CN112652545A - Packaging method and packaging device for surface acoustic wave filter - Google Patents
Packaging method and packaging device for surface acoustic wave filter Download PDFInfo
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 99
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 55
- 229920000642 polymer Polymers 0.000 claims abstract description 56
- 238000003825 pressing Methods 0.000 claims abstract description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 27
- 239000010931 gold Substances 0.000 claims description 20
- 229910052737 gold Inorganic materials 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000003698 laser cutting Methods 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 6
- 238000002788 crimping Methods 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 230000010354 integration Effects 0.000 abstract description 6
- 238000010923 batch production Methods 0.000 abstract description 2
- 238000012858 packaging process Methods 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/4952—Additional leads the additional leads being a bump or a wire
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
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Abstract
The invention relates to a packaging method and a packaging device for surface acoustic wave filters, which comprises the steps of firstly preparing a polymer bonding layer on a chip wafer with at least one surface acoustic wave filter, pressing the polymer bonding layer to package the wafer, then arranging a plurality of top electrodes on the other surface of the packaged wafer, wherein each top electrode is respectively connected with the exposed part of the electrode on each surface acoustic wave filter, realizing the electrical interconnection between each top electrode and each surface acoustic wave filter, realizing the high-density integration of the plurality of surface acoustic wave filters by using a combined packaging device, and finally segmenting the combined packaging device to obtain at least one packaging device with the surface acoustic wave filter, wherein the packaging process is simple, the surface of the surface acoustic wave filter cannot be damaged, the batch production of the packaging device is realized, the efficiency is high, the cost is low, and the volume of the packaged device is small.
Description
Technical Field
The invention relates to the technical field of surface acoustic wave filters, in particular to a packaging method and a packaging device for a surface acoustic wave filter.
Background
In radio frequency electronic devices such as satellite communication, satellite navigation, guidance heads, phased array radars, electronic countermeasure, mobile communication, and the like, equipment systems are being developed toward miniaturization and integration in order to expand weapon power, increase detection accuracy, and reduce emission cost-to-efficiency ratio. In a T/R component of an antenna array of a digital array radar and a phased array radar, a Surface Acoustic Wave filter is used for suppressing clutter and interference, usually thousands of Surface Acoustic Wave filters are needed on one antenna array, and meanwhile, in order to guarantee the requirements of high directivity and small sidelobe of a radiation beam of the antenna array, the distance of the center of each T/R component is smaller than half wavelength, so that the smaller the size of the Surface Acoustic Wave filter is, the better the Surface Acoustic Wave filter is, usually less than 3mm multiplied by 3mm, and therefore the Surface Acoustic Wave filter (SAW) is required to be developed towards miniaturization and integration.
However, the Surface acoustic wave filter of the conventional DIP metal Package (DIP is an abbreviation of Dual In-line Package), that is, the Dual In-line Package and the SMD ceramic Surface Mounted (SMD is an abbreviation of Surface Mounted Devices) cannot meet the requirement for further miniaturization of weapons equipment, and the Surface of the Surface acoustic wave filter Mounted by the DIP metal Package and the SMD ceramic Surface Mounted is easily damaged, and the aluminum electrode and the piezoelectric material cannot be mixed and integrated, so that it is difficult to perform high density integration, and the process of the conventional Dual In-line Package and the SMD ceramic Surface Mounted is complicated, resulting In problems of long production period, high production cost, and the like.
Disclosure of Invention
The invention provides a packaging method and a packaging device for a surface acoustic wave filter, aiming at the defects of the prior art.
The technical scheme of the packaging method for the surface acoustic wave filter is as follows:
preparing a polymer bonding layer on a chip wafer for manufacturing at least one surface acoustic wave filter, wherein the polymer bonding layer comprises a plurality of polymer bonding patterns, each polymer bonding pattern is laid on an electrode of the corresponding surface acoustic wave filter, and part of the electrode of each surface acoustic wave filter is exposed outside;
crimping a packaging wafer on the polymer bonding layer;
manufacturing a plurality of top electrodes on the other surface of the packaging wafer, wherein each top electrode is respectively connected with the exposed part of the electrode on each surface acoustic wave filter, so that a combined packaging device is obtained;
and dividing the combined packaging device to obtain at least one packaging device with the surface acoustic wave filter.
The packaging method for the surface acoustic wave filter has the following beneficial effects:
the method comprises the steps of firstly, preparing a polymer bonding layer on a chip wafer with at least one surface acoustic wave filter, pressing and packaging the wafer on the polymer bonding layer, then arranging a plurality of top electrodes on the other surface of the packaged wafer, wherein each top electrode is respectively connected with an exposed part of an electrode on each surface acoustic wave filter, so that the electrical interconnection between each top electrode and each surface acoustic wave filter is realized, the high-density integration of the surface acoustic wave filters is realized by the combined packaging device, and finally, the combined packaging device is divided, so that at least one packaging device with the surface acoustic wave filters is obtained.
