CN112701167B - Polyimide-based membrane material, preparation method and application - Google Patents
Polyimide-based membrane material, preparation method and application Download PDFInfo
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- CN112701167B CN112701167B CN202011552032.4A CN202011552032A CN112701167B CN 112701167 B CN112701167 B CN 112701167B CN 202011552032 A CN202011552032 A CN 202011552032A CN 112701167 B CN112701167 B CN 112701167B
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- 239000004642 Polyimide Substances 0.000 title claims abstract description 56
- 229920001721 polyimide Polymers 0.000 title claims abstract description 56
- 239000000463 material Substances 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000012528 membrane Substances 0.000 title abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 27
- 230000003471 anti-radiation Effects 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 75
- 238000004140 cleaning Methods 0.000 claims description 15
- 239000002994 raw material Substances 0.000 claims description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 239000012790 adhesive layer Substances 0.000 claims description 7
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 6
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000005452 bending Methods 0.000 abstract description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000007747 plating Methods 0.000 description 5
- 230000014759 maintenance of location Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011895 specific detection Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/041—Provisions for preventing damage caused by corpuscular radiation, e.g. for space applications
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The invention provides a polyimide-based membrane material, a preparation method and application. A polyimide-based film material comprises a polyimide layer, an adhesion layer, an anti-radiation layer and an anti-reflection layer which are sequentially arranged. The polyimide-based film material provided by the invention has the advantages of irradiation resistance, anti-reflection performance and flexibility, and can be applied to the field of flexible space solar energy. Compared with an ultrathin glass cover plate, the polyimide-based film material is used as the cover plate, so that the bending performance of the solar cell is improved, and the solar cell is not easy to damage.
Description
Technical Field
The invention belongs to the field of solar cells, and particularly relates to a polyimide-based membrane material, a preparation method and application.
Background
Energy is an important foundation for the existence and development of human society. With the increasing demand of human society for energy, the development and utilization of renewable energy is urgent. Solar energy is an inexhaustible new energy, and a solar cell is an important way for people to utilize solar energy. Solar cells can convert unlimited, clean solar energy into electrical energy, and are an important medium for human to utilize solar energy.
The solar cell can be divided into a rigid solar cell and a flexible solar cell according to forms, wherein the flexible solar cell has the advantages of being bendable, high in power-weight ratio and the like compared with the rigid solar cell, and is suitable for the use requirement of space equipment.
At present, the rigid glass doped with Ce is often used as a cover plate attached to the surface of the solar cell for resisting irradiation of protons, atomic oxygen, ultraviolet rays and the like. However, if the glass cover plate is applied to a flexible solar cell, the glass cover plate needs to be thinned to obtain partial flexibility, but the ultrathin glass cover plate is difficult to manufacture and is very easy to damage, and the advantage of the flexible solar cell cannot be fully reflected by the limit bending radius of the ultrathin glass cover plate.
The polyimide material has the advantages of excellent comprehensive performance, multiple processing methods, multiple synthesis ways, wide application fields and the like, but if the common polyimide material is used as the cover plate, the common polyimide material is gradually thinned due to the corrosion of atomic oxygen in the space environment, so that the protective effect on the solar cell is lost, and the overall performance of the solar cell is finally reduced.
Disclosure of Invention
The present invention is directed to solving at least one of the above problems in the prior art. To this end, a first aspect of the present invention provides a polyimide-based film material.
The second aspect of the invention provides a preparation method of a polyimide-based film material.
The third aspect of the invention provides an application of a polyimide-based film material.
A polyimide-based film material comprises a polyimide layer, an adhesion layer, an anti-radiation layer and an anti-reflection layer which are sequentially arranged.
According to some embodiments of the invention, the polyimide layer has a thickness of 25 μm to 200 μm.
According to some embodiments of the invention, the adhesive layer is made of: at least one of Ti, Ni, Pt, Indium Tin Oxide (ITO) and aluminum-doped zinc oxide (AZO).
According to some embodiments of the invention, the adhesion layer has a thickness of 1nm to 50 nm.
And a dangling bond exists on the surface of the polyimide layer, so that bonding adhesion exists between the polyimide layer and the adhesion layer.
