CN112103375B - Epitaxial growth method suitable for ultraviolet LED - Google Patents
Epitaxial growth method suitable for ultraviolet LED Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 230000000903 blocking effect Effects 0.000 claims abstract description 17
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 16
- 230000004888 barrier function Effects 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000001816 cooling Methods 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims description 19
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 230000001788 irregular Effects 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 123
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 29
- 239000011777 magnesium Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 11
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 11
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
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- 230000005699 Stark effect Effects 0.000 description 2
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- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 239000013256 coordination polymer Substances 0.000 description 1
- UOSXPFXWANTMIZ-UHFFFAOYSA-N cyclopenta-1,3-diene;magnesium Chemical group [Mg].C1C=CC=C1.C1C=CC=C1 UOSXPFXWANTMIZ-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The application discloses an epitaxial production method suitable for ultraviolet LED, includes in proper order: treating a substrate, growing a low-temperature GaN buffer layer, growing an undoped GaN layer, growing an Si-doped N-type GaN layer, growing a multi-quantum well light-emitting layer, growing an AlGaN electron blocking layer, growing an Mg-doped P-type GaN layer, and cooling, wherein the multi-quantum well light-emitting layer sequentially comprises the grown InGaN well layer and the grown SiN layer x Layer, growth of In y N 1‑y And growing an In linear graded InAlGaN layer and a GaN barrier layer. The method solves the problem of lower luminous efficiency of the LED in the conventional LED epitaxial growth, so as to meet the application requirement of an ultraviolet LED, and simultaneously reduces the working voltage and enhances the antistatic capability.
Description
Technical Field
The invention belongs to the technical field of LEDs, and particularly relates to an epitaxial growth method suitable for an ultraviolet LED.
Background
A Light-Emitting Diode (LED) is a semiconductor electronic device that converts electrical energy into Light energy. The LED is used as a novel efficient, environment-friendly and green solid-state lighting source and has been widely applied to traffic signal lamps, automobile lamps, indoor and outdoor lighting and display screens.
Ultraviolet LED technology has been rapidly developed in recent years, and is increasingly widely used in life and production of people, and is also attracting more attention, and is the subject of controversial research.
The ultraviolet spectrum range is approximately 100 nm-400 nm, and the ultraviolet light has different application fields for ultraviolet light with different wavelength ranges. The earliest ultraviolet LED has poor wavelength monochromaticity, narrow application range and most common use for distinguishing false. However, with improvements in production cost, reliability, performance and the like, ultraviolet LEDs are now being used in more and more fields. In the field of illumination, the display index is greatly improved by utilizing the RGB fluorescent powder excited by the ultraviolet LED, so that the LED light source is the development direction of next-generation white light illumination. In addition, ultraviolet LEDs have also been involved in various fields other than illumination. Including pseudo-discrimination (375-395 nm), sterilization (390-410 nm), medical treatment (300-320 nm), biological medicine (270-300 nm), high molecular printing (300-365 nm), bar code verification (230-280 nm), body fluid detection discrimination and analysis (250-405 nm), water logging sterilization (230-400 nm), optical sensors and other instruments (230-400 nm).
The most important factor currently affecting the development of the violet LED is its luminous efficiency. Compared with blue LEDs, ultraviolet LEDs have low luminous efficiency, and if the luminous efficiency can be improved, the ultraviolet LEDs can meet with larger development space.
Therefore, the epitaxial growth method suitable for the ultraviolet LED solves the problem that the luminous efficiency of the LED is low in the existing LED epitaxial growth, so that the application requirement of the ultraviolet LED is met, and the technical problem to be solved in the technical field is urgent.
Disclosure of Invention
The invention solves the problem of lower LED luminous efficiency in the existing LED epitaxial growth by adopting a novel multi-quantum well luminous layer growth method, reduces the working voltage and enhances the antistatic capability.
