CN113203493B - Temperature detecting device - Google Patents
Temperature detecting device Download PDFInfo
- Publication number
- CN113203493B CN113203493B CN202110487938.0A CN202110487938A CN113203493B CN 113203493 B CN113203493 B CN 113203493B CN 202110487938 A CN202110487938 A CN 202110487938A CN 113203493 B CN113203493 B CN 113203493B
- Authority
- CN
- China
- Prior art keywords
- layer
- heat
- semiconductor
- temperature
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
Abstract
The application relates to a temperature detection device, in particular to the field of temperature detection. The application provides a temperature detection device, the device includes: the semiconductor device comprises a heat absorption layer, a semiconductor column, a heat insulation layer, an insulation layer, a graphene layer, a first electrode and a second electrode; when the temperature detection device detects the external temperature, the heat absorption layer absorbs the external heat and transfers the heat to the semiconductor column, so that the temperature of one side of the short end of the semiconductor column with the T-shaped structure is raised, and because the temperature of the long end of the semiconductor column close to one end of the graphene layer is unchanged, a certain temperature difference exists between the two ends of the semiconductor column, and then carriers on the semiconductor column are gathered on the graphene layer, so that the conductive characteristic of the graphene layer is changed.
Description
Technical Field
The application relates to the field of temperature detection, in particular to a temperature detection device.
Background
Temperature is a physical quantity representing the degree of heat and cold of an object, and microscopically, the degree of thermal motion of molecules of the object. The temperature can only be indirectly measured through some characteristics of the object changing along with the temperature, and with the development of science, the requirement on the accuracy of temperature measurement is higher and higher.
In the prior art, an electronic thermometer is generally adopted to realize more accurate temperature measurement, and the electronic thermometer adopts a temperature sensor to measure the temperature according to the relation between resistance and current.
However, the resistance of the electronic thermometer varies with changes in temperature at different temperatures, making the measurement of temperature inaccurate.
Disclosure of Invention
The present invention is directed to a temperature detecting device, which solves the problem of inaccurate temperature measurement caused by the resistance of an electronic thermometer changing due to temperature changes at different temperatures in the prior art.
In order to achieve the above purpose, the embodiment of the present invention adopts the following technical solutions:
in a first aspect, the present application provides a temperature sensing device, the device comprising: the semiconductor device comprises a heat absorption layer, a semiconductor column, a heat insulation layer, an insulation layer, a graphene layer, a first electrode and a second electrode; insulating layer and insulating layer intermediate position all are provided with the through-hole, and the insulating layer sets up the one side at graphite alkene layer, the insulating layer setting is kept away from graphite alkene layer in one side of insulating layer, first electrode and second electrode set up respectively at graphite alkene layer's both ends, the shape of semiconductor column is "T" shape structure, the hole of insulating layer and graphite alkene layer is passed in proper order to the long end of the semiconductor column of "T" shape structure, and with graphite alkene layer's surface contact, the heat-sink shell cover is established in short-end one side of semiconductor column, and give the semiconductor column with heat transfer.
Optionally, the surface of the heat absorbing layer is covered and provided with a black chromium coating.
Optionally, the device further comprises a thermally conductive layer disposed between the heat sink layer and the semiconductor pillars.
Optionally, the surface of the heat conducting layer is provided with a groove, the size of the groove is equal to the size of the short end of the semiconductor pillar in the T-shaped structure, and the groove of the heat conducting layer is nested with the short end of the semiconductor pillar in the T-shaped structure.
Optionally, the short end of the semiconductor pillar is provided with a plurality of holes.
Optionally, the apparatus further comprises heat transfer wires connected to the heat conducting layer through a plurality of holes at the short ends of the semiconductor pillars.
Optionally, the graphene layer is a multi-layer graphene structure.
Optionally, the semiconductor pillar is made of an indium antimonide material.
