CN101908588A - Multi-wavelength light-emitting diode and manufacturing method thereof - Google Patents
Multi-wavelength light-emitting diode and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses a multi-wavelength light-emitting diode and a manufacturing method thereof. The multi-wavelength light-emitting diode comprises a substrate and a plurality of quantum well light-emitting units positioned on the substrate, wherein the wavelengths of the light rays emitted by the plurality of the quantum well light-emitting units are different to ensure that the light rays are mixed together to form white light so as to improve the energy conversion efficiency and reduce the manufacturing cost.
Description
Technical field
The present invention relates to semiconductor lighting device technical field, be specifically related to a kind of multi-wave length illuminating diode and manufacture method thereof.
Background technology
Characteristics such as semiconductor light-emitting-diode (LED) is low in energy consumption with it as light source, life-span length, reliability height, many fields have in daily life obtained general approval, are used widely in electronic product, for example display backlight etc.In recent years, be that the short-wave long light-emitting diode of representative has been obtained very much progress on basic research and commercial the application with the GaN based light-emitting diode.Multi-quantum pit structure in the GaN based light-emitting diode of widespread usage as shown in Figure 1 at present, InGaN/GaN multi-quantum pit structure 110 among the figure is formed by GaN barrier layer 113 and InGaN potential well layer 112 multiple-level stacks, be formed with the AlGaN layer 111 that the p type mixes on it, its below is formed with the AlGaN layer 114 that the n type mixes.
One of market of the maximum of semiconductor light-emitting-diode is that traditional bulb is replaced with electricity-saving lamp.But present light-emitting diodes pipe manufacturer concentrates on the light-emitting diode of single wavelength, be converted into white light and must pass through fluorescent material.This mode can reduce energy conversion efficiency when being applied to illumination or luminous application.
Summary of the invention
The object of the present invention is to provide a kind of multi-wave length illuminating diode and manufacture method thereof, can send the light of a plurality of wavelength, become white light after the mixing, thereby improve energy conversion efficiency and reduce manufacturing cost.
A kind of multi-wave length illuminating diode provided by the invention comprises substrate and a plurality of multiple quantum well light emittings unit that is positioned on the described substrate, and wherein, the wavelength of described a plurality of multiple quantum well light emittings unit emitted light becomes white light after different feasible mixing.
Optionally, the quantity of described a plurality of multiple quantum well light emittings unit is more than or equal to 2.
Described multiple quantum well light emitting unit comprises multi-quantum pit structure and is positioned at AlGaN layer, the p of the p type doping of described multi-quantum pit structure top
+The GaN layer that mixes, nesa coating and p type Ohm contact electrode; With
Be positioned at the n of described multi-quantum pit structure below
+GaN layer, GaN resilient coating, n type Ohm contact electrode that the GaN layer that mixes, n type mix.
Optionally, each multi-quantum pit structure comprises N quantum well, and the N in the described N quantum well comprises more than or equal to 1 and smaller or equal to 100 integer.
Optionally, described a plurality of multiple quantum well light emittings unit comprises the first multiple quantum well light emitting unit, the second multiple quantum well light emitting unit and the 3rd multiple quantum well light emitting unit, the optical band gap of the barrier layer material of the described first multiple quantum well light emitting unit is greater than 2eV, and the optical band gap of potential well layer material is less than the 2eV material; The optical band gap of the barrier layer material of the described second multiple quantum well light emitting unit is greater than 2.5eV, and the optical band gap of potential well layer material is less than 2.5eV; The optical band gap of the barrier layer material of described the 3rd multiple quantum well light emitting unit is greater than 3eV, and the optical band gap of potential well layer material is less than 3eV.
Optionally, the barrier layer material of the described first multiple quantum well light emitting unit includes but not limited to GaN, AlGaAs, and the potential well layer material includes but not limited to GaAs, InP;
The barrier layer material of the described second multiple quantum well light emitting unit includes but not limited to GaN, and the potential well layer material includes but not limited to InN, GaP, AlP, AlAs, InGaP;
The barrier layer material of described the 3rd multiple quantum well light emitting unit includes but not limited to GaN, and the potential well layer material includes but not limited to InGaN.
