CN110120343A - The manufacturing method of silicon nitride film and semiconductor devices - Google Patents
The manufacturing method of silicon nitride film and semiconductor devices Download PDFInfo
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- CN110120343A CN110120343A CN201810118984.1A CN201810118984A CN110120343A CN 110120343 A CN110120343 A CN 110120343A CN 201810118984 A CN201810118984 A CN 201810118984A CN 110120343 A CN110120343 A CN 110120343A
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- silicon nitride
- source gas
- layer
- nitride film
- silicon
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 152
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 148
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 179
- 239000007789 gas Substances 0.000 claims abstract description 116
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 89
- 230000008021 deposition Effects 0.000 claims abstract description 63
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 54
- 239000010703 silicon Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 27
- 239000010410 layer Substances 0.000 claims description 137
- 238000000151 deposition Methods 0.000 claims description 61
- 230000036632 reaction speed Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 229910003978 SiClx Inorganic materials 0.000 claims description 4
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 3
- 239000005052 trichlorosilane Substances 0.000 claims description 3
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 239000001257 hydrogen Substances 0.000 abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 87
- 210000002469 basement membrane Anatomy 0.000 description 23
- 239000012495 reaction gas Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910003910 SiCl4 Inorganic materials 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 210000004379 membrane Anatomy 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- -1 silicon Alkane Chemical class 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66553—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using inside spacers, permanent or not
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
Abstract
The present invention provides the manufacturing method of a kind of silicon nitride film and semiconductor devices, original step deposition is changed to multiple deposition, first pass through the first nitrogen source gas and the reaction of the first silicon source gas, deposition forms the first silicon nitride layer on the surface of a substrate, first nitrogen source gas therein has little time to react with substrate, it thus it can be prevented that the damage of substrate surface, then the deposition on the surface of first silicon nitride layer is reacted with the second silicon source gas by the inclusion of the second nitrogen source gas of ammonia and forms the second silicon nitride layer, the characteristics of being greater than the deposition rate of first silicon nitride layer using the deposition rate of second silicon nitride layer, to improve the deposition rate and step coverage of silicon nitride film layer；Further, contain nitrogen without ammonia in first nitrogen source gas, contain ammonia and nitrogen in second nitrogen source gas, has the characteristics that weak hydrogen bond and certain physical absorption, the deposition rate and step coverage of Lai Gaishan silicon nitride film across the deposition surface using ammonia.
Description
Technical field
The present invention relates to the manufactures of ic manufacturing technology field more particularly to a kind of silicon nitride film and semiconductor devices
Method.
Background technique
Silicon nitride (Si3N4) film has to mobile ion (such as Na+Deng) blocking capability is strong, compact structure, pinhold density
It is small, in hydrophobicity, chemical stability is good, dielectric constant is big (K is about 7) etc. good characteristics, be a kind of in semiconductor, microelectronics
With the widely applied thin-film material in the field MEMS, it is widely used in passivation, isolation, capacitor dielectric, structural material etc..For example, nitrogen
SiClx (Si3N4) film because its with high dielectric constant and by as in floating gate type flash memory floating gate (Floating Gate) and
A kind of dielectric material (i.e. ONO, wherein " O " represents SiO between control gate (Control Gate)2Film, " N " are then represented
Si3N4Film).In addition, due to Si3N4The high rigidity of film, high reliability, excellent resistance to corrosion, high-temperature stability and
High-temperature oxidation resistance, Si3N4The technical field that film is modified on the surface of the material also has broad application prospects.For example, Si3N4It is thin
Film is not easy to be permeated by oxygen molecule, steam and removable ion, using this advantage, using it as mask layer (Masking
Layer), barrier layer or etching stop layer can prevent the active region (Active of wafer surface when field oxide makes
Area it) is aoxidized, to play the role of protecting the active region.However, the manufacturer of known silicon nitride films many at present
Method can damage lower section film layer when manufacturing silicon nitride film to a certain extent, and the Step Coverage for the silicon nitride film to be formed occur
The problem of rate difference affects the yield rate and performance of device.