The invention has the beneficial effects that:
the application provides a temperature detection device, the device includes: the semiconductor device comprises a heat absorption layer, a semiconductor column, a heat insulation layer, an insulation layer, a graphene layer, a first electrode and a second electrode; the semiconductor column is in a T-shaped structure, the long end of the semiconductor column with the T-shaped structure sequentially penetrates through the insulating layer and the holes of the graphene layer and is in contact with the surface of the graphene layer, and the heat absorption layer is covered on one side of the short end of the semiconductor column and transfers heat to the semiconductor column; when the temperature detecting device detects the external temperature, the heat absorbing layer absorbs the external heat and transfers the heat to the semiconductor column, so that the temperature of the short end side of the semiconductor column with the T-shaped structure is raised, and because the temperature of the long end of the semiconductor column close to one end of the graphene layer is unchanged, a certain temperature difference exists between the two ends of the semiconductor column, so that the current carriers on the semiconductor column move to the side close to the graphene layer from the short end close to one side of the heat absorbing layer, and then the current carriers on the semiconductor column are gathered on the graphene layer, so that the conductive characteristic of the graphene layer is changed, further the conductivity between the first electrode and the second electrode is changed, and by detecting the change condition of the conductivity between the first electrode and the second electrode, and according to the corresponding relation between the change condition of the conductivity between the first electrode and the second electrode and the temperature to be detected, obtain the temperature that awaits measuring to this application will turn into the conductivity change condition on graphite alkene layer to the detection of temperature, and the conductivity change on graphite alkene layer is comparatively sensitive, makes the detection of the device of this application to the temperature more accurate, sensitive.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a temperature detecting device according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another temperature detecting device according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another temperature detecting device according to an embodiment of the present invention.
Icon: 10-a heat sink layer; 20-semiconductor columns; 30-a thermal insulation layer; 40-an insulating layer; 50-a graphene layer; 60-a first electrode; 70-a second electrode; 80-thermally conductive layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiment is one embodiment of the present invention, and not all embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or the orientations or positional relationships that the products of the present invention are conventionally placed in use, and are only used for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another, and are not to be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal", "vertical" and the like do not imply that the components are absolutely horizontal or hanging, but may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In order to make the implementation of the present invention clearer, the following detailed description is made with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a temperature detection device according to an embodiment of the present invention; as shown in fig. 1, the present application provides a temperature detection apparatus, the apparatus comprising: the semiconductor device comprises a heat absorption layer 10, a semiconductor column 20, a heat insulation layer 30, an insulation layer 40, a graphene layer 50, a first electrode 60 and a second electrode 70; the insulating layer 40 and the insulating layer 30 intermediate position all are provided with the through-hole, and insulating layer 40 sets up the one side at graphite alkene layer 50, insulating layer 30 sets up the one side of keeping away from graphite alkene layer 50 at insulating layer 40, first electrode 60 and second electrode 70 set up the both ends at graphite alkene layer 50 respectively, the shape of semiconductor column 20 is "T" shape structure, the hole of insulating layer 40 and graphite alkene layer 50 is passed in proper order to the long end of the semiconductor column 20 of "T" shape structure, and with the surface contact of graphite alkene layer 50, heat absorbing layer 10 covers the short end one side of establishing semiconductor column 20, and give semiconductor column 20 heat transfer.
