200811945 (1) 九、發明說明 【發明所屬之技術領域】 本發明是有關在真空容器內的處理室中利用電漿來處 理試料之電漿處理裝置，特別是藉由真空泵來調整處理室 內的氣體排出，藉此調整真空容器內部的處理室內的壓力 之電漿處理裝置。 Φ 【先前技術】 在上述那樣的電漿處理裝置中，近年來爲了實現更微 細且高精度的處理，而被要求形成更高密度且更均一的電 漿。而且，在安定形成如此的高密度電漿之後，被要求以 更高的真空度（更低的壓力）來更安定地實現真空容器內的 處理室的壓力。 在如此的電漿處理裝置中，以往配置於真空容器内部 的處理室是與用以排除其内側的氣體或隨著電漿或處理室 Φ 内的處理而生成的生成物等的粒子之真空泵等的排氣裝置 連結。並且，在從處理室内往真空泵的入口連通的排氣通 _ 路上配置有調節每單位時間的排氣量之裝置，藉由此調節 裝置的動作之上述處理室内部的氣體或粒子的排氣量的調 節，來調節配置有處理對象的半導體晶圓等基板狀的試料 或形成有電漿之處理室内部的壓力。 在以往的處理裝置中配置有調節從連通真空容器内的 處理室下部的排氣口與真空泵的入口之通路的該等排氣口 與入口間所排出的氣流的阻抗或流動易度（電導）之手段， -5- (2) (2)200811945 調節從真空容器排出的氣體量，且調節真空容器内部壓力 。就調節如此的流動阻抗或流動易度的手段而言.可考量 使用令通路或入口或排氣口的開口大小或面積變化之1個 或複數個的閥，藉由如此之閥的旋轉或往橫過管路的軸的 方向移動來調節開口的大小或面積。 如此之以往的技術例子，例如有揭示於特開2005-1 〇 1 5 9 8號公報（專利文獻1)者。就此以往的技術而言，是 在配置於處理室内用以載置試料亦即晶圓的試料台的正下 方排出處理室内的氣體之大致圓形的開口與配置於開口的 下方側排除氣體的真空泵之間具備複數個旋轉的板狀的閥 ，可藉由該等的閥的旋轉來改變調節氣體所能夠通過的通 路的面積。 又，就其他以往的技術而言，例如有以和真空容器連 接的真空泵本身來調節來自處理室内的氣體等每單位時間 的排出量。如此的以往技術，可舉揭示於特開 2005-1 40079號公報（專利文獻2)者。該以往的技術是有關具有 與真空容器内的處理室連通的入口之真空泵，特別是有關 可減壓成高度的真空狀態之渦輪分子泵，使來自壓縮部（ 具備在同旋轉軸上相互連接配置複數段的旋轉翼及固定翼 )的出口部之排氣的一部份，從動翼的前端側到壓縮部， 一面調節其量一面返回，藉此來調節實質的處理室内的氣 體等的排氣量。 〔專利文獻1〕 特開2005- 1 01 598號公報 〔專利文獻2〕 特開2005-1 40079號公報 -6- 200811945 (3) 【發明內容】 (發明所欲解決的課題） 但，上述以往的技術，由於針對下述的點考慮不夠充 分，因此產生問題。 亦即，在上述專利文獻1中所揭示的以往技術中，若 欲將處理室内形成更高度的真空狀態，則必須使上述板狀 的閥形成大的開度（或開口面積），但如此的大開度下其壓 φ 力的調節精度會降低。亦即，爲了實現如此的大開度，而 使各閥旋轉，針對上述通路的軸方向，各閥的角度會變小 (閥的面會趨近平行於上述通路的軸）。在此狀態下，處理 室内的壓力會變小，由於對各閥的角度變化之氣體的排出 量的變化會變小，因此會有所謂控制性降低，無法高精度 安定地竇現高真空度的問題點。 另一方面，在專利文獻2中亦揭示有在具備渦輪部的 真空泵中，具備使從渦輪部排出的排氣的一部份回到渦輪 # 部的通路，藉由返回排氣來使實效的排氣量變化之技術， 該渦輪部是利用由旋轉軸周圍放射狀配置的複數個翼所構 _ 成的旋轉翼及固定於外殼的固定翼來一面壓縮排氣一面排 、 出。但，就此專利文獻2而言，存在於壓縮部的氣體内的 附著性強的生成物的粒子等會附著於真空泵，或進入真空 泵内部，例進入處理室内，有關在處理室内形成異物而使 試料的處理良品率或效率降低之問題方面未被考量。 另外，就此以往的技術構成而言，在真空泵的吸氣側 及排氣側，氣體的組成等會變化，若將如此的氣體回到真 (4) (4)200811945 空泵的吸氣（入口）側，則會有使處理室内部的氣體構成變 化的問題產生之虞。 本發明的目的是在於提供一種可安定實現處理室内的 壓力控制之電漿處理裝置。又，提供一種可高精度且良品 率佳地進行試料的處理之電漿處理裝置。' (用以解決課題的手段）. 上述目的是藉由電漿處理裝置來達成，其係利用形成 於處理室内部的電漿來處理試料之電漿處理裝置，其特徵 爲具備： 處理室，其係於内部一面供給處理用氣體一面形成電 漿； 試料台，其係於上面載置有被處理的試料； 真空泵，其係從試料下方排出處理室内的氣體而減壓 之真空泵，具備：壓縮部，其係具有旋轉翼及固定翼，該 旋轉翼及固定翼係具有配置於其外殼内且配置於同軸上的 複數個翼、及排氣口，其係將從該壓縮部排出的上述氣體 予以排出至上述外殼外； 導入口，其係配置於上述壓縮部的最上位置所配置的 旋轉翼與其下方的固定翼之間，導入惰性氣體；及 流量調整器’其係配置於上述惰性氣體的氣體積存部 與上述導入口之間，調整上述惰性氣體的量。 又’藉由電漿處理裝置來達成，其係利用形成於處理 室内部的電漿來處理試料之電漿處理裝置，其特徵係藉由 -8- (5) (5)200811945 處理室，其係於内部一面供給處理用氣體一面形成電 繁， 試料台，其係於上面載置有被處理的試料； 真空泵，其係從試料下方排出處理室内的氣體而減壓 ，具備： 壓縮部，其係配置於處理室下方，由旋轉翼及固定翼 所構成，該旋轉翼及固定翼係於殼内由同軸狀的複數個翼 所構成； 導入口，其係配置於將從壓縮部所排出的上述氣體排 出至外殼外的排氣口與上述旋轉翼下方的固定翼之間的上 述壓縮部外周，導入惰性氣體； 氣體返回口 ’其係配置於上述壓縮部的排氣側’將上 述排出的氣體供給至上述導入口；及 流量調節器，其係配置於該氣體返回口與上述導入口 之間的上述氣體的路徑上，調整該氣體的流量；等所構成 〇 又，真空泵係具有渦輪部，該渦輪部具有交替及上下 配置的上述旋轉翼及上述固定翼，從與上述真空容器内連 通的開口來直接導入上述處理室内的氣體至配置於該渦輪 部的入口之具有上述旋轉翼的形狀的入口翼。 又，真空泵係配置於真空容器下部，直接連結安裝於 與處理室内連通的開口下方可裝卸地配置於上述旋轉翼與 上述固定翼交替重疊配置的渦輪部的入口上部之具有上述 -9- (6) 200811945 旋轉翼的形狀之入口翼，上述入口翼係爲了防止異物附著 而被加熱。 又’來自氣體導入口或氣體返回口的氣體係從第一段 的上述旋轉翼與次段的固定翼之間來供給。 【實施方式】 & T利用圖面來詳細說明有關本發明的實施形態。 〔實施例〕 利用圖1〜4來説明本發明的實施例之電漿處理裝置 。圖1是表示本發明的實施例之電漿處理裝置的構成槪略 圖。圖1(a)是由本實施例之電漿處理裝置的上方所見的平 面圖。圖1(b)是圖l(a)所示之電漿處理裝置的一部份，特 別是由側方來看、内部的處理室成真空，以利用形成於該 内部的空間的電漿來處理半導體晶圓等基板狀的試料之真 • 空容器爲中心的處理容器及以對該處理室内部進行排氣而 減壓的真空泵爲中心的部份之側面圖。 _ 在該等的圖中，本實施例的電漿處理裝置1〇〇大致分 ， 成前後2個區塊。電漿處理裝置100本體的前方側是被供 給至裝置的晶圚會被搬送至大氣壓下被減壓的處理室，然 後供給至處理室之大氣側區塊1 0 1。電漿處理裝置1 00本 體的後方側爲處理區塊102。 大氣側區塊101是在内部具有具備搬送機械手臂 (r〇bot)(未圖示）的框體106，具備安裝於該框體1〇6收納 10- 200811945 (7) 處理用或清潔用的晶圓之晶圓卡匣1 07及虛擬晶圓用的虛 擬卡匣108。又，搬送機械手臂是在該等的卡匣107，log 與鎖定室109，109’之間進行搬入或搬出晶圓的作業。並 且，大氣側區塊101是在其框體106上具備對位部11()， 在該對位部110内使被搬送的晶圓配合卡匣107，1〇8 $ 鎖定室1 〇 9，1 0 9 ’内的晶圓配置的姿勢來進行其對位。 在處理區塊102中具備： φ 在内部被減壓的真空容器的内部配置有處理晶圓的處 理室之處理單元103，103’ ； 在減壓下搬送晶圓至該等的處理室，且由其上方來_ 的平面形狀大致構成多角形（本實施例中爲大致5角形）& 搬送單元105 ;及 連接此搬送單元1 〇 5與大氣側區塊1 〇 1之複數的鎖定 室 109 ， 1099 ； 該等爲被減壓後可維持高真空度的壓力之單元，處|里 • 區塊爲真空處理用的區塊。 又，本實施例之處理區塊102的處理單元103，103, - 是配置成並列於搬送單元1 〇 5的上述大致五角形的隣接的 、 兩個邊。在本實施例中，該等的處理單元103，1〇3,是具 備處理室的蝕刻處理單元，該處理室是針對從卡匣〗〇7搬 送至處理區塊102的晶圓進行鈾刻處理，搬送單元1〇5是 具備真空搬送室111’其係該等的處理單元可裝卸地被安 裝’内部的室會被減壓維持於高真空度，搬送晶圓之空間 11- (8) 200811945 又，複數個鎖定室109，109’是具有：連接未圖示的 真空排氣裝置，分別於其内部載置有處理對象的半導體晶 圓的狀態下，該内部可在高度的真空狀態及大氣壓的狀態 下維持壓力之空間，可藉由圖上配置於其前後端部之未圖 示的閘閥來可連通地開閉大氣區塊1 〇 1或框體1 06及真空 搬送室1 1 1之間。在本實施例中，該等的鎖定室1 09， 109’是分別具有同等的機能，雖其中任一方非僅實施從真 φ 空往大氣壓及從大氣壓往真空的壓力變化的其中之一，但 亦可根據所求得的規格來將一方限定於其中之一而試用。 又，此處理區塊102具有真空容器113、113’，其係 具有可將上述處理單元103，103’的各個内部減壓進行蝕 刻的處理室。在該等真空容器113，113’的各個下方，如 後述，用以減壓配置於内部的處理室内的排氣手段會被配 置於該等的下方。又，藉由支持台115，115’（其係將上述 真空容器1 1 3，1 1 3 ’及所連結的排氣手段支持於其上方）、 • 及複數根支持柱（其係配置於該支持台1 1 5，1 1 5 ’上來連結 各支持台與真空容器113，113’之間而支持真空容器113 _ ，1 13，），來將各處理單元103，103’固定保持於配置有真 空處理裝置1〇〇的地板面上。 並且，在該等真空容器113，113’的上方配置有收納 電磁線圈的線圈外殼120，120’，該電磁線圈係對配置於 其內部的處理室賦予用以形成電漿的磁場。而且，在線圈 外殼120，120’的上方配置有含導波管的電波源116 ’ 116’ ，該導波管是在於導入用以對處理室內供給電場的電源及 -12- 200811945 Ο) 電場的管路。 爲了該等電波源1 16或1 16,、線圏外殼12〇或12〇，的 維修點檢、或將真空處理容器n 3，〗i 3，内予以大氣開放 來維修點檢處理室内部，而必須使該等移動至上方。因此 ’本實施例中具備安裝於各真空容器113，113,來使上述 電波源1 1 6及線圈外殼〗2 〇，或〗丨6，及！ 2 〇，移動於上下的 升降機·起重機等的起重裝置1 2 1，1 2 1，。藉由該等的起重 φ 裝置121 ’ 121’，使用者可容易開放真空容器113，113,内 部來進行維修·點檢作業。 在本實施例中，起重裝置1 2 1，1 2 1，是分別具備於在 平面形狀爲大致多角形狀的真空搬送室ηι的多角形的各 邊的側面所被安裝的處理單元103，103,中，安裝於各個 真空容器1 1 3，1 1 3 ’的側面。該側面是分別被安裝於與隣 接的真空容器側形成相反的真空容器的側方的面。 在圖1(b)中是擴大顯示圖i(a)所示之處理區塊1〇2的 善 處理單元1 0 3。如該圖所示’在真空容器1 1 3與在其下方 予以支持的支持台1 1 5之間具有空間，該等的空間配置有 用以收納在各個的單元或處理室内的處理所必要的裝置或 _ 對該等供給電力的電源等設備之空間，同時配置有用以在 真空容器113的下部與支持台115上面之間連結該等來支 持真空容器113及其上方的線圈外殼120等之複數根支持 柱117。在此空間内，上述排氣裝置的真空泵114會與真 空容器113下面連結而配置。 處理室是供以使用被減壓的狀態下產生的電漿來處理 -13- (10) (10)200811945 被配置於該處理容器1 1 3内部的處理對象的試料之空間， 以未圖示的通路來與試料被搬送於内部之被減壓的空間亦 即真空間搬送室111連通。此通路是使用未圖示的至少1 個閘閥來可密封地閉塞或開放。 又’本實施例具備流量調節器亦即質量流控制器n 8 ’其係調節供給用以在真空容器丨丨3的處理室内處理試料 的氣體。此質量流控制器丨〗8亦配置於處理單元i 〇3，側， 位於搬送單元1 05的兩側上方。來自配置於未圖示的地板 面下的氣體源之複數種類的氣體會被供給至該質量流控制 器1 1 8來調節流量，然後供給至處理單元1 〇 3内的處理室 。並且’真空搬送室111的内部也會被維持於與處理室内 部大致同等或稍微高的壓力之真空度，因此在搬送單元 105下方配置有和真空處理室ηι内連通的排氣裝置n9 ，藉由此排氣裝置1 1 9的動作來將真空搬送室1 1 1内調節 於所定的壓力。 圖2是表示圖丨所示之實施例的處理單元的構成槪略 剖面圖。本實施例的處理單元1 1 3從其上方起具備：放電 區塊201、及連結於其下方的真空區塊202、及在真空區 塊2 02下方從真空容器113下方排出處理室内的氣體、電 漿、生成物粒子等的真空泵1 14之排氣區塊203。在此構 成中，藉由質量流控制器1 1 8來調節其供給量的處理用氣 體會被供給至放電區塊201，利用來自上述電場供給手段 或磁場供給手段的電場、磁場來形成電漿，處理配置於處 理室内的試料。 -14- 200811945 (11) 上述處理用氣體或電漿會與隨著該處理而生 物一起在真空區塊2 02内往下方移動。並且，藉 1 14的動作來將與真空區塊202連結的排氣區塊 予以排出真空區塊202内的氣體或粒子。 在本實施例中，配置於真空容器113内的處 • 置於該處理室的下部之下部電極亦即試料台207 軸配置。並且，真空室内的下部電極亦與上述軸 φ 致同軸。而且，真空泵114是在真空容器113下 電極20 7同軸，在其正下方和下部電極2 07下面 空間來配置。 在放電區塊2 0 1的下部電極2 0 7上方的空間 2 04，被供給來自上述質量流控制器1 18的處理 而於試料上方形成電漿。在放電室204内所形成 的粒子或生成物的粒子、製程氣體是經由放電室 的下部電極2 0 7周圍的空間，以真空容器1 1 3所 φ 空室205、及以和該真空室連通的真空容器i 13 下方的空間，下部電極207下面與真空泵114之 的真空室206來排出至真空容器113外。 本實施例中是以上述放電室2 04及真空區塊 含的真空室205，206來形成處理室。該處理室 的放電室204中頂部爲藉由配置有供給處理用氣 個貫通孔的淋浴板212來構成，側周圍是以大致 的圓筒内壁213所圍繞。並且，真空區塊的真空 下部電極207周圍是藉由上内側壁2 1 4所構成 成的生成 由真空泵 203内部 理室及配 是大致同 配置成大 方與下部 取所定的 爲放電室 用氣體， 的電漿中 204下方 鼠繞的真 所圍繞的 間的空間 202中所 是在上部 體的複數 圓筒形狀 室205的 ，真空室 -15- 200811945 (12) 2 06及下部電極207下方的内側壁是以下内側壁215及大 致圓形的開閉蓋2 1 5所構成。另外，此開閉蓋2 1 5是以和 大致呈圓筒形狀的下部電極2 1 7的徑大致同徑的圓板所構 成，可藉由未圖示的驅動裝置來改變位置於上下，移動至 上方的下部電極207的正下方’由上來看進入下部電極 2 07的投影面内而予以覆蓋。並且’可移動至下方來密封 真空室206與真空泵114的入口之間而閉塞。 在如此的構成中，本實施例的處理單元1 03是在使試 料載置於下部電極207上的載置面之後，在放電室204内 從上方自淋浴板212的上述貫通孔來導入處理氣體。貫通 孔的位置是配置於和下方的圓形基板狀的試料的徑相同或 更大徑的範圍。 來自構成電波源1 1 6的電源209之微波會經由導波管 208來透過淋浴板212而導入放電室204内。並且，在放 電室204上方及側方的外部的線圈外殼120所圍繞的位置 配置有螺線管（solenoid)線圈210，21 1，將磁場供給至放 電室204内。藉由該等電場、磁場的相互作用來激勵放電 室204内的處理用氣體而形成電漿，且對配置於下部電極 207内的導電性構件供給所定的高頻電力，在試料表面形 成偏壓電位的狀態下，進行試料的處理。又，一面進行試 料的處理，一面藉由真空室206下部的真空泵114之排氣 的動作來使處理室内的氣體、粒子往處理室的下方移動， 以下邰電極2 0 7的軸爲中心，在此周圍形成偏倚少的流動 ’而使處理室内調節至所定的壓力。 16- (13) (13)200811945 又，本實施例是將利用真空泵11 4來調節排氣量的手 段配置於從處理室排氣的氣體或粒子的路徑外。亦即，如 圖2所示，具備與供給至放電室204的處理用氣體的導入 路徑2 1 6並列配置的導入路徑2 1 7，經由此導入路徑2 1 7 來將所定的氣體導入真空泵1 1 4。本實施例是藉由調節供 給至放電室204的處理用氣體的流量之質量流控制器1 1 8 來調節供給至真空泵1 1 4的所定氣體的流量，但亦可具備 各相異的流量調節裝置。 本實施例中，所定的氣體是使用氬等的惰性氣體或氮 等對處理室内的處理或構成排氣路徑的構件影響小的物質 。被調整流量的惰性氣體會被導入真空泵1 1 4的壓縮部， 藉由真空泵114之處理室内的氣體實質單位時間的排氣量 調節，來調節處理室内的壓力。 圖3是以圖2所示之處理單元103的真空容器113下 方的真空泵1 1 4爲中心擴大顯示的縱剖面圖。在此圖中， 本實施例的真空泵1 1 4是經由安裝於真空容器1 1 3下面的 連結凸緣313利用螺栓等來與真空容器113連結。 真空泵114本體是具備··在大致圓筒形狀的外殼301 内部旋轉壓縮的壓縮部、及使配置於中心的旋轉軸旋轉的 驅動部，且於下方具備排氣口 3 04，其係排出被壓縮後使 壓力増大之處理室内的氣體。 外殼301内的上方是形成渦輪部3〇2，該渦輪部302 是具備： 在旋轉軸周圍放射狀配置有複數片的葉片之各段的旋 -17· (14) (14)200811945 轉翼305 ;及 具有配置於該等的旋轉翼之間從外殼3 0 1的外周側放 射狀延伸至旋轉軸側的複數片的葉片來與外殼3 0 1連結而 位置被固定之複數段的固定翼306。 並且，在此渦輪部的下側配置有螺紋部3 03，該螺紋 部3 03會流入從與渦輪部3 02出口連結的渦輪部3 02所排 出的氣體。此螺紋部3 03是在與外殼3 0 1側連結而位置被 固定的部份及隔著微小的間隙而對向配置旋轉於旋轉軸周 圍的部份形成螺紋，氣體會通過該等的螺紋間而排出。 配置於螺紋部3 03的後端之空間是與排氣口 304連通 ，通過渦輪部3 02、螺紋部3 03壓力上昇後的氣體會被排 氣。藉由如此的構成，從形成於真空容器1 1 3下部藉由開 閉蓋2 1 5來開閉的排氣口 3 07流入之處理室内的氣體、粒 子等會從在此排氣口 3 07下方予以連通的排氣泵114的吸 入口 3 08來流入壓縮部的渦輪部302。