The epitaxial growth method suitable for the ultraviolet LED sequentially comprises the following steps of: treating a substrate, growing a low-temperature GaN buffer layer, growing an undoped GaN layer, growing an Si-doped N-type GaN layer, growing a multi-quantum well light-emitting layer, growing an AlGaN electron blocking layer, growing an Mg-doped P-type GaN layer, and cooling; the growing multi-quantum well light-emitting layer sequentially comprises: growth of InGaN well layer, growth of SiN x Layer, growth of In y N 1-y The method comprises the steps of layer growth, in linear graded InAlGaN layer growth and GaN barrier layer growth, and specifically comprises the following steps:
A. control of reaction chamber pressure 280-350mbar, controlling the temperature of the reaction cavity to be 800-850 ℃, and introducing NH with the flow rate of 50000-70000sccm 3 20-40sccm TMGa, 10000-15000sccm TMIn, and growing an InGaN well layer with a thickness of 3 nm;
B. keeping the temperature and pressure of the reaction cavity unchanged, stopping introducing TMGa and TMIn, and introducing SiH with the flow of 0.1-0.3 mu mol/min into the reaction cavity while keeping the flow of ammonia gas unchanged 4 Growing SiN with thickness of 5-10nm x A layer, wherein x ranges from 0.08 to 0.15;
C. the SiH is stopped by controlling the temperature and the pressure of the reaction cavity to be unchanged 4 Introducing 200-280sccm TMGa and 700-800sccm TMIn, and growing 3-7nm In y Ga 1-y A layer, wherein y ranges from 0.1 to 0.15;
D. keeping the pressure of the reaction chamber unchanged, raising the temperature of the reaction chamber to 900-950 ℃, continuously introducing 200-280sccm TMGa and 700-800sccm TMIn, and simultaneously introducing 1200-1500sccm TMAL and 180-200L/min NH 3 Growing an In linear gradient InAlGaN layer with the thickness of 10-15nm, and controlling the doping concentration of In from 1E21atom/cm In the growing process 3 The linear gradient increased to 1E22atom/cm 3 And the control relation of the In doping concentration satisfies the following formula: q=9×10 19 t+10 21 Wherein Q represents the doping concentration of In, and t represents the growth time;
E. maintaining the pressure of the reaction cavity unchanged, reducing the temperature of the reaction cavity to 700-750 ℃, and introducing NH with the flow rate of 30000-40000sccm 3 TMGa 20-60sccm and N100-130L/min 2 Growing a GaN barrier layer of 10 nm;
repeating the steps A-E, periodically and sequentially growing InGaN well layers and SiN x Layer, growth of In y N 1-y The method comprises the steps of layer growth, in linear gradient InAlGaN layer growth, gaN barrier layer growth, and cycle number of 3-10.
Preferably, the specific process of processing the substrate is as follows:
introducing 100-130L/min H at 1000-1100deg.C 2 The pressure of the reaction cavity is kept at 100-300mbar, and the sapphire substrate is processed for 5-10min.
Preferably, the specific process of growing the low-temperature GaN buffer layer is as follows:
cooling to 500-600deg.C, maintaining reaction chamber pressure at 300-600mbar, and introducing NH with flow rate of 10000-20000sccm 3 TMGa 50-100sccm and H100-130L/min 2 Growing a low-temperature GaN buffer layer with the thickness of 20-40nm on a sapphire substrate;
raising the temperature to 1000-1100 ℃, keeping the pressure of the reaction cavity at 300-600mbar, and introducing NH with the flow rate of 30000-40000sccm 3 H of 100-130L/min 2 Preserving the temperature for 300-500s, and corroding the low-temperature GaN buffer layer into an irregular island shape.
Preferably, the specific process of growing the undoped GaN layer is as follows:
raising the temperature to 1000-1200 ℃, keeping the pressure of the reaction cavity at 300-600mbar, and introducing NH with the flow rate of 30000-40000sccm 3 TMGa 200-400sccm and H100-130L/min 2 And continuously growing an undoped GaN layer with the thickness of 2-4 mu m.
Preferably, the specific process of growing the Si-doped N-type GaN layer is as follows:
maintaining the pressure of the reaction cavity at 300-600mbar, maintaining the temperature at 1000-1200deg.C, and introducing NH with flow rate of 30000-60000sccm 3 200-400sccm TMGa, 100-130L/min H 2 SiH of 20-50sccm 4 Continuously growing an N-type GaN layer doped with Si with the thickness of 3-4 mu m, wherein the doping concentration of Si is 5E18-1E19atoms/cm 3 。
Preferably, the specific process of growing the AlGaN electron blocking layer is as follows:
introducing NH of 50000-70000sccm at 900-950 deg.C and reaction chamber pressure of 200-400mbar 3 30-60sccm TMGa, 100-130L/min H 2 100-130sccm TMAL, 1000-1300sccm Cp 2 Growing the AlGaN electron blocking layer under the condition of Mg, wherein the thickness of the AlGaN electron blocking layer is 40-60nm, and the doping concentration of Mg is 1E19-1E20atoms/cm 3 。
Preferably, the specific process of growing the P-type GaN layer doped with Mg is as follows:
maintaining the pressure of the reaction cavity at 400-900mbar and the temperature at 950-1000 ℃, and introducing NH with the flow rate of 50000-70000sccm 3 、20-100sccm TMGa, H of 100-130L/min 2 Cp of 1000-3000sccm 2 Mg, continuously growing a 50-200nm doped P-type GaN layer, wherein the doping concentration of Mg is 1E19-1E20atoms/cm 3 。
Preferably, the specific process of cooling is as follows:
cooling to 650-680 deg.C, maintaining the temperature for 20-30min, closing the heating system, closing the gas supply system, and cooling with furnace.
Compared with the traditional growth method, the epitaxial growth method suitable for the ultraviolet LED achieves the following effects:
in the growth method of the multi-quantum well luminescent layer of the invention, siN is inserted into the InGaN well layer and the GaN barrier layer x The layer can reduce dislocation density and improve the growth quality of the material by promoting the lateral epitaxial growth of the material on one hand; on the other hand, siN x The layer can adjust the anisotropism in the material growth process and improve the material growth quality. Grown In y Ga 1-y The layers enable distribution central axes of holes and electrons in the multiple quantum wells to overlap, and efficiency of electron-to-hole transition is improved, so that luminous efficiency of the LED chip is improved. The In linear gradual change InAlGaN layer is grown, so that the polarization effect caused by lattice mismatch can be effectively relieved, the stress In the material is reduced, and the energy band structure of the quantum well is optimized. The obtained gentle energy band can relieve the separation of electron and hole wave functions caused by the quantum Stark effect, thereby improving the radiation recombination efficiency and the luminous efficiency of the device.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and do not constitute a limitation on the invention. In the drawings:
FIG. 1 is a schematic diagram of an LED epitaxy structure prepared by the method of the present invention;
fig. 2 is a schematic structural diagram of an LED epitaxy prepared by a conventional method;
wherein, 1, a sapphire substrate, 2, a low temperature GaN buffer layer, 3, an undoped GaN layer, 4, an N-type GaN layer, 5, moreQuantum well light-emitting layer, 6, alGaN electron blocking layer, 7, P-type GaN layer, 51, inGaN well layer, 52, siN x Layer, 53, in y N 1-y Layers, 54, in linear graded InAlGaN layer, 55, gaN barrier layer.
Detailed Description
Certain terms are used throughout the description and claims to refer to particular components. Those of skill in the art will appreciate that a hardware manufacturer may refer to the same component by different names. The description and claims do not take the form of an element differentiated by name, but rather by functionality. As used throughout the specification and claims, the word "comprise" is an open-ended term, and thus should be interpreted to mean "include, but not limited to. By "substantially" is meant that within an acceptable error range, a person skilled in the art is able to solve the technical problem within a certain error range, substantially achieving the technical effect. The description hereinafter sets forth the preferred embodiment for carrying out the present application, but is not intended to limit the scope of the present application in general, for the purpose of illustrating the general principles of the present application. The scope of the present application is defined by the appended claims.
In addition, the present specification does not limit the components and method steps disclosed in the claims to the components and method steps of the embodiments. In particular, the dimensions, materials, shapes, the structural order, the adjacent order, the manufacturing method, and the like of the structural members described in the embodiments are merely illustrative examples without limiting the scope of the present invention. The size and positional relationship of the structural components shown in the drawings are exaggerated for clarity of illustration.
The present application is described in further detail below with reference to the drawings, but is not intended to be limiting.
Example 1
The embodiment adopts the epitaxial production method suitable for ultraviolet LEDs, adopts MOCVD to grow GaN-based LED epitaxial wafers, and adopts high-purity H 2 Or high purity N 2 Or high purity H 2 And high purityN 2 High purity NH using the mixed gas of (2) as carrier gas 3 As N source, trimethyl gallium (TMGa) as gallium source, trimethyl indium (TMIn) as indium source, and Silane (SiH) as N-type dopant 4 ) Trimethylaluminum (TMAL) as aluminum source, the P-type dopant is magnesium dicyclopentadiene (CP) 2 Mg) at a reaction pressure of between 70mbar and 900 mbar. The specific growth mode is as follows (see fig. 1 for epitaxial structure):
the epitaxial production method suitable for the ultraviolet LED sequentially comprises the following steps of: treating a sapphire substrate 1, growing a low-temperature GaN buffer layer 2, growing an undoped GaN layer 3, growing an Si-doped N-type GaN layer 4, growing a multi-quantum well luminescent layer 5, growing an AlGaN electron blocking layer 6, growing an Mg-doped P-type GaN layer 7, and cooling; wherein, the liquid crystal display device comprises a liquid crystal display device,
step 1: the sapphire substrate 1 is processed.
Specifically, the step 1 is further that:
at 1000-1100 deg.C, the pressure of reaction cavity is 100-300mbar, H is introduced into the reaction cavity at 100-130L/min 2 The sapphire substrate is processed for 5 to 10 minutes.
Step 2: and growing a low-temperature GaN buffer layer 2, and forming irregular islands on the low-temperature GaN buffer layer 2.
Specifically, the step 2 is further that:
introducing 10000-20000sccm NH at 500-600deg.C and reaction chamber pressure of 300-600mbar 3 50-100sccm TMGa, 100-130L/min H 2 Growing the low-temperature GaN buffer layer 2 on the sapphire substrate, wherein the thickness of the low-temperature GaN buffer layer 2 is 20-40nm;
introducing NH of 30000-40000sccm at 1000-1100deg.C and reaction chamber pressure of 300-600mbar 3 H of 100-130L/min 2 The temperature is kept for 300-500s, and the irregular island is formed on the low-temperature GaN buffer layer 2.
Step 3: the undoped GaN layer 3 is grown.
Specifically, the step 3 is further:
at a temperature of 1000-1200deg.C and a reaction chamber pressure of 300-600mbar, 30000-400 is introducedNH of 00sccm 3 200-400sccm TMGa, 100-130L/min H 2 Growing the undoped GaN layer 3; the undoped GaN layer 3 has a thickness of 2-4 μm.
Step 4: a Si doped N-type GaN layer 4 is grown.
Specifically, the step 4 is further:
maintaining the pressure of the reaction cavity at 300-600mbar, maintaining the temperature at 1000-1200deg.C, and introducing NH with flow rate of 30000-60000sccm 3 200-400sccm TMGa, 100-130L/min H 2 SiH of 20-50sccm 4 Continuously growing an N-type GaN layer 4 doped with Si with the thickness of 3-4 mu m, wherein the doping concentration of Si is 5E18-1E19atoms/cm 3 。
Step 5: a multiple quantum well light emitting layer 5 is grown.
The growing multi-quantum well light-emitting layer 5 further comprises:
A. controlling the pressure of the reaction cavity to be 280-350mbar, controlling the temperature of the reaction cavity to be 800-850 ℃, and introducing NH with the flow rate of 50000-70000sccm 3 20-40sccm TMGa, 10000-15000sccm TMIn, and growing an InGaN well layer 51 having a thickness of 3 nm;
B. keeping the temperature and pressure of the reaction cavity unchanged, stopping introducing TMGa and TMIn, and introducing SiH with the flow of 0.1-0.3 mu mol/min into the reaction cavity while keeping the flow of ammonia gas unchanged 4 Growing SiN with thickness of 5-10nm x Layer 52, wherein x ranges from 0.08 to 0.15;
C. the SiH is stopped by controlling the temperature and the pressure of the reaction cavity to be unchanged 4 Introducing 200-280sccm TMGa and 700-800sccm TMIn, and growing 3-7nm In y Ga 1-y Layer 53, wherein y ranges from 0.1 to 0.15;
D. keeping the pressure of the reaction chamber unchanged, raising the temperature of the reaction chamber to 900-950 ℃, continuously introducing 200-280sccm TMGa and 700-800sccm TMIn, and simultaneously introducing 1200-1500sccm TMAL and 180-200L/min NH 3 An In linear gradient InAlGaN layer 54 with the thickness of 10-15nm is grown, and the doping concentration of In is controlled to be 1E21atom/cm during the growth process 3 The linear gradient increased to 1E22atom/cm 3 And the control relation of the In doping concentration satisfies the following formula: q=9×10 19 t+10 21 Wherein Q represents the doping concentration of In, and t represents the growth time;
E. maintaining the pressure of the reaction cavity unchanged, reducing the temperature of the reaction cavity to 700-750 ℃, and introducing NH with the flow rate of 30000-40000sccm 3 TMGa 20-60sccm and N100-130L/min 2 Growing a GaN barrier layer 55 of 10 nm;
repeating the steps A-E, periodically and sequentially growing InGaN well layer 51 and SiN x Layer 52, growth In y N 1-y Layer 53, grown In linear graded InAlGaN layer 54, grown GaN barrier layer 55, and number of cycles of 3-10.