The graphene layer 50 is disposed at the bottom of the temperature detecting apparatus of the present application, the first electrode 60 and the second electrode 70 are disposed on two sides of the graphene layer 50, that is, by measuring the current or voltage of the first electrode 60 and the second electrode 70, the current or voltage of the graphene layer 50 disposed between the first electrode 60 and the second electrode 70 can be obtained, and according to the relationship between the current or voltage and the resistance, the resistance of the graphene layer 50 can be obtained, the conduction condition of the graphene layer 50 is related to the concentration of carriers inside the graphene layer 50, since the insulating layer 40 and the thermal insulation layer 30 are disposed on the upper surface of the graphene layer 50, and a hole is disposed between the insulating layer 40 and the thermal insulation layer 30, the semiconductor column 20 is in a "T" shape, and the long end of the semiconductor column 20 in the "T" shape sequentially passes through the holes of the insulating layer 40 and the graphene layer 50, the semiconductor column 20 is made of a semiconductor material, and carriers in the semiconductor column 20 can be oriented under the action of heat, that is, the carriers are transferred from one end of the semiconductor column 20 close to the heat absorbing layer 10 to one end close to the graphene layer 50, because the semiconductor column 20 is in contact with the surface of the graphene layer 50, the carriers enter the graphene layer 50 from the semiconductor column 20 to change the conductivity of the graphene layer 50, and because the semiconductor column 20 is sequentially sleeved in the holes in the heat insulating layer 30 and the insulating layer 40, the heat insulating layer 30 insulates the influence of heat in other positions and directions on the device, and prevent the heat inside the device from overflowing, which causes inaccurate detection of temperature, the insulating layer 40 limits the movement of carriers on the semiconductor pillar 20, so that the carriers on the semiconductor pillar 20 move from the long end of the semiconductor pillar 20 with a "T" shaped structure to the short end of the semiconductor pillar 20 with a "T" shaped structure, then move onto the graphene layer 50, and limit the movement of the carriers from the graphene layer 50 to the semiconductor pillar 20, when the temperature detection device detects the external temperature, the heat absorption layer 10 absorbs the external heat and transfers the heat to the semiconductor pillar 20, so that the temperature of the short end side of the semiconductor pillar 20 with a "T" shaped structure rises, and since the temperature of the long end of the semiconductor pillar 20 near one end of the semiconductor pillar 50 does not change, there is a certain temperature difference between the two ends of the graphene layer 20, so that the carriers on the pillar 20 move from the short end near one side of the heat absorption layer 10, move to and be close to this graphite alkene layer 50 one side, and then the carrier on this semiconductor post 20 assembles on this graphite alkene layer 50, thereby change this graphite alkene layer 50's conductive characteristic, and then make the conductivity between this first electrode 60 and the second electrode 70 change, through the change condition that detects the conductivity between this first electrode 60 and the second electrode 70, and according to the change condition of the conductivity between this first electrode 60 and the second electrode 70 and the corresponding relation of the temperature that awaits measuring, obtain the temperature that awaits measuring, and this application will turn into the conductivity change condition of graphite alkene layer 50 to the detection of temperature, and the conductivity change of graphite alkene layer 50 is comparatively sensitive, make the detection of this application's device to the temperature more accurate, it is sensitive.
The term thermoelectric effect is interpreted to mean a phenomenon in which an electron or a hole in a heated object generates a current or a charge accumulation when moving from a high temperature region to a low temperature region according to a temperature gradient
The application has the specific beneficial effects that: convert temperature detection into the detection of signal of telecommunication, the signal of telecommunication is the most reliable and stable information carrier at present, reflects the size of temperature through measuring the conductivity of graphite alkene layer 50, because graphite alkene is the material that carrier mobility is the highest, is influenced by the temperature weak moreover, so measure temperature very sensitive accurate like this, and the effect is stable, and the detection effect is difficult for receiving the interference, and detection method is simple and convenient.
Optionally, the surface of the heat absorbing layer 10 is covered with a black chrome coating.
The black chromium coating has strong heat absorption capacity and is used for being coated on the surface of the heat absorption layer 10, and when the device needs to absorb heat, the black chromium coating can shorten the time of absorbing heat, so that the device can detect the temperature more quickly.
Fig. 2 is a schematic structural diagram of another temperature detecting device according to an embodiment of the present invention; as shown in fig. 2, the device optionally further comprises a thermally conductive layer 80, the thermally conductive layer 80 being disposed between the heat sink layer 10 and the semiconductor pillars 20.
The heat conducting layer 80 is arranged between the heat absorbing layer 10 and the semiconductor column 20, is used for filling a gap between the heat absorbing layer 10 and the semiconductor column 20, and is used for transferring heat of the heat absorbing layer 10 to the semiconductor column 20, so that heat loss is reduced, and the accuracy of temperature detection of the device is improved.
Fig. 3 is a schematic structural diagram of another temperature detecting device according to an embodiment of the present invention; as shown in fig. 3, optionally, the surface of the heat conducting layer 80 is provided with a recess having a size equal to that of the short end of the semiconductor pillar 20 of the "T" shaped structure, and the recess of the heat conducting layer 80 is nested with the short end of the semiconductor pillar 20 of the "T" shaped structure.
