CN112531081B - Preparation method of UV LED and UV LED - Google Patents
Preparation method of UV LED and UV LED Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 230000012010 growth Effects 0.000 claims abstract description 23
- 229910052738 indium Inorganic materials 0.000 claims abstract description 17
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 42
- 230000004888 barrier function Effects 0.000 claims description 35
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 22
- 229910052733 gallium Inorganic materials 0.000 claims description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 19
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical group C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 8
- 238000004020 luminiscence type Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 96
- 230000000052 comparative effect Effects 0.000 description 11
- 238000001816 cooling Methods 0.000 description 8
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000004907 flux Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000011324 bead Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 210000003491 skin Anatomy 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 239000007771 core particle Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- 102000008186 Collagen Human genes 0.000 description 1
- 108010035532 Collagen Proteins 0.000 description 1
- 241000255925 Diptera Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001436 collagen Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 210000004207 dermis Anatomy 0.000 description 1
- 210000004177 elastic tissue Anatomy 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000008029 eradication Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007903 penetration ability Effects 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 238000001126 phototherapy Methods 0.000 description 1
- 230000008635 plant growth Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention provides a preparation method of a UV LED and the UV LED. According to the preparation method of the UV LED, the limitation effect of the UV LED on electrons can be enhanced by controlling the growth temperature of the first multiple quantum well structure and the second multiple quantum well structure, the flow of the indium source, the growth position and other factors, the UV radiation efficiency is improved, and the luminescence of visible light is increased, so that the UV LED with adjustable dominant wavelength, adjustable lumen intensity, controllable lumen intensity of the dominant wavelength among batches and good uniformity is prepared. The UV LED provided by the invention has the advantages of adjustable dominant wavelength, adjustable lumen intensity, controllable lumen intensity of the dominant wavelength among batches and good uniformity.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and relates to a preparation method of a UV LED and the UV LED.
Background
In recent years, UV LEDs (ultraviolet light emitting diodes) have been widely used in electronics, precision parts, optical lenses, liquid crystal display panels, hard disks, and other emerging fields due to their advantages of ultra-long service life, no thermal radiation, low heat generation, low energy consumption, no pollution, and the like.
Each different uv wavelength type has its specific application. UVA (320-400nm) is widely applied at present, has strong penetrating power, can penetrate most transparent glass and plastic, can also penetrate through an ozone layer and a cloud layer to reach the dermis layer of skin, destroys elastic fibers and collagen fibers, and can be used for tanning the skin, and can be applied to the industrial fields of industrial curing, PCB exposure, photocatalyst and the like, and the daily life fields of nail beautification, mosquito eradication and the like. UVB (280-320nm) has medium penetrating power, most of UVB in sunlight is absorbed by an ozone layer, only less than 2 percent of UVB can reach the earth surface, and the UVB can be applied to the fields of phototherapy and plant growth. The penetration ability of UVC (200-280nm) is the weakest, the short wave ultraviolet ray in the sunlight is almost completely absorbed by the ozone layer, the damage to the human body is great, the skin can be burnt by short-time irradiation, and the ultraviolet-ray-resistant UV-curable coating is mainly applied to the field of sterilization and disinfection.
The UV LED emits visible light except for the 380-400 nm band, and the rest bands are invisible light; the light source emitted during working is basically invisible light, but due to the existence of adverse factors such as vacancy, impurity defect and the like in the epitaxial growth process of an AlInGaN system, the UV LED can emit mixed light such as purple, blue, yellow and the like during working, even can directly emit white light, and due to the inconsistency of stability and uniformity of defect control in the epitaxial growth process, the luminous color difference of UV LED core particles in a batch is difficult to unify, meanwhile, the UV LED core particles with color difference are difficult to distinguish by chip test Bin, the luminous flux is difficult to be consistent, so that the problems of visible color difference, uneven brightness and the like appear between packaged devices in a batch and even in a batch are caused. Therefore, it is necessary to find a UV LED with adjustable light color.
Disclosure of Invention
The invention provides a preparation method of a UV LED, which can enhance the limiting effect of the UV LED on electrons, improve the UV radiation efficiency and increase the luminescence of visible light by controlling the factors such as temperature, indium source flow, growth position and the like in the growth process of a first multiple quantum well structure and a second multiple quantum well structure, thereby preparing the UV LED with adjustable dominant wavelength, adjustable lumen intensity, controllable dominant wavelength lumen intensity among batches and good uniformity and adjustable light color.
The invention also provides a UV LED which has the advantages of adjustable dominant wavelength, adjustable lumen intensity, controllable lumen intensity of the dominant wavelength among batches and good uniformity.
The invention provides a preparation method of a UV LED, which comprises the following two embodiments:
the first embodiment comprises the following steps:
1) introducing a gallium source, an aluminum source and a nitrogen source into the reaction chamber, and growing a first multiple quantum well unit barrier layer at the temperature of 900-;
then, controlling the flow of the introduced gallium source to be 50-200sccm, the flow of the indium source to be 60-170sccm and the flow of the nitrogen source to be 5-80sl, and growing a first multi-quantum well unit potential well layer on the first multi-quantum well unit barrier layer at the temperature of 810-;
repeating the step 1) for T times to obtain T first multiple quantum well units;
2) introducing a gallium source, an aluminum source and a nitrogen source into the reaction chamber, and growing a second multi-quantum well unit barrier layer on the Tth first multi-quantum well unit at the temperature of 900-;
then, controlling the flow of the introduced gallium source to be 50-200sccm, the flow of the indium source to be 180-500sccm and the flow of the nitrogen source to be 5-80sl, and growing a second multi-quantum well unit potential well layer on the second multi-quantum well unit potential barrier layer at the temperature of 700-800 ℃;
repeating the step 2) M times to obtain M second multiple quantum well units;
3) repeating the step 1) for P times to obtain P first multiple quantum well units; wherein P + T ═ N;
wherein M is 1 or 2;
the second embodiment comprises the following steps:
1) introducing a gallium source, an aluminum source and a nitrogen source into the reaction chamber, and growing a second multi-quantum well unit barrier layer at the temperature of 900-;
then, controlling the flow of the introduced gallium source to be 50-200sccm, the flow of the indium source to be 180-fold-flow 500sccm and the flow of the nitrogen source to be 5-80sl, and growing a second multi-quantum-well unit potential well layer on the second multi-quantum-well unit barrier layer at the temperature of 700-fold-flow 800 ℃;
repeating the step M times to obtain M second multiple quantum well units;
2) introducing a gallium source, an aluminum source and a nitrogen source into the reaction chamber, and growing a first multi-quantum well unit barrier layer on the Mth second multi-quantum well unit at the temperature of 900-;
then, controlling the flow of the introduced gallium source to be 50-200sccm, the flow of the indium source to be 60-170sccm and the flow of the nitrogen source to be 5-80sl, and growing a first multi-quantum well unit potential well layer on the first multi-quantum well unit barrier layer at the temperature of 810-;
and repeating the step N times to obtain N first multiple quantum well units.
Wherein M is 1 or 2.
The light-emitting main wavelength band of the traditional UV LED is less than 380nm, the light-emitting main wavelength band belongs to a blind area visible to human eyes, the visible part of naked eyes is a mixed peak of 400-600 nm, the forming mechanism of the mixed peak is complex, the process is difficult to control the main wavelength and the lumen intensity of the mixed peak light-emitting, and in the preparation method of the UV LED, the growth conditions of the potential well layer of the first multiple quantum well unit are controlled as follows: the flow of the introduced gallium source is 50-200sccm, the flow of the indium source is 60-170sccm, the flow of the nitrogen source is 5-80sl, the temperature is 810-: the flow of the introduced gallium source is controlled to be 50-200sccm, the flow of the indium source is controlled to be 180-500sccm, the flow of the nitrogen source is controlled to be 5-80sl, and the temperature is 700-800 ℃, so that the light-color-modulated UV LED with adjustable dominant wavelength, adjustable lumen intensity, controllable lumen intensity of the dominant wavelength among batches and good uniformity can be grown. The inventor concludes that the forbidden band widths of the potential well layers of the first multiple quantum well unit and the second multiple quantum well unit of the UV LED can be adjusted through controlling the growth conditions, so that the limiting effect on electrons is enhanced, the visible light waveform of 380nm and 550nm is blended in the original UV light emitting waveform of the UV LED, and the regulation and control effect on the dominant wavelength and the lumen intensity is finally realized.
