CN112542372A - Method for prolonging service life of semiconductor element protection partition plate - Google Patents
Method for prolonging service life of semiconductor element protection partition plate Download PDFInfo
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- CN112542372A CN112542372A CN201910898730.0A CN201910898730A CN112542372A CN 112542372 A CN112542372 A CN 112542372A CN 201910898730 A CN201910898730 A CN 201910898730A CN 112542372 A CN112542372 A CN 112542372A
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- semiconductor element
- partition plate
- element protective
- silane
- mixed gas
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 119
- 238000005192 partition Methods 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims abstract description 40
- 230000001681 protective effect Effects 0.000 claims abstract description 89
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 60
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910000077 silane Inorganic materials 0.000 claims abstract description 54
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 34
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims description 94
- 230000008021 deposition Effects 0.000 claims description 26
- 125000006850 spacer group Chemical group 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 4
- 238000000992 sputter etching Methods 0.000 abstract description 9
- 238000002360 preparation method Methods 0.000 abstract description 6
- 238000005530 etching Methods 0.000 abstract description 2
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention provides a method for prolonging the service life of a semiconductor element protection clapboard, which comprises the following steps: (1) providing a semiconductor element protective partition plate; (2) placing the semiconductor element protective partition plate in a mixed gas atmosphere of ammonia and silane, and performing microwave treatment at the temperature of 400-5000 ℃ to form a silicon nitride film on the surface of the semiconductor element protective partition plate, wherein the microwave power is 4000-5000W; (3) the semiconductor element protective partition plate is placed in the mixed gas atmosphere of ammonia and silane, and microwave treatment is carried out at the temperature of 600-800 ℃ to form a silicon nitride film on the surface of the semiconductor element protective partition plate, wherein the microwave power is 5500-7000W. When the semiconductor element protective partition plate processed by the method is applied to the ion etching process of semiconductor preparation, the etching degree of the semiconductor element protective partition plate is reduced, the consumption of the long strip partition plate is reduced, the service life of the semiconductor element protective partition plate is prolonged, and the cost is reduced.
Description
Technical Field
The invention belongs to the field of semiconductor preparation, and particularly relates to a method for prolonging the service life of a semiconductor element protection partition plate.
Background
In the ion etching process of semiconductor preparation, a semiconductor element protective partition plate is required to be arranged between a clamp and a semiconductor element and among all the elements to play a role in spacing and protection, and the semiconductor element protective partition plate is actually a waste element, so that the semiconductor element protective partition plate can be corroded or the ion etching becomes thinner and thinner along with the proceeding of the ion etching process, and if the thin partition plate is continuously used, the height of the thin partition plate is etched to be lower than that of a normal semiconductor element, so that the protection effect cannot be played. The protective barrier for such semiconductor components is typically disposed of periodically.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a method for prolonging the service life of a semiconductor element protective partition plate.
In order to achieve the purpose, the invention adopts the technical scheme that: a method of extending the useful life of a protective barrier for a semiconductor component, said method comprising the steps of:
(1) providing a semiconductor element protective partition plate;
(2) placing the semiconductor element protective partition plate in a mixed gas atmosphere of ammonia and silane, and performing microwave treatment at the temperature of 400-5000 ℃ to form a silicon nitride film on the surface of the semiconductor element protective partition plate, wherein the microwave power is 4000-5000W;
(3) the semiconductor element protective partition plate is placed in the mixed gas atmosphere of ammonia and silane, and microwave treatment is carried out at the temperature of 600-800 ℃ to form a silicon nitride film on the surface of the semiconductor element protective partition plate, wherein the microwave power is 5500-7000W.
The method for prolonging the service life of the semiconductor element protective partition plate adopts steps to form a silicon nitride film on the surface of the semiconductor element protective partition plate under the specific microwave power and temperature conditions, and when the semiconductor element protective partition plate processed by the method for prolonging the service life of the semiconductor element protective partition plate is applied to the ion etching process of semiconductor preparation, the etching degree of the semiconductor element protective partition plate is reduced, the consumption of long strip partition plates is reduced, the service life of the semiconductor element protective partition plate is prolonged, and the cost is reduced.
