionally, with reference to fig. 1, the first patterned quantum dot light-cured adhesive layer 15 is a red light patterned quantum dot light-cured adhesive layer, the second patterned quantum dot light-cured adhesive layer 18 is a green light patterned quantum dot light-cured adhesive layer, and the third patterned quantum dot light-cured adhesive layer 21 is a blue light patterned quantum dot light-cured adhesive layer.
Specifically, the three quantum dot gel layers are arranged according to the wavelength of the quantum dots, wherein the emission wavelength of the red quantum dot gel layer is generally 620-660 nm, the emission wavelength of the green quantum dot gel layer is 520-540 nm, the emission wavelength of the blue quantum dot gel layer is 440-470 nm, ultraviolet light emitted by the ultraviolet light backlight module 10 firstly passes through the red quantum dot gel layer with longer wavelength and finally passes through the blue quantum dot gel layer with shorter wavelength, and therefore reabsorption of the long wavelength quantum dot gel layer on the short wavelength quantum dot gel layer is reduced.
So, the luminous efficacy that the ultraviolet ray arouses as the backlight can be improved in the setting of arranging of quantum dot gel layer to reduce the resorption of long wavelength patterning quantum dot photocuring glue film to short wavelength patterning quantum dot photocuring glue film emission light, promote whole luminous efficacy.
Optionally, with continued reference to fig. 1, the quantum dot display panel further includes an ultraviolet reflection layer 24, where the ultraviolet reflection layer 24 is located between the third encapsulation adhesive layer 22 and the second water and oxygen barrier layer 23 in the light-transmitting region.
It should be noted that, in the present embodiment, the ultraviolet reflection layer 24 can selectively transmit red light and green light, and simultaneously reflect ultraviolet light with a peak wavelength of emission light of 230-.
Fig. 2 is a schematic top-view structure diagram of a quantum dot color film stack according to an embodiment of the present invention. As shown in fig. 2, the first patterned quantum dot photo-cured adhesive layer includes a plurality of strip-shaped first quantum dot gel layers 21 extending along the first direction y and arranged along the second direction x, the second patterned quantum dot photo-cured adhesive layer includes a plurality of strip-shaped second quantum dot gel layers 22 extending along the first direction y and arranged along the second direction x, the third patterned quantum dot photo-cured adhesive layer includes a plurality of strip-shaped third quantum dot gel layers 23 extending along the first direction y and arranged along the second direction x, and a first quantum dot gel layer 21, a second quantum dot gel layer 22 and a third quantum dot gel layer 23 are disposed in a light-transmitting region between any adjacent retaining wall structures 24, so that the retaining wall structures are used to separate each pixel unit, thereby avoiding a photo-crosstalk phenomenon and improving the resolution of the display device.
It should be noted that the quantum dot materials on the first patterned quantum dot photocuring adhesive layer, the second patterned quantum dot photocuring adhesive layer, and the third patterned quantum dot photocuring adhesive layer may be distributed in a strip shape, and the line width of the quantum dot material on each quantum dot gel layer is equal to the width of the red sub-pixel point, the green sub-pixel point, or the blue sub-pixel point.
Optionally, fig. 3 is a schematic top-view structure diagram of another quantum dot color film stack provided in an embodiment of the present invention. As shown in fig. 3, the first patterned quantum dot photo-curing glue layer includes a plurality of first quantum dot gel columns extending along the first direction y and arranged along the second direction x, the first quantum dot gel columns 31 may include a plurality of first quantum dot gel blocks 311 arranged along the first direction y, the second patterned quantum dot photo-curing glue layer includes a plurality of second quantum dot gel columns 32 extending along the first direction y and arranged along the second direction x, the second quantum dot gel columns 32 may include a plurality of second quantum dot gel blocks 321 arranged along the second direction x, the third patterned quantum dot photo-curing glue layer includes a plurality of third quantum dot gel columns 33 extending along the first direction y and arranged along the second direction x, the third quantum dot gel columns may include a plurality of third quantum dot gel blocks 331, one first quantum dot gel column 31, one second quantum dot gel column 31, one third quantum dot gel column 31, and one third quantum dot gel column 331 are disposed in a light-transmitting region between any two adjacent retaining wall structures 34, One second quantum dot gel column 32 and one third quantum dot gel column 33.
