CN112663025A - Atomic layer deposition device for powder - Google Patents
Atomic layer deposition device for powder Download PDFInfo
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- CN112663025A CN112663025A CN202011285337.3A CN202011285337A CN112663025A CN 112663025 A CN112663025 A CN 112663025A CN 202011285337 A CN202011285337 A CN 202011285337A CN 112663025 A CN112663025 A CN 112663025A
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Abstract
The invention provides a powder atomic layer deposition device which mainly comprises a vacuum cavity, a shaft sealing device and a driving unit. The shaft seal device comprises an outer tube body and an inner tube body, wherein the inner tube body extends from the accommodating space of the outer tube body to the reaction space of the vacuum cavity body, and a protruding tube part is formed in the reaction space. The driving unit drives the vacuum cavity to rotate through the outer pipe body so as to stir the powder in the reaction space. The ratio of the length to the width of the protruding tube to the reaction space is in a specific range, so that the non-reactive gas delivered to the reaction space lifts the powder in the reaction space and diffuses the powder to each region of the reaction space, thereby facilitating the formation of a film with uniform thickness on the surface of the powder.
Description
Technical Field
The invention relates to an atomic layer deposition device of powder, wherein the length-width ratio of a projection pipe part in a reaction space to the reaction space is in a specific range, so that non-reaction gas can lift the powder in the reaction space, and a thin film with uniform thickness can be formed on the surface of the powder.
Background
Nanoparticles (nanoparticles) are generally defined as particles smaller than 100 nm in at least one dimension, which are physically and chemically distinct from macroscopic materials. In general, the physical properties of macroscopic materials are independent of their size, but nanoparticles are not, and thus have potential applications in biomedical, optical, and electronic fields.
Quantum dots (Quantum dots) are nanoparticles of semiconductors, and the currently studied semiconductor materials are II-VI materials, such as ZnS, CdS, CdSe, etc., of which CdSe is the most drawing attention. The size of the quantum dot is usually between 2 and 50 nm, and after the quantum dot is irradiated by ultraviolet rays, electrons in the quantum dot absorb energy and transition from a valence band to a conduction band. The excited electrons release energy by luminescence when they return from the conduction band to the valence band.
The energy gap of the quantum dot is related to the size of the quantum dot, the larger the size of the quantum dot is, the smaller the energy gap is, the longer wavelength light can be emitted after irradiation, and the smaller the size of the quantum dot is, the larger the energy gap is, the shorter wavelength light can be emitted after irradiation. For example, 5 to 6 nm quantum dots emit orange or red light, while 2 to 3 nm quantum dots emit blue or green light, depending on the material composition of the quantum dots.
The light generated by a Light Emitting Diode (LED) using quantum dots can approach a continuous spectrum, and has high color rendering property, which is beneficial to improving the light emitting quality of the LED. In addition, the wavelength of the emitted light can be adjusted by changing the size of the quantum dots, so that the quantum dots become the development focus of a new generation of light-emitting devices and displays.
Although the quantum dots have the advantages and characteristics, the quantum dots are easy to agglomerate in the application or manufacturing process. In addition, the quantum dots have higher surface activity and are easy to react with air and water vapor, so that the service life of the quantum dots is shortened.
Specifically, when the quantum dots are made into the sealant of the light emitting diode, the agglomeration effect may be generated, which reduces the optical performance of the quantum dots. In addition, after the quantum dots are manufactured into the sealant of the light emitting diode, external oxygen or moisture may still penetrate through the sealant to contact the surface of the quantum dots, which may oxidize the quantum dots and affect the performance or the service life of the quantum dots and the light emitting diode. Surface defects and dangling bonds (dangling bonds) of the quantum dots can also cause non-radiative recombination (non-radiative recombination), which also affects the luminous efficiency of the quantum dots.
At present, the quantum well structure is formed by forming a thin film with a thickness of nanometer on the surface of the quantum dot through Atomic Layer Deposition (ALD), or forming a plurality of thin films on the surface of the quantum dot.