Summary of the invention
The purpose of the present invention is to provide the manufacturing methods of a kind of silicon nitride film and semiconductor devices, can be effectively protected
Lower section film layer, and it is able to maintain good step coverage, improve the yield rate and performance of the semiconductor devices of formation.
To achieve the goals above, the present invention provides a kind of manufacturing method of silicon nitride film, comprising:
Using the first silicon source gas and the first nitrogen source gas, the first silicon nitride layer is deposited on a substrate surface, described
The reaction speed of one nitrogen source gas and first silicon source gas is the reaction speed of first nitrogen source gas and the substrate
Decades of times more than；
Using the second silicon source gas and the second nitrogen source gas, the second nitridation is deposited on the surface of first silicon nitride layer
Silicon layer, the deposition rate of second silicon nitride layer are greater than the deposition rate of first silicon nitride layer.
Optionally, the material of the substrate includes the medium of polysilicon, metal, dielectric constant lower than 3, amorphous carbon, contains
At least one of the antireflection material of silicon and photoresist.
Optionally, carbon containing in the material of the substrate.
Optionally, first silicon source gas and second silicon source gas respectively include silane (SiH4), disilane
(Si2H6), dichlorosilane (SiH2Cl2), trichlorosilane (SiHCl3), tetrachloro silicane (SiCl4) and disilicone hexachloride (Si2Cl6) in
At least one.
Optionally, first nitrogen source gas is free of ammonia.
Optionally, first nitrogen source gas includes nitrogen.
Optionally, the technological parameter for depositing first silicon nitride layer includes: that deposition power is
Technological temperature isThe flow of the silicon source gas isThe flow of nitrogen is
10000sccm~20000sccm.
Optionally, second nitrogen source gas includes ammonia or including ammonia and nitrogen.
Optionally, the technological parameter for depositing second silicon nitride layer includes: that deposition power is Work
Skill temperature isThe flow of the silicon source gas isAmmonia (NH3) stream
Amount isNitrogen (N2) flow be
The present invention provides a kind of manufacturing method of semiconductor devices, comprising: using the manufacture of one of above-mentioned silicon nitride film
Method forms required silicon nitride film.
Optionally, the semiconductor devices is the floating gate type memory for including floating gate, the silicon nitride film and control gate, institute
Silicon nitride film is stated to be formed between the floating gate and control gate and be used as a kind of storage medium；Alternatively, the semiconductor devices is
MOS transistor with grid and the silicon nitride film, the silicon nitride film are formed on the gate lateral wall, are used as side wall.
Optionally, the semiconductor devices includes the lower section film layer being layered in below the silicon nitride film and/or is layered in
Top film layer above the silicon nitride film layer, the silicon nitride film is as passivation layer, the exposure mask on the lower section film surface
Layer or block protective layer, and/or, etching stop layer when as the etching top film layer.
Compared with prior art, technical solution of the present invention has the advantages that
1, original step deposition is changed to multiple deposition, first passes through first by the manufacturing method of silicon nitride film of the invention
Nitrogen source gas and the reaction of the first silicon source gas, deposition forms the first silicon nitride layer, first nitrogen source on the surface of a substrate
The reaction speed of gas and first silicon source gas is the tens of of the reaction speed of first nitrogen source gas and the substrate
Again more than (such as 50 times or 100 times), the first nitrogen source gas has little time to react with substrate, can regard the first nitrogen source gas as
Do not react with substrate, thus it can be prevented that the damage of substrate surface, then by the inclusion of the second nitrogen source gas of ammonia with
Second silicon source gas reaction deposition on the surface of first silicon nitride layer forms the second silicon nitride layer, utilizes second nitrogen
The deposition rate of SiClx layer is greater than the characteristics of deposition rate of first silicon nitride layer, the deposition speed of Lai Gaishan silicon nitride film layer
Rate and step coverage；Further, contain ammonia in second nitrogen source gas, have across the deposition surface using ammonia weak
Hydrogen bond and the characteristics of certain physical absorption, the deposition rate and step coverage of Lai Gaishan silicon nitride film；In addition, described
Contain nitrogen without ammonia in one nitrogen source gas, also contains nitrogen in the second nitrogen source gas, under general condition using nitrogen
It is not easy the characteristics of reacting with other substances, reduces the impurity in the silicon nitride film of deposition, improves the silicon nitride film of formation
Performance can expand application range of the silicon nitride film in technical field of semiconductors.
