CN108958658B - Target data acquisition method and device - Google Patents
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Abstract
The embodiment of the invention provides a method and a device for acquiring target data, which are used for improving the stability of data reading and writing of a solid-state storage device. The method comprises the following steps: simulating, at a development platform, a running state of a target solid-state storage device, the running state including at least one of a read operation, a write operation, or an erase operation on the target solid-state storage device; performing a write operation on the target solid-state storage device at a first ambient temperature to determine a first solid-state storage device that fills disk capacity; setting different condition variables for the first solid-state storage device; acquiring a plurality of BER data corresponding to the operating state of the first solid-state storage device under the different condition variables, wherein the BER data have association relations with the different condition variables and the different operating states; and determining the BER data with the minimum value in the plurality of BER data as target BER data.
Description
Technical Field
The present invention relates to the field of storage, and in particular, to a method and an apparatus for acquiring target data.
Background
With the advent of the cloud computing era, the development of solid-state storage is rapidly advanced, and currently, a solid-state hard disk based on 3D TLC (Triple Level Cell) has become an indispensable member in the storage field. The consumption-level solid state disk has small capacity and low transmission bandwidth, and compared with the enterprise-level solid state disk, the consumption-level solid state disk has low requirement on the stability of data, but has higher requirement on the data determined by different storage medium characteristics relative to the mechanical hard disk.
The data stability of the solid state disk is mainly determined by the characteristics of the flash memory, and if the solid state disk is not effectively managed, unpredictable problems can occur, for example, data loss can occur when the solid state disk is not read and written for a long time, and data errors can be caused when the number of times of reading and writing of the same data block is too large.
In order to ensure the read/write stability of the solid state disk, a fixed offset voltage is usually preset. Because the read-write data performance of the flash memories in different environments has differences, the setting of the fixed offset voltage often cannot play a role in the read-write stability of the solid state disk.
Disclosure of Invention
The embodiment of the invention provides a method and a device for acquiring target data, which are used for improving the read-write stability of solid-state storage equipment.
A first aspect of an embodiment of the present invention provides a method for acquiring target data, including:
simulating, at a development platform, a running state of a target solid-state storage device, the running state including at least one of a read operation, a write operation, or an erase operation on the target solid-state storage device;
performing a write operation on the target solid-state storage device at a first ambient temperature to determine a first solid-state storage device that fills disk capacity;
setting different condition variables for the first solid-state storage device;
acquiring a plurality of BER data corresponding to the operating state of the first solid-state storage device under the different condition variables, wherein the BER data have association relations with the different condition variables and the different operating states;
and determining the BER data with the minimum value in the plurality of BER data as target BER data.
Optionally, the setting of different condition variables for the first solid-state storage device includes:
under the environment of second ambient temperature, it is right to use the cycle of presetting for a long time as the cycle first solid-state device carries out first reading, until reaching and predetermineeing first preset condition in advance, second ambient temperature with first ambient temperature is the ambient temperature of difference, just second ambient temperature is greater than first ambient temperature.
Optionally, the setting of different condition variables for the first solid-state storage device includes:
and performing continuous reading operation and random reading operation on the first solid-state storage device at the first environment temperature until the sum of the times of the continuous reading operation and the random reading operation reaches a first preset value.
Optionally, the setting of different condition variables for the first solid-state storage device includes:
and performing second reading operation and erasing operation on the first solid-state storage device at the first ambient temperature until the number of times of erasing operation reaches a second preset value, wherein the second preset value is a different preset value from the first preset value.
Optionally, the setting of different condition variables for the target solid-state storage device includes:
setting an environment temperature set, wherein the number of environment temperatures in the environment temperature set is a third preset value, the environment temperature set does not include the first environment temperature, and the third preset value and the second preset value are different preset values;
performing a third read operation on the first solid-state storage device at each ambient temperature in the set of ambient temperatures.
A second aspect of the embodiments of the present invention provides an apparatus for acquiring target data, including:
the simulation unit is used for simulating the running state of a target solid-state storage device in a development platform, wherein the running state comprises at least one of reading operation, writing operation or erasing operation of the target solid-state storage device;
the processing unit is used for performing write operation on the target solid-state storage device at a first environment temperature so as to determine a first solid-state storage device which fills the capacity of a disk;
the setting unit is used for setting different condition variables for the first solid-state storage device;
an obtaining unit, configured to obtain multiple bit error rate BER data corresponding to operating states of the first solid-state storage device under the different condition variables, where the multiple bit error rate BER data have association relations with the different condition variables and the different operating states;
a determining unit configured to determine a minimum BER data among the plurality of BER data as target BER data.
