CN112553686A - Ingot casting crucible, crystalline silicon ingot and preparation method thereof, and preparation method of square silicon ingot - Google Patents
Ingot casting crucible, crystalline silicon ingot and preparation method thereof, and preparation method of square silicon ingot Download PDFInfo
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- CN112553686A CN112553686A CN201910851957.XA CN201910851957A CN112553686A CN 112553686 A CN112553686 A CN 112553686A CN 201910851957 A CN201910851957 A CN 201910851957A CN 112553686 A CN112553686 A CN 112553686A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 106
- 239000010703 silicon Substances 0.000 title claims abstract description 106
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 238000005266 casting Methods 0.000 title claims abstract description 67
- 238000002360 preparation method Methods 0.000 title claims abstract description 31
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims description 70
- 239000013078 crystal Substances 0.000 claims abstract description 23
- 238000005520 cutting process Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 27
- 239000011162 core material Substances 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 238000007639 printing Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910000831 Steel Inorganic materials 0.000 claims description 4
- 239000011247 coating layer Substances 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 238000003801 milling Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000010959 steel Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000003466 welding Methods 0.000 abstract description 29
- 238000005452 bending Methods 0.000 abstract description 6
- 239000012634 fragment Substances 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 23
- 239000011265 semifinished product Substances 0.000 description 11
- 239000002210 silicon-based material Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The application provides a preparation method of ingot casting crucible, crystal silicon ingot and preparation method, square silicon ingot, ingot casting crucible, including the crucible body, be located a plurality of groups prefabricated stick in the crucible body, every group prefabricated stick includes a plurality of prefabricated sticks that set up along first straight line interval. According to the invention, a crystal silicon ingot is prepared through an ingot casting crucible, then a square silicon ingot is prepared from the crystal silicon ingot, a silicon wafer prepared from the square silicon ingot is provided with a guide groove, and at least one end of a main grid of a battery piece prepared based on the silicon wafer is provided with a guide groove; a plurality of battery pieces can be connected in series into a battery string by adopting a common welding strip, and at least part of the welding strip is positioned in the guide groove, so that the distance between the adjacent battery pieces can be reduced, more battery pieces can be arranged under the same module type, and the efficiency of the photovoltaic module is improved; meanwhile, the bending degree of the welding strip is reduced, and the probability of fragments is further reduced.
Description
Technical Field
The application relates to the field of photovoltaics, in particular to an ingot casting crucible, a crystalline silicon ingot, a preparation method of the crystalline silicon ingot and a preparation method of a square silicon ingot.
Background
The photovoltaic module has the advantages that the cells are densely arranged, the cell spacing is reduced, and the generating power of the module in unit area can be increased; the current stage mode is splicing or tiling.
According to the tiling technology, the positive electrode and the negative electrode of a battery piece are overlapped and directly connected through conductive adhesive, and the current overlapped area accounts for about 5% of the whole battery area, which means that the power loss of a single battery is 5%.
Compared with the conventional welding strip positive and negative electrode connecting technology, the splicing technology adopts splicing welding strips which are easier to bend at the inter-sheet distance to connect. Although the technology has no loss of overlapping area, the cost of the splicing welding strip is far higher than that of the conventional welding strip, and meanwhile, the assembly series welding process is more complicated in the welding process among different welding strips, and the mass production of the assembly is seriously influenced.
In view of the above, there is a need for a crystalline silicon ingot and a method for preparing the same, so as to prepare a solar cell capable of solving the above-mentioned problems.
Disclosure of Invention
The application aims to provide an ingot casting crucible, a crystalline silicon ingot, a preparation method of the crystalline silicon ingot and a preparation method of a square silicon ingot, which solve the problem from the 4 ends of a silicon wafer so as to prepare a cell piece capable of reducing the piece interval and reducing the cost of a photovoltaic module welding strip by adopting a conventional welding strip.
In order to achieve the purpose of the application, the following technical scheme is adopted in the application:
the utility model provides an ingot casting crucible, includes the crucible body, is located a plurality of groups prefabricated stick in the crucible body, every group prefabricated stick includes a plurality of prefabricated sticks that set up along first straight line interval.
A preparation method of a crystal silicon ingot comprises the following steps:
ingot casting, namely putting a crystalline silicon raw material into the ingot casting crucible, and putting the ingot casting crucible into an ingot casting furnace for ingot casting;
and removing the prefabricated rod to form the crystal silicon ingot with a plurality of prefabricated grooves.