It should be noted that, when different patterning quantum dot photocuring glue films include that a plurality of quantum dot gel that extend along the first direction and arrange along the second direction are listed as, and quantum dot gel is listed as and is the cubic distribution including a plurality of every quantum dot materials of arranging along the first direction, the size of every piece is equivalent to red sub pixel or green sub pixel or blue sub pixel's size, when every quantum dot material is the cubic distribution, the ultraviolet light arouses that the unit emits the emitting light that projects on the quantum dot gel layer is perfect to fall on every quantum dot, better promotion display panel's light-emitting performance.
Fig. 4 is a schematic flow chart of a method for manufacturing a quantum dot display panel according to an embodiment of the present invention. The method is suitable for preparing the quantum dot display panel in any embodiment, and as shown in fig. 4, the method specifically comprises the following steps:
s410, providing the ultraviolet backlight module and the first medium substrate.
And S420, forming a first water and oxygen barrier layer on the first medium base material.
S430, the first water and oxygen blocking layer is arranged on the light emitting surface of the ultraviolet light backlight module.
And S440, forming a plurality of strip-shaped retaining wall structures on one side of the first medium base material, which is far away from the ultraviolet backlight module, wherein the retaining wall structures extend along a first direction and are arranged along a second direction, the second direction is perpendicular to the first direction, and gaps between adjacent retaining wall structures form a light transmitting area.
S450, sequentially forming a first patterned quantum dot photocuring glue layer, a first packaging glue layer, a second dielectric substrate, a second patterned quantum dot photocuring glue layer, a second packaging glue layer, a third dielectric substrate, a third patterned quantum dot photocuring glue layer and a third packaging glue layer which are stacked on the first dielectric substrate in the light transmitting area, wherein the first patterned quantum dot photocuring glue layer, the second patterned quantum dot photocuring glue layer and the third patterned quantum dot photocuring glue layer are vertically projected on the first water oxygen barrier layer in a non-overlapping mode, and the first patterned quantum dot photocuring glue layer, the second patterned quantum dot photocuring glue layer and the third patterned quantum dot photocuring glue layer are respectively any one of a red light patterned quantum dot photocuring glue layer, a green light patterned quantum dot photocuring glue layer and a blue light patterned quantum dot photocuring glue layer and are different from one another.
And S460, forming a second water oxygen barrier layer on the third packaging adhesive layer.
According to the technical scheme provided by the embodiment, the ultraviolet backlight module and the first medium substrate are arranged, the first water oxygen blocking layer is formed on the first medium substrate, the first water oxygen blocking layer is installed on the light-emitting surface of the ultraviolet backlight module, the strip-shaped retaining wall structures are formed on one side, away from the ultraviolet backlight module, of the first medium substrate, the retaining wall structures extend along the first direction and are arranged along the second direction, the second direction is perpendicular to the first direction, gaps between adjacent retaining wall structures form a light transmission area, a first patterned quantum dot light curing adhesive layer, a first packaging adhesive layer, a second medium substrate, a second patterned quantum dot light curing adhesive layer, a second packaging adhesive layer, a third medium substrate, a third patterned quantum dot light curing adhesive layer and a third packaging adhesive layer are sequentially formed on the first medium substrate in the light transmission area in a stacking mode, the first patterned quantum dot light curing adhesive layer, the second packaging adhesive layer, the third patterned quantum dot light curing adhesive layer and the third packaging adhesive layer are sequentially formed on the first medium substrate, The vertical projection of the second patterned quantum dot light-cured adhesive layer and the vertical projection of the third patterned quantum dot light-cured adhesive layer on the first water oxygen blocking layer are not overlapped, the first patterned quantum dot light-cured adhesive layer, the second patterned quantum dot light-cured adhesive layer and the third patterned quantum dot light-cured adhesive layer are respectively any one of a red light patterned quantum dot light-cured adhesive layer, a green light patterned quantum dot light-cured adhesive layer and a blue light patterned quantum dot light-cured adhesive layer, and are different, a color filter is not used, the luminous efficiency is improved, and the red, green and blue quantum dots are arranged in different layers, the quantum dots cannot interfere with each other, the light emitting performance of the display panel is improved, and the display panel is compatible with various backlight sources, so that the application field of the display panel is widened.