Optionally, described multi-quantum pit structure comprises first multi-quantum pit structure, second multi-quantum pit structure and the 3rd multi-quantum pit structure, described first multi-quantum pit structure is positioned at the top of n type Doped GaN layer, described the 3rd multi-quantum pit structure is positioned at the below of described p type doped with Al GaN layer, and described second multi-quantum pit structure is between the first and the 3rd multi-quantum pit structure.
Optionally, the emission wavelength of described first multi-quantum pit structure is greater than the emission wavelength of described second multi-quantum pit structure, the emission wavelength of described second multi-quantum pit structure is greater than the emission wavelength of described the 3rd multi-quantum pit structure, wherein, the optical band gap of the barrier layer material of described first multi-quantum pit structure is greater than 2eV, and the optical band gap of potential well layer material is less than the 2eV material; The optical band gap of the barrier layer material of described second multi-quantum pit structure is greater than 2.5eV, and the optical band gap of potential well layer material is less than 2.5eV; The optical band gap of the barrier layer material of described the 3rd multi-quantum pit structure is greater than 3eV, and the optical band gap of potential well layer material is less than 3eV.
Optionally, the barrier layer material of described first multi-quantum pit structure includes but not limited to GaN, AlGaAs, and the potential well layer material includes but not limited to GaAs, InP;
The barrier layer material of described second multi-quantum pit structure includes but not limited to GaN, and the potential well layer material includes but not limited to InN, GaP, AlP, AlAs, InGaP;
The barrier layer material of described the 3rd multi-quantum pit structure includes but not limited to GaN, and the potential well layer material includes but not limited to InGaN.
Optionally, has high band gap barrier material layer between described a plurality of multi-quantum pit structure.
Optionally, described high band gap barrier material is AlGaN.
Optionally, described substrate is sapphire, silicon or germanium.
The manufacture method of a kind of multi-wave length illuminating diode provided by the invention comprises:
Substrate is provided,
At described substrate surface deposition GaN resilient coating, n type GaN and n
+GaN;
The deposition of dielectric materials layer;
Utilize mask lithography technology definition multi-quantum pit structure zone, the preparation multi-quantum pit structure;
Remove described dielectric materials layer;
Preparation p type GaN, p
+GaN and contact electrode.
The step of described preparation multi-quantum pit structure comprises the following steps;
Use the first road photomask,, prepare the first wavelength multi-quantum pit structure to define the first wavelength multi-quantum pit structure zone;
Deposition of dielectric materials is used the second road photomask to protect the described first wavelength multi-quantum pit structure, to define the second wavelength multi-quantum pit structure zone, prepares the second wavelength multi-quantum pit structure;
Deposition of dielectric materials is used the 3rd road photomask to protect the described second wavelength multi-quantum pit structure, to define three-wavelength multi-quantum pit structure zone, prepares the three-wavelength multi-quantum pit structure.
Described each wavelength multi-quantum pit structure zone emission light is mixed into white light, light intensity that each is regional and wavelength-tunable.
Optionally, the optical band gap of the barrier layer material of the described first wavelength multi-quantum pit structure is greater than 2eV, and the optical band gap of potential well layer material is less than the 2eV material; The optical band gap of the barrier layer material of the described second wavelength multi-quantum pit structure is greater than 2.5eV, and the optical band gap of potential well layer material is less than 2.5eV; The optical band gap of the barrier layer material of described three-wavelength multi-quantum pit structure is greater than 3eV, and the optical band gap of potential well layer material is less than 3eV.
