CN112563106B - 一种半导体处理设备及其排气系统 - Google Patents

一种半导体处理设备及其排气系统 Download PDF

Info

Publication number
CN112563106B
CN112563106B CN201910852668.1A CN201910852668A CN112563106B CN 112563106 B CN112563106 B CN 112563106B CN 201910852668 A CN201910852668 A CN 201910852668A CN 112563106 B CN112563106 B CN 112563106B
Authority
CN
China
Prior art keywords
vacuum reaction
semiconductor processing
exhaust system
reaction cavity
turbine blade
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910852668.1A
Other languages
English (en)
Other versions
CN112563106A (zh
Inventor
蔡楚洋
左涛涛
吴狄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Fabrication Equipment Inc Shanghai
Original Assignee
Advanced Micro Fabrication Equipment Inc Shanghai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Fabrication Equipment Inc Shanghai filed Critical Advanced Micro Fabrication Equipment Inc Shanghai
Priority to CN201910852668.1A priority Critical patent/CN112563106B/zh
Priority to TW109127269A priority patent/TWI737443B/zh
Publication of CN112563106A publication Critical patent/CN112563106A/zh
Application granted granted Critical
Publication of CN112563106B publication Critical patent/CN112563106B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H01J37/32844—Treating effluent gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

一种半导体处理设备及其排气系统，通过在排气系统的调节阀上方增设涡轮叶片来阻挡并抵消倒灌气流，从而有效地抑制由涡轮泵倒灌的颗粒物进入半导体处理设备中的真空反应腔，防止真空反应腔受到污染，同时防止排气速度降低，延长了半导体处理设备的使用寿命。

Description

一种半导体处理设备及其排气系统
技术领域
本发明涉及一种半导体处理设备及其排气系统。
背景技术
采用半导体处理设备来对半导体器件执行各种不同类型的处理，包括蚀刻，化学气相沉积，灰化等。如图1所示，在半导体处理设备中，通常包含真空反应腔1’，该真空反应腔1’中设置有基座2’，静电吸盘3’设置在基座2’上，晶圆4’放置在静电吸盘3’上，真空反应腔1’中还设置有进气装置5’，进气装置5’连接外部的气源6’，提供反应气体进入真空反应腔1’，以实现对晶圆4’的处理，同时真空反应腔1’中还设置有排气系统，该排气系统包含调节阀7’和涡轮泵8’，调节阀7’设置在排气口9’处，用于控制真空反应腔1’中的气体压力，排气系统在半导体制程过程中或结束后将真空反应腔1’内部的气体以及反应生成物和副产物等颗粒物抽走，使真空反应腔1’内处于真空负压状态。
当调节阀7’在调节开口大小的时候会搅动气流，排气口9’处的气压突然变化，造成此时部分颗粒物不能被涡轮泵8’有效地抽走，有倒灌的隐患，进而影响制程效果。另外在某些特殊情况下，例如涡轮泵8’的泵体出现故障时，若此时的调节阀7’尚未关闭，而涡轮泵8’内马达的转速已经开始下降，将导致调节阀7’下游的压力上升，当下游压力大于真空反应腔1’的腔体内部压力时，在真空反应腔1’和涡轮泵8’之间积聚的大量颗粒物将迅速返流倒灌回真空反应腔1’，导致真空反应腔1’腔体内严重污染，甚至会将进气装置5’的喷淋头的喷气孔堵塞。清洗受污染的真空反应腔1’，并更换进气装置5’等部件至少耗时两周，这样造成长时间的生产停滞，产生巨额经济损失。
发明内容
本发明提供一种半导体处理设备及其排气系统，有效地抑制由涡轮泵倒灌的颗粒物进入半导体处理设备中的真空反应腔，防止真空反应腔受到污染，同时防止排气速度降低，延长了半导体处理设备的使用寿命。
为了达到上述目的，本发明提供一种用于半导体处理设备的排气系统，所述的排气系统连接半导体处理设备中的真空反应腔的排气口，所述的排气系统包含：调节阀，涡轮泵，以及涡轮叶片；
所述的调节阀设置在真空反应腔的排气口处，用于调节真空反应腔中的气体压力；
所述的涡轮泵设置在调节阀下方，将真空反应腔中的反应气体和生成的颗粒物抽走；
所述的涡轮叶片设置在真空反应腔的排气口处，位于调节阀上方，用于防止颗粒物倒灌。
所述的涡轮叶片包含旋转轴和连接旋转轴的至少三个旋转叶片，所述的旋转叶片可绕所述的旋转轴进行自由旋转。
所述的涡轮叶片的旋转叶片的倾斜方向与所述的涡轮泵的旋转叶片的倾斜方向相同。
所述的涡轮叶片的直径与真空反应腔的排气口的直径相匹配。
所述的涡轮叶片通过连接装置固定设置在真空反应腔的排气口处。
所述的连接装置是环形圈，所述的环形圈固定在排气口处的腔壁上，涡轮叶片的旋转轴连接所述的环形圈。
所述的连接装置是连接杆，所述的连接杆固定在排气口处的腔壁上，或者固定在真空反应腔的侧壁上，涡轮叶片的旋转轴连接所述的连接杆。
本发明还提供一种半导体处理设备，所述的半导体处理设备包含真空反应腔，真空反应腔中设置有基座，静电吸盘设置在基座上，晶圆放置在静电吸盘上，真空反应腔中还设置有进气装置，进气装置连接外部的气源，提供反应气体进入真空反应腔，以实现对晶圆的处理，真空反应腔中还设置有所述的排气系统，用于在半导体制程结束后将真空反应腔内部的反应气体和生成的颗粒物抽走，使真空反应腔内处于真空负压状态。
本发明通过在排气系统的调节阀上方增设涡轮叶片来阻挡并抵消倒灌气流，从而有效地抑制由涡轮泵倒灌的颗粒物进入半导体处理设备中的真空反应腔，防止真空反应腔受到污染，同时防止排气速度降低，延长了半导体处理设备的使用寿命。
附图说明
图1是背景技术中半导体处理设备的结构示意图。
图2是本发明提供的一种半导体处理设备的结构示意图。
图3和图4是半导体处理设备中排气系统的放大示意图。
图5是涡轮叶片的示意图。
具体实施方式
以下根据图2～图5，具体说明本发明的较佳实施例。
如图2所示，本发明提供一种半导体处理设备，该半导体处理设备包含一个真空反应腔1，真空反应腔1中设置有基座2，静电吸盘3设置在基座2上，晶圆4放置在静电吸盘3上，真空反应腔1中还设置有进气装置5，进气装置5连接外部的气源6，提供反应气体进入真空反应腔1，以实现对晶圆4的处理，同时真空反应腔1中还设置有排气系统，用于在半导体制程结束后将真空反应腔1内部的气体以及反应生成物和副产物等灰尘颗粒物抽走，使真空反应腔1内处于真空负压状态。
所述的真空反应腔1可以是化学气相沉积反应腔，对晶圆4进行化学气相沉积制程。此时的真空反应腔1内还设置有晶圆加热装置(图中未显示)，用于加热晶圆4。反应气体从进气装置5进入真空反应腔1，从晶圆4表面流过，并沉积到晶圆4表面，制程过程中或结束后，排气系统将反应生成物和副产物等颗粒物抽走，恢复真空反应腔1的真空状态。
所述的真空反应腔1还可以是等离子体刻蚀反应腔，对晶圆4进行刻蚀制程。
如果真空反应腔1是电容耦合等离子刻蚀反应腔，则真空反应腔1的顶壁可以作为上电极，静电吸盘3作为下电极，通常设置一射频功率源施加到所述下电极，用来将上下电极间的反应气体激发为等离子体。反应气体从进气装置5进入真空反应腔1，被激发为等离子体，等离子体对晶圆4进行刻蚀处理，制程结束后，排气系统将反应生成物和副产物等颗粒物抽走，恢复真空反应腔1的真空状态。
如果真空反应腔1是电感耦合等离子刻蚀反应腔，则真空反应腔1的顶部设置有电感耦合线圈(图中未显示)，射频功率源向电感耦合线圈提供射频能量，使得电感耦合线圈产生磁场，反应气体从进气装置5进入真空反应腔1，反应气体被磁场电离为等离子体，等离子体对晶圆4进行刻蚀处理，制程结束后，排气系统将反应生成物和副产物等颗粒物抽走，恢复真空反应腔1的真空状态。
所述的真空反应腔1还可以是光刻胶去除反应腔，对晶圆4进行灰化处理。此时的真空反应腔1上还设置一氧原子发生器(图中未显示)，等离子体从进气装置5进入真空反应腔1，氧原子发生器利用等离子体将含氧的反应气体解离为氧原子，使用氧原子去除晶圆4上的光刻胶，光刻胶被氧化成气体，然后通过排气系统被排出真空反应腔1。
如图2所示，所述的排气系统包含调节阀7和涡轮泵8，调节阀7设置在真空反应腔1的排气口9处，用于调节真空反应腔1中的气体压力，涡轮泵8设置在调节阀7下方，将反应生成物和副产物等颗粒物抽走，恢复真空反应腔1的真空状态。所述的排气系统还包含涡轮叶片10，其设置在真空反应腔1的排气口9处，位于调节阀7上方，用于防止颗粒物倒灌。所述的涡轮叶片10通过连接装置固定设置在真空反应腔1的排气口9处。当涡轮泵8运作时，气流从反应腔1流向腔外，该气流能带动涡轮叶片10自由旋转。如图3所示，所述的连接装置可以是环形圈11，该环形圈11固定在排气口9处的腔壁上，涡轮叶片10的旋转轴连接该环形圈11，涡轮叶片10可自由旋转。或者，如图4所示，所述的连接装置可以是连接杆12，该连接杆12可以固定在排气口9处的腔壁上，或者固定在真空反应腔1的侧壁上，连接杆12可以连接涡轮叶片10的旋转轴，从而不会妨碍涡轮叶片10的自由旋转。
当调节阀7调小开口时，由于调节阀7的上下压差的不同，会出现瞬时的反应生成物和副产物等颗粒物的倒灌。这种倒灌气流从涡轮泵8朝向反应腔1，与涡轮泵8产生的抽走颗粒物的排气气流方向相反。一方面，设置在调节阀7上方的涡轮叶片10自身可以阻挡倒灌气流中的颗粒物。另一方面，由于涡轮叶片10在调节阀7调小之前正在自由旋转，所以其产生的向下气流会抵消倒灌气流，进一步阻碍倒灌气流中的颗粒物进入反应腔1。
进一步，如图5所示，所述的涡轮叶片10的旋转轴10-1与连接装置固定，多个旋转叶片10-2可绕旋转轴10-1进行自由旋转。所述的旋转叶片10-2的数量至少为三个，所述的旋转叶片10-2的倾斜方向与涡轮泵8的旋转叶片的倾斜方向相同。
为了更好地阻挡倒灌的颗粒物，涡轮叶片10的直径应该与真空反应腔1的排气口9的直径相等或者略小于排气口9的直径，以便使涡轮叶片10的旋转更加灵敏。
涡轮叶片10上的旋转叶片10-2的数量，以及旋转叶片10-2的倾斜角度，可以根据涡轮泵8的功率和涡轮叶片10的设置位置(例如，涡轮叶片10与调节阀7的距离)来进行调节。
本发明通过在排气系统的调节阀上方增设涡轮叶片来阻挡并抵消倒灌气流，从而有效地抑制由涡轮泵倒灌的颗粒物进入半导体处理设备中的真空反应腔，防止真空反应腔受到污染，同时防止排气速度降低，延长了半导体处理设备的使用寿命。
尽管本发明的内容已经通过上述优选实施例作了详细介绍，但应当认识到上述的描述不应被认为是对本发明的限制。在本领域技术人员阅读了上述内容后，对于本发明的多种修改和替代都将是显而易见的。因此，本发明的保护范围应由所附的权利要求来限定。

Claims (8)

1.一种用于半导体处理设备的排气系统，所述的排气系统连接半导体处理设备中的真空反应腔的排气口，其特征在于，所述的排气系统包含：调节阀，涡轮泵，以及涡轮叶片；
所述的调节阀设置在真空反应腔的排气口处，用于调节真空反应腔中的气体压力；
所述的涡轮泵设置在调节阀下方，将真空反应腔中的反应气体和生成的颗粒物抽走；
所述的涡轮叶片设置在真空反应腔的排气口处，位于调节阀上方，当所述的涡轮泵运作时，气流从所述的真空反应腔流向腔外，所述气流带动所述的涡轮叶片自由旋转，用于防止颗粒物倒灌。
2.如权利要求1所述的用于半导体处理设备的排气系统，其特征在于，所述的涡轮叶片包含旋转轴和连接旋转轴的至少三个旋转叶片，所述的旋转叶片可绕所述的旋转轴进行自由旋转。
3.如权利要求2所述的用于半导体处理设备的排气系统，其特征在于，所述的涡轮叶片的旋转叶片的倾斜方向与所述的涡轮泵的旋转叶片的倾斜方向相同。
4.如权利要求1所述的用于半导体处理设备的排气系统，其特征在于，所述的涡轮叶片的直径与真空反应腔的排气口的直径相匹配。
5.如权利要求2所述的用于半导体处理设备的排气系统，其特征在于，所述的涡轮叶片通过连接装置固定设置在真空反应腔的排气口处。
6.如权利要求5所述的用于半导体处理设备的排气系统，其特征在于，所述的连接装置是环形圈，所述的环形圈固定在排气口处的腔壁上，涡轮叶片的旋转轴连接所述的环形圈。
7.如权利要求5所述的用于半导体处理设备的排气系统，其特征在于，所述的连接装置是连接杆，所述的连接杆固定在排气口处的腔壁上，或者固定在真空反应腔的侧壁上，涡轮叶片的旋转轴连接所述的连接杆。
8.一种半导体处理设备，其特征在于，所述的半导体处理设备包含真空反应腔，真空反应腔中设置有基座，静电吸盘设置在基座上，晶圆放置在静电吸盘上，真空反应腔中还设置有进气装置，进气装置连接外部的气源，提供反应气体进入真空反应腔，以实现对晶圆的处理，真空反应腔中还设置有如权利要求1-7中任意一项所述的排气系统，用于在半导体制程结束后将真空反应腔内部的反应气体和生成的颗粒物抽走，使真空反应腔内处于真空负压状态。
CN201910852668.1A 2019-09-10 2019-09-10 一种半导体处理设备及其排气系统 Active CN112563106B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201910852668.1A CN112563106B (zh) 2019-09-10 2019-09-10 一种半导体处理设备及其排气系统
TW109127269A TWI737443B (zh) 2019-09-10 2020-08-12 一種半導體處理設備及其排氣系統

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910852668.1A CN112563106B (zh) 2019-09-10 2019-09-10 一种半导体处理设备及其排气系统

Publications (2)

Publication Number Publication Date
CN112563106A CN112563106A (zh) 2021-03-26
CN112563106B true CN112563106B (zh) 2023-10-31

Family

ID=75028747

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910852668.1A Active CN112563106B (zh) 2019-09-10 2019-09-10 一种半导体处理设备及其排气系统

Country Status (2)

Country Link
CN (1) CN112563106B (zh)
TW (1) TWI737443B (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW466305B (en) * 1999-05-28 2001-12-01 Seiko Seiki Kk Vacuum pump
CN1529794A (zh) * 2000-12-18 2004-09-15 Ӧ�ò��Ϲ�˾ 具有增强的抽气能力的涡轮分子泵
CN1898411A (zh) * 2003-12-23 2007-01-17 约翰·C·舒马赫 用于半导体反应器的排气调节系统
JP2007046461A (ja) * 2005-08-05 2007-02-22 Shimadzu Corp ターボ分子ポンプ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7927066B2 (en) * 2005-03-02 2011-04-19 Tokyo Electron Limited Reflecting device, communicating pipe, exhausting pump, exhaust system, method for cleaning the system, storage medium storing program for implementing the method, substrate processing apparatus, and particle capturing component
TW200811945A (en) * 2006-08-16 2008-03-01 Hitachi High Tech Corp Plasma process apparatus
JP5350598B2 (ja) * 2007-03-28 2013-11-27 東京エレクトロン株式会社 排気ポンプ、連通管、排気システム及び基板処理装置
JP5460982B2 (ja) * 2008-07-30 2014-04-02 東京エレクトロン株式会社 弁体、粒子進入阻止機構、排気制御装置及び基板処理装置
JP2010174779A (ja) * 2009-01-30 2010-08-12 Hitachi High-Technologies Corp 真空処理装置
JP6022228B2 (ja) * 2011-09-14 2016-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW466305B (en) * 1999-05-28 2001-12-01 Seiko Seiki Kk Vacuum pump
CN1529794A (zh) * 2000-12-18 2004-09-15 Ӧ�ò��Ϲ�˾ 具有增强的抽气能力的涡轮分子泵
CN1898411A (zh) * 2003-12-23 2007-01-17 约翰·C·舒马赫 用于半导体反应器的排气调节系统
JP2007046461A (ja) * 2005-08-05 2007-02-22 Shimadzu Corp ターボ分子ポンプ

Also Published As

Publication number Publication date
TWI737443B (zh) 2021-08-21
CN112563106A (zh) 2021-03-26
TW202111837A (zh) 2021-03-16

Similar Documents

Publication Publication Date Title
US6485531B1 (en) Process chamber
US9721815B2 (en) Substrate processing apparatus and substrate processing method
JP5996834B2 (ja) 真空排気装置
US20060060303A1 (en) Plasma processing system and method
CN110603628B (zh) 处理污水的去除
JP2010504847A5 (zh)
WO2002055883A2 (en) Turbo-molecular pump
JP4787003B2 (ja) ポンプを冷却する方法及びシステム
CN112563106B (zh) 一种半导体处理设备及其排气系统
CN110622290B (zh) 亚纳米级基板清洁机构
JP2017110627A (ja) 真空ポンプ及び該真空ポンプに搭載される回転翼、反射機構
US7892361B2 (en) In-chamber member, a cleaning method therefor and a plasma processing apparatus
KR20220146445A (ko) 진공 펌프
TW202122149A (zh) 填充塔
KR100864947B1 (ko) 약액과 가스의 분리가 가능한 기판 처리 장치
JP7437254B2 (ja) 真空ポンプ、及び、真空ポンプの洗浄システム
KR20080056192A (ko) 반도체 처리용 펌프 장치
US20220319814A1 (en) Method and apparatus for revitalizing plasma processing tools
CN217768298U (zh) 基板处理装置
WO2023228863A1 (ja) 真空ポンプ及び真空排気システム
JP2009238939A (ja) 基板処理方法および基板処理装置
KR100510076B1 (ko) 플라즈마 에칭 장치
JP2003068693A (ja) 基板処理装置および基板処理方法
JPH11204293A (ja) プラズマ処理装置
EP4108919A1 (en) Vacuum pump, detoxifying device, and exhaust gas processing system

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant