CN112687749A - Fast recovery diode and manufacturing method thereof - Google Patents
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Abstract
The application relates to a fast recovery diode and a manufacturing method thereof, belonging to the technical field of semiconductor devices. The application provides a fast recovery diode, comprising a substrate of a first conductivity type; an anode region of a second conductivity type over the substrate; wherein, a doping area of the first conductive type is embedded in the anode area; an anode metal layer located over the anode region; a cathode region of the first conductivity type located under the substrate; the cathode metal layer positioned below the cathode region is introduced into the doped region of the first conductivity type in the anode region of the second conductivity type, so that the contact between the surface of the anode region and metal is not influenced, and the doped region of the first conductivity type can inhibit the hole injection efficiency of the anode region when the fast recovery diode is conducted; when the fast recovery diode is turned off, the doped region of the first conduction type can generate electrons, so that holes in the body region are quickly compounded, the purpose of reducing turn-off loss of the device is achieved, and the performance of the device is improved.
Description
Technical Field
The disclosure relates to the technical field of semiconductor devices, in particular to a fast recovery diode and a manufacturing method thereof.
Background
Fast Recovery Diode (FRD) is a semiconductor Diode with good switching characteristics and short reverse Recovery time, and can be widely applied to medium-low voltage, high-voltage and ultrahigh-voltage fields of electric power systems, locomotive traction and the like because it can play roles of freewheeling, buffering, absorbing and the like in electric power electronic circuits and can play a role of rectification in high-frequency electric power electronic circuits.
The internal structure of the fast recovery diode is different from that of a general PN junction diode, and belongs to a PIN junction diode, and fig. 1 shows a conventional fast recovery diode 10, which mainly includes an N-type lightly doped substrate 13, a P-type anode region 14 located above the N-type lightly doped substrate 13, an anode metal layer 15 located in the P-type anode region 14, and an N-type heavily doped cathode region 12 and a cathode metal layer 11 located below the N-type lightly doped substrate 13. When the fast recovery diode 10 is turned on, holes in the P-type anode region 14 and electrons in the N-type heavily doped cathode region 12 are respectively injected into the N-type lightly doped substrate 13 and are recombined in the N-type lightly doped substrate 13, so that a conductance modulation effect is generated. When the fast recovery diode 10 is turned off, holes are extracted from the anode metal layer 15, and electrons are extracted from the cathode metal layer 11. Since the body region of the fast recovery diode has a large number of hole-electron pairs, the extraction takes a long time, and the turn-off loss of the device is high. The P-type anode region generally adopts a low-doped P-type semiconductor, so that the injection of holes can be reduced, but the ohmic contact between an anode metal layer and a semiconductor layer is poor, and the loss of the fast recovery diode after conduction is overhigh.
Disclosure of Invention
To overcome at least some of the problems of the related art, the present application provides a fast recovery diode and a method for fabricating the same, so as to reduce turn-off loss of the device while suppressing hole injection in the anode region.
In order to achieve the purpose, the following technical scheme is adopted in the application:
in a first aspect, the present application provides a fast recovery diode comprising a substrate of a first conductivity type; an anode region of a second conductivity type over the substrate; a doped region of a first conductivity type is embedded in the anode region; an anode metal layer over the anode region; a cathode region of a first conductivity type located under the substrate; a cathode metal layer located below the cathode region.
Further, the doped region is in contact with the anode metal layer, or the doped region is in contact with the substrate.
Further, the doped region is not in contact with the anode metal layer and the substrate.
Further, a buffer layer of the first conductivity type having a doping concentration higher than that of the substrate and lower than that of the cathode region is disposed between the cathode region and the substrate.
Further, the doped region comprises a plurality of island-shaped doped regions which are arranged at intervals.
Further, the orthographic projection of the island-shaped doped region on the substrate is in one or more of a rectangle, a circle or a polygon.
Further, the doped region comprises a plurality of annular sub-doped regions arranged at intervals.
Further, the annular sub-doping regions are concentric annular.
In a second aspect, the present application provides a method for manufacturing the above fast recovery diode, including:
providing a substrate of a first conductivity type; forming an anode region of a second conductivity type over the substrate; forming a cathode region of a first conductivity type under the substrate; forming a first conductive type doped region in the anode region; forming an anode metal layer over the anode region; a cathode metal layer is formed below the cathode region.