Optionally, the setting unit is specifically configured to:
under the environment of second ambient temperature, it is right to use the cycle of presetting for a long time as the cycle first solid-state device carries out first reading, until reaching and predetermineeing first preset condition in advance, second ambient temperature with first ambient temperature is the ambient temperature of difference, just second ambient temperature is greater than first ambient temperature.
Optionally, the setting unit is further specifically configured to:
and performing continuous reading operation and random reading operation on the first solid-state storage device at the first environment temperature until the sum of the times of the continuous reading operation and the random reading operation reaches a first preset value.
Optionally, the setting unit is further specifically configured to:
and performing second reading operation and erasing operation on the first solid-state storage device at the first ambient temperature until the number of times of erasing operation reaches a second preset value, wherein the second preset value is a different preset value from the first preset value.
Optionally, the setting unit is further specifically configured to:
setting an environment temperature set, wherein the number of environment temperatures in the environment temperature set is a third preset value, the environment temperature set does not include the first environment temperature, and the third preset value and the second preset value are different preset values;
performing a third read operation on the first solid-state storage device at each ambient temperature in the set of ambient temperatures.
A third aspect of embodiments of the present invention provides a processor for executing a computer program, where the computer program executes to perform the steps of the method according to the above aspects.
A fourth aspect of embodiments of the present invention provides a computer-readable storage medium having a computer program stored thereon, characterized in that: the computer program, when executed by a processor, performs the steps of the method of the aspects described above.
According to the technical scheme, in the embodiment of the invention, four factors influencing the data stability of the Nand Flash are considered, the condition variable for controlling each factor is constructed, the optimal BER data is obtained by analyzing each factor and is applied to the solid-state storage device, and compared with the prior art in which a fixed offset voltage is set, the stability of data reading and writing of the solid-state storage device can be improved.
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Fig. 1 is a schematic diagram of an embodiment of a target data obtaining method according to an embodiment of the present invention;
fig. 2 is a schematic diagram of an embodiment of an apparatus for acquiring target data according to an embodiment of the present invention;
fig. 3 is a schematic hardware structure diagram of an apparatus for acquiring target data according to an embodiment of the present invention;
fig. 4 is a schematic diagram of an embodiment of an electronic device according to an embodiment of the present invention;
fig. 5 is a schematic diagram of an embodiment of a computer-readable storage medium according to an embodiment of the present invention.
Detailed Description
The embodiment of the invention provides a target data acquisition method and a target data acquisition device, which are used for improving the stability of reading and writing data of a solid-state storage device.
The terms "first," "second," "third," "fourth," and the like in the description and in the claims, as well as in the drawings, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It will be appreciated that the data so used may be interchanged under appropriate circumstances such that the embodiments described herein may be practiced otherwise than as specifically illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The method is described aiming at the storage and error correction of data in a solid-state storage product, a self-contained solid-state hard disk development platform is adopted as an operating environment, a large amount of read-write simulation is carried out aiming at a 3D TLC flash memory, and the optimal offset voltage is obtained by analyzing a simulation result and is applied to the product.
The present invention considers four conditions: firstly, the duration of data in the same block is defined as the time of Retentivity (RT); the number of times of read operations in the same block is defined as Read Disturb (RD); thirdly, the abrasion times of the block is defined as PE; and fourthly, the change of the ambient temperature is defined as TC, and the four conditions are taken as condition variables to be controlled independently.
According to the characteristics of Nand Flash, the optimal offset voltage is finally obtained through four-dimensional analysis of RT, RD, PE and TC, wherein RT refers to the duration of the Nand Flash under the power-on condition, the duration is counted in a timer counting mode, and corresponding simulation threshold values (namely the offset voltage) are formulated through analyzing the data retention conditions in different time periods; RD means that the number of read operations for the same physical block affects the Bit Error Rate (BER) and Frame Error Rate (FER) of subsequent read operations, and the effect of subsequent read operations is analyzed by making a large number of read operations to accumulate; the PE dimension means that the electron-retaining capability of the nand flash is gradually weakened along with the increase of the erasing operation frequency, and the data storage effect under different PE conditions is different.
