CN112666748A - Preparation method of quantum dot display panel and quantum dot display panel - Google Patents
Preparation method of quantum dot display panel and quantum dot display panel Download PDFInfo
- Publication number
- CN112666748A CN112666748A CN202011563844.9A CN202011563844A CN112666748A CN 112666748 A CN112666748 A CN 112666748A CN 202011563844 A CN202011563844 A CN 202011563844A CN 112666748 A CN112666748 A CN 112666748A
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- color film
- film structure
- dot color
- patterned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 344
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000003292 glue Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 33
- 238000007639 printing Methods 0.000 claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 69
- 239000000243 solution Substances 0.000 claims description 47
- 239000011162 core material Substances 0.000 claims description 23
- 238000002955 isolation Methods 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 238000004806 packaging method and process Methods 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000001723 curing Methods 0.000 claims description 8
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052801 chlorine Inorganic materials 0.000 claims description 7
- 239000011258 core-shell material Substances 0.000 claims description 7
- 239000011241 protective layer Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- 229910052745 lead Inorganic materials 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 6
- 239000000178 monomer Substances 0.000 claims description 6
- 229910052717 sulfur Inorganic materials 0.000 claims description 6
- 239000003446 ligand Substances 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052794 bromium Inorganic materials 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 229910052740 iodine Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- 229910052792 caesium Inorganic materials 0.000 claims description 3
- 238000005119 centrifugation Methods 0.000 claims description 3
- 239000011247 coating layer Substances 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229920000620 organic polymer Polymers 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 238000000746 purification Methods 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims 3
- 238000005253 cladding Methods 0.000 claims 1
- 239000002699 waste material Substances 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000003475 lamination Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 238000007650 screen-printing Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000002189 fluorescence spectrum Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- OLPZCIDHOZATMA-UHFFFAOYSA-N 2,2-dioxooxathiiran-3-one Chemical class O=C1OS1(=O)=O OLPZCIDHOZATMA-UHFFFAOYSA-N 0.000 description 1
- 239000007848 Bronsted acid Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 150000001241 acetals Chemical class 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- 239000012952 cationic photoinitiator Substances 0.000 description 1
- 238000010538 cationic polymerization reaction Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 125000003636 chemical group Chemical group 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 125000005520 diaryliodonium group Chemical group 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- 150000001989 diazonium salts Chemical class 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052949 galena Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- -1 iron arene salts Chemical class 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000029219 regulation of pH Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000011257 shell material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 125000005409 triarylsulfonium group Chemical group 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Images
Landscapes
- Optical Filters (AREA)
Abstract
The embodiment of the invention discloses a quantum dot display panel and a preparation method thereof. The method comprises the steps that a patterned printing silk screen is arranged on a base material, quantum glue dispensing water is coated on the patterned printing silk screen, and a red light patterned quantum dot color film structure containing a plurality of red light pixels, a green light patterned quantum dot color film structure containing a plurality of green light pixels and a blue light patterned quantum dot color film structure containing a plurality of blue light pixels which are arranged in a laminated mode are formed respectively; each adjacent red sub-pixel, green sub-pixel and blue sub-pixel form a pixel unit; forming a shading retaining wall between adjacent pixel units; an ultraviolet backlight module is provided for exciting red, green and blue light patterned quantum dot color film structures to realize full-color display. Meanwhile, the first ultraviolet reflection layer and the second ultraviolet reflection layer are arranged, redundant ultraviolet light is reflected to continuously excite the red, green and blue light patterned quantum dot color film structure, waste of ultraviolet light is avoided, and therefore the luminous efficiency of the device is improved.
Description
Technical Field
The embodiment of the invention relates to a quantum dot display panel technology, in particular to a preparation method of a quantum dot display panel and the quantum dot display panel.
Background
The particle size of a Quantum Dot (QD) material is generally between 1 nm and 10nm, and because electrons and holes are limited by quanta, a continuous energy band structure is changed into a discrete energy level structure, so that the emission spectrum is very narrow (20-30nm), the chromaticity is high, the display color gamut is wide, and the display color gamut can greatly exceed the color gamut range of NTSC (more than 100%); meanwhile, the light absorption loss of the color filter is small, and low-power-consumption display can be realized. Due to its special characteristics, quantum dots are emerging as a new generation of luminescent materials in LED display applications.
The quantum dot color film is a key component of a display device for realizing ultrahigh color gamut full-color display, and in the prior art, red and green quantum dots are mixed together to form a quantum dot color conversion film, and then the quantum dot color conversion film is matched with a liquid crystal display module and a blue light LED light source to realize high color gamut display. However, this solution has the following problems: 1) the red, green and blue lights after color conversion need to be filtered by a color filter, and the luminous efficiency is extremely low; 2) the red quantum dots and the green quantum dots are directly mixed, and the two quantum dots can mutually influence in the preparation and use processes of the diaphragm, so that the performance is deteriorated, and the reliability of the diaphragm is poor; 3) the application field is limited, and the active light-emitting Micro-LED and OLED display device can not be matched for use.
Disclosure of Invention
The embodiment of the invention provides a preparation method of a quantum dot display panel and the quantum dot display panel, which are used for solving the problems that in the prior art, a color filter is required to be used for filtering red, green and blue light after color conversion, and the luminous efficiency is low; the red quantum dots and the green quantum dots are directly mixed, so that the reliability of the diaphragm is poor; can not match the use of Micro-LED and OLED display devices of active light emitting type.