Specifically, the number M of second multiple quantum well units in the above-described manufacturing method is 1 or 2. When M is more than 2, the UV absorption is serious, the UV radiation intensity is obviously reduced, and the obtained UV LED product cannot meet the market standard.
Further, in order to reduce the influence on the luminous intensity of the UV radiation, at least 3 first multiple quantum well units are grown above the surface of the second multiple quantum well structure far away from the substrate.
The inventor finds in the research process that when the growth number of the first multiple quantum well units is controlled to be 3-15, the UV LED can have a good dimming effect. When the number of the first multiple quantum well units is less than 3, the restriction effect on electrons is small, electron overflow and hole combination form non-radiative recombination, the probability of electron and hole recombination can be reduced, and the luminous intensity of UV radiation is too low; when the number of the first multiple quantum well units is more than 15, the stress of the UV LED structure is overlarge, the crystal quality is accelerated to deteriorate, the probability of non-radiative recombination is increased, and the reduction of UV radiation efficiency is obvious.
In the method for manufacturing the UV LED, the reaction chamber is an MOCVD reaction chamber. The UV LED grows in the MOCVD reaction chamber, so that the growth of different functional layers in the UV LED structure can be accurately controlled, and the pollution in the growth process is small.
Further, the pressure of the reaction chamber is 50-500Torr, and the pressure range can enable the UV LED to have more excellent dimming effect.
In one possible embodiment, the growth thickness of the first multiple quantum well cell barrier layer or the second multiple quantum well cell barrier layer may be controlled to 5 to 20nm by adjusting the growth time of the barrier layers.
In another possible embodiment, the growth thickness of the well layer of the first multiple quantum well unit or the well layer of the second multiple quantum well unit can be controlled to be 1 to 5nm by adjusting the growth time of the well layer.
The thicknesses of the barrier layers and the potential well layers in the first multi-quantum well unit and the second multi-quantum well unit are too large, so that electrons cannot be efficiently and uniformly injected into each well; too small thickness, too large tunneling current.
In the method for manufacturing the UV LED, the gallium source is selected from one of trimethyl gallium (TMGa) and triethyl gallium (TEGa).
In the above method for manufacturing the UV LED, the indium source is trimethyl indium (TMIn).
The aluminum source and the nitrogen source are not particularly limited and may be selected from those conventional in the art, for example, the aluminum source may be selected from trimethylaluminum (TMAl) or triethylaluminum (TEAl), and the nitrogen source may be selected from high-purity ammonia (NH)3)。
A preparation method of a UV LED comprises the steps of preparing a low-temperature buffer layer, an unintended doping layer, an n-type doping layer, a quantum well transition layer, a p-type doping layer, a metal contact layer and the like besides preparing a first multi-quantum well structure and a second multi-quantum well structure through the steps, and all the preparation methods in the field can be adopted, such as an MOCVD method.
In another aspect, the invention provides a UV LED obtained by the preparation method of the first aspect.
When the preparation method is the first embodiment, the structure of the UV LED includes: the first multi-quantum well structure is positioned on the surface, far away from the substrate, of the second multi-quantum well structure, wherein the first multi-quantum well structure comprises N first multi-quantum well units, the second multi-quantum well structure comprises M second multi-quantum well units, N is greater than or equal to 1 and is an integer, and M is 1 or 2.
Fig. 1 is a schematic structural view of a UV LED according to an embodiment of the present invention, and as shown in fig. 1, a first multiple quantum well structure 15b is located on a surface of a second multiple quantum well structure 15a away from a substrate 10. Wherein the second multi-quantum well structure 15a includes a second multi-quantum well cell barrier layer 15a1 and a second multi-quantum well cell well layer 15a2, and the first multi-quantum well structure 15b includes a first multi-quantum well cell barrier layer 15b1 and a second multi-quantum well cell well layer 15b 2. The second multiple quantum well cell barrier layer 15a1 and the second multiple quantum well cell well layer 15a2 are a second multiple quantum well cell, and the first multiple quantum well cell barrier layer 15b1 and the first multiple quantum well cell well layer 15b2 are a first multiple quantum well cell. The UV LED comprises a substrate 10, a low-temperature buffer layer 11, an unintentional doping layer 12, an n-type doping layer 13, a quantum well transition layer 14, a p-type doping layer 16 and a metal contact layer 17 in sequence from bottom to top besides a first multiple quantum well structure 15b and a second multiple quantum well structure 15 a.
When the manufacturing method is the second embodiment of the manufacturing method of the foregoing first aspect, the structure of the UV LED includes: the multi-quantum well structure comprises a first multi-quantum well structure and a second multi-quantum well structure, wherein the second multi-quantum well structure is positioned in the first multi-quantum well structure, the first multi-quantum well structure comprises N first multi-quantum well units, the second multi-quantum well structure comprises M second multi-quantum well units, N is not less than 1 and is an integer, and M is 1 or 2.
Fig. 2 is a schematic view of a UV LED structure according to another embodiment of the present invention, and the UV LED structure shown in fig. 2 is substantially identical to that of fig. 1 except that a second multiple quantum well structure 15a is located inside a first multiple quantum well structure 15 b.
According to the invention, by controlling the growth temperature of the UV LED and introducing factors such as gallium source, indium source and nitrogen source flow in the preparation process, the potential well layer of the first multi-quantum well unit and the potential well layer of the second multi-quantum well unit in the UV LED have a proper forbidden bandwidth range, for example, the forbidden bandwidth of the potential well layer of the first multi-quantum well unit is 3.2-4.8eV, and the forbidden bandwidth of the potential well layer of the second multi-quantum well unit is 2.5-3.1eV, so that the UV LED has a good light color adjustable effect.
The implementation of the invention has at least the following advantages:
1. according to the preparation method of the UV LED, the limiting effect of the UV LED on electrons can be enhanced, the UV radiation efficiency is improved, and the luminescence of visible light is increased through controlling the factors such as the temperature, the indium source flow rate and the growth position in the growth process of the first multiple quantum well structure and the second multiple quantum well structure, so that the UV LED with adjustable dominant wavelength, adjustable lumen intensity, controllable lumen intensity of the dominant wavelength among batches and good uniformity is prepared.
2. The UV LED provided by the invention has the advantages of adjustable dominant wavelength, adjustable lumen intensity, controllable lumen intensity of the dominant wavelength among batches and good uniformity.
Drawings
FIG. 1 is a schematic diagram of a UV LED structure according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a UV LED structure according to another embodiment of the present invention.
Description of reference numerals:
10: a substrate;
11: a low temperature buffer layer;
12: an unintentionally doped layer;
13: an n-type doped layer;
14: a quantum well transition layer;
15 a: a second multi-quantum well structure;
15a 1: a second multiple quantum well cell barrier layer;
15a 2: a second multiple quantum well unit potential well layer;
15 b: a first multi-quantum well structure;
15b 1: a first multi-quantum well cell barrier layer;
15b 2: a first multiple quantum well unit potential well layer;
16: a p-type doped layer;
17: a metal contact layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The experimental procedures used in the following examples and comparative examples are conventional unless otherwise specified.
Materials, reagents and the like used in the following examples and comparative examples are commercially available unless otherwise specified.
Example 1
The UV LED of this example is substantially the same as fig. 2, and the specific preparation process is as follows:
1) heating an MOCVD reaction chamber to 1080 ℃ under 200Torr, and carrying out high-temperature treatment on the (002) surface sapphire substrate 10 for 5 minutes; cooling to 530 deg.C, nitridizing with TEGa, TMIn, TMAl, and NH respectively3SiH as gallium, indium, aluminum, nitrogen source4Is an n-type dopant, Cp2Mg as a p-type dopant, N2As carrier gas, various gas sources are sent into the MOCVD reaction chamber; continuing to grow a GaN layer with the thickness of 35nm at 530 ℃ to serve as a low-temperature buffer layer 11; heating to 1080 ℃, and growing a GaN layer with the thickness of 2.0 mu m as an unintended doping layer 12; cooling to 1070 deg.C, growing Si-doped n-GaN layer with thickness of 2.0 μm as n-type doped layer 13 with n doping concentration of 5E +18atom/cm3(ii) a Cooling to 820 deg.C, growing Si-doped GaN layer with thickness of 300nm as quantum well transition layer 14, wherein n doping concentration is 8E +17atom/cm3。
2) Heating the reaction chamber to 900 ℃, controlling the flow of introduced TEGa to be 400sccm, the flow of TMAl to be 150sccm and NH3With a flow rate of 30sl, a first multiple quantum well cell barrier layer 15b1 with a thickness of 12nm was grown on the quantum well transition layer 14; cooling to 820 deg.C, controlling TEGa flow at 200sccm, TMIn flow at 120sccm, and NH3A first multiple quantum well cell well layer 15b2 was grown at a thickness of 2.5nm on the first multiple quantum well cell barrier layer 15b1 at a flux of 50 sl.
3) Repeating the step 2)6 times to obtain 6 first multiple quantum well units.
4) Heating to 900 deg.C, controlling the flow rate of TEGa to 400sccm, TMAl to 150sccm, and NH3A second multiple quantum well unit barrier layer 15a1 with the thickness of 12nm is grown on the 6 th first multiple quantum well unit with the flow of 30 sl; cooling to 770 ℃, controlling the flow rate of TEGa to be 100sccm, the flow rate of TMIn to be 220sccm and NH3With a flow rate of 50sl, a second multiple quantum well cell well layer 15a2 with a thickness of 2.5nm was grown on the second multiple quantum well cell barrier layer 15a 1.
5) And (4) repeating the step 4) for 2 times to obtain 2 second multiple quantum well units.
6) Repeating the step 2)6 times to obtain 6 first multiple quantum well units.
7) The temperature is raised to 900 c and the last first multiple quantum well cell barrier layer 15b1 is grown to a thickness of 12 nm. Heating to 980 deg.C, and growing Mg-doped p-GaN layer with thickness of 250nm as p-type doped layer 16 on the 12 th first multiple quantum well unit with p-doping concentration of 1E +20atom/cm3(ii) a Cooling to 750 deg.C, growing to thicknessA 2nm Mg doped GaN layer was used as the metal contact layer 17 and maintained at this temperature for 10 minutes for a final anneal.
Example 2
The structure of the UV LED in this embodiment is substantially the same as that shown in fig. 2, and the specific process of processing the substrate 10 in the preparation process, the growth methods of the low-temperature buffer layer 11, the unintentional doping layer 12, the n-type doping layer 13, the quantum well transition layer 14, the p-type doping layer 16, and the metal contact layer 17 are the same as those in embodiment 1, and are not described herein again. Different from the embodiment 1, the parameters in the steps 2) to 6) are adjusted as follows:
2) heating the reaction chamber to 900 ℃, controlling the flow of introduced TEGa to be 250sccm, the flow of TMAl to be 100sccm and NH3A first multiple quantum well unit barrier layer 15b1 with the thickness of 12nm is grown on the quantum well transition layer 14 at the flow rate of 50 sl; cooling to 820 deg.C, controlling TEGa flow at 200sccm, TMIn flow at 120sccm, and NH3A first multiple quantum well cell well layer 15b2 was grown at a thickness of 2.5nm on the first multiple quantum well cell barrier layer 15b1 at a flux of 50 sl.
3) Repeating the step 2) for 8 times to obtain 8 first multiple quantum well units.
4) Heating to 900 deg.C, controlling the flow rate of introduced TEGa at 250sccm, TMAl at 20sccm, and NH3Growing a second multiple quantum well unit barrier layer 15a1 with the thickness of 12nm on the 8 th first multiple quantum well unit with the flow of 50 sl; cooling to 760 ℃, controlling the flow rate of TEGa to be 200sccm, the flow rate of TMIn to be 280sccm and NH3With a flow rate of 50sl, a second multiple quantum well cell well layer 15a2 with a thickness of 2.5nm was grown on the second multiple quantum well cell barrier layer 15a 1.
5) And (4) repeating the step 4) for 2 times to obtain 2 second multiple quantum well units.
6) Repeating the step 2) for 4 times to obtain 4 first multiple quantum well units.
Example 3
The structure of the UV LED of this example is substantially the same as that of fig. 2, and the specific manufacturing process is different from that of example 2 in that: step 5) is omitted, only 1 second multiple quantum well unit is grown, and the rest steps are the same and are not described again.
Comparative example 1
The structure of the UV LED of this comparative example is substantially the same as that of fig. 2, and the specific manufacturing process is different from that of example 2 in that: and step 5) repeating step 4) for 3 times to obtain 3 second multiple quantum well units, wherein the rest steps are the same and are not repeated.
Comparative example 2
The difference between the UV LED structure of this comparative example and example 1 is that there is no second quantum well structure, the rest is the same as example 1, 12 first multiple quantum well units are grown, and the preparation process of the UV LED is the same as example 1, and is not described herein again.
Test examples
100 packaged lamp beads are extracted from each of the UV LEDs prepared in examples 1 to 3 and comparative examples 1 to 2 of the present invention, and the following parameters were detected for 100 packaged lamp beads with a remote integrating sphere tester, with specific results shown in table 1:
1. luminous flux 2, radiation power 3, chromaticity diagram x-axis coordinate 4 and chromaticity diagram y-axis coordinate
5. Dominant wavelength 6, peak wavelength 7, half wave width
The more uniform the distribution of the chromaticity diagram x-axis coordinate and the chromaticity diagram y-axis coordinate in the above parameters is, the closer the light which can be sensed by human eyes is, namely the smaller the chromatic aberration is; the peak wavelength and the half-wave width are basically unchanged, and the waveform of the UV section is not obviously changed.
Min in table 1 represents the minimum value of each parameter of 100 encapsulated beads, max represents the maximum value of each parameter of 100 encapsulated beads, and avg represents the average value of each parameter of 100 encapsulated beads.
TABLE 1
Example 2 compared with example 1, the position of the second multiple quantum well structure is adjusted, the growth temperature of the well layer of the second multiple quantum well unit is reduced, the flow rate of the TMIn is increased, and as can be seen from the data in table 1, the peak wavelength of example 2 is substantially consistent with that of example 1, the luminous flux and the dominant wavelength of example 2 are higher than that of example 1, and the radiation power is lower than that of example 1; example 3 the number of second multiple quantum well units was reduced to 1 compared to example 2, and it can be seen from the data in table 1 that the peak wavelength and the dominant wavelength of examples 3 and 2 are substantially identical, the luminous flux of example 3 is lower than that of example 2, and the radiant power is higher than that of example 2. Therefore, it is concluded from the above results that the dominant wavelength of the UV LED can be adjusted and controlled by adjusting the growth temperature, the growth number, and the flow rate of TMIn introduced into the well layer of the second multiple quantum well unit, so that the UV LED has an excellent dimming effect.
