CN106526962B - Light conversion film, preparation method thereof and display device - Google Patents
Light conversion film, preparation method thereof and display device Download PDFInfo
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- CN106526962B CN106526962B CN201611067069.1A CN201611067069A CN106526962B CN 106526962 B CN106526962 B CN 106526962B CN 201611067069 A CN201611067069 A CN 201611067069A CN 106526962 B CN106526962 B CN 106526962B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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Abstract
The invention provides a light conversion film, a preparation method thereof and display equipment. This light conversion diaphragm includes the substrate layer and sets up in the pixel isolation structure of the first surface of substrate layer, forms a plurality of sub-pixel regions of mutual isolation between the pixel isolation structure, and the light conversion diaphragm still includes: the quantum dot light-emitting layer is arranged on the substrate layer corresponding to at least part of the sub-pixel regions; the first glue layer is arranged on one side, far away from the first surface, of the quantum dot light-emitting layer. Compared with the prior art that the quantum dots and the photoresist are mixed, the scheme reduces the contact area of the quantum dots and the photoresist, reduces quenching of the photoresist components to the quantum dots, and improves the photoluminescence effect of the light conversion film; moreover, the glue layer is arranged on the quantum dot light emitting layer, so that the quantum dots can be completely sealed in the sub-pixel region without additionally adding a protective layer, the structure is simplified, the invasion of water and oxygen is effectively blocked, and the reliability of the light conversion film is improved.
Description
Technical Field
The invention relates to the technical field of optics, in particular to a light conversion film, a preparation method thereof and display equipment.
Background
With the development of science and technology, light, thin, fast-response, and colorful OLED (organic light emitting diode) display devices are gradually paid attention to by people, and traditional LCDs (liquid crystal displays) are threatened, so quantum dots (quantum dots) are increasingly introduced into the backlight module of the traditional LCD to release a quantum dot television, and the color gamut of the display device is improved to the level of the OLED. The process for introducing the quantum dots generally comprises the steps of mixing and filling red and green quantum dots in a glass tube or making a film to be added into a backlight module, and under the excitation of blue backlight, emitting red light and green light with high color purity by the quantum dots, so that full-color display is realized.
In both LCD and OLED displays, a color filter (color filter) is required to be added on the light emitting side for accurate color representation. The half-peak width of the quantum dots is extremely narrow, so that the color gamut of the quantum dot television is hardly influenced after passing through the color filter, and the color gamut displayed by the OLED with the wide half-peak width is greatly reduced.
However, after a color filter is introduced into a quantum dot television or an OLED, more light energy is lost, in the prior art, a quantum dot color film is prepared by blending a photoresist and monochromatic quantum dots, the photoresist generally utilizes 365nm wavelength ultraviolet light to realize a curing reaction, the quantum dots have greater absorption under the irradiation of an ultraviolet lamp with the wavelength, so that the curing rate is slowed, the energy of the ultraviolet lamp needs to be increased or the amount of an initiator needs to be increased to ensure the smooth reaction of the photoresist, and the residue of the photoinitiator and the like can greatly reduce the luminous efficiency of the quantum dots.
Disclosure of Invention
The invention mainly aims to provide a light conversion film, a preparation method thereof and display equipment, so as to solve the problem of light energy loss caused by introducing a color filter in the prior art.
In order to achieve the above object, according to one aspect of the present invention, there is provided a light conversion film sheet including a substrate layer and pixel isolation structures disposed on a first surface of the substrate layer, the pixel isolation structures forming a plurality of sub-pixel regions isolated from each other therebetween, the light conversion film sheet further including: the quantum dot light-emitting layer is arranged on the substrate layer corresponding to at least part of the sub-pixel regions; the first glue layer is arranged on one side, far away from the first surface, of the quantum dot light-emitting layer.
Furthermore, the quantum dot light-emitting layer is arranged on the substrate layer corresponding to part of the sub-pixel regions, and the light conversion film further comprises a second adhesive layer arranged on the substrate layer corresponding to the sub-pixel regions without the quantum dot light-emitting layer.
Further, the light conversion film sheet further comprises a filter layer arranged in the same sub-pixel region as the quantum dot light emitting layer, wherein the filter layer is arranged on one side of the quantum dot light emitting layer far away from the base material layer or one side of the quantum dot light emitting layer close to the base material layer, and is used for reflecting light with a first wavelength and transmitting light with a second wavelength.
Furthermore, the filter layer sets up on the surface of keeping away from the substrate layer of first glue film, and the light conversion diaphragm still includes the smooth layer, and when being provided with the second glue film on the substrate layer, the smooth layer sets up on the exposed surface of filter layer and second glue film, and when not setting up the second glue film on the substrate layer, quantum dot luminous layer sets up on the substrate layer that each sub-pixel region corresponds, and the smooth layer sets up on the exposed surface of filter layer.
Further, the material forming the quantum dot light emitting layer includes a quantum dot material.
According to another aspect of the present invention, there is provided a method for manufacturing the above light conversion film sheet, comprising the steps of: s1, providing a substrate layer with pixel isolation structures, wherein a plurality of sub-pixel areas isolated from each other are formed between the pixel isolation structures; s2, the quantum dot ink is arranged in at least part of the sub-pixel area, the glue is arranged in the sub-pixel area, a quantum dot light emitting layer and a first glue layer which are mutually independent are formed, and the first glue layer is located on one side, far away from the base material layer, of the quantum dot light emitting layer.
Further, step S2 includes the following processes: disposing quantum dot ink in at least a portion of the sub-pixel region and drying to form a quantum dot light emitting layer; and arranging the glue on the quantum dot light-emitting layer, or arranging the glue on the quantum dot light-emitting layer and the exposed surface of the pixel isolation structure, and curing the glue to form a first glue layer.