In a first aspect, an embodiment of the present invention provides a method for manufacturing a quantum dot display panel, including:
s1, providing a base material, arranging a patterned printing silk screen on the base material, and coating quantum glue dispensing water on the patterned printing silk screen;
s2, curing and removing the patterned printing screen to form a patterned quantum dot layer;
s3, preparing a packaging protective layer on the patterned quantum dot layer to form a patterned quantum dot color film structure;
s4, sequentially forming a red light patterned quantum dot color film structure, a green light patterned quantum dot color film structure and a blue light patterned quantum dot color film structure by respectively adopting S1-S3;
s5, stacking a red light patterned quantum dot color film structure, a green light patterned quantum dot color film structure, and a blue light patterned quantum dot color film structure, wherein the green light patterned quantum dot color film structure is located between the red light patterned quantum dot color film structure and the blue light patterned quantum dot color film structure; the red light patterned quantum dot color film structure comprises a plurality of red photon pixels; the green light patterned quantum dot color film structure comprises a plurality of green photon pixels; the blue light patterned quantum dot color film structure comprises a plurality of blue photon pixels; each adjacent red sub-pixel, green sub-pixel and blue sub-pixel form a pixel unit;
s6, forming light shielding retaining walls between adjacent pixel units;
s7, providing an ultraviolet light backlight module, and arranging the ultraviolet light backlight module at one side of the red light patterned quantum dot color film structure, which is far away from the green light patterned quantum dot color film structure;
s8, arranging a first ultraviolet reflection layer on one side, away from the green light patterned quantum dot color film structure, of the blue light patterned quantum dot color film structure; arranging a second ultraviolet reflection layer on one side of the ultraviolet backlight module, which is far away from the red light patterned quantum dot color film structure;
the patterned quantum dot layer in the red light patterned quantum dot color film structure, the patterned quantum dot layer in the green light patterned quantum dot color film structure and the patterned quantum dot layer in the blue light patterned quantum dot color film structure are not overlapped in vertical projection on the base material.
Optionally, before S1, the method further includes:
s01, preparing a quantum dot core material solution by a solution method;
s02, adding a coating layer material into the quantum dot core material to form a core-shell structure quantum dot material solution;
s03, adding a surface ligand material solution into the core-shell structure quantum dot material solution;
and S04, obtaining the quantum dot solution through centrifugation and purification treatment.
S05, preparing a quantum dot solution by a solution method;
s06, adding glue monomers into the quantum dot solution to form a glue mixed solution;
s07, adding a photoinitiator into the glue mixed solution to form quantum dot glue;
and S08, respectively and sequentially adopting S01 to S07 to form red light quantum dot glue, green light quantum dot glue and blue light quantum dot glue.
Optionally, the quantum dot core material solution comprises an AxMyEz system; wherein, the element A is one of Ba, Ag, Na, Fe, In, Cd, Zn, Ga, Mg, Pb and Cs, the element M is one of S, Cl, O, As, N, P, Se, Te, Ti, Zr and Pb, and the element E is one of S, As, Se, O, Cl, Br and I.
Optionally, the value range of x is 0.3-2, the value range of y is 0.5-3, and the value range of z is 0-4.
Optionally, the quantum dot core material solution includes a composite of one or at least two of CdSe, InP, and CsPbBr 3.
Optionally, the coating material includes at least one of an organic polymer solution, an inorganic oxide, a metal simple substance, and an alloy material.
Optionally, the method further includes:
forming a first isolation film on one side of the red light patterned quantum dot color film structure, which is far away from the green light patterned quantum dot color film structure;
and forming a second isolating film on one side of the blue light patterned quantum dot color film structure, which is far away from the green light patterned quantum dot color film structure.
Optionally, the first isolation film and/or the second isolation film includes at least one of Al2O3, ZrO2, TiO2, Fe2O3, and ZnO 2.
Optionally, the thickness of the first isolation film and/or the second isolation film ranges from 3nm to 50 nm.
In a second aspect, an embodiment of the present invention further provides a quantum dot display panel, including:
an ultraviolet light backlight module;
the quantum dot color film laminated structure is positioned on the light-emitting surface of the ultraviolet light backlight module; the quantum dot color film laminated structure comprises a red light patterned quantum dot color film structure, a green light patterned quantum dot color film structure and a blue light patterned quantum dot color film structure which are sequentially laminated away from the ultraviolet backlight module;
the first ultraviolet reflection layer is positioned on one side, away from the ultraviolet backlight module, of the quantum dot color film laminated structure; the second ultraviolet reflection layer is positioned on one side, away from the quantum dot color film laminated structure, of the ultraviolet backlight module;
the patterned quantum dot layer in the red light patterned quantum dot color film structure, the patterned quantum dot layer in the green light patterned quantum dot color film structure and the patterned quantum dot layer in the blue light patterned quantum dot color film structure are not overlapped in vertical projection on the planar substrate where the ultraviolet light backlight module is located; the red light patterned quantum dot color film structure comprises a plurality of red photon pixels; the green light patterned quantum dot color film structure comprises a plurality of green photon pixels; the blue light patterned quantum dot color film structure comprises a plurality of blue photon pixels; each adjacent red sub-pixel, green sub-pixel and blue sub-pixel form a pixel unit; and a shading retaining wall is arranged between the adjacent pixel units.