Fig. 5 is a schematic view illustrating a process of forming a retaining wall structure according to an embodiment of the present invention. As shown in fig. 5, an ultraviolet backlight module 10 and a first dielectric substrate 13 are provided.
Specifically, with reference to fig. 5, a layer of water and oxygen barrier material is deposited on the lower surface of the first dielectric substrate 13 by a deposition method to form the first water and oxygen barrier layer 12, so that moisture and oxygen can be prevented from entering the quantum dot color film lamination structure during effective light emission to degrade the device.
Optionally, referring to fig. 5, the retaining wall material adhesive film 141 is coated on the first dielectric base material, the light source in the light transmitting region Aa in the ultraviolet light backlight module 10 is controlled to emit ultraviolet light, so as to dissolve the retaining wall material adhesive film 141 in the corresponding region, and the dissolved retaining wall material adhesive film 141 is removed, so as to form a plurality of strip-shaped retaining wall structures 14.
It should be noted that the barrier structure is made of a light-tight material, so as to separate adjacent pixel structure units to avoid the optical crosstalk phenomenon, and the material of the barrier structure is not limited herein as long as the barrier structure has the function of blocking light.
Specifically, fig. 6 is a schematic diagram of a process for preparing a patterned quantum dot photo-curing adhesive layer according to an embodiment of the present invention. As shown in fig. 6, after the retaining wall structure is formed, that is, on the basis of fig. 5, the spraying method is continuously used to spray red light quantum dot photocuring glue 151 on the first dielectric substrate 13, open the ultraviolet excitation unit 1021 corresponding to the red quantum dot in the first patterned quantum dot photocuring glue layer, so that the red light quantum dot 151 right above the red light quantum dot is cured, and clean the red light quantum dot photocuring glue irradiated by the un-opened ultraviolet excitation unit, thereby obtaining a first patterned quantum dot photocuring glue layer 15, that is, a red light patterned quantum dot photocuring glue layer, next coating the packaging glue 16 on the first patterned quantum dot photocuring glue layer 15, obtaining a first packaging glue layer 16 after heating and curing, and continuously heating and curing the first packaging glue layer 16 to obtain a second dielectric substrate 17, and the same preparation method is used to prepare a second patterned quantum dot photocuring glue layer 18 through lamination, The second encapsulating adhesive layer 19, the third dielectric substrate 20, the third patterned quantum dot photo-curing adhesive layer 21, and the third encapsulating adhesive layer 22, and the preparation method of each patterned quantum dot photo-curing adhesive layer is the same, which is not described herein again.
It should be noted that, the encapsulation glue layer can be filled by the whole layer of encapsulation glue, and can play dustproof, waterproof, heat dissipation etc. effect, and common encapsulation glue mainly includes epoxy class encapsulation glue, organosilicon class encapsulation glue, polyurethane encapsulation glue and ultraviolet ray photocuring encapsulation glue, and in this embodiment, in order to cooperate ultraviolet ray backlight unit to arouse the ultraviolet ray, the encapsulation glue in the encapsulation glue layer can use ultraviolet ray photocuring encapsulation glue.
