CN112629674A - Graphene oxide assisted infrared thermopile detector - Google Patents
Graphene oxide assisted infrared thermopile detector Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 58
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/82—Connection of interconnections
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
- H10N19/101—Multiple thermocouples connected in a cascade arrangement
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Abstract
The invention provides an infrared thermopile detector assisted by graphene oxide. According to the invention, the graphene oxide film is arranged on the infrared absorption layer of the infrared thermopile detector, and the characteristics of low insulation and heat conduction and strong infrared absorption of the graphene oxide film are utilized to improve the infrared absorption rate, so that the sensitivity of the infrared thermopile detector is improved. The results of the examples show that the infrared absorption capacity of the infrared thermopile detector of the present invention is improved by 61.1% and the response rate is improved by 89.9% compared to the infrared thermopile detector without a graphene oxide film.
Description
Technical Field
The invention belongs to the technical field of infrared thermopile detectors, and particularly relates to an infrared thermopile detector assisted by graphene oxide.
Background
In 2020, the new type of coronavirus is widely spread in many countries of the world, and the "red" worldwide product belongs to various epidemic-resistant thermometric instruments, wherein the most central device is an infrared detector, and essentially, infrared detection is a radiation energy conversion technology which can convert the received infrared radiation energy into other forms of energy convenient for measurement or observation. Infrared detectors are generally classified into thermal detectors and photon detectors, and compared with photon detectors, thermal detectors have the advantages of low price, small size, no need of refrigeration, mature technology and the like.
The infrared thermopile detector is one of the heat detectors, can realize non-contact temperature measurement, has high sensitivity, and is the epidemic prevention necessity of the most fiery heat. The infrared thermopile detector is mainly formed by connecting unit thermocouples in series and adopting an integrated circuit process and a micro-mechanical process, has the advantages of small volume, light weight, low power consumption, high reliability, batch production and the like, and is widely applied to the industries of infrared search, non-contact temperature measurement, security protection, intelligent electrical appliances, harmful gas monitoring and the like.
The responsivity is an important performance index for describing the infrared thermopile detector, and determines the application field of the infrared detector. The responsivity is the ratio of the output signal of the device to the incident infrared radiation power, describes the signal size capability generated by unit radiation power incident on the detector, and characterizes the sensitivity of the infrared detector in responding to infrared radiation. For infrared thermopile detectors with defined structures and parameters, enhancing the absorption rate of the infrared absorption region is an effective method for improving the response rate of the infrared thermopile detector. In recent years, researchers have developed a variety of materials or structures that improve infrared absorption. If the black gold with high infrared absorptivity is used as an absorption layer, the preparation process of the black gold is complicated, the cost is high, the adhesiveness is poor, and the compatibility with a micro-mechanical process is poor; adding an anti-reflection layer germanium layer to the absorption layer also improves the infrared absorption rate, but the efficiency is not high. Although these materials can enhance the absorption rate of the infrared absorption region to some extent, the response rate is difficult to meet due to the defects of compatibility and efficiency, and the sensitivity is not high. Therefore, there is a need for an improved infrared thermopile detector, which further increases its sensitivity.
Disclosure of Invention
The invention aims to provide an infrared thermopile detector assisted by graphene oxide. The infrared thermopile detector provided by the invention has excellent sensitivity.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides an infrared thermopile detector assisted by graphene oxide.
Preferably, the graphene oxide film has a thickness of 10 to 500 nm.
Preferably, the graphene oxide film has a thickness of 20 to 100 nm.
Preferably, the graphene oxide film has a thickness of 86-91 nm.