A preparation method of a square silicon ingot comprises the following steps:
preparing a crystalline silicon ingot, preparing the crystalline silicon ingot by adopting the preparation method of the crystalline silicon ingot,
and cutting the silicon crystal ingot at the middle position of the prefabricated groove along the direction vertical to the first straight line and along the extending direction of the prefabricated groove.
A preparation method of a square silicon ingot comprises the following steps:
preparing a crystalline silicon ingot, wherein the crystalline silicon ingot is prepared by adopting the preparation method of the crystalline silicon ingot;
and cutting the silicon crystal ingot at the edge of the prefabricated groove along the extending direction of the prefabricated groove, wherein the edge is parallel to the first straight line.
A preparation method of a square silicon ingot comprises the following steps:
ingot casting, namely putting a crystalline silicon raw material into the ingot casting crucible, and putting the ingot casting crucible into an ingot casting furnace for ingot casting;
cutting the preform at a middle position of the preform in a direction perpendicular to the first linear direction and along the extending direction of the preform;
the preform is removed and a pregroove is formed on the side surface.
A preparation method of a square silicon ingot comprises the following steps:
ingot casting, namely putting a crystalline silicon raw material into the ingot casting crucible, and putting the ingot casting crucible into an ingot casting furnace for ingot casting;
cutting at the edge of the preform rod along the extending direction of the preform rod, wherein the edge is parallel to the first straight line;
the preform is removed and a pregroove is formed on the side surface.
A crystal silicon ingot comprises a plurality of groups of prefabricated grooves, each group of prefabricated grooves comprises a plurality of prefabricated grooves which are arranged at intervals along a third straight line, and the prefabricated grooves penetrate through the crystal silicon ingot along the length direction of the crystal silicon ingot.
The beneficial effect of this application is: according to the invention, a crystal silicon ingot is prepared through an ingot casting crucible, then a square silicon ingot is prepared from the crystal silicon ingot, a silicon wafer prepared from the square silicon ingot is provided with a guide groove, and at least one end of a main grid of a battery piece prepared based on the silicon wafer is provided with a guide groove; a plurality of battery pieces can be connected in series into a battery string by adopting a common welding strip, and at least part of the welding strip is positioned in the guide groove, so that the distance between the adjacent battery pieces can be reduced, more battery pieces can be arranged under the same module type, and the efficiency of the photovoltaic module is improved; meanwhile, the bending degree of the welding strip is reduced, and the probability of fragments is further reduced.
Drawings
FIG. 1 is a schematic structural view of an ingot crucible according to a preferred embodiment of the present application;
FIG. 2 is a cross-sectional view of the ingot crucible of FIG. 1 taken along the direction A-A;
FIG. 3 is an enlarged view of the circled portion of FIG. 2;
FIG. 4 is a schematic view of an ingot crucible in another preferred embodiment of the present application, showing only a portion of the structure of FIG. 2;
FIG. 5 is a cross-sectional view of an ingot crucible in another embodiment of the present application, taken in the direction of A-A in FIG. 1;
FIG. 6 is an enlarged view of the encircled portion of FIG. 5;
FIG. 7 is a schematic structural view of a semi-finished product of a crystalline silicon ingot prepared from the ingot crucible of FIG. 1, with a cut line in dashed lines;
FIG. 8 is a schematic structural view of a crystalline silicon ingot from FIG. 7 after removal of the preform;
FIG. 9 is a top view of FIG. 8;
FIG. 10 is a schematic view of the square ingot formed after slicing in FIG. 8 or FIG. 9;
FIG. 11 is a schematic structural view of a silicon wafer formed by slicing in FIG. 10;
FIG. 12 is a schematic view of a square ingot with a preform on its surface formed by slicing in FIG. 7;
FIG. 13 is a schematic structural view of a semi-finished product of a crystalline silicon ingot prepared from the ingot crucible shown in FIG. 5; the dotted line is a cutting line;
FIG. 14 is a schematic structural view of a crystalline silicon ingot from FIG. 13 after removal of the preform;
FIG. 15 is a schematic view of the square ingot formed after slicing in FIG. 14;
FIG. 16 is a schematic structural view of a silicon wafer formed by slicing in FIG. 15;
FIG. 17 is a structural view of a square ingot with a preform on the surface formed by slicing in FIG. 13;
FIG. 18 is a top view of a square ingot in another embodiment of the present application;
FIG. 19 is a top view of a square ingot in another embodiment of the present application;
FIG. 20 is a top view of a square silicon ingot in another embodiment of the present application;
fig. 21 is a schematic structural diagram of a photovoltaic module formed by a solar cell prepared from a silicon wafer according to a preferred embodiment of the present application.