Optionally, the barrier layer material of the described first wavelength multi-quantum pit structure includes but not limited to GaN, AlGaAs, and the potential well layer material includes but not limited to GaAs, InP;
The barrier layer material of the described second wavelength multi-quantum pit structure includes but not limited to GaN, and the potential well layer material includes but not limited to InN, GaP, AlP, AlAs, InGaP;
The barrier layer material of described three-wavelength multi-quantum pit structure includes but not limited to GaN, and the potential well layer material includes but not limited to InGaN.
Compared with prior art, the present invention has the following advantages:
Multi-wave length illuminating diode of the present invention comprises the luminescence unit of a plurality of multi-quantum pit structures, each multi-quantum pit structure sends the light of different wave length, the light of different wave length becomes white light after mixing, and has higher energy conversion efficiency than the light-emitting diode of single wavelength.
Description of drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing in proportion, focus on illustrating purport of the present invention.
Fig. 1 is the multi-quantum pit structure schematic diagram in the GaN based light-emitting diode;
Fig. 2 a to Fig. 2 c is the schematic diagram of the multi-wave length illuminating diode embodiment according to the present invention;
Fig. 3 to Fig. 5 is the multiple quantum well light emitting cellular construction schematic diagram of the multi-wave length illuminating diode embodiment according to the present invention;
Fig. 6 a to Fig. 6 m is the device profile schematic diagram of explanation multi-wave length illuminating diode manufacture method of the present invention.
Described diagrammatic sketch is illustrative, and nonrestrictive, can not excessively limit protection scope of the present invention at this.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention.Therefore the present invention is not subjected to the restriction of following public specific embodiment.
Fig. 2 a to Fig. 2 c is the schematic diagram of the multi-wave length illuminating diode embodiment according to the present invention.As shown in the figure, multi-wave length illuminating diode of the present invention comprises substrate and a plurality of multiple quantum well light emittings unit 10,20 and 30 that is formed on the substrate, wherein, the wavelength difference of each multiple quantum well light emitting unit emitted light, these light become white light after mixing.Need to prove that the quantity of the multiple quantum well light emitting unit of multi-wave length illuminating diode of the present invention is more than or equal to 2.Present embodiment is that example is described with three multiple quantum well light emitting unit.Can also be a plurality of more than 2 or 3 in other embodiments.Substrate 11 is sapphire, silicon or germanium, and the arrangement mode of multiple quantum well light emitting unit 10,20 and 30 on substrate 11 can be set arbitrarily, and Fig. 2 a to Fig. 2 c has described three kinds of different arrangement modes commonly used, but does not get rid of other arrangement mode.
Each multiple quantum well light emitting unit 10,20 and 30 comprises multi-quantum pit structure again and is formed at AlGaN layer, the p of the p type doping of described multi-quantum pit structure top
+The GaN layer that mixes, nesa coating and p type Ohm contact electrode and the n that is formed at the multi-quantum pit structure below
+GaN layer, GaN resilient coating, n type Ohm contact electrode that the GaN layer that mixes, n type mix.Quantum well structure comprises the barrier layer and the potential well layer of doping or non-doping, and the band gap of potential well layer is less than barrier layer.Multiple Quantum Well is the structure that the potential well layer of the barrier layer of a plurality of non-doping and non-doping alternately is stacked.Fig. 3 to Fig. 5 is the multiple quantum well light emitting unit 10,20 of the multi-wave length illuminating diode embodiment according to the present invention and 30 structural representation.Fig. 3 comprises the situation of single multi-quantum pit structure for the multiple quantum well light emitting unit.As shown in Figure 3, multi-quantum pit structure 200 tops are AlGaN layer 211, p that the p type mixes
+The GaN layer 212 of doping (heavy doping of p type), TCO transparency conducting layer 213 and p type Ohm contact electrode 214; Below multi-quantum pit structure 200, has n
+The GaN layer 204 of (heavy doping of n type), GaN layer 203, the GaN resilient coating 201 that the n type mixes and GaN layer 202 and substrate 11 and and the n that plays the non-doping of cushioning effect equally mix
+The n type electrode 215 of GaN layer 204 ohmic contact of mixing.Each multi-quantum pit structure 200 comprises N quantum well, and the N in the described N quantum well comprises more than or equal to 1 and smaller or equal to 100 integer.