Preferably, after the step (3) is completed, the thickness of the silicon nitride film formed on the surface of the semiconductor element protective partition is 600-800 angstroms.
Under the condition that the thickness of the silicon nitride film is 600-800 angstroms, the method for prolonging the service life of the semiconductor element protective partition plate has a better effect, and when the thickness of the silicon nitride film exceeds 800 angstroms, the semiconductor element protective partition plate treated by the method for prolonging the service life of the semiconductor element protective partition plate causes the accumulation of ion etching residues when applied in the ion etching process of semiconductor preparation.
Preferably, in the step (2), the volume ratio of the ammonia gas to the silane in the mixed gas of the ammonia gas and the silane is 1:1-4: 3.
Preferably, in the step (3), the volume ratio of the ammonia gas to the silane in the mixed gas of the ammonia gas and the silane is 4:1-4.5: 1.
Preferably, in the step (2), the surface of the semiconductor element protective spacer is formed with a silicon nitride film by performing microwave treatment at a temperature of 450 ℃, and the microwave power is 4500W.
Preferably, in the step (3), the microwave treatment is performed at a temperature of 700 ℃ to form a silicon nitride film on the surface of the semiconductor element protective spacer, and the microwave power is 6500W.
Preferably, the step (2) and the step (3) are performed in a reaction chamber of a deposition apparatus, the reaction chamber comprises a first reaction chamber and a second reaction chamber, the step (2) is performed in the first reaction chamber, and after the step (2) is finished, the semiconductor element protective partition plate is transferred to the second reaction chamber to perform the step (3) treatment.
Preferably, the flow rate of the mixed gas of the ammonia gas and the silane in the first reaction chamber is 2000sccm, and the pressure in the first reaction chamber is 0.3-0.45 mbar.
Preferably, the flow rate of the mixed gas of the ammonia gas and the silane in the second reaction chamber is 3000sccm, and the pressure in the second reaction chamber is 0.45-0.55 mbar.
Preferably, the transmission speed of the semiconductor element protective partition plate in the reaction cavity is 200-220 cm/min.
The invention has the beneficial effects that: the invention provides a method for prolonging the service life of a semiconductor element protective clapboard, which adopts steps to form a silicon nitride film on the surface of the semiconductor element protective clapboard under the conditions of specific microwave power and temperature.
Detailed Description
To better illustrate the objects, aspects and advantages of the present invention, the present invention will be further described with reference to specific examples.
Example 1
The method for prolonging the service life of the semiconductor element protection partition plate, which is an embodiment of the invention, comprises the following steps:
(1) providing a semiconductor element protective clapboard and providing a deposition device, wherein the deposition device is provided with a reaction cavity, and the reaction cavity comprises a first reaction cavity and a second reaction cavity which are communicated;
(2) placing the semiconductor element protection partition plate into a first reaction cavity of the deposition equipment, placing the semiconductor element protection partition plate into a mixed gas atmosphere of ammonia gas and silane, wherein the volume ratio of the ammonia gas to the silane in the mixed gas is 1:1, performing microwave treatment at the temperature of 450 ℃ to form a silicon nitride film on the surface of the semiconductor element protection partition plate, wherein the microwave power is 4500W, the flow rate of the mixed gas of the ammonia gas and the silane in the first reaction cavity is 2000sccm, and the pressure in the first reaction cavity is 0.3-0.45 mbar;
(3) and (3) transmitting the semiconductor element protective partition plate processed in the step (2) into a second reaction cavity of the deposition equipment, placing the second reaction cavity in a mixed gas atmosphere of ammonia gas and silane, wherein the volume ratio of the ammonia gas to the silane in the mixed gas is 4:1, performing microwave treatment at the temperature of 700 ℃ to form a silicon nitride film on the surface of the semiconductor element protective partition plate, wherein the microwave power is 6500W, the flow rate of the mixed gas of the ammonia gas and the silane in the second reaction cavity is 3000sccm, the pressure in the second reaction cavity is 0.45-0.55mbar, after the step (3) is completed, the thickness of the silicon nitride film formed on the surface of the semiconductor element protective partition plate is 700 angstroms, and the transmission speed of the semiconductor element protective partition plate in the reaction cavity is 200-220 cm/min.