Comparative example 1 the number of second multiple quantum well units was increased to 3 as compared to examples 1 and 2, and it can be seen from the data of table 1 that the peak wavelength and the dominant wavelength of comparative example 1 are substantially identical to those of examples 1 and 2, and the luminous flux of comparative example 1 is significantly higher than those of examples 1 and 2, but the radiation power thereof is significantly lower than those of examples 1 and 2, the optical properties are drastically deteriorated, and it is difficult to satisfy the market demand.
Comparative example 2 is a UV LED without the second multiple quantum well structure, which has a scattered dominant wavelength distribution, a large chromatic aberration, and a non-uniform light color, and cannot achieve the effect of UV dimming.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (9)
1. A preparation method of a UV LED is characterized by comprising the following steps:
1) introducing a gallium source, an aluminum source and a nitrogen source into the reaction chamber, and growing a first multiple quantum well unit barrier layer at the temperature of 900-;
then, controlling the flow of the introduced gallium source to be 50-200sccm, the flow of the indium source to be 60-170sccm and the flow of the nitrogen source to be 5-80sl, and growing a first multi-quantum well unit potential well layer on the first multi-quantum well unit barrier layer at the temperature of 810-;
repeating the step 1) for T times to obtain T first multiple quantum well units;
2) introducing a gallium source, an aluminum source and a nitrogen source into the reaction chamber, and growing a second multi-quantum well unit barrier layer on the Tth first multi-quantum well unit at the temperature of 900-;
then, controlling the flow of the introduced gallium source to be 50-200sccm, the flow of the indium source to be 180-500sccm and the flow of the nitrogen source to be 5-80sl, and growing a second multi-quantum well unit potential well layer on the second multi-quantum well unit barrier layer at the temperature of 700-800 ℃;
repeating the step 2) M times to obtain M second multiple quantum well units;
3) repeating the step 1) for P times to obtain P first multiple quantum well units; wherein P + T ═ N;
wherein M is 1 or 2;
or,
1) introducing a gallium source, an aluminum source and a nitrogen source into the reaction chamber, and growing a second multi-quantum well unit barrier layer at the temperature of 900-;
then, controlling the flow of the introduced gallium source to be 50-200sccm, the flow of the indium source to be 180-;
repeating the step M times to obtain M second multiple quantum well units;
2) introducing a gallium source, an aluminum source and a nitrogen source into the reaction chamber, and growing a first multi-quantum well unit barrier layer on the Mth second multi-quantum well unit at the temperature of 900-;
then, controlling the flow of the introduced gallium source to be 50-200sccm, the flow of the indium source to be 60-170sccm and the flow of the nitrogen source to be 5-80sl, and growing a first multi-quantum well unit potential well layer on the first multi-quantum well unit barrier layer at the temperature of 810-;
repeating the step N times to obtain N first multiple quantum well units;
wherein M is 1 or 2;
at least 3 first multiple quantum well units are grown above the surface of the second multiple quantum well unit far away from the substrate.
2. The method of claim 1, wherein N is an integer from 3 to 15.
3. The method of claim 1, wherein the reaction chamber is a MOCVD reaction chamber.
4. The method of claim 1 or 3, wherein the pressure in the reaction chamber is 50 to 500 Torr.
5. The method of claim 1, wherein the first multi-quantum-well cell barrier layer or the second multi-quantum-well cell barrier layer is grown to a thickness of 5-20 nm.
6. The method of claim 1, wherein the growth thickness of the first multi-quantum well unit well layer or the second multi-quantum well unit well layer is 1-5 nm.
7. The method of claim 1, wherein the gallium source is selected from one of trimethyl gallium or triethyl gallium.
8. The method of claim 1 wherein the indium source is trimethyl indium.
9. A UV LED obtained by the production method according to any one of claims 1 to 8.
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