According to some embodiments of the invention, the raw material of the irradiation-resistant layer is Ce-doped glass frit.
According to some preferred embodiments of the present invention, the Ce-doped glass frit comprises Al as a component2O3、B2O3、SiO2And CeO2。
According to some preferred embodiments of the inventionThe Ce-doped glass powder comprises 0.5-1.5% of Al in percentage by mass2O314 to 16 percent of B2O378% -80% of SiO2And 4 to 6 percent of CeO2。
According to some preferred embodiments of the present invention, the Ce-doped glass frit includes 1% by mass of Al2O315% of B2O379% SiO2And 5% of CeO2。
The Ce-doped glass powder is used as a raw material for plating to form a flexible film-shaped material as an anti-irradiation layer, so that the advantage of the anti-irradiation performance of the Ce-doped rigid glass is inherited; on the other hand, the film-shaped material with flexibility improves the flexibility of the polyimide-based film material, and can be applied to flexible solar cells.
In the anti-irradiation layer, the Ce-doped glass powder can prevent the solar cell from being damaged by low-energy protons after forming a film; the purpose of doping Ce is to ensure the transmittance of light, and the action mechanism is to avoid the generation of color centers by the bombardment of protons against the irradiation layer.
According to some embodiments of the invention, the radiation-resistant layer has a thickness of 1 μm to 50 μm.
The polyimide layer is organic material, and is relatively poor with the bonding nature between the Ce-doped glass powder on anti-irradiation layer, consequently need set up the adhesion coating between the two to increase the viscidity between the two, promote the life of polyimide base membrane material.
According to some embodiments of the invention, the refractive index of the antireflective layer for 550nm light is ≦ 1.54.
According to some preferred embodiments of the present invention, the material of the anti-reflection layer is: MgF2。
According to some embodiments of the invention, the thickness of the antireflection layer is 50nm to 200 nm.
The light is a wave with interference, and the antireflection film has the action principle that when the thickness of the antireflection film is equal to one quarter of the wavelength of the light, the light reflected back from two sides of the antireflection film interferes, so that the light is mutually counteracted, namely the light completely passes through the antireflection film. That is, the antireflection film functions to reduce the intensity of reflected light on the surface of the antireflection film, increase the intensity of transmitted light, and further increase the utilization rate of light.
The anti-radiation layer exists in a film shape, and can play a role in anti-reflection when the thickness is equal to one quarter of the wavelength of light.
The irradiation-resistant layer and the anti-reflection layer are matched with each other, so that the light transmittance is increased on the premise that the polyimide layer is not damaged by irradiation.
A preparation method of a polyimide-based film material comprises the following steps:
s1, cleaning a polyimide layer raw material;
s2, arranging an adhesive layer on the surface of the material obtained in the step S1;
s3, arranging an anti-irradiation layer on the surface of one side, far away from the polyimide layer, of the adhesion layer;
and S4, arranging an anti-reflection layer on the surface of one side, far away from the polyimide layer, of the anti-radiation layer.
According to some embodiments of the invention, in step S1, the cleaning is performed by: cleaning with acetone and then plasma.
According to some embodiments of the present invention, the purpose of cleaning with acetone is to remove organic stains on the surface with wet cleaning, so as to ensure the adhesion of the subsequent adhesion layer evaporation.
According to some preferred embodiments of the invention, the plasma is Ar and O2Plasma of the mixed gas.
O2The formed plasma can effectively remove organic dirt on the surface of the raw material of the polyimide layer.
The plasma formed by Ar bombards the surface of the raw material of the polyimide layer, and dangling bonds are easily formed.
According to some embodiments of the present invention, for the purpose of plasma cleaning, on one hand, the surface contamination is further removed, and the adhesion of the subsequent adhesion layer evaporation is improved; on the other hand, the surface state of the polyimide layer raw material is changed, a dangling bond is increased, and the adhesion is improved.
According to some embodiments of the invention, in steps S2-S4, the method comprises: one of plasma-assisted deposition, electron beam evaporation coating, thermal evaporation coating or magnetron sputtering coating.
An application of polyimide-based film material in the field of solar cells.
An application of polyimide-based membrane material in the field of flexible solar cell cover plates.
Compared with the prior art, the invention has at least the following beneficial effects.
(1) The polyimide-based film material has excellent radiation resistance, permeability increasing performance and flexibility, and can be applied to the field of flexible space solar energy.
(2) Compared with an ultrathin glass cover plate, the polyimide-based film material is used as the cover plate, so that the bending performance of the solar cell is improved, and the solar cell is not easy to damage.
Drawings
Fig. 1 is a schematic view of the polyimide-based film material obtained in example 1.
Description of the figure numbers:
100. a polyimide layer; 200. an adhesive layer; 300. an anti-irradiation layer; 400. and an anti-reflection layer.
Detailed Description
The following are specific examples of the present invention, and the technical solutions of the present invention will be further described with reference to the examples, but the present invention is not limited to the examples.
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, if there are first, second, third, etc. described only for the purpose of distinguishing technical features, it is not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, it should be understood that the orientation or positional relationship referred to in the description of the orientation, such as the upper, lower, left, right, etc., is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplicity of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that unless otherwise explicitly defined, terms such as arrangement, installation, connection and the like should be broadly understood, and those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific contents of the technical solutions.
Example 1
The preparation method of the polyimide-based film material comprises the following steps:
s1, cleaning a polyimide layer raw material: cleaning with acetone, and then cleaning with Ar and O2Cleaning the plasma;
s2, setting an adhesion layer: plating a layer of Ti with the thickness of 5nm as an adhesion layer on the surface of the polyimide layer raw material obtained in the step S1 by a thermal evaporation plating method;
s3, setting an anti-irradiation layer: coating a 30-micron thick anti-radiation layer on the surface of the adhesive layer obtained in step S2 by using Ce-doped glass powder as a raw material by using a plasma-assisted deposition method, wherein the Ce-doped glass powder contains 1% of Al by mass2O315% of B2O379% SiO25% of CeO2；
S4, arranging an anti-reflection layer: arranging a layer of 50nm MgF on the surface of the anti-radiation layer obtained in the step S32As an anti-reflection layer.
Example 2
The preparation method of the polyimide-based film material comprises the following steps:
s1, cleaning a polyimide layer raw material: firstly using acetone for cleaningAfter using Ar, O2Cleaning the plasma;
s2, setting an adhesion layer: plating a layer of AZO with the thickness of 5nm as an adhesion layer on the surface of the raw material of the polyimide layer obtained in the step S1 by a magnetron sputtering film plating method;
s3, setting an anti-irradiation layer: coating a 30-micron thick anti-radiation layer on the surface of the adhesive layer obtained in step S2 by using Ce-doped glass powder as a raw material by using a plasma-assisted deposition method, wherein the Ce-doped glass powder contains 1% of Al by mass2O315% of B2O379% SiO25% of CeO2；
S4, arranging an anti-reflection layer: arranging a layer of 50nm MgF on the surface of the anti-radiation layer obtained in the step S32As an anti-reflection layer.
Test example
In the test example, the polyimide-based film material obtained in the examples 1 to 2 and the Ce-doped glass plate were used as the cover plate, respectively, to manufacture the gallium arsenide solar cell, and the performance of the gallium arsenide solar cell relative to the cover plate was tested. Specific detection methods and detection results are as follows.
The detection method comprises the following steps:
D1. the polyimide-based film material obtained in the example 1-2 and the Ce-doped glass plate are placed in an electron irradiation field formed by an ELV-8 type electron accelerator, and the integral flux of the electron irradiation is 1015e/cm2；
D2. Testing the relevant performance of the gallium arsenide solar cell without a cover plate on a Japanese WACOM solar simulator;
D3. taking the polyimide-based film material treated in the step D1 and the Ce-doped glass plate as cover plates, and combining the cover plates with the gallium arsenide solar cell tested in the step D2 to form a gallium arsenide solar cell;
D4. testing the related performance of the gallium arsenide solar cell obtained by D3 on a Japanese WACOM solar simulator;
D5. and (3) calculating the retention rate of each property after the cover plate is added, wherein the calculation formula is shown as the formula (1):
retention rate is D4 performance value/D2 performance value × 100% (1).
The results of the relevant property retention are shown in table 1.
Table 1 results for the relative performance retention after coverplate application.
| Isc | Voc | FF | Eff | Vmpp | Impp | |
| Example 1 | 99.29％ | 88.06％ | 95.90％ | 83.86％ | 86.25％ | 97.23％ |
| Example 2 | 99.27％ | 88.03％ | 95.92％ | 83.85％ | 86.28％ | 97.20％ |
| Glass cover plate | 98.57％ | 88.35％ | 97.81％ | 85.17％ | 87.60％ | 97.23％ |
Wherein:
voc represents an open circuit voltage;
isc represents the short circuit current;
vmpp denotes an optimum operating voltage;
impp denotes the optimum operating current;
FF represents a fill factor;
eff represents efficiency.
The results in table 1 show that the polyimide-based film materials obtained in examples 1-2 have radiation resistance and anti-reflection performance equivalent to those of the Ce-doped glass plates. Compared with a Ce-doped glass plate, the polyimide-based film material provided by the invention has more excellent flexibility, can effectively improve the bending performance of a solar cell when being used as a cover plate, and is not easy to damage.
The present invention has been described in detail with reference to the embodiments, but the present invention is not limited to the embodiments described above, and various changes can be made within the knowledge of those skilled in the art without departing from the gist of the present invention.
Claims (4)
1. A polyimide-based film material is characterized by comprising a polyimide layer, an adhesion layer, an anti-radiation layer and an anti-reflection layer which are arranged in sequence;
the adhesive layer is made of the following materials: at least one of Ti, Ni, Pt, indium tin oxide, and aluminum-doped zinc oxide;
the raw material of the anti-irradiation layer is Ce-doped glass powder;
the Ce-doped glass powder comprises 0.5-1.5% of Al by mass percent2O314 to 16 percent of B2O378% -80% of SiO2And 4 to 6 percent of CeO2；
The thickness of the anti-irradiation layer is 1-50 μm;
the refractive index of the anti-reflection layer for 550nm light is less than or equal to 1.54;
the preparation method of the polyimide-based film material comprises the following steps:
s1, cleaning a polyimide layer raw material;
s2, arranging an adhesive layer on the surface of the material obtained in the step S1;
s3, arranging an anti-irradiation layer on the surface of one side, far away from the polyimide layer, of the adhesion layer;
s4, arranging an anti-reflection layer on the surface of one side, far away from the polyimide layer, of the anti-radiation layer;
in steps S2 and S4, the setting method is: one of plasma-assisted deposition, electron beam evaporation coating, thermal evaporation coating or magnetron sputtering coating;
in step S3, the setting method includes: plasma assisted deposition.
2. The polyimide-based film material of claim 1, wherein the adhesion layer has a thickness of 1nm to 50 nm.
3. The polyimide-based film material of claim 1, wherein in step S1, the cleaning is performed by: cleaning with acetone and then plasma.
4. An application of the polyimide-based film material according to any one of claims 1 to 3 in the field of solar cells.
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| CN202307943U (en) * | 2011-06-28 | 2012-07-04 | 光为绿色新能源股份有限公司 | Self-cleaning photovoltaic assembly with anti-reflection film |
| US8974899B1 (en) * | 2011-05-24 | 2015-03-10 | The United States Of America As Represented By The Secretary Of The Air Force | Pseudomorphic glass for space solar cells |
| CN105355692A (en) * | 2015-11-20 | 2016-02-24 | 福州顺升科技有限公司 | Anti-aging high resistance solar cell panel back film and preparation method thereof |
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| KR100662534B1 (en) * | 1999-07-15 | 2006-12-28 | 가부시키가이샤 도모에가와 세이시쇼 | Method for forming single-layered powder coating film |
| US20090325340A1 (en) * | 2008-06-30 | 2009-12-31 | Mohd Aslami | Plasma vapor deposition system and method for making multi-junction silicon thin film solar cell modules and panels |
| DE112013006831T5 (en) * | 2013-03-15 | 2015-12-10 | Schott Glass Technologies (Suzhou) Co., Ltd. | Chemically toughened flexible ultra-thin glass |
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| CN105355692A (en) * | 2015-11-20 | 2016-02-24 | 福州顺升科技有限公司 | Anti-aging high resistance solar cell panel back film and preparation method thereof |
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