CN112531049B - 量子点吸光层及其制备方法、应用 - Google Patents
量子点吸光层及其制备方法、应用 Download PDFInfo
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- CN112531049B CN112531049B CN202010999796.1A CN202010999796A CN112531049B CN 112531049 B CN112531049 B CN 112531049B CN 202010999796 A CN202010999796 A CN 202010999796A CN 112531049 B CN112531049 B CN 112531049B
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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CN113328006A (zh) * | 2021-04-02 | 2021-08-31 | 华中科技大学 | 一种量子点光电探测器以及制备方法 |
CN113410320A (zh) * | 2021-05-25 | 2021-09-17 | 常熟理工学院 | 一种宽光谱响应光电探测器及其制备方法 |
GB2627773A (en) * | 2023-02-28 | 2024-09-04 | Quantum Advanced Solutions Ltd | System and method for eye-tracking |
Citations (5)
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CN102110736A (zh) * | 2010-11-09 | 2011-06-29 | 北京理工大学 | 一种基于胶体量子点的红外光电探测器及其制备方法 |
CN104974759A (zh) * | 2014-04-11 | 2015-10-14 | 韩国机械研究院 | 由卤素盐稳定化的量子点及其制造方法 |
CN108832014A (zh) * | 2018-06-22 | 2018-11-16 | 南京邮电大学通达学院 | 基于CdTe/CdS量子点的发光二极管及其制备方法 |
CN110311007A (zh) * | 2019-07-09 | 2019-10-08 | 上海科技大学 | 一种量子点近红外光电探测器及其制备方法 |
WO2020105087A1 (ja) * | 2018-11-19 | 2020-05-28 | 花王株式会社 | 光吸収層、光電変換素子、及び太陽電池 |
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WO2013078249A1 (en) * | 2011-11-22 | 2013-05-30 | Qd Vision Inc. | Method of making quantum dots |
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CN102110736A (zh) * | 2010-11-09 | 2011-06-29 | 北京理工大学 | 一种基于胶体量子点的红外光电探测器及其制备方法 |
CN104974759A (zh) * | 2014-04-11 | 2015-10-14 | 韩国机械研究院 | 由卤素盐稳定化的量子点及其制造方法 |
CN108832014A (zh) * | 2018-06-22 | 2018-11-16 | 南京邮电大学通达学院 | 基于CdTe/CdS量子点的发光二极管及其制备方法 |
WO2020105087A1 (ja) * | 2018-11-19 | 2020-05-28 | 花王株式会社 | 光吸収層、光電変換素子、及び太陽電池 |
CN110311007A (zh) * | 2019-07-09 | 2019-10-08 | 上海科技大学 | 一种量子点近红外光电探测器及其制备方法 |
Non-Patent Citations (1)
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