Further, quantum dot ink is arranged in the sub-pixel area by adopting an ink-jet printing process; the glue is arranged by adopting the screen printing, spin coating, slit coating or ultrasonic spraying process.
Further, step S2 includes the following processes: forming a mixed solution of quantum dot ink and glue, preferably the glue is a thermal curing glue; arranging the mixed solution in at least part of the sub-pixel area and standing to enable the quantum dot ink and the glue to be layered, wherein the quantum dot ink forms a quantum dot light emitting layer, the glue forms a glue layer to be cured, and the glue layer to be cured is positioned above the quantum dot light emitting layer; and curing the glue layer to be cured to form a first glue layer, wherein the curing temperature is preferably less than or equal to 120 ℃, and more preferably less than or equal to 80 ℃.
Further, the mixed solution is disposed in the sub-pixel region using inkjet printing or screen printing.
Further, step S2 further includes the following process: before the process of forming the quantum dot light-emitting layer, arranging a filter layer on a substrate layer corresponding to a sub-pixel area where the quantum dot light-emitting layer is preset; or after the process of forming the quantum dot light-emitting layer, a filter layer is arranged on one side, far away from the base material layer, of the quantum dot light-emitting layer, and the filter layer is located between the quantum dot light-emitting layer and the first adhesive layer, or the filter layer is located on one side, far away from the quantum dot light-emitting layer, of the first adhesive layer.
Further, in step S2, the quantum dot ink is disposed in a part of the sub-pixel regions, step S2 further includes a process of disposing a glue on the substrate layer corresponding to the sub-pixel region where the quantum dot light emitting layer is not disposed and curing to form a second glue layer, and after the process of sequentially disposing the first glue layer and the filter layer on the side of the quantum dot light emitting layer away from the substrate layer, the preparation method further includes the following steps: and S3, arranging a smooth layer on the exposed surfaces of the filter layer and the second adhesive layer.
Further, after the process of disposing the quantum dot ink in each sub-pixel region and disposing the adhesive layer and the filter layer in sequence on the side of the quantum dot light-emitting layer away from the substrate layer in step S2, the preparation method further includes the following steps: and S3, arranging a smooth layer on the exposed surface of the filter layer.
According to another aspect of the present invention, there is also provided a display device including a backlight and a light conversion film, the light conversion film being the above-described light conversion film.
Further, the backlight source is a blue light source, and the quantum dot light emitting layer in the light conversion film sheet comprises a red quantum dot layer and a green quantum dot layer; or the backlight source is an ultraviolet light source, and the quantum dot light-emitting layer in the light conversion film sheet comprises a red quantum dot layer, a green quantum dot layer and a blue quantum dot layer.
By applying the technical scheme of the invention, the light conversion film comprises a substrate layer and a pixel isolation structure arranged on the first surface of the substrate layer, wherein the pixel isolation structure forms a plurality of sub-pixel regions which are isolated from each other; and, still need to coat one deck protective layer again after mixing quantum dot and glue and solidification molding among the prior art, and this application sets up the glue film on quantum dot light emitting layer to need not additionally to add the protective layer again, just can all seal the quantum dot in the sub-pixel region, and then simplified the structure and effectually blockked the invasion and attack of water oxygen, improved the reliability of light conversion diaphragm.
In addition to the objects, features and advantages described above, other objects, features and advantages of the present invention are also provided. The present invention will be described in further detail below with reference to the drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic view of a light conversion film according to the present invention;
FIG. 2 is a schematic view showing the structure of another light conversion film provided by the present invention;
FIG. 3 is a schematic structural diagram of a light conversion film with a smoothing layer disposed on exposed surfaces of a second adhesive layer and a filter layer according to the present invention;
FIG. 4 is a schematic diagram illustrating a structure of a light conversion film with a slip layer disposed on an exposed surface of a filter layer according to the present invention;
fig. 5 is a schematic structural diagram illustrating a light conversion film sheet in which a first adhesive layer is disposed on an exposed surface of a quantum dot light emitting layer according to the present invention; and
fig. 6 is a schematic flow chart illustrating a method for manufacturing a light conversion film provided in an embodiment of the present invention.
Wherein the figures include the following reference numerals:
10. a substrate layer; 20. a pixel isolation structure; 30. a quantum dot light emitting layer; 40. a first glue layer; 41. a second adhesive layer; 50. a filter layer; 60. and (6) smoothing the layer.
Detailed Description
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged under appropriate circumstances in order to facilitate the description of the embodiments of the invention herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
As described in the background, quantum dot televisions or OLEDs of the prior art lose much light energy after the introduction of color filters. The inventors of the present application have studied the above-mentioned problem, and have proposed a light conversion film, as shown in fig. 1 to 5, including a substrate layer 10 and a pixel isolation structure 20 disposed on a first surface of the substrate layer 10, where the pixel isolation structure 20 forms a plurality of sub-pixel regions isolated from each other, and the light conversion film further includes: the quantum dot light-emitting layer 30 is arranged on the substrate layer 10 corresponding to at least part of the sub-pixel regions; the first adhesive layer 40 is disposed on one side of the quantum dot light emitting layer 30, which is far away from the first surface.