According to the embodiment of the invention, the patterned printing silk screen is arranged on the base material, and quantum glue dispensing water is coated on the patterned printing silk screen; curing and removing the patterned printing silk screen to form a patterned quantum dot layer; preparing a packaging protective layer, and forming a red light patterned quantum dot color film structure, a green light patterned quantum dot color film structure and a blue light patterned quantum dot color film structure which are arranged in a stacked manner; the green light patterned quantum dot color film structure is positioned between the red light patterned quantum dot color film structure and the blue light patterned quantum dot color film structure; the patterned quantum dot color film structure of the red light, green light and blue light comprises a plurality of red light sub-pixels, green light sub-pixels and blue light sub-pixels, and each adjacent red light sub-pixel, green light sub-pixel and blue light sub-pixel form a pixel unit; forming a shading retaining wall between adjacent pixel units; the ultraviolet backlight module is provided for emitting ultraviolet to excite red, green and blue sub-pixels, and excessive ultraviolet passing through the red, green and blue sub-pixels can be reflected by the first ultraviolet reflecting layer and the second ultraviolet reflecting layer, so that redundant ultraviolet is reflected to continue exciting the red, green and blue sub-pixels, the waste of ultraviolet is avoided, and the luminous efficiency of the device is improved.
Drawings
Fig. 1 is a schematic flow chart of a method for manufacturing a quantum dot display panel according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of a method for preparing a quantum dot solution according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a screen printing method according to an embodiment of the present invention;
fig. 4 is a schematic view of a quantum dot color film lamination structure according to an embodiment of the present invention;
fig. 5 is a schematic top view of a quantum dot color film stacked structure according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a quantum dot display panel according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a schematic flow chart of a method for manufacturing a quantum dot display panel according to an embodiment of the present invention, where the method specifically includes the following steps:
s1, providing a base material, arranging a patterned printing silk screen on the base material, and coating quantum glue dispensing water on the patterned printing silk screen;
fig. 2 is a schematic flow chart of a preparation method of a quantum dot solution according to an embodiment of the present invention, referring to fig. 2, optionally, the quantum dot solution may be prepared by the following method:
optionally, before S1, the method further includes:
s01, preparing a quantum dot core material solution by a solution method;
optionally, the quantum dot core material solution comprises an AxMyEz system; wherein, the element A is one of Ba, Ag, Na, Fe, In, Cd, Zn, Ga, Mg, Pb and Cs, the element M is one of S, Cl, O, As, N, P, Se, Te, Ti, Zr and Pb, and the element E is one of S, As, Se, O, Cl, Br and I.
Optionally, the value range of x is 0.3-2, the value range of y is 0.5-3, and the value range of z is 0-4.
When the quantum dot core material is excited by a blue light source, excitation fluorescence with specific wavelength can be emitted, and the emitted fluorescence spectrum is determined by the chemical composition and the particle size of the quantum dot core material. Due to quantum size effect, the fluorescence spectrum emitted by the material with the same chemical composition is red-shifted from green light to red light along with the increase of the particle size of the quantum dot core material. The adopted quantum dot core material for emitting red light and the quantum dot core material for emitting green light can be the same chemical composition, but the value ranges of x, y and z are adjusted, so that the quantum dot core materials with different particle sizes are synthesized, and can also be the quantum dot core materials with different chemical compositions, and the size of the red light quantum dot core material is 7-12 nm; the size of the green light quantum dot core material is 3-7 nm; the size of the blue light quantum dot core material is 1-3 nm.
Optionally, the quantum dot core material solution comprises a composite of one or at least two of CdSe, InP and CsPbBr 3.
Among them, the smaller the size of the quantum dot is, the more remarkable the blue shift phenomenon is due to the unique light emitting characteristics of the quantum dot. For example, for a cadmium selenide (CdSe) quantum dot, the color of light emitted by the cadmium selenide quantum dot changes from red to blue as it decreases from ion to 2nm, and blue light is emitted when the size of the cadmium selenide quantum dot is greater than or equal to 2nm and less than 5 nm; emitting green light when the size of the cadmium selenide quantum dots is greater than or equal to 5nm and less than 8 nm; and emitting red light when the size of the cadmium selenide quantum dots is larger than or equal to 8nm and smaller than lOnm. For perovskite quantum dots (CsPbX3(X ═ Cl, Br, I)), by adjusting the difference in halogen elements, quantum dot core materials formed of different chemical groups are formed, resulting in different colors of light emission.
S02, adding a coating layer material into the quantum dot core material to form a core-shell structure quantum dot material solution;
optionally, the coating material includes at least one of an organic polymer solution, an inorganic oxide, a metal simple substance, and an alloy material.
The coating material can be CdS, ZnSe, ZnCdS2, ZnS, PbS, Zn0, Al2O3, SiO2, simple substance of Au, simple substance of Ag, simple substance of Cu, etc.
And coating the quantum dot material with the coating material under the conditions of pH regulation, reaction temperature, reaction time and the like to form the quantum dot material with the core-shell structure.
S03, adding a surface ligand material solution into the core-shell structure quantum dot material solution;
the surface ligand material can be a high molecular polymer and has better compatibility with a glue monomer. The surface ligand material reacts with and bonds together with the quantum dot shell material.
And S04, obtaining the quantum dot solution through centrifugation and purification treatment.
S05, preparing a quantum dot solution by a solution method;
s06, adding glue monomers into the quantum dot solution to form a glue mixed solution;
after the glue monomer is added into the quantum dot solution, proper stirring can be carried out.
S07, adding a photoinitiator into the glue mixed solution to form quantum dot glue;
the photoinitiator is also called a photosensitizer or a photocuring agent, and is a compound which can absorb energy with a certain wavelength in an ultraviolet region (250-420 nm) or a visible light region (400-800 nm) to generate free radicals, cations and the like so as to initiate the polymerization, crosslinking and curing of monomers. Common photoinitiators include cleavage-type photoinitiators that initiate polymerization crosslinking and grafting reactions by absorbing ultraviolet quanta from intense ultraviolet light emission, resulting in the formation of solid films within fractions of a second of the liquid, such as 1173, 184, 907, 369, 1490, 1700, and the like. Photoinitiators, which form free radicals, such as BP, by hydrogen abstraction reactions. Cationic photoinitiators including diazonium salts, diaryliodonium salts, triarylsulfonium salts, alkylsulfonium salts, iron arene salts, sulfonyloxy ketones, and triarylsiloxy ethers. Its basic action features that the light activation makes the molecule to excited state, and the molecule takes part in serial decomposition reaction to generate super-strong proton acid (also called Bronsted acid) as active species for cationic polymerization to initiate the polymerization of epoxy compound, vinyl ether, lactone, acetal, cyclic ether, etc.
And S08, respectively and sequentially adopting S01 to S07 to form red light quantum dot glue, green light quantum dot glue and blue light quantum dot glue.
After the quantum dot solution is formed by the above method, steps S2 to S8 are sequentially performed.
S2, curing and removing the patterned printing screen to form a patterned quantum dot layer;
s3, preparing a packaging protective layer on the patterned quantum dot layer to form a patterned quantum dot color film structure;
and controlling the pattern size of the patterned quantum dot layer formed by screen printing according to the pixel size design requirement of the quantum dot display panel. Fig. 3 is a schematic diagram of a screen printing method according to an embodiment of the present invention, referring to fig. 3, a printing screen is first installed on a first quantum dot substrate 20, and meshes with corresponding sizes are set according to the positions and sizes of pixel points, generally 5-2000 μm in width and 12-75 μm in depth; coating the red light quantum dot glue 21 on a printing screen; scraping by using a first scraper 22, and uniformly filling the red light quantum dot glue 21 into the printing screen holes; carrying out ultraviolet irradiation to pre-cure the red light quantum dot glue 21; removing or separating the silk screen; heating or ultraviolet irradiating to solidify the red light quantum dot glue 21 to form a red light patterning quantum dot layer; and coating the packaging glue, heating and curing to form a packaging protective layer 23, and finishing the printing preparation of the red light patterned quantum dot color film structure.
S4, sequentially forming a red light patterned quantum dot color film structure, a green light patterned quantum dot color film structure and a blue light patterned quantum dot color film structure by respectively adopting S1-S3;
optionally, a bonding layer is arranged on the red light patterned quantum dot color film structure, and the green light patterned quantum dot color film structure is arranged on the bonding layer to form a quantum dot color film lamination structure; after the red-light patterned quantum dot color film structure is formed through steps S1 to S3, a bonding layer is arranged on the red-light patterned quantum dot color film structure, and a green-light patterned quantum dot color film structure is formed on the side, away from the red-light patterned quantum dot color film structure, of the bonding layer sequentially through steps S1 to S3. Arranging a bonding layer on the green light patterned quantum dot color film structure, and arranging the blue light patterned quantum dot color film structure on the bonding layer to form a quantum dot color film laminated structure; after the blue light patterned quantum dot color film structure is formed through S1-S3, a bonding layer is arranged on the green light patterned quantum dot color film structure, and the blue light patterned quantum dot color film structure is formed through S1-S3 on the side, away from the green light patterned quantum dot color film structure, of the bonding layer.
Fig. 4 is a schematic diagram of a quantum dot color film lamination structure provided in an embodiment of the present invention, referring to fig. 4, after a red light patterned quantum dot color film structure 40 is formed by using S1 to S3, a bonding layer 43 is formed, a second quantum dot substrate 44 of the green light patterned quantum dot color film structure is attached to the bonding layer 43, and then screen printing of green light patterned quantum dots is completed in a process from S1 to S3, that is, a printing screen is mounted on the second quantum dot substrate 44, a mesh with a corresponding size is provided, green light quantum dot glue 41 is coated, a second scraper 42 is used to scrape the screen, and green light quantum dot glue is uniformly filled in the holes of the printing screen; carrying out ultraviolet irradiation to pre-cure the green light quantum dot glue 41; removing or separating the silk screen; heating or ultraviolet irradiation is carried out to enable the green light quantum dot glue 41 to be cured, and a green light patterning quantum dot layer is formed; and finally, coating packaging glue, heating and curing to form a packaging protective layer 45, and finishing the printing preparation of the green light patterned quantum dot color film structure. Completing the screen printing of the blue light patterned quantum dots in the process from S1 to S3 again, namely installing a printing screen on the third quantum dot substrate 47, setting meshes with corresponding sizes, coating the blue light quantum dot glue 46, scraping by using a third scraper 72, and uniformly filling the blue light quantum dot glue into the printing screen holes; carrying out ultraviolet irradiation to pre-cure the blue light quantum dot glue 46; removing or separating the silk screen; heating or ultraviolet irradiating to solidify the blue light quantum dot glue 46 to form a blue light patterning quantum dot layer; and finally, coating packaging glue, heating and curing to form a packaging protective layer 48, completing the printing preparation of the blue light patterned quantum dot color film structure, and finally forming the quantum dot color film laminated structure.
S5, stacking the red light patterned quantum dot color film structure, the green light patterned quantum dot color film structure, and the blue light patterned quantum dot color film structure, wherein the green light patterned quantum dot color film structure is located between the red light patterned quantum dot color film structure and the blue light patterned quantum dot color film structure; the red light patterned quantum dot color film structure comprises a plurality of red photon pixels; the green light patterned quantum dot color film structure comprises a plurality of green photon pixels; the blue light patterned quantum dot color film structure comprises a plurality of blue photon pixels; each adjacent red sub-pixel, green sub-pixel and blue sub-pixel form a pixel unit;
the patterned quantum dot layer in the red light patterned quantum dot color film structure, the patterned quantum dot layer in the green light patterned quantum dot color film structure and the patterned quantum dot layer in the blue light patterned quantum dot color film structure are not overlapped in vertical projection on the base material.
Optionally, a screen printing method is used to form the patterned quantum dot layer, and the quantum dot material on the quantum dot layer may be distributed in a stripe shape or a block shape. Fig. 5 is a schematic diagram of a top view structure of a quantum dot color film stacked structure according to an embodiment of the present invention, and as shown in fig. 5, a red light patterned quantum dot layer in the red light patterned quantum dot color film structure includes a plurality of block-shaped red light sub-pixels 51; the green light patterned quantum dot layer in the green light patterned quantum dot color film structure includes a plurality of block-shaped green photonic pixels 52; the blue light patterned quantum dot layer in the blue light patterned quantum dot color film structure includes a plurality of block-shaped blue light sub-pixels 53.
S6, forming shading retaining walls between adjacent pixel units;
and a shading retaining wall is formed between adjacent pixel units to separate the pixel units, so that the optical crosstalk phenomenon is avoided, and the display resolution is higher.
According to the embodiment of the invention, a lamination mode is adopted, the green light patterned quantum dot color film structure and the blue light patterned quantum dot color film structure are superposed above the red light patterned quantum dot color film structure, so that the reabsorption of the long-wave quantum dot material (the red light patterned quantum dot layer) on the light emitted by the short-wave quantum dot material (the green light patterned quantum dot layer and the blue light patterned quantum dot layer) is reduced, and the luminous efficiency of the display device is improved; meanwhile, the quantum dot color film structures are patterned independently, so that mutual contact and influence among quantum dots are avoided, the reliability of the quantum dot color film is improved, in addition, shading retaining walls are added to separate each pixel unit, the optical crosstalk phenomenon is avoided, and the display resolution of the quantum dot color film is higher.
S7, providing an ultraviolet light backlight module, and arranging the ultraviolet light backlight module at one side of the red light patterned quantum dot color film structure, which is far away from the green light patterned quantum dot color film structure;
s8, arranging a first ultraviolet reflection layer on one side of the blue light patterned quantum dot color film structure, which is far away from the green light patterned quantum dot color film structure; arranging a second ultraviolet reflection layer on one side of the ultraviolet backlight module, which is far away from the red light patterned quantum dot color film structure;
the ultraviolet backlight module comprises a plurality of backlight sources arranged in an array manner, and pixel level backlight is realized; the backlight source can be, for example, an OLED element or an LED, a Micro-LED, etc. The peak wavelength of the light emitted by the backlight source in the ultraviolet backlight module can be, for example, 230-395nm ultraviolet light. And the position of each backlight source corresponds to one sub-pixel of the quantum dot display panel, and the patterned quantum dot color film structure at the position of the sub-pixel is correspondingly excited to emit light with corresponding color.
Because the first ultraviolet reflection layer is arranged on the side of the blue light patterned quantum dot color film structure, which is far away from the green light patterned quantum dot color film structure, the first ultraviolet reflection layer is a transparent material which can selectively transmit red light, green light and blue light and simultaneously reflect ultraviolet light with the emission peak wavelength of 230-395 nm. Each backlight source of the ultraviolet light backlight module emits ultraviolet light to excite the patterned quantum dot color film structure at the corresponding position to emit red light, green light or blue light. Excessive ultraviolet light passing through the red light patterned quantum dot color film structure, the green light patterned quantum dot color film structure and the ultraviolet light patterned quantum dot color film structure can be reflected by the first ultraviolet light reflection layer arranged above the quantum dot color film lamination structure, so that ultraviolet light can be prevented from being emitted from the quantum dot color film lamination structure, and in addition, the ultraviolet light reflected by the first ultraviolet light reflection layer continuously excites the red light patterned quantum dot color film structure, the green light patterned quantum dot color film structure and the blue light patterned quantum dot color film structure, so that the waste of the ultraviolet light can be avoided, and the light emitting efficiency of the device is improved.
