CN1125533C - 平衡混频器 - Google Patents

平衡混频器 Download PDF

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CN1125533C
CN1125533C CN98103818A CN98103818A CN1125533C CN 1125533 C CN1125533 C CN 1125533C CN 98103818 A CN98103818 A CN 98103818A CN 98103818 A CN98103818 A CN 98103818A CN 1125533 C CN1125533 C CN 1125533C
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frequency
signal
component
phase
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托马斯R·阿佩尔
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M7/00—Conversion of a code where information is represented by a given sequence or number of digits to a code where the same, similar or subset of information is represented by a different sequence or number of digits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1441—Balanced arrangements with transistors using field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
    • H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1433—Balanced arrangements with transistors using bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1458—Double balanced arrangements, i.e. where both input signals are differential
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1475—Subharmonic mixer arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0001—Circuit elements of demodulators
    • H03D2200/0007—Dual gate field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0001—Circuit elements of demodulators
    • H03D2200/0037—Diplexers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0041—Functional aspects of demodulators
    • H03D2200/0043—Bias and operating point

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Superheterodyne Receivers (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)

Abstract

同时对两个输入信号进行混频并提供其输出信号频率为其中一个输入信号频率的两倍的电路，包括一由双输入混频元件形成的推推倍频器。每个输入信号经倒相器连接到倍频器/混频器以提供奇模式输入信号分量。

Description

平衡混频器
技术领域
本发明一般涉及高频转换电路，尤其涉及对多路输入信号频率分量进行混频和倍频的电路。
背景技术
对信号的频率分量进行混频并产生输入信号频率分量的谐波的电路已广为人知。例如，双栅极场效应晶体管(FET)可以对输送到每个栅极的信号的频率分量进行混频，并且非线性器件例如为高度非线性操作偏置的放大器能够用于产生输入信号的频率分量的谐波。
频率混合用在收发信机电路中以将在输入频率(Fin)上的输入信号与本地振荡器信号(LO)混合，从而在中间频率(IF)上形成转换后的信号。
频率转换器(混频器)可以用于将输入信号的频率转换得或高或低。由于这种电路的基本产物除输入信号(Fin和LO)外是和频与差频，所以当期望将频率转换得高时使用该频率和。类似地，将频率转换得低时使用频率差。
如果高转换的IF比Fin高出许多，则很难从中间频率信号滤波出LO，因为IF和LO的频率几乎是一样的。见于这个原因，如果高转换IF比Fin高许多，则益于使用双转换电路。双转换电路采用两个混频器以将两个不同的本地振荡器信号(LO1和LO2)与输入信号混合，从而LO1和LO2都不接近IF。这样，就不难从混合信号中滤出LO1和LO2。
从电路的尺寸来看，更期望单个的LO。通过将LO2频率选作LO1频率的整数倍有可能从一个LO频率源获得双转换电路的优点。LO2由倍频器产生。图2是使用倍频器产生LO2的标准双转换电路的示例图。
在图2中，输入信号接到第一混频器300的一个输入端，产生第一转换信号(LO1)的本地振荡器302的输出端接到第一混频器300的另一输入端。转换后信号的频率等于输入信号与由本地振荡器302产生的第一转换信号的频率和。本地振荡器输出还与输出频率为第一转换信号的两倍的第二转换信号(LO2)的频率倍频电路304相连。第一转换后的信号(IF1)和第二转换信号(LO2)输入到第二混频器306，该第二混频器306产生第二转换后的信号(IF2)，其频率等于输入信号、本地振荡器信号以及双倍本地振荡器信号的频率之和。换言之，双倍转换后的输出信号其频率等于输入信号频率加上3倍的本地振荡器(LO1)频率。这样，图2的系统需要两个混频器300和306以及一个倍频电路304。
由于集成的收发信机元件在用户产品中变得越来越通用，所以对便宜电路元件的需求变得越来越主要。倍频和混频电路的简化对降低元件如蜂窝电话和寻呼接收机的成本是至关重要的。
发明内容
本发明的目的在于提供一单个电路，该电路既用于对一对信号进行混频又用于对该成对信号中的一信号进行倍频，同时抑制输入频率信号(Fin和LO)的输出电平。
按照本发明的一个方面，一推推倍频器为双栅极混频元件，它包括对输入到该元件的信号进行混频的一对栅极。由于混频元件工作在非线性状态，所以自然生成谐波。因此，LO1信号的谐波分量在第一转换混频器电路中是可得到的。
按照本发明的另一个方面，一多工器连接混频器电路的输出以选择经高转换后其频率等于输入信号频率之和的信号和其频率等于LO1输入信号频率两倍的信号。
本发明的其它特征和优点将随着下面的详细描述和附图变得逾加清楚。
附图说明
图1为本发明优先实施例的电路框图；
图2为标准双转换电路的示意图。
具体实施方式
如图1中所示的本发明的第一实施例包括一个以双栅极FET作为混频元件的推推倍频电路。
参照图1，该推推电路混频器10包括第一与第二双栅极FET场效应晶体管12和14。各场效应晶体管FET的源极被接在参考电压16，VSS，并且漏极接到混频器输出端18。其中平衡混频器具有 2×LO，和
Figure C9810381800052
转换后的输出。
输入信号接到第一倒相器电路22，以及本地振荡器(LO)信号接到第二倒向器电路24。该倒相器电路22和24作为提供异相信号到FET晶体管12和14的耦合变压器的中心抽头次极线圈。也可以使用其它倒相电路来提供这种功能。该异相信号由相位相差180°的信号构成。以后，这些信号被称作同相信号和异相信号。输入信号的同相分量接到第一FET晶体管12的第一栅极，异相分量接到第二FET晶体管14的第一栅极，LO信号的同相分量接到第一FET晶体管12的第二栅极，异相分量接到第二FET晶体管14的第二栅极。
连接到第二参考电压32，VDD，的多工器30连接混频器输出端18。该多工器包括第一和第二输出端34和36。该多工器30包括内置滤波器从而在第一输出端34输出在等于输入信号频率与LO频率之和的已转换的频率上的转换后的信号，并且在第二输出端36输出在等于双倍LO频率的倍频后的频率上的倍频信号。
混频器电路10还包括执行标准功能的各偏置电阻和隔DC电容。
图1电路的工作状况将在以下描述。连接到第一和第二FET晶体管12和14的该输入信号的同相和异相分量是异相的，因此在输出端18抵消。类似地，LO信号的同相和异向分量也在输出端抵消，因此该推挽电路不输出在输入频率或LO频率的信号。
输入信号和LO信号的同相分量连接第一FET 12的第一和第二栅极。第一双栅极FET 12形成同相分量积以产生频率分量等于同相输入信号分量与同相LO信号分量的频率之和的同相的转换后的信号。类似地，输入信号和LO信号的异相分量连接第二FET 14的第一和第二栅极。第二双栅极FET14形成异相分量积以产生其频率分量等于异相输入信号分量与异相LO信号分量的频率之和的异相的转换后的信号。
该双工电路30包括一滤波器，该滤波器只允许其频率等于输入信号频率与本地振荡器频率之和的转换后的信号通过。如上所述，同相转换后的信号的频率为输入信号频率和LO频率的和。异相分量的频率为从每个同相分量相移180°后产生的频率分量。因此转换后的异相分量其频率等于输入信号频率、LO频率及相移之和。然而，相移和到360°时等于没有相移，因而来自两个FET的该转换后的信号是同相(偶模式)并且在混频器输出端18相加在一起。
该双栅极FET 12和14被偏置以进行非线性操作，从而产生输入信号的二次项。每一二次项包括具有输入到FET的信号的两倍频率的分量。因此，第一FET 12产生LO信号同相分量两倍频率的信号，第二FET 14产生LO信号异相分量两倍频率的信号。倍频后的信号的相位关系为原始(未倍频的)信号相差的两倍。因此，对异相信号(180°相差)倍频就产生同相的倍频后的信号(360°相差)。这些同相信号可以直接相加。倍频后的LO信号在混频器输出端18相加在一起。
因此，推推混频器10执行现有技术的混频器和倍频电路的两种功能，并且简化了只使用了一个LO输入的倍频转换电路的实现过程。
本发明参照优选实施例进行了描述。对本领域普通技术人员而言，很明显可以作各种改动和替换。例如，倒相器电路可以由共射极相位分离放大器或各种其它放大器或变换电路实现。另外，级联的双极晶体管可以代替双栅极FET晶体管。
因此，该实施例并没有限制本发明，本发明由所附权利要求来限定。

Claims (3)

1、一种平衡混频器，包括：
一被连接用来接收一在输入信号频率上的输入信号的第一倒相器输入单元，用于提供一同相输入分量和一相位相差180°的异相输入分量；
一被连接用来接收在本振(LO)信号频率上的LO信号的第二倒相器输入单元，用于提供一同相LO分量和一相位相差180°的异相LO分量；
一推挽混频级包括：
一第一混频元件，其具有第一和第二端子以及第一和第二信号端口，所述第一信号端口连接第一倒相器输入单元以接收所述输入同相分量，所述第二信号端口连接第二倒相器输入单元以接收所述LO同相分量，所述第一混频元件用于将输入信号和LO信号的同相分量进行频率分量的混频并产生LO同相分量的两倍LO频率的频率分量；
一第二混频元件，其具有第一和第二端子以及第一和第二信号端口，所述第一信号端口连接第一倒相器输入单元以接收所述输入异相分量，所述第二信号端口连接第二倒相器输入单元以接收所述LO异相分量，所述第二混频元件用于将输入信号和LO信号的异相分量进行频率分量的混频并产生LO异相分量的两倍LO频率的频率分量；
所述第一和第二混频元件的第一端子连接参考电压，所述第一和第二混频元件的第二端子连接混频器输出端；以及
一多工器，其连接混频器输出端，具有提供转换后的信号的第一输出和提供第二输出信号的第二输出，其中该转换后的信号具有频率为输入信号与LO频率之和的频率分量，第二输出信号具有频率为LO信号频率的两倍的频率分量。
2、如权利要求1所述的混频器，其中所述多工器包括：
第一滤波器，用于只允许在输入信号和LO频率之和上的频率分量低衰减地通过；
第二滤波器，用于只允许在LO频率两倍上的频率分量低衰减地通过。
3、如权利要求1所述的混频器，其中所述第一和第二混频元件是双栅极FET晶体管。
CN98103818A 1997-03-05 1998-02-11 平衡混频器 Expired - Fee Related CN1125533C (zh)

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US08/811,625 US5826183A (en) 1997-03-05 1997-03-05 Circuit for simultaneous frequency doubler and mixer
US811,625 1997-03-05

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TW367663B (en) 1999-08-21
CN1192608A (zh) 1998-09-09
KR19980079524A (ko) 1998-11-25
JPH10303652A (ja) 1998-11-13
US5826183A (en) 1998-10-20
KR100260493B1 (ko) 2000-07-01
JP4021541B2 (ja) 2007-12-12

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