The light conversion film sheet further comprises the quantum dot light emitting layer and the first adhesive layer, the quantum dot light emitting layer is arranged on the base material layer corresponding to the sub-pixel region, and the first adhesive layer is arranged on one side, far away from the base material layer, of the quantum dot light emitting layer, so that compared with the prior art that quantum dots and photoresist are mixed, the contact area of the quantum dots and the base material layer is reduced, the quenching of glue components to the quantum dots is effectively reduced, and the photoluminescence effect of the light conversion film sheet is improved; and, still need to coat a layer protective layer again after mixing quantum dot and photoresist and solidification molding among the prior art, and this application sets up first glue film on the quantum dot layer to need not additionally to add the protective layer again, just can all seal the quantum dot in the sub-pixel region, and then simplified the structure and effectually blockked the invasion and attack of water oxygen, improved the reliability of light conversion diaphragm.
In a preferred embodiment, the first glue layer 40 is disposed on an exposed surface of the quantum dot light emitting layer 30 away from the first surface, as shown in fig. 1; in another preferred embodiment, the first glue layer 40 is disposed on the exposed surface of the quantum dot light emitting layer 30 away from the first surface and the pixel isolation structure 20, as shown in fig. 2. At this time, the distances from each point of the exposed surface of the first adhesive layer 40 to the first surface of the substrate layer 10 are approximately equal, so that the exposed surface of the light conversion film is flat. When the quantum dot light emitting layer 30 is disposed on the substrate layer 10 corresponding to a part of the sub-pixel regions, the light conversion film further includes a second adhesive layer 41, and the second adhesive layer 41 is disposed on the substrate layer 10 corresponding to the sub-pixel region where the quantum dot light emitting layer 30 is not disposed.
In order to improve the purity of the outgoing light and the utilization rate of the backlight, it is preferable that the light conversion film further includes a filter layer 50 disposed in the same subpixel region as the quantum dot light emitting layer 30, and the filter layer 50 is disposed on a side of the quantum dot light emitting layer 30 away from the substrate layer 10 or a side close to the substrate layer 10, and is configured to reflect light of the first wavelength and transmit light of the second wavelength, as shown in fig. 3 to 5. After the light conversion film is disposed on one side of the backlight, the filter layer 50 in the light conversion film can filter, in a reflective manner, the light (i.e., the light of the first wavelength) transmitted by the quantum dot light emitting layer 30 from the backlight and transmit the photoluminescence (i.e., the light of the second wavelength) of the quantum dot light emitting layer 30 from the backlight. For example, when the backlight source is a blue light source, the light of the first wavelength reflected by the filter layer 50 is blue light, and the light of the second wavelength transmitted may include red light excited and emitted by the red quantum dot light emitting layer 30 and/or green light excited and emitted by the green quantum dot light emitting layer 30; when the light source is a backlight light source, the light with the first wavelength reflected by the filter layer 50 is ultraviolet light, and the light with the second wavelength transmitted may include one or more of red light excited and emitted by the red quantum dot light emitting layer 30, green light excited and emitted by the green quantum dot light emitting layer 30, and blue light excited and emitted by the blue quantum dot light emitting layer 30. The filter layer 50 may be a dichroic filter.
Those skilled in the art can set the position of the filter layer 50 according to actual requirements, which specifically includes the following three cases: 1. the filter layer 50 is disposed on the exposed surface of the substrate layer 10, and the quantum dot light emitting layer 30 is disposed on the exposed surfaces of the filter layer 50 and the substrate layer 10, that is, the filter layer 50 is disposed between the substrate layer 10 and the quantum dot light emitting layer 30, as shown in fig. 5, the quantum dot light emitting layer 30 in the light conversion film includes a red quantum dot light emitting layer and a green quantum dot light emitting layer, and the filter layer 50 is disposed between the substrate layer 10 and the quantum dot light emitting layer 30, and at this time, blue light is used as a backlight source; 2. the filter layer 50 is disposed on the exposed surface of the quantum dot light-emitting layer 30, and the first adhesive layer 40 is disposed on the exposed surfaces of the filter layer 50 and the quantum dot light-emitting layer 30, that is, the filter layer 50 is disposed between the quantum dot light-emitting layer 30 and the first adhesive layer 40; 3. the filter layer 50 is disposed on the surface of the first adhesive layer 40 (corresponding to the surface of the sub-pixel region), and as shown in fig. 4, the quantum dot light emitting layer 30 in the light conversion film includes a red quantum dot light emitting layer, a green quantum dot light emitting layer, and a blue quantum dot light emitting layer, and the filter layer 50 is disposed on one side of the quantum dot light emitting layer 30 away from the substrate layer 10, and at this time, ultraviolet light is used as a backlight source.
In the above preferred embodiment, when a blue backlight is provided, the filter layer 50 is disposed on the light emitting side of the red and green quantum dot layer in the quantum dot light emitting layer 30, and at this time, the filter layer 50 is composed of a plurality of filter structures disconnected from each other, and the filter structures are respectively disposed on the red quantum dot layer and the green quantum dot layer, and are used for reflecting the blue light that does not excite the quantum dot light emitting layer 30, so that the blue light is reflected back to excite the quantum dot light emitting layer 30 to emit red light and green light, thereby improving the backlight utilization rate, and filtering the blue light by a reflection manner, so that the emitted red light and green light are purer; when the backlight is an ultraviolet light, the filter layer 50 is disposed on the light emitting side of the red, green and blue quantum dot layer in the quantum dot light emitting layer 30, and is configured to transmit the red, green and blue light, and reflect the ultraviolet light that does not excite the quantum dot light emitting layer 30 to emit light, so that the ultraviolet light is reflected back to excite the quantum dot light emitting layer 30 to implement photoluminescence, and thus the quantum dot light emitting layer 30 emits the red, green and blue light, at this time, the filter layer 50 is composed of a plurality of filter structures that are disconnected from each other, and the filter structures are respectively disposed on the red, green and blue quantum dot layers, or may be a complete layer structure disposed on the quantum dot light emitting layer 30.
