CN112532080A - High-efficiency control method and device for silicon carbide power electronic converter and converter - Google Patents
High-efficiency control method and device for silicon carbide power electronic converter and converter Download PDFInfo
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- CN112532080A CN112532080A CN202011383249.7A CN202011383249A CN112532080A CN 112532080 A CN112532080 A CN 112532080A CN 202011383249 A CN202011383249 A CN 202011383249A CN 112532080 A CN112532080 A CN 112532080A
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- silicon carbide
- power electronic
- bridge arm
- electronic converter
- load
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/145—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
- H02M7/155—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
- H02M7/162—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only in a bridge configuration
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Rectifiers (AREA)
Abstract
The invention relates to a high-efficiency control method and device for a silicon carbide power electronic converter and the converter, wherein the control method comprises the following steps: dynamically adjusting dead time of a bridge arm in real time according to the load of the silicon carbide power electronic converter; based on the current dead time of the bridge arm, immediately controlling the silicon carbide MOSFET to conduct the switch conduction work of the synchronous rectification mode after the intermediate diode is conducted when the bridge arm is dead. Compared with the prior art, the invention has the advantages of high reliability, reduced conduction loss, improved efficiency and the like.
Description
Technical Field
The invention relates to the field of power electronics, in particular to a high-efficiency control method and device for a silicon carbide power electronic converter and the converter.
Background
Due to high switching loss of a silicon IGBT device, the efficiency of the existing three-phase power electronic converter based on the silicon IGBT (insulated gate bipolar transistor) is difficult to further improve, and the circuit structure is shown in FIG. 1. Meanwhile, the turn-on and turn-off time of the silicon IGBT device is about hundreds of nanoseconds, and the silicon IGBT device is required to be turned off so that current trailing exists, so that a longer dead time is required to be set to avoid a bridge arm direct connection fault of the three-phase power electronic converter, and certain influence is also caused on the efficiency. In addition, because the silicon IGBT device is a unipolar device, the conduction loss is large in the full-load range, and especially under light load, the conduction loss is large, so that the efficiency is difficult to improve under partial load and light load. There is therefore a need for improvements in existing three-phase power electronic converters and their control.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a high-efficiency control method, a device and a converter of a silicon carbide power electronic converter, which have high reliability and reduce conduction loss.
The purpose of the invention can be realized by the following technical scheme:
a high-efficiency control method for a silicon carbide power electronic converter comprises the following steps:
dynamically adjusting dead time of a bridge arm in real time according to the load of the silicon carbide power electronic converter;
based on the current dead time of the bridge arm, immediately controlling the silicon carbide MOSFET to conduct the switch conduction work of the synchronous rectification mode after the intermediate diode is conducted when the bridge arm is dead.
Further, the dynamic real-time adjustment of the dead time of the bridge arm according to the load of the silicon carbide power electronic converter specifically comprises:
and reducing the dead time of the bridge arm during light load, and increasing the dead time of the bridge arm during heavy load.
Further, the light load is a load factor of 30% or less, and the heavy load is a load factor of 70% or more.
Further, within 1-2 nanoseconds after the body diode is conducted, the silicon carbide MOSFET conducts the synchronous rectification mode switch.
The invention also provides a high-efficiency control device of the silicon carbide power electronic converter, which comprises the following components:
the dead time dynamic adjusting module is used for dynamically adjusting the dead time of the bridge arm in real time according to the load of the silicon carbide power electronic converter;
and the switch working mode control module is used for immediately controlling the silicon carbide MOSFET to conduct the switch conduction work of the synchronous rectification mode after the intermediate diode is conducted based on the current dead time of the bridge arm.
Further, the dynamic real-time adjustment of the dead time of the bridge arm according to the load of the silicon carbide power electronic converter specifically comprises:
and reducing the dead time of the bridge arm during light load, and increasing the dead time of the bridge arm during heavy load.
Further, the light load is a load factor of 30% or less, and the heavy load is a load factor of 70% or more.
Further, within 1-2 nanoseconds after the body diode is conducted, the silicon carbide MOSFET conducts the synchronous rectification mode switch.
The present invention also provides a computer readable storage medium containing one or more programs for execution by one or more processors of an electronic device, the one or more programs including instructions for performing a method of high efficiency control of a silicon carbide power electronic converter as described above.
The invention also provides a silicon carbide power electronic converter, and the working process control is realized based on the high-efficiency control method.
Compared with the prior art, the invention has the following beneficial effects:
1. compared with a silicon IGBT three-phase power electronic converter, the invention utilizes the high-speed switching-on and switching-off characteristics of the silicon carbide MOSFET to control the variable dead time under different loads of the silicon carbide three-phase power electronic converter, dynamically adjusts the dead time of the bridge arm switching tube in real time according to the load of the silicon carbide three-phase power electronic converter, reduces the dead time of the bridge arm switching tube under light load, increases the dead time of the bridge arm switching tube under heavy load, improves the efficiency of the silicon carbide three-phase power electronic converter under the full load range, ensures that the bridge arm of the silicon carbide three-phase power electronic converter is not directly connected, and realizes high reliability.