Fig. 7 is a schematic view of a process for forming a water-oxygen barrier layer according to an embodiment of the present invention. As shown in fig. 7, a layer of water-oxygen barrier material is deposited on the upper surface of the third encapsulant layer 22 to form a second water-oxygen barrier layer 23, so that the second water-oxygen barrier layer 23 and the first water-oxygen barrier layer 12 are respectively disposed above and below the quantum dot color film stack.
Optionally, fig. 8 is a schematic view of a process of forming an ultraviolet reflecting layer according to an embodiment of the present invention. As shown in fig. 8, before forming the second water oxygen barrier layer on the third encapsulating adhesive layer 22, the method further includes: an ultraviolet light reflecting layer 24 is formed on the third encapsulation layer 22.
Accordingly, an ultraviolet reflecting layer 24 is formed on the third encapsulating adhesive layer 22, and then a second water and oxygen barrier layer is formed on the ultraviolet reflecting layer, so that the structure shown in fig. 1 is obtained.
Fig. 9 is a schematic flow chart of forming a quantum dot color film stack according to an embodiment of the present invention. On the basis of the above embodiment, a specific method for sequentially forming a first patterned quantum dot photocuring glue layer, a first packaging glue layer, a second dielectric substrate, a second patterned quantum dot photocuring glue layer, a second packaging glue layer, a third dielectric substrate, a third patterned quantum dot photocuring glue layer and a third packaging glue layer, which are stacked on a first dielectric substrate in a light-transmitting region, includes the following steps:
s910, preparing quantum dot gel, coating the quantum dot gel on the medium base material in the light transmission area, controlling the ultraviolet light backlight module to emit patterned ultraviolet light, so as to solidify the quantum dot gel in the corresponding area, and removing the uncured quantum dot gel, so as to form a patterned quantum dot photocuring glue layer.
Optionally, preparing the quantum dot gel comprises: the preparation method comprises the steps of preparing a quantum dot solution by a solution method, adding a glue monomer into the quantum dot solution to form a glue mixed solution, adding an ultraviolet initiator into the glue mixed solution, and stirring to form quantum dot gel.
Optionally, the specific method for preparing the quantum dot solution by the solution method comprises the following steps: the method comprises the steps of preparing a quantum dot core material solution through a solution method, adding a coating layer material into the quantum dot core material to form a core-shell structure quantum dot material solution, adding a surface ligand material solution into the core-shell structure quantum dot material solution, and obtaining the quantum dot solution through centrifugation and purification treatment.
Specifically, the quantum dot solution is prepared by a solution method, and may include a metal organic synthesis method, a water phase direct synthesis method, a thermal injection synthesis method, an anti-solvent synthesis method, and the like. Among them, the solution method is a growing method in which a precipitate is separated from its solution to form a crystal.
Optionally, the quantum dot core material solution comprises A x M y E z The system, wherein, the element A is one of Ba, Ag, Na, Fe, In, Cd, Zn, Ga, Mg, Pb and Cs, the element M is one of S, Cl, O, As, N, P, Se, Te, Ti, Zr and Pb, and the element E is one of S, As, Se, O, Cl, Br and I.
Optionally, the value range of x is 0.3-2, the value range of y is 0.5-3, and the value range of z is 0-4.
The quantum dot core material can emit excitation fluorescence with specific wavelength when excited by an ultraviolet light source, and the emitted fluorescence spectrum is determined by the chemical composition and the particle size of the quantum dot core material. Due to the quantum size effect, the fluorescence spectrum emitted by the material with the same chemical composition is red-shifted from blue light to green light and then to red light along with the increase of the particle size of the quantum dot core material. The adopted quantum dot core material for emitting red light, the quantum dot core material for emitting green light and the quantum dot core material for emitting blue light can be the same chemical composition, but the value ranges of x, y and z are adjusted, so that the quantum dot core materials with different particle sizes are synthesized, and the quantum dot core materials with different chemical compositions can also be adopted.