The atomic layer deposition can form a thin film with uniform thickness on the substrate, can effectively control the thickness of the thin film, and is theoretically suitable for three-dimensional quantum dots. When the quantum dots are placed on the carrier plate, contact points exist between adjacent quantum dots, so that precursor gas for atomic layer deposition cannot contact the contact points, and a thin film with uniform thickness cannot be formed on the surfaces of all the nano-particles.
Disclosure of Invention
In order to solve the above-mentioned problems of the prior art, the present invention provides an atomic layer deposition apparatus for powder, which can sufficiently stir the powder in an atomic layer deposition process, so that the powder is diffused to each region of a reaction space of a vacuum chamber, thereby facilitating to form a thin film with a uniform thickness on the surface of each powder.
An objective of the present invention is to provide an atomic layer deposition apparatus for powder, which mainly includes a driving unit, a shaft seal device and a vacuum chamber, wherein the driving unit is connected to the vacuum chamber through the shaft seal device and drives the vacuum chamber to rotate. The shaft seal device comprises an outer tube and an inner tube, wherein the inner tube is positioned in the accommodating space of the outer tube and extends to a reaction space of the vacuum cavity to form a protruding tube part in the reaction space. The driving unit is connected with the vacuum cavity through the outer pipe body and drives the vacuum cavity to rotate through the outer pipe body. When the driving unit drives the outer tube body and the vacuum cavity to rotate, the inner tube body can be kept still.
The reaction space has a first length and a first width, and the protruding tube portion has a second length and a second width, wherein the ratio of the first length to the second length to the first width to the second width is in a specific range, so as to facilitate the rotation of the vacuum cavity and the spraying of the non-reaction gas to the reaction space, to sufficiently and uniformly stir the powder in the reaction space, and to form a film with uniform thickness on the surface of all the powder in an atomic layer deposition manner.
It is an object of the present invention to provide an atomic layer deposition apparatus for powder, wherein the reaction space can be a column with any geometric shape, the first length is the maximum length of the reaction space, and the first width is the maximum width of the reaction space.
In order to achieve the above object, the present invention provides an atomic layer deposition apparatus for powder, comprising: a vacuum chamber including a reaction space for accommodating a plurality of powders; a shaft sealing device, including an outer tube and an inner tube, wherein the outer tube has a receiving space for receiving the inner tube, and the inner tube has a connecting space, wherein the inner tube extends from the receiving space of the outer tube to the reaction space of the vacuum cavity and forms a protruding tube; the driving unit is connected with the vacuum cavity through the shaft seal device and drives the vacuum cavity to rotate through the outer pipe body; at least one gas pumping pipeline which is positioned in the connecting space of the inner pipe body and is in fluid connection with the reaction space of the vacuum cavity body for pumping gas in the reaction space; at least one gas inlet pipeline, which is positioned in the connecting space of the inner pipe body and is in fluid connection with the reaction space of the vacuum cavity body, and is used for conveying a precursor or a non-reaction gas to the reaction space, wherein the non-reaction gas is used for blowing powder in the reaction space; the reaction space has a first length, the protruding tube has a second length, the direction of the first length of the reaction space and the direction of the second length of the protruding tube are parallel to the rotating axis of the vacuum cavity, and the ratio of the second length to the first length is larger than 0.2 and smaller than 0.8.
The invention provides an atomic layer deposition device of powder, comprising: a vacuum chamber including a reaction space for accommodating a plurality of powders; a shaft sealing device, including an outer tube and an inner tube, wherein the outer tube has a receiving space for receiving the inner tube, and the inner tube has a connecting space, wherein the inner tube extends from the receiving space of the outer tube to the reaction space of the vacuum cavity and forms a protruding tube; the driving unit is connected with the vacuum cavity through the shaft seal device and drives the vacuum cavity to rotate through the outer pipe body; at least one gas pumping pipeline which is positioned in the connecting space of the inner pipe body and is in fluid connection with the reaction space of the vacuum cavity body for pumping gas in the inner reaction space; at least one gas inlet pipeline, which is positioned in the connecting space of the inner pipe body and is in fluid connection with the reaction space of the vacuum cavity body, and is used for conveying a precursor or a non-reaction gas to the reaction space, wherein the non-reaction gas is used for blowing powder in the reaction space; the reaction space has a first width and a first length, the direction of the first length of the reaction space is parallel to the rotating axis of the vacuum cavity, the first width is vertical to the first length, and the ratio of the first width to the first length of the reaction space is more than 0.5 and less than 3.