In the various illustrations of the present application, certain dimensions of structures or portions may be exaggerated relative to other structures or portions for ease of illustration and, thus, are provided to illustrate only the basic structure of the subject matter of the present application.
The manufacturing method comprises the following steps of 1-ingot casting crucible, 11-crucible body, 111-first core material, 112-first silicon nitride coating, 12-prefabricated rod, 121-second core material, 122-second silicon nitride coating, 2-crystalline silicon ingot, 21-square area, 22-prefabricated groove, 2' -crystalline silicon ingot semi-finished product, 3-square silicon ingot, 31-main printing preset area, 32-through groove, 4-silicon wafer, 41-main grid printing area, 42-guide groove, 5-battery piece, 52-guide groove, 6-welding strip and 7-photovoltaic module; l1-first line, L2-second line, L3-third line, L4-fourth line.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
The present application will now be described in detail with reference to specific embodiments thereof as illustrated in the accompanying drawings. These embodiments are not intended to limit the present application, and structural, methodological, or functional changes made by those skilled in the art according to these embodiments are included in the scope of the present application.
Reference to "M and/or N" in this application includes three instances M, N, M and N.
As is well known, a silicon wafer 4 for manufacturing a solar cell is manufactured by a process generally including: ingot casting, square cutting to form a square silicon ingot 3, cutting head and tail, grinding and slicing. In order to obtain a better solar cell, the silicon wafer 4 is improved from the end of the silicon wafer 4 to prepare the required silicon wafer 4. The present invention will be described in detail below with reference to fig. 1 to 20, with reference to an ingot crucible 1, a crystalline silicon ingot and a method for manufacturing the same, a method for manufacturing a square silicon ingot, a silicon wafer 4 manufactured from the square silicon ingot, a cell 5 manufactured from the silicon wafer 4, and a photovoltaic module 7.
Referring to fig. 1 to 6, an ingot casting crucible 1 according to a preferred embodiment of the present invention includes a crucible body 11, and a plurality of sets of preforms 12 disposed in the crucible body 11.
In the embodiment shown in FIG. 1, the crucible body 11 comprises a bottom wall, a peripheral wall extending upwardly from the periphery of the bottom wall; used for containing the crystalline silicon raw material and forming a crystalline silicon ingot in the ingot furnace. Of course, the crucible body 11 may have other shapes. The bottom wall is vertical to the direction of a thermal field of the ingot furnace, and the side wall is parallel to the direction of the thermal field.
Referring to fig. 1 to 6, each of the preforms 12 includes a plurality of preforms 12 spaced along a first line L1.
Generally, the crystalline silicon material forms a crystalline silicon ingot 2 in the ingot casting crucible 1, the crystalline silicon ingot 2 comprises a plurality of square areas for cutting and forming a square silicon ingot 3, and the square areas comprise main printing preset areas for forming main grid printing areas of silicon wafers 4. Each group of the prefabricated bars 12 are correspondingly arranged at the edge forming one square area, a first straight line L1 is an edge line for forming one square area, a plurality of the prefabricated bars 12 arranged along the first straight line L1 are positioned at the first side of the main printing preset area, and the prefabricated bars 12 correspond to the main printing preset area one by one. Or, a plurality of square regions are arranged in the ingot casting crucible 1, the square regions correspond to a plurality of square regions on the formed crystalline silicon ingot 2 one by one, each group of the prefabricated bars 12 is correspondingly arranged at the edge of one square region, and the first straight line L1 is an edge line of the square region.
Preferably, referring to fig. 1 to 4, each group of the preforms 12 further includes a plurality of preforms 12 spaced along a second straight line L2, the first straight line L1 is parallel to the second straight line L2, and the first straight line L1 and the second straight line L2 are spaced along a direction perpendicular to the first straight line L1. And, the second straight line L2 is another edge line for forming one of the square areas; a plurality of the preform rods 12 arranged along a second straight line L2 are located at a second side of the main printed preset area, the first side being opposite to the second side. Or, the second line L2 is another edge line of the square region, and the first line L1 and the second line L2 are respectively located at two opposite sides of the square region.