Step 6: growing an AlGaN electron blocking layer 6;
specifically, the step 6 is further:
introducing NH of 50000-70000sccm at 900-950 deg.C and reaction chamber pressure of 200-400mbar 3 30-60sccm TMGa, 100-130L/min H 2 100-130sccm TMAL, 1000-1300sccm Cp 2 Growing the AlGaN electron blocking layer 6 under the condition of Mg, wherein the thickness of the AlGaN electron blocking layer 6 is 40-60nm, and the doping concentration of Mg is 1E19-1E20atoms/cm 3 。
Step 7: a Mg doped P-type GaN layer 7 is grown.
Specifically, the step 7 is further:
introducing NH of 50000-70000sccm at 950-1000deg.C and reaction chamber pressure of 400-900mbar 3 TMGa 20-100sccm, H100-130L/min 2 Cp of 1000-3000sccm 2 Under the condition of Mg, growing a P-type GaN layer 7 doped with Mg with the thickness of 50-200nm and the doping concentration of Mg of 1E19-1E20atoms/cm 3 。
Step 8: preserving heat at 650-680 deg.C for 20-30min, closing heating system, closing gas supply system, and cooling with furnace.
Example 2
Comparative examples, i.e., existing conventional LED epitaxial growth methods, are provided below.
Step 1: at 1000-1100 deg.C, the pressure of reaction cavity is 100-300mbar, H is introduced into the reaction cavity at 100-130L/min 2 The sapphire substrate is processed for 5 to 10 minutes.
Step 2: and growing a low-temperature GaN buffer layer 2, and forming irregular islands on the low-temperature GaN buffer layer 2.
Specifically, the step 2 is further that:
introducing 10000-20000sccm NH at 500-600deg.C and reaction chamber pressure of 300-600mbar 3 50-100sccm TMGa, 100-130L/min H 2 Growing the low-temperature GaN buffer layer 2 on the sapphire substrate, wherein the thickness of the low-temperature GaN buffer layer 2 is 20-40nm;
introducing NH of 30000-40000sccm at 1000-1100deg.C and reaction chamber pressure of 300-600mbar 3 H of 100L/min-130L/min 2 The temperature is kept for 300-500s, and the irregular island is formed on the low-temperature GaN buffer layer 2.
Step 3: the undoped GaN layer 3 is grown.
Specifically, the step 3 is further:
introducing NH of 30000-40000sccm at 1000-1200deg.C and reaction chamber pressure of 300-600mbar 3 200-400sccm TMGa, 100-130L/min H 2 Growing the undoped GaN layer 3; the undoped GaN layer 3 has a thickness of 2-4 μm.
Step 4: a Si doped N-type GaN layer 4 is grown.
Specifically, the step 4 is further:
introducing NH of 30000-60000sccm at 1000-1200deg.C and reaction chamber pressure of 300-600mbar 3 200-400sccm TMGa, 100-130L/min H 2 SiH of 20-50sccm 4 The Si doped N-type GaN layer 4 is grown, the thickness of the N-type GaN layer 4 is 3-4 mu m, and the Si doping concentration is 5E18-1E19atoms/cm 3 。
Step 5: an InGaN/GaN multiple quantum well light emitting layer 5 is grown.
Specifically, the growing the multiple quantum well light emitting layer further comprises:
maintaining the pressure of the reaction cavity at 300-400mbar and the temperature at 720 ℃, and introducingNH with flow rate of 50000-70000sccm 3 20-40sccm TMGa, 10000-15000sccm TMIn, and growing an InGaN well layer 51 doped with In and having a thickness of 3 nm;
raising the temperature to 800 ℃, keeping the pressure of the reaction cavity at 300-400mbar, and introducing NH with the flow rate of 50000-70000sccm 3 TMGa 20-100sccm and N100-130L/min 2 Growing a GaN barrier layer 55 of 10 nm;
and repeatedly and alternately growing the InGaN well layer 51 and the GaN barrier layer 55 to obtain the InGaN/GaN multi-quantum well light-emitting layer, wherein the number of the alternately growing periods of the InGaN well layer 51 and the GaN barrier layer 55 is 7-13.
Step 6: an AlGaN electron blocking layer 6 is grown.
Specifically, the step 6 is further:
introducing NH of 50000-70000sccm at 900-950 deg.C and reaction chamber pressure of 200-400mbar 3 30-60sccm TMGa, 100-130L/min H 2 100-130sccm TMAL, 1000-1300sccm Cp 2 Growing the AlGaN electron blocking layer 6 under the condition of Mg, wherein the thickness of the AlGaN electron blocking layer 6 is 40-60nm, and the doping concentration of Mg is 1E19-1E20atoms/cm 3 。
Step 7: a Mg doped P-type GaN layer 7 is grown.
Specifically, the step 7 is further:
introducing NH of 50000-70000sccm at 950-1000deg.C and reaction chamber pressure of 400-900mbar 3 TMGa 20-100sccm, H100-130L/min 2 Cp of 1000-3000sccm 2 Under the condition of Mg, growing a P-type GaN layer 7 doped with Mg with the thickness of 50-200nm and the doping concentration of Mg of 1E19-1E20atoms/cm 3 。
Step 8: preserving heat at 650-680 deg.C for 20-30min, closing heating system, closing gas supply system, and cooling with furnace.
Sample 1 and sample 2 were prepared according to the above examples 1 and 2, respectively, and sample 1 and sample 2 were coated with an ITO layer of about 150nm under the same pre-process conditions, with Cr/Pt/Au electrodes of about 1500nm under the same conditions, and with a protective layer of SiO under the same conditions 2 About 100nm, then in the same stripeSamples were ground and cut under the piece into 635 μm (25 mil) chip particles, after which samples 1 and 2 were each picked 100 dies in the same location and packaged under the same packaging process into white LEDs. The photoelectric properties of sample 1 and sample 2 were tested using an integrating sphere under a drive current of 350 mA.
Table 1 results of comparing electrical parameters of samples 1 and 2
As can be seen from Table 1, the LED (sample 1) prepared by the epitaxial growth method of the invention has significantly improved luminous efficiency, lower working voltage and stronger antistatic capability, because the technical scheme of the patent introduces grown SiN in the quantum well layer x Layer, growth of In y N 1-y And (3) layer and growing an In linear graded InAlGaN layer.
The epitaxial growth method suitable for the ultraviolet LED achieves the following effects:
in the growth method of the multi-quantum well luminescent layer of the invention, siN is inserted into the InGaN well layer and the GaN barrier layer x The layer can reduce dislocation density and improve the growth quality of the material by promoting the lateral epitaxial growth of the material on one hand; on the other hand, siN x The layer can adjust the anisotropism in the material growth process and improve the material growth quality. Grown In y Ga 1-y The layers enable distribution central axes of holes and electrons in the multiple quantum wells to overlap, and efficiency of electron-to-hole transition is improved, so that luminous efficiency of the LED chip is improved. The In linear gradual change InAlGaN layer is grown, so that the polarization effect caused by lattice mismatch can be effectively relieved, the stress In the material is reduced, and the energy band structure of the quantum well is optimized. The obtained gentle energy band can relieve the separation of electron and hole wave functions caused by the quantum Stark effect, thereby improving the radiation recombination efficiency and the luminous efficiency of the device.
Since the method section has been described in detail in the embodiments of the present application, the description of the structures and the corresponding parts of the methods related in the embodiments is omitted, and is not repeated here. Reference is made to the description of the method embodiments for specific details of construction and are not specifically defined herein.
While the foregoing description illustrates and describes the preferred embodiments of the present application, it is to be understood that this application is not limited to the forms disclosed herein, but is not to be construed as an exclusive use of other embodiments, and is capable of many other combinations, modifications and environments, and adaptations within the scope of the teachings described herein, through the foregoing teachings or through the knowledge or skills of the relevant art. And that modifications and variations which do not depart from the spirit and scope of the present invention are intended to be within the scope of the appended claims.
Claims (8)
1. The epitaxial production method suitable for the ultraviolet LED is characterized by comprising the following steps of: treating a substrate, growing a low-temperature GaN buffer layer, growing an undoped GaN layer, growing an Si-doped N-type GaN layer, growing a multi-quantum well light-emitting layer, growing an AlGaN electron blocking layer, growing an Mg-doped P-type GaN layer, and cooling; the growing multi-quantum well light-emitting layer sequentially comprises: growth of InGaN well layer, growth of SiN x Layer, growth of In y N 1-y The method comprises the steps of layer growth, in linear graded InAlGaN layer growth and GaN barrier layer growth, and specifically comprises the following steps:
A. controlling the pressure of the reaction cavity to be 280-350mbar, controlling the temperature of the reaction cavity to be 800-850 ℃, and introducing NH with the flow rate of 50000-70000sccm 3 20-40sccm TMGa, 10000-15000sccm TMIn, and growing an InGaN well layer with a thickness of 3 nm;
B. keeping the temperature and pressure of the reaction cavity unchanged, stopping introducing TMGa and TMIn, and introducing SiH with the flow of 0.1-0.3 mu mol/min into the reaction cavity while keeping the flow of ammonia gas unchanged 4 Growing SiN with thickness of 5-10nm x A layer, wherein x ranges from 0.08 to 0.15;
C. the SiH is stopped by controlling the temperature and the pressure of the reaction cavity to be unchanged 4 Introducing 200-280sccm TMGa and 700-800sccm TMIn, and growing 3-7nm In y Ga 1-y A layer, wherein y ranges from 0.1 to 0.15;
D. keeping the pressure of the reaction chamber unchanged, raising the temperature of the reaction chamber to 900-950 ℃, continuously introducing 200-280sccm TMGa and 700-800sccm TMIn, and simultaneously introducing 1200-1500sccm TMAL and 180-200L/min NH 3 Growing an In linear gradient InAlGaN layer with the thickness of 10-15nm, and controlling the doping concentration of In from 1E21atom/cm In the growing process 3 The linear gradient increased to 1E22atom/cm 3 And the control relation of the In doping concentration satisfies the following formula: q=9×10 19 t+10 21 Wherein Q represents the doping concentration of In, and t represents the growth time;
E. maintaining the pressure of the reaction cavity unchanged, reducing the temperature of the reaction cavity to 700-750 ℃, and introducing NH with the flow rate of 30000-40000sccm 3 TMGa 20-60sccm and N100-130L/min 2 Growing a GaN barrier layer of 10 nm;
repeating the steps A-E, periodically and sequentially growing InGaN well layers and SiN x Layer, growth of In y N 1-y The method comprises the steps of layer growth, in linear gradient InAlGaN layer growth, gaN barrier layer growth, and cycle number of 3-10.
2. The method for epitaxial production of ultraviolet LED according to claim 1, wherein H of 100-130L/min is introduced at 1000-1100deg.C 2 The pressure of the reaction cavity is kept at 100-300mbar, and the sapphire substrate is processed for 5-10min.
3. The epitaxial production method for ultraviolet LEDs according to claim 2, wherein the specific process of growing the low temperature GaN buffer layer is:
cooling to 500-600deg.C, maintaining reaction chamber pressure at 300-600mbar, and introducing NH with flow rate of 10000-20000sccm 3 TMGa 50-100sccm and H100-130L/min 2 Growing a low-temperature GaN buffer layer with the thickness of 20-40nm on a sapphire substrate;
raising the temperature to 1000-1100 ℃, keeping the pressure of the reaction cavity at 300-600mbar, and introducing NH with the flow rate of 30000-40000sccm 3 H of 100-130L/min 2 Preserving the temperature for 300-500s, and corroding the low-temperature GaN buffer layerEtching into irregular island shape.
4. The method for epitaxial production of uv LED according to claim 1, wherein the specific process of growing undoped GaN layer is:
raising the temperature to 1000-1200 ℃, keeping the pressure of the reaction cavity at 300-600mbar, and introducing NH with the flow rate of 30000-40000sccm 3 TMGa 200-400sccm and H100-130L/min 2 And continuously growing an undoped GaN layer with the thickness of 2-4 mu m.
5. The epitaxial production method for ultraviolet LEDs according to claim 1, wherein the specific process of growing the Si doped N-type GaN layer is:
maintaining the pressure of the reaction cavity at 300-600mbar, maintaining the temperature at 1000-1200deg.C, and introducing NH with flow rate of 30000-60000sccm 3 200-400sccm TMGa, 100-130L/min H 2 SiH of 20-50sccm 4 Continuously growing an N-type GaN layer doped with Si with the thickness of 3-4 mu m, wherein the doping concentration of Si is 5E18-1E19atoms/cm 3 。
6. The epitaxial production method for ultraviolet LEDs according to claim 1, wherein the specific process of growing AlGaN electron blocking layer is:
introducing NH of 50000-70000sccm at 900-950 deg.C and reaction chamber pressure of 200-400mbar 3 30-60sccm TMGa, 100-130L/min H 2 100-130sccm TMAL, 1000-1300sccm Cp 2 Growing the AlGaN electron blocking layer under the condition of Mg, wherein the thickness of the AlGaN electron blocking layer is 40-60nm, and the doping concentration of Mg is 1E19-1E20atoms/cm 3 。
7. The epitaxial production method for ultraviolet LEDs according to claim 1, wherein the specific process of growing the Mg doped P-type GaN layer is:
maintaining the pressure of the reaction cavity at 400-900mbar and the temperature at 950-1000 ℃, and introducing NH with the flow rate of 50000-70000sccm 3 20-100sccmTMGa, H of 100-130L/min 2 Cp of 1000-3000sccm 2 Mg, continuously growing a 50-200nm doped P-type GaN layer, wherein the doping concentration of Mg is 1E19-1E20atoms/cm 3 。
8. The epitaxial production method suitable for ultraviolet LEDs according to claim 1, wherein the specific process of cooling is:
cooling to 650-680 deg.C, maintaining the temperature for 20-30min, closing the heating system, closing the gas supply system, and cooling with furnace.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000114598A (en) * | 1998-10-06 | 2000-04-21 | Toshiba Corp | Semiconductor light emitting element |
| WO2008022553A1 (en) * | 2006-08-15 | 2008-02-28 | Institute Of Physics, Chinese Academy Of Sciences | Epitaxial material used for gan based led with low polarization effect and manufacturing method thereof |
| CN103730557A (en) * | 2014-01-03 | 2014-04-16 | 合肥彩虹蓝光科技有限公司 | Light-emitting diode with novel P-type electron barrier layer structure and growth method |
| CN111223764A (en) * | 2020-03-18 | 2020-06-02 | 湘能华磊光电股份有限公司 | LED epitaxial growth method for improving radiation recombination efficiency |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100507610B1 (en) * | 2002-11-15 | 2005-08-10 | 광주과학기술원 | Nitride semiconductor nanophase opto-electronic cell and the preparation method thereof |
-
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000114598A (en) * | 1998-10-06 | 2000-04-21 | Toshiba Corp | Semiconductor light emitting element |
| WO2008022553A1 (en) * | 2006-08-15 | 2008-02-28 | Institute Of Physics, Chinese Academy Of Sciences | Epitaxial material used for gan based led with low polarization effect and manufacturing method thereof |
| CN103730557A (en) * | 2014-01-03 | 2014-04-16 | 合肥彩虹蓝光科技有限公司 | Light-emitting diode with novel P-type electron barrier layer structure and growth method |
| CN111223764A (en) * | 2020-03-18 | 2020-06-02 | 湘能华磊光电股份有限公司 | LED epitaxial growth method for improving radiation recombination efficiency |
Non-Patent Citations (1)
| Title |
|---|
| In组分渐变提高InGaN/GaN多量子阱发光二极管发光性能;朱丽虹;蔡加法;李晓莹;邓彪;刘宝林;;物理学报(第07期);全文 * |
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