CN108958658A - A kind of acquisition methods and device of target data - Google Patents

A kind of acquisition methods and device of target data Download PDF

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Publication number
CN108958658A
CN108958658A CN201810693111.3A CN201810693111A CN108958658A CN 108958658 A CN108958658 A CN 108958658A CN 201810693111 A CN201810693111 A CN 201810693111A CN 108958658 A CN108958658 A CN 108958658A
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storage device
solid storage
environment temperature
environment
read operation
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CN108958658B (en
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郭峰
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Zhengzhou Yunhai Information Technology Co Ltd
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Zhengzhou Yunhai Information Technology Co Ltd
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0602Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614Improving the reliability of storage systems
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0668Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671In-line storage system
    • G06F3/0673Single storage device
    • G06F3/0679Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)

Abstract

The embodiment of the invention provides a kind of acquisition methods of target data and devices, for improving the stability of solid storage device read-write data.This method comprises: the operating status includes at least one of read operation, write operation or the erasing operation to the target solid storage device in the operating status of development platform simulated target solid storage device;At a temperature of first environment, write operation is executed to the target solid storage device, to determine the first solid storage device of filling up diskette capacity;Different conditional-variables is arranged to first solid storage device;The corresponding multiple error rate BER data of operating status of first solid storage device under the different conditional-variable are obtained, the multiple BER data have incidence relation from the different conditional-variable and the different operating status;The smallest BER data of numerical value in the multiple BER data are determined as target BER data.

Description

A kind of acquisition methods and device of target data
Technical field
The present invention relates to field of storage, in particular to the acquisition methods and device of a kind of target data.
Background technique
With the arrival of cloud computing era, the development of solid-state storage is advanced by leaps and bounds, and is currently based on 3D TLC (Triple Level Cell) solid state hard disk have become the indispensable a member of field of storage.Consumer level solid state hard disk capacity is small, transmission belt Width is low, compares not high with the stability requirement of enterprise-level solid state hard disk data, but its storage medium is special relative to mechanical hard disk The different determination datas of property are more demanding.
The data stability of solid state hard disk is mainly determined by flash memory characteristics, if do not managed effectively it, can be gone out Existing unpredictable problem, such as solid state hard disk will appear loss of data, time of same data block read-write without read-write for a long time Number excessively will lead to corrupt data etc..
In order to guarantee the stability of solid state disk read-write, usually default fixed offset voltage.Due in different environment sudden strains of a muscle The performance for the read-write data deposited can be variant, therefore fixed offset voltage is arranged and tends not to the read-write stability to solid state hard disk It plays a role.
Summary of the invention
The embodiment of the invention provides a kind of acquisition methods of target data and devices, for improving solid storage device Read and write stability.
First aspect of the embodiment of the present invention provides a kind of acquisition methods of target data, specifically includes:
In the operating status of development platform simulated target solid storage device, the operating status includes solid to the target At least one of read operation, write operation or the erasing operation of state storage equipment;
At a temperature of first environment, write operation is executed to the target solid storage device, to determine filling up diskette capacity The first solid storage device;
Different conditional-variables is arranged to first solid storage device;
Obtain the corresponding multiple mistakes of operating status of first solid storage device under the different conditional-variable Code rate BER data, the multiple BER data have association from the different conditional-variable and the different operating status Relationship;
The smallest BER data of numerical value in the multiple BER data are determined as target BER data.
Optionally, described different conditional-variables is arranged to first solid storage device to include:
Under second environment temperature environment, first is executed to first solid condition apparatus as loop cycle using preset duration and is read Operation, until reaching pre- first preset condition, the second environment temperature is different environment temperature from the first environment temperature Degree, and the second environment temperature is greater than the first environment temperature.
Optionally, described different conditional-variables is arranged to first solid storage device to include:
Continuous read operation is carried out to first solid storage device at a temperature of first environment and random write is grasped Make, until the sum of the number of the continuous read operation and the random read operation reaches the first preset value.
Optionally, described different conditional-variables is arranged to first solid storage device to include:
The second read operation and erasing operation are carried out to first solid storage device at a temperature of first environment, Until the number of the erasing operation reaches the second preset value, second preset value is different from first preset value Preset value.
Optionally, described different conditional-variables is arranged to the target solid storage device to include:
Environment temperature set is set, and the quantity of environment temperature is third preset value in the environment temperature set, and described Environment temperature set does not include the first environment temperature, and the third preset value is different preset from second preset value Value;
Third reading is carried out to first solid storage device under each environment temperature in the environment temperature set Operation.
Second aspect of the embodiment of the present invention provides a kind of acquisition device of target data, comprising:
Analogue unit, for the operating status in development platform simulated target solid storage device, the operating status packet Include at least one of read operation, write operation or the erasing operation to the target solid storage device;
Processing unit, for write operation being executed to the target solid storage device, with determination at a temperature of first environment First solid storage device of filling up diskette capacity;
Setting unit, for different conditional-variables to be arranged to first solid storage device;
Acquiring unit, for obtaining operating status of first solid storage device under the different conditional-variable Corresponding multiple error rate BER data, the multiple BER data and the different conditional-variable and the different operation State has incidence relation;
Determination unit, for the smallest BER data of numerical value in the multiple BER data to be determined as target BER data.
Optionally, the setting unit is specifically used for:
Under second environment temperature environment, first is executed to first solid condition apparatus as loop cycle using preset duration and is read Operation, until reaching pre- first preset condition, the second environment temperature is different environment temperature from the first environment temperature Degree, and the second environment temperature is greater than the first environment temperature.
Optionally, the setting unit also particularly useful for:
Continuous read operation is carried out to first solid storage device at a temperature of first environment and random write is grasped Make, until the sum of the number of the continuous read operation and the random read operation reaches the first preset value.
Optionally, the setting unit also particularly useful for:
The second read operation and erasing operation are carried out to first solid storage device at a temperature of first environment, Until the number of the erasing operation reaches the second preset value, second preset value is different from first preset value Preset value.
Optionally, the setting unit also particularly useful for:
Environment temperature set is set, and the quantity of environment temperature is third preset value in the environment temperature set, and described Environment temperature set does not include the first environment temperature, and the third preset value is different preset from second preset value Value;
Third reading is carried out to first solid storage device under each environment temperature in the environment temperature set Operation.
The third aspect of the embodiment of the present invention provides a kind of processor, and the processor is for running computer program, institute It executes when stating computer program operation such as the step of above-mentioned various aspects the method.
Fourth aspect of the embodiment of the present invention provides a kind of computer readable storage medium, is stored thereon with computer journey Sequence, it is characterised in that: the computer program is when being executed by processor the step of above-mentioned various aspects the method.
As can be seen from the above technical solutions, in the embodiment of the present invention, consider that four influence Nand Flash datas are stablized Property factor, building controls the conditional-variable of each factor, and is analyzed to obtain optimal BER data for each factor, And be applied in solid storage device, the fixed offset voltage of middle setting, can be improved solid-state so compared with the existing technology Store the stability of equipment read-write data.
Detailed description of the invention
Fig. 1 is the embodiment schematic diagram of the acquisition methods of target data provided in an embodiment of the present invention;
Fig. 2 is the embodiment schematic diagram of the acquisition device of target data provided in an embodiment of the present invention;
Fig. 3 is the hardware structural diagram of the acquisition device of target data provided in an embodiment of the present invention;
Fig. 4 is the embodiment schematic diagram of a kind of electronic equipment provided in an embodiment of the present invention;
Fig. 5 is a kind of embodiment schematic diagram of computer readable storage medium provided in an embodiment of the present invention.
Specific embodiment
The embodiment of the invention provides a kind of acquisition methods of target data and the acquisition device of target data, for improving The stability of solid storage device read-write data.
Description and claims of this specification and term " first ", " second ", " third ", " in above-mentioned attached drawing The (if present)s such as four " are to be used to distinguish similar objects, without being used to describe a particular order or precedence order.It should manage The data that solution uses in this way are interchangeable under appropriate circumstances, so that the embodiments described herein can be in addition to illustrating herein Or the sequence other than the content of description is implemented.In addition, term " includes " and " having " and their any deformation, it is intended that Cover it is non-exclusive include, for example, containing the process, method, system, product or equipment of a series of steps or units need not limit In step or unit those of is clearly listed, but may include be not clearly listed or for these process, methods, produce The other step or units of product or equipment inherently.
The present invention is described for the preservation and error correction of data in solid-state storage product, is developed using own solid state hard disk Platform carries out a large amount of read-write emulation as running environment, for 3D TLC flash memory, obtains optimal offset by analysis simulation result Voltage is simultaneously applied in product.
The present invention considers four kinds of conditions: first is that data duration in the same block, when being defined as retention (RT) Between;Second is that the number of read operation occurs in same, it is defined as read disturb (RD);Third is that the abrasion number of block, definition For PE;Fourth is that the variation of environment temperature, is defined as TC, above four kinds of conditions are individually controlled as conditional-variable.
The present invention is according to the characteristic of Nand Flash, and from RT, RD, the analysis of PE and TC four dimensions is finally obtained optimal Offset voltage, wherein RT refers to the duration of holding of the Nand Flash in energization, by the way of timer count The duration is counted, corresponding emulation threshold value (i.e. offset voltage) is formulated by the holding situation of data in analysis different time sections; RD refers to that the number of the read operation to same physics block will affect the bit error rate (the Bit Error of subsequent read operation Ratio, BER) and frame error rate (Frame Error Rate, FER), by largely manufacturing read operation accumulation, analysis subsequent reads behaviour The effect of work;PE dimension refers to that nand flash its holding electronic capability can slowly become with the increase of the number of erasable operation Weak, the preservation effect of data is different under the conditions of different PE.
The acquisition methods of target data are described from the angle of the acquisition device of target data below, the target data Acquisition device can be server, or the service unit in server, specifically without limitation.
Referring to Fig. 1, Fig. 1 is one embodiment signal of the acquisition methods of target data provided in an embodiment of the present invention Figure, comprising:
101, in the operating status of development platform simulated target solid storage device.
The present embodiment, when needing the offset voltage to target solid storage device to be configured, target data Acquisition device can in development platform simulated target solid storage device operating status, wherein the target solid-state storage is set Standby can be 3D TLC flash memory, or other solid storage devices, this is illustrated for sentencing 3D TLC flash memory, separately Outside, which includes at least one of the read operation to target solid storage device, write operation or erasing operation.? That is in order to which optimal offset voltage is arranged, it can be using own solid state hard disk development platform as running environment, for 3D TLC flash memory carries out the emulation of a large amount of read operations, write operation, erasing operation.
102, at a temperature of first environment, write operation is executed to target solid storage device, to determine filling up diskette capacity The first solid storage device.
In the present embodiment, the acquisition device of target data can be at a temperature of first environment, to target solid storage device Write operation is executed, and then obtains the first solid storage device of filling up diskette capacity, wherein the first environment temperature can be positive In the case of normal temperature.
103, different conditional-variables the first solid storage device is arranged.
In the present embodiment, the acquisition device of target data, can after obtaining writing the first solid storage device of full data The first solid storage device to be arranged different conditional-variables.
It should be noted that refering to foregoing description it is found that in step 103 to the first solid storage device setting item Part variable can be illustrated from the four dimensions (RT, RD, PE, TC) for the read-write stability for influencing solid storage device, namely Different conditional-variables is set for four dimensions, that is to say, that the corresponding conditional-variable of a dimension carries out specifically below It is bright:
RT dimension:
Under second environment temperature environment, first is executed to the first solid storage device as loop cycle using preset duration and is read Operation, until reaching pre- first preset condition.
Specifically, the aging in order to accelerate the first solid storage device, it can be with preset second environment temperature, wherein second Environment temperature is different temperature from first environment temperature, and second environment temperature is higher than first environment temperature, and first is consolidated State storage equipment is placed in second environment temperature, and executes first to the first solid condition apparatus as loop cycle using preset duration and read to grasp Make, until reaching the first preset condition, that is to say, that the first solid storage device can be put into the environment of second environment temperature In, later every preset duration (such as 30 minutes) to first read operation of storage equipment execution admittedly, until it is pre- to reach first If condition, which can temperature and the first solid storage device locating for the according to first solid storage device The high temperature duration of correspondence setting between service life, such as setting 48 hours;First preset condition can also be, to first The number that solid storage device executes read operation reaches a threshold value, such as reads within every 30 minutes primary, reading 100 times in total.
RD dimension:
Continuous read operation and random read operation are carried out to the first solid storage device at a temperature of first environment, until even Resume studies operation and random read operation the sum of number reach the first preset value until.Specifically, can first be the first solid-state Storage device build holds reading script, including continuously read with random write two ways, and to the first solid-state at a temperature of first environment It stores equipment and executes reading script, until the sum of continuous read operation and the number of random read operation reach the first preset value, Such as until reaching 200 times.
Need to illustrate when, the ratio of continuous read operation and random read operation can be 1:1, in other words execute and once connect It resumes studies operation, also executes primary random read operation.
PE dimension:
The second read operation and erasing operation are carried out to the first solid storage device at a temperature of first environment, until erasing Until the number of operation reaches the second preset value, the second preset value is different preset values from the first preset value.
TC dimension:
Environment temperature set is set, wherein environment temperature quantity in environment temperature set is third preset value, and environment Temperature set does not include the first environment temperature, and third preset value is different preset values from the second preset value.
Third read operation is carried out to the first solid storage device under each environment temperature in environment temperature set.Also It is to say one environment temperature set of setting, and the first solid-state storage is arranged under each environment temperature in environment temperature set Execute read operation.Such as read operation is executed to the first solid storage device under 70 DEG C of environment temperature, in -40 DEG C of environment temperature Read operation is executed to the first solid storage device under degree.
104, operating status corresponding multiple BER numbers of first solid storage device under different conditional-variables are obtained According to.
In the present embodiment, the acquisition device of target data is after being arranged different conditional-variables, available every kind of item Under part variable, the corresponding multiple BER data of the operating status of the first solid storage device, that is to say, that in order to enable obtain Offset voltage is optimal as far as possible, then just needing the BER data under every kind of conditional-variable of acquisition as much as possible, wherein Multiple BER data have incidence relation from different conditional-variables and different operating statuses.
Concrete operations are as follows, and corresponding to 4 above-mentioned different dimensions, each dimension obtains multiple BER data:
Under RT dimension, at a temperature of second environment, the first solid-state storage was arranged in every 30 minutes and carries out a read operation, until Reach the first preset condition, statistics wherein enters the number of operations of different error correction links, and obtains into different error correction links The BER data operated every time, wherein different error correction links, when executing read operation, certain read operation error, The secondary read operation is corrected in true solid storage device then, and records the BER data of this time;
Under RD dimension, at a temperature of first environment, continuously to the continuous read operation of the first solid storage device execution and at random Read operation until the number of continuous read operation and random read operation reaches the first preset value, and obtains different Read The BER data in Count stage obtain multiple BER data;
Under PE dimension, at a temperature of first environment, read operation is continuously performed to the first solid storage device and erasing is grasped Make, until the number of erasing operation reaches the second preset value, and obtains the corresponding BER data of different erasing times, it is more to obtain A BER data;
Under TC dimension, under different environment temperatures, read operation is executed to the first solid storage device, and record each ring BER data at a temperature of border, and carried out with the BER data for executing write operation to the first solid storage device at a temperature of first environment It compares, obtains multiple BER data, such as read operation is executed to the first solid storage device under 70 DEG C of environment temperature and obtains 70 DEG C The corresponding BER data of environment temperature, or, under -40 DEG C of environment temperature to the first solid storage device execute read operation obtain - The corresponding BER data of 40 DEG C of environment temperature.
105, the smallest BER data of numerical value in multiple BER data are determined as target BER data.
It is after having obtained multiple BER data under multiple dimensions, numerical value under each dimension is the smallest in the present embodiment BER data are determined as target BER data, that is, optimal bias voltage.
Need to illustrate when, it is more intuitive in order to more show, multiple BER data under each dimension can be generated each From BER curve.
In conclusion considering the factor of four influence Nand Flash data stability, building control in the embodiment of the present invention The conditional-variable of each factor is made, and is analyzed to obtain optimal BER data for each factor, and be applied to solid-state storage In equipment, the fixed offset voltage of middle setting, can be improved solid storage device read-write data so compared with the existing technology Stability.
The embodiment of the present invention is illustrated from the angle of the acquisition methods of target data above, below from target data The angle of acquisition device is illustrated the embodiment of the present invention.
Referring to Fig. 2, Fig. 2 is the embodiment schematic diagram of the acquisition device of target data provided in an embodiment of the present invention, it should The acquisition device of target data includes:
Analogue unit 201, for the operating status in development platform simulated target solid storage device, the operating status Including at least one of read operation, write operation or the erasing operation to the target solid storage device;
Processing unit 202, for executing write operation to the target solid storage device at a temperature of first environment, with Determine the first solid storage device of filling up diskette capacity;
Setting unit 203, for different conditional-variables to be arranged to first solid storage device;
Acquiring unit 204, for obtaining operation of first solid storage device under the different conditional-variable The corresponding multiple error rate BER data of state, the multiple BER data and the different conditional-variable and described different Operating status has incidence relation;
Determination unit 205, for the smallest BER data of numerical value in the multiple BER data to be determined as target BER number According to.
Optionally, the setting unit 203 is specifically used for:
Under second environment temperature environment, first is executed to first solid condition apparatus as loop cycle using preset duration and is read Operation, until reaching pre- first preset condition, the second environment temperature is different environment temperature from the first environment temperature Degree, and the second environment temperature is greater than the first environment temperature.
Optionally, the setting unit 203 also particularly useful for:
Continuous read operation is carried out to first solid storage device at a temperature of first environment and random write is grasped Make, until the sum of the number of the continuous read operation and the random read operation reaches the first preset value.
Optionally, the setting unit 203 also particularly useful for:
The second read operation and erasing operation are carried out to first solid storage device at a temperature of first environment, Until the number of the erasing operation reaches the second preset value, second preset value is different from first preset value Preset value.
Optionally, the setting unit 203 also particularly useful for:
Environment temperature set is set, and the quantity of environment temperature is third preset value in the environment temperature set, and described Environment temperature set does not include the first environment temperature, and the third preset value is different preset from second preset value Value;
Third reading is carried out to first solid storage device under each environment temperature in the environment temperature set Operation.
Interactive mode between each unit of the acquisition device of target data in the present embodiment is implemented as illustrated in the foregoing fig. 1 Description in example, specific details are not described herein again.
In conclusion considering the factor of four influence Nand Flash data stability, building control in the embodiment of the present invention The conditional-variable of each factor is made, and is analyzed to obtain optimal BER data for each factor, and be applied to solid-state storage In equipment, the fixed offset voltage of middle setting, can be improved solid storage device read-write data so compared with the existing technology Stability.
It is carried out above from acquisition device of the angle of modular functionality entity to the target data in the embodiment of the present invention Description, is described from acquisition device of the angle of hardware handles to the target data in the embodiment of the present invention below.
Referring to Fig. 3,300 one embodiment of acquisition device of the target data in the embodiment of the present invention, comprising:
(wherein the quantity of processor 303 can be with for input unit 301, output device 302, processor 303 and memory 304 One or more, in Fig. 3 by taking a processor 303 as an example).In some embodiments of the invention, input unit 301, output Device 302, processor 303 and memory 304 can be connected by bus or other means, wherein to be connected by bus in Fig. 3 For.
Wherein, the operational order stored by calling memory 304, processor 303, for executing following steps:
In the operating status of development platform simulated target solid storage device, the operating status includes solid to the target At least one of read operation, write operation or the erasing operation of state storage equipment;
At a temperature of first environment, write operation is executed to the target solid storage device, to determine filling up diskette capacity The first solid storage device;
Different conditional-variables is arranged to first solid storage device;
Obtain the corresponding multiple mistakes of operating status of first solid storage device under the different conditional-variable Code rate BER data, the multiple BER data have association from the different conditional-variable and the different operating status Relationship;
The smallest BER data of numerical value in the multiple BER data are determined as target BER data.
Optionally, described different conditional-variables is arranged to first solid storage device to include:
Under second environment temperature environment, first is executed to first solid condition apparatus as loop cycle using preset duration and is read Operation, until reaching pre- first preset condition, the second environment temperature is different environment temperature from the first environment temperature Degree, and the second environment temperature is greater than the first environment temperature.
Optionally, described different conditional-variables is arranged to first solid storage device to include:
Continuous read operation is carried out to first solid storage device at a temperature of first environment and random write is grasped Make, until the sum of the number of the continuous read operation and the random read operation reaches the first preset value.
Optionally, described different conditional-variables is arranged to first solid storage device to include:
The second read operation and erasing operation are carried out to first solid storage device at a temperature of first environment, Until the number of the erasing operation reaches the second preset value, second preset value is different from first preset value Preset value.
Optionally, described different conditional-variables is arranged to the target solid storage device to include:
Environment temperature set is set, and the quantity of environment temperature is third preset value in the environment temperature set, and described Environment temperature set does not include the first environment temperature, and the third preset value is different preset from second preset value Value;
Third reading is carried out to first solid storage device under each environment temperature in the environment temperature set Operation.
Referring to Fig. 4, Fig. 4 is the embodiment schematic diagram of electronic equipment provided in an embodiment of the present invention.
As shown in figure 4, the embodiment of the invention provides a kind of electronic equipment 400, including memory 410, processor 420 and It is stored in the computer program 411 that can be run on memory 410 and on processor 420, processor 420 executes computer program It is performed the steps of when 411
In the operating status of development platform simulated target solid storage device, the operating status includes solid to the target At least one of read operation, write operation or the erasing operation of state storage equipment;
At a temperature of first environment, write operation is executed to the target solid storage device, to determine filling up diskette capacity The first solid storage device;
Different conditional-variables is arranged to first solid storage device;
Obtain the corresponding multiple mistakes of operating status of first solid storage device under the different conditional-variable Code rate BER data, the multiple BER data have association from the different conditional-variable and the different operating status Relationship;
The smallest BER data of numerical value in the multiple BER data are determined as target BER data.
In the specific implementation process, when processor 420 executes computer program 411, the corresponding embodiment of Fig. 1 may be implemented Middle any embodiment.
The electronic equipment introduced by the present embodiment is the acquisition methods institute that implements target data in the embodiment of the present invention The equipment of use, so based on method described in the embodiment of the present invention, those skilled in the art can understand this reality The specific embodiment and its various change form for applying the electronic equipment of example, so how to be realized for the electronic equipment herein Method in the embodiment of the present invention is no longer discussed in detail, as long as those skilled in the art implement the side in the embodiment of the present invention Equipment used by method belongs to the range of the invention to be protected.
Referring to Fig. 5, Fig. 5 is a kind of embodiment signal of computer readable storage medium provided in an embodiment of the present invention Figure.
As shown in figure 5, present embodiments providing a kind of computer readable storage medium 500, it is stored thereon with computer journey Sequence 511, the computer program 511 realize following steps when being executed by processor:
In the operating status of development platform simulated target solid storage device, the operating status includes solid to the target At least one of read operation, write operation or the erasing operation of state storage equipment;
At a temperature of first environment, write operation is executed to the target solid storage device, to determine filling up diskette capacity The first solid storage device;
Different conditional-variables is arranged to first solid storage device;
Obtain the corresponding multiple mistakes of operating status of first solid storage device under the different conditional-variable Code rate BER data, the multiple BER data have association from the different conditional-variable and the different operating status Relationship;
The smallest BER data of numerical value in the multiple BER data are determined as target BER data.
In the specific implementation process, Fig. 1 corresponding embodiment may be implemented when which is executed by processor Middle any embodiment.
In the above-described embodiments, it all emphasizes particularly on different fields to the description of each embodiment, there is no the portion being described in detail in some embodiment Point, reference can be made to the related descriptions of other embodiments.
It is apparent to those skilled in the art that for convenience and simplicity of description, the system of foregoing description, The specific work process of device and module, can refer to corresponding processes in the foregoing method embodiment, and details are not described herein.
It should be understood by those skilled in the art that, the embodiment of the present invention can provide as method, system or computer program Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the present invention Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the present invention, which can be used in one or more, The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) produces The form of product.
The present invention be referring to the method for the embodiment of the present invention, equipment (system) and computer program product flow chart and/ Or block diagram describes.It should be understood that each process that can be realized by computer program instructions in flowchart and/or the block diagram and/ Or the combination of the process and/or box in box and flowchart and/or the block diagram.It can provide these computer program instructions To general purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices processor to generate one A machine so that by the instruction that the processor of computer or other programmable data processing devices executes generate for realizing The device for the function of being specified in one or more flows of the flowchart and/or one or more blocks of the block diagram.
These computer program instructions, which may also be stored in, is able to guide computer or other programmable data processing devices with spy Determine in the computer-readable memory that mode works, so that it includes referring to that instruction stored in the computer readable memory, which generates, Enable the manufacture of device, the command device realize in one box of one or more flows of the flowchart and/or block diagram or The function of being specified in multiple boxes.
These computer program instructions also can be loaded onto a computer or other programmable data processing device, so that counting Series of operation steps are executed on calculation machine or other programmable devices to generate computer implemented processing, thus in computer or The instruction executed on other programmable devices is provided for realizing in one or more flows of the flowchart and/or block diagram one The step of function of being specified in a box or multiple boxes.
In a typical configuration, calculating equipment includes one or more processors (CPU), input/output interface, net Network interface and memory.
Memory may include the non-volatile memory in computer-readable medium, random access memory (RAM) and/ Or the forms such as Nonvolatile memory, such as read-only memory (ROM) or flash memory (flash RAM).Memory is computer-readable Jie The example of matter.
Computer-readable medium includes permanent and non-permanent, removable and non-removable media can be by any method Or technology come realize information store.Information can be computer readable instructions, data structure, the module of program or other data. The example of the storage medium of computer includes, but are not limited to phase change memory (PRAM), static random access memory (SRAM), moves State random access memory (DRAM), other kinds of random access memory (RAM), read-only memory (ROM), electric erasable Programmable read only memory (EEPROM), block dodge memory body or other memory techniques, read-only disc read only memory (CD-ROM) (CD-ROM), Digital versatile disc (DVD) or other optical storage, magnetic cassettes, magnetic tape disk storage or other magnetic storage devices or Any other non-transmission medium, can be used for storage can be accessed by a computing device information.As defined in this article, computer Readable medium does not include temporary computer readable media (transitory media), such as the data-signal and carrier wave of modulation.
It should also be noted that, the terms "include", "comprise" or its any other variant are intended to nonexcludability It include so that the process, method, commodity or the equipment that include a series of elements not only include those elements, but also to wrap Include other elements that are not explicitly listed, or further include for this process, method, commodity or equipment intrinsic want Element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including element There is also the other elements that matches in process, method, commodity or equipment.
It will be understood by those skilled in the art that the embodiment of the present invention can provide as method, system or computer program product. Therefore, complete hardware embodiment, complete software embodiment or embodiment combining software and hardware aspects can be used in the present invention Form.It is deposited moreover, the present invention can be used to can be used in the computer that one or more wherein includes computer usable program code The shape for the computer program product implemented on storage media (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) Formula.
The above is only the embodiment of the present invention, are not intended to restrict the invention.To those skilled in the art, The invention may be variously modified and varied.It is all within the spirit and principles of the present invention made by any modification, equivalent replacement, Improve etc., it should be included within scope of the presently claimed invention.

Claims (10)

1. a kind of acquisition methods of target data characterized by comprising
In the operating status of development platform simulated target solid storage device, the operating status includes depositing to the target solid-state Store up at least one of read operation, write operation or the erasing operation of equipment;
At a temperature of first environment, write operation is executed to the target solid storage device, to determine the of filling up diskette capacity One solid storage device;
Different conditional-variables is arranged to first solid storage device;
Obtain the corresponding multiple bit error rates of operating status of first solid storage device under the different conditional-variable BER data, the multiple BER data from the different conditional-variable and the different operating status there is association to close System;
The smallest BER data of numerical value in the multiple BER data are determined as target BER data.
2. the method according to claim 1, wherein it is described first solid storage device is arranged it is different Conditional-variable includes:
Under second environment temperature environment, first is executed to first solid condition apparatus as loop cycle using preset duration and reads to grasp Make, until reaching pre- first preset condition, the second environment temperature is different environment temperatures from the first environment temperature, And the second environment temperature is greater than the first environment temperature.
3. the method according to claim 1, wherein it is described first solid storage device is arranged it is different Conditional-variable includes:
Continuous read operation and random read operation are carried out to first solid storage device at a temperature of first environment, directly Until the sum of the number of the continuous read operation and the random read operation reaches the first preset value.
4. the method according to claim 1, wherein it is described first solid storage device is arranged it is different Conditional-variable includes:
The second read operation and erasing operation are carried out to first solid storage device at a temperature of first environment, until Until the number of the erasing operation reaches the second preset value, second preset value and first preset value are different pre- If value.
5. the method according to claim 1, wherein it is described the target solid storage device is arranged it is different Conditional-variable includes:
Environment temperature set is set, and the quantity of environment temperature is third preset value in the environment temperature set, and the environment Temperature set does not include the first environment temperature, and the third preset value is different preset values from second preset value;
Third read operation is carried out to first solid storage device under each environment temperature in the environment temperature set.
6. a kind of acquisition device of target data characterized by comprising
Analogue unit, for the operating status in development platform simulated target solid storage device, the operating status includes pair At least one of read operation, write operation or the erasing operation of the target solid storage device;
Processing unit, for executing write operation to the target solid storage device, being filled up with determination at a temperature of first environment First solid storage device of disk size;
Setting unit, for different conditional-variables to be arranged to first solid storage device;
Acquiring unit, it is corresponding for obtaining operating status of first solid storage device under the different conditional-variable Multiple error rate BER data, the multiple BER data and the different conditional-variable and the different operating status With incidence relation;
Determination unit, for the smallest BER data of numerical value in the multiple BER data to be determined as target BER data.
7. device according to claim 6, which is characterized in that the setting unit is specifically used for:
Under second environment temperature environment, first is executed to first solid condition apparatus as loop cycle using preset duration and reads to grasp Make, until reaching pre- first preset condition, the second environment temperature is different environment temperatures from the first environment temperature, And the second environment temperature is greater than the first environment temperature.
8. device according to claim 6, which is characterized in that the setting unit also particularly useful for:
Continuous read operation and random read operation are carried out to first solid storage device at a temperature of first environment, directly Until the sum of the number of the continuous read operation and the random read operation reaches the first preset value.
9. device according to claim 6, which is characterized in that the setting unit also particularly useful for:
The second read operation and erasing operation are carried out to first solid storage device at a temperature of first environment, until Until the number of the erasing operation reaches the second preset value, second preset value and first preset value are different pre- If value.
10. device according to claim 6, which is characterized in that the setting unit also particularly useful for:
Environment temperature set is set, and the quantity of environment temperature is third preset value in the environment temperature set, and the environment Temperature set does not include the first environment temperature, and the third preset value is different preset values from second preset value;
Third read operation is carried out to first solid storage device under each environment temperature in the environment temperature set.
CN201810693111.3A 2018-06-28 2018-06-28 Target data acquisition method and device Active CN108958658B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110956997A (en) * 2019-11-08 2020-04-03 苏州浪潮智能科技有限公司 Method, device and equipment for testing BER (bit error rate) of solid state disk

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102968350A (en) * 2012-11-09 2013-03-13 江苏乐买到网络科技有限公司 System debugging method for solid state memory
CN106448737B (en) * 2016-09-30 2020-12-01 厦门旌存半导体技术有限公司 Method and device for reading flash memory data and solid state drive

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110956997A (en) * 2019-11-08 2020-04-03 苏州浪潮智能科技有限公司 Method, device and equipment for testing BER (bit error rate) of solid state disk
CN110956997B (en) * 2019-11-08 2022-05-10 苏州浪潮智能科技有限公司 Method, device and equipment for testing BER (bit error rate) of solid state disk

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