Preferably, the infrared thermopile detector includes a substrate, a dielectric support layer, a thermopile assembly, an infrared absorbing layer, and a graphene oxide film;
a concave thermal isolation cavity is arranged in the center of the substrate;
the medium supporting layer is arranged above the substrate, covers the concave thermal isolation cavity and is supported by a peripheral frame of the substrate;
the thermopile assembly is disposed on the media support layer; the thermoelectric stack assembly is formed by connecting a plurality of thermocouples in series; the hot end of the thermocouple is positioned right above the concave thermal isolation cavity; the cold end of the thermocouple is positioned right above the substrate peripheral frame and is connected with the substrate through a medium supporting layer;
at least one metal electrode is led out from the cold end of the thermoelectric stack assembly;
the infrared absorption layer is positioned on the surface of the hot end of the thermoelectric stack assembly.
Preferably, the dielectric support layer is a silicon dioxide film or a silicon nitride film.
Preferably, the thickness of the medium supporting layer is 0.1-10 μm.
Preferably, the thermocouple comprises a first thermocouple strip and a second thermocouple strip; one ends of the first thermocouple strip and the second thermocouple strip are connected to form a hot end, and the other ends of the first thermocouple strip and the second thermocouple strip are isolated through an electric insulating layer to form a cold end.
Preferably, the infrared absorption layer is a silicon nitride film or a silicon nitride-silicon oxide composite film.
Preferably, the thickness of the infrared absorption layer is 0.01-10 μm.
The invention provides an infrared thermopile detector assisted by graphene oxide. According to the invention, the graphene oxide film is arranged on the infrared absorption layer of the infrared thermopile detector, and the characteristics of low insulation and heat conduction and strong infrared absorption of the graphene oxide film are utilized to improve the infrared absorption rate, so that the sensitivity of the infrared thermopile detector is improved. The results of the examples show that the infrared absorption capacity of the infrared thermopile detector of the present invention is improved by 61.1% and the response rate is improved by 89.9% compared to the infrared thermopile detector without a graphene oxide film.
Drawings
FIG. 1 is a schematic front view of an infrared thermopile detector in accordance with an embodiment of the present invention;
in the figure, 1 is a substrate, 2 is a dielectric support layer, 3 is a first thermocouple strip, 4 is an electrical insulation layer, 5 is a second thermocouple strip, 6 is a metal electrode, 7 is an infrared absorption layer, 8 is a graphene oxide film, and 9 is a thermopile assembly;
FIG. 2 is a schematic top view showing the structure of the infrared thermopile detector of example 1;
in the figure, 1 is a substrate, 2 is a medium supporting layer, 6 is a metal electrode, 7 is an infrared absorption layer silicon nitride, and 8 is a graphene oxide film;
FIG. 3 is a schematic top view of an infrared thermopile detector of comparative example 1;
in the figure, 1 is a substrate, 2 is a medium supporting layer, 6 is a metal electrode, and 7 is an infrared absorption layer silicon nitride;
FIG. 4 is a Fourier transform infrared absorption spectrum of the infrared thermopile detectors of example 1 and comparative example 1;
FIG. 5 is a graph comparing the responsivity of the infrared thermopile detector of example 1 and comparative example 1;
fig. 6 is a graph showing the relationship between the graphene oxide film and the output voltage of the infrared thermopile detector according to the present invention.
Detailed Description
The invention provides an infrared thermopile detector assisted by graphene oxide.
As shown in fig. 1, in one embodiment of the present invention, a graphene oxide film 8 is disposed on the infrared absorption layer of the infrared thermopile detector. In the present invention, the thickness of the graphene oxide film is preferably 10 to 500nm, more preferably 20 to 100nm, even more preferably 50 to 95nm, and most preferably 86 to 91 nm. The preparation method of the graphene oxide film is not particularly limited, and the graphene oxide film can be prepared by a preparation method well known to those skilled in the art. The operation of transferring the graphene oxide film to the infrared absorption layer is not particularly limited in the present invention, and the operation of transferring the thin film to the device component known to those skilled in the art may be employed.