And arranging a second ultraviolet reflection layer on one side of the ultraviolet backlight module, which is far away from the red light patterned quantum dot color film structure. The second blue light reflecting layer can reflect ultraviolet light emitted by the ultraviolet light backlight module to the quantum dot color film laminated structure again, so that the utilization rate of the ultraviolet light is further improved, and the luminous efficiency of the device is improved.
According to the technical scheme, the problems of direct mixing of red and green quantum dots, poor film forming performance and low blue light utilization rate are solved by preparing the red light, green light and blue light patterned quantum dot color film laminated structure and arranging the ultraviolet light backlight module, the first ultraviolet light reflection layer and the second ultraviolet light reflection layer, and the beneficial effect of high overall luminous efficiency of the display device is achieved.
On the basis of the above embodiment, optionally, after forming the quantum dot color film stacked structure, the method further includes: forming a first isolation film on one side of the red light patterned quantum dot color film structure, which is far away from the green light patterned quantum dot color film structure; and forming a second isolating film on one side of the green light patterned quantum dot color film structure, which is far away from the red light patterned quantum dot color film structure. Referring to fig. 6, a first isolation film 601 is formed on a side of the red light patterned quantum dot color film structure away from the green light patterned quantum dot color film structure;
a second isolation film 602 is formed on a side of the blue light patterned quantum dot color film structure away from the green light patterned quantum dot color film structure.
The first isolation film 601 and the second isolation film 602 may be formed by vacuum evaporation or magnetron sputtering, for example.
Optionally, the first isolation film 601 and/or the second isolation film 602 include at least one of Al2O3, ZrO2, TiO2, Fe2O3, and ZnO 2.
Optionally, the thickness of the first isolation film 601 and/or the second isolation film 602 ranges from 3nm to 50 nm.
The first isolation film 601 and/or the second isolation film 602 can block the quantum dot color film laminated structure 61 from being corroded by external water and oxygen.
An embodiment of the present invention further provides a quantum dot display panel, which can be formed by using the method for manufacturing a quantum dot display panel according to any embodiment of the present invention, and with reference to fig. 6, the method includes:
an ultraviolet backlight module 64;
the quantum dot color film laminated structure 61 is positioned on the light-emitting surface of the ultraviolet backlight module 64; the quantum dot color film lamination structure 61 comprises a red light patterned quantum dot color film structure 40, a green light patterned quantum dot color film structure 50 and a blue light patterned quantum dot color film structure 60 which are sequentially laminated away from the ultraviolet backlight module 64;
the first ultraviolet reflection layer 63 is positioned on one side, away from the ultraviolet backlight module 64, of the quantum dot color film laminated structure 61; the second ultraviolet reflection layer 62 is positioned on one side, away from the quantum dot color film laminated structure 61, of the ultraviolet backlight module 64;
wherein, the patterned quantum dot layer in the red light patterned quantum dot color film structure 40, the patterned quantum dot layer in the green light patterned quantum dot color film structure 50, and the patterned quantum dot layer in the blue light patterned quantum dot color film structure 60 do not overlap in vertical projection on the planar substrate on which the ultraviolet light backlight module 64 is located; the red light patterned quantum dot color film structure 40 includes a plurality of red light sub-pixels; the green patterned quantum dot color film structure 50 includes a plurality of green sub-pixels; the blue-patterned quantum dot color film structure 60 includes a plurality of blue-photon pixels; each adjacent red sub-pixel, green sub-pixel and blue sub-pixel form a pixel unit; a light blocking wall 65 is disposed between adjacent pixel units.
The quantum dot display panel device provided by the embodiment of the invention can be formed by adopting the preparation method of the quantum dot display panel provided by any embodiment of the invention, and has the corresponding functional module and beneficial effects of the execution and adoption method.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A preparation method of a quantum dot display panel is characterized by comprising the following steps:
s1, providing a base material, arranging a patterned printing silk screen on the base material, and coating quantum glue dispensing water on the patterned printing silk screen;
s2, curing and removing the patterned printing screen to form a patterned quantum dot layer;
s3, preparing a packaging protective layer on the patterned quantum dot layer to form a patterned quantum dot color film structure;
s4, sequentially forming a red light patterned quantum dot color film structure, a green light patterned quantum dot color film structure and a blue light patterned quantum dot color film structure by respectively adopting S1-S3;
s5, stacking a red light patterned quantum dot color film structure, a green light patterned quantum dot color film structure, and a blue light patterned quantum dot color film structure, wherein the green light patterned quantum dot color film structure is located between the red light patterned quantum dot color film structure and the blue light patterned quantum dot color film structure; the red light patterned quantum dot color film structure comprises a plurality of red photon pixels; the green light patterned quantum dot color film structure comprises a plurality of green photon pixels; the blue light patterned quantum dot color film structure comprises a plurality of blue photon pixels; each adjacent red sub-pixel, green sub-pixel and blue sub-pixel form a pixel unit;
s6, forming light shielding retaining walls between adjacent pixel units;
s7, providing an ultraviolet light backlight module, and arranging the ultraviolet light backlight module at one side of the red light patterned quantum dot color film structure, which is far away from the green light patterned quantum dot color film structure;
s8, arranging a first ultraviolet reflection layer on one side, away from the green light patterned quantum dot color film structure, of the blue light patterned quantum dot color film structure; arranging a second ultraviolet reflection layer on one side of the ultraviolet backlight module, which is far away from the red light patterned quantum dot color film structure;
the patterned quantum dot layer in the red light patterned quantum dot color film structure, the patterned quantum dot layer in the green light patterned quantum dot color film structure and the patterned quantum dot layer in the blue light patterned quantum dot color film structure are not overlapped in vertical projection on the base material.