In the light conversion film described above in which the filter layer 50 is disposed on the surface of the first adhesive layer 40 on the side away from the substrate layer 10, since the filter layer 50 disposed on the quantum dot light emitting layer 30 may be composed of a plurality of filter structures that are disconnected from each other, in order to make the entire structure more flat, it is more preferable that the light conversion film further include a smoothing layer 60 for making the distances from the exposed surface of the smoothing layer 60 to the first surface approximately equal. Specifically, when the second adhesive layer 41 is disposed on the substrate layer 10, the smoothing layer 60 is disposed on exposed surfaces of the filter layer 50 and the second adhesive layer 41, or when the second adhesive layer 41 is not disposed on the substrate layer 10, the quantum dot light emitting layer 30 is disposed on the substrate layer 10 corresponding to each sub-pixel region, and the smoothing layer 60 is disposed on an exposed surface of the filter layer 50.
As shown in fig. 3, the smoothing layer 60 can also function to protect the quantum dot light emitting layer 30 and the filter layer 50. Preferably, the material forming the smoothing layer 60 is selected from any one or more of transparent acrylic resin, polyimide resin, and urethane resin.
When the filter layer 50 is disposed on the exposed surface of the quantum dot light emitting layer 30, as an alternative scheme, the smoothing layer 60 may be disposed on the exposed surfaces of the filter layer 50 and the quantum dot light emitting layer 30 instead of the first adhesive layer 40, so that the first adhesive layer 40 does not need to be disposed in the light conversion film, and not only can the protection effect on the quantum dot light emitting layer 30 and the filter layer 50 be achieved, but also the smoothness of the light conversion film is ensured.
In the light conversion film of the present invention, the heights of the quantum dot light emitting layers 30 in the respective sub-pixel regions are not necessarily the same, the heights of the quantum dot light emitting layers 30 in the respective sub-pixel regions vary according to the required light induced efficiency, and the light conversion film may be thinner when the light induced efficiency is higher, so that the heights of the quantum dot light emitting layers 30 in the sub-pixel regions are smaller.
In the light conversion film of the present invention, the adhesive forming the first adhesive layer 40 and the second adhesive layer 41 may be a thermal curing adhesive, a photo curing adhesive, or a photo-thermal curing adhesive. In the production of the light conversion film, the above-mentioned preferable types of the glue can form a good delamination between the quantum dot ink and the glue, and the formed first glue layer 40 is located on the side of the quantum dot light emitting layer 30 away from the base layer 10. The quantum dot light-emitting layer 30 and the first adhesive layer are separately arranged, compared with quantum dot ink and adhesive blending, the layered light-curing is carried out, because the contact surface area of the quantum dot and the adhesive is reduced, the generation of free radicals by a photocatalyst in the light-curing adhesive under the action of light is greatly reduced, the free radicals easily quench the quantum dot, the separate arrangement can reduce photons of the quantum dot (the quantum dot can absorb ultraviolet light) and the adhesive competing for a curing light source, and the curing speed is improved.
In the light conversion film sheet of the present invention, the pixel isolation structure 20 may be a black matrix, and the substrate layer 10 may be glass or another substrate having high transmittance. In order to achieve better delamination between the quantum dot ink and the glue, it is preferable that the material forming the quantum dot light emitting layer 30 includes a quantum dot material and a solvent. More preferably, the quantum dot material in the quantum dot light emitting layer 30 is selected from any one or more of red quantum dots, green quantum dots and blue quantum dots, and after the light conversion film is applied to a display device, a person skilled in the art can reasonably select the type of the quantum dot material according to the light emitting color of a light source.
In order to achieve better delamination between the quantum dot ink and the glue, the solvent is preferably selected from any one or more of alkanes, aromatics, esters, ketones, ethers and alcohols, such as toluene, n-octane, decane, etc. The solvent can be selected reasonably by those skilled in the art according to the processes of the formed quantum dot light-emitting layer and the first glue layer.
In a preferred embodiment, the quantum dot ink is dried to form the quantum dot light emitting layer 30, and then the glue is applied to form the first glue layer 40, in which case, the solvent is at least one of the above preferred types, and the solvent is removed by standing to volatilize or heating to accelerate the volatilization, so as to form the quantum dot light emitting layer 30 and the first glue layer 40 which are independently arranged; in another preferred embodiment, the quantum dot ink and the glue are layered by disposing a mixed solution of the quantum dot ink and the glue in at least a part of the sub-pixel region, in which case, the above-mentioned solvents are at least two of the above-mentioned preferred types, such as the above-mentioned two solvents a and B, respectively, the two solvents AB are good solvents of the curing glue, the solvent a is a good solvent of the quantum dot, and the solvent B is a poor solvent of the quantum dot, wherein the solvent a serving as the good solvent of the quantum dot has a high volatilization rate (or a low boiling point), the solvent a, the solvent B, the curing glue and the quantum dot are blended, and the mixed solution is applied to the sub-pixel region, and by pre-baking the substrate layer 10, as the component of the solvent a becomes less, the quantum dot begins to precipitate to the bottom of the sub-pixel region under the action of gravity, and finally the solvent a and the solvent B are successively removed as the pre-baking time is prolonged (in order to ensure that the solvents are all removed, later on, the solvent can be removed completely by vacuum drying), only the quantum dot and solid glue are left, and the quantum dot luminescent layer 30 and the first glue layer 40 which are independently arranged are formed by solidifying the glue on the upper layer.