On the basis of the above scheme, the method for packaging the surface acoustic wave filter of the present invention can be further improved as follows.
Further, the surface of the package wafer is provided with at least one groove, and the pressing of the package wafer on the polymer bonding layer includes:
and pressing the packaging wafer on the polymer bonding layer, wherein the grooves and the polymer bonding patterns are arranged in a staggered mode, and the opening direction of the grooves faces to the chip wafer.
Before the top electrode is manufactured on the other surface of the packaging wafer, the method further comprises the following steps:
thinning the packaging wafer until the bottom of the groove is exposed to obtain a thinned packaging wafer;
the manufacturing of the top electrode on the other surface of the packaging wafer comprises:
and manufacturing a top electrode on the other surface of the thinned packaging wafer.
The beneficial effect of adopting the further scheme is that: by thinning the packaging wafer, the size of a combined packaging device and a packaging device is further reduced, and the packaging device is more convenient to use on equipment such as an antenna array of a digital array radar and a phased array radar.
Further, before the top electrode is fabricated on the other surface of the partial packaging wafer, the method further includes: and polishing the surface of the thinned packaging wafer.
The beneficial effect of adopting the further scheme is that: the surface of the thinned packaging wafer is polished, so that the connection strength between the surface of the polished packaging wafer and the top electrode is improved.
Further, the dividing the combined packaged device includes:
and cutting the combined packaging device by adopting a laser cutting or grinding wheel scribing mode.
The beneficial effect of adopting the further scheme is that: the laser cutting mode has high precision, can effectively avoid pollution caused by redundant materials brought by cutting, and improves the yield of the produced packaged devices.
Further, still include: and planting gold balls on the top electrode by adopting a gold wire ball welding process.
The beneficial effect of adopting the further scheme is that: by implanting gold balls on the top electrode, connection with the packaging device is realized through the gold balls more conveniently.
Further, the preparing a polymer bonding layer on a chip wafer with at least one surface acoustic wave filter includes:
and preparing a polymer bonding layer on the chip wafer provided with at least one surface acoustic wave filter by an alignment process.
Furthermore, the packaging wafer and the chip wafer are made of the same piezoelectric material.
The beneficial effect of adopting the further scheme is that: the thermal expansion coefficients of the same materials are consistent, so that the wafer bonding process is facilitated, and the reliability is improved.
The technical scheme of the packaging device is as follows:
a packaged device manufactured by the method for packaging the surface acoustic wave filter is provided.
Drawings
Fig. 1 is a schematic flowchart of a method for packaging a surface acoustic wave filter according to an embodiment of the present invention;
fig. 2 is a second schematic flowchart of a method for packaging a saw filter according to an embodiment of the present invention;
fig. 3 is a schematic structural view of a surface acoustic wave filter;
FIG. 4 is a schematic diagram of a polymer bonding pattern laid on electrodes of a surface acoustic wave filter;
FIG. 5 is a schematic diagram of a packaged wafer with a recess;
FIG. 6 is a cross-sectional view of a packaged wafer with grooves;
FIG. 7 is a schematic view of a structure in which grooves and polymer bonding patterns are staggered with each other;
FIG. 8 is a schematic structural diagram of a thinned packaged wafer;
FIG. 9 is a schematic diagram of the structure after fabrication of the top electrode;
FIG. 10 is a schematic cross-sectional view after fabrication of a top electrode;
FIG. 11 is a schematic structural view of a top electrode with gold balls implanted thereon;
FIG. 12 is a schematic cross-sectional view of a top electrode with gold balls implanted thereon;
FIG. 13 is a schematic diagram of a packaged device;
in the drawings, the components represented by the respective reference numerals are listed below:
100. a surface acoustic wave filter; 101. a chip wafer; 102. a polymer bonding pattern; 103. an electrode; 104. interdigital fingers; 105. a groove; 106. packaging the wafer; 107. a top electrode; 108. gold balls; 109. a polymer bonding layer; 110. and (6) interdigital pattern layers.
