CN112629298A - Method for preparing vapor chamber and vapor chamber - Google Patents
Method for preparing vapor chamber and vapor chamber Download PDFInfo
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- CN112629298A CN112629298A CN202011394414.9A CN202011394414A CN112629298A CN 112629298 A CN112629298 A CN 112629298A CN 202011394414 A CN202011394414 A CN 202011394414A CN 112629298 A CN112629298 A CN 112629298A
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- etching
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
- F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
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Abstract
The invention discloses a method for preparing a vapor chamber and the vapor chamber, and relates to the technical field of electronic chip heat dissipation. The method comprises the following steps: carrying out liquid phase etching on one surface of the lower cover along a preset first direction according to a preset first interval, and carrying out liquid phase etching along a second direction according to a preset second interval to obtain a plurality of etching grooves; processing the surface of each etching groove to form a plurality of nano-scale particles and hole structures on the surface of each etching groove; aligning the upper cover with an edge of one face of the lower cover and sealing the edge by welding; wherein, the upper cover and the lower cover form a soaking plate with an opening arranged on only one side, and the opening is communicated with each etching groove; injecting a heat dissipation working medium into the etching tank from the opening, and performing secondary sealing treatment; thereby reducing the processing cycle of the soaking plate.
Description
Technical Field
The invention relates to the technical field of electronic chip heat dissipation, in particular to a method for preparing a vapor chamber and the vapor chamber.
Background
With the continuous maturity of 5G technology, 5G mobile phones gradually become the mainstream of the market. The demand of the ultrathin soaking plate for heat dissipation of the mobile phone is gradually increased. In the traditional process, metal mesh, metal powder and the like are used as raw materials of an internal liquid absorption core and are sintered in a cavity between an upper cover and a lower cover of a soaking plate through a sintering process, however, the soaking plate manufactured in the mode has a long manufacturing period.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, a method for preparing a soaking plate and the soaking plate are provided, which can reduce the manufacturing period of the soaking plate.
According to the embodiment of the invention, the method for preparing the soaking plate comprises an upper cover and a lower cover, and comprises the following steps:
carrying out liquid phase etching on one surface of the lower cover along a preset first direction according to a preset first interval, and carrying out liquid phase etching along a second direction according to a preset second interval to obtain a plurality of etching grooves;
processing the surface of each etching groove to form a plurality of nano-scale particles and/or hole structures on the surface of each etching groove;
aligning the upper cover with an edge of one face of the lower cover and sealing the edge by welding; wherein, the upper cover and the lower cover form a soaking plate with an opening arranged on only one side, and the opening is communicated with each etching groove;
and injecting a heat dissipation working medium into the etching tank from the opening, and performing secondary sealing treatment.
According to the above embodiments of the present invention, at least the following beneficial effects are achieved: a plurality of etching grooves are formed by a liquid phase etching mode, and a plurality of nano-scale particles and/or hole structures are arranged on the groove surfaces of the etching grooves, so that the lower cover forms a capillary imbibition structure, and the groove surface of each etching groove is in a super-hydrophilic state. And a plurality of nano-scale particles and/or hole structures are directly arranged on the groove surface of the etching groove, so that the raw material of the liquid absorption core does not need to be sintered into the lower cover, the time generated by sintering is saved, and the manufacturing period of the soaking plate is shortened.
According to some embodiments of the present invention, an angle between the etch bath in the first direction and the second direction is 20 ° to 90 °. The etching grooves in the staggered directions are arranged, so that the flowing speed of liquid in the soaking plate can be increased, and the heat dissipation efficiency is improved.
According to some embodiments of the present invention, the first interval and the second interval have a value ranging from 30 μm to 200 μm, the depth of each of the etch grooves is set to range from 30 μm to 400 μm, the width of each of the etch grooves is set to range from 30 μm to 400 μm, and the depth of the etch groove has a value greater than the width of the etch groove.
According to some embodiments of the invention, the first interval, the second interval, the depth and the width are converted from a heat source power consumption and a heat source area. Through carrying out the correlation conversion with first interval, second interval, degree of depth and width and heat source consumption and heat source area for the soaking board that makes satisfies the heat dissipation demand, thereby promotes the yields of soaking board production.
According to some embodiments of the invention, the injecting the heat dissipation working medium into the etching bath from the opening and performing the secondary sealing treatment comprises the following steps:
installing a liquid injection pipe into the soaking plate from the opening;
injecting the heat dissipation working medium into the etching bath through the liquid injection pipe;
and carrying out vacuum treatment on the soaking plate, and carrying out secondary sealing treatment on the opening.
