CN112542395A - 一种基于光子计数的探测器模组的三维封装方法 - Google Patents
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Abstract
本发明涉及光子计数探测器技术领域，具体涉及一种基于光子计数的探测器模组的三维封装方法，旨在解决现有技术中成本高不适用于量产形成的问题，其技术要点在于：使用电镀铜锡凸点将非碲锌镉半导体材料与读出电路进行焊接。上述所述的一种基于光子计数的探测器模组的三维封装方法，通过采用非碲锌镉材料，相比铟凸点制备和焊接，成本低，工艺兼容性好。同时读出电路芯片通过重布线工艺，把像素点焊接区域放在芯片中间，控制信号等放在芯片的边缘，用于后续模组组装到电路板时候打线组装。且一个探测器芯片可以对应焊接多个读出电路芯片，形成二维阵列，适用于量产。
Description
技术领域
本发明涉及光子计数探测器技术领域，具体涉及一种基于光子计数的探测器模组的三维封装方法。
背景技术
光子计数探测器是一种新型的辐射成像器件，由探测器、读出芯片通过焊球倒装方式组成。每个探测器和读出芯片均包括M×N阵列的像素单元。探测器主要包括硅(Si)、砷化镓(GaAs)、碲化镉(CdTe)、碲锌镉(CdZnTe)等半导体探测器，通过X射线与探测器的光电效应将X光子直接转换为电荷信号。每个探测器像素单元的电荷信号通过倒装焊球耦合到读出芯片的像素单元输入端，依次经过低噪声放大、滤波、比较甄别、计数累加等处理，最终将一定时间内的计数值读出作为对应图像像素的原始数据。光子计数探测器相比传统的积分式探测器无电子学噪声影响，同时具有能量分辨能力，因此具有更低的辐射剂量和更清晰的图像质量。
现有的产品是采用碲锌镉材质的探测器，通过铟凸点焊接到读出电路，并由读出电路引出信号，实现整个模组的封装。成本高且不适用于量产。
发明内容
因此，本发明要解决的技术问题在于克服现有技术中成本高，且不适用于量产形成的缺陷，从而提供一种基于光子计数的探测器模组的三维封装方法。
本发明的上述技术目的是通过以下技术方案得以实现的：
一种基于光子计数的探测器模组的三维封装方法，包含以下步骤：使用电镀铜锡凸点将非碲锌镉半导体材料与读出电路进行焊接。
优选的，所述非碲锌镉半导体材料为硅。
优选的，包含以下设备，从下至上依次设置的垫板、逆电流器及传感器，所述逆电流器与所述传感器之间放置有专用集成电路，所述专用集成电路与所述传感器之间设置有若干凸点，所述专用集成电路与传感器通过凸点键合，所述专用集成电路与所述垫板之间通过引线连通设置。
上述所述的一种基于光子计数的探测器模组的三维封装方法，通过采用非碲锌镉材料，相比铟凸点制备和焊接，成本低，工艺兼容性好。同时读出电路芯片通过重布线工艺，把像素点焊接区域放在芯片中间，控制信号等放在芯片的边缘，用于后续模组组装到电路板时候打线组装。且一个探测器芯片可以对应焊接多个读出电路芯片，形成二维阵列，适用于量产。
附图说明
为了更清楚地说明本发明具体实施方式或现有技术中的技术方案，下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明的一种实施方式的一种基于光子计数的探测器模组的三维封装方法的结构示意图。
附图标记说明：
1、垫板；2、逆电流器；3、传感器；4、专用集成电路；5、凸点；6、引线。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
请参阅图1，本申请提供了一种基于光子计数的探测器模组的三维封装方法，包含以下步骤：使用电镀铜锡凸点5将非碲锌镉半导体材料与读出电路进行焊接。
在本申请的一些实施方式中，所述非碲锌镉半导体材料为硅。在其他实施方式中，所述非碲锌镉半导体材料为其他化合物半导体材料。
在本申请的一些实施方式中，所述包含以下设备，从下至上依次设置的垫板1、逆电流器2及传感器3，所述逆电流器2与所述传感器3之间放置有专用集成电路4，所述专用集成电路4与所述传感器3之间设置有若干凸点5，所述专用集成电路4与传感器3通过凸点5键合，所述专用集成电路4与所述垫板1之间通过引线6连通设置。
本申请所提供的一种基于光子计数的探测器模组的三维封装方法，通过采用非碲锌镉材料，相比铟凸点5制备和焊接，成本低，工艺兼容性好。同时读出电路芯片通过重布线工艺，把像素点焊接区域放在芯片中间，控制信号等放在芯片的边缘，用于后续模组组装到电路板时候打线组装。且一个探测器芯片可以对应焊接多个读出电路芯片，形成二维阵列，适用于量产。
显然，上述实施例仅仅是为清楚地说明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本发明创造的保护范围之中。
Claims (3)
1.一种基于光子计数的探测器模组的三维封装方法，其特征在于：包含以下步骤：使用电镀铜锡凸点将非碲锌镉半导体材料与读出电路进行焊接。
2.根据权利要求1所述的基于光子计数的探测器模组的三维封装方法，其特征在于：所述非碲锌镉半导体材料为硅。
3.根据权利要求1所述的基于光子计数的探测器模组的三维封装方法，其特征在于：包含以下设备，从下至上依次设置的垫板(1)、逆电流器(2)及传感器(3)，所述逆电流器(2)与所述传感器(3)之间放置有专用集成电路(4)，所述专用集成电路(4)与所述传感器(3)之间设置有若干凸点(5)，所述专用集成电路(4)与传感器(3)通过凸点(5)键合，所述专用集成电路(4)与所述垫板(1)之间通过引线(6)连通设置。
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| US20170317133A1 (en) * | 2014-11-20 | 2017-11-02 | Koninklijke Philips N.V. | Radiation detector core assembly |
| US20190004191A1 (en) * | 2015-12-02 | 2019-01-03 | Shenzhen Xpectvision Technology Co., Ltd. | Packaging Methods of Semiconductor X-Ray Detectors |
| CN109407135A (zh) * | 2018-12-05 | 2019-03-01 | 北京航星机器制造有限公司 | 一种ct探测器和ct类安检设备 |
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- 2020-11-30 CN CN202011377434.5A patent/CN112542395A/zh active Pending
Patent Citations (7)
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| US20050139757A1 (en) * | 2003-12-30 | 2005-06-30 | Iwanczyk Jan S. | Pixelated cadmium zinc telluride based photon counting mode detector |
| US20160015339A1 (en) * | 2014-07-15 | 2016-01-21 | Siemens Aktiengesellschaft | Imaging device for electromagnetic radiation |
| US20170317133A1 (en) * | 2014-11-20 | 2017-11-02 | Koninklijke Philips N.V. | Radiation detector core assembly |
| CN107076858A (zh) * | 2015-05-26 | 2017-08-18 | 西门子医疗有限公司 | 辐射检测器设备 |
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