The following describes a method for acquiring target data from the perspective of a target data acquiring device, where the target data acquiring device may be a server or a service unit in the server, and is not particularly limited.
Referring to fig. 1, fig. 1 is a schematic diagram of an embodiment of a method for acquiring target data according to an embodiment of the present invention, including:
101. and simulating the running state of the target solid-state storage device on the development platform.
In this embodiment, when it is required to set the offset voltage of the target solid-state storage device, the target data obtaining apparatus may simulate, on the development platform, an operating state of the target solid-state storage device, where the target solid-state storage device may be a 3D TLC flash memory, and may also be another solid-state storage device, where the 3D TLC flash memory is taken as an example for description, and in addition, the operating state includes at least one of a read operation, a write operation, or an erase operation on the target solid-state storage device. That is, in order to set the optimal offset voltage, a self-owned solid state disk development platform can be used as an operating environment to perform simulation of a large number of read operations, write operations, and erase operations for the 3D TLC flash memory.
102. At a first ambient temperature, a write operation is performed to a target solid-state storage device to determine a first solid-state storage device that fills disk capacity.
In this embodiment, the target data obtaining apparatus may perform a write operation on the target solid-state storage device at a first environmental temperature, so as to obtain the first solid-state storage device with the capacity of the disk filled, where the first environmental temperature may be at a normal temperature.
103. Different condition variables are set for the first solid-state storage device.
In this embodiment, after obtaining the first solid-state storage device full of data, the target data obtaining apparatus may set different condition variables to the first solid-state storage device.
It should be noted that, as can be seen from the above description, for the condition variables set for the first solid-state storage device in step 103, the description may be performed from four dimensions (RT, RD, PE, and TC) that affect the read-write stability of the solid-state storage device, that is, different condition variables are set for the four dimensions, that is, one dimension corresponds to one condition variable, and the following description specifically describes:
RT dimension:
and under the environment of the second environment temperature, circularly executing the first read operation on the first solid-state storage device by taking the preset time length as a period until a preset first preset condition is reached.
In particular, to accelerate the aging of the first solid-state storage device, a second ambient temperature may be preset, wherein the second environment temperature is different from the first environment temperature, and the second environment temperature is higher than the first environment temperature, and the first solid-state storage device is placed at the second ambient temperature, and the first read operation is executed on the first solid-state storage device in a cycle with a preset time length as a period until a first preset condition is reached, that is, the first solid-state storage device may be placed in an environment with a second ambient temperature, and then a read operation may be performed on the first solid-state storage device every preset time (for example, 30 minutes) until a first preset condition is reached, the first preset condition may be a high-temperature time period set according to a corresponding relationship between the temperature of the first solid-state storage device and the life of the first solid-state storage device, for example, set to 48 hours; the first preset condition may also be that the number of times the read operation is performed on the first solid-state storage device reaches a threshold value, for example, the read operation is performed every 30 minutes for a total of 100 reads.
RD dimension:
and performing continuous read operation and random read operation on the first solid-state storage device at the first environment temperature until the sum of the times of the continuous read operation and the random read operation reaches a first preset value. Specifically, a read-holding script may be first constructed for the first solid-state storage device, where the read-holding script includes two ways of continuous reading and random reading, and the read script is executed on the first solid-state storage device at the first environmental temperature until the sum of the times of continuous reading and random reading reaches a first preset value, for example, 200 times.
It should be noted that the ratio of the continuous read operation and the random read operation may be 1:1, that is, one continuous read operation is performed, and one random read operation is also performed.
PE dimension:
and performing second reading operation and erasing operation on the first solid-state storage device at the first ambient temperature until the number of times of erasing operation reaches a second preset value, wherein the second preset value is different from the first preset value.
Dimension TC:
and setting an environment temperature set, wherein the quantity of the environment temperatures in the environment temperature set is a third preset value, the environment temperature set does not comprise the first environment temperature, and the third preset value and the second preset value are different preset values.