In addition, in the direction perpendicular to the first straight line L1, the edge lines of two adjacent square areas coincide, that is, one edge line is the second straight line L2 of one square area and the first straight line L1 of the adjacent square area at the same time.
In addition, when each set of preforms 12 includes two rows of preforms 12, each set of preforms 12 has one row of preforms 12 located at a junction between two adjacent square areas, and the two rows of preforms 12 located at the junction are symmetrically disposed without a gap along a direction perpendicular to the first line L1; preferably, two adjacent preforms 12 are unified to enhance the strength of the preforms 12, and when the unified preform is cut in a direction perpendicular to the first line L1, two independent preforms 12 are cut at the middle position of the unified preform, and the two preforms 12 are respectively positioned on two square ingots 3. Accordingly, in the crystalline silicon ingot 2 formed by the ingot casting crucible 1, the integrated preform is removed to form an integrated pre-groove, and after cutting at the middle position of the integrated pre-groove, two independent pre-grooves 22 are formed, wherein the two pre-grooves 22 are respectively positioned on two adjacent square silicon ingots 3.
The cross-sectional shape of the preform 12 is one of a rectangle, a square, a trapezoid, and a semicircle to form the pregroove 22 of different shapes in the crystalline silicon ingot.
The cross-sectional area of the preform 12 is 2mm2～6mm2Can satisfy the mostThe requirements of the guide grooves 42 in the finally formed silicon wafer 4; meanwhile, the area setting range also considers the strength of the prefabricated rod 12, and the prefabricated rod can be ensured not to deviate in the ingot casting process.
The polycrystalline silicon ingot casting process generally comprises the steps of filling a crystalline silicon material into a crucible 1, then placing the crucible 1 into an ingot furnace, heating to melt the crystalline silicon material in the crucible 1 into a silicon liquid, controlling a thermal field to directionally solidify the silicon liquid from the bottom to the top of the crucible, and cooling to obtain a crystalline silicon ingot after all the silicon liquid is crystallized. The prefabricated rod extends along the distribution direction of the thermal field, namely the extending direction of the prefabricated rod is consistent with the solidifying direction of the silicon liquid, and the crystal silicon ingot forms a better crystal phase in the extending direction of the prefabricated rod.
In this embodiment, the preform 12 extends upward from the bottom wall, the height of the preform 12 is H1, the depth of the crucible body 11 is H2, and the difference between H1 and H2 is-5 cm to +2cm, which is convenient for closing the filler and the top cover of the graphite plate.
In addition, the crucible body 11 with prefabricated stick 12 is integrative to be set up, strengthens the crucible body 11 with prefabricated stick 12's joint strength, and can prevent prefabricated stick 12 takes place the offset at the ingot casting in-process.
In one embodiment, as shown in fig. 2 or fig. 5, a portion of the preform is integrally disposed with the bottom wall, another portion of the preform is integrally disposed with both the bottom wall and the peripheral wall, and the preform 12 extends upward from the bottom wall, i.e., the preform 12 is disposed parallel to the peripheral wall. Or in another embodiment, all of the preforms 12 are integral with the bottom wall, and the preforms 12 extend upwardly from the bottom wall.
Of course, the preform rod 12 and the crucible body 11 may be provided separately; preferably, all the preforms 12 form a preform whole by a connecting member, and the preform whole is fixed in the ingot casting crucible 11 by a fixing structure.
Based on any one of the above structures, the softening temperature of the material of the crucible body 11 and the preform rod 12 is higher than 1500 ℃, and is higher than the temperature in the ingot furnace during the ingot casting process, so that the preform rod 12 is not softened during the ingot casting process, and the preform rod 12 can be further prevented from being inclined or being shifted in position, so that after a crystalline silicon ingot is formed, the preform rod 12 extends along the length direction of the crystalline silicon ingot.
Specifically, the material of the crucible body 11 is selected from silicon carbide, silicon nitride or quartz with purity higher than 99.9%, so that the crucible body 11 has higher strength and softening temperature.
Or, the crucible body 11 comprises a first core material 111 and a first silicon nitride coating 112 positioned on the inner surface of the first core material 111, and the material of the first core material 111 is selected from silicon carbide or quartz with purity higher than 99.9%. The term "the inner surface of the first core material 111" means that the surface of the first core material 111 facing the inside of the crucible body 11, and the crystalline silicon material charged into the crucible body 11 directly contacts the first silicon nitride coating layer 112. By arranging the first silicon nitride coating 112, on one hand, oxygen or other impurities in the crucible body 11 can be prevented from entering the silicon crystal ingot in the ingot casting process; on the other hand, removal of the preform 12 is facilitated, facilitating demolding.