2, the manufacturing method of semiconductor devices of the invention, the manufacturing method due to using silicon nitride film of the invention are come
Silicon nitride film needed for being formed, so as to improve the performance of semiconductor devices obtained.
Detailed description of the invention
Fig. 1 is the flow chart of the manufacturing method of the silicon nitride film of the specific embodiment of the invention；
Fig. 2 is the device profile structural schematic diagram in the manufacturing method of the silicon nitride film of the specific embodiment of the invention；
Fig. 3 is the device profile structural schematic diagram in the manufacturing method of the semiconductor devices of the specific embodiment of the invention.
Specific embodiment
A kind of manufacturing method of known silicon nitride film, uses single silane (SiH4), disilane (Si2H6) etc. silicon raw materials gas
Body and ammonia (NH3) or nitrogen (N2) and nitrogen mixed gas, needed for depositing and being formed come a step direct in the film layer of lower section
The silicon nitride film of thickness.In the manufacturing process of this silicon nitride film, lower section film layer (such as CNT, A-Carbon, Photo Resist
Deng) carbon under plasma and heating temperature condition easily with NH in reaction gas3It reacts:
It is impaired that the reaction will lead to lower section film layer；On the other hand, silicon nitride film does not add NH in reaction gas3The case where
Under will suffer from poor step coverage concern, cause the thickness of silicon nitride film deposition on the sidewalls in the gaps to compare baseline
(baseline) thinner.
Based on this, the present invention provides the manufacturing method of a kind of silicon nitride film and semiconductor devices, by above-mentioned silicon nitride film
Step deposition be changed to multiple deposition, first using silicon source gas and without ammonia etc. can and the nitrogen source gas that react of carbon make
For reaction gas, first step deposition is carried out, on the surface of lower section film layer under plasma and heating condition to avoid ammonia
Gas NH3Damage to lower section film layer, then, using silicon source gas and nitrogen source gas containing ammonia as reaction gas progress the
Two steps deposition, to obtain good step coverage.
To be clearer and more comprehensible the purpose of the present invention, feature, a specific embodiment of the invention is made with reference to the accompanying drawing
Further instruction, however, the present invention can be realized with different forms, it should not be to be confined to the embodiment described.