Optionally, the quantum dot core material solution comprises a composite of one or at least two of CdSe, InP and CsPbBr 3.
Illustratively, for cadmium selenide (CdSe) quantum dots, the color of light emitted by the cadmium selenide quantum dots changes from red to blue as it decreases from ion to ion at 2nm, and blue light is emitted when the size of the cadmium selenide quantum dots is greater than or equal to 2nm and less than 5 nm; emitting green light when the size of the cadmium selenide quantum dots is greater than or equal to 5nm and less than 8 nm; and emitting red light when the size of the cadmium selenide quantum dots is larger than or equal to 8nm and smaller than lOnm. For perovskite quantum dots (CsPbX3(X ═ Cl, Br, I)), by adjusting the difference in halogen elements, quantum dot core materials formed of different chemical groups are formed, resulting in different colors of light emission.
Optionally, the coating material includes organic polymer solution, inorganic oxide, metal simple substance, alloy material, or a combination of multiple materials.
The coating material can be CdS, ZnSe, ZnCdS2, ZnS, PbS, Zn0, Al2O3, SiO2, simple substance of Au, simple substance of Ag, simple substance of Cu, etc.
And coating the quantum dot material with the coating material under the conditions of pH regulation, reaction temperature, reaction time and the like to form the quantum dot material with the core-shell structure.
It should be noted that the surface ligand material may be a high molecular polymer, and has a better compatibility with the glue monomer. The surface ligand material reacts with and bonds together with the quantum dot shell material.
It should be noted that the UV initiator is a compound that absorbs energy with a certain wavelength in the UV region to generate free radicals, cations, etc. to initiate polymerization, crosslinking, and curing of the monomer, and may be, for example, a UV coating, a UV ink, etc. And adding an ultraviolet initiator into the glue mixed solution and stirring the ultraviolet initiator to obtain the quantum dot light-cured glue. And S420, forming a first packaging adhesive layer on the first patterned quantum dot photocuring adhesive layer.
S920, forming a first packaging adhesive layer on the first patterned quantum dot light curing adhesive layer.
And S930, forming a second patterned quantum dot photocuring adhesive layer on the first packaging adhesive layer by adopting the method for forming the first patterned quantum dot photocuring adhesive layer in the step 1.
And S940, forming a second packaging adhesive layer on the second patterned quantum dot light curing adhesive layer.
And S950, forming a third patterned quantum dot light-cured adhesive layer on the second packaging adhesive layer by adopting the method for forming the first patterned quantum dot light-cured adhesive layer in the step 1.
And S960, forming a third packaging adhesive layer on the third patterned quantum dot light curing adhesive layer.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (14)
1. A quantum dot display panel, comprising:
the device comprises an ultraviolet light backlight module and a quantum dot color film laminated structure positioned on a light-emitting surface of the ultraviolet light backlight module;
wherein, the quantum dot color film laminated structure comprises:
the first water and oxygen blocking layer is positioned on the light-emitting surface of the ultraviolet light backlight module;
a first dielectric substrate on the first water oxygen barrier layer;
the light-transmitting structure comprises a plurality of strip-shaped retaining wall structures, a first medium base material and a second medium base material, wherein the retaining wall structures extend along a first direction and are arranged along a second direction, the second direction is perpendicular to the first direction, and gaps between every two adjacent retaining wall structures form a light-transmitting area;
the first patterned quantum dot light-cured adhesive layer, the second packaging adhesive layer, the third patterned quantum dot light-cured adhesive layer and the third packaging adhesive layer are sequentially stacked on the first patterned quantum dot light-cured adhesive layer in the light-transmitting area; the vertical projections of the first patterned quantum dot light-cured adhesive layer, the second patterned quantum dot light-cured adhesive layer and the third patterned quantum dot light-cured adhesive layer on the first water-oxygen barrier layer are not overlapped; the first patterned quantum dot photocuring adhesive layer, the second patterned quantum dot photocuring adhesive layer and the third patterned quantum dot photocuring adhesive layer are any one of a red light patterned quantum dot photocuring adhesive layer, a green light patterned quantum dot photocuring adhesive layer and a blue light patterned quantum dot photocuring adhesive layer and are different from each other;
a second water and oxygen barrier layer positioned on the third packaging adhesive layer;
the first patterned quantum dot photocuring adhesive layer, the second patterned quantum dot photocuring adhesive layer and the third patterned quantum dot photocuring adhesive layer are arranged according to the wavelength of quantum dots;
the first patterned quantum dot light-cured adhesive layer is a red light patterned quantum dot light-cured adhesive layer, the second patterned quantum dot light-cured adhesive layer is a green light patterned quantum dot light-cured adhesive layer, and the third patterned quantum dot light-cured adhesive layer is a blue light patterned quantum dot light-cured adhesive layer.
