CN106653962A - Preparation method of integrated red, green and blue chips on same substrate - Google Patents
Preparation method of integrated red, green and blue chips on same substrate Download PDFInfo
- Publication number
- CN106653962A CN106653962A CN201710044325.3A CN201710044325A CN106653962A CN 106653962 A CN106653962 A CN 106653962A CN 201710044325 A CN201710044325 A CN 201710044325A CN 106653962 A CN106653962 A CN 106653962A
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- China
- Prior art keywords
- substrate
- etching
- green
- exposure
- etching glue
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Abstract
The invention provides a preparation method of integrated red, green and blue chips on a same substrate. The method comprises the following steps of firstly coarsening an epitaxial substrate, coating the substrate with etching glue, putting a blue-light hollowed-out mask plate fabricated in advance on the etching glue for exposure, removing an exposure part and carrying out blue-light epitaxial growth on the substrate; coating the substrate with a layer of photoresist for the second time, putting a green-light hollowed-out mask plate fabricated in advance on the etching glue for exposure, removing the exposure part and carrying out epitaxial growth; coating the substrate with the etching glue for the third time after green-light epitaxy is completed, putting a red-light hollowed-out mask plate fabricated in advance on the etching glue for exposure and removing the exposure part; and carrying out epitaxial growth in a green-light epitaxial furnace and splitting a blue chip and a green chip as a whole to obtain the RGB chips with the unified substrate. Epitaxial growth of the red, green and blue chips is achieved separately through etching glue coating, exposure, etching and hollowing on the same substrate, and RGB miniaturization is achieved.
Description
Technical field
The present invention relates to LED luminescent wafer technical fields, particularly a kind of RGB chip integrated on the same substrate
Preparation method.
Background technology
LED industry most realize RGB the most for common mode be the independent color chip of red, green, blue three is placed on it is same
It is in LED support or red, green, blue lamp bead is arranged together realizing by certain arrangement mode.
Existing RGB be achieved in that by the independent color chip of red, green, blue three be placed in same LED support or by it is red,
Green, blue lamp pearl is arranged together realizing by certain arrangement mode.But both the above mode cannot all realize that RGB's is miniature
Change, it is impossible to adapt to the demand of future VR, AR to high-res picture.
The content of the invention
To solve above-mentioned technical problem, the invention provides a kind of preparation side of RGB chip integrated on the same substrate
Method, it is comprised the following steps：
S1:Substrate is roughened first, last layer is applied on substrate and is more than the resistant to elevated temperatures etching glue of 10um, will be set
Blue light hollow out reticle plate is placed on etching glue, is got rid of exposed portion by exposure, development, etching；
S2：Again the substrate after etching is put into into epitaxy growth in blue light epitaxial furnace, after the completion of blue light epitaxy, then secondary coating
One layer of photoresist, set green glow hollow out reticle plate is placed on etching glue, and by exposure, development, etching will exposure
Get rid of part；
S3：Then the substrate after etching is put into into epitaxy growth in green glow epitaxial furnace, after the completion of green glow epitaxy again for the third time
Coating etching glue, set ruddiness hollow out reticle plate is placed on etching glue, and by exposure, development, etching will exposure
Get rid of part；
S4：It is last again the substrate after etching to be put into into epitaxy growth in green glow epitaxial furnace, finally by evaporation, electrode system
Make, bluish-green chip as sliver is integrally carried out, is obtained unifying the RGB chips of substrate by test technology.
The invention has the advantages that：
The present invention realizes that respectively red, green, blue chip epitaxy is realized by etching glue hollow out by coating on the same substrate,
Can realize that RGB is miniaturized.
Certainly, the arbitrary product for implementing the present invention it is not absolutely required to while reaching all the above advantage.
Description of the drawings
In order to be illustrated more clearly that the technical scheme of the embodiment of the present invention, use required for describing to embodiment below
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for ability
For the those of ordinary skill of domain, on the premise of not paying creative work, can be attached to obtain others according to these accompanying drawings
Figure.
The preparation method schematic flow sheet of the RGB chip integrated on the same substrate that Fig. 1 is provided for the present invention.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than the embodiment of whole.It is based on
Embodiment in the present invention, it is all other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
As shown in figure 1, a kind of preparation method of RGB chip integrated on the same substrate is embodiments provided,
It is comprised the following steps：
S1:Substrate is roughened first, last layer etching glue (photoresist) resistant to elevated temperatures more than 10um is applied on substrate, by thing
First ready-made blue light hollow out reticle plate is placed in etching glue (photoresist), by exposure, development, etches (photoetching) by exposure portion
Divide and get rid of；
S2：Again the substrate after etching (photoetching) is put into into epitaxy growth in blue light epitaxial furnace, after the completion of blue light epitaxy, then two
One layer of photoresist of secondary coating, set green glow hollow out reticle plate is placed in etching glue (photoresist), by exposure, is shown
Exposed portion is got rid of in shadow, etching (photoetching)；
S3：Then the substrate after etching (photoetching) is put into into epitaxy growth in green glow epitaxial furnace, after the completion of green glow epitaxy again
Third time coating etching glue (photoresist), set ruddiness hollow out reticle plate is placed in etching glue (photoresist), is led to
Exposed portion is got rid of in overexposure, development, etching (photoetching)；
S4：It is last again the substrate after etching (photoetching) to be put into into epitaxy growth in green glow epitaxial furnace, finally by evaporation, electricity
Pole makes, bluish-green chip as sliver is integrally carried out, is obtained unifying the RGB chips of substrate by test technology.