A third read operation is performed on the first solid-state storage device at each ambient temperature in the set of ambient temperatures. That is, one set of ambient temperatures is set and a read operation is performed on the first solid-state storage arrangement at each ambient temperature in the set of ambient temperatures. For example, a read operation is performed on the first solid-state storage device at an ambient temperature of 70 c and a read operation is performed on the first solid-state storage device at an ambient temperature of-40 c.
104. And acquiring a plurality of BER data corresponding to the running states of the first solid-state storage device under different condition variables.
In this embodiment, after setting different condition variables, the target data acquiring device may acquire a plurality of BER data corresponding to the operating state of the first solid-state storage device under each condition variable, that is, in order to make the obtained offset voltage as optimal as possible, it is necessary to acquire as many BER data under each condition variable as possible, where the plurality of BER data have an association relationship with different condition variables and different operating states.
The specific operation is as follows, corresponding to the above 4 different dimensions, each dimension acquires a plurality of BER data:
in the RT dimension, performing read operation on the first solid-state storage device every 30 minutes at a second ambient temperature until a first preset condition is reached, counting the operation times of entering different error correction links, and acquiring BER data of each operation of entering the different error correction links, wherein in the different error correction links, when a certain read operation is wrong in the read operation, correcting the read operation on a real solid-state storage device, and recording the BER data of the time;
under the RD dimensionality, continuously executing continuous reading operation and random reading operation on the first solid-state storage device at a first environment temperature until the times of the continuous reading operation and the random reading operation reach a first preset value, and acquiring BER data of different Read Count stages to obtain a plurality of BER data;
under the PE dimension, continuously executing reading operation and erasing operation on the first solid-state storage device at a first environment temperature until the number of times of the erasing operation reaches a second preset value, and acquiring BER data corresponding to different erasing times to obtain a plurality of BER data;
in the TC dimension, at different environmental temperatures, a read operation is performed on the first solid-state storage device, BER data at each environmental temperature is recorded, and the BER data is compared with BER data obtained by performing a write operation on the first solid-state storage device at the first environmental temperature, so as to obtain a plurality of BER data, for example, BER data corresponding to an environmental temperature of 70 ℃ is obtained by performing a read operation on the first solid-state storage device at an environmental temperature of 70 ℃, or BER data corresponding to an environmental temperature of-40 ℃ is obtained by performing a read operation on the first solid-state storage device at an environmental temperature of-40 ℃.
105. The BER data with the smallest value among the plurality of BER data is determined as target BER data.
In this embodiment, after obtaining a plurality of BER data in a plurality of dimensions, the BER data having the smallest value in each dimension is determined as the target BER data, that is, the optimal bias voltage.
It should be noted that, in order to make the display more intuitive, a plurality of BER data in each dimension may be generated into respective BER curves.
In summary, in the embodiment of the present invention, four factors affecting the data stability of Nand Flash are considered, a condition variable for controlling each factor is constructed, each factor is analyzed to obtain the optimal BER data, and the optimal BER data is applied to the solid-state storage device.
The embodiments of the present invention are explained above from the viewpoint of the method of acquiring target data, and the embodiments of the present invention are explained below from the viewpoint of the apparatus for acquiring target data.
Referring to fig. 2, fig. 2 is a schematic diagram of an embodiment of a target data obtaining apparatus according to an embodiment of the present invention, where the target data obtaining apparatus includes:
a simulation unit 201, configured to simulate, at a development platform, an operating state of a target solid-state storage device, where the operating state includes at least one of a read operation, a write operation, or an erase operation on the target solid-state storage device;
a processing unit 202, configured to perform a write operation on the target solid-state storage device at a first ambient temperature to determine a first solid-state storage device that fills a disk capacity;
a setting unit 203, configured to set different condition variables for the first solid-state storage device;
an obtaining unit 204, configured to obtain multiple bit error rate BER data corresponding to operating states of the first solid-state storage device under the different condition variables, where the multiple bit error rate BER data have association relations with the different condition variables and the different operating states;
a determining unit 205, configured to determine the BER data with the smallest value in the plurality of BER data as the target BER data.
Optionally, the setting unit 203 is specifically configured to:
under the environment of second ambient temperature, it is right to use the cycle of presetting for a long time as the cycle first solid-state device carries out first reading, until reaching and predetermineeing first preset condition in advance, second ambient temperature with first ambient temperature is the ambient temperature of difference, just second ambient temperature is greater than first ambient temperature.
Optionally, the setting unit 203 is further specifically configured to:
and performing continuous reading operation and random reading operation on the first solid-state storage device at the first environment temperature until the sum of the times of the continuous reading operation and the random reading operation reaches a first preset value.
Optionally, the setting unit 203 is further specifically configured to:
and performing second reading operation and erasing operation on the first solid-state storage device at the first ambient temperature until the number of times of erasing operation reaches a second preset value, wherein the second preset value is a different preset value from the first preset value.
Optionally, the setting unit 203 is further specifically configured to:
setting an environment temperature set, wherein the number of environment temperatures in the environment temperature set is a third preset value, the environment temperature set does not include the first environment temperature, and the third preset value and the second preset value are different preset values;
performing a third read operation on the first solid-state storage device at each ambient temperature in the set of ambient temperatures.
The interaction manner among the units of the apparatus for acquiring target data in this embodiment is as described in the embodiment shown in fig. 1, and details thereof are not repeated here.
In summary, in the embodiment of the present invention, four factors affecting the data stability of Nand Flash are considered, a condition variable for controlling each factor is constructed, each factor is analyzed to obtain the optimal BER data, and the optimal BER data is applied to the solid-state storage device.
The above describes the target data acquisition apparatus in the embodiment of the present invention from the perspective of the modular functional entity, and the following describes the target data acquisition apparatus in the embodiment of the present invention from the perspective of hardware processing.
Referring to fig. 3, an embodiment of an apparatus 300 for acquiring target data according to an embodiment of the present invention includes:
an input device 301, an output device 302, a processor 303 and a memory 304 (wherein the number of the processor 303 may be one or more, and one processor 303 is taken as an example in fig. 3). In some embodiments of the present invention, the input device 301, the output device 302, the processor 303 and the memory 304 may be connected by a bus or other means, wherein the connection by the bus is exemplified in fig. 3.
Wherein, by calling the operation instruction stored in the memory 304, the processor 303 is configured to perform the following steps:
simulating, at a development platform, a running state of a target solid-state storage device, the running state including at least one of a read operation, a write operation, or an erase operation on the target solid-state storage device;
performing a write operation on the target solid-state storage device at a first ambient temperature to determine a first solid-state storage device that fills disk capacity;
setting different condition variables for the first solid-state storage device;
acquiring a plurality of BER data corresponding to the operating state of the first solid-state storage device under the different condition variables, wherein the BER data have association relations with the different condition variables and the different operating states;
and determining the BER data with the minimum value in the plurality of BER data as target BER data.
Optionally, the setting of different condition variables for the first solid-state storage device includes:
under the environment of second ambient temperature, it is right to use the cycle of presetting for a long time as the cycle first solid-state device carries out first reading, until reaching and predetermineeing first preset condition in advance, second ambient temperature with first ambient temperature is the ambient temperature of difference, just second ambient temperature is greater than first ambient temperature.
Optionally, the setting of different condition variables for the first solid-state storage device includes:
and performing continuous reading operation and random reading operation on the first solid-state storage device at the first environment temperature until the sum of the times of the continuous reading operation and the random reading operation reaches a first preset value.
Optionally, the setting of different condition variables for the first solid-state storage device includes:
and performing second reading operation and erasing operation on the first solid-state storage device at the first ambient temperature until the number of times of erasing operation reaches a second preset value, wherein the second preset value is a different preset value from the first preset value.
Optionally, the setting of different condition variables for the target solid-state storage device includes:
setting an environment temperature set, wherein the number of environment temperatures in the environment temperature set is a third preset value, the environment temperature set does not include the first environment temperature, and the third preset value and the second preset value are different preset values;
performing a third read operation on the first solid-state storage device at each ambient temperature in the set of ambient temperatures.
Referring to fig. 4, fig. 4 is a schematic view of an embodiment of an electronic device according to an embodiment of the invention.
As shown in fig. 4, an embodiment of the present invention provides an electronic device 400, which includes a memory 410, a processor 420, and a computer program 411 stored in the memory 410 and executable on the processor 420, and when the processor 420 executes the computer program 411, the following steps are implemented:
simulating, at a development platform, a running state of a target solid-state storage device, the running state including at least one of a read operation, a write operation, or an erase operation on the target solid-state storage device;
performing a write operation on the target solid-state storage device at a first ambient temperature to determine a first solid-state storage device that fills disk capacity;
setting different condition variables for the first solid-state storage device;
acquiring a plurality of BER data corresponding to the operating state of the first solid-state storage device under the different condition variables, wherein the BER data have association relations with the different condition variables and the different operating states;
and determining the BER data with the minimum value in the plurality of BER data as target BER data.
In a specific implementation, when the processor 420 executes the computer program 411, any of the embodiments corresponding to fig. 1 may be implemented.
Since the electronic device described in this embodiment is a device used for implementing the method for acquiring the target data in the embodiment of the present invention, based on the method described in the embodiment of the present invention, a person skilled in the art can understand the specific implementation manner of the electronic device in this embodiment and various variations thereof, so that how to implement the method in the embodiment of the present invention by the electronic device is not described in detail herein, and as long as the person skilled in the art implements the device used for implementing the method in the embodiment of the present invention, the device used for implementing the method in the embodiment of the present invention belongs to the scope of the present invention.
Referring to fig. 5, fig. 5 is a schematic diagram illustrating an embodiment of a computer-readable storage medium according to the present invention.
As shown in fig. 5, the present embodiment provides a computer-readable storage medium 500 having a computer program 511 stored thereon, the computer program 511 implementing the following steps when executed by a processor:
simulating, at a development platform, a running state of a target solid-state storage device, the running state including at least one of a read operation, a write operation, or an erase operation on the target solid-state storage device;
performing a write operation on the target solid-state storage device at a first ambient temperature to determine a first solid-state storage device that fills disk capacity;
setting different condition variables for the first solid-state storage device;
acquiring a plurality of BER data corresponding to the operating state of the first solid-state storage device under the different condition variables, wherein the BER data have association relations with the different condition variables and the different operating states;
and determining the BER data with the minimum value in the plurality of BER data as target BER data.
In a specific implementation, the computer program 511 may implement any of the embodiments corresponding to fig. 1 when executed by a processor.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
It can be clearly understood by those skilled in the art that, for convenience and brevity of description, the specific working processes of the system, the apparatus and the module described above may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
As will be appreciated by one skilled in the art, embodiments of the present invention may be provided as a method, system, or computer program product. Accordingly, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The present invention is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems) and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
In a typical configuration, a computing device includes one or more processors (CPUs), input/output interfaces, network interfaces, and memory.
The memory may include forms of volatile memory in a computer readable medium, Random Access Memory (RAM) and/or non-volatile memory, such as Read Only Memory (ROM) or flash memory (flash RAM). The memory is an example of a computer-readable medium.
Computer-readable media, including both non-transitory and non-transitory, removable and non-removable media, may implement information storage by any method or technology. The information may be computer readable instructions, data structures, modules of a program, or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), Static Random Access Memory (SRAM), Dynamic Random Access Memory (DRAM), other types of Random Access Memory (RAM), Read Only Memory (ROM), Electrically Erasable Programmable Read Only Memory (EEPROM), block flash memory or other memory technology, compact disc read only memory (CD-ROM), Digital Versatile Discs (DVD) or other optical storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other non-transmission medium that can be used to store information that can be accessed by a computing device. As defined herein, a computer readable medium does not include a transitory computer readable medium such as a modulated data signal and a carrier wave.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other matching elements in a process, method, article, or apparatus that comprises the element.
As will be appreciated by one skilled in the art, embodiments of the present invention may be provided as a method, system, or computer program product. Accordingly, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The above are merely examples of the present invention, and are not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (10)
1. A method for acquiring target data, comprising:
simulating, at a development platform, a running state of a target solid-state storage device, the running state including at least one of a read operation, a write operation, or an erase operation on the target solid-state storage device;
performing a write operation on the target solid-state storage device at a first ambient temperature to determine a first solid-state storage device that fills disk capacity;
setting different condition variables for the first solid-state storage device;
the condition variables are: the duration of data in the same block, the number of times of read operations in the same block, the number of times of wear of the block, and changes in ambient temperature;
acquiring a plurality of BER data corresponding to the operating state of the first solid-state storage device under the different condition variables, wherein the BER data have association relations with the different condition variables and the different operating states;
and determining the BER data with the minimum value in the plurality of BER data as target BER data.
2. The method of claim 1, wherein setting different condition variables for the first solid-state storage device comprises:
under the environment of second ambient temperature, it is right to use the cycle of presetting for a long time as the cycle first solid-state device carries out first reading, until reaching and predetermineeing first preset condition in advance, second ambient temperature with first ambient temperature is the ambient temperature of difference, just second ambient temperature is greater than first ambient temperature.
3. The method of claim 1, wherein setting different condition variables for the first solid-state storage device comprises:
and performing continuous reading operation and random reading operation on the first solid-state storage device at the first environment temperature until the sum of the times of the continuous reading operation and the random reading operation reaches a first preset value.
4. The method of claim 1, wherein setting different condition variables for the first solid-state storage device comprises:
and performing second reading operation and erasing operation on the first solid-state storage device at the first ambient temperature until the number of times of erasing operation reaches a second preset value, wherein the second preset value is different from the first preset value.
5. The method of claim 1, wherein setting different condition variables for the target solid-state storage device comprises:
setting an environment temperature set, wherein the number of environment temperatures in the environment temperature set is a third preset value, the environment temperature set does not include the first environment temperature, and the third preset value and the second preset value are different preset values;
performing a third read operation on the first solid-state storage device at each ambient temperature in the set of ambient temperatures.
6. An apparatus for acquiring target data, comprising:
the simulation unit is used for simulating the running state of a target solid-state storage device in a development platform, wherein the running state comprises at least one of reading operation, writing operation or erasing operation of the target solid-state storage device;
the processing unit is used for performing write operation on the target solid-state storage device at a first environment temperature so as to determine a first solid-state storage device which fills the capacity of a disk;
the setting unit is used for setting different condition variables for the first solid-state storage device; the condition variables are: the duration of data in the same block, the number of times of read operations in the same block, the number of times of wear of the block, and changes in ambient temperature;
an obtaining unit, configured to obtain multiple bit error rate BER data corresponding to operating states of the first solid-state storage device under the different condition variables, where the multiple bit error rate BER data have association relations with the different condition variables and the different operating states;
a determining unit configured to determine a minimum BER data among the plurality of BER data as target BER data.
7. The apparatus according to claim 6, wherein the setting unit is specifically configured to:
under the environment of second ambient temperature, it is right to use the cycle of presetting for a long time as the cycle first solid-state device carries out first reading, until reaching and predetermineeing first preset condition in advance, second ambient temperature with first ambient temperature is the ambient temperature of difference, just second ambient temperature is greater than first ambient temperature.
8. The apparatus according to claim 6, wherein the setting unit is further specifically configured to:
and performing continuous reading operation and random reading operation on the first solid-state storage device at the first environment temperature until the sum of the times of the continuous reading operation and the random reading operation reaches a first preset value.
9. The apparatus according to claim 6, wherein the setting unit is further specifically configured to:
and performing second reading operation and erasing operation on the first solid-state storage device at the first ambient temperature until the number of times of erasing operation reaches a second preset value, wherein the second preset value is different from the first preset value.
10. The apparatus according to claim 6, wherein the setting unit is further specifically configured to:
setting an environment temperature set, wherein the number of environment temperatures in the environment temperature set is a third preset value, the environment temperature set does not include the first environment temperature, and the third preset value and the second preset value are different preset values;
performing a third read operation on the first solid-state storage device at each ambient temperature in the set of ambient temperatures.
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| CN102968350A (en) * | 2012-11-09 | 2013-03-13 | 江苏乐买到网络科技有限公司 | System debugging method for solid state memory |
| CN106448737A (en) * | 2016-09-30 | 2017-02-22 | 北京忆芯科技有限公司 | Flash memory data reading method and device and solid disk drive |
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| CN102968350A (en) * | 2012-11-09 | 2013-03-13 | 江苏乐买到网络科技有限公司 | System debugging method for solid state memory |
| CN106448737A (en) * | 2016-09-30 | 2017-02-22 | 北京忆芯科技有限公司 | Flash memory data reading method and device and solid disk drive |
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