Therefore, the heat dissipation efficiency of the soaking plate can be improved by performing the vacuum treatment on the soaking plate.
According to some embodiments of the present invention, the injecting the heat dissipation working medium into the etching chamber from the opening and performing the secondary sealing treatment further includes: and heating and degassing the soaking plate subjected to the secondary sealing treatment. The vacuum degree of the soaking plate is higher through heating degassing treatment.
According to some embodiments of the invention, the method further comprises the steps of: and carrying out sealing side leakage treatment on the soaking plate. Through adding leakproofness edge leakage before carrying out vacuum treatment and handling, can detect the soaking plate in advance, promote the production efficiency of soaking plate.
According to some embodiments of the invention, the method further comprises the steps of:
and carrying out etching process or stamping process processing on one surface of the upper cover opposite to the etching groove so as to form a third groove on the upper cover, wherein a plurality of supporting columns are arranged in the third groove. The space of the closed cavity between the upper cover and the lower cover can be increased by arranging the third groove, and meanwhile, the supporting force is provided for the upper cover through the supporting column so as to protect the upper cover.
According to some embodiments of the invention, the nano-scale particle and/or pore structure is obtained by a laser pulse ablation process. Richer nano-scale particles and/or hole structures can be obtained through laser pulse ablation, and the hydrophilicity of the etching tank is improved.
According to the soaking plate provided by the embodiment of the invention, the soaking plate is obtained by any one of the above methods for preparing the soaking plate.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a diagram showing the main steps of a method for manufacturing a vapor chamber according to an embodiment of the present invention;
fig. 2 is a diagram of the secondary sealing step of the method of manufacturing the soaking plate according to the embodiment of the present invention;
FIG. 3 is an exploded view of a vapor chamber according to an embodiment of the present invention;
fig. 4 is a structural view of an upper cover of the soaking plate according to the embodiment of the present invention.
Reference numerals:
an upper cover 100, a first groove 110, a third groove 120, a supporting column 130,
A lower cover 200, a second groove 210, an etching bath 220,
A pour spout 300.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it should be understood that the orientation or positional relationship referred to in the description of the orientation, such as the upper, lower, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplification of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. If several are described, several means one or more than one; where first and second are described for the purpose of distinguishing between technical features and are not to be construed as indicating or implying relative importance or implicit indication of a number of technical features or implicit indication of a sequence of technical features indicated, reference to a range of values is inclusive of the endpoints of the range.
In the description of the present invention, unless otherwise explicitly limited, terms such as arrangement, installation, connection and the like should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific contents of the technical solutions.
The method for manufacturing the soaking plate and the soaking plate of the present invention will be described below with reference to fig. 1 to 4.
The soaking plate comprises an upper cover 100 and a lower cover 200, as shown in fig. 1, and the method for preparing the soaking plate comprises the following steps:
step S100, performing liquid phase etching on one surface of the lower cover 200 along a preset first direction at preset first intervals, and performing liquid phase etching along a second direction at preset second intervals to obtain a plurality of etching grooves 220.
It should be noted that the first interval may or may not coincide with the second interval. The etch grooves 220 located in the first direction are parallel to each other, and the etch grooves 220 located in the second direction are parallel to each other.
Step S200, processing the surface of each etch bath 220 to form a plurality of nano-scale particles and/or holes on the surface of each etch bath 220.
It should be noted that the first concave groove 110 and the second concave groove 210 can be respectively arranged on one side of the upper cover 100 and one side of the lower cover 200, so that after welding and sealing, the edges of the first concave groove 110 and the second concave groove 210 are aligned to form the pouring pipe 300. At this time, the end of the injection tube 300 away from the etching chamber 220 is not closed (i.e., opened).
The welding includes at least one of high-temperature brazing, laser welding, diffusion welding, ultrasonic welding, and resistance welding.
It should be noted that the upper cover 100 and the lower cover 200 are made of one of pure copper, copper alloy, stainless steel, carbon steel, pure titanium, titanium alloy, pure aluminum, and aluminum alloy.
Step S400, injecting the heat dissipation working medium into the etching tank 220 from the opening, and performing secondary sealing treatment.
It should be noted that the nano-scale particles and the holes can make the groove surface of the etching groove 220 have strong hydrophilicity, so that the heat dissipation working medium (liquid) in the etching groove 220 can dissipate heat only when the temperature of the soaking plate is increased.