The present invention realizes respectively red, green, blue chip by etching glue (photoresist) hollow out by coating on the same substrate
Epitaxy is realized, it is possible to achieve RGB is miniaturized.
Present invention disclosed above preferred embodiment is only intended to help and illustrates the present invention.Preferred embodiment is not detailed
All of details is described, it is only described specific embodiment also not limit the invention.Obviously, according to the content of this specification,
Can make many modifications and variations.These embodiments are chosen and specifically described to this specification, is to preferably explain the present invention
Principle and practical application so that skilled artisan can be best understood by and utilize the present invention.The present invention is only
Limited by claims and its four corner and equivalent.
Claims (1)
1. a kind of preparation method of RGB chip integrated on the same substrate, it is characterised in that comprise the following steps：
S1:Substrate is roughened first, last layer is applied on substrate and is more than the resistant to elevated temperatures etching glue of 10um, by set blue light
Hollow out reticle plate is placed on etching glue, is got rid of exposed portion by exposure, development, etching；
S2：Again the substrate after etching is put into into epitaxy growth in blue light epitaxial furnace, after the completion of blue light epitaxy, then secondary one layer of coating
Photoresist, set green glow hollow out reticle plate is placed on etching glue, by exposure, development, is etched exposed portion
Get rid of；
S3：Then the substrate after etching is put into into epitaxy growth in green glow epitaxial furnace, again third time is coated after the completion of green glow epitaxy
Etching glue, set ruddiness hollow out reticle plate is placed on etching glue, by exposure, development, is etched exposed portion
Get rid of；
S4：It is last again the substrate after etching to be put into into epitaxy growth in green glow epitaxial furnace, finally by evaporation, electrode fabrication, survey
Bluish-green chip as sliver is integrally carried out, is obtained unifying the RGB chips of substrate by trial work skill.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710044325.3A CN106653962A (en) | 2017-01-19 | 2017-01-19 | Preparation method of integrated red, green and blue chips on same substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710044325.3A CN106653962A (en) | 2017-01-19 | 2017-01-19 | Preparation method of integrated red, green and blue chips on same substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106653962A true CN106653962A (en) | 2017-05-10 |
Family
ID=58840860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710044325.3A Pending CN106653962A (en) | 2017-01-19 | 2017-01-19 | Preparation method of integrated red, green and blue chips on same substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106653962A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107919414A (en) * | 2017-12-04 | 2018-04-17 | 歌尔股份有限公司 | Method, manufacture method, device and the electronic equipment of micro- light emitting diode transfer |
| CN110957409A (en) * | 2019-11-28 | 2020-04-03 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer, light emitting diode module and manufacturing method thereof |
| CN111146316A (en) * | 2020-02-21 | 2020-05-12 | 湘能华磊光电股份有限公司 | Preparation method of RGB LED integrated display array |
Citations (3)
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| US20060081871A1 (en) * | 2004-09-30 | 2006-04-20 | Osram Opto Semiconductors Gmbh | Multiple light-emitting diode arrangement |
| CN101908588A (en) * | 2010-07-16 | 2010-12-08 | 泉州市金太阳电子科技有限公司 | Multi-wavelength light-emitting diode and manufacturing method thereof |
| CN106097904A (en) * | 2016-07-15 | 2016-11-09 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode display part and preparation method thereof |
-
2017
- 2017-01-19 CN CN201710044325.3A patent/CN106653962A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060081871A1 (en) * | 2004-09-30 | 2006-04-20 | Osram Opto Semiconductors Gmbh | Multiple light-emitting diode arrangement |
| CN101908588A (en) * | 2010-07-16 | 2010-12-08 | 泉州市金太阳电子科技有限公司 | Multi-wavelength light-emitting diode and manufacturing method thereof |
| CN106097904A (en) * | 2016-07-15 | 2016-11-09 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode display part and preparation method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107919414A (en) * | 2017-12-04 | 2018-04-17 | 歌尔股份有限公司 | Method, manufacture method, device and the electronic equipment of micro- light emitting diode transfer |
| WO2019109390A1 (en) * | 2017-12-04 | 2019-06-13 | 歌尔股份有限公司 | Transfer method and manufacturing method and device of micro light emitting diode and electronic device |
| US11107946B2 (en) | 2017-12-04 | 2021-08-31 | Goertek Inc. | Method of transferring micro-LEDs from a gallium arsenide substrate |
| CN110957409A (en) * | 2019-11-28 | 2020-04-03 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer, light emitting diode module and manufacturing method thereof |
| CN111146316A (en) * | 2020-02-21 | 2020-05-12 | 湘能华磊光电股份有限公司 | Preparation method of RGB LED integrated display array |
| CN111146316B (en) * | 2020-02-21 | 2021-08-27 | 湘能华磊光电股份有限公司 | Preparation method of RGB LED integrated display array |
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Application publication date: 20170510 |