Detailed Description
As shown in fig. 1, a method for packaging a surface acoustic wave filter 100 according to an embodiment of the present invention includes the following steps:
s1, preparing a polymer bonding layer 109 on a chip wafer 101 with at least one surface acoustic wave filter 100, wherein the polymer bonding layer 109 comprises a plurality of polymer bonding patterns 102, each polymer bonding pattern 102 is laid on an electrode 103 of the corresponding surface acoustic wave filter 100, and part of the electrode of each surface acoustic wave filter 100 is exposed outside;
s2, pressing the package wafer 106 onto the polymer bonding layer 109;
s3, fabricating a plurality of top electrodes 107 on the other surface of the package wafer 106, and connecting each top electrode 107 with the exposed portion of the upper electrode 103 of each saw filter 100, so as to obtain a combined package device;
and S4, dividing the combined packaging device to obtain at least one packaging device with the surface acoustic wave filter 100.
First, a polymer bonding layer 109 is prepared on a chip wafer 101 provided with at least one surface acoustic wave filter 100, the package wafer 106 is crimped onto the polymer bonding layer 109, and then, a plurality of top electrodes 107 are provided on the other surface of the package wafer 106, and each top electrode 107 is connected to the exposed portion of the upper electrode 103 of each saw filter 100, respectively, to realize electrical interconnection between the top electrode 107 and each saw filter 100, and the combined packaging device realizes high-density integration of the plurality of surface acoustic wave filters 100, and finally, the combined packaging device is segmented to obtain at least one packaging device with the surface acoustic wave filter, the packaging process is simple, the surface of the surface acoustic wave filter 100 cannot be damaged, the batch production of the packaging device is realized, the efficiency is high, the cost is low, and the size of the packaging device is small. Here, the partial electrode exposed to the outside can be understood as a partial electrode 103 exposed to the outside. A process of manufacturing the saw filter 100 on the chip wafer 101 is known by those skilled in the art and will not be described herein, the saw filter 100 includes an electrode 103 and an interdigital 104, the electrode 103 and the interdigital 104 are both disposed on a surface of the chip wafer 101, and the electrode 103 of the saw filter 100 includes an input electrode for inputting a signal, an output electrode for outputting a signal, and the like.
The polymer bonding layer 109 is prepared on the chip wafer 101 provided with at least one saw filter 100 by an overlay process, and the material of the polymer bonding layer 109 is an insulating polymer with photosensitive characteristics, such as: a wafer bonding adhesive, wherein the polymer bonding layer 109 includes a polymer bonding pattern 102 corresponding to the surface acoustic wave filter 100 on the chip wafer 101, that is, each surface acoustic wave filter 100 corresponds to one polymer bonding pattern 102, and each polymer bonding pattern 102 is partially attached to the electrode 103 of the corresponding surface acoustic wave filter 100, so that a part of the electrode 103 of each surface acoustic wave filter 100 is exposed to the outside; the shape of the polymer bonding pattern 102 can be rectangular, circular, oval, etc., and can be adjusted according to the actual situation.
Wherein the package wafer 106 is crimped onto the polymer bonding layer 109 by a wafer bonding process.
Wherein the plurality of top electrodes 107 fabricated on the other surface of the package wafer 106 include top input electrodes for inputting signals and top output electrodes for outputting signals, etc., then the electrical interconnection between the top electrodes 107 and each saw filter 100 is embodied as:
when a signal is input to the top input electrode of the top electrode 107, the signal passes through the input electrode of the saw filter 100, the output electrode of the saw filter 100, and the top output electrode of the top electrode 107 in sequence, and the saw filter 100 filters the signal in the signal transmission process.
And cutting the combined packaging device by adopting a laser cutting mode. The laser cutting mode has high precision, can effectively avoid pollution caused by redundant materials brought by cutting, and improves the yield of the produced packaged devices.
Preferably, in the above technical solution, at least one groove 105 is formed on a surface of the package wafer 106, and the pressing the package wafer 106 on the polymer bonding layer 109 includes:
and pressing the packaging wafer 106 on the polymer bonding layer 109, wherein the grooves 105 and the polymer bonding patterns 102 are arranged in a staggered manner, and the opening direction of the grooves 105 faces the chip wafer 101.
Preferably, in the above technical solution, before the fabricating the top electrode 107 on the other surface of the package wafer 106, the method further includes:
thinning the packaging wafer 106 until the bottom of the groove 105 is exposed to obtain a thinned packaging wafer 106;
the fabricating of the top electrode 107 on the other surface of the package wafer 106 includes:
a top electrode 107 is fabricated on the other surface of the thinned package wafer 106.
The packaging wafer 106 can be thinned through processes such as thinning and grinding, the size of a combined packaging device and a packaging device is further reduced, and the packaging device is more convenient to use on devices such as an antenna array of a digital array radar and a phased array radar.