The material of preform 12 is selected from silicon carbide, or silicon nitride, or quartz with a purity higher than 99.9%, which ensures that preform 12 has a higher strength and softening temperature.
Alternatively, the preform 12 comprises a second core material 121, a second silicon nitride coating 122 disposed on the outer surface of the second core material 121, and the material of the second core material 121 is selected from silicon carbide or quartz with a purity higher than 99.9%. The term "the outer surface of the second core material 121" means that the second core material 121 faces the inner surface of the crucible body 11, and the crystalline silicon material charged into the crucible body 11 directly contacts the second silicon nitride coating layer 122. By providing the second silicon nitride coating 122, on the one hand, oxygen or other impurities in the preform 12 can be prevented from entering the ingot during ingot casting; on the other hand, removal of the preform 12 is facilitated, facilitating demolding.
The invention also provides a preparation method of the crystal silicon ingot, which comprises the following steps:
ingot casting, namely, putting a crystalline silicon raw material into any one of the ingot casting crucibles 1, and putting the ingot casting crucible 1 into an ingot casting furnace for ingot casting to form a crystalline silicon ingot semi-finished product 2 ' shown in fig. 7 or fig. 13, wherein the preform 12 is positioned on the surface of the crystalline silicon ingot semi-finished product 2 ', and/or the preform 12 is positioned on the outer surface of the crystalline silicon ingot semi-finished product 2 '; in the process, the prefabricated rod 12 does not need to be filled with the crystalline silicon material, so that the crystalline silicon material can be saved;
removing the preform 12 to form a crystalline silicon ingot 2 having a plurality of pregrooves 22 as shown in fig. 6 and 7; specifically, after removing the preform 12, the original position of the preform 12 is hollowed out to form the preform groove 22.
The specific process of removing the preform 12 is to remove the preform 12 along the extending direction of the preform 12 by milling and water jet cutting. Specifically, the specific process of removing the preform 12 by the water jet is to remove the preform 12 by the water jet with 30 to 50 meshes of carborundum and 100 to 200MPa of pressure. The specific process of milling out preform 12 is to use a tool bit with a diameter of 2mm + -0.2 mm and made of synthetic steel or tungsten steel or diamond, and remove preform 12 at a tool bit rotation speed of 10000r/min + -20 r/min.
The application also provides a preparation method of the square silicon ingot, which comprises the following steps:
ingot casting, wherein a crystalline silicon ingot 2 with a prefabricated groove 22 is prepared by adopting any one of the preparation methods of the crystalline silicon ingot;
cutting the silicon ingot 2 at the middle position of the pregroove 22 along the direction perpendicular to the first straight line L1 and along the extending direction of the pregroove 22 by referring to the cutting line shown in fig. 8 or 9 to form a square silicon ingot 3 shown in fig. 10, wherein both side surfaces of the square silicon ingot 3 are provided with through grooves 32 which penetrate through the square silicon ingot 3 along the length direction, and the through grooves 32 are located at both ends of the main print presetting region 31. The pregroove 2 is an integrated pregroove, and after being cut at the middle position, two pregrooves 22 are formed and located on two adjacent square silicon ingots 3. In distinction to this embodiment, the pregroove 22 cut in the middle may also be a pregroove 22 corresponding to only one square ingot 3, and of the two adjacent square ingots 3 formed after cutting, the side surface of one square ingot 3 has a desired pregroove 22, and the side surface of the other square ingot 3 is not planar, but does not form a desired pregroove 22.
Alternatively, referring to the cutting lines shown in fig. 14, the silicon ingot 2 is cut along the extending direction of the preparation groove 22 at the position of the edge of the preparation groove 22, the edge is parallel to the first straight line L1, so as to form the square silicon ingot 3 shown in fig. 15, a through groove 32 penetrating the square silicon ingot 3 along the length direction is formed on one side surface of the square silicon ingot 3, and the through groove 32 is located at one end of the main print presetting area 31.
In the method, the square silicon ingot is directly formed by squaring the crystalline silicon ingot 2 with the prefabricated groove 22, and the squaring specifically adopts a traditional diamond wire squaring machine or a cutting process, which is not described herein again.