2. The quantum dot display panel according to claim 1, further comprising an ultraviolet reflecting layer between the third encapsulating adhesive layer and the second water oxygen barrier layer in the light transmitting region.
3. The quantum dot display panel according to claim 1, wherein the first patterned quantum dot photo-curing glue layer comprises a plurality of stripe-shaped first quantum dot gel layers extending along a first direction and arranged along a second direction, the second patterned quantum dot photo-curing glue layer comprises a plurality of stripe-shaped second quantum dot gel layers extending along the first direction and arranged along the second direction, and the third patterned quantum dot photo-curing glue layer comprises a plurality of stripe-shaped third quantum dot gel layers extending along the first direction and arranged along the second direction;
and a first quantum dot gel layer, a second quantum dot gel layer and a third quantum dot gel layer are arranged in the light-transmitting area between the retaining wall structures.
4. The quantum dot display panel according to claim 1, wherein the first patterned quantum dot photo-curing glue layer comprises a plurality of first quantum dot gel columns extending along a first direction and arranged along a second direction, the first quantum dot gel columns comprising a plurality of the first quantum dot gel blocks arranged along the first direction; the second patterned quantum dot light-cured glue layer comprises a plurality of second quantum dot gel columns extending along a second direction and arranged along the second direction, and the second quantum dot gel columns comprise a plurality of second quantum dot gel blocks arranged along the second direction; the third patterned quantum dot light-cured glue layer comprises a plurality of third quantum dot gel columns which extend along a third direction and are arranged along a second direction, and the third quantum dot gel columns comprise a plurality of third quantum dot gel blocks which are arranged along the third direction;
and a first quantum dot gel column, a second quantum dot gel column and a third quantum dot gel column are arranged in the light-transmitting region between any adjacent retaining wall structures.
5. A preparation method of a quantum dot display panel is characterized by comprising the following steps:
providing an ultraviolet backlight module and a first medium substrate;
forming a first water oxygen barrier layer on a first medium substrate;
installing the first water and oxygen blocking layer on a light-emitting surface of the ultraviolet light backlight module;
forming a plurality of strip-shaped retaining wall structures on one side of the first medium base material, which is far away from the ultraviolet light backlight module, wherein the retaining wall structures extend along a first direction and are arranged along a second direction, the second direction is perpendicular to the first direction, and gaps between adjacent retaining wall structures form a light-transmitting area;
sequentially forming a first patterned quantum dot photocuring glue layer, a first packaging glue layer, a second dielectric substrate, a second patterned quantum dot photocuring glue layer, a second packaging glue layer, a third dielectric substrate, a third patterned quantum dot photocuring glue layer and a third packaging glue layer which are stacked on the first dielectric substrate in the light-transmitting area; the vertical projections of the first patterned quantum dot light-cured adhesive layer, the second patterned quantum dot light-cured adhesive layer and the third patterned quantum dot light-cured adhesive layer on the first water-oxygen barrier layer are not overlapped; the first patterned quantum dot photocuring adhesive layer, the second patterned quantum dot photocuring adhesive layer and the third patterned quantum dot photocuring adhesive layer are any one of a red light patterned quantum dot photocuring adhesive layer, a green light patterned quantum dot photocuring adhesive layer and a blue light patterned quantum dot photocuring adhesive layer and are different from each other;
forming a second water oxygen barrier layer on the third packaging adhesive layer;
the first patterned quantum dot photocuring adhesive layer, the second patterned quantum dot photocuring adhesive layer and the third patterned quantum dot photocuring adhesive layer are arranged according to the wavelength of quantum dots;
the first patterned quantum dot light-cured adhesive layer is a red light patterned quantum dot light-cured adhesive layer, the second patterned quantum dot light-cured adhesive layer is a green light patterned quantum dot light-cured adhesive layer, and the third patterned quantum dot light-cured adhesive layer is a blue light patterned quantum dot light-cured adhesive layer.