Therefore, the etching grooves 220 are formed by liquid phase etching, and the groove surfaces of the etching grooves 220 are provided with a plurality of nano-scale particles and/or hole structures, so that the lower cover 200 forms a capillary liquid absorption structure, and the groove surface of each etching groove 220 is in a super-hydrophilic state. The groove surface of the etching groove 220 is directly provided with a plurality of nano-scale particles and/or hole structures, so that the raw material of the liquid absorbing core does not need to be sintered into the lower cover 200, the time generated by sintering is saved, and the manufacturing period of the soaking plate is shortened.
It can be understood that the angle between the etch grooves 220 in the first and second directions is 20 ° to 90 °. The etching grooves 220 in the staggered directions are arranged, so that the flowing speed of the liquid in the soaking plate can be increased, and the heat dissipation efficiency is improved.
It is understood that the values of the first interval and the second interval are in the range of 30 μm to 200 μm, the depth of each etch bath 220 is set in the range of 30 μm to 400 μm, the width of each etch bath 220 is set in the range of 30 μm to 400 μm, and the depth of the etch bath 220 has a value greater than that of the width of the etch bath 220.
It is understood that the first interval, the second interval, the depth and the width are converted by the heat source power consumption and the heat source area. Through carrying out the correlation conversion with first interval, second interval, degree of depth and width and heat source consumption and heat source area for the soaking board that makes satisfies the heat dissipation demand, thereby promotes the yields of soaking board production.
It should be noted that the heat source power consumption and the heat source area of the soaking plate affect the heat dissipation efficiency of the soaking plate, and therefore the heat dissipation requirement of the soaking plate can be met by obtaining the first interval, the second interval, the depth and the width through the heat source power consumption and the heat source area conversion. The relationship between the heat source power consumption and the heat source area is as follows:
Pt≤ρAdh
wherein, P is heat power consumption of a heat source; rho is the density of the working medium; t is the time when the heat dissipation working medium climbs along the channel and is paved in the heat source area under the antigravity condition; a is the area of the channel perpendicular to the depth in the heat source region (i.e., the area of the notch of all the etch trenches 220, which is related to the width of the etch trenches 220 and the first and second spacings, which affect the number of etch trenches 220); d is the groove depth; h is the latent heat of vaporization of the heat dissipation working medium.
Therefore, the relationship among the first interval, the second interval, the width and the depth can be obtained through the relationship, and then the specific model selection parameters of the soaking plate are determined one by one according to the setting range of each parameter (namely, the first interval, the second interval, the width and the depth) of the etching bath 220.
It is understood that, as shown in fig. 2, the step S400 includes the steps of:
step S410, the injection pipe 300 is installed into the soaking plate from the opening.
Step S420, injecting the heat dissipation working medium into the etching bath 220 through the liquid injection pipe 300.
It should be noted that the heat dissipation working medium may be water or other liquid capable of absorbing heat.
And step S430, performing vacuum treatment on the soaking plate, and performing secondary sealing treatment on the opening.
Under the vacuum environment, no air exists between the upper cover 100 and the lower cover 200, and all heat is conducted to the heat dissipation working medium for heat dissipation.
Therefore, the heat dissipation efficiency of the soaking plate can be improved by performing the vacuum treatment on the soaking plate.
It is understood that step S440 is further included after step S430, and the soaking plate after the secondary sealing treatment is subjected to heating degassing treatment. The vacuum degree of the soaking plate is higher through heating degassing treatment.
It is understood that the following steps are further included between step S300 and step S400: and carrying out sealing side leakage treatment on the soaking plate. Through adding leakproofness edge leakage before carrying out vacuum treatment and handling, can detect the soaking plate in advance, promote the production efficiency of soaking plate.
It is understood that, before step S300, the method for preparing the soaking plate further comprises the following steps:
the side of the upper cover 100 opposite to the etching groove 220 is processed by an etching process or a punching process, so that a third groove 120 is formed in the upper cover 100, and a plurality of support pillars 130 are disposed in the third groove 120.
It should be noted that the depth of the third groove 120 and the height of the supporting column 130 are set to 0.08-0.3 mm.
It should be noted that, since the upper cover 100 is provided with the third groove 120, a portion of the upper cover 100 in the third groove 120 is thinned and easily damaged, and the supporting columns 130 can provide supporting force at various positions of the third groove 120 to improve the strength of the upper cover 100.
Therefore, the space of the sealed cavity between the upper cover 100 and the lower cover 200 can be increased by providing the third groove 120, and at the same time, the supporting force is provided to the upper cover 100 by the supporting column 130 to protect the upper cover 100.