This application adopts above technical scheme, possesses following beneficial effect at least:
this application can effectively restrain the positive pole district hole injection through the doping area who introduces first conductivity type at the positive pole district of second conductivity type to when reverse recovery fast recombination district body cavity, reduce fast recovery diode reverse recovery loss, do not influence fast recovery diode surface metal semiconductor contact effect, and simple in preparation technology, it is convenient to implement, and the practicality is strong.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a fast recovery diode in the prior art;
2a-2c are schematic diagrams of cross-sectional structures of fast recovery diodes shown in exemplary embodiments of the present application;
FIGS. 3a-3c are schematic diagrams of fast recovery diodes according to another embodiment of the present application;
fig. 4 is a schematic diagram of a top view of a fast recovery diode according to another embodiment of the present application;
fig. 5 is a schematic diagram of a top view of a fast recovery diode according to another embodiment of the present application;
FIG. 6 is a schematic flow chart illustrating a method for fabricating a fast recovery diode according to the present application;
in the drawings, like parts are designated with like reference numerals, and the drawings are not drawn to scale.
Detailed Description
Embodiments of the present disclosure will be described in detail with reference to the accompanying drawings and examples, so that how to apply technical means to solve technical problems and achieve the corresponding technical effects can be fully understood and implemented. The embodiments and the features of the embodiments of the present disclosure can be combined with each other without conflict, and the formed technical solutions are all within the protection scope of the present disclosure. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.
It will be understood that spatial relationship terms, such as "above", "below", "beneath", and the like, may be used herein for ease of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" other elements would then be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "under" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
Embodiments of the present disclosure are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the present disclosure. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present disclosure should not be limited to the particular shapes of regions illustrated herein, but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region shown as a rectangle will typically have rounded or curved features and/or implant concentration gradients at its edges rather than a binary change from implanted to non-implanted region. Also, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation is performed. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present disclosure.
In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. The following detailed description of the preferred embodiments of the present disclosure, however, the present disclosure may have other embodiments in addition to these detailed descriptions.
In the present application, the first conductivity type and the second conductivity type are opposite. The following embodiments are described by taking the first conductive type as N-type and the second conductive type as P-type as an example.
Example one
The present embodiment provides a fast recovery diode 20.
As shown in fig. 2a, the fast recovery diode 20 includes a substrate 23, an anode region 24, an N-type doped region 26, an anode metal layer 25, a cathode region 22, and a cathode metal layer 21.
A substrate 23 made of a lightly doped N-type semiconductor, a cathode region 22 made of a heavily doped N-type semiconductor is formed below the substrate 23, and an anode region 24 made of a P-type semiconductor is formed above the substrate 23, wherein in order to reduce the injection of holes, a low doped P-type semiconductor is generally used as the anode region 24, and the N-type doped region 26 is embedded in the anode region 24; an anode metal layer 25 is formed above the anode region 24 (on the side away from the substrate 23), and a cathode metal layer 21 is formed below the cathode region 22 (on the side away from the substrate 23).
The specific position of the N-type doped region 26 may float within the anode region 24 as shown in fig. 2a and is not in contact with the anode metal layer 25 and the substrate 23, or may be in contact with the anode metal layer 24 as shown in fig. 2b (i.e., the upper surface of the N-type doped region 26 is flush with the upper surface of the anode region 24) but is not in contact with the substrate 23; alternatively, as shown in fig. 2c, the N-type doped region 26 may be in contact with the substrate 23 (i.e., the lower surface of the N-type doped region 26 is flush with the lower surface of the anode region 24) without being in contact with the anode metal layer 24. The skilled person can control the N-type doped region 26 to be located at a specific position of the substrate 23 by adjusting the doping process, for example, adjusting and controlling the ion implantation energy, which will not be described in detail herein. As long as the junction depth of the N-type region is reasonably set, the voltage resistance of the device is not influenced.
It should be noted that, in the present application, the N-type doped region may be a continuous integral structure, may be composed of a plurality of isolated island-shaped structures, or may be a combination of the two.
The embodiment provides a fast recovery diode, comprising a substrate of a first conductive type; an anode region of a second conductivity type over the substrate; a doped region of a first conductivity type is embedded in the anode region; an anode metal layer over the anode region; a buffer layer of a first conductivity type located under the substrate; a cathode region located under the buffer layer; a cathode metal layer located below the cathode region. The doped region in the anode region does not influence the contact between the surface of the anode region and metal, and can inhibit the hole injection efficiency of the anode region when the fast recovery diode is conducted; when the fast recovery diode is turned off, the doped region can generate electrons, so that holes in the body region are quickly compounded, the purpose of reducing turn-off loss of the device is achieved, and the performance of the device is improved.