2. The method for manufacturing a quantum dot display panel according to claim 1, further comprising, before S1:
s01, preparing a quantum dot core material solution by a solution method;
s02, adding a coating layer material into the quantum dot core material to form a core-shell structure quantum dot material solution;
s03, adding a surface ligand material solution into the core-shell structure quantum dot material solution;
and S04, obtaining the quantum dot solution through centrifugation and purification treatment.
S05, preparing a quantum dot solution by a solution method;
s06, adding glue monomers into the quantum dot solution to form a glue mixed solution;
s07, adding a photoinitiator into the glue mixed solution to form quantum dot glue;
and S08, respectively and sequentially adopting S01 to S07 to form red light quantum dot glue, green light quantum dot glue and blue light quantum dot glue.
3. The method of manufacturing a quantum dot display panel according to claim 2, wherein the quantum dot core material solution comprises an AxMyEz system; wherein, the element A is one of Ba, Ag, Na, Fe, In, Cd, Zn, Ga, Mg, Pb and Cs, the element M is one of S, Cl, O, As, N, P, Se, Te, Ti, Zr and Pb, and the element E is one of S, As, Se, O, Cl, Br and I.
4. The method for manufacturing the quantum dot display panel according to claim 3, wherein x is 0.3-2, y is 0.5-3, and z is 0-4.
5. The method of claim 3, wherein the quantum dot core material solution comprises a composite of one or at least two of CdSe, InP, and CsPbBr 3.
6. The method of claim 3, wherein the cladding material comprises at least one of organic polymer solution, inorganic oxide, metal simple substance, and alloy material.
7. The method for manufacturing a quantum dot display panel according to claim 1, further comprising:
forming a first isolation film on one side of the red light patterned quantum dot color film structure, which is far away from the green light patterned quantum dot color film structure;
and forming a second isolating film on one side of the blue light patterned quantum dot color film structure, which is far away from the green light patterned quantum dot color film structure.
8. The method of claim 7, wherein the first and/or second barrier film comprises at least one of Al2O3, ZrO2, TiO2, Fe2O3, and ZnO 2.
9. The method of manufacturing a quantum dot display panel according to claim 8, wherein the thickness of the first barrier film and/or the second barrier film is in a range of 3 to 50 nm.
10. A quantum dot display panel, comprising:
an ultraviolet light backlight module;
the quantum dot color film laminated structure is positioned on the light-emitting surface of the ultraviolet light backlight module; the quantum dot color film laminated structure comprises a red light patterned quantum dot color film structure, a green light patterned quantum dot color film structure and a blue light patterned quantum dot color film structure which are sequentially laminated away from the ultraviolet backlight module;
the first ultraviolet reflection layer is positioned on one side, away from the ultraviolet backlight module, of the quantum dot color film laminated structure; the second ultraviolet reflection layer is positioned on one side, away from the quantum dot color film laminated structure, of the ultraviolet backlight module;
the patterned quantum dot layer in the red light patterned quantum dot color film structure, the patterned quantum dot layer in the green light patterned quantum dot color film structure and the patterned quantum dot layer in the blue light patterned quantum dot color film structure are not overlapped in vertical projection on the planar substrate where the ultraviolet light backlight module is located; the red light patterned quantum dot color film structure comprises a plurality of red photon pixels; the green light patterned quantum dot color film structure comprises a plurality of green photon pixels; the blue light patterned quantum dot color film structure comprises a plurality of blue photon pixels; each adjacent red sub-pixel, green sub-pixel and blue sub-pixel form a pixel unit; and a shading retaining wall is arranged between the adjacent pixel units.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011563844.9A CN112666748A (en) | 2020-12-25 | 2020-12-25 | Preparation method of quantum dot display panel and quantum dot display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011563844.9A CN112666748A (en) | 2020-12-25 | 2020-12-25 | Preparation method of quantum dot display panel and quantum dot display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112666748A true CN112666748A (en) | 2021-04-16 |
Family
ID=75410085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011563844.9A Pending CN112666748A (en) | 2020-12-25 | 2020-12-25 | Preparation method of quantum dot display panel and quantum dot display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112666748A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113985512A (en) * | 2021-11-25 | 2022-01-28 | 京东方科技集团股份有限公司 | Preparation method of optical filter bank, optical filter and display device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102944943A (en) * | 2012-11-09 | 2013-02-27 | 京东方科技集团股份有限公司 | Quantum dot color filter, liquid crystal panel and display device |
| CN103091895A (en) * | 2013-01-22 | 2013-05-08 | 北京京东方光电科技有限公司 | Display device and manufacturing method thereof |
| CN103278876A (en) * | 2013-05-28 | 2013-09-04 | 京东方科技集团股份有限公司 | Quantum dot color filter and manufacturing method thereof and display device |
| CN105093617A (en) * | 2015-08-05 | 2015-11-25 | 深圳市华星光电技术有限公司 | Liquid crystal display panel and manufacturing method thereof |
| CN105223724A (en) * | 2015-10-08 | 2016-01-06 | 深圳市华星光电技术有限公司 | Quantum dot liquid crystal indicator |
| CN208970563U (en) * | 2018-11-30 | 2019-06-11 | 昆山工研院新型平板显示技术中心有限公司 | A kind of display panel and display device |
| CN110187551A (en) * | 2019-06-21 | 2019-08-30 | 京东方科技集团股份有限公司 | Color membrane substrates and preparation method thereof, liquid crystal display panel and liquid crystal display device |
| CN110224012A (en) * | 2019-06-18 | 2019-09-10 | 京东方科技集团股份有限公司 | Display panel and display device |
-
2020
- 2020-12-25 CN CN202011563844.9A patent/CN112666748A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102944943A (en) * | 2012-11-09 | 2013-02-27 | 京东方科技集团股份有限公司 | Quantum dot color filter, liquid crystal panel and display device |
| CN103091895A (en) * | 2013-01-22 | 2013-05-08 | 北京京东方光电科技有限公司 | Display device and manufacturing method thereof |
| CN103278876A (en) * | 2013-05-28 | 2013-09-04 | 京东方科技集团股份有限公司 | Quantum dot color filter and manufacturing method thereof and display device |
| CN105093617A (en) * | 2015-08-05 | 2015-11-25 | 深圳市华星光电技术有限公司 | Liquid crystal display panel and manufacturing method thereof |
| CN105223724A (en) * | 2015-10-08 | 2016-01-06 | 深圳市华星光电技术有限公司 | Quantum dot liquid crystal indicator |
| CN208970563U (en) * | 2018-11-30 | 2019-06-11 | 昆山工研院新型平板显示技术中心有限公司 | A kind of display panel and display device |
| CN110224012A (en) * | 2019-06-18 | 2019-09-10 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN110187551A (en) * | 2019-06-21 | 2019-08-30 | 京东方科技集团股份有限公司 | Color membrane substrates and preparation method thereof, liquid crystal display panel and liquid crystal display device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113985512A (en) * | 2021-11-25 | 2022-01-28 | 京东方科技集团股份有限公司 | Preparation method of optical filter bank, optical filter and display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106526962B (en) | Light conversion film, preparation method thereof and display device | |
| JP7484457B2 (en) | Micro LED display device | |
| US7732827B2 (en) | High efficient phosphor-converted light emitting diode | |
| JP5226774B2 (en) | Light emitting device | |
| WO2017080064A1 (en) | Method for preparing quantum dot colour film substrate, and quantum dot colour film substrate | |
| CN108761894B (en) | Color film substrate, preparation method thereof, display panel and display device | |
| KR20170057041A (en) | Display pannel and apparatus for the same | |
| CN107424524A (en) | A kind of miniature LED display panel | |
| TW201947303A (en) | Quantum dot display device | |
| WO2024093615A1 (en) | Micro-display chip and manufacturing method therefor | |
| CN112631019A (en) | Preparation method of quantum dot display panel and quantum dot display panel | |
| CN112666748A (en) | Preparation method of quantum dot display panel and quantum dot display panel | |
| CN213843712U (en) | Quantum dot display panel and display device | |
| CN112631021A (en) | Quantum dot display panel and self-assembly preparation method thereof | |
| TWI683449B (en) | Quantum dot material, manufacturing method of the quantum dot material and display device of the quantum dot material | |
| KR20060024545A (en) | High-luminance organic light-emitting device displays | |
| CN112666750A (en) | Quantum dot display panel and preparation method thereof | |
| CN214254424U (en) | Quantum dot display panel and display device | |
| CN111710800B (en) | Display panel and preparation method thereof | |
| JP2000284705A (en) | Optical display device and production of optical display device | |
| CN115692587A (en) | Color conversion layer for Micro-LED and preparation method thereof | |
| CN112701234B (en) | Quantum dot display panel and preparation method thereof | |
| CN112631020A (en) | Quantum dot display panel, preparation method and display device | |
| WO2022134333A1 (en) | Quantum dot display panel and manufacturing method therefor, and display device | |
| CN112666735A (en) | Quantum dot display panel and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20210513 Address after: 518000 unit 2-3, 8 / F, building 18a, China Hisense innovation industry city, No. 12, Ganli 6th Road, Ganli Industrial Zone, Buji street, Longgang District, Shenzhen City, Guangdong Province Applicant after: SHENZHEN PLANCK INNOVATION TECHNOLOGY Co.,Ltd. Address before: Room 201-1055, building 4, phase II, Putuo Ocean Science Park, No.2, Zhongke Road, Zhanmao street, Putuo District, Zhoushan City, Zhejiang Province, 316000 Applicant before: Zhoushan Pulang Industrial Co.,Ltd. |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210416 |