CN112562762A - Method and system for acquiring WL threshold voltage distribution and related components - Google Patents
Method and system for acquiring WL threshold voltage distribution and related components Download PDFInfo
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Abstract
The application discloses a method, a system, a device and a readable storage medium for acquiring WL threshold voltage distribution, which are applied to NAND FLASH, and the method comprises the following steps: determining a voltage range to be measured according to the ideal voltage distribution relation of the threshold voltage; determining a plurality of voltage points to be measured in a voltage range to be measured; setting a read offset value of each voltage point to be detected, and reading original data of the linkage page under the read offset value; and determining the actual voltage distribution relation in the voltage range to be measured according to the original data of all the linkage pages. According to the method and the device, corresponding read offset values are set for different voltage points to be detected, original data of linkage pages of the voltage points to be detected are obtained and analyzed, the actual voltage distribution relation in the whole voltage range to be detected can be obtained, the method and the device are independent of specific data, can be suitable for any environment scene and any type of input data, and are suitable for obviously expanding the applicable scene.
Description
Technical Field
The invention relates to the field of memory configuration, in particular to a method and a system for acquiring WL threshold voltage distribution and related components.
Background
The basic principle that the NAND Flash can store a plurality of pages on one wl (word line) is to accurately control the voltage of one Cell in a plurality of states to represent different data states of the plurality of pages. The threshold voltage distribution of all cells of a WL directly influences the turnover condition of each page. In the use process of the NAND Flash, the threshold voltage distribution changes due to factors such as Read disturb, Data Retention, and high and low temperature environments, which causes the error rate of reading according to the original threshold voltage distribution to increase. Therefore, how to correctly obtain threshold voltage distributions of WLs of the NAND Flash in different states is a key for studying related technologies of solid-state storage.
In the prior art, specific data needs to be written in when threshold voltage distribution is obtained, corresponding readoffset is carried out to obtain bit-flipping data, and the bit-flipping data is processed and fitted to analyze the threshold voltage distribution.
Therefore, how to provide a solution to the above technical problems is a problem to be solved by those skilled in the art.
Disclosure of Invention
Accordingly, the present invention is directed to a method, system and related components for obtaining a distribution of WL threshold voltages. The specific scheme is as follows:
a method for acquiring a WL threshold voltage distribution, applied to NAND FLASH, includes:
determining a voltage range to be measured according to the ideal voltage distribution relation of the threshold voltage;
determining a plurality of voltage points to be measured in the voltage range to be measured;
setting a read offset value of each voltage point to be detected, and reading original data of the linkage page under the read offset value;
and determining the actual voltage distribution relation in the voltage range to be measured according to the original data of all the linkage pages.
Preferably, the process of determining the voltage range to be measured according to the ideal voltage distribution relationship of the threshold voltage includes:
and determining the voltage range to be measured corresponding to each ideal threshold voltage point by taking each ideal threshold voltage point in the ideal voltage distribution relation of the threshold voltage as a center.
Preferably, the acquiring method further includes:
and combining the actual voltage distribution relations in the voltage range to be measured corresponding to all the ideal threshold voltage points to obtain the actual voltage distribution relation of the threshold voltage.
Preferably, the process of determining the voltage range to be measured corresponding to each ideal threshold voltage point by taking each ideal threshold voltage point in the ideal voltage distribution relationship of the threshold voltage as a center includes:
determining a voltage range to be measured corresponding to each ideal threshold voltage point by taking each ideal threshold voltage point in an ideal voltage distribution relation of the threshold voltage as a center and taking a calculated voltage distance as the width of the voltage range to be measured;
the calculated voltage distance is specifically a product of a distance between every two ideal threshold voltage points and a redundancy coefficient.
Preferably, the process of determining the voltage range to be measured corresponding to each ideal threshold voltage point by taking each ideal threshold voltage point in the ideal voltage distribution relationship of the threshold voltage as a center includes:
and taking each ideal threshold voltage point in the ideal voltage distribution relation of the threshold voltage as a center, moving the unit voltage distances of a preset number leftwards as a left end point, moving the unit voltage distances of the preset number rightwards as a right end point, and determining the voltage range to be measured corresponding to each ideal threshold voltage point.
Preferably, before the combining the actual voltage distribution relations within the voltage range to be measured corresponding to all the ideal threshold voltage points to obtain the actual voltage distribution relations of the threshold voltages, the method further includes:
and determining the actual voltage distribution relation of the overlapping range of every two voltage ranges to be measured.
Preferably, the process of determining the actual voltage distribution relationship of the overlapping range of every two voltage ranges to be measured includes:
dividing the overlapping range of every two voltage ranges to be measured into a first overlapping range and a second overlapping range from a midpoint;
determining the actual voltage distribution relation of the voltage range to be measured, the center of which is closer to the first overlapping range, as the actual voltage distribution relation of the first overlapping range;
and determining the actual voltage distribution relation of the voltage range to be measured, the center of which is closer to the second overlapping range, as the actual voltage distribution relation of the second overlapping range.
Correspondingly, the application also discloses a system for acquiring the distribution of the WL threshold voltage, which is applied to NAND FLASH and comprises the following steps:
the first determining module is used for determining the voltage range to be measured according to the ideal voltage distribution relation of the threshold voltage;
the second determining module is used for determining a plurality of voltage points to be measured in the voltage range to be measured;
the parameter setting module is used for setting a read offset value of each voltage point to be measured and reading original data of the linkage page under the read offset value;
and the data analysis module is used for determining the actual voltage distribution relation in the voltage range to be detected according to the original data of all the linkage pages.
Correspondingly, the application also discloses a device for acquiring the distribution of the WL threshold voltage, which is applied to NAND FLASH and comprises:
a memory for storing a computer program;
a processor for implementing the steps of the method of obtaining a distribution of WL threshold voltages as described in any one of the preceding paragraphs when said computer program is executed.
Accordingly, the present application also discloses a readable storage medium, applied to NAND FLASH, having a computer program stored thereon, which when executed by a processor, implements the steps of the method for obtaining the WL threshold voltage distribution according to any one of the above.
The application discloses a method for acquiring WL threshold voltage distribution, which is applied to NAND FLASH and comprises the following steps: determining a voltage range to be measured according to the ideal voltage distribution relation of the threshold voltage; determining a plurality of voltage points to be measured in the voltage range to be measured; setting a read offset value of each voltage point to be detected, and reading original data of the linkage page under the read offset value; and determining the actual voltage distribution relation in the voltage range to be measured according to the original data of all the linkage pages. According to the method and the device, corresponding read offset values are set for different voltage points to be detected, original data of linkage pages of the voltage points to be detected are obtained, the linkage pages are analyzed, the actual voltage distribution relation in the whole voltage range to be detected can be obtained, the linkage pages do not depend on specific data, the method and the device are applicable to any environment scene and any type of input data, and the applicable scene is obviously enlarged.
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In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a flowchart illustrating a method for obtaining a distribution of WL threshold voltages according to an embodiment of the present invention;
FIG. 2 is a structural distribution diagram of a voltage distribution relationship according to an embodiment of the present invention;
FIG. 3 is a distribution diagram of an apparatus for obtaining a distribution of WL threshold voltages according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the prior art, specific data needs to be written in when threshold voltage distribution is obtained, corresponding readoffset is carried out to obtain bit-flipping data, and the bit-flipping data is processed and fitted to analyze the threshold voltage distribution.
According to the method and the device, corresponding read offset values are set for different voltage points to be detected, original data of linkage pages of the voltage points to be detected are obtained, the linkage pages are analyzed, the actual voltage distribution relation in the whole voltage range to be detected can be obtained, the linkage pages do not depend on specific data, the method and the device are applicable to any environment scene and any type of input data, and the applicable scene is obviously enlarged.
The embodiment of the invention discloses a method for acquiring WL threshold voltage distribution, which is applied to NAND FLASH and shown in figure 1, and comprises the following steps:
s1: determining a voltage range to be measured according to the ideal voltage distribution relation of the threshold voltage;
s2: determining a plurality of voltage points to be measured in a voltage range to be measured;
s3: setting a read offset value of each voltage point to be detected, and reading original data of the linkage page under the read offset value;
s4: and determining the actual voltage distribution relation in the voltage range to be measured according to the original data of all the linkage pages.