The invention provides an atomic layer deposition device of powder, comprising: a vacuum chamber including a reaction space for accommodating a plurality of powders; a shaft sealing device, including an outer tube and an inner tube, wherein the outer tube has a receiving space for receiving the inner tube, and the inner tube has a connecting space, wherein the inner tube extends from the receiving space of the outer tube to the reaction space of the vacuum cavity and forms a protruding tube; the driving unit is connected with the vacuum cavity through the shaft seal device and drives the vacuum cavity to rotate through the outer pipe body; at least one gas pumping pipeline which is positioned in the connecting space of the inner pipe body and is in fluid connection with the reaction space of the vacuum cavity body for pumping gas in the reaction space; at least one gas inlet pipeline, which is positioned in the connecting space of the inner pipe body and is in fluid connection with the reaction space of the vacuum cavity body, and is used for conveying a precursor or a non-reaction gas to the reaction space, wherein the non-reaction gas is used for blowing powder in the reaction space; the reaction space has a first width, the protruding tube has a second width, the first width of the reaction space and the second width of the protruding tube are perpendicular to the axis of the vacuum chamber, and the ratio of the first width to the second width is greater than 1.5 and less than 6.
The atomic layer deposition device for the powder comprises an inner tube body, wherein the inner tube body is provided with a connecting space, and the connecting space is provided with a gas inlet pipeline.
The atomic layer deposition device of the powder, wherein the reaction space is a circular wavy column or a polygonal column, the first length is the maximum length of the reaction space, and the first width is the maximum width of the reaction space.
In the atomic layer deposition device for the powder, a groove is formed in the bottom of the vacuum cavity, and the groove extends from the bottom of the vacuum cavity to the reaction space and is used for accommodating the inner tube.
In the atomic layer deposition device for the powder, the vacuum cavity is fixed on the shaft sealing device through at least one fixing unit, and after the fixing unit is dismounted, the vacuum cavity can be separated from the shaft sealing device.
The invention has the beneficial effects that: the powder can be fully stirred in the atomic layer deposition process, so that the reaction space of the whole vacuum cavity is filled with the powder, and contact points among the powder are reduced, thereby being beneficial to forming a film with uniform thickness on the surface of each powder.
Drawings
FIG. 1 is a schematic perspective view of an atomic layer deposition apparatus for depositing powders according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view of an atomic layer deposition apparatus of the powder of the present invention.
FIG. 3 is a schematic cross-sectional view of an exemplary embodiment of a partial atomic layer deposition apparatus for depositing powders.
FIG. 4 is a schematic cross-sectional view of another embodiment of an atomic layer deposition apparatus for powders of the present invention.
FIG. 5 is an exploded view of an atomic layer deposition apparatus of another embodiment of the powder of the present invention.
Description of reference numerals: 10-atomic layer deposition of powder; 11-vacuum chamber; 111-a cover plate; 113-a cavity; 115-bottom; 117-grooves; 12-a reaction space; 121-powder; 13-a shaft seal device; 130-a protruding tube portion; 131-an outer body; 132-a containing space; 133-an inner tube; 134-a connection space; 135-a stationary unit; 139-a filtration unit; 14-a gear; 15-a drive unit; 171-a suction line; 173-an air intake line; 175-non-reactive gas delivery line; 177-a heater; 179-temperature sensing unit; 191-a carrier plate; 193-fixed mount; 195-a connecting shaft; a-a first width; b-a first length; c-a second length; d-second width.
Detailed Description
Referring to fig. 1 and fig. 2, a schematic perspective view and a schematic cross-sectional view of an atomic layer deposition apparatus of the powder according to an embodiment of the invention are shown. As shown in the figure, the atomic layer deposition apparatus 10 for powder mainly includes a vacuum chamber 11, a shaft seal device 13 and a driving unit 15, wherein the driving unit 15 is connected to the vacuum chamber 11 through the shaft seal device 13 and drives the vacuum chamber 11 to rotate.
The vacuum chamber 11 has a reaction space 12 for accommodating a plurality of powders 121, wherein the powders 121 may be Quantum dots (Quantum dots), such as ZnS, CdS, CdSe, and other II-VI semiconductor materials, and the thin film formed on the Quantum dots may be aluminum oxide (Al2O 3). The vacuum chamber 11 may include a cover plate 111 and a chamber 113, wherein the cover plate 111 covers the chamber 113 and forms a reaction space 12 therebetween.
In an embodiment of the present invention, the shaft sealing device 13 includes an outer tube 131 and an inner tube 133, wherein the outer tube 131 has a receiving space 132, and the inner tube 133 has a connecting space 134, for example, the outer tube 131 and the inner tube 133 may be hollow cylinders. The accommodating space 132 of the outer tube 131 is used for accommodating the inner tube 133, wherein the outer tube 131 and the inner tube 133 are coaxially disposed. The shaft seal device 13 can be a common shaft seal or a magnetic fluid shaft seal, and is mainly used to isolate the reaction space 12 of the vacuum chamber 11 from the external space to maintain the vacuum of the reaction space 12.
The driving unit 15 is connected to the vacuum chamber 11 through the outer tube 131, and drives the vacuum chamber 11 to rotate through the outer tube 131. In addition, the driving unit 15 is not connected to the inner tube 133, so that the inner tube 133 does not rotate when the driving unit 15 drives the outer tube 131 and the vacuum chamber 11 to rotate. In an embodiment of the invention, the driving unit 15 can be a motor, and is connected to the outer tube 131 through at least one gear 14, and drives the outer tube 131 and the vacuum chamber 11 to rotate relative to the inner tube 133 through the gear 14.
The driving unit 15 can drive the outer tube 131 and the vacuum chamber 11 to rotate continuously in the same direction, for example, clockwise or counterclockwise. In various embodiments, the driving unit 15 can drive the outer tube 131 and the vacuum chamber 11 to rotate clockwise by a specific angle and then rotate counterclockwise by a specific angle, for example, the specific angle can be 360 degrees. The vacuum chamber 11 stirs the powder 121 in the reaction space 12 while rotating, so as to facilitate the powder 121 to contact with the precursor gas or the non-reactive gas
At least one pumping line 171, at least one gas inlet line 173, at least one non-reactive gas delivery line 175, a heater 177 and/or a temperature sensing unit 179 may be disposed in the connection space 134 of the inner tube 133, as shown in fig. 2 and 3.
The gas pumping line 171 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used for pumping out the gas in the reaction space 12, so that the reaction space 12 is in a vacuum state for performing the subsequent atomic layer deposition process. Specifically, the gas exhaust line 171 may be connected to a pump, and the gas in the reaction space 12 is exhausted by the pump.
The gas inlet line 173 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used for delivering a precursor or a non-reactive gas to the reaction space 12, wherein the non-reactive gas may be an inert gas such as nitrogen or argon. For example, the gas inlet line 173 may connect a precursor storage tank and a non-reactive gas storage tank through a valve set and deliver the precursor gas into the reaction space 12 through the valve set so that the precursor gas deposits on the surface of the powder 121. In practice, the gas inlet line 173 may deliver a carrier gas (carrier gas) and precursor gas into the reaction space 12. Non-reactive gases are then delivered into reaction space 12 through a set of valves and pumped through pumping line 171 to remove precursor gases from reaction space 12. In one embodiment of the present invention, the gas inlet line 173 may be connected to a plurality of branch lines, and may sequentially deliver different precursor gases into the reaction space 12 through each branch line.
The gas inlet line 173 may increase the flow rate of the non-reactive gas supplied to the reaction space 12 and blow the powder 121 in the reaction space 12 by the non-reactive gas, so that the powder 121 is diffused to various regions of the reaction space 12 by the non-reactive gas.
In one embodiment of the present invention, the gas inlet line 173 may comprise at least one non-reactive gas delivery line 175, wherein the non-reactive gas delivery line 175 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is configured to deliver a non-reactive gas to the reaction space 12, for example, the non-reactive gas delivery line 175 may be connected to a nitrogen storage tank through a valve set and deliver nitrogen to the reaction space 12 through the valve set. The non-reactive gas is used to blow the powder 121 in the reaction space 12, and the driving unit 15 is used to drive the vacuum chamber 11 to rotate, so as to effectively and uniformly stir the powder 121 in the reaction space 12 and to deposit a thin film with uniform thickness on the surface of each powder 121.
The gas inlet line 173 and the non-reactive gas delivery line 175 of the ald apparatus 10 for forming a thin film on a powder are used to deliver a non-reactive gas to the reaction space 12, wherein the gas inlet line 173 delivers a smaller flow of the non-reactive gas to primarily remove the precursor gas in the reaction space 12, and the gas delivery line 175 delivers a larger flow of the non-reactive gas to primarily blow the powder 121 in the reaction space 12.
Specifically, the gas inlet line 173 and the non-reactive gas transfer line 175 may transfer the non-reactive gas to the reaction space 12 at different time points, so that the non-reactive gas transfer line 175 may not be provided in practical applications, and the flow rate of the non-reactive gas transferred by the gas inlet line 173 at different time points may be adjusted. When the precursor gas in the reaction space 12 is to be removed, the flow rate of the non-reactive gas delivered to the reaction space 12 by the gas inlet line 173 is reduced, and when the powder 121 in the reaction space 12 is to be blown, the flow rate of the non-reactive gas delivered to the reaction space 12 by the gas inlet line 173 is increased.
The heater 177 heats the connecting space 134 and the inner tube 133, and heats the pumping line 171, the gas inlet line 173 and/or the non-reactive gas transporting line 175 in the inner tube 133 through the heater 177 to increase the temperature of the gas in the pumping line 171, the gas inlet line 173 and/or the non-reactive gas transporting line 175. For example, the temperature of the non-reactive gas and/or precursor gas delivered to the reaction space 12 by the gas inlet line 173 may be increased, and the temperature of the non-reactive gas delivered to the reaction space 12 by the non-reactive gas delivery line 175 may be increased. So that the temperature of the reaction space 12 is not greatly reduced or changed when the non-reactive gas and/or the precursor gas enters the reaction space 12. In addition, the temperature of the heater 177 or the connection space 134 can be measured by the temperature sensing unit 179 to know the operating state of the heater 177. Of course, another heating device is usually disposed inside, outside or around the vacuum chamber 11, wherein the heating device is adjacent to or in contact with the vacuum chamber 11 and is used to heat the vacuum chamber 11 and the reaction space 12.
In the embodiment of the present invention, the inner tube 133 of the shaft sealing device 13 extends from the accommodating space 132 of the outer tube 131 to the reaction space 12 of the vacuum chamber 11, wherein the inner tube 133 of the reaction space 12 is defined as a protruding tube 130. In addition, the pumping line 171, the gas inlet line 173, the non-reactive gas delivery line 175, the heater 177 and/or the temperature sensing unit 179 located in the connection space 134 of the inner tube 133 are also located at the protruding tube portion 130. The distance between the gas inlet line 173 and/or the non-reactive gas delivery line 175 and the cover plate 111 may be shortened or adjusted by the arrangement of the protruding tube portion 130, so that the non-reactive gas delivered to the reaction space 12 by the gas inlet line 173 and/or the non-reactive gas delivery line 175 is transferred to the cover plate 111 and diffused to various regions of the reaction space 12 through the cover plate 111.
In one embodiment of the present invention, a filter unit 139 is disposed at one end of the protruding tube portion 130, wherein the gas exhaust line 171 is fluidly connected to the reaction space 12 via the filter unit 139, and exhausts the gas in the reaction space 12 via the filter unit 139. The filtering unit 139 is mainly used to filter the powder 121 in the reaction space 12 to prevent the powder 121 from entering the air exhaust line 171 during the air exhaust process and causing the loss of the powder 121.
As shown in fig. 2, the reaction space 12 in the vacuum chamber 11 is approximately cylindrical and has a first width a and a first length b. For example, when the reaction space 12 is a cylinder, the first width a is the diameter of the cylinder, and the first length b is the height of the cylinder in the axial direction. In addition, the protruding tube 130 is also substantially cylindrical in appearance and has a second width d and a second length c, wherein the second width d is the diameter of the cylinder, and the second length c is the protruding height of the cylinder in the axial direction.
The present invention transfers the non-reactive gas to the reaction space 12 by the rotation of the vacuum chamber 11 in cooperation with the non-reactive gas transfer line 175, so as to sufficiently and uniformly stir the powder 121 in the reaction space 12.
The inventors believe that the uniformity of the agitation of the powder 121 in the reaction space 12 is related to the ratio of the reaction space 12 of the vacuum chamber 11 to the protruding tube portion 130 of the shaft seal device 13. Therefore, after many experiments and experiments, the inventors found out the optimum ratio range of the length and the width of the reaction space 12 and/or the protruding tube 130, so that the powder 121 in the vacuum chamber 11 can be uniformly diffused in the reaction space 12, and a thin film with a uniform thickness is formed on the surface of the powder 121.
In an embodiment of the present invention, the first length b of the reaction space 12 and the second length c of the protruding tube portion 130 are parallel to the axis of the rotation of the vacuum chamber 11, wherein the ratio of the second length c of the protruding tube portion 130 to the first length b of the reaction space 12 is greater than 0.2 and less than 0.8.
In an embodiment of the present invention, the first length b of the reaction space 12 is parallel to the axis of the rotation of the vacuum chamber 11, and the first width a of the reaction space 12 is perpendicular to the first length b, wherein the ratio of the first width a to the first length b of the reaction space 12 is greater than 0.5 and less than 3.
In an embodiment of the present invention, the directions of the first width a of the reaction space 12 and the second width d of the protruding tube portion 130 are perpendicular to the axis of rotation of the vacuum chamber 11, wherein the ratio of the first width a of the reaction space 12 to the second width d of the protruding tube portion 130 is greater than 1.5 and less than 6.
In one embodiment of the present invention, the first width a of the reaction space 12 may be 160mm to 230 mm; the first length b of the reaction space 12 may be 80mm to 90 mm; the second width d of the protruding tube portion 130 may be 40mm to 60 mm; and the second length c of the protruding tube portion 130 may be 40mm to 60 mm. Of course, the length and width of the reaction space 12 and the protruding tube 130 are only an embodiment of the present invention, and are not intended to limit the scope of the present invention.
In practical applications, the first width a, the first length b, the second length c and the second width d of the reaction space 12 and the protruding tube portion 130 can be changed according to the requirements, so long as the ratio of the width and/or the length of the reaction space 12 and/or the protruding tube portion 130 is within the range of the above-mentioned embodiments, the powder 121 in the reaction space 12 can be sufficiently and uniformly agitated by the rotation of the vacuum chamber 11 and the non-reaction gas sprayed to the reaction space 12, and a thin film with a uniform thickness can be formed on the surface of all the powder 121 by atomic layer deposition.
In the above embodiment of the present invention, the reaction space 12 and the protruding tube portion 130 are mainly used as cylinders, but the shapes of the reaction space 12 and the protruding tube portion 130 are not limited to cylinders in practical applications, for example, the reaction space 12 is a circular wavy cylinder or a polygonal cylinder. As shown in fig. 4, the inner surface of the cover 111 and/or the cavity 113 may be provided with at least one recess or protrusion of any geometric shape to facilitate the diffusion of the powder 121 in the reaction space 12. In this case, the first width a of the reaction space 12 is defined as the maximum width within the reaction space 12, and the first length b is defined as the maximum length within the reaction space 12.
In an embodiment of the present invention, the atomic layer deposition apparatus 10 for powder may also include a carrier 191 and at least one fixing frame 193, wherein the carrier 191 may be a plate for carrying the driving unit 15, the vacuum chamber 11 and the shaft sealing device 13. For example, the carrier plate 191 is connected to the driving unit 15, and the sealing device 13 and the vacuum chamber 11 are connected by the driving unit 15. In addition, the shaft seal device 13 and/or the vacuum chamber 11 can also be connected to the bearing plate 191 through at least one support frame to improve the stability of the connection.
The bearing plate 191 may be connected to the fixing frame 193 through at least one connecting shaft 195, wherein the number of the fixing frames 193 may be two, and the two fixing frames are respectively disposed at two sides of the bearing plate 191. The bearing plate 191 can rotate relative to the fixing frame 193 by taking the shaft 195 as an axis to change the elevation angles of the driving unit 15, the shaft sealing device 13 and the vacuum chamber 11, so as to form a film with uniform thickness on the surface of each powder 121.
In an embodiment of the present invention, as shown in fig. 5, the shaft seal device 13 and the vacuum chamber 11 can be two independent and detachable components, wherein the bottom 115 of the vacuum chamber 11 and the shaft seal device 13 can be provided with corresponding connecting holes, and the fixing unit 135 can pass through the connecting holes of the two to fix the vacuum chamber 11 on the shaft seal device 13. After the fixing unit 135 is removed, the vacuum chamber 11 can be separated from the shaft sealing device 13. By such a detachable mechanism, it is convenient for the user to detach the vacuum chamber 11 from the shaft sealing device 13, take out the powder 121 completing the atomic layer deposition in the vacuum chamber 11, and clean the vacuum chamber 11. In practical applications, the vacuum chamber 11 for completing the atomic layer deposition process can be removed from the shaft seal device 13, and another vacuum chamber 11 to be subjected to the atomic layer deposition process can be fixed on the shaft seal device 13, so as to improve the efficiency of the process.
Furthermore, the bottom 115 of the vacuum chamber 11 can be provided with a groove 117, wherein the groove 117 extends from the bottom 115 of the vacuum chamber 11 to the reaction space 12, and the inner tube 133 of the shaft sealing device 13 can be inserted into the groove 117 and form the protruding tube 130 in the reaction space 12 of the vacuum chamber 11.
The invention has the advantages that:
the powder can be fully stirred in the atomic layer deposition process, so that the reaction space of the whole vacuum cavity is filled with the powder, and contact points among the powder are reduced, thereby being beneficial to forming a film with uniform thickness on the surface of each powder.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, i.e., all equivalent variations and modifications in the shape, structure, characteristics and spirit of the present invention described in the claims should be included in the scope of the present invention.
Claims (10)
1. An apparatus for atomic layer deposition of a powder, comprising:
a vacuum chamber including a reaction space for accommodating a plurality of powders;
a shaft sealing device, including an outer tube and an inner tube, wherein the outer tube has a receiving space for receiving the inner tube, and the inner tube extends from the receiving space of the outer tube to the reaction space of the vacuum chamber to form a protruding tube;
a driving unit, which is connected with the vacuum cavity through the shaft seal device and drives the vacuum cavity to rotate through the outer tube body;
at least one gas extraction line positioned in the inner tube body and fluidly connected to the reaction space of the vacuum chamber for extracting a gas in the reaction space; and
at least one gas inlet pipeline, located in the inner tube body and fluidly connected to the reaction space of the vacuum chamber, for delivering a precursor or a non-reactive gas to the reaction space, wherein the non-reactive gas is used for blowing the powder in the reaction space;
the reaction space has a first length, the protruding tube has a second length, the direction of the first length of the reaction space and the direction of the second length of the protruding tube are parallel to the axis of the vacuum cavity, and the ratio of the second length to the first length is greater than 0.2 and less than 0.8.
2. The atomic layer deposition apparatus according to claim 1, wherein the reaction space is a circular wavy cylinder or a polygonal cylinder, and the first length is a maximum length in the reaction space.
3. The atomic layer deposition apparatus according to claim 1, wherein a bottom of the vacuum chamber has a recess extending from the bottom of the vacuum chamber to the reaction space for accommodating the inner tube, and the vacuum chamber is fixed to the shaft sealing device by at least one fixing unit, and the vacuum chamber is separated from the shaft sealing device after the fixing unit is removed.
4. The atomic layer deposition apparatus according to claim 1, wherein the gas inlet line comprises at least one non-reactive gas delivery line disposed in the inner tube and fluidly connected to the reaction space of the vacuum chamber for delivering the non-reactive gas into the reaction space of the vacuum chamber to blow the powder in the reaction space.
5. An apparatus for atomic layer deposition of a powder, comprising:
a vacuum chamber including a reaction space for accommodating a plurality of powders;
a shaft sealing device, including an outer tube and an inner tube, wherein the outer tube has a receiving space for receiving the inner tube, and the inner tube extends from the receiving space of the outer tube to the reaction space of the vacuum chamber to form a protruding tube;
a driving unit, which is connected with the vacuum cavity through the shaft seal device and drives the vacuum cavity to rotate through the outer tube body;
at least one gas extraction line positioned in the inner tube body and fluidly connected to the reaction space of the vacuum chamber for extracting a gas in the reaction space; and
at least one gas inlet pipeline, located in the inner tube body and fluidly connected to the reaction space of the vacuum chamber, for delivering a precursor or a non-reactive gas to the reaction space, wherein the non-reactive gas is used for blowing the powder in the reaction space;
the reaction space has a first width and a first length, the direction of the first length of the reaction space is parallel to the rotating axis of the vacuum cavity, the first width is perpendicular to the first length, and the ratio of the first width to the first length of the reaction space is more than 0.5 and less than 3.
6. The atomic layer deposition apparatus according to claim 5, wherein the reaction space is a circular wavy cylinder or a polygonal cylinder, the first length is a maximum length of the reaction space, and the first width is a maximum width of the reaction space.
7. The atomic layer deposition apparatus according to claim 5, wherein an outer surface of the vacuum chamber includes a groove extending from the outer surface of the vacuum chamber to the reaction space for receiving the inner tube, and the vacuum chamber is locked to the shaft sealing device by at least one locking unit, and the vacuum chamber is separated from the shaft sealing device after the locking unit is removed.
8. An apparatus for atomic layer deposition of a powder, comprising:
a vacuum chamber including a reaction space for accommodating a plurality of powders;
a shaft sealing device, including an outer tube and an inner tube, wherein the outer tube has a receiving space for receiving the inner tube, and the inner tube extends from the receiving space of the outer tube to the reaction space of the vacuum chamber to form a protruding tube;
a driving unit, which is connected with the vacuum cavity through the shaft seal device and drives the vacuum cavity to rotate through the outer tube body;
at least one gas extraction line positioned in the inner tube body and fluidly connected to the reaction space of the vacuum chamber for extracting a gas in the reaction space; and
at least one gas inlet pipeline, located in the inner tube body and fluidly connected to the reaction space of the vacuum chamber, for delivering a precursor or a non-reactive gas to the reaction space, wherein the non-reactive gas is used for blowing the powder in the reaction space;
the reaction space has a first width, the protruding tube has a second width, the first width of the reaction space and the second width of the protruding tube are perpendicular to the axis of the vacuum chamber, and the ratio of the first width to the second width is greater than 1.5 and less than 6.
9. The atomic layer deposition apparatus according to claim 8, wherein the reaction space is a circular wavy cylinder or a polygonal cylinder, and the first width is a maximum width of the reaction space.
10. The atomic layer deposition apparatus according to claim 8, wherein the vacuum chamber includes a groove extending from the outer surface of the vacuum chamber to the reaction space for receiving the inner tube, and the vacuum chamber is locked to the shaft sealing device by at least one locking unit, and the vacuum chamber is separated from the shaft sealing device after the locking unit is removed.
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| CN115679290A (en) * | 2021-07-26 | 2023-02-03 | 鑫天虹(厦门)科技有限公司 | Atomic layer deposition apparatus with down-blow line |
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| US20170137940A1 (en) * | 2015-11-12 | 2017-05-18 | Anthony F. Zeberoff | Apparatus and method for coating bulk quantities of solid particles |
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