Referring to FIG. 1, the present invention provides a kind of manufacturing method of silicon nitride film, comprising:
S1 deposits the first silicon nitride layer using the first silicon source gas and the first nitrogen source gas on a substrate surface, described
The reaction speed of first nitrogen source gas and first silicon source gas is the reaction speed of first nitrogen source gas and the substrate
It is more than the decades of times of degree；
S2 deposits second on the surface of first silicon nitride layer using the second silicon source gas and the second nitrogen source gas
Silicon nitride layer, the deposition rate of second silicon nitride layer are greater than the deposition rate of first silicon nitride layer；
Referring to FIG. 2, the substrate in step S1 includes that semi-conductive substrate and one are formed in half in the present embodiment
Basement membrane layer 201 on conductor substrate 200, the semiconductor substrate 200 provide workbench for subsequent technique, can serve as a contrast for silicon
The those skilled in the art such as bottom, germanium substrate, silicon-Germanium substrate, silicon carbide substrates, silicon-on-insulator substrate, germanium substrate on insulator are ripe
Any semiconductor substrate known could be formed with well region, device isolation structure etc. in the semiconductor substrate 200.The substrate
Film layer 201 is formed on the surface of the semiconductor substrate 200, can be one layer of covering 200 all surface of semiconductor substrate
Complete membrane, is also possible to the patterned film by patterning and exposing 200 part of the surface of semiconductor substrate, in Fig. 2
Shown in film layer be patterned film, have and expose the opening on 200 surface of part semiconductor substrate.The basement membrane layer 201
Material may include polysilicon, metal, dielectric constant lower than 3 medium, carbon nanotube, amorphous carbon, siliceous antireflection
At least one of material and photoresist, e.g. carbon containing carbon nanotube, amorphous carbon or photoresist.It in step sl can be with
Using including silane (SiH4), disilane (Si2H6), dichlorosilane (SiH2Cl2), trichlorosilane (SiHCl3), tetrachloro silicane
(SiCl4) and disilicone hexachloride (Si2Cl6) at least one of the first silicon source gas and be free of ammonia (NH3) and contain nitrogen
Gas (N2) the first nitrogen source gas as reaction gas, and the depositing operations such as using plasma enhanced deposition are in basement membrane layer
201 and its semiconductor substrate 200 exposed surface on deposit the heavy of the first silicon nitride layer 202a, the first silicon nitride layer 202a
Product thickness is, for example, 50 angstroms~500 angstroms, and depositing required technological parameter includes: that deposition power (HF) is
Technological temperature isThe flow of first silicon source gas isNitrogen
Flow is 10000sccm~20000sccm.In some embodiments of the invention, first silicon source gas can be only
Silane, the first nitrogen source gas can be only nitrogen, because nitrogen has very strong bond energy, it is necessary to be dissociated by electron bombardment
It is atomized, to participate in deposition process, this leads to the chemisorption for occurring a degree of N atom on 201 surface of film layer, in turn
Deposition rate and step coverage are influenced, but can guarantee that the impurity in the first silicon nitride layer 202a to be formed is less, even
There is no impurity.It should be noted that the first nitrogen source gas is not limited only to nitrogen, as long as first nitrogen source gas and described
The reaction speed of one silicon source gas considerably beyond first nitrogen source gas and the substrate reaction speed so that the first nitrogen source
Gas has little time to react with basement membrane layer 201, such as the reaction of first nitrogen source gas and first silicon source gas
Speed is the decades of times of the reaction speed of first nitrogen source gas and the substrate, hundreds times or even thousands of times, then is for example existed
In the other embodiment of the present invention, first nitrogen source gas may include organic amine, can also include helium (He), neon (Ne),
Argon (Ar), krypton (Kr), any rare gas in xenon (Xe).
In step sl, since the reaction speed of first nitrogen source gas and first silicon source gas is described first
The decades of times of the reaction speed of nitrogen source gas and the substrate, the first nitrogen source gas have little time to react with basement membrane layer 201, therefore
When deposition forms the first silicon nitride layer 202a, basement membrane layer 201 can be prevented sensitive to reaction gas and reacted, in turn
It prevents that basement membrane layer 201 is caused to damage when the first silicon nitride layer 202a of deposition.
With continued reference to FIG. 2, in step s 2, the second silicon source gas identical with the first silicon source gas can be used, and
The second nitrogen source gas containing ammonia is used instead as reaction gas, and the depositing operations such as using plasma enhanced deposition are in the first nitrogen
Deposit the second silicon nitride layer 202b on the surface of SiClx layer 202a, second nitrogen source gas and second silicon source gas it is anti-
Speed is answered to be greater than the reaction speed of first nitrogen source gas and first silicon source gas, so that second silicon nitride layer
Deposition rate is greater than the deposition rate of first silicon nitride layer, and the second silicon nitride layer 202b deposited in same time is than first
Silicon nitride layer 202a is thick, and roughly the same in the opening of basement membrane layer 201 (i.e. gap) side wall, top, the deposition thickness of bottom,
Step coverage is which thereby enhanced, the first silicon nitride layer 202a protects basement membrane layer in the second silicon nitride layer 202b deposition process
201, to avoid it by the damage of the second nitrogen source gas, the second silicon nitride layer 202b and the first silicon nitride layer 202a group cost
The silicon nitride film 202 of embodiment.The second silicon source gas in step S2 uses mutually of the same race with the first silicon source gas in step S1
Only (such as tuning up) is adaptively adjusted to the flow of silicon source gas in the gas of class, so as to avoid replacement silicon source
The cost and operation of gas, simplify process and reduce cost, compare the first nitrogen source by the second nitrogen source gas in this present embodiment
The more ammonias of gas, and ammonia has weak hydrogen bond and physical absorption across the deposition surface, do not need plasma dissociation, therefore
The step coverage and deposition rate of the second silicon nitride layer 202b can be improved.In the present embodiment, the second silicon nitride is deposited
Technological parameter needed for layer 202b includes: that deposition power isTechnological temperature is Institute
The flow for stating silicon source gas isAmmonia (NH3) flow beNitrogen
Gas (N2) flow beIn other embodiments of the invention, the second nitrogen source gas and
The selection of two silicon source gases mainly enables to the deposition rate of second silicon nitride layer to be greater than first silicon nitride layer
Deposition rate, such as second nitrogen source gas may include ammonia and/or organic amine, can also include helium (He), neon
(Ne), argon (Ar), krypton (Kr), any rare gas in xenon (Xe).
It should be noted that the manufacturing method of silicon nitride film of the invention, is not restricted to form the first silicon nitride layer
202a and the second silicon nitride layer 202b two membranes, can also be according to device performance requirements, in the first silicon nitride layer 202a and second
Between silicon nitride layer 202b, and/or, between the first silicon nitride layer 202a and basement membrane layer 201, and/or, the second silicon nitride layer
On 202b, by selecting suitable silicon source gas, nitrogen source gas and other gases, and configure suitable temperature, power with
And gas flow deposits suitable silicon nitride layer, for example, between the first silicon nitride layer 202a and basement membrane layer 201, using silicon
Alkane, carbon containing gas and nitrogen form the silicon nitride layer of carbon dope as reaction gas, to further enhance basement membrane layer 201
Performance and damage of the deposition to basement membrane layer 201 to stop subsequent nitridation silicon layer；For another example in the first silicon nitride layer 202a
And second between silicon nitride layer 202b, and/or, on the second silicon nitride layer 202b, using silane, the gas and nitrogen of boracic
As reaction gas, form the silicon nitride layer of boron-doping, the silicon nitride layer of the boron-doping with include the first silicon nitride layer 202a and the
All silicon nitride layers including nitride silicon layer 202b are formed together the silicon nitride film with stress, are drawn with meeting some needs
Enter the manufacture of the semiconductor devices of stress.
From the above mentioned, original step deposition is changed to multiple deposition, first led to by the manufacturing method of silicon nitride film of the invention
The first nitrogen source gas and the reaction of the first silicon source gas are crossed, deposition forms the first silicon nitride layer on the surface of a substrate, and described the
The reaction speed of one nitrogen source gas and first silicon source gas is the reaction speed of first nitrogen source gas and the substrate
Decades of times (such as 50 times or 100 times) more than, the first nitrogen source gas has little time to react with substrate, can regard the first nitrogen as
Source gas does not react with substrate, thus it can be prevented that the damage of substrate surface, then by the inclusion of the second nitrogen source of ammonia
Gas reacts on the surface of first silicon nitride layer deposition with the second silicon source gas and forms the second silicon nitride layer, using described
The deposition rate of second silicon nitride layer is greater than the characteristics of deposition rate of first silicon nitride layer, Lai Gaishan silicon nitride film layer
Deposition rate and step coverage；Further, contain ammonia in second nitrogen source gas, across the deposition surface using ammonia
Have the characteristics that weak hydrogen bond and certain physical absorption, the deposition rate and step coverage of Lai Gaishan silicon nitride film；In addition,
Contain nitrogen without ammonia in first nitrogen source gas, also contains nitrogen in the second nitrogen source gas, using nitrogen general
Under the conditions of be not easy the characteristics of reacting with other substances, reduce the impurity in the silicon nitride film of deposition, improve the nitridation of formation
The performance of silicon fiml can expand application range of the silicon nitride film in technical field of semiconductors.