It can be understood that the ideal voltage distribution relationship in this embodiment refers to a voltage distribution relationship obtained by the WL at the time of factory shipment or in other test environments corresponding to a specific test environment, as shown in fig. 2, the essence of the voltage distribution relationship is a relationship between the voltage V and the analog N of the corresponding cell in the WL, and as factors such as Read disturb, Data Retention, high and low temperature environments and the like change, the original voltage distribution relationship is no longer applicable, and if the WL is still Read according to the original voltage distribution relationship, many errors occur, so that the actual voltage distribution relationship in the current environment needs to be determined again. The original ideal voltage distribution relation can be used as a voltage range reference during retesting to determine a new voltage range to be tested.
Specifically, one block of NAND FLASH includes a plurality of WLs, one WL includes a plurality of cells, each cell includes a plurality of pages, different voltage points can influence data of a certain page in the cell, and the page is called a linkage page, so in this embodiment, a linkage page under different voltage points to be measured is selected as a main judgment basis, the state of the cell can be determined from the original data thereof, and the actual voltage distribution relationship in the whole voltage range to be measured can be known by analyzing the original data corresponding to each voltage point to be measured in all voltage ranges to be measured. Here, the raw data, that is, raw data is data read directly from NAND FLASH, and the actual voltage distribution relationship of WL can be reflected more truly without operations such as error correction.
It can be understood that, in order to obtain a more accurate and finer voltage distribution relationship, after the voltage range to be measured is determined, a larger number of voltage points to be measured can be selected within the range.
The application discloses a method for acquiring WL threshold voltage distribution, which comprises the following steps: determining a voltage range to be measured according to the ideal voltage distribution relation of the threshold voltage; determining a plurality of voltage points to be measured in the voltage range to be measured; setting a read offset value of each voltage point to be detected, and reading original data of the linkage page under the read offset value; and determining the actual voltage distribution relation in the voltage range to be measured according to the original data of all the linkage pages. According to the method and the device, corresponding read offset values are set for different voltage points to be detected, original data of linkage pages of the voltage points to be detected are obtained, the linkage pages are analyzed, the actual voltage distribution relation in the whole voltage range to be detected can be obtained, the linkage pages do not depend on specific data, the method and the device are applicable to any environment scene and any type of input data, and the applicable scene is obviously enlarged.
The embodiment of the invention discloses a specific method for acquiring WL threshold voltage distribution, and compared with the previous embodiment, the embodiment further explains and optimizes the technical scheme.
Specifically, the process of determining the voltage range to be measured according to the ideal voltage distribution relation of the threshold voltage includes:
and determining the voltage range to be measured corresponding to each ideal threshold voltage point by taking each ideal threshold voltage point in the ideal voltage distribution relation of the threshold voltage as a center.
The ideal threshold voltage point is specifically a voltage value corresponding to a peak top of the distribution diagram in the ideal voltage distribution relationship. In NAND FLASH of different types, threshold voltage points of a WL are different in number, for example, TLC NAND FLASH, and a WL has 7 threshold voltage points, and the corresponding voltage range to be measured can be divided into L0-L6 as shown in fig. 2.
Further, the process of determining the voltage range to be measured corresponding to each ideal threshold voltage point by taking each ideal threshold voltage point in the ideal voltage distribution relation of the threshold voltage as a center includes:
determining a voltage range to be measured corresponding to each ideal threshold voltage point by taking each ideal threshold voltage point in the ideal voltage distribution relation of the threshold voltage as a center and taking the calculated voltage distance as the width of the voltage range to be measured;
the calculated voltage distance is specifically the product of the distance between each two ideal threshold voltage points and the redundancy factor.