In the invention, the graphene oxide film has the characteristics of insulation, low heat conduction and strong infrared absorption, and the infrared absorption rate can be improved by arranging the graphene oxide film on the infrared absorption layer, so that the sensitivity of the infrared thermopile detector is improved; when the thickness of the graphene oxide film is within the range, the infrared absorption rate can be further improved by utilizing the atomic-level thickness of the graphene oxide film, so that the sensitivity of the infrared thermopile detector is further improved, and the effect of improving the infrared absorption rate due to the influence of over-thickness or over-thinness of the graphene oxide film is avoided.
In one embodiment of the invention, a schematic front view structure of the infrared thermopile detector is shown in fig. 1, and includes a substrate 1, a medium support layer 2, a thermopile assembly 9, an infrared absorption layer 7, and a graphene oxide film 8.
In one embodiment of the invention, as shown in fig. 1, the infrared thermopile detector includes a substrate 1. In the invention, the substrate is preferably made of monocrystalline silicon; the thickness of the substrate is preferably 8-2000 μm, and more preferably 10-1000 μm.
In one embodiment of the invention, the substrate is centrally provided with a concave thermal isolation cavity. In the invention, the concave thermal isolation cavity is arranged in the center of the substrate, so that the temperature difference between the cold end and the hot end of the thermoelectric stack can be further increased, and the sensitivity is further improved.
The size of the substrate is not particularly limited, and the substrate can be adjusted according to the use requirement. The method for preparing the substrate is not particularly limited in the present invention, and a preparation method known to those skilled in the art may be used. The preparation method of the concave thermal isolation cavity is not particularly limited, and the preparation method known to those skilled in the art can be adopted. The size of the concave thermal isolation cavity is not particularly limited, and the concave thermal isolation cavity can be adjusted according to the size of the substrate.
In one embodiment of the invention, as shown in FIG. 1, the infrared thermopile detector comprises a dielectric support layer 2; the medium support layer 2 is arranged above the substrate 1, covers the concave thermal isolation cavity and is supported by a peripheral frame of the substrate 1. In the invention, the dielectric support layer is preferably a silicon dioxide film or a silicon nitride film; the thickness of the medium supporting layer is preferably 0.1-10 μm, more preferably 0.5-5 μm, and even more preferably 0.8-2 μm. The size of the medium supporting layer is not specially limited, and the medium supporting layer can be adjusted according to the use requirement. The preparation method of the medium support layer is not particularly limited in the invention, and the preparation method well known to those skilled in the art can be adopted. In the present invention, the dielectric support layer functions to support the thermopile assembly.
As shown in FIG. 1, in one embodiment of the present invention, the infrared thermopile detector includes a thermopile assembly 9; the thermopile assembly 9 is arranged on the medium support layer 2; the thermopile assembly 9 is formed by connecting a plurality of thermocouples in series.
As shown in fig. 1, in one embodiment of the present invention, each thermocouple comprises a first thermocouple strip 3 and a second thermocouple strip 5; one ends of the first thermocouple strip 3 and the second thermocouple strip 5 are connected to form a hot end of the thermocouple, and the other ends of the first thermocouple strip and the second thermocouple strip are isolated by the electric insulating layer 4 to form a cold end of the thermocouple. In the invention, the cold ends of the thermocouples form the cold ends of the thermopile assembly, and the hot ends of the thermocouples form the hot ends of the thermopile assembly; and cold ends of the thermocouples are connected in series through metal electrodes to realize the series connection of the thermocouples.
In the invention, the thickness of the first thermocouple strip is preferably 0.01-5 μm, more preferably 0.1-1 μm, and even more preferably 200-500 nm; the thickness of the second thermocouple strip is preferably 0.01-5 μm, more preferably 0.1-1 μm, and even more preferably 200-500 nm.
In one embodiment of the invention, the seebeck coefficients of the first thermocouple strips 3 and the second thermocouple strips 5 are different. The material of the first thermocouple strip and the second thermocouple strip is not particularly limited, and the thermocouple strips known to those skilled in the art can be used. The method for preparing the first thermocouple strip and the second thermocouple strip is not particularly limited, and the preparation method known to those skilled in the art can be adopted.
In the present invention, the thickness of the electrically insulating layer is preferably 0.1 to 8 μm, more preferably 0.2 to 5 μm, and still more preferably 0.5 to 1 μm. The material of the electrical insulating layer is not particularly limited in the present invention, and an electrical insulating layer known to those skilled in the art may be used. The size of the electric insulating layer is not particularly limited, and can be adjusted according to the use requirement.
As shown in fig. 1, in an embodiment of the present invention, the hot end of the thermocouple is located right above the concave thermal isolation cavity, and the cold end of the thermocouple is located right above the substrate peripheral frame and is connected to the substrate through the dielectric support layer; at least one metal electrode 6 is led out from the cold end of the thermoelectric stack assembly. In the present invention, the metal electrode is used for testing an output voltage. The material of the metal electrode is not particularly limited in the present invention, and a metal electrode known to those skilled in the art may be used. The size of the metal electrode is not specially limited, and the metal electrode can be adjusted according to the use requirement. In the invention, the cold end of the thermocouple is positioned right above the substrate peripheral frame, and the hot end of the thermocouple is positioned right above the concave thermal isolation cavity, so that the temperature difference between the cold end and the hot end of the thermocouple can be further increased, the temperature difference between the cold end and the hot end of the thermopile assembly is further increased, and the sensitivity of the infrared thermopile detector is favorably improved.
In one embodiment of the present invention, the plurality of thermocouples in the thermopile assembly are not uniform in length; the cold ends of the thermocouples are arranged in order, and the hot ends of the thermocouples are arranged in an X shape. The number of the thermocouples is not specially limited, and the number of the thermocouples can be adjusted according to the use requirement. In the invention, the hot ends of the thermocouples in the thermopile assembly which are heated by connecting thermocouples with different lengths in series are arranged in an X shape, so that the space area can be fully utilized.
As shown in fig. 1, in one embodiment of the invention, the infrared thermopile detector includes an infrared absorbing layer 7; the infrared absorption layer is positioned on the surface of the hot end of the thermoelectric stack assembly. According to the invention, the infrared absorption layer is arranged at the hot end of the thermopile assembly and is far away from the cold end, most of absorbed heat is directly transmitted to the hot end of the thermopile assembly through the infrared absorption layer, and the temperature difference between the hot end and the cold end of the thermopile assembly is further increased, so that the sensitivity of the infrared thermopile detector is improved.
As shown in fig. 1, in an embodiment of the present invention, the infrared absorption layer 7 covers the hot side surface of the thermocouple and is discontinuously distributed on the hot side surface of the thermopile assembly.
In the invention, the infrared absorption layer is preferably a silicon nitride film or a silicon nitride-silicon oxide composite film; the thickness of the infrared absorption layer is preferably 0.01-10 μm, more preferably 15-1000 nm, and even more preferably 50-550 nm. The preparation method of the infrared absorption layer is not particularly limited in the present invention, and the infrared absorption layer can be prepared by a preparation method well known to those skilled in the art. The size of the infrared absorption layer is not particularly limited, and can be adjusted according to the use requirement. In the invention, when the infrared absorption layer is made of the film material, the infrared absorption rate can be further improved, so that the sensitivity of the infrared thermopile detector is improved; when the thickness of the infrared absorption layer is within the range, the improvement of the infrared absorption rate is facilitated, so that the improvement of the sensitivity is realized.
According to the invention, the graphene oxide film is arranged on the infrared absorption layer of the infrared thermopile detector, and the characteristics of insulation, atomic-scale thickness, low heat conduction and strong infrared absorption of the graphene oxide film are utilized to improve the infrared absorption rate, so that the sensitivity of the infrared thermopile detector is improved.