Fig. 2 and Fig. 3 are please referred to, the present invention also provides a kind of manufacturing methods of semiconductor devices, comprising:
Firstly, providing semi-conductive substrate 200, basement membrane layer 201 is formed in the semiconductor substrate 200；
Then, using the manufacturing method of one of above-mentioned silicon nitride film, institute is formed on the surface of the basement membrane layer 201
The silicon nitride film 202 needed.
Referring to FIG. 2, in one embodiment of this invention, the material of the basement membrane layer 201 can be according to it wait make
The function for the semiconductor devices made selects, and can be the carbon nanotubes such as polysilicon, metal, low-K dielectric, graphene (CNT) material
Material, amorphous carbon (α-Carbon) and photoresist (Photo Resist) etc., the silicon nitride film 202 are used as the lower section film layer
Passivation layer, mask layer or block protective layer on 201 surfaces.For example, the basement membrane layer 201 is to be formed in semiconductor substrate
Grid on 200, the semiconductor devices are with the semiconductor substrate 200, the grid and the silicon nitride film 202
MOS transistor, the silicon nitride film 202 are formed as the side wall on the gate lateral wall through side wall etching technics after depositing；Example again
Such as, the basement membrane layer 201 is metal interconnection structure or metal interlayer medium (IMD), and the silicon nitride film 202 of deposition is made
For the passivation layer for stopping steam and removable ion to permeate downwards；For another example the basement membrane layer 201 is before-metal medium layer
(PMD), subsequent to need to form the metal layers such as copper, the silicon nitride film 202 of deposition is used as the resistance before subsequent metal layer is formed
Barrier stops to spread in the basad film layer 201 of the removable ion in the metal layer being subsequently formed and semiconductor substrate 200.
Referring to FIG. 3, in another embodiment of the invention, the semiconductor devices includes being layered in the silicon nitride film
The basement membrane layer 201 of 202 lower sections and the top film layer 203 being layered in above the silicon nitride film layer, the silicon nitride film 202 can
Using as etch the top film layer 203 when etching stop layer or etch basement membrane layer 201 mask layer, alternatively, described
Semiconductor devices is the floating gate type memory for including floating gate, the silicon nitride film 202 and control gate, and the basement membrane layer 201 is used
In forming the floating gate, the top film layer is used to form control gate, the silicon nitride film 202 be the floating gate and control gate it
Between storage medium material, between the silicon nitride film 202 and basement membrane layer 201 and the silicon nitride film 202 and top film
It is each formed with one layer of silica between layer 203, silicon nitride film 202 is clipped between two layers of silica and deposits together as the floating gate type
The storage medium of reservoir, i.e. ONO (oxide-nitride-oxide).
In conclusion the manufacturing method of semiconductor devices of the invention, due to using the system of silicon nitride film of the invention
Method is made to form required silicon nitride film, so as to improve the performance of semiconductor devices obtained.
Obviously, those skilled in the art can carry out various modification and variations without departing from spirit of the invention to invention
And range.If in this way, these modifications and changes of the present invention belong to the claims in the present invention and its equivalent technologies range it
Interior, then the present invention is also intended to include these modifications and variations.
Claims (12)
1. a kind of manufacturing method of silicon nitride film characterized by comprising
Using the first silicon source gas and the first nitrogen source gas, the first silicon nitride layer, first nitrogen are deposited on a substrate surface
Source gas and the reaction speed of first silicon source gas are the numbers of the reaction speed of first nitrogen source gas and the substrate
Ten times or more；
Using the second silicon source gas and the second nitrogen source gas, the second silicon nitride is deposited on the surface of first silicon nitride layer
Layer, the deposition rate of second silicon nitride layer are greater than the deposition rate of first silicon nitride layer.