Example 2
The method for prolonging the service life of the semiconductor element protection partition plate, which is an embodiment of the invention, comprises the following steps:
(1) providing a semiconductor element protective clapboard and providing a deposition device, wherein the deposition device is provided with a reaction cavity, and the reaction cavity comprises a first reaction cavity and a second reaction cavity which are communicated;
(2) placing the semiconductor element protection partition plate into a first reaction cavity of the deposition equipment, placing the semiconductor element protection partition plate into a mixed gas atmosphere of ammonia gas and silane, wherein the volume ratio of the ammonia gas to the silane in the mixed gas is 1:1, performing microwave treatment at the temperature of 450 ℃ to form a silicon nitride film on the surface of the semiconductor element protection partition plate, wherein the microwave power is 4500W, the flow rate of the mixed gas of the ammonia gas and the silane in the first reaction cavity is 2000sccm, and the pressure in the first reaction cavity is 0.3-0.45 mbar;
(3) and (3) transmitting the semiconductor element protective partition plate processed in the step (2) into a second reaction cavity of the deposition equipment, placing the second reaction cavity in a mixed gas atmosphere of ammonia gas and silane, wherein the volume ratio of the ammonia gas to the silane in the mixed gas is 4:1, performing microwave treatment at the temperature of 700 ℃ to form a silicon nitride film on the surface of the semiconductor element protective partition plate, wherein the microwave power is 6500W, the flow rate of the mixed gas of the ammonia gas and the silane in the second reaction cavity is 3000sccm, the pressure in the second reaction cavity is 0.45-0.55mbar, after the step (3) is completed, the thickness of the silicon nitride film formed on the surface of the semiconductor element protective partition plate is 600 angstroms, and the transmission speed of the semiconductor element protective partition plate in the reaction cavity is 200-220 cm/min.
Example 3
The method for prolonging the service life of the semiconductor element protection partition plate, which is an embodiment of the invention, comprises the following steps:
(1) providing a semiconductor element protective clapboard and providing a deposition device, wherein the deposition device is provided with a reaction cavity, and the reaction cavity comprises a first reaction cavity and a second reaction cavity which are communicated;
(2) placing the semiconductor element protection partition plate into a first reaction cavity of the deposition equipment, placing the semiconductor element protection partition plate into a mixed gas atmosphere of ammonia gas and silane, wherein the volume ratio of the ammonia gas to the silane in the mixed gas is 1:1, performing microwave treatment at the temperature of 450 ℃ to form a silicon nitride film on the surface of the semiconductor element protection partition plate, wherein the microwave power is 4500W, the flow rate of the mixed gas of the ammonia gas and the silane in the first reaction cavity is 2000sccm, and the pressure in the first reaction cavity is 0.3-0.45 mbar;
(3) and (3) transmitting the semiconductor element protective partition plate processed in the step (2) into a second reaction cavity of the deposition equipment, placing the second reaction cavity in a mixed gas atmosphere of ammonia gas and silane, wherein the volume ratio of the ammonia gas to the silane in the mixed gas is 4:1, performing microwave treatment at the temperature of 700 ℃ to form a silicon nitride film on the surface of the semiconductor element protective partition plate, wherein the microwave power is 6500W, the flow rate of the mixed gas of the ammonia gas and the silane in the second reaction cavity is 3000sccm, the pressure in the second reaction cavity is 0.45-0.55mbar, after the step (3) is completed, the thickness of the silicon nitride film formed on the surface of the semiconductor element protective partition plate is 800 angstroms, and the transmission speed of the semiconductor element protective partition plate in the reaction cavity is 200-220 cm/min.