6. The method according to claim 5, further comprising, before forming the second water oxygen barrier layer on the third encapsulating adhesive layer:
and forming an ultraviolet reflection layer on the third packaging adhesive layer.
7. The method for preparing the solar cell module according to claim 5, wherein the sequentially forming a first patterned quantum dot photo-curing glue layer, a first packaging glue layer, a second dielectric substrate, a second patterned quantum dot photo-curing glue layer, a second packaging glue layer, a third dielectric substrate, a third patterned quantum dot photo-curing glue layer and a third packaging glue layer on the first dielectric substrate in the light-transmitting region comprises:
s1, preparing quantum dot gel;
coating quantum dot gel on the medium substrate in the light transmission area;
controlling the ultraviolet light backlight module to emit patterned ultraviolet light so as to solidify the quantum dot gel in the corresponding region;
removing the uncured quantum dot gel to form the first patterned quantum dot photocuring glue layer;
s2, forming a first packaging adhesive layer on the first patterning quantum dot photocuring adhesive layer;
s3, forming the second patterned quantum dot light-cured adhesive layer on the first packaging adhesive layer by adopting the method for forming the first patterned quantum dot light-cured adhesive layer in the S1;
s4, forming a second packaging adhesive layer on the second patterned quantum dot light curing adhesive layer;
s5, forming the third patterned quantum dot light-cured adhesive layer on the second packaging adhesive layer by adopting the method for forming the first patterned quantum dot light-cured adhesive layer in the S1;
and S6, forming a third packaging adhesive layer on the third patterning quantum dot light curing adhesive layer.
8. The method of claim 7, wherein preparing the quantum dot gel comprises:
s1, preparing a quantum dot solution by a solution method;
s2, adding glue monomers into the quantum dot solution to form a glue mixed solution;
and S3, adding an ultraviolet initiator into the glue mixed liquid, and stirring to form the quantum dot gel.
9. The method of manufacturing a quantum dot display panel according to claim 8, wherein the preparing a quantum dot solution by a solution method includes:
s11, preparing a quantum dot core material solution by a solution method;
s12, adding a coating layer material into the quantum dot core material to form a core-shell structure quantum dot material solution;
s13, adding a surface ligand material solution into the core-shell structure quantum dot material solution;
and S14, obtaining the quantum dot solution through centrifugation and purification treatment.
10. The method of claim 9, wherein the quantum dot core material solution comprises A x M y E z A system; wherein, the element A is one of Ba, Ag, Na, Fe, In, Cd, Zn, Ga, Mg, Pb and Cs, the element M is one of S, Cl, O, As, N, P, Se, Te, Ti, Zr and Pb, and the element E is one of S, As, Se, O, Cl, Br and I.
11. The method for manufacturing the quantum dot display panel according to claim 10, wherein x is 0.3-2, y is 0.5-3, and z is 0-4.
12. The method of claim 10, wherein the quantum dot core material solution comprises a composite of one or at least two of CdSe, InP and CsPbBr 3.
13. The method of claim 10, wherein the cladding material comprises organic polymer solution, inorganic oxide, metal simple substance, alloy material, or a combination thereof.
14. The method as claimed in claim 5, wherein forming a plurality of strip-shaped retaining wall structures on a side of the first dielectric substrate away from the UV backlight module comprises:
coating a retaining wall material adhesive film on the first medium base material;
controlling a light source in the ultraviolet light backlight module, which is positioned in the light-transmitting area, to emit ultraviolet light so as to dissolve the retaining wall material adhesive film in the corresponding area;
and removing the dissolved retaining wall material adhesive film to form a plurality of strip-shaped retaining wall structures.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103091895A (en) * | 2013-01-22 | 2013-05-08 | 北京京东方光电科技有限公司 | Display device and manufacturing method thereof |
| CN108022951A (en) * | 2016-10-31 | 2018-05-11 | 乐金显示有限公司 | Organic light-emitting display device |
| CN108288640A (en) * | 2018-01-31 | 2018-07-17 | 武汉华星光电半导体显示技术有限公司 | OLED display and preparation method thereof |
| CN208970563U (en) * | 2018-11-30 | 2019-06-11 | 昆山工研院新型平板显示技术中心有限公司 | A kind of display panel and display device |
| CN110224012A (en) * | 2019-06-18 | 2019-09-10 | 京东方科技集团股份有限公司 | Display panel and display device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI221678B (en) * | 2003-04-04 | 2004-10-01 | Toppoly Optoelectronics Corp | Method of forming sealing structure for electroluminescent organic device |
| US8947619B2 (en) * | 2006-07-06 | 2015-02-03 | Intematix Corporation | Photoluminescence color display comprising quantum dots material and a wavelength selective filter that allows passage of excitation radiation and prevents passage of light generated by photoluminescence materials |
| US9545000B2 (en) * | 2013-03-05 | 2017-01-10 | Eastman Kodak Company | Stacked large-format imprinted structure |
| CN203930105U (en) * | 2014-06-26 | 2014-11-05 | 京东方科技集团股份有限公司 | Flexible membrane, organic LED display panel and display device |
| EP3274765A4 (en) * | 2015-03-23 | 2018-10-17 | Intematix Corporation | Photoluminescence color display |
| KR20180090421A (en) * | 2017-02-02 | 2018-08-13 | 삼성디스플레이 주식회사 | Organic light emitting display device |
| US10490777B2 (en) * | 2018-01-31 | 2019-11-26 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | OLED display and manufacturing method thereof |
| CN109166876B (en) * | 2018-09-12 | 2021-01-26 | 京东方科技集团股份有限公司 | Micro-display device and preparation method thereof |
-
2020
- 2020-12-25 CN CN202011563423.6A patent/CN112701234B/en active Active
-
2021
- 2021-03-23 WO PCT/CN2021/082449 patent/WO2022134334A1/en unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103091895A (en) * | 2013-01-22 | 2013-05-08 | 北京京东方光电科技有限公司 | Display device and manufacturing method thereof |
| CN108022951A (en) * | 2016-10-31 | 2018-05-11 | 乐金显示有限公司 | Organic light-emitting display device |
| CN108288640A (en) * | 2018-01-31 | 2018-07-17 | 武汉华星光电半导体显示技术有限公司 | OLED display and preparation method thereof |
| CN208970563U (en) * | 2018-11-30 | 2019-06-11 | 昆山工研院新型平板显示技术中心有限公司 | A kind of display panel and display device |
| CN110224012A (en) * | 2019-06-18 | 2019-09-10 | 京东方科技集团股份有限公司 | Display panel and display device |
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Inventor after: Zhang Zhikuan Inventor after: Gao Danpeng Inventor after: Yang Limin Inventor after: Xu Bing Inventor before: Zhang Zhikuan Inventor before: Gao Danpeng Inventor before: Yang Limin Inventor before: Xu Bing Inventor before: Sun Xiaowei |