When the silicon wafer 4 is adopted to prepare a battery piece, main grids are printed in the main grid printing areas 41 to form the battery piece, wherein at least one end of each main grid is provided with a guide groove 42; when the battery pieces are connected in series into the battery string through the welding strips, on one hand, the welding strips with the yield strength and the shape almost the same as those of the existing welding strips can be used, and compared with the splicing technology, the splicing welding strips with high use cost are avoided, the complicated process of connecting different welding strips is omitted, and the manufacturing cost of the photovoltaic module is reduced; on the other hand, at least part of the solder strip is positioned in the guide groove 42, so that the distance between adjacent battery pieces can be reduced, more battery pieces can be arranged under the same module type, and the efficiency of the photovoltaic module is improved; meanwhile, the bending degree of the welding strip is reduced, and the probability of fragments is further reduced.
The application also provides a preparation method of another square silicon ingot, which comprises the following steps:
ingot casting, namely, putting a crystalline silicon raw material into any one of the ingot casting crucibles 1, and putting the ingot casting crucible 1 into an ingot casting furnace for ingot casting to form a crystalline silicon ingot semi-finished product 2 ' shown in fig. 7 or fig. 13, wherein the preform 12 is positioned on the surface of the crystalline silicon ingot semi-finished product 2 ', or the preform 12 is positioned on the outer surface of the crystalline silicon ingot semi-finished product 2 ';
cutting, with reference to the cutting line shown in fig. 7, the semi-finished silicon ingot 2' is cut along the extending direction of the preform 12 at the middle position of the preform 12 along the direction perpendicular to the first straight line L1, so as to form a square silicon ingot 3 having the preform 12 on the side surfaces of the two ends of the main printed preset region 31 shown in fig. 12; wherein, the prefabricated stick 12 is the above-mentioned integral prefabricated stick, after cutting at its middle position, two prefabricated sticks 12 formed are located on two adjacent square silicon ingots 3 respectively. Different from this embodiment, the preform 12 cut at the intermediate position may be the preform 12 corresponding to only one square ingot 3, and the preform 12 can be formed by removing the preform 12 to form the desired preform groove 22, in two adjacent square ingots 3 formed after cutting, where the side surface of one square ingot 3 has the preform 12; the side surface of the other square ingot 3 also has a portion of the preform, but the preform cannot form the desired pregroove 22.
Alternatively, referring to the cutting lines shown in fig. 13, the semi-finished silicon ingot 2' is cut along the extending direction of the preform 12 at the edge of the preform 12, the edge is parallel to the first line L1, and a square silicon ingot 3 having the preform 12 on the side surface of one end of the main printed predetermined region 31 shown in fig. 17 is formed; removing the preform 12, and forming a through groove 32 on the side surface, wherein the through groove 32 penetrates through the square silicon ingot 3 along the length direction; specifically, the preform 12 on the side surface may be removed by linear cutting, and the specific cutting parameters refer to a conventional evolution process in the art, which is not described herein again.
In the method, the semi-finished product 2 'of the crystalline silicon ingot with the preform 12 is prepared based on any one of the ingot casting crucibles 1, the semi-finished product 2' of the crystalline silicon ingot is firstly cut to enable the preform 12 to be positioned on the surface, and then the preform 12 is removed, so that the process is simple and easy to control; the cutting is performed by a traditional diamond wire cutting machine or a cutting process, which is not described herein again. Moreover, the square silicon ingot 3 prepared by the method has the same structure as the square silicon ingot 3 prepared by the method, and the effect which can be achieved is the same, which is not described herein again.
Referring to fig. 8 to 9, as shown in fig. 14, a crystalline silicon ingot 2 according to a preferred embodiment of the present invention includes a plurality of sets of pregrooves 22, each set of pregrooves 22 includes a plurality of pregrooves 22 spaced apart along a third line, and the pregrooves 22 penetrate through the crystalline silicon ingot 2 along a length direction of the crystalline silicon ingot.
Further, the silicon ingot 2 further comprises a plurality of square regions 21 for forming the square silicon ingot 3, the square regions 21 comprise main printed preset regions 31 for forming main grid printed regions 41 of the silicon wafer 4, each group of the preparation grooves 22 is correspondingly located at the edge of one of the square regions, a third straight line L3 is an edge line for forming one of the square regions 21, and the preparation grooves 22 are located at the end sides of the main printed preset regions 21.
Preferably, referring to fig. 8 to 9, each set of the pregrooves 22 further includes a plurality of pregrooves 22 spaced along a fourth straight line L4, the third straight line L3 is parallel to the fourth straight line L4, the fourth straight line L4 is another edge line forming one of the square regions 21, and the third straight line L3 and the fourth straight line L4 are spaced along a direction perpendicular to the third straight line L3, so as to form the silicon wafer 4 with the guiding grooves 42 at both ends as shown in fig. 11.
In addition, along the direction perpendicular to the third straight line L3, the edge lines of two adjacent square areas coincide, that is, the edge lines are the third straight line L3 of one square area 21 and the fourth straight line L4 of the adjacent square area at the same time.
Further, the sectional shape of the pregroove 22 may be at least one of square, rectangular, trapezoidal, or semicircular.
The width of the prefabricated groove 22 is not less than that of the main printing preset area 31, so that a welding strip can conveniently penetrate through and be welded after a battery piece is formed; the depth of the prefabricated groove 22 is 0.1 cm-2 cm, and the bending degree of the welding strip and the distance between the welding strips can be reduced.
As shown in fig. 21, the edge of the cell 5 prepared from the above silicon wafer 4 has a guiding groove 52, when several cell 5 are connected in series to form a cell string through the solder strip 6 and form the photovoltaic module 7, at least a part of the solder strip 6 is located in the guiding groove 52, so that the distance between adjacent cell 5 can be reduced, more cell 5 can be arranged under the same module type, and the efficiency of the photovoltaic module is improved; and meanwhile, the bending degree of the welding strip 6 is reduced, so that the probability of fragments is reduced.
Referring to the above method for preparing a square silicon ingot and the method for preparing a silicon wafer, the preform 12, the pregroove 22, the through groove 32 of the square silicon ingot 3, the guide groove 42 of the silicon wafer 4, and the guide groove 52 of the cell 5 have the same shape and size.
In summary, the silicon ingot 2 is prepared by the ingot casting crucible 1, the square silicon ingot 3 is prepared by the silicon ingot 2, the silicon wafer 4 prepared by the square silicon ingot is provided with the guide groove 42, and at least one end of the main grid of the cell prepared based on the silicon wafer 4 is provided with the guide groove; a plurality of battery pieces can be connected in series into a battery string by adopting a common welding strip, and at least part of the welding strip is positioned in the guide groove, so that the distance between the adjacent battery pieces can be reduced, more battery pieces can be arranged under the same module type, and the efficiency of the photovoltaic module is improved; meanwhile, the bending degree of the welding strip is reduced, and the probability of fragments is further reduced.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above list of details is only for the concrete description of the feasible embodiments of the present application, they are not intended to limit the scope of the present application, and all equivalent embodiments or modifications that do not depart from the technical spirit of the present application are intended to be included within the scope of the present application.
Claims (23)
1. An ingot casting crucible is characterized by comprising
A crucible body;
and the plurality of groups of prefabricated rods are positioned in the crucible body, and each group of prefabricated rods comprises a plurality of prefabricated rods arranged at intervals along the first straight line.
2. The ingot crucible of claim 1, wherein: each group of the prefabricated rods also comprises a plurality of prefabricated rods arranged at intervals along a second straight line, the first straight line is parallel to the second straight line, and the first straight line and the second straight line are arranged at intervals along the direction perpendicular to the first straight line.
3. The ingot crucible of claim 1, wherein: the cross section of the prefabricated rod is one of a rectangle, a square, a trapezoid and a semicircle.
4. The ingot crucible of claim 1, wherein: the cross-sectional area of the preform is 2mm2～6mm2。
5. The ingot crucible of claim 1, wherein: the crucible body comprises a bottom wall and a peripheral wall extending upwards from the periphery of the bottom wall, the prefabricated rod extends upwards from the bottom wall, the height of the prefabricated rod is H1, the depth of the crucible body is H2, and the difference value between H1 and H2 is-5 cm- +2 cm.
6. The ingot crucible of claim 1, wherein: the crucible body and the preform rod are integrally provided.
7. The ingot crucible of any one of claims 1 to 6, wherein: the softening temperature of the materials of the crucible body and the preform is higher than 1500 ℃.
8. The ingot crucible of claim 7, wherein: the material of the crucible body is selected from silicon carbide, silicon nitride or quartz with the purity higher than 99.9 percent.
9. The ingot crucible of claim 7, wherein: the crucible body comprises a first core material and a first silicon nitride coating layer positioned on the inner surface of the first core material, wherein the material of the first core material is selected from silicon carbide or quartz with the purity higher than 99.9%.
10. The ingot crucible of claim 7, wherein: the material of the preform is selected from silicon carbide or quartz with a purity higher than 99.9%.
11. The ingot crucible of claim 7, wherein: the preform comprises a second core material, a second silicon nitride coating layer arranged on the outer surface of the second core material, and the material of the second core material is selected from silicon carbide or quartz with the purity higher than 99.9%.
12. A preparation method of a crystal silicon ingot is characterized by comprising the following steps:
ingot casting, wherein a crystalline silicon raw material is put into the ingot casting crucible of any one of claims 1-11, and the ingot casting crucible is placed into an ingot casting furnace for ingot casting;
and removing the prefabricated rod to form the crystal silicon ingot with a plurality of prefabricated grooves.
13. The method of preparing a crystalline silicon ingot as set forth in claim 12, wherein: the specific process of removing the prefabricated rod is to remove the prefabricated rod along the extending direction of the prefabricated rod through milling and water cutting processes.
14. The method of preparing a crystalline silicon ingot as set forth in claim 13, wherein: the specific process of removing the prefabricated rod by the water jet is to remove the prefabricated rod by the water jet with 30-50 meshes of carborundum and 100-200 MPa of pressure.
15. The method of preparing a crystalline silicon ingot as set forth in claim 13, wherein: the specific process of milling the prefabricated rod comprises the steps of adopting a cutter head with the diameter of 2mm +/-0.2 mm and made of synthetic steel or tungsten steel or diamond, and removing the prefabricated rod at the rotating speed of the cutter head of 10000r/min +/-20 r/min.
16. The preparation method of the square silicon ingot is characterized by comprising the following steps of:
preparing a crystalline silicon ingot by the method for preparing a crystalline silicon ingot according to any one of claims 12 to 15,
and cutting the silicon crystal ingot at the middle position of the prefabricated groove along the direction vertical to the first straight line and along the extending direction of the prefabricated groove.
17. The preparation method of the square silicon ingot is characterized by comprising the following steps of:
preparing a crystalline silicon ingot by using the crystalline silicon ingot preparation method of any one of claims 12 to 15;
and cutting the silicon crystal ingot at the edge of the prefabricated groove along the extending direction of the prefabricated groove, wherein the edge is parallel to the first straight line.
18. The preparation method of the square silicon ingot is characterized by comprising the following steps of:
ingot casting, wherein a crystalline silicon raw material is put into the ingot casting crucible of any one of claims 1-11, and the ingot casting crucible is placed into an ingot casting furnace for ingot casting;
cutting the preform at a middle position of the preform in a direction perpendicular to the first linear direction and along the extending direction of the preform;
the preform is removed and a through groove is formed on the side surface.
19. The preparation method of the square silicon ingot is characterized by comprising the following steps of:
ingot casting, wherein a crystalline silicon raw material is put into the ingot casting crucible of any one of claims 1-11, and the ingot casting crucible is placed into an ingot casting furnace for ingot casting;
cutting at the edge of the preform rod along the extending direction of the preform rod, wherein the edge is parallel to the first straight line;
the preform is removed and a through groove is formed on the side surface.
20. The crystal silicon ingot is characterized by comprising a plurality of groups of prefabricated grooves, wherein each group of prefabricated grooves comprises a plurality of prefabricated grooves which are arranged at intervals along a third straight line, and the prefabricated grooves penetrate through the crystal silicon ingot along the length direction of the crystal silicon ingot.
21. A crystalline silicon ingot according to claim 20, wherein: each group of the prefabricated grooves further comprises a plurality of prefabricated grooves which are arranged at intervals along a fourth straight line, the third straight line is parallel to the fourth straight line, and the third straight line and the fourth straight line are arranged at intervals.
22. The crystalline silicon ingot of claim 20 or 21, wherein: the silicon ingot further comprises a plurality of square areas used for forming the square silicon ingot, each square area comprises a plurality of main printing preset areas used for forming main grid printing areas of the silicon wafer, each group of prefabricated grooves are located at the edge of one square area, and the prefabricated grooves are located on the end sides of the main printing preset areas.
23. A crystalline silicon ingot according to claim 20, wherein: the cross-sectional shape of the pre-groove is at least one of square, rectangle, trapezoid or semicircle.
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