It is understood that the nanoscale particles and/or pore structures are obtained by a laser pulse ablation process. Richer nano-scale particles and/or hole structures can be obtained through laser pulse ablation, and the hydrophilicity of the etching tank 220 is improved.
It should be noted that the metal substrate on the groove surface of the etching groove 220 is melted and vaporized by the laser high-temperature ablation, and the melted liquid metal is solidified under the action of surface tension in the subsequent cooling process, and forms abundant nano-scale structures (i.e., nano-scale particles and/or hole structures).
It is understood that the soaking plate shown in fig. 3 and 4 is obtained by any of the above-described methods of preparing the soaking plate.
The soaking plate manufactured by the soaking plate manufacturing method of the present invention is described in detail in one specific example with reference to fig. 1 to 4. It is to be understood that the following description is only exemplary, and not a specific limitation of the invention.
The soaking plate shown in fig. 3 is obtained through step S100, step S200, step S300, and step S400. The soaking plate includes an upper cover 100 and a lower cover 200.
One side of the upper cover 100 is provided with a first groove 110; a second groove 210 is formed in one side of the lower cover 200, and a notch of the first groove 110 is opposite to a notch of the second groove 210; the edges of the first groove 110 and the second groove 210 are aligned to form a liquid injection pipe 300, one surface of the lower cover 200 opposite to the upper cover 100 is formed with a plurality of etching grooves 220 in a first direction and a second direction through liquid phase etching, and the liquid injection pipe 300 is communicated with the etching grooves 220; the groove surface of the etching groove 220 is provided with a plurality of nano-scale particles and/or hole structures; the etch baths 220 located in the same direction are parallel to each other; the edges of the upper and lower covers 100 and 200 are aligned and sealed by welding.
Specifically, the included angle between two adjacent etching trenches 220 in the same first direction and the same second direction is 90 °.
Further, the nano-scale particles and/or pore structures are obtained by laser pulse ablation.
Further, the welding is laser welding.
Further, before the step S300, the upper cover 100 is operated to obtain the upper cover 100 as shown in fig. 4, wherein a third groove 120 is disposed on a surface of the upper cover 100 opposite to the etching bath 220, a plurality of support pillars 130 are disposed in the third groove 120, and the support pillars 130 abut against the etching bath 220 to form a sealed cavity between the upper cover 100 and the lower cover 200.
Specifically, the third groove 120 and the supporting pillar 130 are formed by etching.
Specifically, the depth of the third groove 120 and the height of the supporting column 130 are set to 0.08 mm.
Specifically, the upper cover 100 and the lower cover 200 are made of stainless steel.
Further, in step S300 and step S400, the vapor chamber is subjected to a sealing side leakage process.
Further, as shown in fig. 2, through steps S410 to S440, the liquid injection pipe 300 is assembled into the vapor chamber, a heat radiation working medium is injected, and secondary sealing and heating degassing treatment are performed to obtain a processed vapor chamber.
In the description herein, references to the description of the terms "one embodiment," "some embodiments," "an exemplary embodiment," "may be understood as," "requiring an understanding of," or the like, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the gist of the present invention.
Claims (10)
1. The method for preparing the soaking plate is characterized in that the soaking plate comprises an upper cover and a lower cover, and comprises the following steps:
carrying out liquid phase etching on one surface of the lower cover along a preset first direction according to a preset first interval, and carrying out liquid phase etching along a second direction according to a preset second interval to obtain a plurality of etching grooves;
processing the surface of each etching groove to form a plurality of nano-scale particles and/or hole structures on the surface of each etching groove;
aligning the upper cover with an edge of one face of the lower cover and sealing the edge by welding; wherein, the upper cover and the lower cover form a soaking plate with an opening arranged on only one side, and the opening is communicated with each etching groove;
and injecting a heat dissipation working medium into the etching tank from the opening, and performing secondary sealing treatment.
2. The method for producing a vapor chamber according to claim 1,
the angle between the etch bath in the first direction and the second direction ranges from 20 ° to 90 °.
3. The method for producing a vapor chamber according to claim 1,
the numerical range of the first interval and the second interval is 30 μm to 200 μm, the depth of each of the etch grooves is set to 30 μm to 400 μm, the width of each of the etch grooves is set to 30 μm to 400 μm, and the depth of the etch groove has a value greater than the width of the etch groove.