Example two
The present embodiment provides a fast recovery diode 30.
Referring to fig. 3a, the fast recovery diode 30 includes a substrate 33, an anode region 34, an N-type doped region 36, an anode metal layer 35, a buffer layer 37, a cathode region 32, and a cathode metal layer 31.
A substrate 33 made of a lightly doped N-type semiconductor, a cathode region 32 made of a heavily doped N-type semiconductor is formed below the substrate 33, an N-type semiconductor buffer layer 37 with the doping concentration lower than that of the cathode region 32 and higher than that of the substrate 33 is arranged between the cathode region 32 made of the heavily doped N-type semiconductor and the substrate 33 made of the lightly doped N-type semiconductor, so that the gradient change of the N-type doping concentration is formed, and the loss of the fast recovery diode after conduction can be reduced; an anode region 34 formed by a P-type semiconductor is formed above the substrate 33, and an N-type doped region 36 is embedded in the anode region 34; an anode metal layer 35 is formed above the anode region 34 (on the side away from the substrate 33), and a cathode metal layer 21 is formed below the cathode region 32 (on the side away from the substrate 33).
On the basis of fig. 3b, which is a top view of the fast recovery diode 30 shown in fig. 3a, the doped region 36 includes a plurality of island-shaped doped sub-regions 361 arranged at intervals, and as an implementation manner, the plurality of island-shaped doped sub-regions 361 are uniformly distributed at intervals in the horizontal extension direction (X and Y directions) of the anode region 34.
As a variation of this embodiment, as shown in fig. 3c, a plurality of island-shaped sub-doped regions 361 are uniformly spaced in the vertical extension direction (X and Z directions) of the anode region; the island-shaped doped regions 361 may also be uniformly spaced within the three-dimensional spatial range of the anode region 34, i.e., uniformly spaced in both the horizontal and vertical extension directions of the anode region 34.
It should be noted that the plurality of island-shaped doped regions 361 may also be unevenly distributed in the horizontal extension direction (X and Y directions) of the anode region 34 and/or in the vertical extension direction (X and Z directions) of the anode region; those skilled in the art can adjust different process parameters, such as adjusting different ion implantation energies, through multiple doping processes to form a plurality of N-type doped regions 36 at different positions or depths, which will not be described in detail herein.
Further, in this embodiment, as shown in fig. 3b, the orthographic projection of each island-shaped doped region 361 on the anode region is one or more of rectangular, circular or polygonal, and those skilled in the art can select masks with different opening shapes to form different orthographic projection shapes of the N-type doped region when performing the ion implantation process.
The embodiment provides a fast recovery diode, comprising a substrate of a first conductive type; an anode region of a second conductivity type over the substrate; a doped region of a first conductivity type is embedded in the anode region; an anode metal layer over the anode region; a buffer layer of a first conductivity type located under the substrate; a cathode region located under the buffer layer; a cathode metal layer located below the cathode region. The doped region in the anode region does not influence the contact between the surface of the anode region and metal, and can inhibit the hole injection efficiency of the anode region when the fast recovery diode is conducted; when the fast recovery diode is turned off, the doped region can generate electrons, so that holes in the body region are quickly compounded, the purpose of reducing turn-off loss of the device is achieved, and the performance of the device is improved.
EXAMPLE III
Referring to fig. 4, fig. 4 is a schematic top view of the fast recovery diode 40 shown in the present embodiment, in which the doped region 46 includes a plurality of annular sub-doped regions 46a to 46d arranged at intervals; further, the plurality of ring-shaped sub-doping regions 46a to 46d are arranged at intervals and are concentric rings.
The cross-sectional structure of the fast recovery diode 40 is the same as that of the first or second embodiment, and is not described herein again.
Example four
Fig. 5 is a schematic top view of the fast recovery diode 50 shown in this embodiment, in which the doped region 56 is in a grid shape.
The cross-sectional structure of the fast recovery diode 50 is the same as that of the first or second embodiment, and thus, the description thereof is omitted.
It should be noted that the features of the doped regions in the embodiments of the fast recovery diode described above can be selectively combined with each other in a suitable manner, and are not illustrated here.