2. Compared with a silicon IGBT three-phase power electronic converter, the invention utilizes the unipolar characteristic and parasitic diode characteristic of the silicon carbide MOSFET to immediately control the silicon carbide MOSFET to carry out synchronous rectification mode switching after the intermediate diode is conducted when the bridge arm dead zone of the silicon carbide MOSFET is switched on, thereby reducing the conduction loss of the silicon carbide three-phase power electronic converter and improving the efficiency of the silicon carbide three-phase power electronic converter.
3. According to the invention, the conduction loss of the three-phase power electronic converter is reduced through synchronous rectification control and dynamic dead time control, and the efficiency of the three-phase power electronic converter is improved, and experiments show that the conduction loss of the three-phase power electronic converter can be reduced by 5-20%.
Drawings
FIG. 1 is a schematic diagram of a three-phase power conversion circuit based on a silicon IGBT;
fig. 2 is a three-phase power conversion circuit based on silicon carbide MOSFETs.
FIG. 3 is a flow chart of a control method of the present invention;
FIG. 4 is a comparison graph of segment 1 switching patterns based on silicon IGBTs and silicon carbide MOSFETs in a 12 segment space vector control switching pattern;
fig. 5-11 are comparative circuit diagrams of section 1 modes 1-7 based on silicon IGBTs and silicon carbide MOSFETs.
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments. The present embodiment is implemented on the premise of the technical solution of the present invention, and a detailed implementation manner and a specific operation process are given, but the scope of the present invention is not limited to the following embodiments.
Example 1
The embodiment provides a high-efficiency control method of a silicon carbide power electronic converter, which is applied to a three-phase power conversion circuit based on a silicon carbide MOSFET (metal-oxide-semiconductor field effect transistor) as shown in FIG. 2. As shown in fig. 3, the method comprises the steps of:
s01, the silicon carbide power electronic converter receives a control signal command to start working;
s02, dynamically adjusting dead time of a bridge arm in real time according to the load of the silicon carbide power electronic converter;
s03, based on the current dead time of the bridge arm, immediately controlling the silicon carbide MOSFET to conduct the switch conduction work in the synchronous rectification mode after the intermediate diode is conducted in the dead time of the bridge arm;
and S04, the silicon carbide power electronic converter receives the control signal to command to stop working.
In step S02, the dynamic real-time adjustment of the dead time of the bridge arm according to the load of the silicon carbide power electronic converter specifically includes: and reducing the dead time of the bridge arm during light load, and increasing the dead time of the bridge arm during heavy load. In the embodiment, the light load is a load factor of below 30%, and the heavy load is a load factor of above 70%, which is beneficial to improving the efficiency of the silicon carbide three-phase power electronic converter in the full load range.
In step S03 of this embodiment, within 1 to 2 nanoseconds after the body diode is turned on, the silicon carbide MOSFET performs the on operation of the synchronous rectification mode switch, as shown in fig. 4, so as to effectively reduce the conduction loss of the silicon carbide three-phase power electronic converter and improve the efficiency of the silicon carbide three-phase power electronic converter.
Fig. 5-11 are schematic diagrams illustrating the conversion between modal circuits in the synchronous rectification mode. From 5 to 11, the silicon carbide MOSFET-based three-phase power electronic converter can effectively reduce the conduction loss and improve the efficiency of the three-phase power electronic converter under the action of the dynamic dead time control and the synchronous rectification control.
The above functions, if implemented in the form of software functional units and sold or used as a separate product, may be stored in a computer-readable storage medium. Based on such understanding, the technical solution of the present invention may be embodied in the form of a software product, which is stored in a storage medium and includes instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk or an optical disk, and other various media capable of storing program codes.
Example 2
The embodiment provides a high-efficiency control device for a silicon carbide power electronic converter, which comprises a dead time dynamic adjusting module and a switch working mode control module, wherein the dead time dynamic adjusting module is used for dynamically adjusting the dead time of a bridge arm in real time according to the load of the silicon carbide power electronic converter; and the switch working mode control module is used for immediately controlling the silicon carbide MOSFET to conduct the switch conduction work of the synchronous rectification mode after the intermediate diode is conducted based on the current dead time of the bridge arm. The rest is the same as example 1.
Example 3
The present embodiment provides a silicon carbide power electronic converter, which implements the working process control based on the high efficiency control method as described in embodiment 1.
The foregoing detailed description of the preferred embodiments of the invention has been presented. It should be understood that numerous modifications and variations could be devised by those skilled in the art in light of the present teachings without departing from the inventive concepts. Therefore, the technical solutions available to those skilled in the art through logic analysis, reasoning and limited experiments based on the prior art according to the concept of the present invention should be within the scope of protection defined by the claims.
Claims (10)
1. A high-efficiency control method for a silicon carbide power electronic converter is characterized by comprising the following steps:
dynamically adjusting dead time of a bridge arm in real time according to the load of the silicon carbide power electronic converter;
based on the current dead time of the bridge arm, immediately controlling the silicon carbide MOSFET to conduct the switch conduction work of the synchronous rectification mode after the intermediate diode is conducted when the bridge arm is dead.
2. The high-efficiency control method for the silicon carbide power electronic converter according to claim 1, wherein the dynamic real-time adjustment of the dead time of the bridge arm according to the load of the silicon carbide power electronic converter specifically comprises:
and reducing the dead time of the bridge arm during light load, and increasing the dead time of the bridge arm during heavy load.
3. The method of claim 2, wherein the light load is a load factor of 30% or less, and the heavy load is a load factor of 70% or more.
4. The method for controlling the high efficiency of the silicon carbide power electronic converter according to claim 1, wherein the silicon carbide MOSFET performs a synchronous rectification mode switch conduction operation within 1-2 nanoseconds after the body diode is conducted.
5. A silicon carbide power electronic converter high efficiency control device, comprising:
the dead time dynamic adjusting module is used for dynamically adjusting the dead time of the bridge arm in real time according to the load of the silicon carbide power electronic converter;
and the switch working mode control module is used for immediately controlling the silicon carbide MOSFET to conduct the switch conduction work of the synchronous rectification mode after the intermediate diode is conducted based on the current dead time of the bridge arm.
6. The silicon carbide power electronic converter high efficiency control device according to claim 5, wherein the dynamic real-time adjustment of the bridge arm dead time according to the load size of the silicon carbide power electronic converter specifically comprises:
and reducing the dead time of the bridge arm during light load, and increasing the dead time of the bridge arm during heavy load.
7. The apparatus of claim 6, wherein the light load is a load factor of 30% or less, and the heavy load is a load factor of 70% or more.
8. The apparatus of claim 5, wherein the silicon carbide MOSFET performs synchronous rectification mode switching conduction within 1-2 nanoseconds after the body diode is conducted.
9. A computer readable storage medium comprising one or more programs for execution by one or more processors of an electronic device, the one or more programs comprising instructions for performing the silicon carbide power electronic converter high efficiency control method of any of claims 1-4.
10. A silicon carbide power electronic converter, characterized in that the working process control is realized based on the high efficiency control method as claimed in any one of claims 1 to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011383249.7A CN112532080A (en) | 2020-12-01 | 2020-12-01 | High-efficiency control method and device for silicon carbide power electronic converter and converter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011383249.7A CN112532080A (en) | 2020-12-01 | 2020-12-01 | High-efficiency control method and device for silicon carbide power electronic converter and converter |
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| CN112532080A true CN112532080A (en) | 2021-03-19 |
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| CN202011383249.7A Pending CN112532080A (en) | 2020-12-01 | 2020-12-01 | High-efficiency control method and device for silicon carbide power electronic converter and converter |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007014059A (en) * | 2005-06-28 | 2007-01-18 | Toyota Motor Corp | Switching circuit |
| CN1992488A (en) * | 2005-12-26 | 2007-07-04 | 中兴通讯股份有限公司 | Synchronous rectification device |
| CN106160447A (en) * | 2016-07-08 | 2016-11-23 | 南京航空航天大学 | A kind of Dead Time optimal control method being applicable to SiC base brachium pontis power circuit |
| JP2018102085A (en) * | 2016-12-21 | 2018-06-28 | Fdk株式会社 | Switching power supply |
| CN110277919A (en) * | 2018-03-15 | 2019-09-24 | 联合汽车电子有限公司 | A kind of method of real-time dead time of the amendment DC/DC converter under Sofe Switch |
-
2020
- 2020-12-01 CN CN202011383249.7A patent/CN112532080A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007014059A (en) * | 2005-06-28 | 2007-01-18 | Toyota Motor Corp | Switching circuit |
| CN1992488A (en) * | 2005-12-26 | 2007-07-04 | 中兴通讯股份有限公司 | Synchronous rectification device |
| CN106160447A (en) * | 2016-07-08 | 2016-11-23 | 南京航空航天大学 | A kind of Dead Time optimal control method being applicable to SiC base brachium pontis power circuit |
| JP2018102085A (en) * | 2016-12-21 | 2018-06-28 | Fdk株式会社 | Switching power supply |
| CN110277919A (en) * | 2018-03-15 | 2019-09-24 | 联合汽车电子有限公司 | A kind of method of real-time dead time of the amendment DC/DC converter under Sofe Switch |
Non-Patent Citations (2)
| Title |
|---|
| SHAN YIN ET AL.: "Comparison of SiC Voltage Source Inverters Using Synchronous Rectification and Freewheeling Diode", 《IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS》 * |
| ZHEYU ZHANG ET AL.: "Dead-time optimization of SiC devices for voltage source converter", 《2015 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC)》 * |
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