In order to obtain the light wave of different wave length, in the present embodiment, the optical band gap of barrier layer 205 materials of the first multiple quantum well light emitting unit 10 is greater than 2eV, comprise GaN, AlGaAs or other band gap are higher than the above material of 2.0eV, the optical band gap of potential well layer 206 materials is less than the 2eV material, as GaAs, InP or other band gap material less than 2eV; The optical band gap of barrier layer 205 materials of the second multiple quantum well light emitting unit 20 includes but not limited to GaN greater than 2.5eV, and the optical band gap of potential well layer 206 materials is less than 2.5eV, InN for example, GaP, AlP, AlAs or InGaP, or other optical band gap is less than the material of 2.5eV; The optical band gap of barrier layer 205 materials of the 3rd multiple quantum well light emitting unit includes but not limited to GaN greater than 3eV, and the optical band gap of potential well layer 206 materials includes but not limited to InGaN less than 3eV.Can change the band gap of potential well layer by the doping content of regulating indium (In), thereby change the wavelength that the multiple quantum well light emitting unit emits beam.The first multiple quantum well light emitting unit 10 in the present embodiment sends ruddiness, and the second multiple quantum well light emitting unit 20 sends green glow, and the 3rd multiple quantum well light emitting unit 30 sends blue light or deep ultraviolet (UV) light, becomes white light after the mixing.
Fig. 4 and Fig. 5 comprise the situation of a plurality of multi-quantum pit structures for the multiple quantum well light emitting unit.The multiple quantum well light emitting unit.As shown in Figure 4, in the present embodiment, 10,20 or 30 3 multi-quantum pit structures 220,230 and 240 in multiple quantum well light emitting unit.In other embodiments, multi-quantum pit structure can also be two or more.First multi-quantum pit structure 220 is positioned at the top of n type Doped GaN layer 204, and the 3rd multi-quantum pit structure 240 is positioned at the below of described p type doped with Al GaN layer 211, and second multi-quantum pit structure 230 is between the first and the 3rd multi-quantum pit structure 220 and 240.As preferred embodiment, the emission wavelength of first multi-quantum pit structure 220 is greater than the emission wavelength of second multi-quantum pit structure 230, and the emission wavelength of second multi-quantum pit structure 230 is greater than the emission wavelength of the 3rd multi-quantum pit structure 240.For this reason, the optical band gap of barrier layer 205 materials of first multi-quantum pit structure 200 is greater than 2eV, and the optical band gap of potential well layer 206 materials is less than the 2eV material; The optical band gap of barrier layer 207 materials of second multi-quantum pit structure 230 is greater than 2.5eV, and the optical band gap of potential well layer 208 materials is less than 2.5eV; The optical band gap of barrier layer 209 materials of the 3rd multi-quantum pit structure 240 is greater than 3eV, and the optical band gap of potential well layer 210 materials is less than 3eV.
The material of the barrier layer 205 of first multi-quantum pit structure 220 includes but not limited to GaN, AlGaAs, and the material of potential well layer 206 includes but not limited to GaAs, InP.The material of the barrier layer 207 of second multi-quantum pit structure 230 includes but not limited to GaN, and the material of potential well layer 208 includes but not limited to InN, GaP, AlP, AlAs, InGaP.The material of the barrier layer 209 of the 3rd multi-quantum pit structure 240 includes but not limited to GaN, and the material of potential well layer 210 includes but not limited to InGaN.
In another embodiment shown in Figure 5, between first multi-quantum pit structure 220 and second multi-quantum pit structure 230, has high band gap barrier material layer 215 and 216 between second multi-quantum pit structure 230 and the 3rd multi-quantum pit structure 240, this high band gap barrier material is AlGaN, can further regulate each multiple quantum well light emitting intensity.