According to another aspect of the present invention, there is provided a method of manufacturing the above light conversion film sheet, as shown in fig. 5, the method comprising the steps of: s1, providing a substrate layer with pixel isolation structures, wherein a plurality of sub-pixel areas isolated from each other are formed between the pixel isolation structures; and S2, the quantum dot ink and the glue are arranged in at least part of the sub-pixel area to form a quantum dot light-emitting layer and a first glue layer which are mutually independent, and the first glue layer is positioned on one side of the quantum dot light-emitting layer, which is far away from the substrate layer.
In the preparation method of the light conversion film, the quantum dot ink and the glue are arranged in the sub-pixel area to form the mutually independent quantum dot light-emitting layer and the first glue layer, and the first glue layer is positioned on one side of the quantum dot light-emitting layer, which is far away from the substrate layer, so that compared with the prior art of mixing the quantum dots and the photoresist, the contact area of the quantum dot light-emitting layer and the first glue layer is reduced, the quenching of glue components to the quantum dots is effectively reduced, and the photoluminescence effect of the light conversion film is improved; because a protective layer is required to be coated after the quantum dots and the photoresist are mixed, cured and molded in the prior art, the quantum dots can be completely sealed in the sub-pixel region without additionally adding a protective layer by arranging the first adhesive layer on the quantum dot layer, so that the structure is simplified, the invasion of water and oxygen is effectively blocked, and the reliability of the light conversion film is improved; in addition, the quantum dot light-emitting layer and the first adhesive layer in the preparation method do not need a yellow light process, and can be prepared and molded by a common curing process, so that the cost is saved.
An exemplary embodiment of a method of manufacturing a light conversion film sheet provided according to the present invention will be described in more detail below with reference to fig. 1 to 4. These exemplary embodiments may, however, be embodied in many different forms and should not be construed as limited to only the embodiments set forth herein. It should be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of these exemplary embodiments to those skilled in the art.
In a preferred embodiment, the step S2 includes the following steps: disposing the quantum dot ink in at least a portion of the sub-pixel region and drying to form a quantum dot light emitting layer 30; the glue is disposed on the quantum dot light emitting layer 30, or disposed on the exposed surfaces of the quantum dot light emitting layer 30 and the pixel isolation structure 20, and is cured to form the first glue layer 40. In order to precisely control the amount of the quantum dot ink used in preparing the quantum dot light emitting layer 30, it is preferable that the quantum dot ink is disposed in the sub-pixel region using an inkjet printing process; in order to reduce the manufacturing cost of the first adhesive layer 40, the adhesive is preferably disposed by screen printing, spin coating, slit coating or ultrasonic spraying.
In the above preferred embodiment, the quantum dot light emitting layer is dried first, so that the movement of the quantum dot after the addition of the glue is reduced, that is, the contact between the quantum dot and the glue is reduced, and the glue can be selected from a thermal curing glue, a photo curing glue or a photo-thermal dual curing glue. In order to reduce the damage to the quantum dot characteristics in the thermal curing process, the curing temperature of the thermal curing adhesive is preferably less than or equal to 120 ℃, and more preferably less than or equal to 80 ℃. In addition, in order to avoid the situation that the curing is incomplete even the curing reaction does not occur due to the absorption of the quantum dots to the UV light, preferably, the light for curing the glue is irradiated from the upper surface of the light-curing glue, which is far away from the quantum dot light-emitting layer, and the light for curing the glue passes through the first glue layer and then passes through the quantum dot layer, or the light is absorbed by the first glue layer and does not pass through the quantum dot layer, so that the influence of the contention absorption of the quantum dots to the light on the curing effect of the first glue layer is avoided, and the curing efficiency of the first glue layer is improved.
In the above preferred embodiment, the quantum dot ink may include a quantum dot material and a solvent, and preferably, the solvent may be selected from at least one of alkanes, aromatics, esters, ketones, ethers, and alcohols, such as toluene, n-octane, decane, and the like. At this time, the solvent is removed by standing volatilization or heating accelerated volatilization to form the quantum dot light emitting layer 30 and the first glue layer 40 which are independently disposed.
In another preferred embodiment, the step S2 includes the following steps: forming a mixed solution of quantum dot ink and glue; arranging the mixed solution in a sub-pixel area and standing to enable the quantum dot ink and the glue to be layered, wherein the quantum dot ink forms a quantum dot light-emitting layer 30, the glue forms a first glue layer 40 to be cured, and the first glue layer 40 to be cured is positioned above the quantum dot light-emitting layer 30; the first glue layer 40 to be cured is cured to form the first glue layer 40. In order to improve the performance of the quantum dot light emitting layer 30 and the first paste layer 40, it is preferable that the mixed solution is disposed in the sub-pixel region using inkjet printing or screen printing.
In the above preferred embodiment, the quantum dot ink may include a quantum dot material and a solvent. The thermal curing glue is preferably used because the thermal curing glue does not contain a photoinitiator, the photoinitiator is used for improving the curing efficiency of the thermal curing glue, and the photoinitiator generates free radicals under illumination, and the free radicals can cause quenching of quantum dots when contacting with the quantum dots, so that the photoinduced efficiency is reduced. Therefore, the thermosetting adhesive without the photoinitiator avoids the generation of the above adverse phenomenon, improves the photoinduced effect of the quantum dots, and enables the adhesive to be cured normally. The curing temperature of the thermal curing adhesive is preferably less than or equal to 120 ℃, and more preferably less than or equal to 80 ℃, so that the influence of high temperature during curing of the thermal curing adhesive on the quantum dots is avoided, and the photoinduced efficiency of the quantum dots is further improved. The solvent can be at least two selected from alkanes, aromatics, esters, ketones, ethers and alcohols, the two solvents are respectively a solvent A and a solvent B, the two solvents AB are good solvents of curing glue, the solvent A is a good solvent of quantum dots, the solvent B is a poor solvent of the quantum dots, wherein the solvent A serving as the good solvent of the quantum dots has a high volatilization rate (or a low boiling point), the solvent A, the solvent B, the curing glue and the quantum dots are mixed, the mixed solution is coated on a sub-pixel area, the substrate layer 10 is pre-baked, as the component of the solvent A is reduced, the quantum dots begin to be separated out and are deposited to the bottom of the sub-pixel area under the action of gravity, and as the pre-baking time is prolonged, the solvent A and the solvent B are removed in sequence (in order to ensure that the solvent is completely removed, and the solvent can be removed in a vacuum drying mode in the later period), only the quantum dots and the solid glue are left, so that the quantum dot light-emitting layer 30 and the first glue layer 40 which are independently arranged are formed by curing the glue on the upper layer.