Example 4
The method for prolonging the service life of the semiconductor element protection partition plate, which is an embodiment of the invention, comprises the following steps:
(1) providing a semiconductor element protective clapboard and providing a deposition device, wherein the deposition device is provided with a reaction cavity, and the reaction cavity comprises a first reaction cavity and a second reaction cavity which are communicated;
(2) placing the semiconductor element protective partition plate into a first reaction cavity of the deposition equipment, placing the semiconductor element protective partition plate into a mixed gas atmosphere of ammonia gas and silane, wherein the volume ratio of the ammonia gas to the silane in the mixed gas is 1:1, performing microwave treatment at the temperature of 400 ℃ to form a silicon nitride film on the surface of the semiconductor element protective partition plate, wherein the microwave power is 4000W, the flow rate of the mixed gas of the ammonia gas and the silane in the first reaction cavity is 2000sccm, and the pressure in the first reaction cavity is 0.3-0.45 mbar;
(3) and (3) transmitting the semiconductor element protective partition board treated in the step (2) into a second reaction cavity of the deposition equipment, placing the second reaction cavity in a mixed gas atmosphere of ammonia gas and silane, wherein the volume ratio of the ammonia gas to the silane in the mixed gas is 4:1, performing microwave treatment at the temperature of 600 ℃ to form a silicon nitride film on the surface of the semiconductor element protective partition board, wherein the microwave power is 5500W, the flow rate of the mixed gas of the ammonia gas and the silane in the second reaction cavity is 3000sccm, the pressure in the second reaction cavity is 0.45-0.55mbar, after the step (3) is completed, the thickness of the silicon nitride film formed on the surface of the semiconductor element protective partition board is 700 angstroms, and the transmission speed of the semiconductor element protective partition board in the reaction cavity is 200-220 cm/min.
Example 5
The method for prolonging the service life of the semiconductor element protection partition plate, which is an embodiment of the invention, comprises the following steps:
(1) providing a semiconductor element protective clapboard and providing a deposition device, wherein the deposition device is provided with a reaction cavity, and the reaction cavity comprises a first reaction cavity and a second reaction cavity which are communicated;
(2) placing the semiconductor element protective partition plate into a first reaction cavity of the deposition equipment, placing the semiconductor element protective partition plate into a mixed gas atmosphere of ammonia gas and silane, wherein the volume ratio of the ammonia gas to the silane in the mixed gas is 1:1, performing microwave treatment at the temperature of 500 ℃ to form a silicon nitride film on the surface of the semiconductor element protective partition plate, wherein the microwave power is 5000W, the flow rate of the mixed gas of the ammonia gas and the silane in the first reaction cavity is 2000sccm, and the pressure in the first reaction cavity is 0.3-0.45 mbar;
(3) and (3) transmitting the semiconductor element protective partition board processed in the step (2) into a second reaction cavity of the deposition equipment, placing the second reaction cavity in a mixed gas atmosphere of ammonia gas and silane, wherein the volume ratio of the ammonia gas to the silane in the mixed gas is 4:1, performing microwave treatment at the temperature of 800 ℃ to form a silicon nitride film on the surface of the semiconductor element protective partition board, wherein the microwave power is 7000W, the flow rate of the mixed gas of the ammonia gas and the silane in the second reaction cavity is 3000sccm, the pressure in the second reaction cavity is 0.45-0.55mbar, after the step (3) is completed, the thickness of the silicon nitride film formed on the surface of the semiconductor element protective partition board is 800 angstroms, and the transmission speed of the semiconductor element protective partition board in the reaction cavity is 200-220 cm/min.
Comparative example 1
A method for extending the service life of a protective spacer for a semiconductor element as a comparative example of the present invention, comprising the steps of:
(1) providing a semiconductor element protective clapboard and providing a deposition device, wherein the deposition device is provided with a reaction cavity, and the reaction cavity comprises a first reaction cavity and a second reaction cavity which are communicated;
(2) placing the semiconductor element protection partition plate into a first reaction cavity of the deposition equipment, placing the semiconductor element protection partition plate into a mixed gas atmosphere of ammonia gas and silane, wherein the volume ratio of the ammonia gas to the silane in the mixed gas is 1:1, performing microwave treatment at the temperature of 450 ℃ to form a silicon nitride film on the surface of the semiconductor element protection partition plate, wherein the microwave power is 4500W, the flow rate of the mixed gas of the ammonia gas and the silane in the first reaction cavity is 2000sccm, and the pressure in the first reaction cavity is 0.3-0.45 mbar;
(3) and (3) transmitting the semiconductor element protective partition board processed in the step (2) into a second reaction cavity of the deposition equipment, placing the second reaction cavity in a mixed gas atmosphere of ammonia gas and silane, wherein the volume ratio of the ammonia gas to the silane in the mixed gas is 4:1, performing microwave treatment at the temperature of 700 ℃ to form a silicon nitride film on the surface of the semiconductor element protective partition board, wherein the microwave power is 6500W, the flow rate of the mixed gas of the ammonia gas and the silane in the second reaction cavity is 3000sccm, the pressure in the second reaction cavity is 0.45-0.55mbar, after the step (3) is completed, the thickness of the silicon nitride film formed on the surface of the semiconductor element protective partition board is 900 angstroms, and the transmission speed of the semiconductor element protective partition board in the reaction cavity is 200-220 cm/min.
Effect example 1
Providing semiconductor element protective spacers, respectively treating the provided semiconductor element protective spacers by using the methods of examples 1-5 and comparative example 1, and applying the semiconductor element protective spacers to the ion etching process of the same semiconductor preparation by using untreated semiconductor element protective spacers as a comparison group, wherein the result shows that the service life of the untreated semiconductor element protective spacers as the comparison group is 2.5 months, while the semiconductor element protective spacers treated by the methods of examples 1-5 can be recycled after being respectively treated by the methods of examples 1-5 every two months, thereby saving the cost; the semiconductor element protective spacer treated by the method of comparative example 1 was subject to the accumulation of ion etching residues in application.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the protection scope of the present invention, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (10)
1. A method of extending the useful life of a protective barrier for a semiconductor component, said method comprising the steps of:
(1) providing a semiconductor element protective partition plate;
(2) placing the semiconductor element protective partition plate in a mixed gas atmosphere of ammonia and silane, and performing microwave treatment at the temperature of 400-5000 ℃ to form a silicon nitride film on the surface of the semiconductor element protective partition plate, wherein the microwave power is 4000-5000W;
(3) the semiconductor element protective partition plate is placed in the mixed gas atmosphere of ammonia and silane, and microwave treatment is carried out at the temperature of 600-800 ℃ to form a silicon nitride film on the surface of the semiconductor element protective partition plate, wherein the microwave power is 5500-7000W.
2. The method as claimed in claim 1, wherein the silicon nitride film formed on the surface of the semiconductor device protection spacer after the step (3) is completed has a thickness of 600-800 angstroms.
3. The method according to claim 1, wherein in the step (2), the volume ratio of the ammonia gas to the silane in the mixed gas of the ammonia gas and the silane is 1:1 to 4: 3.
4. The method according to claim 1, wherein in the step (3), the volume ratio of the ammonia gas to the silane in the mixed gas of the ammonia gas and the silane is 4:1 to 4.5: 1.
5. The method according to claim 1, wherein in the step (2), the surface of the semiconductor element protective spacer is subjected to microwave treatment at a temperature of 450 ℃ to form the silicon nitride film, and the microwave power is 4500W.
6. The method according to claim 1, wherein in the step (3), the silicon nitride film is formed on the surface of the semiconductor element protective spacer by performing microwave treatment at a temperature of 700 ℃, and the microwave power is 6500W.
7. The method according to any one of claims 1 to 6, wherein the steps (2) and (3) are carried out in a reaction chamber of a deposition apparatus, the reaction chamber comprises a first reaction chamber and a second reaction chamber, the step (2) is carried out in the first reaction chamber, and the semiconductor element protective partition plate is transferred to the second reaction chamber after the step (2) is finished to carry out the treatment of the step (3).
8. The method as claimed in claim 7, wherein the flow rate of the mixed gas of ammonia gas and silane in the first reaction chamber is 2000sccm, and the pressure in the first reaction chamber is 0.3-0.45 mbar.
9. The method as claimed in claim 7, wherein the flow rate of the mixed gas of ammonia gas and silane in the second reaction chamber is 3000sccm, and the pressure in the second reaction chamber is 0.45-0.55 mbar.
10. The method as claimed in claim 7, wherein the transporting speed of the semiconductor element protective barrier in the reaction chamber is 200-220 cm/min.
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| CN201910898730.0A CN112542372A (en) | 2019-09-23 | 2019-09-23 | Method for prolonging service life of semiconductor element protection partition plate |
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2019
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