The manufacture method of above-mentioned multi-wave length illuminating diode at first provides substrate, then at described substrate surface deposition GaN resilient coating, n type GaN and n
+GaN, deposition of dielectric materials layer, for example silicon nitride or silica subsequently.Utilize mask lithography technology definition multi-quantum pit structure zone, utilize prepared multi-quantum pit structures such as extension, ion injection.Fig. 6 a to Fig. 6 m is the device profile schematic diagram of explanation multi-wave length illuminating diode manufacture method of the present invention.Shown in Fig. 6 a, substrate 11 is sapphire, silicon chip or germanium, by standard H2 baking substrate 11 is carried out surface clean, deposits GaN resilient coating, n type GaN layer and n then
+The GaN layer.Then at substrate 11 surface deposition dielectric materials layers 12, for example silicon nitride or silica, spin coating photoresist (photoresist) layer 13.Utilize mask 50, by graphical photoresist layers 13 of photoetching process such as exposure, developments, shown in Fig. 6 b; Etch dielectric materials layer 12 is to define the first wavelength multi-quantum pit structure zone 14, shown in Fig. 6 c; Prepare the first wavelength multi-quantum pit structure 10, shown in Fig. 6 d.
Subsequently, deposition of dielectric materials layer 15 is protecting the first wavelength multi-quantum pit structure 10, and spin coating photoresist layer 16, shown in Fig. 6 e; Use the second road photomask 60, by graphical photoresist layers 16 of photoetching process such as exposure, developments, shown in Fig. 6 f; Etch dielectric materials layer 15 and 12 is to define the second wavelength multi-quantum pit structure zone 17, shown in Fig. 6 g; Utilize extension, ion implantation technology to prepare the second wavelength multi-quantum pit structure 20, shown in Fig. 6 h.
Next deposition of dielectric materials layer 18 to be protecting the described second wavelength multi-quantum pit structure 20, and spin coating photoresist layer 19, shown in Fig. 6 i; Use the 3rd road photomask 70, by graphical photoresist layers 19 of photoetching process such as exposure, developments, shown in Fig. 6 j; Etch dielectric materials layer 18,15 and 12 is to define three-wavelength multi-quantum pit structure zone 21, shown in Fig. 6 k; Prepare three-wavelength multi-quantum pit structure 30, shown in Figure 61.
In ensuing processing step, utilize CMP (cmp) technology to grind and remove dielectric materials layer 15 and 18, expose the first wavelength multi-quantum pit structure 10, the second wavelength multi-quantum pit structure 20 and the 3rd multi-quantum pit structure 30 until simultaneously, shown in Fig. 6 m.Keep dielectric materials layer 12, it can be used as the separator between the first wavelength multi-quantum pit structure 10 and the second wavelength multi-quantum pit structure 20 and the 3rd multi-quantum pit structure 30.In technology subsequently, simultaneously at the surface deposition p type AlGaN of the first wavelength multi-quantum pit structure 10, the second wavelength multi-quantum pit structure 20 and the 3rd multi-quantum pit structure 30 layer, p
+GaN layer, tco layer and p type contact electrode.The multi-quantum pit structure of etched portions is to expose n subsequently
+The GaN layer is made n type contact electrode.
The optical band gap of the barrier layer material of the first wavelength multi-quantum pit structure 10 is greater than 2eV, and the optical band gap of potential well layer material is less than the 2eV material; The optical band gap of the barrier layer material of the second wavelength multi-quantum pit structure 20 is greater than 2.5eV, and the optical band gap of potential well layer material is less than 2.5eV; The optical band gap of the barrier layer material of three-wavelength multi-quantum pit structure 30 is greater than 3eV, and the optical band gap of potential well layer material is less than 3eV.Each wavelength multi-quantum pit structure zone emission light is mixed into white light, light intensity that each is regional and wavelength-tunable.The barrier layer material of the described first wavelength multi-quantum pit structure 10 includes but not limited to GaN, AlGaAs, and the potential well layer material includes but not limited to GaAs, InP; The barrier layer material of the second wavelength multi-quantum pit structure 20 includes but not limited to GaN, and the potential well layer material includes but not limited to InN, GaP, AlP, AlAs, InGaP; The barrier layer material of three-wavelength multi-quantum pit structure 30 includes but not limited to GaN, and the potential well layer material includes but not limited to InGaN.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Any those of ordinary skill in the art are not breaking away under the technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the protection range of technical solution of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (17)
1. a multi-wave length illuminating diode is characterized in that: comprise substrate and a plurality of multiple quantum well light emittings unit that is positioned on the described substrate, wherein, become white light after the different feasible mixing of the wavelength of described a plurality of multiple quantum well light emittings unit emitted light.
2. multi-wave length illuminating diode as claimed in claim 1 is characterized in that: the quantity of described a plurality of multiple quantum well light emittings unit is more than or equal to 2.
3. multi-wave length illuminating diode as claimed in claim 2 is characterized in that: described multiple quantum well light emitting unit comprises multi-quantum pit structure and is positioned at AlGaN layer, the p of the p type doping of described multi-quantum pit structure top
+The GaN layer that mixes, nesa coating and p type Ohm contact electrode; With the n that is positioned at described multi-quantum pit structure below
+GaN layer, GaN resilient coating, n type Ohm contact electrode that the GaN layer that mixes, n type mix.
4. multi-wave length illuminating diode as claimed in claim 3 is characterized in that: each multi-quantum pit structure comprises N quantum well, and the N in the described N quantum well comprises more than or equal to 1 and smaller or equal to 100 integer.
5. multi-wave length illuminating diode as claimed in claim 1, it is characterized in that: described a plurality of multiple quantum well light emittings unit comprises the first multiple quantum well light emitting unit, the second multiple quantum well light emitting unit and the 3rd multiple quantum well light emitting unit, the optical band gap of the barrier layer material of the described first multiple quantum well light emitting unit is greater than 2eV, and the optical band gap of potential well layer material is less than the 2eV material; The optical band gap of the barrier layer material of the described second multiple quantum well light emitting unit is greater than 2.5eV, and the optical band gap of potential well layer material is less than 2.5eV; The optical band gap of the barrier layer material of described the 3rd multiple quantum well light emitting unit is greater than 3eV, and the optical band gap of potential well layer material is less than 3eV.
6. multi-wave length illuminating diode as claimed in claim 5 is characterized in that:
The barrier layer material of the described first multiple quantum well light emitting unit includes but not limited to GaN, AlGaAs, and the potential well layer material includes but not limited to GaAs, InP;
The barrier layer material of the described second multiple quantum well light emitting unit includes but not limited to GaN, and the potential well layer material includes but not limited to InN, GaP, AlP, AlAs, InGaP;
The barrier layer material of described the 3rd multiple quantum well light emitting unit includes but not limited to GaN, and the potential well layer material includes but not limited to InGaN.
7. multi-wave length illuminating diode as claimed in claim 3, it is characterized in that: described multi-quantum pit structure comprises first multi-quantum pit structure, second multi-quantum pit structure and the 3rd multi-quantum pit structure, described first multi-quantum pit structure is positioned at the top of n type Doped GaN layer, described the 3rd multi-quantum pit structure is positioned at the below of described p type doped with Al GaN layer, and described second multi-quantum pit structure is between the first and the 3rd multi-quantum pit structure.
8. multi-wave length illuminating diode as claimed in claim 7, it is characterized in that: the emission wavelength of described first multi-quantum pit structure is greater than the emission wavelength of described second multi-quantum pit structure, the emission wavelength of described second multi-quantum pit structure is greater than the emission wavelength of described the 3rd multi-quantum pit structure, wherein, the optical band gap of the barrier layer material of described first multi-quantum pit structure is greater than 2eV, and the optical band gap of potential well layer material is less than the 2eV material; The optical band gap of the barrier layer material of described second multi-quantum pit structure is greater than 2.5eV, and the optical band gap of potential well layer material is less than 2.5eV; The optical band gap of the barrier layer material of described the 3rd multi-quantum pit structure is greater than 3eV, and the optical band gap of potential well layer material is less than 3eV.
9. multi-wave length illuminating diode as claimed in claim 8 is characterized in that:
The barrier layer material of described first multi-quantum pit structure includes but not limited to GaN, AlGaAs, and the potential well layer material includes but not limited to GaAs, InP;
The barrier layer material of described second multi-quantum pit structure includes but not limited to GaN, and the potential well layer material includes but not limited to InN, GaP, AlP, AlAs, InGaP;
The barrier layer material of described the 3rd multi-quantum pit structure includes but not limited to GaN, and the potential well layer material includes but not limited to InGaN.
10. multi-wave length illuminating diode as claimed in claim 7 is characterized in that: have high band gap barrier material layer between described a plurality of multi-quantum pit structures.
11. multi-wave length illuminating diode as claimed in claim 10 is characterized in that: described high band gap barrier material is AlGaN.
12. multi-wave length illuminating diode as claimed in claim 1 is characterized in that: described substrate is sapphire, silicon or germanium.
13. the manufacture method of a multi-wave length illuminating diode comprises:
Substrate is provided,
At described substrate surface deposition GaN resilient coating, n type GaN and n
+GaN;
The deposition of dielectric materials layer;
Utilize mask lithography technology definition multi-quantum pit structure zone, the preparation multi-quantum pit structure;
Remove described dielectric materials layer;
Preparation p type GaN, p
+GaN and contact electrode.
14. method as claimed in claim 13 is characterized in that: the step of described preparation multi-quantum pit structure comprises the following steps;
Use the first road photomask,, prepare the first wavelength multi-quantum pit structure to define the first wavelength multi-quantum pit structure zone;
Deposition of dielectric materials is used the second road photomask to protect the described first wavelength multi-quantum pit structure, to define the second wavelength multi-quantum pit structure zone, prepares the second wavelength multi-quantum pit structure;
Deposition of dielectric materials is used the 3rd road photomask to protect the described second wavelength multi-quantum pit structure, to define three-wavelength multi-quantum pit structure zone, prepares the three-wavelength multi-quantum pit structure.
15. method as claimed in claim 14 is characterized in that: described each wavelength multi-quantum pit structure zone emission light is mixed into white light, light intensity that each is regional and wavelength-tunable.
16. method as claimed in claim 15 is characterized in that: the optical band gap of the barrier layer material of the described first wavelength multi-quantum pit structure is greater than 2eV, and the optical band gap of potential well layer material is less than the 2eV material; The optical band gap of the barrier layer material of the described second wavelength multi-quantum pit structure is greater than 2.5eV, and the optical band gap of potential well layer material is less than 2.5eV; The optical band gap of the barrier layer material of described three-wavelength multi-quantum pit structure is greater than 3eV, and the optical band gap of potential well layer material is less than 3eV.
17. method as claimed in claim 16 is characterized in that:
The barrier layer material of the described first wavelength multi-quantum pit structure includes but not limited to GaN, AlGaAs, and the potential well layer material includes but not limited to GaAs, InP;
The barrier layer material of the described second wavelength multi-quantum pit structure includes but not limited to GaN, and the potential well layer material includes but not limited to InN, GaP, AlP, AlAs, InGaP;
The barrier layer material of described three-wavelength multi-quantum pit structure includes but not limited to GaN, and the potential well layer material includes but not limited to InGaN.
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| CN108831972A (en) * | 2018-06-26 | 2018-11-16 | 山东浪潮华光光电子股份有限公司 | GaAs basal growth prepares the flip LED method of compound multi-quantum pit structure |
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