Preferably, in the above technical solution, before the fabricating the top electrode 107 on the other surface of the partially packaged wafer 106, the method further includes: and polishing the surface of the thinned packaging wafer 106.
By polishing the surface of the thinned package wafer 106, the connection strength between the surface of the polished package wafer 106 and the top electrode 107 is improved.
Preferably, in the above technical solution, the method further comprises: gold balls 108 are implanted on the top electrode 107 using a gold ball bonding process.
The gold ball 108 is implanted on the top electrode 107, so that the gold ball 108 can be more conveniently used for realizing the connection with the packaged device, and parameters such as the diameter range of the gold wire and the diameter and the thickness of the gold ball 108 adopted in the gold wire ball bonding process can be set according to actual conditions, which is not described herein again.
A method for packaging the saw filter 100 according to the present application is described in more detail below by using another embodiment, as shown in fig. 2, specifically:
s20, preparing the surface acoustic wave filter 100, specifically:
preparing a metal film of the interdigital layer 110 on the chip wafer 101 through a film coating process and the like, and then preparing the metal film into patterns such as an electrode 103, an interdigital 104 and the like of the surface acoustic wave filter 100 through processes such as corrosion and the like, as shown in fig. 3 (the chip wafer 101 is not shown), it can be understood that the size parameters of the electrode 103 and the interdigital 104 of the surface acoustic wave filter 100 can be set according to actual needs, which are not described herein in detail, and the material of the chip wafer 101 can be a piezoelectric material such as lithium tantalate, lithium niobate, quartz and the like;
the electrode 103 and the interdigital 104 of the saw filter 100 may also be directly prepared on the chip wafer 101 by a metal lift-off technology (metal lift-off technology), since the specific process of preparing the saw filter 100 on the chip wafer 101 is known by those skilled in the art and is not described herein, the electrode 103 and the interdigital 104 of the saw filter 100 are both disposed on the surface of the chip wafer 101, and the electrode 103 of the saw filter 100 includes the input electrode 103 for inputting signals, the output electrode 103 for outputting signals, and the like.
S21, preparing the polymer bonding layer 109, specifically:
the method comprises the steps of preparing a polymer bonding layer 109 on a chip wafer 101 provided with at least one surface acoustic wave filter 100 through an overlay process, wherein the polymer bonding layer 109 comprises polymer bonding patterns 102 corresponding to the surface acoustic wave filters 100 on the chip wafer 101, each polymer bonding pattern 102 is laid on an electrode 103 of the corresponding surface acoustic wave filter 100, a part of the electrode 103 of each surface acoustic wave filter 100 is exposed outside, and the shape of each polymer bonding pattern 102 can be rectangular, circular, oval and the like and can be adjusted according to actual conditions, as shown in fig. 4.
S22, pressing the packaging wafer 106 with the at least one groove 105 on the polymer bonding layer 109, specifically:
pressing the packaging wafer 106 on the polymer bonding layer 109, wherein the grooves 105 and the polymer bonding patterns 102 are arranged in a staggered manner as shown in fig. 7, and the opening direction of the grooves 105 faces the chip wafer 101;
wherein the size of the grooves 105 is set according to practical situations, and the distance between two adjacent grooves 105 is also set according to practical situations, for example, as shown in fig. 5 and 6, a plurality of grooves 105 may be respectively set in the transverse direction and the longitudinal direction of the package wafer 106.
The package wafer 106 and the chip wafer 101 are made of the same piezoelectric material, for example, the package wafer 106 and the chip wafer 101 are made of a piezoelectric material such as lithium tantalate, lithium niobate, or quartz. S23, thinning the packaged wafer 106, specifically:
right the packaging wafer 106 is thinned to the bottom of the exposed groove 105, so that the thinned packaging wafer 106 is obtained, as shown in fig. 8, the packaging wafer 106 can be thinned through processes such as thinning and grinding, the size of a combined packaging device and a packaging device is further reduced, and the packaging wafer is more convenient to use on devices such as an antenna array of a digital array radar and a phased array radar.
S24, polishing the thinned packaged wafer 106, and polishing the surface of the thinned packaged wafer 106 to improve the connection strength between the surface of the polished packaged wafer 106 and the top electrode 107.
S25, fabricating a top electrode 107, as shown in fig. 9 and 10, fabricating the top electrode 107 on the polished surface of the thinned packaging wafer 106, where the top electrode 107 includes a top input electrode for inputting signals and a top output electrode for outputting signals, and so on, then the electrical interconnection between the top electrode 107 and each saw filter 100 is embodied as:
when a signal is input to the top input electrode of the top electrode 107, the signal passes through the input electrode of the saw filter 100, the output electrode of the saw filter 100, and the top output electrode of the top electrode 107 in sequence, and the saw filter 100 filters the signal in the signal transmission process.