EXAMPLE five
As shown in fig. 6, the present application provides a method for manufacturing a fast recovery diode, including:
providing a substrate of a first conductivity type;
forming an anode region of a second conductivity type over the substrate;
forming a cathode region of a first conductivity type under a substrate;
forming a doped region of a first conductivity type in the anode region;
forming an anode metal layer over the anode region;
a cathode metal layer is formed under the cathode region.
In addition, before forming the cathode region of the first conductivity type, forming a buffer layer of the first conductivity type having a doping concentration lower than that of the cathode region and higher than that of the substrate under the substrate may be further included.
Specifically, a substrate of an N-type semiconductor is provided, and a P-type anode region is formed over (on one side of) the substrate by epitaxial growth. A lightly doped N-type buffer layer and a heavily doped N-type cathode region are formed under (on the other side of) the substrate. After the P-type anode region is formed, an N-type doped region is embedded in the P-type anode region through an ion implantation process.
Specifically, the corresponding doped region includes a plurality of island-shaped doped regions arranged at intervals, and when ions are implanted, a mask including a plurality of openings spaced from each other is selected, each opening corresponds to a position of one island-shaped doped region, and of course, the shape of the opening may be selected according to the shape of the island-shaped doped region, for example, the shape of the opening is one or more of a rectangle, a circle, or a polygon.
The depth control of the doped region is controlled by adjusting the ion implantation energy, and the deeper the depth of the doped region is, the larger the required ion implantation energy is. For example, the ion implantation energy of the doped region located on the lower surface of the anode region and in contact with the substrate is greater than the ion implantation energy of the doped region floating inside the anode region (not in contact with the substrate and the anode metal layer), and the ion implantation energy of the doped region floating inside the anode region is greater than the ion doping concentration of the doped region located on the upper surface of the anode region and in contact with the anode metal layer.
It should be noted that, for the possible combinations of the features of the different doped regions in the aforementioned fast recovery diode, the possible combinations can be achieved by adjusting the position and shape of the opening of the ion implantation mask during ion implantation and the process conditions such as the ion implantation energy according to specific shapes, positions and junction depths, and will not be described in detail herein.
Although embodiments of the present application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present application, and that variations, modifications, substitutions and alterations may be made to the above embodiments by those of ordinary skill in the art within the scope of the present application.
Claims (10)
1. A fast recovery diode, comprising:
a substrate of a first conductivity type;
an anode region of a second conductivity type over the substrate; a doped region of a first conductivity type is embedded in the anode region;
an anode metal layer over the anode region;
a cathode region of a first conductivity type located under the substrate;
a cathode metal layer located below the cathode region.
2. The fast recovery diode of claim 1, wherein the doped region is in contact with the anode metal layer or the doped region is in contact with the substrate.
3. The fast recovery diode of claim 1, wherein the doped region is not in contact with the anode metal layer and the substrate.
4. The fast recovery diode of claim 1 wherein a buffer layer of the first conductivity type having a higher doping concentration than the substrate and lower than the cathode region is disposed between the cathode region and the substrate.
5. The fast recovery diode of any of claims 1 to 4 wherein the doped region comprises a plurality of spaced apart island-shaped sub-doped regions.
6. The fast recovery diode of claim 5 wherein an orthographic projection of the island-like sub-doped region on the substrate is one or more of rectangular, circular or polygonal.
7. The fast recovery diode of any of claims 1 to 4 wherein the doped region comprises a plurality of spaced apart ring-shaped sub-doped regions.
8. The fast recovery diode of claim 7 wherein the ring shaped sub-doped region is in the shape of concentric rings.
9. The fast recovery diode of any of claims 1 to 4 wherein the doped region is in the form of a grid.
10. A method for manufacturing a fast recovery diode is characterized by comprising the following steps:
providing a substrate of a first conductivity type;
forming an anode region of a second conductivity type over the substrate;
forming a cathode region of a first conductivity type under the substrate;
forming a doped region of a first conductivity type in the anode region;
forming an anode metal layer over the anode region;
a cathode metal layer is formed below the cathode region.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113903814A (en) * | 2021-12-13 | 2022-01-07 | 浙江大学杭州国际科创中心 | Fast turn-on diode and manufacturing method |
| CN116153969A (en) * | 2023-03-03 | 2023-05-23 | 深圳吉华微特电子有限公司 | High-voltage fast recovery diode resistant to single particle burning and manufacturing method thereof |
| WO2023193342A1 (en) * | 2022-04-07 | 2023-10-12 | 苏州东微半导体股份有限公司 | Semiconductor diode and manufacturing method therefor |
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