4. The method for producing a vapor chamber according to claim 3,
the first interval, the second interval, the depth, and the width are obtained by heat source power consumption and heat source area conversion.
5. The method for producing a vapor chamber according to claim 1,
the method comprises the following steps of injecting a heat dissipation working medium into the etching groove from the opening, and carrying out secondary sealing treatment, wherein the heat dissipation working medium comprises the following components:
installing a liquid injection pipe into the soaking plate from the opening;
injecting the heat dissipation working medium into the etching bath through the liquid injection pipe;
and carrying out vacuum treatment on the soaking plate, and carrying out secondary sealing treatment on the opening.
6. The method for producing a vapor chamber according to claim 5,
the method comprises the following steps of injecting a heat dissipation working medium into the etching groove from the opening, and carrying out secondary sealing treatment, and further comprises the following steps:
and heating and degassing the soaking plate subjected to the secondary sealing treatment.
7. The method for producing a soaking plate according to any one of claims 1 to 6, further comprising the steps of:
and carrying out sealing side leakage treatment on the soaking plate.
8. The method for producing a soaking plate according to any one of claims 1 to 6, further comprising the steps of:
and carrying out etching process or stamping process processing on one surface of the upper cover opposite to the etching groove so as to form a third groove on the upper cover, wherein a plurality of supporting columns are arranged in the third groove.
9. The method for producing a vapor chamber according to any one of claims 1 to 6,
the nano-scale particles and/or the hole structures are obtained through laser pulse ablation treatment.
10. A soaking plate is characterized in that the soaking plate is provided with a plurality of soaking holes,
the vapor chamber is made by the method of any one of claims 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011394414.9A CN112629298A (en) | 2020-12-02 | 2020-12-02 | Method for preparing vapor chamber and vapor chamber |
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| CN202011394414.9A CN112629298A (en) | 2020-12-02 | 2020-12-02 | Method for preparing vapor chamber and vapor chamber |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113115576A (en) * | 2021-04-20 | 2021-07-13 | 苏州康丽达精密电子有限公司 | Ultrathin soaking plate and manufacturing method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050145379A1 (en) * | 2003-12-17 | 2005-07-07 | Andy Thomas | Flat tube cold plate assembly |
| CN105716467A (en) * | 2016-02-25 | 2016-06-29 | 浙江大学 | Intelligent boiling surface and boiling control method thereof |
| WO2018089432A1 (en) * | 2016-11-08 | 2018-05-17 | Kelvin Thermal Technologies, Inc. | Method and device for spreading high heat fluxes in thermal ground planes |
| US20200003500A1 (en) * | 2015-01-22 | 2020-01-02 | Pimems, Inc. | High performance two-phase cooling apparatus |
| CN111194157A (en) * | 2020-01-19 | 2020-05-22 | 河北水利电力学院 | Micro-channel boiling-direct contact condensing type cold plate |
| KR20200056916A (en) * | 2018-11-15 | 2020-05-25 | 주식회사 씨지아이 | Non-oriented vapor chamber |
| CN211782950U (en) * | 2020-03-11 | 2020-10-27 | 东莞市共翔五金电子有限公司 | VC soaking plate capillary is applicable to heat dissipation module structure |
-
2020
- 2020-12-02 CN CN202011394414.9A patent/CN112629298A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050145379A1 (en) * | 2003-12-17 | 2005-07-07 | Andy Thomas | Flat tube cold plate assembly |
| US20200003500A1 (en) * | 2015-01-22 | 2020-01-02 | Pimems, Inc. | High performance two-phase cooling apparatus |
| CN105716467A (en) * | 2016-02-25 | 2016-06-29 | 浙江大学 | Intelligent boiling surface and boiling control method thereof |
| WO2018089432A1 (en) * | 2016-11-08 | 2018-05-17 | Kelvin Thermal Technologies, Inc. | Method and device for spreading high heat fluxes in thermal ground planes |
| KR20200056916A (en) * | 2018-11-15 | 2020-05-25 | 주식회사 씨지아이 | Non-oriented vapor chamber |
| CN111194157A (en) * | 2020-01-19 | 2020-05-22 | 河北水利电力学院 | Micro-channel boiling-direct contact condensing type cold plate |
| CN211782950U (en) * | 2020-03-11 | 2020-10-27 | 东莞市共翔五金电子有限公司 | VC soaking plate capillary is applicable to heat dissipation module structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113115576A (en) * | 2021-04-20 | 2021-07-13 | 苏州康丽达精密电子有限公司 | Ultrathin soaking plate and manufacturing method thereof |
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