S26, implanting gold balls 108 on the top electrode 107 by gold wire ball bonding process, specifically:
respectively planting a gold ball 108 on each top electrode 107 by using a gold ball bonding process, as shown in fig. 11 and 12, to obtain a combined packaged device; the connection with the package device can be realized through the gold ball 108, and the diameter range of the gold wire and the parameters such as the diameter and thickness of the gold ball 108 used in the gold wire ball bonding process can be set according to the actual situation, which is not described herein again.
S27, dividing to obtain at least one packaging device with the surface acoustic wave filter, specifically:
and cutting the combined packaging device by adopting a laser cutting or grinding wheel scribing mode. The laser cutting method has high precision, and can effectively avoid pollution caused by excess materials brought by cutting, improve the yield of the produced packaged device, and obtain the packaged device as shown in fig. 13 (the gold ball 108 is not shown).
It can be understood that: after S25, S27 may be executed first, and then S26 is executed, specifically: firstly, the combined packaging device is divided by adopting a laser cutting mode. Then, gold balls 108 are implanted on the top electrode 107 by a gold ball bonding process, so as to obtain a packaged device.
In the foregoing embodiments, although the steps are numbered as S1, S2, etc., but only the specific embodiments are given in this application, and those skilled in the art may adjust the execution order of S1, S2, etc. according to the actual situation, which is also within the protection scope of the present invention, and it is understood that some embodiments may include some or all of the above embodiments.
As shown in fig. 13, a packaged device according to an embodiment of the present invention is a packaged device manufactured by using any one of the above-described methods for packaging a surface acoustic wave filter 100.
In the present invention, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention.
In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (9)
1. A method of packaging a surface acoustic wave filter, comprising:
preparing a polymer bonding layer on a chip wafer with at least one surface acoustic wave filter, wherein the polymer bonding layer comprises a plurality of polymer bonding patterns, each polymer bonding pattern is laid on an electrode of the corresponding surface acoustic wave filter, and part of the electrode of each surface acoustic wave filter is exposed outside;
crimping a packaging wafer on the polymer bonding layer;
manufacturing a plurality of top electrodes on the other surface of the packaging wafer, wherein each top electrode is respectively connected with the exposed part of the electrode on each surface acoustic wave filter, so that a combined packaging device is obtained;
and dividing the combined packaging device to obtain at least one packaging device with the surface acoustic wave filter.
2. A method for packaging a surface acoustic wave filter as claimed in claim 1, wherein at least one recess is formed on a surface of the package wafer, and the pressing the package wafer onto the polymer bonding layer comprises:
and pressing the packaging wafer on the polymer bonding layer, wherein the grooves and the polymer bonding patterns are arranged in a staggered mode, and the opening direction of the grooves faces to the chip wafer.
3. A method for packaging a surface acoustic wave filter as claimed in claim 2, further comprising, before fabricating a top electrode on the other surface of the package wafer:
thinning the packaging wafer until the bottom of the groove is exposed to obtain a thinned packaging wafer;
the manufacturing of the top electrode on the other surface of the packaging wafer comprises:
and manufacturing a top electrode on the other surface of the thinned packaging wafer.
4. A method for packaging a surface acoustic wave filter as claimed in claim 3, wherein before the fabricating the top electrode on the other surface of the partially packaged wafer, the method further comprises: and polishing the surface of the thinned packaging wafer.
5. The method of packaging a surface acoustic wave filter as set forth in claim 4, wherein said dividing said combined packaged device comprises:
and cutting the combined packaging device by adopting a laser cutting or grinding wheel scribing mode.
6. The method of packaging a surface acoustic wave filter according to any one of claims 1 to 5, further comprising:
and planting gold balls on the top electrode by adopting a gold wire ball welding process.
7. The method of claim 6, wherein said forming a polymer bonding layer on a chip wafer having at least one saw filter formed thereon comprises:
and preparing a polymer bonding layer on the chip wafer with at least one surface acoustic wave filter through an alignment process.
8. The method of packaging a surface acoustic wave filter as claimed in any one of claims 1 to 5, wherein the package wafer and the chip wafer are made of the same piezoelectric material.
9. A packaged device manufactured by a method of packaging a surface acoustic wave filter according to any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011527973.2A CN112652545A (en) | 2020-12-22 | 2020-12-22 | Packaging method and packaging device for surface acoustic wave filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011527973.2A CN112652545A (en) | 2020-12-22 | 2020-12-22 | Packaging method and packaging device for surface acoustic wave filter |
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