For example, if a certain ideal threshold voltage point is V1, the distance between every two ideal threshold voltage points is L, and the redundancy coefficient is a natural number a greater than 1, the voltage range to be measured of the ideal threshold voltage point V1 is: (V1-1/2 aL, V1+1/2 aL). In addition, the distribution of ideal threshold voltage points is not necessarily completely uniform, so two ideal threshold voltage points V2 and V3 that are adjacent to the ideal threshold voltage point V1 before and after may be selected as an example mark, the voltage range to be measured of the ideal threshold voltage point V1 is determined to be (V2, V3), further, in consideration of setting a read offset value for each ideal threshold voltage point for subsequent processing, a natural number b smaller than 1 may be set as a reduction coefficient, V1-V2 is the voltage range to be measured on the left side of V1, V3-V1 is the voltage range to be measured on the right side of V1, and the voltage range to be measured of the ideal threshold voltage point V1 is determined to be (V1-b (V1-V2), V1+ b (V3-V1)).
In addition to the above method, the process of determining the voltage range to be measured corresponding to each ideal threshold voltage point by centering on each ideal threshold voltage point in the ideal voltage distribution relationship of the threshold voltage may further include:
and taking each ideal threshold voltage point in the ideal voltage distribution relation of the threshold voltage as a center, moving the ideal threshold voltage points to the left by a preset number of unit voltage distances as a left end point, moving the ideal threshold voltage points to the right by a preset number of unit voltage distances as a right end point, and determining the voltage range to be measured corresponding to each ideal threshold voltage point.
For example, if a certain ideal threshold voltage point is V1, the unit voltage distance is V0, and the preset number is c, the voltage range to be measured of the ideal threshold voltage point V1 is (V1-cv0, V1+ cv 0). The scheme is more convenient and fast when determining the voltage points to be measured, the voltage points separated by one or N unit voltage distances can be directly used as the voltage points to be measured, and when setting and reading the original data of the linkage page for each voltage point to be measured, the method can be directly carried out in a mode that the voltage points to be measured gradually reach the left end point to the right end point of the voltage range to be measured.
It is understood that the voltage range to be measured for each ideal threshold voltage point can be determined by other rules besides the above method, and is not limited herein.
Further, the obtaining method in this embodiment further includes:
and combining the actual voltage distribution relations in the voltage range to be measured corresponding to all the ideal threshold voltage points to obtain the actual voltage distribution relation of the threshold voltage.
It can be understood that the actual voltage distribution relationship obtained in the above is a distribution relationship corresponding to each ideal threshold voltage point, and only a part of WLs can be represented, so that the actual voltage distribution relationships of all the ideal threshold voltage points need to be combined to obtain the actual voltage distribution relationship of the whole threshold voltage.
It can be understood that, in the merging process, because there is a possibility that the voltage ranges to be measured of different ideal threshold voltage points overlap, there are two sets of data in the overlapping portion, and it is necessary to further determine final data, that is, to merge actual voltage distribution relationships in the voltage range to be measured corresponding to all the ideal threshold voltage points, and before obtaining the actual voltage distribution relationship of the threshold voltage, the method further includes:
and determining the actual voltage distribution relation of the overlapping range of every two voltage ranges to be measured.
Further, the process of determining the actual voltage distribution relationship of the overlapping range of every two voltage ranges to be measured includes:
dividing the overlapping range of every two voltage ranges to be measured into a first overlapping range and a second overlapping range from a midpoint;
determining the actual voltage distribution relation of the voltage range to be measured with the center closer to the first overlapping range as the actual voltage distribution relation of the first overlapping range;
and determining the actual voltage distribution relation of the voltage range to be measured with the center closer to the second overlapping range as the actual voltage distribution relation of the second overlapping range.
It can be understood that when two voltage ranges to be measured, which take V1 and V3 as the centers, overlap, the overlapping portion is (V4, V5), the size relationship of the voltage points is V1< V4< V5< V3, at this time, the first overlapping range is (V4, (V5-V4)/2), the second overlapping range is ((V5-V4)/2, V5), the center of the first overlapping range closer to the first overlapping range is V1, so that the actual voltage distribution relationship corresponding to V1 is selected as the actual voltage distribution relationship of the first overlapping range, and similarly, the actual voltage distribution relationship corresponding to V3 is selected as the actual voltage distribution relationship of the second overlapping range.
Besides this method, two sets of actual voltage distribution relations in the overlap range may be averaged to obtain the final actual voltage distribution relation in the overlap range, and other methods may be selected to determine the final data, which is not limited herein.
Correspondingly, the embodiment of the present application further discloses a system for acquiring a WL threshold voltage distribution, which is applied to NAND FLASH, and is shown in fig. 3, and includes:
the first determining module 1 determines a voltage range to be measured according to an ideal voltage distribution relation of threshold voltage;
the second determining module 2 is used for determining a plurality of voltage points to be measured in a voltage range to be measured;
the parameter setting module 3 is used for setting a read offset value of each voltage point to be measured and reading original data of the linkage page under the read offset value;
and the data analysis module 4 is used for determining the actual voltage distribution relation in the voltage range to be detected according to the original data of all the linkage pages.
According to the method and the device, corresponding read offset values are set for different voltage points to be detected, original data of linkage pages of the voltage points to be detected are obtained, the linkage pages are analyzed, the actual voltage distribution relation in the whole voltage range to be detected can be obtained, the linkage pages do not depend on specific data, the method and the device are applicable to any environment scene and any type of input data, and the applicable scene is obviously enlarged.
In some specific embodiments, the first determining module 1 is specifically configured to:
and determining the voltage range to be measured corresponding to each ideal threshold voltage point by taking each ideal threshold voltage point in the ideal voltage distribution relation of the threshold voltage as a center.
In some specific embodiments, the obtaining system may further include a merging module configured to:
and combining the actual voltage distribution relations in the voltage range to be measured corresponding to all the ideal threshold voltage points to obtain the actual voltage distribution relation of the threshold voltage.
In some specific embodiments, the first determining module 1 is specifically configured to:
determining a voltage range to be measured corresponding to each ideal threshold voltage point by taking each ideal threshold voltage point in an ideal voltage distribution relation of the threshold voltage as a center and taking a calculated voltage distance as the width of the voltage range to be measured;
the calculated voltage distance is specifically a product of a distance between every two ideal threshold voltage points and a redundancy coefficient.
In some specific embodiments, the first determining module 1 is specifically configured to:
and taking each ideal threshold voltage point in the ideal voltage distribution relation of the threshold voltage as a center, moving the unit voltage distances of a preset number leftwards as a left end point, moving the unit voltage distances of the preset number rightwards as a right end point, and determining the voltage range to be measured corresponding to each ideal threshold voltage point.
In some specific embodiments, the merging module is further configured to, before merging the actual voltage distribution relationships in the voltage range to be measured corresponding to all the ideal threshold voltage points to obtain the actual voltage distribution relationships of the threshold voltages:
and determining the actual voltage distribution relation of the overlapping range of every two voltage ranges to be measured.
In some specific embodiments, the merging module is configured to:
dividing the overlapping range of every two voltage ranges to be measured into a first overlapping range and a second overlapping range from a midpoint;
determining the actual voltage distribution relation of the voltage range to be measured, the center of which is closer to the first overlapping range, as the actual voltage distribution relation of the first overlapping range;
and determining the actual voltage distribution relation of the voltage range to be measured, the center of which is closer to the second overlapping range, as the actual voltage distribution relation of the second overlapping range.
Correspondingly, the embodiment of the present application further discloses an apparatus for obtaining the distribution of WL threshold voltages, which is applied to NAND FLASH, and includes:
a memory for storing a computer program;
a processor for implementing the steps of the method of obtaining a distribution of WL threshold voltages as described in any one of the preceding paragraphs when said computer program is executed.
Accordingly, the present application further discloses a readable storage medium, applied to NAND FLASH, where the readable storage medium stores thereon a computer program, and the computer program, when executed by a processor, implements the steps of the method for obtaining the WL threshold voltage distribution according to any one of the above.
In this embodiment, details of the method for obtaining the WL threshold voltage distribution may refer to the related description in the above embodiments, and are not repeated herein.