2. the manufacturing method of silicon nitride film as described in claim 1, which is characterized in that the material of the substrate includes polycrystalline
At least one of medium, amorphous carbon, siliceous antireflection material and the photoresist of silicon, metal, dielectric constant lower than 3.
3. the manufacturing method of silicon nitride film as claimed in claim 2, which is characterized in that carbon containing in the material of the substrate.
4. the manufacturing method of silicon nitride film as described in claim 1, which is characterized in that first silicon source gas and described
Two silicon source gases respectively include in silane, disilane, dichlorosilane, trichlorosilane, tetrachloro silicane and disilicone hexachloride at least
It is a kind of.
5. the manufacturing method of silicon nitride film according to any one of claims 1 to 4, which is characterized in that first nitrogen source
Gas is free of ammonia.
6. the manufacturing method of silicon nitride film as claimed in claim 5, which is characterized in that first nitrogen source gas includes nitrogen
Gas.
7. the manufacturing method of silicon nitride film as claimed in claim 6, which is characterized in that the work of deposition first silicon nitride layer
Skill parameter includes: that deposition power isTechnological temperature is The silicon source gas
Flow isThe flow of nitrogen is 10000sccm~20000sccm.
8. the manufacturing method of silicon nitride film according to any one of claims 1 to 4, which is characterized in that second nitrogen source
Gas includes ammonia or including ammonia and nitrogen.
9. the manufacturing method of silicon nitride film as claimed in claim 8, which is characterized in that the work of deposition second silicon nitride layer
Skill parameter includes: that deposition power isTechnological temperature is The stream of the silicon source gas
Amount isThe flow of ammonia is The flow of nitrogen is
10. a kind of manufacturing method of semiconductor devices characterized by comprising using described in any one of claims 1 to 9
Silicon nitride film manufacturing method, form required silicon nitride film.
11. manufacturing method as claimed in claim 10, which is characterized in that the semiconductor devices be include floating gate, the nitrogen
The floating gate type memory of SiClx film and control gate, the silicon nitride film are formed between the floating gate and control gate and are used as one kind
Storage medium；Alternatively, the semiconductor devices is the MOS transistor with grid and the silicon nitride film, the silicon nitride film
It is formed on the gate lateral wall, is used as side wall.
12. manufacturing method as claimed in claim 10, which is characterized in that the semiconductor devices includes being layered in the nitridation
Lower section film layer below silicon fiml and/or the top film layer being layered in above the silicon nitride film layer, the silicon nitride film is as institute
Passivation layer, mask layer or the block protective layer on the film surface of lower section are stated, and/or, quarter when as the etching top film layer
Lose stop-layer.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113025991A (en) * | 2021-02-26 | 2021-06-25 | 长鑫存储技术有限公司 | Method for manufacturing semiconductor structure |
| CN113517170A (en) * | 2021-07-09 | 2021-10-19 | 长鑫存储技术有限公司 | Manufacturing method of semiconductor structure, semiconductor structure and memory |
| CN113594266A (en) * | 2021-07-15 | 2021-11-02 | 苏州鼎芯光电科技有限公司 | Protective layer of semiconductor photoelectric chip and preparation process of semiconductor |
| CN117594621A (en) * | 2024-01-17 | 2024-02-23 | 合肥晶合集成电路股份有限公司 | Image sensor manufacturing method and image sensor |
| CN117594621B (en) * | 2024-01-17 | 2024-04-26 | 合肥晶合集成电路股份有限公司 | Image sensor manufacturing method and image sensor |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1574248A (en) * | 2003-05-21 | 2005-02-02 | 尔必达存储器株式会社 | Method of manufacturing semiconductor device having nitride film with improved insulating properties |
| US20070012661A1 (en) * | 2005-07-13 | 2007-01-18 | Vasilyeva Irina V | Silicon nitride passivation layers having oxidized interface |
| US20080254203A1 (en) * | 2007-03-01 | 2008-10-16 | Lisong Zhou | Silicon nitride passivation for a solar cell |
| US20110086517A1 (en) * | 2008-03-31 | 2011-04-14 | Tokyo Electron Limited | Process for producing silicon nitride film, process for producing silicon nitride film laminate, computer-readable storage medium, and plasma cvd device |
| CN102130185A (en) * | 2011-01-26 | 2011-07-20 | 欧贝黎新能源科技股份有限公司 | Dual-layer silicon nitride film for crystalline silicon solar cell and preparation method thereof |
| US20160118239A1 (en) * | 2013-11-13 | 2016-04-28 | Everdisplay Optronics (Shanghai) Limited | Gate insulating layer and method for forming the same |
| CN106299025A (en) * | 2016-08-29 | 2017-01-04 | 奥特斯维能源（太仓）有限公司 | A kind of technique of tubular type PECVD deposited silicon nitride |
-
2018
- 2018-02-06 CN CN201810118984.1A patent/CN110120343B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1574248A (en) * | 2003-05-21 | 2005-02-02 | 尔必达存储器株式会社 | Method of manufacturing semiconductor device having nitride film with improved insulating properties |
| US20070012661A1 (en) * | 2005-07-13 | 2007-01-18 | Vasilyeva Irina V | Silicon nitride passivation layers having oxidized interface |
| US20080254203A1 (en) * | 2007-03-01 | 2008-10-16 | Lisong Zhou | Silicon nitride passivation for a solar cell |
| US20110086517A1 (en) * | 2008-03-31 | 2011-04-14 | Tokyo Electron Limited | Process for producing silicon nitride film, process for producing silicon nitride film laminate, computer-readable storage medium, and plasma cvd device |
| CN102130185A (en) * | 2011-01-26 | 2011-07-20 | 欧贝黎新能源科技股份有限公司 | Dual-layer silicon nitride film for crystalline silicon solar cell and preparation method thereof |
| US20160118239A1 (en) * | 2013-11-13 | 2016-04-28 | Everdisplay Optronics (Shanghai) Limited | Gate insulating layer and method for forming the same |
| CN106299025A (en) * | 2016-08-29 | 2017-01-04 | 奥特斯维能源（太仓）有限公司 | A kind of technique of tubular type PECVD deposited silicon nitride |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113025991A (en) * | 2021-02-26 | 2021-06-25 | 长鑫存储技术有限公司 | Method for manufacturing semiconductor structure |
| US11942320B2 (en) | 2021-02-26 | 2024-03-26 | Changxin Memory Technologies, Inc. | Method of manufacturing semiconductor structure |
| CN113517170A (en) * | 2021-07-09 | 2021-10-19 | 长鑫存储技术有限公司 | Manufacturing method of semiconductor structure, semiconductor structure and memory |
| CN113517170B (en) * | 2021-07-09 | 2024-02-09 | 长鑫存储技术有限公司 | Method for manufacturing semiconductor structure, semiconductor structure and memory |
| CN113594266A (en) * | 2021-07-15 | 2021-11-02 | 苏州鼎芯光电科技有限公司 | Protective layer of semiconductor photoelectric chip and preparation process of semiconductor |
| CN113594266B (en) * | 2021-07-15 | 2024-01-02 | 苏州鼎芯光电科技有限公司 | Protective layer of semiconductor photoelectric chip and preparation process of semiconductor of protective layer |
| CN117594621A (en) * | 2024-01-17 | 2024-02-23 | 合肥晶合集成电路股份有限公司 | Image sensor manufacturing method and image sensor |
| CN117594621B (en) * | 2024-01-17 | 2024-04-26 | 合肥晶合集成电路股份有限公司 | Image sensor manufacturing method and image sensor |
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