The technical solution of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
As shown in fig. 1, the infrared thermopile detector structure of the present embodiment includes a substrate 1, a dielectric support layer 2, a metal electrode 6, an infrared absorption layer 7, a graphene oxide film 8, and a thermopile assembly 9;
the schematic diagram of the top view structure of the infrared thermopile detector is shown in fig. 2, and as can be seen from fig. 2, a graphene oxide film is arranged on the infrared absorption layer of the infrared thermopile detector;
the substrate 1 is a monocrystalline silicon substrate, and the thickness is 2000 mu m; the medium supporting layer 2 is a silicon dioxide film with the thickness of 800 nm; the first thermocouple strips 3 are polysilicon thermocouple strips, and the thickness is 600 nm; the second thermocouple strips 5 are aluminum thermocouple strips, and the thickness is 500 nm; the electric insulating layer 4 is a silicon dioxide electric insulating layer with the thickness of 500 nm; the metal electrode 6 is a gold electrode; the infrared absorption layer 7 is a silicon nitride film with the thickness of 550 nm; the graphene oxide film has a thickness of 86 nm;
a concave thermal isolation cavity is arranged in the center of the substrate 1 and is obtained by etching part of the silicon substrate;
the medium support 2 is arranged above the substrate 1, covers the concave thermal isolation cavity and is supported by a peripheral frame of the substrate 1;
the thermopile assembly 9 is arranged on the medium support layer 2; the thermopile assembly 9 is formed by connecting a plurality of thermocouples in series, and each thermocouple comprises a first thermocouple strip 3 and a second thermocouple strip 5; one ends of the first thermocouple strip 3 and the second thermocouple strip 5 are connected to form a hot end of the thermocouple, and the other ends of the first thermocouple strip and the second thermocouple strip are isolated by the electric insulating layer 4 to form a cold end of the thermocouple; the cold ends of the thermocouples form the cold ends of the thermopile assembly 9, and the hot ends of the thermocouples form the hot ends of the thermopile assembly 9; the cold ends of the thermocouples are connected in series through metal electrodes to realize the series connection of the thermocouples;
the hot end of the thermocouple is positioned right above the concave thermal isolation cavity, and the cold end of the thermocouple is positioned right above the peripheral frame of the substrate 1 and is connected with the substrate 1 through a medium supporting layer 2;
a metal electrode 6 is led out of the cold end of the thermopile assembly and used for testing output voltage;
the hot ends of the thermocouples are arranged in an X shape;
the infrared absorption layer 7 is distributed on the surface of the hot end of the thermopile assembly in a discontinuous way;
the graphene oxide film 8 is provided on the partial infrared absorption layer 7.
Comparative example 1
The schematic diagram of the top view structure of the infrared thermopile detector is shown in fig. 3, and it can be seen from fig. 3 that the graphene oxide film is not disposed on the infrared absorption layer of the infrared thermopile detector, in addition to the infrared thermopile detector in example 1, the rest remains unchanged.
In order to verify the influence of the graphene oxide film on the performance of the infrared thermopile detector, the thermopile detectors provided in example 1 and comparative example 1 were characterized and tested.
FIG. 4 is a Fourier transform infrared absorption spectrum of the infrared thermopile detectors of example 1 and comparative example 1. As can be seen from fig. 4, the infrared absorption capacity of the detector of example 1 provided with the graphene oxide film is improved by 61.1% compared to the thermopile detector 1 not provided with the graphene oxide film in the comparative example, indicating that the presence of the graphene oxide film enhances the infrared absorption capacity of the thermopile detector.
FIG. 5 is a graph comparing the responsivity of the infrared thermopile detectors of example 1 and comparative example 1. As can be seen from fig. 5, the response rate of the infrared thermopile detector of example 1 provided with the graphene oxide film is improved by 89.9% compared to the infrared thermopile detector of comparative example 1 not provided with the graphene oxide film, and the response rate of the infrared thermopile detector prepared in example 1 is 705.1V/W at a temperature of 310K.
Comparative examples 2 to 9
The graphene oxide film was omitted on the basis of the infrared thermopile detector in example 1, and the infrared absorption layer material was modified so that the responsivity of the infrared absorption layer material was as shown in table 1, and the rest remained unchanged.
TABLE 1 Infrared absorbing layer materials and responsivities of comparative examples 2-9
| Experiment of | Infrared absorbing layer | Response Rate (V/W) |
| Comparative example 2 | Black gold | 63.10 |
| Comparative example 3 | Metal/insulation/metal type plasma metamaterial absorber | 92.17 |
| Comparative example 4 | Titanium nitride | 425.70 |
| Comparative example 5 | Silicon nitride/silicon oxide/silicon nitride/silicon oxide | 302.30 |
| Comparative example 6 | Silicon oxide | 160.03 |
| Comparative example 7 | Silicon nitride/reduced graphene oxide | 14.553 |
| Comparative example 8 | Silicon oxide/silicon nitride | 102.00 |
| Comparative example 9 | Silicon nitride/carbon black | 31.65 |
As can be seen from table 1, the response rate of the infrared thermopile detector in example 1 is much higher than that of comparative examples 2 to 9, which indicates that the graphene oxide film disposed on the infrared absorption layer silicon nitride film can significantly improve the sensitivity of the detector.
To verify the effect of the thickness variation of the graphene oxide film on the performance of the infrared thermopile detector, the thickness of the graphene oxide film in example 1 was adjusted, and the result is shown in fig. 6. Fig. 6 is a graph showing the relationship between the graphene oxide film and the output voltage of the infrared thermopile detector according to the present invention. As can be seen from fig. 6, the output voltage of the thermopile detector of the present invention increases first and then decreases as the graphene oxide film thickness increases, and the performance of the thermopile detector is the best at 86 nm.
As can be seen from the above comparative examples and examples, the infrared thermopile detector provided by the present invention has excellent sensitivity.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. The utility model provides an infrared thermopile detector assisted to graphene oxide, be equipped with the graphene oxide membrane on infrared absorption layer of infrared thermopile detector.
2. The infrared thermopile detector of claim 1, wherein the graphene oxide film has a thickness of 10-500 nm.
3. The infrared thermopile detector of claim 2, wherein the graphene oxide film has a thickness of 20-100 nm.
4. The infrared thermopile detector of claim 3, wherein the graphene oxide film has a thickness of 86-91 nm.
5. The infrared thermopile detector of any one of claims 1 to 3, wherein the infrared thermopile detector comprises a substrate, a dielectric support layer, a thermopile assembly, an infrared absorbing layer, and a graphene oxide film;
a concave thermal isolation cavity is arranged in the center of the substrate;
the medium supporting layer is arranged above the substrate, covers the concave thermal isolation cavity and is supported by a peripheral frame of the substrate;
the thermopile assembly is disposed on the media support layer; the thermoelectric stack assembly is formed by connecting a plurality of thermocouples in series; the hot end of the thermocouple is positioned right above the concave thermal isolation cavity; the cold end of the thermocouple is positioned right above the substrate peripheral frame and is connected with the substrate through a medium supporting layer;
at least one metal electrode is led out from the cold end of the thermoelectric stack assembly;
the infrared absorption layer is positioned on the surface of the hot end of the thermoelectric stack assembly.
6. The infrared thermopile detector of claim 5, wherein the dielectric support layer is a silicon dioxide film or a silicon nitride film.
7. The infrared thermopile detector of claim 5 or 6, wherein the thickness of the dielectric support layer is 0.1-10 μm.
8. The infrared thermopile detector of claim 5, wherein the thermocouple comprises a first thermocouple strip and a second thermocouple strip; one ends of the first thermocouple strip and the second thermocouple strip are connected to form a hot end of the thermocouple, and the other ends of the first thermocouple strip and the second thermocouple strip are isolated by the electric insulating layer to form a cold end of the thermocouple.
9. The infrared thermopile detector of claim 1 or 5, wherein the infrared absorbing layer is a silicon nitride film or a silicon nitride-silicon oxide composite film.
10. The infrared thermopile detector of claim 9, wherein the infrared absorbing layer has a thickness of 0.01-10 μm.
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