The apparatus for obtaining the WL threshold voltage distribution and the readable storage medium in this embodiment both have the same beneficial effects as the method for obtaining the WL threshold voltage distribution in the above embodiment, and are not described herein again.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The method, the system and the related components for acquiring the WL threshold voltage distribution provided by the present invention are described in detail above, and the principle and the implementation manner of the present invention are explained in this document by applying specific examples, and the description of the above examples is only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (10)
1. A method for obtaining a WL threshold voltage distribution, applied to NAND FLASH, includes:
determining a voltage range to be measured according to the ideal voltage distribution relation of the threshold voltage;
determining a plurality of voltage points to be measured in the voltage range to be measured;
setting a read offset value of each voltage point to be detected, and reading original data of the linkage page under the read offset value;
and determining the actual voltage distribution relation in the voltage range to be measured according to the original data of all the linkage pages.
2. The method according to claim 1, wherein the determining the voltage range to be measured according to the ideal voltage distribution relationship of the threshold voltage includes:
and determining the voltage range to be measured corresponding to each ideal threshold voltage point by taking each ideal threshold voltage point in the ideal voltage distribution relation of the threshold voltage as a center.
3. The acquisition method according to claim 2, further comprising:
and combining the actual voltage distribution relations in the voltage range to be measured corresponding to all the ideal threshold voltage points to obtain the actual voltage distribution relation of the threshold voltage.
4. The method according to claim 3, wherein the step of determining the voltage range to be measured corresponding to each ideal threshold voltage point by centering on each ideal threshold voltage point in the ideal voltage distribution relationship of the threshold voltage includes:
determining a voltage range to be measured corresponding to each ideal threshold voltage point by taking each ideal threshold voltage point in an ideal voltage distribution relation of the threshold voltage as a center and taking a calculated voltage distance as the width of the voltage range to be measured;
the calculated voltage distance is specifically a product of a distance between every two ideal threshold voltage points and a redundancy coefficient.
5. The method according to claim 3, wherein the step of determining the voltage range to be measured corresponding to each ideal threshold voltage point by centering on each ideal threshold voltage point in the ideal voltage distribution relationship of the threshold voltage includes:
and taking each ideal threshold voltage point in the ideal voltage distribution relation of the threshold voltage as a center, moving the unit voltage distances of a preset number leftwards as a left end point, moving the unit voltage distances of the preset number rightwards as a right end point, and determining the voltage range to be measured corresponding to each ideal threshold voltage point.
6. The obtaining method according to claim 4 or 5, wherein before the combining the actual voltage distribution relations in the voltage range to be measured corresponding to all the ideal threshold voltage points to obtain the actual voltage distribution relations of the threshold voltages, the method further comprises:
and determining the actual voltage distribution relation of the overlapping range of every two voltage ranges to be measured.
7. The method according to claim 6, wherein the step of determining the actual voltage distribution relationship of the overlapping range of every two voltage ranges to be measured comprises:
dividing the overlapping range of every two voltage ranges to be measured into a first overlapping range and a second overlapping range from a midpoint;
determining the actual voltage distribution relation of the voltage range to be measured, the center of which is closer to the first overlapping range, as the actual voltage distribution relation of the first overlapping range;
and determining the actual voltage distribution relation of the voltage range to be measured, the center of which is closer to the second overlapping range, as the actual voltage distribution relation of the second overlapping range.
8. A system for acquiring a WL threshold voltage distribution, applied to NAND FLASH, includes:
the first determining module is used for determining the voltage range to be measured according to the ideal voltage distribution relation of the threshold voltage;
the second determining module is used for determining a plurality of voltage points to be measured in the voltage range to be measured;
the parameter setting module is used for setting a read offset value of each voltage point to be measured and reading original data of the linkage page under the read offset value;
and the data analysis module is used for determining the actual voltage distribution relation in the voltage range to be detected according to the original data of all the linkage pages.
9. An apparatus for obtaining a distribution of WL threshold voltages, applied to NAND FLASH, comprising:
a memory for storing a computer program;
a processor for implementing the steps of the method of obtaining a WL threshold voltage distribution according to any one of claims 1 to 7 when executing the computer program.
10. A readable storage medium, having stored thereon a computer program which, when being executed by a processor, carries out the steps of the method of acquiring a WL threshold voltage distribution according to any one of claims 1 to 7.
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