Also, when the quantum dot ink and the glue are disposed in a part of the sub-pixel regions, the step S2 may further include a process of forming a second glue layer 41, where the second glue layer 41 is disposed on the substrate layer 10 corresponding to the sub-pixel region where the quantum dot light-emitting layer 30 is not disposed. The second glue layer 41 can be formed by a coating process, and those skilled in the art can select the process for forming the second glue layer 41 according to actual requirements.
The step S2 may further include the following steps: before the process of forming the quantum dot light emitting layer, arranging a filter layer 50 on the substrate layer 10 corresponding to the sub-pixel region where the quantum dot light emitting layer 30 is preset; or after the process of forming the quantum dot light emitting layer, the filter layer 50 is disposed on one side of the quantum dot light emitting layer 30 away from the substrate layer 10, the filter layer 50 is located between the quantum dot light emitting layer 30 and the first adhesive layer 40, or the filter layer 50 is located on one side of the first adhesive layer 40 away from the quantum dot light emitting layer 30. The filter layer 50 can filter the light transmitted by the light source through the quantum dot light-emitting layer 30 in a reflective manner, and transmit the photoluminescence of the quantum dot light-emitting layer 30, so that the purity of the emergent light and the utilization rate of the backlight source are improved, and the filter layer 50 can be a dichroic filter.
Those skilled in the art may set the filter layer 50 according to actual requirements, which specifically includes the following three cases: 1. forming the filter layer 50 on the exposed surface of the substrate layer 10, and then forming the quantum dot light-emitting layer 30 on the exposed surfaces of the filter layer 50 and the substrate layer 10; 2. forming the filter layer 50 on the exposed surface of the quantum dot light-emitting layer 30, and then forming a first adhesive layer 40 on the exposed surfaces of the filter layer 50 and the quantum dot light-emitting layer 30; 3. the filter layer 50 is formed on the surface of the first adhesive layer (corresponding to the surface of the sub-pixel region).
In a preferred embodiment, the quantum dot ink is disposed in a partial sub-pixel region in step S2, step S2 further includes a process of forming the above-mentioned second glue layer 41, and after the process of sequentially disposing the first glue layer 40 and the filter layer 50 on the side of the quantum dot light-emitting layer 30 away from the substrate layer 10, the preparation method may further include the steps of: s3, disposing the smoothing layer 60 on the exposed surfaces of the filter layer 50 and the second adhesive layer 41; in another preferred embodiment, after the process of disposing the quantum dot ink in each sub-pixel region and disposing the first glue layer 40 and the filter layer 50 in sequence on the side of the quantum dot light-emitting layer 30 away from the substrate layer 10 in step S2, the preparation method further comprises the following steps: s3, a smoothing layer 60 is disposed on the exposed surface of the filter layer 50.
The smoothing layer 60 serves to equalize the distance from the exposed surface of the smoothing layer 60 to the first surface. Since the filter layer 50 disposed on the quantum dot light emitting layer 30 may be composed of a plurality of filter structures disconnected from each other, the entire structure may be more flat by using the smoothing layer 60; the smoothing layer 60 also serves to protect the quantum dot light-emitting layer 30 and the filter layer 50. Preferably, the material forming the smoothing layer 60 is selected from any one or more of transparent acrylic resin, polyimide resin, and urethane resin; also, it is preferable that the above smoothing layer 60 is formed by spin coating or screen printing.
When the quantum dot light emitting layer 30 is formed by disposing the quantum dot ink in the sub-pixel region and drying the quantum dot ink in the step S2, the filter layer 50 may be directly disposed on the surface of the quantum dot light emitting layer 30, and the smoothing layer 60 may be disposed on the exposed surfaces of the filter layer 50 and the quantum dot light emitting layer 30, so that the first adhesive layer 40 is not required to be disposed on the quantum dot light emitting layer 30, and the protection effect on the quantum dot light emitting layer 30 and the filter layer 50 may be achieved, and the whole structure may be more smooth.
According to another aspect of the present invention, there is provided a display device including a backlight and the above light conversion film. Because the light conversion membrane in the display device comprises the quantum dot light-emitting layer and the first adhesive layer, the quantum dot light-emitting layer is arranged on the substrate layer corresponding to the sub-pixel region, and the first adhesive layer is arranged on one side of the quantum dot light-emitting layer far away from the substrate layer, compared with the prior art that the quantum dots and the photoresist are mixed, the contact area of the quantum dot light-emitting layer and the substrate layer is reduced, the structure is simplified, quenching of glue components to the quantum dots is effectively reduced, and the photoluminescence effect of the light conversion membrane is improved; and, still need to coat one deck protective layer again after mixing quantum dot and glue and solidification molding among the prior art, and this application is through setting up first glue film on the quantum dot layer to need not additionally to add the protective layer again, just can be with quantum dot all sealed in the sub-pixel region, and then the effectual invasion and attack that has blockked water oxygen, improved the display device's that is provided with the light conversion diaphragm reliability.
In the display device of the present invention, a person skilled in the art can reasonably select the light emitting color of the backlight source according to actual requirements, where the backlight source may be a blue light source, and at this time, the quantum dot light emitting layer 30 in the light conversion film includes a red quantum dot layer and a green quantum dot layer; the backlight source may be an ultraviolet light source, and in this case, the quantum dot light emitting layer 30 in the light conversion film sheet includes a red quantum dot layer, a green quantum dot layer, and a blue quantum dot layer.
The light conversion film provided herein and the method for manufacturing the same will be further explained with reference to examples and comparative examples.
Example 1
The method for manufacturing a light conversion film provided by this embodiment includes the following steps:
providing a substrate layer with a pixel isolation structure, wherein the pixel isolation structure is provided with 96 multiplied by 64 sub-pixel areas which are isolated from each other;
the method comprises the following steps of arranging quantum dot ink in a sub-pixel region by adopting an ink-jet printing process and drying the quantum dot ink to form a quantum dot light-emitting layer, wherein the quantum dot ink comprises red quantum dots, green quantum dots and a solvent, the red quantum dots are CdSe/ZnS, the green quantum dots are CdSe/CdS, and the solvent is decane;
arranging glue on exposed surfaces of the quantum dot light-emitting layer and the pixel isolation structure by adopting a spin coating process, and curing the glue to form a first glue layer, wherein the glue is light-cured glue (with the model of loctite 352);
and arranging glue on the substrate layer corresponding to the sub-pixel region without the red quantum dots and the green quantum dots by adopting a spin coating process, and curing the glue to form a second glue layer, wherein the glue is light-cured glue (the model is a loctite 352).
Example 2
The preparation method provided in this example is different from that of example 1 in that:
the glue for forming the first glue layer and the second glue layer is heat-curing glue, the type is JH5510, and the curing temperature is 80 ℃.
Example 3
The preparation method provided in this example is different from that of example 2 in that:
the glue forming the first glue layer and the second glue layer is heat-curing glue (model HS-607UF), and the curing temperature of the heat-curing glue is 120 ℃.
Example 4
The method for manufacturing a light conversion film provided by this embodiment includes the following steps:
providing a substrate layer with a pixel isolation structure, wherein the pixel isolation structure is provided with 96 multiplied by 64 sub-pixel areas which are isolated from each other;
arranging a mixed solution of quantum dot ink and glue in a sub-pixel region by adopting an ink-jet printing process, wherein the mixed solution coated with the red sub-pixel region comprises red quantum dot CdSe/ZnS, a solvent toluene, butanol and a heat-curing glue 5503, and the mixed solution coated with the green sub-pixel region comprises green quantum dot CdSe/CdS, a solvent toluene, butanol and a heat-curing glue 5503;
the mixed solution is arranged in a sub-pixel area and stands, the quantum dots begin to precipitate and separate out and glue layers along with preferential volatilization of toluene, the quantum dot ink forms a quantum dot light-emitting layer after the solvent is volatilized, the glue forms a glue layer to be cured, and the glue layer to be cured is positioned above the quantum dot light-emitting layer;
heating and curing the adhesive layer to be cured at 80 ℃ to form a first adhesive layer;
and arranging glue on the substrate layer corresponding to the sub-pixel region without the red quantum dots and the green quantum dots by adopting a spin coating process, and curing the glue to form a second glue layer, wherein the glue is thermosetting glue 5503.
Example 5
The preparation method provided in this example is different from that of example 1 in that:
before the step of forming the glue layer, a filter layer is formed on the exposed surface of the quantum dot light-emitting layer by adopting a vacuum evaporation process, and the structure of the filter layer is a multilayer structure formed by stacking silicon dioxide and titanium dioxide.
Example 6
The preparation method provided in this example is different from that of example 1 in that:
after the step of forming the glue layer, forming a filter layer on the surface of the glue layer on the filled quantum dots by adopting a vacuum evaporation process, wherein the structure of the filter layer is a multilayer structure formed by stacking silicon dioxide and titanium dioxide, and a smooth layer is formed by spin coating on the exposed surfaces of the filter layer and the pixel isolation structure, and the smooth layer is made of transparent acrylic resin.
Comparative example 1
The method for producing a light conversion film provided by this comparative example includes the steps of:
providing a substrate layer with a pixel isolation structure, wherein the pixel isolation structure is provided with 96 multiplied by 64 sub-pixel areas which are isolated from each other;
spin-coating a mixture of the red quantum dots CdSe/ZnS and the photoresist SU8 to form a film, exposing and developing to obtain a red sub-pixel array;
spin-coating a mixture of the green quantum dots CdSe/CdS and the photoresist SU8 to form a film, exposing and developing to obtain a green sub-pixel array;
arranging glue on the exposed surfaces of the red and green sub-pixel layers and the pixel isolation structure by adopting a spin coating process, and curing the glue to form a glue layer, wherein the glue is photocuring glue (the model is a loctite 352);
the light conversion films of examples 1 to 6 and comparative example 1 were disposed on the light emitting side of a blue electroluminescent device (BLED) comprising a blue LED bead and a light diffusion plate sequentially laminated and encapsulated with epoxy resin, and the light conversion film irradiated with blue backlight was subjected to a spectrum test using a PR670 spectrometer, wherein peaks corresponding to red, green, and blue lights in the spectrum are shown in table 1, wherein the peak of red light is taken from the light intensity (relative intensity) at 624nm, the peak of green light is taken from the light intensity at 532nm, and the peak of blue light is taken from the light intensity at 448 nm:
TABLE 1
| Peak intensity of blue light | Peak intensity of green light | Peak intensity of red light | |
| Example 1 | 0.4775 | 0.1470 | 0.1129 |
| Example 2 | 0.4785 | 0.1481 | 0.1139 |
| Example 3 | 0.4790 | 0.1485 | 0.1144 |
| Example 4 | 0.4765 | 0.1460 | 0.1119 |
| Example 5 | 0.2514 | 0.2231 | 0.1892 |
| Example 6 | 0.2510 | 0.2250 | 0.1893 |
| Comparative example 1 | 0.4712 | 0.0730 | 0.0564 |
As can be seen from the above test results, the light conversion films laminated in examples 1 to 6 can have higher light-induced effects than the light conversion film formed by the blend lithography in comparative example 1; in addition, the light conversion film sheets in examples 5 and 6 are added with the optical filter, so that the optical filter is reflected back to excite the red and green quantum dots to perform photoluminescence, thereby decreasing the blue light peak and increasing the red and green peak.
From the above description, it can be seen that the above-described embodiments of the present invention achieve the following technical effects:
1. compared with the prior art of mixing quantum dots and photoresist, the contact area of the quantum dots and the photoresist is reduced, so that the quenching of the photoresist component to the quantum dots is effectively reduced, and the photoluminescence effect of the light conversion film is improved;
2. because a protective layer is required to be coated after the quantum dots and the glue are mixed, cured and molded in the prior art, the quantum dots can be completely sealed in the sub-pixel region without additionally adding a protective layer by arranging the first glue layer on the quantum dot layer, so that the structure is simplified, the invasion of water and oxygen is effectively blocked, and the reliability of the light conversion film is improved;
3. in the preparation method of the light conversion film, the quantum dot luminescent layer and the adhesive layer do not need a yellow light process, and can be prepared and molded by a common curing process, so that the cost is saved;
4. after the filter layer is arranged in the light conversion film and the light conversion film is arranged on one side of the backlight source, the filter layer in the light conversion film can return the light transmitted by the light source through the quantum dot light emitting layer to the quantum dot layer in a reflection mode and excite the quantum dots to emit light again, so that the photoluminescence efficiency of the light conversion film is improved.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A method of manufacturing a light conversion film, the light conversion film comprising a substrate layer (10) and pixel isolation structures (20) disposed on a first surface of the substrate layer (10), a plurality of sub-pixel regions isolated from each other being formed between the pixel isolation structures (20), the light conversion film further comprising: the quantum dot light-emitting layer (30) is arranged on the substrate layer (10) corresponding to at least part of the sub-pixel regions; the first glue layer (40), first glue layer (40) sets up in the quantum dot luminescent layer (30) keep away from one side of first surface, its characterized in that includes the following step:
s1, providing a substrate layer (10) with pixel isolation structures (20), wherein a plurality of mutually isolated sub-pixel regions are formed between the pixel isolation structures (20);
s2, arranging quantum dot ink and glue in at least part of the sub-pixel area, forming the quantum dot light-emitting layer (30) and a first glue layer (40) which are independent of each other, wherein the first glue layer (40) is positioned on one side of the quantum dot light-emitting layer (30) far away from the substrate layer (10), and the step S2 comprises the following processes:
forming a mixed solution of the quantum dot ink and the glue;
arranging the mixed solution in at least part of the sub-pixel area and standing to enable the quantum dot ink and the glue to be layered, wherein the quantum dot ink forms a quantum dot light-emitting layer (30), the glue forms a glue layer to be cured, and the glue layer to be cured is positioned above the quantum dot light-emitting layer (30);
and curing the glue layer to be cured to form the first glue layer (40).
2. The method of claim 1, wherein the glue is a heat-curable glue.
3. The method of claim 1, wherein the curing temperature is 120 ℃.
4. The method of claim 1, wherein the curing temperature is 80 ℃ or less.
5. The production method according to any one of claims 1 to 4, wherein the mixed solution is provided in the sub-pixel region by ink-jet printing or screen printing.
6. The production method according to any one of claims 1 to 4, wherein the step S2 further includes a process of:
before the process of forming the quantum dot light-emitting layer (30), arranging a filter layer (50) on the base material layer (10) corresponding to the sub-pixel region where the quantum dot light-emitting layer (30) is preset; or
After the process of forming the quantum dot light-emitting layer (30), a filter layer (50) is arranged on one side of the quantum dot light-emitting layer (30) far away from the substrate layer (10), wherein the filter layer (50) is positioned between the quantum dot light-emitting layer (30) and the first adhesive layer (40), or the filter layer (50) is positioned on one side of the first adhesive layer (40) far away from the quantum dot light-emitting layer (30).
7. The manufacturing method according to claim 6, wherein quantum dot ink is provided in a part of the sub-pixel region in the step S2, the step S2 further comprises a process of providing the glue on the substrate layer (10) corresponding to the sub-pixel region where the quantum dot light-emitting layer (30) is not provided and curing to form a second glue layer (41), and after the process of sequentially providing the first glue layer (40) and the filter layer (50) on the side of the quantum dot light-emitting layer (30) away from the substrate layer (10), the manufacturing method further comprises the steps of:
s3, a smoothing layer (60) is arranged on the exposed surfaces of the filter layer (50) and the second adhesive layer (41).
8. The production method according to claim 6, wherein, after a process of disposing the first glue layer (40) and the filter layer (50) in this order on the side of the quantum dot light-emitting layer (30) away from the base material layer (10) in each of the sub-pixel regions by disposing a quantum dot ink in the step S2, the production method further comprises the steps of:
s3, a smoothing layer (60) is arranged on the exposed surface of the filter layer (50).
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