渦輪部3 02是藉由 在旋轉軸周圍相對地對向移動的各段葉片彼此間的相互作 用來將氣體或粒子送出至下方者，——面經由在旋轉軸的軸 方向交替配置的旋轉軸周圍旋轉的旋轉翼3 04與各翼配置 於同軸周圍的固定翼3 06之間來送出至下方’一面被壓縮 。來自渦輪部302的排氣更經由下方的螺紋部303來移動 至後流側，從排氣口 3 〇4以所定的壓力排出。 旋轉翼3 0 5或螺紋部3 0 3的旋轉部份是經由旋轉軸來 與馬達部309連結，藉由馬達部309的驅動來使該等旋轉 ，進行處理室内的排氣。另外，在旋轉軸的下端部，爲了 -18- (15) 200811945 使該旋轉軸的旋轉圓滑，而配置有磁氣軸承。並且，該 空泵1 1 4的吸入口 3 0 8是與排氣口 3 0 7直接連通，以吸 口 3 0 8能夠直接面臨處理室内的方式配置。 特別是本實施例中，渦輪部3 0 2的最上段，亦即面 吸入口 3 0 8的段的入口翼3 1 0是在外殻3 0 1側固定位置 翼，固定翼3 06之一的入口翼310是位於壓縮部的最上 來與排氣口 307連通。本實施例的入口翼31〇的各葉片 形狀是與渦輪部3 02的其他段的固定翼同等’複數個葉 是從旋轉軸的中心往環狀的外周放射狀延伸。此入口翼 不與下方的渦輪部3 02的最上段的旋轉翼3 05連結，可 卸、安裝於處理室内部方向。 在真空泵1 1 4的渦輪部的最上段的旋轉翼3 05與其 下方的固定翼3 06的葉片之間配置有藉由質量流控制 1 1 8來調整流量的惰性氣體會經由氣體的導入路徑2 1 7 導入的導入口 312。此導入口 312是被連通至導入路 2 1 7，該導入路徑2 1 7是被安裝於厚壁的凸緣部，該凸 部是圍繞外殻301外周而配置，該外殼301是圔繞大致 筒形上的旋轉翼外周端，在壓縮部的旋轉軸配置複數個 被導入渦輪部3 02的惰性氣體是與來自處理室内的氣體 粒子一起藉由渦輪部302的排氣動作來送出至後流側’ 終從排氣口 304排氣。 實質上從處理室内排氣的氣體、粒子的量是藉由惰 氣體導入而低減，在調節此惰性氣體的導入量之下，來 處理室内的排氣量會被調節，放電室204、真空室205 真 入 對 的 段 的 片 是 拆 正 器 來 徑 緣 圓 最 性 白 -19· (16) (16)200811945 206内的壓力會被調節。本實施例的質量流控制器1 1 8之 來自導入口 3 1 2的惰性氣體的流量調節是按照惰性氣體源 側的壓力與導入口 3 1 2側的壓力之壓力差來進行。氣體源 側的壓力是被設定成根據設置電漿處理裝置的無塵室等建 築物所預定的壓力，因此壓力差可大，可高精度調節流量 ，提高處理的精度。 圖4是表示圖3所示之真空泵的構成槪略的上面圖。 圖4(a)是由排氣口 3 07的上方的處理室内所見時的真空泵 114的平面圖。圖4(b)是由上方來看真空泵114的入口翼 3 1 0的平面圖。本實施例中，試料的處理中是經由排氣口 307及吸入口 308來連通真空室206與真空泵114的上部 的壓縮部，在此真空容器的開口與真空泵的開口之間未具 備以往技術那樣的閥等之用以調節排出量的手段、裝置。 亦即，處理室下部的排氣口 3 07與壓縮部的最上端的固定 翼之入口翼310會被連通，此入口翼310是直接暴露於處 理室内的空間。 又，入口翼3 1 0是具有在配置於相當於旋轉軸的上方 的位置之大致圓形的罩蓋40 1的外周側放射狀延伸的複數 片的葉片4 1 2，各葉片的外周端是延伸至吸入口 3 08的内 周緣的外側。並且，氣體的導入口 312是針對圖上中心的 旋轉翼3 05的旋轉軸的中心來軸對象配置於複數處（本例 爲4處），抑止被導入的氣體所引發排氣的面内方向的不 均一。 又，渦輪部的第一段的固定翼之入口翼310是從真空 -20 - (17) (17)200811945 泵1 1 4的大致圓筒形狀的外殼往中央部的旋轉軸方向放射 狀配置的複數個翼402會如圖4(b)所示那由上方來看翼彼 此間無間隙配置。圖4(c)是表示由側方來看入口翼3 1 0的 側面圖，各葉片的配置模式圖。如此圖所示，各葉片是在 與相當於圖上的上下方向的旋轉軸垂直的（水平的）方向取 所定的間隙，且針對旋轉軸及配置於圖上箭號所示的正下 方的旋轉翼3 05的旋轉方向來賦予角度配置。各葉片是針 對旋轉軸或排氣的流向而具有上方的上流端及下方的下流 端，此乃針對正下方的旋轉翼305的旋轉方向，在上方配 置上流端，在下方配置下流端。此乃與正下方的旋轉翼 3 05的各葉片的安裝角度形成逆向。從旋轉軸的上方來看 入口翼3 1 0時，各葉片的上流端與相隣的葉片的下流端是 重疊。因此，入口翼310的下方的渦輪部3 02從真空泵 1 1 4的上方投影時未暴露。藉此構成，隨著具有旋轉翼的 渦輪部3 02的旋轉，可抑止存在於渦輪部3 02内的異物進 入處理室内。 並且，從真空泵114的外殼301内，入口翼310是作 爲單體在處理室内側（上方）可從真空泵114本體裝卸地安 裝。而且，在安裝於真空泵1 1 4的入口的狀態下從內藏於 真空泵114内之未圖示的加熱器來藉由熱傳導加熱。藉此 加熱，抑止在入口翼310的表面附著有來自處理室内的生 成物等附著性強的物質，抑止異物對處理室内的處理造成 不良影響。又，即使如此的生成物附著，爲了處理室内的 維修點檢而開放時，可不必一倂交換真空泵1 1 4本身進行 -21 - (18) (18)200811945 交換，交換用的作業會變得容易。 圖5是表示與圖2或3所示之本發明的實施例相異的 變形例之真空泵的構成槪略縱剖面圖。與圖2或3所示之 實施例的差異點是在真空泵114的壓縮部的上流側及後流 側具備供給氣體的複數個導入口。 亦即，在圖5所示的變形例中，與圖2或3所示的實 施例同樣，在面向渦輪部3 02的旋轉翼3 05的最上段與其 正下方的固定翼306之間的間隔之側壁配置有導入口 501 ，其係導入藉由質量流控制器1 1 8來調節其流量的惰性氣 體。此導入口 501是與被安裝於凸緣部5 05的氣體導入路 徑503連通，該凸緣部505是形成於外殼301的外周之剖 面厚度大者。 又，本變形例中，在面向渦輪部3 02的後流端（排出 端）與螺紋部302的入口之間的排氣氣體的流路，有別於 導入口 501另設有導入惰性氣體的氣體導入口 502。此導 入口 502是在外殼301的下部與安裝於凸緣部505的下方 所被配置的別的凸緣部506之氣體的導入路徑504連通。 本變形例中，流通於導入路徑504的惰性氣體的流量 亦與導入路徑503的情況同樣藉由質量流控制器1 1 8來調 節。另一方面，亦可藉由有別於質量流控制器1 1 8的其他 流量調節裝置來調節經由導入路徑5 04之來自導入口 5 02 的惰性氣體的供給。 從導入口 5 0 1供給至上方的渦輪部3 02之氣體可爲惰 性氣體或製程氣體，爲了使真空泵114之處理室内的氣體 • 22、 (19) (19)200811945 、粒子的排氣量大幅度變動而被導入。又，被供給至下方 的導入口 502之氣體爲惰性氣體，爲了使真空泵114之處 理室内的氣體、粒子的排氣量相對地縮小變動而被導入。 從真空泵114的壓縮部的上流側的導入口 501導入的氣體 是藉由從壓力高的下流側的導入口 502導入的氣體來使處 理室内的壓力大幅度變動。另一方面，在小幅度使壓力變 動時，是藉由調節來自後流側的導入口 502之惰性氣體的 導入下進行。又，導入口 502亦可形成於螺紋部3 03。 例如，在不同的壓力下處理積層於試料表面而形成的 複數個種類相異的膜時，在處理上方的膜之後進行下方的 膜的處理時大幅度變更壓力時是藉由從上流側的導入口 5 0 1供給氣體來使處理室内的壓力在更短時間大幅度變動 ，藉由來自後流側的導入口 5 02之氣體的導入來進行用以 使處理室内安定於所定的壓力之微調整。藉由此構成，可 迅速地變更、調節對應於相異種類的膜的處理之處理室内 的壓力、進而能夠提高處理的效率。 圖6是表示與圖2或3所示之本發明的實施例相異的 其他變形例的真空泵的構成槪略縱剖面圖。與圖2或3所 示之實施例的差異點是在真空泵1 1 4的渦輪部具備供給來 自螺紋部3 03的後流端（排出端）的氣體的一部份之導入口 601 ° 亦即，不是將惰性氣體導入真空泵1 14的渦輪部302 之構成，而是將真空泵1 1 4的壓縮部的後流側的排氣氣體 的一部份由最上段的旋轉翼305與正下方的固定翼306之 -23· (20) (20)200811945 間導入渦輪部3 02。此導入口 6 0 1是經由返回氣體用流路 603來與連通至螺紋部3 03的排出端而開口的返回氣體用 吸入口 602連結。在返回氣體用流路603上，爲了調節返 回用氣體的流量，而配置有具備逆流防止閥及流量調節噴 嘴或閥的流量調節器604。 此變形例的真空泵114的排氣量是以流量調節器604 來調節。並且，在此路徑上配置有去除異物的過濾器。此 變形例，亦可藉由使來自真空泵1 1 4的壓縮部的排氣回到 壓縮部的入口側，在調整真空泵1 1 4的排出量之下，調節 處理室内的壓力。並且•在此變形例中亦於真空泵114的 渦輪部302的上方配置有圖4所示的入口翼310，在吸入 口 308與真空容器113下部的排氣口 3 07之間並未配置有 閥等的流量調節手段，來自真空容器1 1 3内的處理室之排 氣是直接從真空泵114的吸入口 308供給至入口翼310。 本變形例中，可抑止藉由回到渦輪部的排氣在排氣中 所含的成分中形成異物的物質進行真空容器内，而安定實 現真空容器内的壓力，且安定進行處理。 圖7是表示圖1的實施例之電漿處理裝置的動作流程 圖。此圖中是表示以各種相異的條件來處理積層配置於試 料表面上的複數個膜層時之處理室内的壓力的調節及處理 的動作流程。 在此圖中，爲了實現用以處理上方的膜的條件，首先 在試料的處理開始時，旋轉驅動真空泵1 1 4，開始處理室 内的排氣（步驟70 1 )，確認處理室内的壓力是否到達所定 -24- (21) (21)200811945 的壓力及是否有洩漏（步驟7 0 2 )。然後’在下部電極2 〇 7 上藉由未圖示的機械手臂等的搬送裝置來搬送試料而使載 置後，從放電室204上方的淋浴板212來導入用以稀釋處 理用氣體的氣體。此刻，該等的氣體的導入是藉由質量流 控制器11 8來調節。 同時，在真空泵114的導入口 312，惰性氣體會一邊 藉由質量流控制器1 1 8來調節一邊被供給，真空栗i〗4之 處理室内的排氣量會被調節，以使處理室内的壓力能夠接 近所定的値之方式開始調節，S TEP 1的處理開始進行（步 驟703)。然後，處理用氣體會從淋浴板212藉由質量流控 制器1 1 8來調節流量而被供給（步驟7〇4)，確認處理室内 的壓力是否被設定於所定的壓力値（步驟7 05)。 當判定壓力未達所定的値時，返回步驟7 0 3，藉由質 量流控制器1 1 8來調節惰性氣體的流量。又，當判定到達 十分接近所定値的範圍時，前進至步驟706開始試料的處 理（步驟706)。 判定處理的開始後，處理的終點的到達（步驟7〇7；)。 當判定未到達終點時，返回步驟7 〇 5 —面調節處理室内的 壓力一面繼續進行處理。另一方面，當判定處理的終點時 ’藉由質量流控制器1 1 8來停止處理用氣體的供給（步驟 708) 〇 其次’變更設定對應於下方的膜的處理之各條件。因 應於此’與步驟7 01同樣，藉由真空泵n 4的動作來對處 理室内進行真空排氣，將在STEP〗所使用的各處理用氣體 -25- (22) 200811945 或生成物予以排氣。排氣至所定的壓力爲止，若確認該等 的排氣終了，則在真空泵〗丨4的導入口 3〗2，惰性氣體會 藉由質量流控制器〗〗8來一面調節一面供給，真空泵i i 4 之處理室内的排氣量會被調節，以使處理室内的壓力能夠 接近所定的値之方式開始調節，STEP2的處理開始進行（ 步驟 710)。此刻的惰性氣體的導入量若在 STEP 1與 STEP2處理室内的壓力條件不同，則會形成與步驟703的 g 導入量相異。 又’對應於STEP2的流量、組成的處理用氣體會從淋 浴板212導入包含放電室2〇4的處理室内（步驟711)，確 認處理室内的壓力是否適合於STEP2的處理的値（步驟 7 0 1 2 )。當判定非適當的値時，回到步驟7 1 〇，當判定到達 適當的壓力時’前進至步驟713，開始下方的膜的處理（步 驟 7 1 3 )。 此情況，與步驟7 0 6同樣，對下部電極2 〇 7供給所定 馨 的筒頻電力’將偏壓電位形成於試料表面來進行處理。並 且，在處理中調節流通於下部電極2 0 7内的冷媒通路的冷 媒的温度或供給至試料與下部電極207的試料載置面之間 的氮等熱傳導性氣體的壓力，而來一面調節試料的温度一 面進行處理。 判定開始處理後是否到達處理的終點（步驟714)，當 判定未到達終點時’回到步驟7U ’ 一面調節處理室内的 壓力一面繼續處理。當判定處理到達終點時，前進至步驟 7 1 5，停止處理用氣體供給至處理室，停止處理。往後， -26 - (23) 200811945 當有應再處理的膜時，重複上述步驟。 在本實施例中，上述步驟7〇3或步驟710之處理室内 壓力的調節是藉由導入氣體至旋轉驅動的真空泵1 1 4的壓 縮部，調節來自處理室内的排氣量之下進行。爲了使從 STEP1到TEP2之處理室内的壓力更快速變更，可不進行 一旦從處理室内排除STEP1用的處理用氣體等之步驟709 ，而移至步驟7 1 0。 0 在圖7的例子中，真空泵114的構成雖是以圖2或3 的構成爲前提，但亦可適用圖6所示之真空杲114的構成 。又，如圖5所示，在壓縮部的上流側、下流側的複數處 配置供給惰性氣體的導入口 5 0 1.，5 02，在步驟7 1 0中，當 處理室内的壓力大幅度變動時，首先從導入口 501導入惰 性氣體，使真空泵1 1 4的排氣量大幅度變動，使接近目標 的排氣量（壓力）之後切換成來自導入口 502之惰性氣體的 導入，爲了使安定形成目標的壓力，可微調排氣量。 • 如以上所述，若利用上述實施例，則可更安定實現處 理室内的壓力，可使處理的效率提高。又，可抑止異物從 真空泵進行至處理室内，而來提高處理的良品率。又，維 修或點檢的時間會被縮點，電漿處理裝置的作動率會提升 【圖式簡單說明】 圖1是表示本發明的實施例之電漿處理裝置的構成槪 略圖。 -27- (24) (24)200811945 圖2是表示圖1所示之實施例的處理單元的構成槪略 剖面圖。 圖3是表示以圖2所示之處理單元的真空容器下方的 真空栗爲中心擴大顯不的縱剖面圖。 圖4是表示圖3所示之真空泵的構成槪略上面圖。 圖5是表示與圖2或3所示之本發明的實施例相異的 變形例之真空泵的構成槪略縱剖面圖。 圖6是表示與圖2或3所示之本發明的實施例相異的 其他變形例之真空泵的構成槪略縱剖面圖。 圖7是表示圖1的實施例之電漿處理裝置的動作流程 圖。 【主要元件符號說明】 1 〇 〇 :電漿處理裝置、1 〇 1 :大氣側區塊、〇 2 ··處理 區塊、103，1〇3,：處理單元、105 ··搬送單元、1〇6 :框 體、107，1〇8 ··卡匣、109，109,：鎖定室、ηι :真空搬 送室、113，113，：真空容器、114:真空泵、n5，n5，· 支持台、1 1 6，1 1 6，：電波源、1 1 8，1 1 8，：質量流控制器 、DO，120’：線圈外殻、121，121’：起重裝置。 -28-200811945 (1) IX. INSTRUCTIONS OF THE INVENTION [Technical Field] The present invention relates to a plasma processing apparatus for treating a sample by using plasma in a processing chamber in a vacuum vessel, in particular, adjusting a gas in a processing chamber by a vacuum pump A plasma processing apparatus that discharges, thereby adjusting the pressure in the processing chamber inside the vacuum vessel. Φ [Prior Art] In the plasma processing apparatus described above, in recent years, in order to realize finer and more precise processing, it is required to form a plasma having a higher density and a more uniformity. Moreover, after such a high-density plasma is stabilized, it is required to achieve a more stable pressure of the processing chamber in the vacuum vessel with a higher degree of vacuum (lower pressure). In such a plasma processing apparatus, the processing chamber conventionally disposed inside the vacuum container is a vacuum pump or the like for removing particles such as gas generated inside the plasma or the processing in the processing chamber Φ. The exhaust is connected. Further, a means for adjusting the amount of exhaust per unit time is disposed on the exhaust passage that communicates from the inside of the processing chamber to the inlet of the vacuum pump, whereby the amount of gas or particles in the chamber inside the chamber is controlled by the operation of the adjusting device. The adjustment is performed to adjust the pressure of the substrate-like sample such as a semiconductor wafer on which the object to be processed is placed or the inside of the processing chamber in which the plasma is formed. In the conventional processing apparatus, the impedance or flowability (conductance) of the airflow discharged between the exhaust ports and the inlets that regulate the passage from the exhaust port of the lower portion of the processing chamber in the vacuum chamber to the inlet of the vacuum pump is disposed. Means, -5- (2) (2) 200811945 Adjust the amount of gas discharged from the vacuum vessel and adjust the internal pressure of the vacuum vessel. In terms of means to adjust such flow resistance or flowability. It is contemplated that one or more valves that vary the size or area of the opening of the passage or inlet or vent may be used to adjust the size of the opening by such rotation of the valve or by moving in the direction of the axis across the line or area. For example, Japanese Patent Publication No. 2005-1 〇1 5 9 8 (Patent Document 1) is disclosed. According to the conventional technique, the substantially circular opening of the gas discharged into the processing chamber directly under the sample stage on which the sample is placed in the processing chamber is placed, and the vacuum pump that removes the gas disposed on the lower side of the opening. There are a plurality of rotating plate-shaped valves between them, and the area of the passage through which the regulating gas can pass can be changed by the rotation of the valves. Further, in other conventional techniques, for example, the vacuum pump itself connected to the vacuum container regulates the discharge amount per unit time of gas or the like from the processing chamber. Such a prior art is disclosed in Japanese Laid-Open Patent Publication No. 2005-140079 (Patent Document 2). This prior art relates to a vacuum pump having an inlet that communicates with a processing chamber in a vacuum vessel, and more particularly to a turbomolecular pump that can be depressurized to a high vacuum state, and is provided with a compression unit (connected to each other on the same rotating shaft). A portion of the exhaust of the outlet portion of the plurality of rotating blades and fixed wings is returned from the front end side of the moving blade to the compression portion while adjusting the amount thereof, thereby adjusting the discharge of the gas in the substantial processing chamber. Gas volume. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2005- 1 01 598 (Patent Document 2) Japanese Laid-Open Patent Publication No. 2005-1 40079-6-200811945 (3) SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) The technology is insufficient because it is insufficiently considered for the following points. That is, in the prior art disclosed in Patent Document 1, in order to form a higher vacuum state in the processing chamber, it is necessary to form a large opening (or opening area) of the plate-shaped valve. The adjustment accuracy of the pressure φ force at a large opening is reduced. That is, in order to achieve such a large opening, the valves are rotated, and the angle of each valve becomes smaller in the axial direction of the passage (the surface of the valve approaches the axis parallel to the passage). In this state, the pressure in the processing chamber is reduced, and the change in the discharge amount of the gas which changes the angle of each valve is small, so that the controllability is lowered, and the high degree of vacuum of the sinus cannot be stably performed with high precision. Problems. On the other hand, Patent Document 2 discloses that a vacuum pump including a turbine unit includes a passage for returning a part of the exhaust gas discharged from the turbine unit to the turbine # portion, and is effective by returning the exhaust gas. In the technique of changing the amount of exhaust gas, the turbine portion is compressed and exhausted while being compressed by a plurality of blades radially arranged around the rotating shaft and fixed wings fixed to the outer casing. However, in Patent Document 2, the particles of the product having strong adhesion in the gas in the compression unit adhere to the vacuum pump or enter the inside of the vacuum pump, and enter the processing chamber to form a foreign matter in the processing chamber. The issue of dealing with yield or efficiency is not considered. In addition, in the conventional technical configuration, the composition of the gas changes on the intake side and the exhaust side of the vacuum pump, and if such a gas is returned to the true (4) (4) 200811945 air pump suction (inlet) On the side, there is a problem that the gas composition inside the processing chamber changes. SUMMARY OF THE INVENTION An object of the present invention is to provide a plasma processing apparatus which can stably achieve pressure control in a processing chamber. Further, there is provided a plasma processing apparatus which can perform processing of a sample with high precision and good yield. ' (means to solve the problem). The above object is achieved by a plasma processing apparatus which is a plasma processing apparatus which processes a sample by using plasma formed in a processing chamber, and is characterized in that it includes a processing chamber which supplies a processing gas while being internally supplied. Forming a plasma; a sample stage on which a sample to be processed is placed; and a vacuum pump that is a vacuum pump that discharges gas from the processing chamber below the sample and depressurizes, and includes a compression unit having a rotating wing and a fixed wing The rotor and the fixed wing have a plurality of wings disposed in the casing and disposed coaxially, and an exhaust port for discharging the gas discharged from the compression portion to the outside of the casing; An inert gas is introduced between the rotating vane disposed at an uppermost position of the compressing portion and a fixed wing disposed below, and a flow regulator is disposed between the gas reservoir of the inert gas and the inlet. Adjust the amount of the above inert gas. Further, it is achieved by a plasma processing apparatus which is a plasma processing apparatus for processing a sample by using plasma formed in a processing chamber, and is characterized by a processing chamber of -8-(5) (5) 200811945. A sample is placed on the inside while the processing gas is supplied, and the sample stage is placed with the sample to be processed thereon. The vacuum pump discharges the gas in the processing chamber from below the sample and is decompressed, and includes a compression unit. The utility model is disposed under the processing chamber and is composed of a rotating wing and a fixed wing. The rotating wing and the fixed wing are formed by a plurality of coaxial wings in the casing. The guiding inlet is arranged to be discharged from the compression part. The gas is discharged to the outer periphery of the compression portion between the exhaust port outside the casing and the fixed wing below the rotary wing, and an inert gas is introduced; the gas return port 'is disposed on the exhaust side of the compression portion' to discharge the gas a gas is supplied to the inlet port; and a flow regulator is disposed on a path of the gas between the gas return port and the inlet port to adjust a flow rate of the gas; Further, the vacuum pump includes a turbine portion having the rotary vanes and the fixed vanes arranged alternately and vertically, and is introduced directly into the gas in the processing chamber from an opening communicating with the inside of the vacuum chamber to an inlet disposed in the turbine portion An inlet wing having the shape of the above-described rotor. Further, the vacuum pump is disposed in a lower portion of the vacuum vessel, and is directly connected to the lower portion of the inlet of the turbine portion that is detachably disposed below the opening that communicates with the processing chamber, and has the above-mentioned -9- (6) 200811945 The inlet wing of the shape of the rotating wing, the inlet wing is heated to prevent foreign matter from adhering. Further, the gas system from the gas introduction port or the gas return port is supplied from between the above-described rotor blade of the first stage and the fixed blade of the second stage. [Embodiment] An embodiment of the present invention will be described in detail with reference to the drawings. [Embodiment] A plasma processing apparatus according to an embodiment of the present invention will be described with reference to Figs. Fig. 1 is a schematic view showing the configuration of a plasma processing apparatus according to an embodiment of the present invention. Fig. 1(a) is a plan view seen from above of the plasma processing apparatus of the present embodiment. Figure 1 (b) is a part of the plasma processing apparatus shown in Figure 1 (a), in particular, from the side, the internal processing chamber is vacuumed to utilize the plasma formed in the internal space. A side view of a portion of a processing container centered on a substrate-like sample such as a semiconductor wafer and a vacuum pump centered on the inside of the processing chamber and evacuated. _ In the drawings, the plasma processing apparatus 1 of the present embodiment is roughly divided into two blocks. On the front side of the main body of the plasma processing apparatus 100, the wafer supplied to the apparatus is transported to a processing chamber which is decompressed under atmospheric pressure, and then supplied to the atmospheric side block 110 of the processing chamber. The rear side of the plasma processing apparatus 100 is the processing block 102. The atmosphere side block 101 has a housing 106 having a transfer robot (not shown) therein, and is attached to the housing 1〇6 for storage. 10-200811945 (7) For processing or cleaning The wafer wafer 匣 107 and the virtual card 匣 108 for the virtual wafer. Further, the transport robot is an operation of loading or unloading the wafer between the cassette 107 and the log and the lock chambers 109 and 109'. Further, the atmosphere side block 101 has a aligning portion 11 () on the casing 106, and the wafer bonding cassette 107, 1 〇 8 $ lock chamber 1 〇 9 is transported in the aligning portion 110, The position of the wafer configuration within 1 0 9 ' is used to perform its alignment. The processing block 102 includes: φ a processing unit 103, 103 ′ in which a processing chamber for processing a wafer is disposed inside a vacuum container that is internally decompressed; and the wafer is transferred to the processing chamber under reduced pressure, and The planar shape from the upper side thereof substantially constitutes a polygonal shape (a substantially octagonal shape in the present embodiment) & the transport unit 105; and a lock chamber 109 that connects the plurality of transport unit 1 〇5 and the atmospheric side block 1 〇1 , 1099 ; These are the units that can maintain the high vacuum pressure after being decompressed, and the block is the block for vacuum processing. Further, the processing units 103, 103, - of the processing block 102 of the present embodiment are arranged in parallel with the two sides of the substantially pentagonal shape of the transport unit 1 〇 5 . In the present embodiment, the processing units 103, 1〇3 are etch processing units having processing chambers for uranium processing of wafers transferred from the cassettes 7 to the processing block 102. The transport unit 1〇5 is provided with a vacuum transfer chamber 111', and the processing unit is detachably mounted. The internal chamber is decompressed and maintained at a high degree of vacuum, and the space for transporting the wafer is 11-(8) 200811945 Further, the plurality of lock chambers 109, 109' have a vacuum evacuation device (not shown), and in a state in which the semiconductor wafer to be processed is placed inside, the inside can be in a high vacuum state and atmospheric pressure. In the state in which the pressure is maintained, the atmospheric block 1 〇 1 or the frame 106 and the vacuum transfer chamber 1 1 1 can be opened and closed by a gate valve (not shown) disposed at the front and rear ends of the figure. . In the present embodiment, the lock chambers 109, 109' have the same function, respectively, although either of them does not only perform one of the pressure changes from the true φ air to the atmospheric pressure and from the atmospheric pressure to the vacuum, but It is also possible to try one of them by limiting one of them according to the obtained specifications. Further, the processing block 102 has vacuum containers 113, 113' having a processing chamber capable of etching the respective internal pressure of the processing units 103, 103'. Below each of the vacuum containers 113, 113', as will be described later, the exhaust means for decompressing the inside of the processing chamber is disposed below the inside. Further, the support table 115, 115' (which supports the vacuum container 1 1 3, 1 1 3 ' and the connected exhaust means above), and a plurality of support columns (which are disposed in the The support table 1 1 5,1 1 5 'connects between the support tables and the vacuum containers 113, 113' to support the vacuum containers 113 _ , 13 13 ) to fix the processing units 103 , 103 ′ in the arrangement The surface of the vacuum processing device 1〇〇. Further, above the vacuum containers 113, 113', coil housings 120, 120' for accommodating electromagnetic coils for applying a magnetic field for forming plasma to a processing chamber disposed inside the coil housings 120, 120' are disposed. Further, a wave source 116' 116' including a waveguide is disposed above the coil housings 120, 120', and the waveguide is introduced with an electric field for supplying an electric field to the processing chamber and an electric field of -12-200811945 Ο) Pipeline. For the maintenance of the electric wave source 1 16 or 16 16 , the coil casing 12 〇 or 12 〇, or the vacuum processing container n 3, ì i 3, the atmosphere is opened to repair the inside of the inspection processing chamber, It is necessary to move the above to the top. Therefore, the present embodiment is provided with each of the vacuum containers 113 and 113 to provide the above-mentioned radio wave source 1 16 and coil case 22, or 丨6, and ! 2 〇, Lifting device 1 2 1,1 2 1, such as elevators and cranes that move up and down. With these lifting φ devices 121'''', the user can easily open the vacuum containers 113, 113 and perform internal maintenance and inspection operations. In the present embodiment, the lifting devices 1 2 1, 1 2 1 are processing units 103, 103 which are respectively provided on the side surfaces of the sides of the polygonal shape of the vacuum transfer chamber ηι having a substantially polygonal shape in plan view. , medium, installed on the side of each vacuum container 1 1 3, 1 1 3 '. The side faces are respectively mounted on the side of the side of the vacuum container opposite to the adjacent vacuum container side. In Fig. 1(b), the good processing unit 1 0 3 of the processing block 1〇2 shown in Fig. i(a) is enlarged. As shown in the figure, there is a space between the vacuum container 133 and the support table 1 15 supported underneath, and the space is arranged to be used for the processing necessary for storage in each unit or processing chamber. Or the space of the equipment such as the power source for supplying electric power, and the plurality of the coil housings 120 and the like which are connected between the lower portion of the vacuum container 113 and the upper surface of the support table 115 to support the vacuum container 113 and the coil housing 120 and the like. Support column 117. In this space, the vacuum pump 114 of the above-described exhaust device is disposed to be connected to the lower surface of the vacuum container 113. The processing chamber is a space for processing a sample to be processed inside the processing container 1 1 3 by using a plasma generated in a state of being decompressed, and is not shown. The passage communicates with the vacuum transfer chamber 111, which is a space in which the sample is transported to be decompressed inside. This passage is sealably closed or opened using at least one gate valve (not shown). Further, the present embodiment is provided with a flow rate regulator, i.e., a mass flow controller n 8 ', for regulating the supply of gas for processing the sample in the processing chamber of the vacuum vessel 3 . The mass flow controller 8 is also disposed on the processing unit i 〇 3, on the side, above the sides of the transport unit 105. A plurality of types of gas from a gas source disposed under the floor surface (not shown) are supplied to the mass flow controller 1 1 8 to adjust the flow rate, and then supplied to the processing chamber in the processing unit 1 〇 3 . Further, the inside of the vacuum transfer chamber 111 is maintained at a vacuum level which is substantially equal to or slightly higher than the inside of the processing chamber. Therefore, an exhaust device n9 communicating with the vacuum processing chamber η1 is disposed below the transport unit 105. Thereby, the inside of the vacuum transfer chamber 1 1 1 is adjusted to a predetermined pressure by the operation of the exhaust device 119. Fig. 2 is a schematic cross-sectional view showing the configuration of a processing unit of the embodiment shown in Fig. 2; The processing unit 1 1 3 of the present embodiment includes, from the upper side thereof, a discharge block 201, a vacuum block 202 connected thereto, and a gas discharged from the lower portion of the vacuum container 113 under the vacuum block 02, An exhaust block 203 of a vacuum pump 1 14 such as a plasma or a product particle. In this configuration, the processing gas whose supply amount is adjusted by the mass flow controller 1 18 is supplied to the discharge block 201, and the electric field and the magnetic field from the electric field supply means or the magnetic field supply means are used to form the plasma. The sample disposed in the processing chamber is processed. -14- 200811945 (11) The above-mentioned processing gas or plasma moves downward in the vacuum block 202 in conjunction with the biomass as a result of the treatment. Further, the exhaust block connected to the vacuum block 202 is discharged from the gas or particles in the vacuum block 202 by the action of 14. In the present embodiment, the portion disposed in the vacuum vessel 113 is disposed on the lower portion of the lower portion of the processing chamber, that is, the sample stage 207. Further, the lower electrode in the vacuum chamber is also coaxial with the above-mentioned axis φ. Further, the vacuum pump 114 is coaxial with the electrode 207 under the vacuum vessel 113, and is disposed directly below the space below the lower electrode 207. A space 024 above the lower electrode 207 of the discharge block 201 is supplied with processing from the mass flow controller 1 18 to form a plasma over the sample. The particles or the product particles formed in the discharge chamber 204 and the process gas are via a space around the lower electrode 207 of the discharge chamber, the vacant chamber 205 of the vacuum vessel 1 1 3, and the vacuum chamber. The space below the vacuum container i 13 is discharged from the lower portion of the lower electrode 207 and the vacuum chamber 206 of the vacuum pump 114 to the outside of the vacuum container 113. In the present embodiment, the processing chamber is formed by the discharge chambers 204 and the vacuum chambers 205, 206 included in the vacuum block. The top of the discharge chamber 204 of the processing chamber is constituted by a shower plate 212 on which a gas supply through hole is supplied, and the side periphery is surrounded by a substantially cylindrical inner wall 213. Further, the vacuum lower electrode 207 around the vacuum block is formed by the upper inner side wall 214, and is formed by the internal chamber of the vacuum pump 203, and is disposed substantially in the same manner as the lower part, and is used as a discharge chamber gas. In the space 202 surrounded by the mouse under the 204 in the plasma, the space 202 in the upper body is in the plurality of cylindrical shaped chambers 205, the vacuum chamber -15-200811945 (12) 2 06 and the inner side below the lower electrode 207 The wall is composed of the following inner side wall 215 and a substantially circular opening and closing cover 2 15 . Further, the opening and closing cover 2 15 is formed of a circular plate having a diameter substantially equal to the diameter of the lower electrode 2 17 which is substantially cylindrical, and can be moved up and down by a driving device (not shown). The immediately below the lower electrode 207 of the square is covered by the projection surface of the lower electrode 206 from the top. And 'can be moved to the lower side to seal between the vacuum chamber 206 and the inlet of the vacuum pump 114 to be occluded. In such a configuration, the processing unit 103 of the present embodiment introduces the processing gas from the through hole of the shower plate 212 from above in the discharge chamber 204 after the sample is placed on the mounting surface of the lower electrode 207. . The position of the through hole is a range of the same or larger diameter as that of the circular substrate-shaped sample below. The microwaves from the power source 209 constituting the radio wave source 1 16 are introduced into the discharge cells 204 through the shower plate 212 via the waveguide 208. Further, a solenoid coil 210, 21 1 is disposed at a position surrounded by the outer coil housing 120 above and outside the discharge chamber 204, and a magnetic field is supplied into the discharge chamber 204. The processing gas in the discharge cell 204 is excited by the interaction of the electric field and the magnetic field to form a plasma, and the predetermined high-frequency power is supplied to the conductive member disposed in the lower electrode 207 to form a bias voltage on the surface of the sample. The sample is processed in the state of the potential. Further, while the sample is being processed, the gas and particles in the processing chamber are moved downward in the processing chamber by the operation of the exhaust of the vacuum pump 114 in the lower portion of the vacuum chamber 206, and the axis of the second electrode 207 is centered on the axis. This process creates a less biased flow and adjusts the chamber to a predetermined pressure. 16-(13) (13) 200811945 Further, in the present embodiment, the means for adjusting the amount of exhaust gas by the vacuum pump 114 is disposed outside the path of the gas or particles exhausted from the processing chamber. In other words, as shown in FIG. 2, the introduction path 2 17 is disposed in parallel with the introduction path 2 16 of the processing gas supplied to the discharge chamber 204, and the predetermined gas is introduced into the vacuum pump 1 via the introduction path 2 1 7 . 1 4. In the present embodiment, the flow rate of the predetermined gas supplied to the vacuum pump 1 1 4 is adjusted by adjusting the flow rate controller 1 1 8 of the flow rate of the processing gas supplied to the discharge chamber 204, but it is also possible to have different flow rate adjustments. Device. In the present embodiment, the predetermined gas is a substance which has a small influence on the treatment in the treatment chamber or the member constituting the exhaust passage using an inert gas such as argon or nitrogen. The inert gas whose flow rate is adjusted is introduced into the compression portion of the vacuum pump 141, and the pressure in the processing chamber is adjusted by adjusting the amount of gas per unit time of the gas in the processing chamber of the vacuum pump 114. Fig. 3 is a longitudinal cross-sectional view showing the vacuum pump 1 1 4 under the vacuum container 113 of the processing unit 103 shown in Fig. 2 as an enlarged view. In the figure, the vacuum pump 141 of the present embodiment is coupled to the vacuum vessel 113 by bolts or the like via a connecting flange 313 attached to the lower surface of the vacuum vessel 1 1 3 . The main body of the vacuum pump 114 is provided with a compression portion that is rotationally compressed inside the substantially cylindrical outer casing 301, and a drive portion that rotates the rotation shaft disposed at the center, and has an exhaust port 307 at the lower side, and the discharge is compressed. After the pressure is increased, the gas in the treatment chamber is increased. The upper portion of the outer casing 301 is formed with a turbine portion 301 which is provided with a plurality of blades of a plurality of blades radially arranged around the rotating shaft. (14) (14) 200811945 rotor blade 305 And a plurality of fixed wings 306 having a plurality of blades that are disposed between the rotating blades and radially extending from the outer circumferential side of the outer casing 310 to the rotating shaft side, and are fixed to the outer casing 310 . Further, a screw portion 303 is disposed on the lower side of the turbine portion, and the screw portion 303 flows into the gas discharged from the turbine portion 302 connected to the outlet of the turbine portion 302. The threaded portion 303 is formed by a portion that is fixed to the outer side of the outer casing 301 and that is fixed at a position that is disposed opposite to the rotating shaft with a slight gap therebetween, and the gas passes through the threaded portion. And discharged. The space disposed at the rear end of the screw portion 303 is in communication with the exhaust port 304, and the gas that has risen by the pressure of the turbine portion 312 and the screw portion 303 is exhausted. With such a configuration, gas, particles, and the like flowing into the processing chamber flowing into the exhaust port 3 07 opened and closed by the opening and closing cover 2 1 5 in the lower portion of the vacuum container 1 1 3 are disposed from below the exhaust port 3 07. The suction port 308 of the connected exhaust pump 114 flows into the turbine portion 302 of the compression portion. The turbine portion 312 is a gas or particle that is sent to the lower side by interaction between the blades that are relatively opposed to each other around the rotating shaft, and the surface is alternately arranged via the rotating shaft in the axial direction of the rotating shaft. The rotating rotor 3 04 that rotates around is disposed between the fixed wings 360 that are disposed around the coaxial wings, and is sent to the lower side to be compressed. The exhaust gas from the turbine portion 302 is further moved to the downstream side via the lower thread portion 303, and is discharged from the exhaust port 3 〇4 at a predetermined pressure. The rotating portion of the rotating blade 305 or the threaded portion 303 is coupled to the motor portion 309 via a rotating shaft, and is rotated by the driving of the motor portion 309 to exhaust the inside of the processing chamber. Further, at the lower end portion of the rotating shaft, a magnetic air bearing is disposed for the rotation of the rotating shaft to be -18-(15) 200811945. Further, the suction port 380 of the air pump 1 14 is directly in communication with the exhaust port 307, and is disposed so that the suction port 380 can directly face the processing chamber. In particular, in the present embodiment, the uppermost portion of the turbine portion 306, that is, the inlet wing 310 of the segment of the face suction port 308 is a fixed position wing on the outer casing 301 side, one of the fixed wings 306 The inlet wing 310 is located at the uppermost portion of the compression portion to communicate with the exhaust port 307. The shape of each blade of the inlet wing 31A of the present embodiment is equal to the fixed blade of the other section of the turbine portion 312. The plurality of blades extend radially from the center of the rotating shaft toward the outer circumference of the ring. The inlet wing is not coupled to the uppermost rotating wing 305 of the lower turbine portion 312, and is detachably attached to the inside of the processing chamber. Between the uppermost rotating wing 305 of the turbine portion of the vacuum pump 1 14 and the blade of the fixed wing 306 below it, an inert gas through which the flow rate is adjusted by the mass flow control 1 1 8 is disposed via the gas introduction path 2 1 7 Imported import port 312. The introduction port 312 is connected to the introduction path 2 1 7 which is attached to the thick flange portion which is disposed around the outer circumference of the outer casing 301, and the outer casing 301 is roughly wound. The outer peripheral end of the rotor on the cylindrical shape is provided with a plurality of inert gases introduced into the turbine portion 312 on the rotating shaft of the compression portion, and is sent to the downstream flow by the exhaust operation of the turbine portion 302 together with the gas particles from the processing chamber. The side 'end is exhausted from the exhaust port 304. The amount of gas and particles that are substantially exhausted from the processing chamber is reduced by the introduction of the inert gas. Under the adjustment of the introduction amount of the inert gas, the amount of exhaust gas in the processing chamber is adjusted, and the discharge chamber 204 and the vacuum chamber are adjusted. 205 The segment of the segment that is actually in the pair is the demagnetizer. The diameter of the segment is the most white. -19 (16) (16) The pressure in 200811945 206 will be adjusted. The flow rate adjustment of the inert gas from the inlet port 3 1 2 of the mass flow controller 1 18 of the present embodiment is performed in accordance with the pressure difference between the pressure on the source side of the inert gas and the pressure on the side of the inlet port 31. The pressure on the gas source side is set to a predetermined pressure according to a building such as a clean room in which the plasma processing apparatus is installed, so that the pressure difference can be large, the flow rate can be adjusted with high precision, and the processing accuracy can be improved. Fig. 4 is a top plan view showing the configuration of the vacuum pump shown in Fig. 3; Fig. 4 (a) is a plan view of the vacuum pump 114 as seen from the processing chamber above the exhaust port 307. Fig. 4 (b) is a plan view of the inlet wing 3 10 of the vacuum pump 114 as seen from above. In the present embodiment, during the processing of the sample, the vacuum chamber 206 and the compression portion of the upper portion of the vacuum pump 114 are communicated via the exhaust port 307 and the suction port 308, and the opening of the vacuum container and the opening of the vacuum pump are not provided in the prior art. A valve or the like for adjusting the discharge amount. That is, the exhaust port 307 of the lower portion of the processing chamber is in communication with the inlet wing 310 of the uppermost fixed wing of the compression portion, which is a space directly exposed to the processing chamber. Further, the inlet blade 301 is a plurality of blades 4 1 2 that radially extend on the outer circumferential side of the substantially circular cover 40 1 disposed at a position above the rotation axis, and the outer peripheral ends of the blades are It extends to the outside of the inner circumference of the suction port 308. Further, the gas introduction port 312 is disposed at a plurality of points (four in this example) for the center of the rotation axis of the rotary blade 305 at the center of the figure, and suppresses the in-plane direction of the exhaust gas caused by the introduced gas. Uneven. Further, the inlet vane 310 of the fixed blade of the first stage of the turbine portion is radially arranged from the substantially cylindrical outer casing of the vacuum -20 - (17) (17) 200811945 pump 1 1 4 toward the central axis of the rotation axis. The plurality of wings 402 will be arranged with no gaps between the wings as viewed from above as shown in Fig. 4(b). Fig. 4 (c) is a side view showing the inlet wing 3 10 as seen from the side, and an arrangement pattern of each blade. As shown in the figure, each blade has a predetermined gap in a (horizontal) direction perpendicular to the rotation axis corresponding to the vertical direction on the drawing, and is rotated about the rotation axis and directly below the arrow indicated on the figure. The direction of rotation of the wing 3 05 is assigned to the angular configuration. Each of the blades has an upper upstream end and a lower downstream end for the direction of the rotating shaft or the exhaust gas. This is for the direction of rotation of the rotating blade 305 directly below, and the upstream end is disposed above and the downstream end is disposed below. This is in contrast to the mounting angle of the blades of the rotary wing 305 directly below. When the inlet wing 3 10 is viewed from above the rotating shaft, the upstream end of each blade overlaps with the downstream end of the adjacent blade. Therefore, the turbine portion 302 below the inlet wing 310 is not exposed when projected from above the vacuum pump 1 14 . According to this configuration, the foreign matter existing in the turbine portion 312 can be prevented from entering the processing chamber as the turbine portion 306 having the rotary wing rotates. Further, from the outer casing 301 of the vacuum pump 114, the inlet vane 310 is detachably mounted from the vacuum pump 114 as a unit on the processing chamber side (upper side). Further, it is heated by heat conduction from a heater (not shown) built in the vacuum pump 114 in a state of being attached to the inlet of the vacuum pump 1 14 . By this heating, it is possible to suppress adhesion of a substance such as a raw material from the processing chamber to the surface of the inlet vane 310, and to prevent the foreign matter from adversely affecting the treatment in the processing chamber. In addition, even if such a product is attached, it is not necessary to exchange the vacuum pump 1 1 4 itself for the operation of the indoor maintenance check, and the exchange work may become unnecessary. easily. Fig. 5 is a schematic longitudinal cross-sectional view showing a configuration of a vacuum pump according to a modification of the embodiment of the present invention shown in Fig. 2 or 3. The difference from the embodiment shown in Fig. 2 or 3 is that a plurality of inlet ports for supplying gas are provided on the upstream side and the downstream side of the compression portion of the vacuum pump 114. That is, in the modification shown in Fig. 5, as in the embodiment shown in Fig. 2 or 3, the interval between the uppermost portion of the rotary wing 305 facing the turbine portion 312 and the fixed wing 306 directly below it. The side wall is provided with an introduction port 501 which introduces an inert gas whose flow rate is regulated by the mass flow controller 1 18 . The introduction port 501 is in communication with a gas introduction path 503 which is attached to the flange portion 505. The flange portion 505 has a large thickness in a cross section formed on the outer circumference of the outer casing 301. Further, in the present modification, the flow path of the exhaust gas between the downstream end (discharge end) facing the turbine portion 312 and the inlet of the screw portion 302 is different from the introduction port 501 by introducing an inert gas. The gas introduction port 502. The guide port 502 communicates with the gas introduction path 504 of the other flange portion 506 which is disposed below the flange portion 505 at the lower portion of the outer casing 301. In the present modification, the flow rate of the inert gas flowing through the introduction path 504 is also adjusted by the mass flow controller 1 18 as in the case of the introduction path 503. On the other hand, the supply of the inert gas from the introduction port 520 via the introduction path 506 can also be adjusted by other flow regulating means different from the mass flow controller 1 18 . The gas supplied from the inlet port 501 to the upper turbine portion 312 may be an inert gas or a process gas, in order to make the gas in the processing chamber of the vacuum pump 114 • 22, (19) (19) 200811945, and the displacement of the particles is large. The amplitude is changed and imported. In addition, the gas supplied to the inlet port 502 of the lower portion is an inert gas, and is introduced in order to relatively reduce the amount of gas and particles in the chamber of the vacuum pump 114. The gas introduced from the inlet port 501 on the upstream side of the compression portion of the vacuum pump 114 is a gas which is introduced from the inlet port 502 on the downstream side having a high pressure to greatly change the pressure in the treatment chamber. On the other hand, when the pressure is changed to a small extent, it is carried out by adjusting the introduction of the inert gas from the inlet port 502 on the downstream side. Further, the introduction port 502 may be formed in the thread portion 303. For example, when a plurality of films of different types formed on the surface of the sample are processed under different pressures, the pressure is changed substantially when the film is processed after the upper film is processed, and the pressure is changed from the upstream side. The port 501 supplies a gas to greatly change the pressure in the processing chamber in a shorter period of time, and the micro-adjustment for setting the processing chamber to a predetermined pressure is performed by introduction of gas from the inlet port 502 on the downstream side. . According to this configuration, the pressure in the processing chamber corresponding to the treatment of the different types of membranes can be quickly changed and adjusted, and the efficiency of the treatment can be improved. Fig. 6 is a schematic longitudinal cross-sectional view showing the configuration of a vacuum pump according to another modification of the embodiment of the present invention shown in Fig. 2 or 3. The difference from the embodiment shown in Fig. 2 or 3 is that the turbine portion of the vacuum pump 141 is provided with a portion 601 ° of the gas supplied from the rear end (discharge end) of the screw portion 303. Instead of introducing the inert gas into the turbine portion 302 of the vacuum pump 114, a part of the exhaust gas on the downstream side of the compression portion of the vacuum pump 1 14 is fixed from the uppermost rotary blade 305 to the lower portion. 236 -23· (20) (20) 200811945 Introduce the turbine unit 3 02. The inlet port 610 is connected to the return gas suction port 602 which is opened to the discharge end of the screw portion 303 via the return gas passage 603. In the return gas flow path 603, a flow rate adjuster 604 including a backflow prevention valve and a flow rate adjusting nozzle or valve is disposed to adjust the flow rate of the return gas. The amount of exhaust of the vacuum pump 114 of this modification is adjusted by the flow regulator 604. Further, a filter for removing foreign matter is disposed on the path. In this modification, the pressure in the processing chamber can be adjusted by adjusting the discharge amount of the vacuum pump 1 1 4 by returning the exhaust gas from the compression portion of the vacuum pump 1 14 to the inlet side of the compression portion. Further, in this modification, the inlet vane 310 shown in Fig. 4 is disposed above the turbine portion 302 of the vacuum pump 114, and a valve is not disposed between the suction port 308 and the exhaust port 3 07 at the lower portion of the vacuum vessel 113. The flow rate adjustment means, such as the exhaust from the processing chamber in the vacuum vessel 113, is supplied directly from the suction port 308 of the vacuum pump 114 to the inlet vane 310. In the present modification, it is possible to suppress the formation of foreign matter in the components contained in the exhaust gas by the exhaust gas returning to the turbine portion, and to carry out the pressure in the vacuum container and to perform the treatment in a stable manner. Fig. 7 is a flow chart showing the operation of the plasma processing apparatus of the embodiment of Fig. 1. In the figure, the operation flow for adjusting and processing the pressure in the processing chamber when a plurality of layers disposed on the surface of the sample are laminated under various conditions is described. In this figure, in order to realize the condition for processing the upper film, first, at the start of the processing of the sample, the vacuum pump 1 1 4 is rotationally driven to start the exhaust in the processing chamber (step 70 1 ), and it is confirmed whether the pressure in the processing chamber has arrived. Determine the pressure of-24-(21) (21)200811945 and whether there is a leak (step 7 0 2 ). Then, the sample is conveyed on the lower electrode 2 〇 7 by a transfer device such as a robot arm (not shown), and after the load is placed, the gas for diluting the processing gas is introduced from the shower plate 212 above the discharge chamber 204. At this point, the introduction of such gases is regulated by the mass flow controller 118. At the same time, at the inlet 312 of the vacuum pump 114, the inert gas is supplied while being regulated by the mass flow controller 1 18, and the amount of exhaust gas in the processing chamber of the vacuum pump is adjusted to make the processing chamber The pressure can be adjusted in a manner close to the predetermined enthalpy, and the processing of S TEP 1 is started (step 703). Then, the processing gas is supplied from the shower plate 212 by the mass flow controller 1 18 to adjust the flow rate (step 7〇4), and it is confirmed whether the pressure in the processing chamber is set to a predetermined pressure 値 (step 507). . When it is determined that the pressure has not reached the predetermined enthalpy, the process returns to step 703 to adjust the flow rate of the inert gas by the mass flow controller 1 18 . Further, when it is determined that the arrival is very close to the predetermined range, the process proceeds to step 706 to start the processing of the sample (step 706). After the start of the determination process, the arrival of the end point of the process (step 7〇7;). When it is determined that the end point has not been reached, return to step 7 〇 5 to adjust the pressure in the processing chamber and continue processing. On the other hand, when the end point of the process is judged, the supply of the processing gas is stopped by the mass flow controller 1 1 (step 708). Next, the conditions corresponding to the processing of the film below are changed. In response to this, in the same manner as in step 710, the inside of the processing chamber is evacuated by the operation of the vacuum pump n 4, and the respective processing gases used in STEP are ventilated -25- (22) 200811945 or the product. . When the exhaust gas is exhausted to a predetermined pressure, if it is confirmed that the exhaust gas is exhausted, the inlet port 3 of the vacuum pump 丨4 is 2, and the inert gas is supplied while being adjusted by the mass flow controller, and the vacuum pump ii The amount of exhaust gas in the processing chamber of 4 is adjusted so that the pressure in the processing chamber can be adjusted in a manner close to the predetermined enthalpy, and the processing of STEP 2 is started (step 710). If the introduction amount of the inert gas at this time is different between the pressure conditions in the STEP 1 and STEP 2 processing chambers, the amount of introduction of g in step 703 is different. Further, the processing gas corresponding to the flow rate and composition of STEP 2 is introduced into the processing chamber including the discharge cells 2 to 4 from the shower plate 212 (step 711), and it is confirmed whether or not the pressure in the processing chamber is suitable for the processing of STEP 2 (step 70). 1 2 ). When it is determined that the enthalpy is not appropriate, the process returns to step 7 1 〇, and when it is determined that the appropriate pressure is reached, the process proceeds to step 713 to start the processing of the lower film (step 7 1 3 ). In this case, similarly to the step 706, the lower electrode 2 〇 7 is supplied with the predetermined tube frequency power. The bias potential is formed on the surface of the sample for processing. Further, during the treatment, the temperature of the refrigerant flowing through the refrigerant passage in the lower electrode 207 or the pressure of the heat transfer gas such as nitrogen supplied between the sample and the sample mounting surface of the lower electrode 207 is adjusted, and the sample is adjusted while adjusting the sample. The temperature is processed on one side. It is judged whether or not the end point of the process is reached after the start of the process (step 714), and when it is judged that the end point has not been reached, the process returns to step 7U' while the pressure in the process chamber is adjusted while the process is continued. When the determination process reaches the end point, the process proceeds to step 715, and the supply of the processing gas is stopped to the processing chamber, and the process is stopped. Later, -26 - (23) 200811945 Repeat the above steps when there is a film that should be reprocessed. In the present embodiment, the adjustment of the pressure in the processing chamber in the above step 7〇3 or step 710 is performed by introducing a gas to the compression portion of the rotary-driven vacuum pump 1 14 to adjust the amount of exhaust gas from the processing chamber. In order to change the pressure in the processing chamber from STEP1 to TEP2 more quickly, the step 709 of removing the processing gas for STEP 1 from the processing chamber is not performed, and the process proceeds to step 710. In the example of Fig. 7, the configuration of the vacuum pump 114 is based on the configuration of Fig. 2 or 3, but the configuration of the vacuum crucible 114 shown in Fig. 6 can be applied. Further, as shown in Fig. 5, an inlet for supplying an inert gas is disposed at a plurality of points on the upstream side and the downstream side of the compression portion. In step 710, when the pressure in the processing chamber fluctuates greatly, first, the inert gas is introduced from the inlet 501, and the displacement of the vacuum pump 1 14 is greatly changed to make the amount of the gas close to the target. After (pressure), the introduction of the inert gas from the inlet 502 is switched, and the amount of the exhaust gas can be finely adjusted in order to stabilize the pressure at which the target is formed. • As described above, with the above embodiment, the pressure in the treatment chamber can be more stabilized, and the efficiency of the treatment can be improved. Further, it is possible to suppress the foreign matter from being carried out from the vacuum pump to the processing chamber, thereby improving the yield of the treatment. In addition, the time for maintenance or inspection is reduced, and the operation rate of the plasma processing apparatus is increased. Brief Description of the Drawings Fig. 1 is a schematic view showing the configuration of a plasma processing apparatus according to an embodiment of the present invention. -27- (24) (24) 200811945 Fig. 2 is a schematic cross-sectional view showing the configuration of a processing unit of the embodiment shown in Fig. 1. Fig. 3 is a longitudinal cross-sectional view showing the vacuum pump on the lower side of the vacuum container of the processing unit shown in Fig. 2 as a center. Fig. 4 is a schematic top view showing the configuration of the vacuum pump shown in Fig. 3; Fig. 5 is a schematic longitudinal cross-sectional view showing a configuration of a vacuum pump according to a modification of the embodiment of the present invention shown in Fig. 2 or 3. Fig. 6 is a schematic longitudinal cross-sectional view showing the configuration of a vacuum pump according to another modification of the embodiment of the present invention shown in Fig. 2 or 3. Fig. 7 is a flow chart showing the operation of the plasma processing apparatus of the embodiment of Fig. 1. [Explanation of main component symbols] 1 〇〇: plasma processing device, 1 〇1: atmospheric side block, 〇2 ··processing block, 103,1〇3, processing unit, 105 ··transport unit, 1〇 6: frame, 107, 1〇8 ·· cassette, 109,109,: lock chamber, ηι: vacuum transfer chamber, 113, 113, vacuum container, 114: vacuum pump, n5, n5, · support station, 1 1 6,1 1 6,: Radio source, 1 18,1 1 8: Mass flow controller, DO, 120': Coil housing, 121, 121': Lifting device. -28-