The surface of the heat conduction layer 80 is provided with a groove, the groove and the short end of the semiconductor column 20 with the T-shaped structure are of a complementary structure, that is, the heat conduction layer 80 and the short end of the semiconductor column 20 with the T-shaped structure are nested, so that the contact area between the heat conduction layer 80 and the short end of the semiconductor column 20 with the T-shaped structure is increased, the semiconductor column 20 can absorb more heat, the movement of carriers is promoted, and the sensitivity of temperature induction is higher.
Optionally, the short end of the semiconductor pillar 20 is provided with a plurality of holes.
The holes formed at the short ends of the semiconductor pillars 20 can further increase the heat absorption of the semiconductor pillars 20 to the heat conducting layer 80, promote the movement of carriers, and increase the sensitivity of temperature sensing.
Optionally, the device further comprises heat transfer wires connected to the heat conductive layer 80 through a plurality of holes at the short ends of the semiconductor pillars 20.
The heat conducting wires pass through a plurality of holes at the short end of the semiconductor column 20 to be connected with the heat conducting layer 80, the material of the heat conducting wires is generally metal, and the heat conducting wires made of metal rapidly transfer the heat of the heat conducting layer 80 to the short end of the semiconductor column 20, so that the thermoelectric effect of the semiconductor column 20 is stronger, the carrier migration rate is greatly promoted, and the improvement of temperature detection sensitivity is facilitated.
Optionally, the graphene layer 50 is a multi-layer graphene structure.
The number of layers of the graphene layer 50 is set according to actual needs, and is not specifically limited herein, generally, the number of layers of the graphene layer 50 may be set to 2 to 10, which is beneficial to measuring the conductivity of the semiconductor column 20, so that the detection accuracy is higher.
Optionally, the material of the semiconductor pillar 20 is an indium antimonide material.
The invention has the beneficial effects that:
the application provides a temperature detection device, the device includes: the semiconductor device comprises a heat absorption layer 10, a semiconductor column 20, a heat insulation layer 30, an insulation layer 40, a graphene layer 50, a first electrode 60 and a second electrode 70; the insulating layer 40 and the insulating layer 30 are provided with through holes at the middle positions, the insulating layer 40 is arranged at one side of the graphene layer 50, the insulating layer 30 is arranged at one side of the insulating layer 40 far away from the graphene layer 50, the first electrode 60 and the second electrode 70 are respectively arranged at two ends of the graphene layer 50, the semiconductor pillar 20 is in a T-shaped structure, the long end of the semiconductor pillar 20 in the T-shaped structure sequentially penetrates through the holes of the insulating layer 40 and the graphene layer 50 and is in contact with the surface of the graphene layer 50, and the heat absorbing layer 10 covers one side of the short end of the semiconductor pillar 20 and transfers heat to the semiconductor pillar 20; when the temperature detecting device detects the external temperature, the heat absorbing layer 10 absorbs the external heat and transfers the heat to the semiconductor column 20, so that the temperature of the short end side of the semiconductor column 20 with the "T" shaped structure is raised, and because the temperature of the long end of the semiconductor column 20 close to one end of the graphene layer 50 is not changed, a certain temperature difference exists between the two ends of the semiconductor column 20, so that the carriers on the semiconductor column 20 move from the short end close to one side of the heat absorbing layer 10 to the side close to the graphene layer 50, and then the carriers on the semiconductor column 20 are gathered on the graphene layer 50, so as to change the conductive property of the graphene layer 50, and further change the conductivity between the first electrode 60 and the second electrode 70, by detecting the change of the conductivity between the first electrode 60 and the second electrode 70, and according to the corresponding relationship between the change of the conductivity between the first electrode 60 and the second electrode 70 and the temperature to be detected, obtain the temperature that awaits measuring to this application will be to the detection of temperature transform into the conductivity change condition of graphite alkene layer 50, and the conductivity change of graphite alkene layer 50 is comparatively sensitive, makes the detection of the device of this application to the temperature more accurate, sensitive.
The present invention has been described in terms of the preferred embodiment, and it is not intended to be limited to the embodiment. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A temperature sensing device, the device comprising: the device comprises a heat absorption layer, a semiconductor column, a heat insulation layer, an insulation layer, a graphene layer, a first electrode and a second electrode; the insulating layer with the insulating layer intermediate position all is provided with the through-hole, just the insulating layer sets up one side of graphite alkene layer, the insulating layer sets up the insulating layer is kept away from one side of graphite alkene layer, first electrode with the second electrode sets up respectively the both ends of graphite alkene layer, the shape of semiconductor column is "T" shape structure, "T" shape structure the long end of semiconductor column passes in proper order the insulating layer with the hole of graphite alkene layer, and with the surface contact of graphite alkene layer, the heat absorption layer cover is established short-end one side of semiconductor column to with the heat transfer for the semiconductor column.
2. The temperature detection device of claim 1, wherein a surface of the heat absorbing layer is covered with a black chrome coating.
3. The temperature sensing device of claim 2, further comprising a thermally conductive layer disposed between the heat sink layer and the semiconductor pillar.
4. The temperature detecting device according to claim 3, wherein the surface of the heat conducting layer is provided with a recess having a size equal to a short end of the semiconductor pillar of the "T" shaped structure, and the recess of the heat conducting layer is nested with the short end of the semiconductor pillar of the "T" shaped structure.
5. The temperature detecting device of claim 4, wherein the short end of the semiconductor pillar is provided with a plurality of holes.
6. The temperature sensing device of claim 5, further comprising heat transfer wires connected to the thermally conductive layer through a plurality of holes at the short ends of the semiconductor pillars.
7. The temperature detection apparatus of claim 6, wherein the graphene layer is a multi-layer graphene structure.
8. The temperature detecting device according to any one of claims 1 to 7, wherein the semiconductor pillar is made of indium antimonide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110487938.0A CN113203493B (en) | 2021-04-30 | 2021-04-30 | Temperature detecting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110487938.0A CN113203493B (en) | 2021-04-30 | 2021-04-30 | Temperature detecting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113203493A CN113203493A (en) | 2021-08-03 |
| CN113203493B true CN113203493B (en) | 2022-07-19 |
Family
ID=77029837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110487938.0A Active CN113203493B (en) | 2021-04-30 | 2021-04-30 | Temperature detecting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113203493B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465977A (en) * | 2011-07-20 | 2015-03-25 | 中弥浩明 | Thermoelectric conversion element and thermoelectric conversion power generation device |
| JP2017505910A (en) * | 2014-01-30 | 2017-02-23 | ノキア テクノロジーズ オサケユイチア | Temperature sensing apparatus and related methods |
| KR20170126304A (en) * | 2016-05-09 | 2017-11-17 | 고려대학교 세종산학협력단 | Flexible temperature sensor device and method for fabricating flexible temperature sensor device |
| CN108318148A (en) * | 2018-02-05 | 2018-07-24 | 北京大学深圳研究生院 | Organic transistor temperature sensor based on graphite base and preparation method thereof |
| CN110488122A (en) * | 2019-08-23 | 2019-11-22 | 金华伏安光电科技有限公司 | Electromagnetic wave detection apparatus and system |
| CN110514319A (en) * | 2018-05-21 | 2019-11-29 | 海成帝爱斯株式会社 | Temperature sensor and the method for manufacturing sensor unit and temperature sensor |
| CN110514307A (en) * | 2019-08-30 | 2019-11-29 | 金华伏安光电科技有限公司 | Infrared detector and system based on two-dimensional material photo-thermal electrical effect |
| CN112629674A (en) * | 2020-12-17 | 2021-04-09 | 华东师范大学 | Graphene oxide assisted infrared thermopile detector |
-
2021
- 2021-04-30 CN CN202110487938.0A patent/CN113203493B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465977A (en) * | 2011-07-20 | 2015-03-25 | 中弥浩明 | Thermoelectric conversion element and thermoelectric conversion power generation device |
| JP2017505910A (en) * | 2014-01-30 | 2017-02-23 | ノキア テクノロジーズ オサケユイチア | Temperature sensing apparatus and related methods |
| KR20170126304A (en) * | 2016-05-09 | 2017-11-17 | 고려대학교 세종산학협력단 | Flexible temperature sensor device and method for fabricating flexible temperature sensor device |
| CN108318148A (en) * | 2018-02-05 | 2018-07-24 | 北京大学深圳研究生院 | Organic transistor temperature sensor based on graphite base and preparation method thereof |
| CN110514319A (en) * | 2018-05-21 | 2019-11-29 | 海成帝爱斯株式会社 | Temperature sensor and the method for manufacturing sensor unit and temperature sensor |
| CN110488122A (en) * | 2019-08-23 | 2019-11-22 | 金华伏安光电科技有限公司 | Electromagnetic wave detection apparatus and system |
| CN110514307A (en) * | 2019-08-30 | 2019-11-29 | 金华伏安光电科技有限公司 | Infrared detector and system based on two-dimensional material photo-thermal electrical effect |
| CN112629674A (en) * | 2020-12-17 | 2021-04-09 | 华东师范大学 | Graphene oxide assisted infrared thermopile detector |
Non-Patent Citations (4)
| Title |
|---|
| Flexible temperature and flow sensor from laser-induced graphene;Marengo等;《2017 IEEE SENSORS》;20180208;全文 * |
| Low-power organic electronics based on gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures;Htay Hlaing等;《72nd Device Research Conference》;20140807;全文 * |
| 基于石墨烯的光纤功能化传感器件和激光器件;谭腾 等;《激光与光电子学进展》;20190930;第56卷(第17期);全文 * |
| 热电探测器;仁初;《激光与红外》;19751130(第11期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113203493A (en) | 2021-08-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6490063B2 (en) | Bioreactor system including temperature detection means | |
| CN102279204A (en) | Detection method for thermal conductivity and thermal diffusivity of anisotropic material | |
| US5044764A (en) | Method and apparatus for fluid state determination | |
| Hsiao et al. | Printed micro-sensors for simultaneous temperature and humidity detection | |
| CN113203493B (en) | Temperature detecting device | |
| CN111238672A (en) | Superconducting tape dynamic temperature measurement method based on magnetic microscopy | |
| CN102401699B (en) | Temperature sensor | |
| CN113175948A (en) | Flexible integrated sensor and method for simultaneously measuring temperature, pressure and medium | |
| CN201497592U (en) | Temperature tactile sensing device | |
| CN106918398B (en) | A kind of computer CPU temperature thermocouple structure | |
| JP6932782B2 (en) | Temperature sensor | |
| JP4844252B2 (en) | Thermal mass flow meter | |
| CN110687358B (en) | Capacitive electromagnetic wave detector and system based on thermoelectric material | |
| Bang et al. | Deep Neural Network Regression‐Assisted Pressure Sensor for Decoupling Thermal Variations at Different Operating Temperatures | |
| RU120139U1 (en) | A WELL SENSOR CONTAINING A PRESSURE NANOSENSOR, A TEMPERATURE NANOSENSOR, A CHEMICAL NANOSENSOR | |
| CN114397035A (en) | Low-power consumption temperature detector | |
| CN108155179B (en) | Semiconductor device with gas detection function | |
| CN112179517A (en) | Temperature sensor and temperature detection method | |
| CN216670175U (en) | Polysilicon electromigration test structure | |
| CN206399552U (en) | A kind of temperature sensor | |
| CN214667343U (en) | Graphene high-temperature transient heat flux density sensor with bridge structure | |
| CN105509914B (en) | Insulating and electromagnetic field resistant thermocouple | |
| CN110440947B (en) | Temperature sensor based on composite structure of field semimetal and semiconductor | |
| CN209166667U (en) | A kind of two stratification temperature sensor of film thermocouple | |
| KR20140080623A (en) | Apparatus and method for measuring level of liquid gas using superconductor and metal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |