CN111383684A - A reference voltage determination method, device and storage medium - Google Patents

A reference voltage determination method, device and storage medium Download PDF

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CN111383684A
CN111383684A CN201811613757.2A CN201811613757A CN111383684A CN 111383684 A CN111383684 A CN 111383684A CN 201811613757 A CN201811613757 A CN 201811613757A CN 111383684 A CN111383684 A CN 111383684A
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何飞
龙衡
田春雨
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Sanechips Technology Co Ltd
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Abstract

本发明实施例公开了一种参考电压确定方法，其特征在于，所述方法包括：以递增的方式遍历参考电压值集合中的参考电压，获取电子设备的最小参考电压；以递减的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最大参考电压；根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压。采用本发明的方法，通过参考电压递增的方式获取电子设备的最小参考电压，以及参考电压递减的方式获取电子设备的最大参考电压，能够适应不同外界环境带来的影响，避免参考电压边界不稳定的问题，使得参考电压数值更加准确，从而提高电子设备的系统稳定性。

Figure 201811613757

An embodiment of the present invention discloses a method for determining a reference voltage, which is characterized in that the method includes: traversing the reference voltages in a reference voltage value set in an incremental manner to obtain a minimum reference voltage of an electronic device; traversing the reference voltages in a decreasing manner The reference voltage in the voltage value set is to obtain the maximum reference voltage of the electronic device; the reference voltage of the electronic device is determined according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device. By adopting the method of the present invention, the minimum reference voltage of the electronic device is obtained by increasing the reference voltage, and the maximum reference voltage of the electronic device is obtained by decreasing the reference voltage, which can adapt to the influence of different external environments and avoid the instability of the reference voltage boundary. Therefore, the reference voltage value is more accurate, thereby improving the system stability of the electronic device.

Figure 201811613757

Description

一种参考电压确定方法、装置及存储介质A reference voltage determination method, device and storage medium

技术领域technical field

本发明涉及计算机技术领域，尤其涉及一种参考电压确定方法、装置及存储介质。The present invention relates to the field of computer technology, and in particular, to a reference voltage determination method, device and storage medium.

背景技术Background technique

双倍数据速率(Double Data Rate，DDR)是目前主流的内存规范，DDR存储技术中的双向数据参考电压(Data Input/Output Voltage Reference，DQ_VREF)指标，用于判断当前数据的值是1或0。当电压大于DQ_VREF值时判定数据为1，当电压小于DQ_VREF值时则判定数据为0。随着DDR存储技术的发展，运行速率越来越快，为了提高DDR的可靠性，在第四代DDR(DDR4)中引入了DQ_VREF实时训练的概念，以提高DQ_VREF的精确度。Double Data Rate (DDR) is the current mainstream memory specification. The bidirectional data reference voltage (Data Input/Output Voltage Reference, DQ_VREF) indicator in DDR storage technology is used to determine whether the value of the current data is 1 or 0 . When the voltage is greater than the DQ_VREF value, the data is judged to be 1, and when the voltage is less than the DQ_VREF value, the data is judged to be 0. With the development of DDR storage technology, the running speed is getting faster and faster. In order to improve the reliability of DDR, the concept of real-time training of DQ_VREF is introduced in the fourth generation DDR (DDR4) to improve the accuracy of DQ_VREF.

相关技术中，DQ_VREF训练时，从参考电压范围的最小值向最大值遍历，以确定可用的最小参考电压(VREF_Min)和可用的最大参考电压(VREF_Max)；但是，由于DDR涉及模拟信号，在参考电压范围的边界处会受到不同外界环境的影响而不稳定；当在参考电压范围的最小值的边界处出现不稳定的情况时，将导致所获得的可用的VREF_Max异常；如与所获得的可用的VREF_Min数值相接近，从而导致最终获得的DQ_VREF数值出现异常。In the related art, during DQ_VREF training, it traverses from the minimum value to the maximum value of the reference voltage range to determine the available minimum reference voltage (VREF_Min) and the available maximum reference voltage (VREF_Max); The boundary of the voltage range will be unstable due to the influence of different external environments; when instability occurs at the boundary of the minimum value of the reference voltage range, the obtained available VREF_Max will be abnormal; if the same as the obtained available VREF_Max The values of VREF_Min are close to each other, resulting in an abnormal DQ_VREF value finally obtained.

发明内容SUMMARY OF THE INVENTION

为解决上述技术问题，本发明实施例提供了一种参考电压确定方法、装置及存储介质，能够适应不同外界环境带来的影响，避免参考电压边界不稳定的问题，使得参考电压数值更加准确。In order to solve the above technical problems, the embodiments of the present invention provide a reference voltage determination method, device and storage medium, which can adapt to the influence of different external environments, avoid the problem of unstable reference voltage boundary, and make the reference voltage value more accurate.

本发明的技术方案是这样实现的：The technical scheme of the present invention is realized as follows:

第一方面，本发明实施例提供了一种参考电压确定方法，所述方法包括：In a first aspect, an embodiment of the present invention provides a method for determining a reference voltage, the method comprising:

以递增的方式遍历参考电压值集合中的参考电压，获取电子设备的最小参考电压；Traverse the reference voltages in the reference voltage value set in an incremental manner to obtain the minimum reference voltage of the electronic device;

以递减的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最大参考电压；Traverse the reference voltages in the reference voltage value set in a decreasing manner to obtain the maximum reference voltage of the electronic device;

根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压。The reference voltage of the electronic device is determined according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device.

在上述方案中，所述以递增的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最小参考电压，包括：In the above solution, the step of traversing the reference voltages in the reference voltage value set in an incremental manner to obtain the minimum reference voltage of the electronic device includes:

遍历所述参考电压值集合中的参考电压，对所述电子设备进行读写校验；Traverse the reference voltages in the reference voltage value set, and perform read-write verification on the electronic device;

将读写校验成功的第一个参考电压确定为所述电子设备的最小参考电压；Determining the first reference voltage for which the read and write verification is successful as the minimum reference voltage of the electronic device;

其中，所述参考电压值集合按参考电压值大小的升序进行排列。Wherein, the reference voltage value sets are arranged in ascending order of reference voltage values.

在上述方案中，所述以递增的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最小参考电压，包括：In the above solution, the step of traversing the reference voltages in the reference voltage value set in an incremental manner to obtain the minimum reference voltage of the electronic device includes:

基于所述参考电压值集合中的第一个参考电压，对所述电子设备进行读写校验；Based on the first reference voltage in the reference voltage value set, read and write verification is performed on the electronic device;

读写校验成功时，确定第一个参考电压为所述电子设备的最小参考电压；When the read-write verification is successful, determine that the first reference voltage is the minimum reference voltage of the electronic device;

读写校验失败时，基于所述参考电压值集合中的第二个参考电压，对所述电子设备进行读写校验，直至读写校验成功；将读写校验成功对应的参考电压确定为所述电子设备的最小参考电压。When the read-write verification fails, based on the second reference voltage in the reference voltage value set, read-write verification is performed on the electronic device until the read-write verification succeeds; the reference voltage corresponding to the successful read-write verification Determined as the minimum reference voltage for the electronic device.

在上述方案中，所述以递减的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最大参考电压，包括：In the above solution, the step of traversing the reference voltages in the reference voltage value set in a decreasing manner to obtain the maximum reference voltage of the electronic device includes:

遍历所述参考电压值集合中的参考电压，对所述电子设备进行读写校验；Traverse the reference voltages in the reference voltage value set, and perform read-write verification on the electronic device;

将读写校验成功的第一个参考电压确定为所述电子设备的最大参考电压；Determining the first reference voltage for which the read and write verification is successful as the maximum reference voltage of the electronic device;

其中，所述参考电压值集合按参考电压值大小的降序进行排列。Wherein, the reference voltage value sets are arranged in descending order of reference voltage values.

在上述方案中，所述以递减的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最大参考电压，包括：In the above solution, the step of traversing the reference voltages in the reference voltage value set in a decreasing manner to obtain the maximum reference voltage of the electronic device includes:

基于所述参考电压值集合中的第一个参考电压，对所述电子设备进行读写校验；Based on the first reference voltage in the reference voltage value set, read and write verification is performed on the electronic device;

读写校验成功时，确定第一个参考电压为所述电子设备的最大参考电压；When the read-write verification is successful, determine that the first reference voltage is the maximum reference voltage of the electronic device;

读写校验失败时，基于所述参考电压值集合中的第二个参考电压，对所述电子设备进行读写校验，直至读写校验成功；将读写校验成功对应的参考电压确定为所述电子设备的最大参考电压。When the read-write verification fails, based on the second reference voltage in the reference voltage value set, read-write verification is performed on the electronic device until the read-write verification succeeds; the reference voltage corresponding to the successful read-write verification Determined as the maximum reference voltage for the electronic device.

在上述方案中，所述根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压之后，所述方法还包括：In the above solution, after the reference voltage of the electronic device is determined according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device, the method further includes:

基于所述电子设备的参考电压对所述电子设备进行颗粒参考电压训练，以确定所述电子设备的颗粒参考电压。The electronic device is subjected to particle reference voltage training based on the reference voltage of the electronic device to determine the particle reference voltage of the electronic device.

在上述方案中，所述根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压，包括：In the above solution, the determining the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device includes:

将所述电子设备的最小参考电压和所述电子设备的最大参考电压的平均值确定为所述电子设备的参考电压。An average value of the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device is determined as the reference voltage of the electronic device.

第二方面，本发明实施例提供了一种参考电压确定装置，所述装置包括：In a second aspect, an embodiment of the present invention provides an apparatus for determining a reference voltage, the apparatus comprising:

获取模块，用于以递增的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最小参考电压；an acquisition module, configured to traverse the reference voltages in the reference voltage value set in an incremental manner to acquire the minimum reference voltage of the electronic device;

以递减的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最大参考电压；Traverse the reference voltages in the reference voltage value set in a decreasing manner to obtain the maximum reference voltage of the electronic device;

确定模块，用于根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压。A determination module, configured to determine the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device.

第三方面，本发明实施例提供了一种参考电压确定装置，包括处理器和用于存储能够在处理器上运行的计算机程序的存储器；其中，所述处理器用于运行所述计算机程序时，执行上述方法的步骤。In a third aspect, an embodiment of the present invention provides an apparatus for determining a reference voltage, including a processor and a memory for storing a computer program that can be executed on the processor; wherein, when the processor is configured to run the computer program, Perform the steps of the above method.

第四方面，本发明实施例提供了一种存储介质，其上存储有计算机程序，所述计算机程序被处理器执行时实现上述方法的步骤。In a fourth aspect, an embodiment of the present invention provides a storage medium on which a computer program is stored, and when the computer program is executed by a processor, the steps of the above method are implemented.

本发明实施例提供的参考电压确定方法、装置及存储介质，能够以递增的方式遍历参考电压值集合中的参考电压，获取电子设备的最小参考电压；以递减的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最大参考电压；根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压。采用本发明的方法，通过参考电压递增的方式获取电子设备的最小参考电压，以及参考电压递减的方式获取所述电子设备的最大参考电压，使得基于最小参考电压和最大参考电压所确定的参考电压能够适应不同外界环境带来的影响，避免参考电压边界不稳定的问题，使得参考电压数值更加准确，从而提高电子设备的系统稳定性。The reference voltage determination method, device, and storage medium provided by the embodiments of the present invention can traverse the reference voltages in the reference voltage value set in an incremental manner to obtain the minimum reference voltage of the electronic device; traverse the reference voltage value set in a decreasing manner. The reference voltage is to obtain the maximum reference voltage of the electronic device; the reference voltage of the electronic device is determined according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device. Using the method of the present invention, the minimum reference voltage of the electronic device is obtained by increasing the reference voltage, and the maximum reference voltage of the electronic device is obtained by decreasing the reference voltage, so that the reference voltage determined based on the minimum reference voltage and the maximum reference voltage is obtained. It can adapt to the influence of different external environments, avoid the problem of unstable reference voltage boundary, make the reference voltage value more accurate, and improve the system stability of electronic equipment.

附图说明Description of drawings

图1为本发明实施例提供的一种参考电压确定方法的流程示意图；1 is a schematic flowchart of a method for determining a reference voltage according to an embodiment of the present invention;

图2为本发明实施例提供的一种DDR4存储器的PHY_VREF_Training的流程示意图；FIG. 2 is a schematic flowchart of PHY_VREF_Training of a DDR4 memory according to an embodiment of the present invention;

图3为本发明实施例提供的一种获取电子设备的最小参考电压的流程示意图；3 is a schematic flowchart of obtaining a minimum reference voltage of an electronic device according to an embodiment of the present invention;

图4为本发明实施例提供的一种获取电子设备的最大参考电压的流程示意图；4 is a schematic flowchart of obtaining a maximum reference voltage of an electronic device according to an embodiment of the present invention;

图5为本发明实施例提供的一种参考电压确定装置的结构示意图；5 is a schematic structural diagram of an apparatus for determining a reference voltage according to an embodiment of the present invention;

图6为本发明实施例提供的一种获取单元的结构示意图；6 is a schematic structural diagram of an acquisition unit according to an embodiment of the present invention;

图7为本发明实施例提供的另一种参考电压确定装置的结构示意图。FIG. 7 is a schematic structural diagram of another apparatus for determining a reference voltage according to an embodiment of the present invention.

具体实施方式Detailed ways

下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.

实施例一Example 1

本发明实施例一提供了一种参考电压确定方法,如图1所示，所述方法包括以下步骤：Embodiment 1 of the present invention provides a method for determining a reference voltage. As shown in FIG. 1 , the method includes the following steps:

步骤S101：以递增的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最小参考电压。Step S101: Traverse the reference voltages in the reference voltage value set in an incremental manner to obtain the minimum reference voltage of the electronic device.

在本发明实施例中，将所述参考电压值集合中的参考电压按照电压值大小的升序进行排列，从所述参考电压值集合中的第一个参考电压(即所述参考电压值集合中的最小参考电压)开始，对所述电子设备进行读写校验；读写校验成功时，确定第一个参考电压为所述电子设备的最小参考电压；读写校验失败时，基于所述参考电压值集合中的第二个参考电压，对所述电子设备进行读写校验，直至读写校验成功；将读写校验成功对应的参考电压确定为所述电子设备的最小参考电压。In this embodiment of the present invention, the reference voltages in the reference voltage value set are arranged in ascending order of voltage values, starting from the first reference voltage in the reference voltage value set (that is, in the reference voltage value set When the read and write verification is successful, determine the first reference voltage to be the minimum reference voltage of the electronic device; when the read and write verification fails, based on the The second reference voltage in the set of reference voltage values is used to perform read and write verification on the electronic device until the read and write verification is successful; the reference voltage corresponding to the successful read and write verification is determined as the minimum reference of the electronic device. Voltage.

在具体实施时，可以以DDR4存储器的颗粒参考电压训练(DRAM_VREF_Training)为例，对本发明实施例的技术方案进行具体描述。During specific implementation, the technical solutions of the embodiments of the present invention may be described in detail by taking the particle reference voltage training (DRAM_VREF_Training) of the DDR4 memory as an example.

如图3所示，获取DDR4存储器的颗粒最小参考电压(DRAM_VREF_Min)，即步骤S101具体可以通过以下过程实现：As shown in FIG. 3 , obtaining the minimum reference voltage (DRAM_VREF_Min) of the DDR4 memory, that is, step S101 can be specifically implemented through the following process:

步骤S1011：将参考电压值集合中的最小参考电压设置为所述电子设备的临时参考电压。Step S1011: Set the minimum reference voltage in the reference voltage value set as the temporary reference voltage of the electronic device.

在具体实施时，DDR4控制器可以将DDR4存储器的临时颗粒参考电压(DRAM_VREF_Temp)设置为参考电压值集合中的可设置的最小参考电压；举例来说，当参考电压值为0x0～0x3f，可设置的参考电压值为x～y时，且x大于0x0，y小于0x3f；可以理解为，参考电压值的有效范围为x～y，其中，而0x0～x和y～0x3f就保留不使用；此时，可设置的最小参考电压为x；During specific implementation, the DDR4 controller can set the temporary granular reference voltage (DRAM_VREF_Temp) of the DDR4 memory to the minimum reference voltage that can be set in the reference voltage value set; for example, when the reference voltage value is 0x0-0x3f, it can be set When the reference voltage value is x to y, and x is greater than 0x0, and y is less than 0x3f; it can be understood that the valid range of the reference voltage value is x to y, and 0x0 to x and y to 0x3f are reserved and unused; this , the minimum reference voltage that can be set is x;

又例如，当参考电压值为0x0～0x3f，且0x0～0x3f均为可设置的参考电压值时，可设置的最小参考电压为0x0。For another example, when the reference voltage values are 0x0˜0x3f, and 0x0˜0x3f are all settable reference voltage values, the minimum settable reference voltage is 0x0.

需要说明的是，DDR4的电压一般为1.2V，参考电压范围通常是DDR4电压的45％到92％，根据DDR4的标准协议，可以采用0x0～0x3f的数值与参考电压的具体数值对应。其中，0x0～0x3f对应的数值越大，参考电压的具体数值越大。It should be noted that the voltage of DDR4 is generally 1.2V, and the reference voltage range is usually 45% to 92% of the DDR4 voltage. According to the standard protocol of DDR4, the value of 0x0 to 0x3f can be used to correspond to the specific value of the reference voltage. Among them, the larger the value corresponding to 0x0~0x3f, the larger the specific value of the reference voltage.

步骤S1012：对所述电子设备进行读写校验。Step S1012: Perform read-write verification on the electronic device.

通过DDR4控制器对DDR4存储器进行数据读写校验，若读写数据一致，则读写校验成功，表示对应的DRAM_VREF_Temp值是可用的，执行步骤S1013；若读写数据不一致，则读写校验失败，表示对应的DRAM_VREF_Temp值是不可用的，将DRAM_VREF_Temp值加1，执行步骤S1012。The DDR4 memory is used to perform data read and write verification on the DDR4 memory. If the read and write data are consistent, the read and write verification is successful, indicating that the corresponding DRAM_VREF_Temp value is available, and step S1013 is executed; if the read and write data is inconsistent, the read and write verification is performed. If the verification fails, indicating that the corresponding DRAM_VREF_Temp value is unavailable, the DRAM_VREF_Temp value is incremented by 1, and step S1012 is executed.

步骤S1013：将读写校验成功对应的临时参考电压确定为所述电子设备的最小参考电压。Step S1013: Determine the temporary reference voltage corresponding to the successful read and write verification as the minimum reference voltage of the electronic device.

在具体实施时，DDR4控制器将DRAM_VREF_Temp值确定为DRAM_VREF_Min。In a specific implementation, the DDR4 controller determines the DRAM_VREF_Temp value as DRAM_VREF_Min.

步骤S102：以递减的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最大参考电压。Step S102: Traverse the reference voltages in the reference voltage value set in a decreasing manner to obtain the maximum reference voltage of the electronic device.

本发明实施例中，将所述参考电压值集合中的参考电压按照电压值大小的降序进行排列，从所述参考电压值集合中的最后一个参考电压(即所述参考电压值集合中的最大参考电压)开始，对所述电子设备进行读写校验；读写校验成功时，确定最后一个参考电压为所述电子设备的最大参考电压；读写校验失败时，基于所述参考电压值集合中的倒数第二个参考电压，对所述电子设备进行读写校验，直至读写校验成功；将读写校验成功对应的参考电压确定为所述电子设备的最大参考电压。In this embodiment of the present invention, the reference voltages in the reference voltage value set are arranged in descending order of voltage values, starting from the last reference voltage in the reference voltage value set (that is, the largest reference voltage value in the reference voltage value set). reference voltage), perform read-write verification on the electronic device; when the read-write verification is successful, determine that the last reference voltage is the maximum reference voltage of the electronic device; when the read-write verification fails, based on the reference voltage The penultimate reference voltage in the value set is used to perform read-write verification on the electronic device until the read-write verification is successful; the reference voltage corresponding to the successful read-write verification is determined as the maximum reference voltage of the electronic device.

在具体实施时，如图4所示，以获取DDR4存储器的颗粒最大参考电压(DRAM_VREF_Max)为例，步骤S102具体可以通过以下过程实现：In specific implementation, as shown in FIG. 4 , taking the acquisition of the maximum reference voltage (DRAM_VREF_Max) of the DDR4 memory as an example, step S102 can be specifically implemented through the following process:

步骤S1021：将参考电压值集合中的最大参考电压设置为所述存储器的临时参考电压值。Step S1021: Set the maximum reference voltage in the reference voltage value set as the temporary reference voltage value of the memory.

在具体实施时，DDR4控制器可以将DDR4存储器的DRAM_VREF_Temp设置为参考电压值集合中的可设置的最大参考电压；举例来说，当参考电压值为0x0～0x3f，可设置的参考电压值为x～y时，且x大于0x0，y小于0x3f；可以理解为，参考电压值的有效范围为x～y，其中，而0x0～x和y～0x3f就保留不使用；此时，可设置的最大参考电压为y；During specific implementation, the DDR4 controller can set the DRAM_VREF_Temp of the DDR4 memory to the maximum reference voltage that can be set in the reference voltage value set; for example, when the reference voltage value is 0x0-0x3f, the settable reference voltage value is x ～y, and x is greater than 0x0, and y is less than 0x3f; it can be understood that the valid range of the reference voltage value is x～y, and 0x0～x and y～0x3f are reserved and unused; at this time, the maximum value that can be set The reference voltage is y;

又例如，当参考电压值为0x0～0x3f，且0x0～0x3f均为可设置的参考电压值时，可设置的最大参考电压为0x3f。For another example, when the reference voltage values are 0x0-0x3f, and 0x0-0x3f are all settable reference voltage values, the maximum reference voltage that can be set is 0x3f.

需要说明的是，DDR4的电压一般为1.2V，参考电压范围通常是DDR4电压的45％到92％，根据DDR4的标准协议，可以采用0x0～0x3f的数值与参考电压的具体数值对应。其中，0x0～0x3f对应的数值越大，参考电压的具体数值越大。It should be noted that the voltage of DDR4 is generally 1.2V, and the reference voltage range is usually 45% to 92% of the DDR4 voltage. According to the standard protocol of DDR4, the value of 0x0 to 0x3f can be used to correspond to the specific value of the reference voltage. Among them, the larger the value corresponding to 0x0~0x3f, the larger the specific value of the reference voltage.

步骤S1022：对所述电子设备进行读写校验。Step S1022: Perform read-write verification on the electronic device.

通过DDR4控制器对DDR4存储器进行数据读写校验，若读写数据一致，则读写校验成功，表示对应的DRAM_VREF_Temp值是可用的，执行步骤S1023；若读写数据不一致，则读写校验失败，表示对应的DRAM_VREF_Temp值是不可用的，将DRAM_VREF_Temp值减1，执行步骤S1022。The DDR4 memory is used to perform data read and write verification on the DDR4 memory. If the read and write data are consistent, the read and write verification is successful, indicating that the corresponding DRAM_VREF_Temp value is available, and step S1023 is executed; if the read and write data is inconsistent, the read and write verification is performed. If the verification fails, indicating that the corresponding DRAM_VREF_Temp value is unavailable, the DRAM_VREF_Temp value is decremented by 1, and step S1022 is executed.

步骤S1023：将读写校验成功对应的临时参考电压确定为所述电子设备的最大参考电压。Step S1023: Determine the temporary reference voltage corresponding to the successful read-write verification as the maximum reference voltage of the electronic device.

在具体实施时，DDR4控制器将DRAM_VREF_Temp值确定为DRAM_VREF_Max。In a specific implementation, the DDR4 controller determines the DRAM_VREF_Temp value as DRAM_VREF_Max.

步骤S103：根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压。Step S103: Determine the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device.

本发明实施例中，所述根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压，包括：将所述电子设备的最小参考电压和所述电子设备的最大参考电压的平均值确定为所述电子设备的参考电压。In this embodiment of the present invention, the determining the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device includes: combining the minimum reference voltage of the electronic device with the electronic device's minimum reference voltage The average value of the maximum reference voltage of the device is determined as the reference voltage of the electronic device.

在具体实施时，以DDR4存储器的颗粒参考电压训练(DRAM_VREF_Training)为例，通常将上述步骤中获得的DRAM_VREF_Min与DRAM_VREF_Max的平均值确定为DDR4存储器的颗粒参考电压(DRAM_VREF)，即DRAM_VREF＝(DRAM_VREF_Min+DRAM_VREF_Max)/2。In specific implementation, taking the particle reference voltage training (DRAM_VREF_Training) of DDR4 memory as an example, the average value of DRAM_VREF_Min and DRAM_VREF_Max obtained in the above steps is usually determined as the particle reference voltage (DRAM_VREF) of DDR4 memory, that is, DRAM_VREF=(DRAM_VREF_Min+ DRAM_VREF_Max)/2.

采用本发明实施例的方法，通过参考电压递增的方式获取电子设备的最小参考电压，以及参考电压递减的方式获取所述电子设备的最大参考电压，使得基于最小参考电压和最大参考电压所确定的参考电压能够适应不同外界环境带来的影响，避免参考电压边界不稳定的问题，使得参考电压数值更加准确，从而提高电子设备的系统稳定性。Using the method of the embodiment of the present invention, the minimum reference voltage of the electronic device is obtained by increasing the reference voltage, and the maximum reference voltage of the electronic device is obtained by decreasing the reference voltage, so that the voltage determined based on the minimum reference voltage and the maximum reference voltage is obtained. The reference voltage can adapt to the influence of different external environments, avoid the problem of unstable reference voltage boundary, make the reference voltage value more accurate, and improve the system stability of the electronic device.

实施例二Embodiment 2

本发明实施例二提供了一种参考电压确定方法,如图1所示，所述方法包括以下步骤：Embodiment 2 of the present invention provides a method for determining a reference voltage, as shown in FIG. 1 , the method includes the following steps:

步骤S101：以递增的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最小参考电压。Step S101: Traverse the reference voltages in the reference voltage value set in an incremental manner to obtain the minimum reference voltage of the electronic device.

在本发明实施例中，将所述参考电压值集合中的参考电压按照电压值大小的升序进行排列，从所述参考电压值集合中的第一个参考电压(即所述参考电压值集合中的最小参考电压)开始，对所述电子设备进行读写校验；读写校验成功时，确定第一个参考电压为所述电子设备的最小参考电压；读写校验失败时，基于所述参考电压值集合中的第二个参考电压，对所述电子设备进行读写校验，直至读写校验成功；将读写校验成功对应的参考电压确定为所述电子设备的最小参考电压。In this embodiment of the present invention, the reference voltages in the reference voltage value set are arranged in ascending order of voltage values, starting from the first reference voltage in the reference voltage value set (that is, in the reference voltage value set When the read and write verification is successful, determine the first reference voltage to be the minimum reference voltage of the electronic device; when the read and write verification fails, based on the The second reference voltage in the set of reference voltage values is used to perform read and write verification on the electronic device until the read and write verification is successful; the reference voltage corresponding to the successful read and write verification is determined as the minimum reference of the electronic device. Voltage.

在具体实施时，可以以DDR4存储器的物理层参考电压训练(PHY_VREF_Training)为例，对本发明实施例的技术方案进行具体描述。In specific implementation, the technical solutions of the embodiments of the present invention may be described in detail by taking the physical layer reference voltage training (PHY_VREF_Training) of the DDR4 memory as an example.

如图2所示，在进行参考电压训练之前，还包括DDR4存储器的初始化和DDR4存储器的初始化校准；As shown in Figure 2, before the reference voltage training, the initialization of DDR4 memory and the initialization and calibration of DDR4 memory are also included;

所述DDR4存储器的初始化，至少包括下述中的一项：向DDR控制器和PHY写入需要配置的寄存器；启动DDR控制器；以及DDR控制器和PHY的初始化。The initialization of the DDR4 memory includes at least one of the following: writing registers that need to be configured to the DDR controller and the PHY; starting the DDR controller; and initializing the DDR controller and the PHY.

所述DDR4存储器的初始化校准，至少包括下述中的一项：门控训练(GateTraining)、写入校准(Write Leveling)、读取校准(Read Leveling)。The initialization calibration of the DDR4 memory includes at least one of the following: gate training (GateTraining), write calibration (Write Leveling), and read calibration (Read Leveling).

其中，双向数据(Data Input/Output，DQ)是双向数据总线；双向数据选通(DataInput/Output Strobe，DQS)用于控制DQ的方向。Gate Training用于将门控(Gate)信号与DQS对齐；Write Leveling用于将DQS与时钟(CLK)信号对齐；Read Leveling用于将DQS和DQ的位置调整到最佳，例如，ReadLeveling可以在DQS与DQ间产生90°的相位差，使得DQS的边沿可以在DQ的中间位置采样，保证采样数据的有效性，从而使采样窗口达到最佳，ReadLeveling可以采用多种方式来调整DQS和DQ的位置，本发明并未特别限定。The bidirectional data (Data Input/Output, DQ) is a bidirectional data bus; the bidirectional data strobe (DataInput/Output Strobe, DQS) is used to control the direction of the DQ. Gate Training is used to align the gate (Gate) signal with DQS; Write Leveling is used to align the DQS with the clock (CLK) signal; Read Leveling is used to adjust the position of DQS and DQ to the best, for example, ReadLeveling can be used between DQS and DQS There is a 90° phase difference between the DQs, so that the edge of the DQS can be sampled at the middle of the DQ to ensure the validity of the sampled data, so that the sampling window can be optimized. ReadLeveling can use various methods to adjust the position of DQS and DQ, The present invention is not particularly limited.

如图3所示，获取DDR4存储器的物理层最小参考电压(PHY_VREF_Min)，即步骤S101具体可以通过以下过程实现：As shown in Figure 3, obtaining the physical layer minimum reference voltage (PHY_VREF_Min) of the DDR4 memory, that is, step S101 can be specifically implemented through the following process:

步骤S1011：将参考电压值集合中的最小参考电压设置为所述电子设备的临时参考电压。Step S1011: Set the minimum reference voltage in the reference voltage value set as the temporary reference voltage of the electronic device.

在具体实施时，DDR4控制器可以将DDR4存储器的临时物理层参考电压(PHY_VREF_Temp)设置为参考电压值集合中的可设置的最小参考电压；举例来说，当参考电压值为0x0～0x3f，可设置的参考电压值为x～y时，且x大于0x0，y小于0x3f；可以理解为，参考电压值的有效范围为x～y，其中，而0x0～x和y～0x3f就保留不使用；此时，可设置的最小参考电压为x；During specific implementation, the DDR4 controller may set the temporary physical layer reference voltage (PHY_VREF_Temp) of the DDR4 memory to the minimum reference voltage that can be set in the reference voltage value set; for example, when the reference voltage value is 0x0-0x3f, the When the set reference voltage value is x to y, and x is greater than 0x0 and y is less than 0x3f; it can be understood that the valid range of the reference voltage value is x to y, and 0x0 to x and y to 0x3f are reserved for use; At this time, the minimum reference voltage that can be set is x;

又例如，当参考电压值为0x0～0x3f，且0x0～0x3f均为可设置的参考电压值时，可设置的最小参考电压为0x0。For another example, when the reference voltage values are 0x0˜0x3f, and 0x0˜0x3f are all settable reference voltage values, the minimum settable reference voltage is 0x0.

需要说明的是，DDR4的电压一般为1.2V，参考电压范围通常是DDR4电压的45％到92％，根据DDR4的标准协议，可以采用0x0～0x3f的数值与参考电压的具体数值对应。其中，0x0～0x3f对应的数值越大，参考电压的具体数值越大。It should be noted that the voltage of DDR4 is generally 1.2V, and the reference voltage range is usually 45% to 92% of the DDR4 voltage. According to the standard protocol of DDR4, the value of 0x0 to 0x3f can be used to correspond to the specific value of the reference voltage. Among them, the larger the value corresponding to 0x0~0x3f, the larger the specific value of the reference voltage.

步骤S1012：对所述电子设备进行读写校验。Step S1012: Perform read-write verification on the electronic device.

通过DDR4控制器对DDR4存储器进行数据读写校验，若读写数据一致，则读写校验成功，表示对应的PHY_VREF_Temp值是可用的，执行步骤S1013；若读写数据不一致，则读写校验失败，表示对应的PHY_VREF_Temp值是不可用的，将PHY_VREF_Temp值加1，执行步骤S1012。The DDR4 memory is used to perform data read and write verification on the DDR4 memory. If the read and write data are consistent, the read and write verification is successful, indicating that the corresponding PHY_VREF_Temp value is available, and step S1013 is performed; if the read and write data is inconsistent, the read and write verification is performed. If the verification fails, indicating that the corresponding PHY_VREF_Temp value is unavailable, the PHY_VREF_Temp value is incremented by 1, and step S1012 is executed.

步骤S1013：将读写校验成功对应的临时参考电压确定为所述电子设备的最小参考电压。Step S1013: Determine the temporary reference voltage corresponding to the successful read and write verification as the minimum reference voltage of the electronic device.

在具体实施时，DDR4控制器将PHY_VREF_Temp值确定为PHY_VREF_Min。In a specific implementation, the DDR4 controller determines the PHY_VREF_Temp value as PHY_VREF_Min.

步骤S102：以递减的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最大参考电压。Step S102: Traverse the reference voltages in the reference voltage value set in a decreasing manner to obtain the maximum reference voltage of the electronic device.

本发明实施例中，将所述参考电压值集合中的参考电压按照电压值大小的降序进行排列，从所述参考电压值集合中的最后一个参考电压(即所述参考电压值集合中的最大参考电压)开始，对所述电子设备进行读写校验；读写校验成功时，确定最后一个参考电压为所述电子设备的最大参考电压；读写校验失败时，基于所述参考电压值集合中的倒数第二个参考电压，对所述电子设备进行读写校验，直至读写校验成功；将读写校验成功对应的参考电压确定为所述电子设备的最大参考电压。In this embodiment of the present invention, the reference voltages in the reference voltage value set are arranged in descending order of voltage values, starting from the last reference voltage in the reference voltage value set (that is, the largest reference voltage value in the reference voltage value set). reference voltage), perform read-write verification on the electronic device; when the read-write verification is successful, determine that the last reference voltage is the maximum reference voltage of the electronic device; when the read-write verification fails, based on the reference voltage The penultimate reference voltage in the value set is used to perform read-write verification on the electronic device until the read-write verification is successful; the reference voltage corresponding to the successful read-write verification is determined as the maximum reference voltage of the electronic device.

在具体实施时，如图4所示，以获取DDR4存储器的物理层最大参考电压(PHY_VREF_Max)为例，步骤S102具体可以通过以下过程实现：In specific implementation, as shown in FIG. 4 , taking obtaining the physical layer maximum reference voltage (PHY_VREF_Max) of the DDR4 memory as an example, step S102 can be specifically implemented through the following process:

步骤S1021：将参考电压值集合中的最大参考电压设置为所述电子设备的临时参考电压值。Step S1021: Set the maximum reference voltage in the reference voltage value set as the temporary reference voltage value of the electronic device.

在具体实施时，DDR4控制器可以将DDR4存储器的PHY_VREF_Temp值设置为参考电压值集合中的可设置的最大参考电压；举例来说，当参考电压值为0x0～0x3f，可设置的参考电压值为x～y时，且x大于0x0，y小于0x3f；可以理解为，参考电压值的有效范围为x～y，其中，而0x0～x和y～0x3f就保留不使用；此时，可设置的最大参考电压为y；During specific implementation, the DDR4 controller can set the PHY_VREF_Temp value of the DDR4 memory to the maximum reference voltage that can be set in the reference voltage value set; for example, when the reference voltage value is 0x0-0x3f, the settable reference voltage value is When x~y, and x is greater than 0x0, and y is less than 0x3f; it can be understood that the valid range of the reference voltage value is x~y, and 0x0~x and y~0x3f are reserved and unused; at this time, the settable The maximum reference voltage is y;

又例如，当参考电压值为0x0～0x3f，且0x0～0x3f均为可设置的参考电压值时，可设置的最大参考电压为0x3f。For another example, when the reference voltage values are 0x0-0x3f, and 0x0-0x3f are all settable reference voltage values, the maximum reference voltage that can be set is 0x3f.

需要说明的是，DDR4的电压一般为1.2V，参考电压范围通常是DDR4电压的45％到92％，根据DDR4的标准协议，可以采用0x0～0x3f的数值与参考电压的具体数值对应。其中，0x0～0x3f对应的数值越大，参考电压的具体数值越大。It should be noted that the voltage of DDR4 is generally 1.2V, and the reference voltage range is usually 45% to 92% of the DDR4 voltage. According to the standard protocol of DDR4, the value of 0x0 to 0x3f can be used to correspond to the specific value of the reference voltage. Among them, the larger the value corresponding to 0x0~0x3f, the larger the specific value of the reference voltage.

步骤S1022：对所述电子设备进行读写校验。Step S1022: Perform read-write verification on the electronic device.

通过DDR4控制器对DDR4存储器进行数据读写校验，若读写数据一致，则读写校验成功，表示对应的PHY_VREF_Temp值是可用的，执行步骤S1023；若读写数据不一致，则读写校验失败，表示对应的PHY_VREF_Temp值是不可用的，将PHY_VREF_Temp值减1，执行步骤S1022。The DDR4 controller performs data read and write verification on the DDR4 memory. If the read and write data are consistent, the read and write verification is successful, indicating that the corresponding PHY_VREF_Temp value is available, and step S1023 is performed; if the read and write data is inconsistent, the read and write verification is performed. If the verification fails, indicating that the corresponding PHY_VREF_Temp value is unavailable, the PHY_VREF_Temp value is decremented by 1, and step S1022 is executed.

步骤S1023：将读写校验成功对应的临时参考电压确定为所述电子设备的最大参考电压。Step S1023: Determine the temporary reference voltage corresponding to the successful read-write verification as the maximum reference voltage of the electronic device.

在具体实施时，DDR4控制器将PHY_VREF_Temp值确定为PHY_VREF_Max。In a specific implementation, the DDR4 controller determines the PHY_VREF_Temp value as PHY_VREF_Max.

步骤S103：根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压。Step S103: Determine the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device.

本发明实施例中，所述根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压，包括：将所述电子设备的最小参考电压和所述电子设备的最大参考电压的平均值确定为所述电子设备的参考电压。In this embodiment of the present invention, the determining the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device includes: combining the minimum reference voltage of the electronic device with the electronic device's minimum reference voltage The average value of the maximum reference voltage of the device is determined as the reference voltage of the electronic device.

在具体实施时，以DDR4存储器的PHY_VREF_Training为例，通常将上述步骤中获得的PHY_VREF_Min与PHY_VREF_Max的平均值确定为DDR4存储器的物理层参考电压(PHY_VREF)，即PHY_VREF＝(PHY_VREF_Min+PHY_VREF_Max)/2。In specific implementation, taking PHY_VREF_Training of DDR4 memory as an example, the average value of PHY_VREF_Min and PHY_VREF_Max obtained in the above steps is usually determined as the physical layer reference voltage (PHY_VREF) of DDR4 memory, that is, PHY_VREF=(PHY_VREF_Min+PHY_VREF_Max)/2.

采用本发明实施例的方法，通过参考电压递增的方式获取电子设备的最小参考电压，以及参考电压递减的方式获取所述电子设备的最大参考电压，使得基于最小参考电压和最大参考电压所确定的参考电压能够适应不同外界环境带来的影响，避免参考电压边界不稳定的问题，使得参考电压数值更加准确，从而提高电子设备的系统稳定性。Using the method of the embodiment of the present invention, the minimum reference voltage of the electronic device is obtained by increasing the reference voltage, and the maximum reference voltage of the electronic device is obtained by decreasing the reference voltage, so that the voltage determined based on the minimum reference voltage and the maximum reference voltage is obtained. The reference voltage can adapt to the influence of different external environments, avoid the problem of unstable reference voltage boundary, make the reference voltage value more accurate, and improve the system stability of the electronic device.

实施例三Embodiment 3

本发明实施例三提供了一种参考电压确定方法,如图1所示，所述方法包括以下步骤：Embodiment 3 of the present invention provides a method for determining a reference voltage, as shown in FIG. 1 , the method includes the following steps:

步骤S101：以递增的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最小参考电压。Step S101: Traverse the reference voltages in the reference voltage value set in an incremental manner to obtain the minimum reference voltage of the electronic device.

在本发明实施例中，将所述参考电压值集合中的参考电压按照电压值大小的升序进行排列，从所述参考电压值集合中的第一个参考电压(即所述参考电压值集合中的最小参考电压)开始，对所述电子设备进行读写校验；读写校验成功时，确定第一个参考电压为所述电子设备的最小参考电压；读写校验失败时，基于所述参考电压值集合中的第二个参考电压，对所述电子设备进行读写校验，直至读写校验成功；将读写校验成功对应的参考电压确定为所述电子设备的最小参考电压。In this embodiment of the present invention, the reference voltages in the reference voltage value set are arranged in ascending order of voltage values, starting from the first reference voltage in the reference voltage value set (that is, in the reference voltage value set When the read and write verification is successful, determine the first reference voltage to be the minimum reference voltage of the electronic device; when the read and write verification fails, based on the The second reference voltage in the set of reference voltage values is used to perform read and write verification on the electronic device until the read and write verification is successful; the reference voltage corresponding to the successful read and write verification is determined as the minimum reference of the electronic device. Voltage.

在具体实施时，可以以DDR4存储器的PHY_VREF_Training为例，对本发明实施例的技术方案进行具体描述。During specific implementation, the technical solutions of the embodiments of the present invention may be described in detail by taking the PHY_VREF_Training of the DDR4 memory as an example.

如图2所示，在进行参考电压训练之前，还包括DDR4存储器的初始化和DDR4存储器的初始化校准；As shown in Figure 2, before the reference voltage training, the initialization of DDR4 memory and the initialization and calibration of DDR4 memory are also included;

所述DDR4存储器的初始化，至少包括下述中的一项：向DDR控制器和PHY写入需要配置的寄存器；启动DDR控制器；以及DDR控制器和PHY的初始化。The initialization of the DDR4 memory includes at least one of the following: writing registers that need to be configured to the DDR controller and the PHY; starting the DDR controller; and initializing the DDR controller and the PHY.

所述DDR4存储器的初始化校准，至少包括下述中的一项：Gate Training、WriteLeveling、Read Leveling。The initialization calibration of the DDR4 memory includes at least one of the following: Gate Training, WriteLeveling, and Read Leveling.

其中，DQ是双向数据总线；DQS用于控制DQ的方向。Gate Training用于将Gate信号与DQS对齐；Write Leveling用于将DQS与CLK信号对齐；Read Leveling用于将DQS和DQ的位置调整到最佳，例如，Read Leveling可以在DQS与DQ间产生90°的相位差，使得DQS的边沿可以在DQ的中间位置采样，保证采样数据的有效性，从而使采样窗口达到最佳，ReadLeveling可以采用多种方式来调整DQS和DQ的位置，本发明并未特别限定。Among them, DQ is a bidirectional data bus; DQS is used to control the direction of DQ. Gate Training is used to align Gate signal with DQS; Write Leveling is used to align DQS and CLK signal; Read Leveling is used to adjust the position of DQS and DQ to the best, for example, Read Leveling can generate 90° between DQS and DQ The phase difference of DQS makes the edge of DQS sample at the middle position of DQ to ensure the validity of the sampled data, so that the sampling window can be optimized. ReadLeveling can use various methods to adjust the position of DQS and DQ. limited.

如图3所示，获取DDR4存储器的PHY_VREF_Min，即步骤S101具体可以通过以下过程实现：As shown in Figure 3, obtaining the PHY_VREF_Min of the DDR4 memory, that is, step S101, can be specifically implemented through the following process:

步骤S1011：将参考电压值集合中的最小参考电压设置为所述电子设备的临时参考电压。Step S1011: Set the minimum reference voltage in the reference voltage value set as the temporary reference voltage of the electronic device.

在具体实施时，DDR4控制器可以将DDR4存储器的PHY_VREF_Temp设置为参考电压值集合中的可设置的最小参考电压；举例来说，当参考电压值为0x0～0x3f，可设置的参考电压值为x～y时，且x大于0x0，y小于0x3f；可以理解为，参考电压值的有效范围为x～y，其中，而0x0～x和y～0x3f就保留不使用；此时，可设置的最小参考电压为x；During specific implementation, the DDR4 controller can set the PHY_VREF_Temp of the DDR4 memory to the minimum reference voltage that can be set in the reference voltage value set; for example, when the reference voltage value is 0x0-0x3f, the settable reference voltage value is x ～y, and x is greater than 0x0, and y is less than 0x3f; it can be understood that the valid range of the reference voltage value is x～y, and 0x0～x and y～0x3f are reserved and unused; at this time, the minimum value that can be set The reference voltage is x;

又例如，当参考电压值为0x0～0x3f，且0x0～0x3f均为可设置的参考电压值时，可设置的最小参考电压为0x0。For another example, when the reference voltage values are 0x0˜0x3f, and 0x0˜0x3f are all settable reference voltage values, the minimum settable reference voltage is 0x0.

需要说明的是，DDR4的电压一般为1.2V，参考电压范围通常是DDR4电压的45％到92％，根据DDR4的标准协议，可以采用0x0～0x3f的数值与参考电压的具体数值对应。其中，0x0～0x3f对应的数值越大，参考电压的具体数值越大。It should be noted that the voltage of DDR4 is generally 1.2V, and the reference voltage range is usually 45% to 92% of the DDR4 voltage. According to the standard protocol of DDR4, the value of 0x0 to 0x3f can be used to correspond to the specific value of the reference voltage. Among them, the larger the value corresponding to 0x0~0x3f, the larger the specific value of the reference voltage.

步骤S1012：对所述电子设备进行读写校验。Step S1012: Perform read-write verification on the electronic device.

通过DDR4控制器对DDR4存储器进行数据读写校验，若读写数据一致，则读写校验成功，表示对应的PHY_VREF_Temp值是可用的，执行步骤S1013；若读写数据不一致，则读写校验失败，表示对应的PHY_VREF_Temp值是不可用的，将PHY_VREF_Temp值加1，执行步骤S1012。The DDR4 memory is used to perform data read and write verification on the DDR4 memory. If the read and write data are consistent, the read and write verification is successful, indicating that the corresponding PHY_VREF_Temp value is available, and step S1013 is performed; if the read and write data is inconsistent, the read and write verification is performed. If the verification fails, indicating that the corresponding PHY_VREF_Temp value is unavailable, the PHY_VREF_Temp value is incremented by 1, and step S1012 is executed.

步骤S1013：将读写校验成功对应的临时参考电压确定为所述电子设备的最小参考电压。Step S1013: Determine the temporary reference voltage corresponding to the successful read and write verification as the minimum reference voltage of the electronic device.

在具体实施时，DDR4控制器将PHY_VREF_Temp值确定为PHY_VREF_Min。In a specific implementation, the DDR4 controller determines the PHY_VREF_Temp value as PHY_VREF_Min.

步骤S102：以递减的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最大参考电压。Step S102: Traverse the reference voltages in the reference voltage value set in a decreasing manner to obtain the maximum reference voltage of the electronic device.

本发明实施例中，将所述参考电压值集合中的参考电压按照电压值大小的降序进行排列，从所述参考电压值集合中的最后一个参考电压(即所述参考电压值集合中的最大参考电压)开始，对所述电子设备进行读写校验；读写校验成功时，确定最后一个参考电压为所述电子设备的最大参考电压；读写校验失败时，基于所述参考电压值集合中的倒数第二个参考电压，对所述电子设备进行读写校验，直至读写校验成功；将读写校验成功对应的参考电压确定为所述电子设备的最大参考电压。In this embodiment of the present invention, the reference voltages in the reference voltage value set are arranged in descending order of voltage values, starting from the last reference voltage in the reference voltage value set (that is, the largest reference voltage value in the reference voltage value set). reference voltage), perform read-write verification on the electronic device; when the read-write verification is successful, determine that the last reference voltage is the maximum reference voltage of the electronic device; when the read-write verification fails, based on the reference voltage The penultimate reference voltage in the value set is used to perform read-write verification on the electronic device until the read-write verification is successful; the reference voltage corresponding to the successful read-write verification is determined as the maximum reference voltage of the electronic device.

在具体实施时，如图4所示，以获取DDR4存储器的PHY_VREF_Max为例，步骤S102具体可以通过以下过程实现：During specific implementation, as shown in FIG. 4 , taking obtaining the PHY_VREF_Max of the DDR4 memory as an example, step S102 can be specifically implemented through the following process:

步骤S1021：将参考电压值集合中的最大参考电压设置为所述电子设备的临时参考电压值。Step S1021: Set the maximum reference voltage in the reference voltage value set as the temporary reference voltage value of the electronic device.

在具体实施时，DDR4控制器可以将DDR4存储器的PHY_VREF_Temp值设置为参考电压值集合中的可设置的最大参考电压；举例来说，当参考电压值为0x0～0x3f，可设置的参考电压值为x～y时，且x大于0x0，y小于0x3f；可以理解为，参考电压值的有效范围为x～y，其中，而0x0～x和y～0x3f就保留不使用；此时，可设置的最大参考电压为y；During specific implementation, the DDR4 controller can set the PHY_VREF_Temp value of the DDR4 memory to the maximum reference voltage that can be set in the reference voltage value set; for example, when the reference voltage value is 0x0-0x3f, the settable reference voltage value is When x~y, and x is greater than 0x0, and y is less than 0x3f; it can be understood that the valid range of the reference voltage value is x~y, and 0x0~x and y~0x3f are reserved and unused; at this time, the settable The maximum reference voltage is y;

又例如，当参考电压值为0x0～0x3f，且0x0～0x3f均为可设置的参考电压值时，可设置的最大参考电压为0x3f。For another example, when the reference voltage values are 0x0-0x3f, and 0x0-0x3f are all settable reference voltage values, the maximum reference voltage that can be set is 0x3f.

需要说明的是，DDR4的电压一般为1.2V，参考电压范围通常是DDR4电压的45％到92％，根据DDR4的标准协议，可以采用0x0～0x3f的数值与参考电压的具体数值对应。其中，0x0～0x3f对应的数值越大，参考电压的具体数值越大。It should be noted that the voltage of DDR4 is generally 1.2V, and the reference voltage range is usually 45% to 92% of the DDR4 voltage. According to the standard protocol of DDR4, the value of 0x0 to 0x3f can be used to correspond to the specific value of the reference voltage. Among them, the larger the value corresponding to 0x0~0x3f, the larger the specific value of the reference voltage.

步骤S1022：对所述电子设备进行读写校验。Step S1022: Perform read-write verification on the electronic device.

通过DDR4控制器对DDR4存储器进行数据读写校验，若读写数据一致，则读写校验成功，表示对应的PHY_VREF_Temp值是可用的，执行步骤S1023；若读写数据不一致，则读写校验失败，表示对应的PHY_VREF_Temp值是不可用的，将PHY_VREF_Temp值减1，执行步骤S1022。The DDR4 controller performs data read and write verification on the DDR4 memory. If the read and write data are consistent, the read and write verification is successful, indicating that the corresponding PHY_VREF_Temp value is available, and step S1023 is performed; if the read and write data is inconsistent, the read and write verification is performed. If the verification fails, indicating that the corresponding PHY_VREF_Temp value is unavailable, the PHY_VREF_Temp value is decremented by 1, and step S1022 is executed.

步骤S1023：将读写校验成功对应的临时参考电压确定为所述电子设备的最大参考电压。Step S1023: Determine the temporary reference voltage corresponding to the successful read-write verification as the maximum reference voltage of the electronic device.

在具体实施时，DDR4控制器将PHY_VREF_Temp值确定为PHY_VREF_Max。In a specific implementation, the DDR4 controller determines the PHY_VREF_Temp value as PHY_VREF_Max.

步骤S103：根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压。Step S103: Determine the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device.

本发明实施例中，所述根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压，包括：将所述电子设备的最小参考电压和所述电子设备的最大参考电压的平均值确定为所述电子设备的参考电压。In this embodiment of the present invention, the determining the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device includes: combining the minimum reference voltage of the electronic device with the electronic device's minimum reference voltage The average value of the maximum reference voltage of the device is determined as the reference voltage of the electronic device.

在具体实施时，以DDR4存储器的PHY_VREF_Training为例，通常将上述步骤中获得的PHY_VREF_Min与PHY_VREF_Max的平均值确定为DDR4存储器的PHY_VREF，即PHY_VREF＝(PHY_VREF_Min+PHY_VREF_Max)/2。In specific implementation, taking the PHY_VREF_Training of the DDR4 memory as an example, the average value of PHY_VREF_Min and PHY_VREF_Max obtained in the above steps is usually determined as the PHY_VREF of the DDR4 memory, that is, PHY_VREF=(PHY_VREF_Min+PHY_VREF_Max)/2.

本发明实施例中，所述方法还包括：In the embodiment of the present invention, the method further includes:

步骤S104：基于所述电子设备的参考电压对所述电子设备进行颗粒参考电压训练，以确定所述电子设备的颗粒参考电压。Step S104: Perform particle reference voltage training on the electronic device based on the reference voltage of the electronic device to determine the particle reference voltage of the electronic device.

在具体实施时，经过上述步骤，已经确定出最优的PHY_VREF，根据确定出的PHY_VREF对DDR4存储器进行DRAM_VREF_Training。再次执行一遍DRAM_VREF_Training的原因是由于之前执行DRAM_VREF_Training的结果不是基于最优的PHY_VREF，因而得到的结果也不是最优的。基于最优的PHY_VREF，进行DRAM_VREF_Training，可以确定最优的DRAM_VREF，使DRAM_VREF_Training的结果更加准确可靠。During specific implementation, after the above steps, the optimal PHY_VREF has been determined, and DRAM_VREF_Training is performed on the DDR4 memory according to the determined PHY_VREF. The reason for executing DRAM_VREF_Training again is that the result of executing DRAM_VREF_Training before is not based on the optimal PHY_VREF, so the result is not optimal. Based on the optimal PHY_VREF, DRAM_VREF_Training can be performed to determine the optimal DRAM_VREF, making the result of DRAM_VREF_Training more accurate and reliable.

采用本发明实施例的方法，通过参考电压递增的方式获取电子设备的最小参考电压，以及参考电压递减的方式获取所述电子设备的最大参考电压，使得基于最小参考电压和最大参考电压所确定的参考电压能够适应不同外界环境带来的影响，避免参考电压边界不稳定的问题，使得参考电压数值更加准确，从而提高电子设备的系统稳定性。Using the method of the embodiment of the present invention, the minimum reference voltage of the electronic device is obtained by increasing the reference voltage, and the maximum reference voltage of the electronic device is obtained by decreasing the reference voltage, so that the voltage determined based on the minimum reference voltage and the maximum reference voltage is obtained. The reference voltage can adapt to the influence of different external environments, avoid the problem of unstable reference voltage boundary, make the reference voltage value more accurate, and improve the system stability of the electronic device.

实施例四Embodiment 4

本发明实施例四提供了一种参考电压确定装置50,如图5所示，所述参考电压确定装置50包括：获取单元501和第一确定单元502；其中，Embodiment 4 of the present invention provides a reference voltage determination device 50. As shown in FIG. 5, the reference voltage determination device 50 includes: an acquisition unit 501 and a first determination unit 502; wherein,

所述获取单元501，用于以递增的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最小参考电压。The obtaining unit 501 is configured to traverse the reference voltages in the reference voltage value set in an incremental manner to obtain the minimum reference voltage of the electronic device.

在本发明实施例中，将所述参考电压值集合中的参考电压按照电压值大小的升序进行排列，从所述参考电压值集合中的第一个参考电压(即所述参考电压值集合中的最小参考电压)开始，对所述电子设备进行读写校验；读写校验成功时，确定第一个参考电压为所述电子设备的最小参考电压；读写校验失败时，基于所述参考电压值集合中的第二个参考电压，对所述电子设备进行读写校验，直至读写校验成功；将读写校验成功对应的参考电压确定为所述电子设备的最小参考电压。In this embodiment of the present invention, the reference voltages in the reference voltage value set are arranged in ascending order of voltage values, starting from the first reference voltage in the reference voltage value set (that is, in the reference voltage value set When the read and write verification is successful, determine the first reference voltage to be the minimum reference voltage of the electronic device; when the read and write verification fails, based on the The second reference voltage in the set of reference voltage values is used to perform read and write verification on the electronic device until the read and write verification is successful; the reference voltage corresponding to the successful read and write verification is determined as the minimum reference of the electronic device. Voltage.

在具体实施时，可以以DDR4存储器的PHY_VREF_Training为例，对本发明实施例的技术方案进行具体描述。During specific implementation, the technical solutions of the embodiments of the present invention may be described in detail by taking the PHY_VREF_Training of the DDR4 memory as an example.

如图2所示，在进行参考电压训练之前，还包括DDR4存储器的初始化和DDR4存储器的初始化校准；As shown in Figure 2, before the reference voltage training, the initialization of DDR4 memory and the initialization and calibration of DDR4 memory are also included;

所述DDR4存储器的初始化，至少包括下述中的一项：向DDR控制器和PHY写入需要配置的寄存器；启动DDR控制器；以及DDR控制器和PHY的初始化。The initialization of the DDR4 memory includes at least one of the following: writing registers that need to be configured to the DDR controller and the PHY; starting the DDR controller; and initializing the DDR controller and the PHY.

所述DDR4存储器的初始化校准，至少包括下述中的一项：Gate Training、WriteLeveling、Read Leveling。The initialization calibration of the DDR4 memory includes at least one of the following: Gate Training, WriteLeveling, and Read Leveling.

其中，DQ是双向数据总线；DQS用于控制DQ的方向。Gate Training用于将Gate信号与DQS对齐；Write Leveling用于将DQS与CLK信号对齐；Read Leveling用于将DQS和DQ的位置调整到最佳，例如，Read Leveling可以在DQS与DQ间产生90°的相位差，使得DQS的边沿可以在DQ的中间位置采样，保证采样数据的有效性，从而使采样窗口达到最佳，ReadLeveling可以采用多种方式来调整DQS和DQ的位置，本发明并未特别限定。Among them, DQ is a bidirectional data bus; DQS is used to control the direction of DQ. Gate Training is used to align Gate signal with DQS; Write Leveling is used to align DQS and CLK signal; Read Leveling is used to adjust the position of DQS and DQ to the best, for example, Read Leveling can generate 90° between DQS and DQ The phase difference of DQS makes the edge of DQS sample at the middle position of DQ to ensure the validity of the sampled data, so that the sampling window can be optimized. ReadLeveling can use various methods to adjust the position of DQS and DQ. limited.

如图6所示，以获取DDR4存储器的PHY_VREF_Min为例，所述获取单元501具体可以包括：设置模块5011、校验模块5012和确定模块5013，其中，所述设置模块5011，用于将参考电压值集合中的最小参考电压设置为所述电子设备的临时参考电压。As shown in FIG. 6 , taking obtaining the PHY_VREF_Min of the DDR4 memory as an example, the obtaining unit 501 may specifically include: a setting module 5011 , a verification module 5012 and a determination module 5013 , wherein the setting module 5011 is used to set the reference voltage The smallest reference voltage in the set of values is set as the temporary reference voltage for the electronic device.

在具体实施时，DDR4控制器可以将DDR4存储器的PHY_VREF_Temp设置为参考电压值集合中的可设置的最小参考电压；举例来说，当参考电压值为0x0～0x3f，可设置的参考电压值为x～y时，且x大于0x0，y小于0x3f；可以理解为，参考电压值的有效范围为x～y，其中，而0x0～x和y～0x3f就保留不使用；此时，可设置的最小参考电压为x；During specific implementation, the DDR4 controller can set the PHY_VREF_Temp of the DDR4 memory to the minimum reference voltage that can be set in the reference voltage value set; for example, when the reference voltage value is 0x0-0x3f, the settable reference voltage value is x ～y, and x is greater than 0x0, and y is less than 0x3f; it can be understood that the valid range of the reference voltage value is x～y, and 0x0～x and y～0x3f are reserved and unused; at this time, the minimum value that can be set The reference voltage is x;

又例如，当参考电压值为0x0～0x3f，且0x0～0x3f均为可设置的参考电压值时，可设置的最小参考电压为0x0。For another example, when the reference voltage values are 0x0˜0x3f, and 0x0˜0x3f are all settable reference voltage values, the minimum settable reference voltage is 0x0.

需要说明的是，DDR4的电压一般为1.2V，参考电压范围通常是DDR4电压的45％到92％，根据DDR4的标准协议，可以采用0x0～0x3f的数值与参考电压的具体数值对应。其中，0x0～0x3f对应的数值越大，参考电压的具体数值越大。It should be noted that the voltage of DDR4 is generally 1.2V, and the reference voltage range is usually 45% to 92% of the DDR4 voltage. According to the standard protocol of DDR4, the value of 0x0 to 0x3f can be used to correspond to the specific value of the reference voltage. Among them, the larger the value corresponding to 0x0~0x3f, the larger the specific value of the reference voltage.

所述校验模块5012，用于对所述电子设备进行读写校验。The verification module 5012 is used to perform read-write verification on the electronic device.

通过DDR4控制器对DDR4存储器进行数据读写校验，若读写数据一致，则读写校验成功，表示对应的PHY_VREF_Temp值是可用的，执行所述确定模块5013的处理；若读写数据不一致，则读写校验失败，表示对应的PHY_VREF_Temp值是不可用的，将PHY_VREF_Temp值加1，执行所述校验模块5012的处理。The DDR4 memory is used to perform data read and write verification on the DDR4 memory. If the read and write data are consistent, the read and write verification is successful, indicating that the corresponding PHY_VREF_Temp value is available, and the processing of the determining module 5013 is executed; if the read and write data is inconsistent , the read and write verification fails, indicating that the corresponding PHY_VREF_Temp value is unavailable, and the PHY_VREF_Temp value is incremented by 1, and the processing of the verification module 5012 is executed.

所述确定模块5013，用于将读写校验成功对应的临时参考电压确定为所述电子设备的最小参考电压。The determining module 5013 is configured to determine the temporary reference voltage corresponding to successful read and write verification as the minimum reference voltage of the electronic device.

在具体实施时，DDR4控制器将PHY_VREF_Temp值确定为PHY_VREF_Min。In a specific implementation, the DDR4 controller determines the PHY_VREF_Temp value as PHY_VREF_Min.

所述获取单元501，还用于以递减的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最大参考电压。The obtaining unit 501 is further configured to traverse the reference voltages in the reference voltage value set in a decreasing manner to obtain the maximum reference voltage of the electronic device.

本发明实施例中，将所述参考电压值集合中的参考电压按照电压值大小的降序进行排列，从所述参考电压值集合中的最后一个参考电压(即所述参考电压值集合中的最大参考电压)开始，对所述电子设备进行读写校验；读写校验成功时，确定最后一个参考电压为所述电子设备的最大参考电压；读写校验失败时，基于所述参考电压值集合中的倒数第二个参考电压，对所述电子设备进行读写校验，直至读写校验成功；将读写校验成功对应的参考电压确定为所述电子设备的最大参考电压。In this embodiment of the present invention, the reference voltages in the reference voltage value set are arranged in descending order of voltage values, starting from the last reference voltage in the reference voltage value set (that is, the largest reference voltage value in the reference voltage value set). reference voltage), perform read-write verification on the electronic device; when the read-write verification is successful, determine that the last reference voltage is the maximum reference voltage of the electronic device; when the read-write verification fails, based on the reference voltage The penultimate reference voltage in the value set is used to perform read-write verification on the electronic device until the read-write verification is successful; the reference voltage corresponding to the successful read-write verification is determined as the maximum reference voltage of the electronic device.

在具体实施时，如图6所示，以获取DDR4存储器的PHY_VREF_Max为例，所述获取单元501具体可以包括：设置模块5011、校验模块5012和确定模块5013，其中，In the specific implementation, as shown in FIG. 6 , taking obtaining the PHY_VREF_Max of the DDR4 memory as an example, the obtaining unit 501 may specifically include: a setting module 5011 , a verification module 5012 and a determination module 5013 , wherein,

所述设置模块5011，还用于将参考电压值集合中的最大参考电压设置为所述电子设备的临时参考电压值。The setting module 5011 is further configured to set the maximum reference voltage in the reference voltage value set as the temporary reference voltage value of the electronic device.

在具体实施时，DDR4控制器可以将DDR4存储器的PHY_VREF_Temp值设置为参考电压值集合中的可设置的最大参考电压；举例来说，当参考电压值为0x0～0x3f，可设置的参考电压值为x～y时，且x大于0x0，y小于0x3f；可以理解为，参考电压值的有效范围为x～y，其中，而0x0～x和y～0x3f就保留不使用；此时，可设置的最大参考电压为y；During specific implementation, the DDR4 controller can set the PHY_VREF_Temp value of the DDR4 memory to the maximum reference voltage that can be set in the reference voltage value set; for example, when the reference voltage value is 0x0-0x3f, the settable reference voltage value is When x~y, and x is greater than 0x0, and y is less than 0x3f; it can be understood that the valid range of the reference voltage value is x~y, and 0x0~x and y~0x3f are reserved and unused; at this time, the settable The maximum reference voltage is y;

又例如，当参考电压值为0x0～0x3f，且0x0～0x3f均为可设置的参考电压值时，可设置的最大参考电压为0x3f。For another example, when the reference voltage values are 0x0-0x3f, and 0x0-0x3f are all settable reference voltage values, the maximum reference voltage that can be set is 0x3f.

需要说明的是，DDR4的电压一般为1.2V，参考电压范围通常是DDR4电压的45％到92％，根据DDR4的标准协议，可以采用0x0～0x3f的数值与参考电压的具体数值对应。其中，0x0～0x3f对应的数值越大，参考电压的具体数值越大。It should be noted that the voltage of DDR4 is generally 1.2V, and the reference voltage range is usually 45% to 92% of the DDR4 voltage. According to the standard protocol of DDR4, the value of 0x0 to 0x3f can be used to correspond to the specific value of the reference voltage. Among them, the larger the value corresponding to 0x0~0x3f, the larger the specific value of the reference voltage.

所述校验模块5012，用于对所述电子设备进行读写校验。The verification module 5012 is used to perform read-write verification on the electronic device.

通过DDR4控制器对DDR4存储器进行数据读写校验，若读写数据一致，则读写校验成功，表示对应的PHY_VREF_Temp值是可用的，执行所述确定模块5013的处理；若读写数据不一致，则读写校验失败，表示对应的PHY_VREF_Temp值是不可用的，将PHY_VREF_Temp值减1，执行所述校验模块5012的处理。The DDR4 memory is used to perform data read and write verification on the DDR4 memory. If the read and write data are consistent, the read and write verification is successful, indicating that the corresponding PHY_VREF_Temp value is available, and the processing of the determining module 5013 is executed; if the read and write data is inconsistent , the read and write verification fails, indicating that the corresponding PHY_VREF_Temp value is unavailable, decrement the PHY_VREF_Temp value by 1, and execute the processing of the verification module 5012 .

所述确定模块5013，还用于将读写校验成功对应的临时参考电压确定为所述电子设备的最大参考电压。The determining module 5013 is further configured to determine the temporary reference voltage corresponding to the successful read-write verification as the maximum reference voltage of the electronic device.

在具体实施时，DDR4控制器将PHY_VREF_Temp值确定为PHY_VREF_Max。In a specific implementation, the DDR4 controller determines the PHY_VREF_Temp value as PHY_VREF_Max.

所述第一确定单元502，用于根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压。The first determining unit 502 is configured to determine the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device.

本发明实施例中，所述根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压，包括：将所述电子设备的最小参考电压和所述电子设备的最大参考电压的平均值确定为所述电子设备的参考电压。In this embodiment of the present invention, the determining the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device includes: combining the minimum reference voltage of the electronic device with the electronic device's minimum reference voltage The average value of the maximum reference voltage of the device is determined as the reference voltage of the electronic device.

在具体实施时，以DDR4存储器的PHY_VREF_Training为例，通常将PHY_VREF_Min与PHY_VREF_Max的平均值确定为DDR4存储器的PHY_VREF，即PHY_VREF＝(PHY_VREF_Min+PHY_VREF_Max)/2。In specific implementation, taking PHY_VREF_Training of DDR4 memory as an example, the average value of PHY_VREF_Min and PHY_VREF_Max is usually determined as PHY_VREF of DDR4 memory, that is, PHY_VREF=(PHY_VREF_Min+PHY_VREF_Max)/2.

本发明实施例中，所述参考电压确定装置50还包括：In this embodiment of the present invention, the reference voltage determination device 50 further includes:

第二确定单元503，用于基于所述电子设备的参考电压对所述电子设备进行颗粒参考电压训练，以确定所述电子设备的颗粒参考电压。The second determining unit 503 is configured to perform particle reference voltage training on the electronic device based on the reference voltage of the electronic device, so as to determine the particle reference voltage of the electronic device.

在具体实施时，经过上述处理，已经确定出最优的PHY_VREF，根据确定出的PHY_VREF对DDR4存储器进行DRAM_VREF_Training。再次执行一遍DRAM_VREF_Training的原因是由于之前执行DRAM_VREF_Training的结果不是基于最优的PHY_VREF，因而得到的结果也不是最优的。基于最优的PHY_VREF，进行DRAM_VREF_Training，可以确定最优的DRAM_VREF，使DRAM_VREF_Training的结果更加准确可靠。During specific implementation, after the above processing, the optimal PHY_VREF has been determined, and DRAM_VREF_Training is performed on the DDR4 memory according to the determined PHY_VREF. The reason for executing DRAM_VREF_Training again is that the result of executing DRAM_VREF_Training before is not based on the optimal PHY_VREF, so the result is not optimal. Based on the optimal PHY_VREF, DRAM_VREF_Training can be performed to determine the optimal DRAM_VREF, making the result of DRAM_VREF_Training more accurate and reliable.

采用本发明实施例的装置，通过参考电压递增的方式获取电子设备的最小参考电压，以及参考电压递减的方式获取所述电子设备的最大参考电压，使得基于最小参考电压和最大参考电压所确定的参考电压能够适应不同外界环境带来的影响，避免参考电压边界不稳定的问题，使得参考电压数值更加准确，从而提高电子设备的系统稳定性。Using the apparatus of the embodiment of the present invention, the minimum reference voltage of the electronic device is obtained by increasing the reference voltage, and the maximum reference voltage of the electronic device is obtained by decreasing the reference voltage, so that the determined value based on the minimum reference voltage and the maximum reference voltage The reference voltage can adapt to the influence of different external environments, avoid the problem of unstable reference voltage boundary, make the reference voltage value more accurate, and improve the system stability of the electronic device.

实施例五Embodiment 5

基于前述的实施例，本发明实施例五还提供了另一种参考电压确定装置70，如图7所示，所述装置包括处理器702和用于存储能够在处理器702上运行的计算机程序的存储器701；其中，所述处理器702用于运行所述计算机程序时，以实现：Based on the foregoing embodiments, Embodiment 5 of the present invention further provides another reference voltage determination apparatus 70. As shown in FIG. 7 , the apparatus includes a processor 702 and a computer program for storing a computer program that can be executed on the processor 702 The memory 701; wherein, when the processor 702 is used to run the computer program, to achieve:

以递增的方式遍历参考电压值集合中的参考电压，获取电子设备的最小参考电压；Traverse the reference voltages in the reference voltage value set in an incremental manner to obtain the minimum reference voltage of the electronic device;

以递减的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最大参考电压；Traverse the reference voltages in the reference voltage value set in a decreasing manner to obtain the maximum reference voltage of the electronic device;

根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压。The reference voltage of the electronic device is determined according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device.

本发明实施例中，所述处理器702以递增的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最小参考电压，包括：In this embodiment of the present invention, the processor 702 traverses the reference voltages in the reference voltage value set in an incremental manner, and obtains the minimum reference voltage of the electronic device, including:

遍历所述参考电压值集合中的参考电压，对所述电子设备进行读写校验；Traverse the reference voltages in the reference voltage value set, and perform read-write verification on the electronic device;

将读写校验成功的第一个参考电压确定为所述电子设备的最小参考电压；Determining the first reference voltage for which the read and write verification is successful as the minimum reference voltage of the electronic device;

其中，所述参考电压值集合按参考电压值大小的升序进行排列。Wherein, the reference voltage value sets are arranged in ascending order of reference voltage values.

本发明实施例中，所述处理器702以递增的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最小参考电压，包括：In this embodiment of the present invention, the processor 702 traverses the reference voltages in the reference voltage value set in an incremental manner, and obtains the minimum reference voltage of the electronic device, including:

基于所述参考电压值集合中的第一个参考电压，对所述电子设备进行读写校验；Based on the first reference voltage in the reference voltage value set, read and write verification is performed on the electronic device;

读写校验成功时，确定第一个参考电压为所述电子设备的最小参考电压；When the read-write verification is successful, determine that the first reference voltage is the minimum reference voltage of the electronic device;

读写校验失败时，基于所述参考电压值集合中的第二个参考电压，对所述电子设备进行读写校验，直至读写校验成功；将读写校验成功对应的参考电压确定为所述电子设备的最小参考电压。When the read-write verification fails, based on the second reference voltage in the reference voltage value set, read-write verification is performed on the electronic device until the read-write verification succeeds; the reference voltage corresponding to the successful read-write verification Determined as the minimum reference voltage for the electronic device.

本发明实施例中，所述处理器702以递减的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最大参考电压，包括：In this embodiment of the present invention, the processor 702 traverses the reference voltages in the reference voltage value set in a decreasing manner to obtain the maximum reference voltage of the electronic device, including:

遍历所述参考电压值集合中的参考电压，对所述电子设备进行读写校验；Traverse the reference voltages in the reference voltage value set, and perform read-write verification on the electronic device;

将读写校验成功的第一个参考电压确定为所述电子设备的最大参考电压；Determining the first reference voltage for which the read and write verification is successful as the maximum reference voltage of the electronic device;

其中，所述参考电压值集合按参考电压值大小的降序进行排列。Wherein, the reference voltage value sets are arranged in descending order of reference voltage values.

本发明实施例中，所述处理器702以递减的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最大参考电压，包括：In this embodiment of the present invention, the processor 702 traverses the reference voltages in the reference voltage value set in a decreasing manner to obtain the maximum reference voltage of the electronic device, including:

基于所述参考电压值集合中的第一个参考电压，对所述电子设备进行读写校验；Based on the first reference voltage in the reference voltage value set, read and write verification is performed on the electronic device;

读写校验成功时，确定第一个参考电压为所述电子设备的最大参考电压；When the read-write verification is successful, determine that the first reference voltage is the maximum reference voltage of the electronic device;

读写校验失败时，基于所述参考电压值集合中的第二个参考电压，对所述电子设备进行读写校验，直至读写校验成功；将读写校验成功对应的参考电压确定为所述电子设备的最大参考电压。When the read-write verification fails, based on the second reference voltage in the reference voltage value set, read-write verification is performed on the electronic device until the read-write verification succeeds; the reference voltage corresponding to the successful read-write verification Determined as the maximum reference voltage for the electronic device.

本发明实施例中，所述处理器702根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压之后，所述方法还包括：In this embodiment of the present invention, after the processor 702 determines the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device, the method further includes:

基于所述电子设备的参考电压对所述电子设备进行颗粒参考电压训练，以确定所述电子设备的颗粒参考电压。The electronic device is subjected to particle reference voltage training based on the reference voltage of the electronic device to determine the particle reference voltage of the electronic device.

本发明实施例中，所述处理器702根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压，包括：In this embodiment of the present invention, the processor 702 determines the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device, including:

将所述电子设备的最小参考电压和所述电子设备的最大参考电压的平均值确定为所述电子设备的参考电压。An average value of the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device is determined as the reference voltage of the electronic device.

所述处理器702可以是一种集成电路芯片，具有信号的处理能力。在实现过程中，上述方法的各步骤可以通过所述处理器702中的硬件的集成逻辑电路或者软件形式的指令完成。上述的所述处理器702可以是通用处理器、DSP，或者其他可编程逻辑器件、分立门或者晶体管逻辑器件、分立硬件组件等。所述处理器702可以实现或者执行本发明实施例中的公开的各方法、步骤及逻辑框图。通用处理器可以是微处理器或者任何常规的处理器等。结合本发明实施例所公开的方法的步骤，可以直接体现为硬件译码处理器执行完成，或者用译码处理器中的硬件及软件模块组合执行完成。软件模块可以位于存储介质中，该存储介质位于存储器701，所述处理器702读取存储器701中的信息，结合其硬件完成前述方法的步骤。The processor 702 may be an integrated circuit chip with signal processing capability. In the implementation process, each step of the above-mentioned method may be completed by an integrated logic circuit of hardware in the processor 702 or an instruction in the form of software. The above-mentioned processor 702 may be a general-purpose processor, a DSP, or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, and the like. The processor 702 may implement or execute the methods, steps, and logical block diagrams disclosed in the embodiments of the present invention. A general purpose processor may be a microprocessor or any conventional processor or the like. The steps of the method disclosed in combination with the embodiments of the present invention can be directly embodied as being executed by a hardware decoding processor, or executed by a combination of hardware and software modules in the decoding processor. The software module may be located in a storage medium, and the storage medium is located in the memory 701, and the processor 702 reads the information in the memory 701, and completes the steps of the foregoing method in combination with its hardware.

可以理解，本发明实施例的存储器(存储器701)可以是易失性存储器或者非易失性存储器，也可包括易失性和非易失性存储器两者。其中，非易失性存储器可以是只读存储器(ROM，Read Only Memory)、可编程只读存储器(PROM，Programmable Read-OnlyMemory)、可擦除可编程只读存储器(EPROM，Erasable Programmable Read-Only Memory)、电可擦除可编程只读存储器(EEPROM，Electrically Erasable Programmable Read-OnlyMemory)、磁性随机存取存储器(FRAM，ferromagnetic random access memory)、快闪存储器(Flash Memory)、磁表面存储器、光盘、或只读光盘(CD-ROM，Compact Disc Read-OnlyMemory)；磁表面存储器可以是磁盘存储器或磁带存储器。易失性存储器可以是随机存取存储器(RAM，Random Access Memory)，其用作外部高速缓存。通过示例性但不是限制性说明，许多形式的RAM可用，例如静态随机存取存储器(SRAM，Static Random Access Memory)、同步静态随机存取存储器(SSRAM，Synchronous Static Random Access Memory)、动态随机存取存储器(DRAM，Dynamic Random Access Memory)、同步动态随机存取存储器(SDRAM，Synchronous Dynamic Random Access Memory)、双倍数据速率同步动态随机存取存储器(DDRSDRAM，Double Data Rate Synchronous Dynamic Random Access Memory)、增强型同步动态随机存取存储器(ESDRAM，Enhanced Synchronous Dynamic Random AccessMemory)、同步连接动态随机存取存储器(SLDRAM，SyncLink Dynamic Random AccessMemory)、直接内存总线随机存取存储器(DRRAM，Direct Rambus Random Access Memory)。本发明实施例描述的存储器旨在包括但不限于这些和任意其它适合类型的存储器。It can be understood that the memory (memory 701 ) in this embodiment of the present invention may be a volatile memory or a nonvolatile memory, and may also include both a volatile memory and a nonvolatile memory. Among them, the non-volatile memory may be a read-only memory (ROM, Read Only Memory), a programmable read-only memory (PROM, Programmable Read-Only Memory), an erasable programmable read-only memory (EPROM, Erasable Programmable Read-Only Memory) Memory), Electrically Erasable Programmable Read-Only Memory (EEPROM, Electrically Erasable Programmable Read-Only Memory), Magnetic Random Access Memory (FRAM, ferromagnetic random access memory), Flash Memory (Flash Memory), Magnetic Surface Memory, Optical Disc , or compact disc read-only memory (CD-ROM, Compact Disc Read-Only Memory); the magnetic surface memory can be a magnetic disk memory or a tape memory. The volatile memory may be random access memory (RAM, Random Access Memory), which is used as an external cache memory. By way of example and not limitation, many forms of RAM are available, such as Static Random Access Memory (SRAM), Synchronous Static Random Access Memory (SSRAM), Dynamic Random Access Memory Memory (DRAM, Dynamic Random Access Memory), Synchronous Dynamic Random Access Memory (SDRAM, Synchronous Dynamic Random Access Memory), Double Data Rate Synchronous Dynamic Random Access Memory (DDRSDRAM, Double Data Rate Synchronous Dynamic Random Access Memory), Enhanced Type Synchronous Dynamic Random Access Memory (ESDRAM, Enhanced Synchronous Dynamic Random Access Memory), Synchronous Link Dynamic Random Access Memory (SLDRAM, SyncLink Dynamic Random Access Memory), Direct Memory Bus Random Access Memory (DRRAM, Direct Rambus Random Access Memory). The memory described in the embodiments of the present invention is intended to include, but not be limited to, these and any other suitable types of memory.

这里需要指出的是：以上媒体播放行为的检测装置实施例项的描述，与上述方法描述是类似的，具有同方法实施例相同的有益效果，因此不做赘述。对于本发明终端实施例中未披露的技术细节，本领域的技术人员请参照本发明方法实施例的描述而理解，为节约篇幅，这里不再赘述。It should be pointed out here that the descriptions of the above embodiments of the apparatus for detecting media playback behavior are similar to the descriptions of the above methods, and have the same beneficial effects as the method embodiments, so they are not repeated. For technical details that are not disclosed in the terminal embodiments of the present invention, those skilled in the art should understand by referring to the description of the method embodiments of the present invention, and to save space, they will not be repeated here.

实施例六Embodiment 6

在示例性实施例中，本发明实施例六还提供了一种存储介质，具体为计算机可读存储介质，例如包括存储计算机程序的存储器701，上述计算机程序可由处理器702处理，以实现：In an exemplary embodiment, Embodiment 6 of the present invention further provides a storage medium, specifically a computer-readable storage medium, for example, including a memory 701 for storing a computer program, and the above-mentioned computer program can be processed by the processor 702 to realize:

本发明实施例中，所述处理器702以递增的方式遍历参考电压值集合中的参考电压，获取电子设备的最小参考电压；In this embodiment of the present invention, the processor 702 traverses the reference voltages in the reference voltage value set in an incremental manner to obtain the minimum reference voltage of the electronic device;

以递减的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最大参考电压；Traverse the reference voltages in the reference voltage value set in a decreasing manner to obtain the maximum reference voltage of the electronic device;

根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压。The reference voltage of the electronic device is determined according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device.

本发明实施例中，所述处理器702以递增的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最小参考电压，包括：In this embodiment of the present invention, the processor 702 traverses the reference voltages in the reference voltage value set in an incremental manner, and obtains the minimum reference voltage of the electronic device, including:

遍历所述参考电压值集合中的参考电压，对所述电子设备进行读写校验；Traverse the reference voltages in the reference voltage value set, and perform read-write verification on the electronic device;

将读写校验成功的第一个参考电压确定为所述电子设备的最小参考电压；Determining the first reference voltage for which the read and write verification is successful as the minimum reference voltage of the electronic device;

其中，所述参考电压值集合按参考电压值大小的升序进行排列。Wherein, the reference voltage value sets are arranged in ascending order of reference voltage values.

本发明实施例中，所述处理器702以递增的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最小参考电压，包括：In this embodiment of the present invention, the processor 702 traverses the reference voltages in the reference voltage value set in an incremental manner, and obtains the minimum reference voltage of the electronic device, including:

基于所述参考电压值集合中的第一个参考电压，对所述电子设备进行读写校验；Based on the first reference voltage in the reference voltage value set, read and write verification is performed on the electronic device;

读写校验成功时，确定第一个参考电压为所述电子设备的最小参考电压；When the read-write verification is successful, determine that the first reference voltage is the minimum reference voltage of the electronic device;

读写校验失败时，基于所述参考电压值集合中的第二个参考电压，对所述电子设备进行读写校验，直至读写校验成功；将读写校验成功对应的参考电压确定为所述电子设备的最小参考电压。When the read-write verification fails, based on the second reference voltage in the reference voltage value set, read-write verification is performed on the electronic device until the read-write verification succeeds; the reference voltage corresponding to the successful read-write verification Determined as the minimum reference voltage for the electronic device.

本发明实施例中，所述处理器702以递减的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最大参考电压，包括：In this embodiment of the present invention, the processor 702 traverses the reference voltages in the reference voltage value set in a decreasing manner to obtain the maximum reference voltage of the electronic device, including:

遍历所述参考电压值集合中的参考电压，对所述电子设备进行读写校验；Traverse the reference voltages in the reference voltage value set, and perform read-write verification on the electronic device;

将读写校验成功的第一个参考电压确定为所述电子设备的最大参考电压；Determining the first reference voltage for which the read and write verification is successful as the maximum reference voltage of the electronic device;

其中，所述参考电压值集合按参考电压值大小的降序进行排列。Wherein, the reference voltage value sets are arranged in descending order of reference voltage values.

本发明实施例中，所述处理器702以递减的方式遍历参考电压值集合中的参考电压，获取所述电子设备的最大参考电压，包括：In this embodiment of the present invention, the processor 702 traverses the reference voltages in the reference voltage value set in a decreasing manner to obtain the maximum reference voltage of the electronic device, including:

基于所述参考电压值集合中的第一个参考电压，对所述电子设备进行读写校验；Based on the first reference voltage in the reference voltage value set, read and write verification is performed on the electronic device;

读写校验成功时，确定第一个参考电压为所述电子设备的最大参考电压；When the read-write verification is successful, determine that the first reference voltage is the maximum reference voltage of the electronic device;

读写校验失败时，基于所述参考电压值集合中的第二个参考电压，对所述电子设备进行读写校验，直至读写校验成功；将读写校验成功对应的参考电压确定为所述电子设备的最大参考电压。When the read-write verification fails, based on the second reference voltage in the reference voltage value set, read-write verification is performed on the electronic device until the read-write verification succeeds; the reference voltage corresponding to the successful read-write verification Determined as the maximum reference voltage for the electronic device.

本发明实施例中，所述处理器702根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压之后，所述方法还包括：In this embodiment of the present invention, after the processor 702 determines the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device, the method further includes:

基于所述电子设备的参考电压对所述电子设备进行颗粒参考电压训练，以确定所述电子设备的颗粒参考电压。The electronic device is subjected to particle reference voltage training based on the reference voltage of the electronic device to determine the particle reference voltage of the electronic device.

本发明实施例中，所述处理器702根据所述电子设备的最小参考电压和所述电子设备的最大参考电压确定所述电子设备的参考电压，包括：In this embodiment of the present invention, the processor 702 determines the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device, including:

将所述电子设备的最小参考电压和所述电子设备的最大参考电压的平均值确定为所述电子设备的参考电压。An average value of the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device is determined as the reference voltage of the electronic device.

所述存储介质可以是FRAM、ROM、PROM、EPROM、EEPROM、Flash Memory、磁表面存储器、光盘、或CD-ROM等存储器。The storage medium may be memory such as FRAM, ROM, PROM, EPROM, EEPROM, Flash Memory, magnetic surface memory, optical disk, or CD-ROM.

这里需要指出的是：以上存储介质实施例项的描述，与上述方法描述是类似的，具有同方法实施例相同的有益效果，因此不做赘述。对于本发明终端实施例中未披露的技术细节，本领域的技术人员请参照本发明方法实施例的描述而理解，为节约篇幅，这里不再赘述。It should be pointed out here that the descriptions of the above storage medium embodiment items are similar to the descriptions of the above-mentioned methods, and have the same beneficial effects as the method embodiments, so they will not be repeated. For technical details that are not disclosed in the terminal embodiments of the present invention, those skilled in the art should understand by referring to the description of the method embodiments of the present invention, and to save space, they will not be repeated here.

需要说明的是：本发明实施例所记载的技术方案之间，在不冲突的情况下，可以任意组合。It should be noted that the technical solutions described in the embodiments of the present invention may be combined arbitrarily unless there is a conflict.

以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention. should be included within the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims (10)

1. A method for reference voltage determination, the method comprising:
traversing reference voltages in the reference voltage value set in an increasing mode to obtain the minimum reference voltage of the electronic equipment;
traversing reference voltages in the reference voltage value set in a descending mode to obtain the maximum reference voltage of the electronic equipment;
determining a reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device.
2. The method of claim 1, wherein incrementally traversing the reference voltages from the set of reference voltage values to obtain a minimum reference voltage for the electronic device comprises:
traversing the reference voltage in the reference voltage value set, and performing read-write verification on the electronic equipment;
determining the first reference voltage which is successfully read-write verified as the minimum reference voltage of the electronic equipment;
the reference voltage value sets are arranged according to the ascending order of the reference voltage values.
3. The method of claim 2, wherein incrementally traversing the reference voltages from the set of reference voltage values to obtain a minimum reference voltage for the electronic device comprises:
performing read-write verification on the electronic equipment based on a first reference voltage in the reference voltage value set;
when the read-write verification is successful, determining a first reference voltage as the minimum reference voltage of the electronic equipment;
when the read-write verification fails, performing the read-write verification on the electronic equipment based on a second reference voltage in the reference voltage value set until the read-write verification is successful; and determining the reference voltage corresponding to the successful read-write verification as the minimum reference voltage of the electronic equipment.
4. The method of claim 1, wherein traversing reference voltages in a set of reference voltage values in a decreasing manner to obtain a maximum reference voltage of the electronic device comprises:
traversing the reference voltage in the reference voltage value set, and performing read-write verification on the electronic equipment;
determining the first reference voltage which is successfully read-write verified as the maximum reference voltage of the electronic equipment;
wherein the reference voltage value sets are arranged in descending order of magnitude of the reference voltage values.
5. The method of claim 4, wherein traversing reference voltages in a set of reference voltage values in a decreasing manner to obtain a maximum reference voltage of the electronic device comprises:
performing read-write verification on the electronic equipment based on a first reference voltage in the reference voltage value set;
when the read-write verification is successful, determining a first reference voltage as the maximum reference voltage of the electronic equipment;
when the read-write verification fails, performing the read-write verification on the electronic equipment based on a second reference voltage in the reference voltage value set until the read-write verification is successful; and determining the reference voltage corresponding to the successful read-write verification as the maximum reference voltage of the electronic equipment.
6. The method of any of claims 1 to 5, wherein after determining the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device, the method further comprises:
performing particle reference voltage training on the electronic device based on a reference voltage of the electronic device to determine a particle reference voltage of the electronic device.
7. The method of any of claims 1 to 5, wherein determining the reference voltage of the electronic device from the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device comprises:
determining an average of a minimum reference voltage of the electronic device and a maximum reference voltage of the electronic device as a reference voltage of the electronic device.
8. An apparatus for reference voltage determination, the apparatus comprising:
the acquisition module is used for traversing reference voltages in a reference voltage value set in an increasing mode to acquire the minimum reference voltage of the electronic equipment;
traversing reference voltages in the reference voltage value set in a descending mode to obtain the maximum reference voltage of the electronic equipment;
the determining module is used for determining the reference voltage of the electronic equipment according to the minimum reference voltage of the electronic equipment and the maximum reference voltage of the electronic equipment.
9. A reference voltage determination apparatus comprising a processor and a memory for storing a computer program capable of running on the processor; wherein the processor is adapted to perform the steps of the method of any one of claims 1 to 7 when running the computer program.
10. A storage medium having a computer program stored thereon, the computer program, when being executed by a processor, performing the steps of the method of any one of claims 1 to 7.
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Application publication date: 20200707