CN112510098A - Efficient high-power axial diode and electronic equipment - Google Patents
Efficient high-power axial diode and electronic equipment Download PDFInfo
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- CN112510098A CN112510098A CN202011527219.9A CN202011527219A CN112510098A CN 112510098 A CN112510098 A CN 112510098A CN 202011527219 A CN202011527219 A CN 202011527219A CN 112510098 A CN112510098 A CN 112510098A
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- axial diode
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- 241000587161 Gomphocarpus Species 0.000 claims abstract description 46
- 230000017525 heat dissipation Effects 0.000 abstract description 19
- 238000004806 packaging method and process Methods 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000001788 irregular Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention discloses a high-efficiency high-power axial diode and electronic equipment, wherein the axial diode comprises: a first lead; the second lead is positioned below the first lead; the first nail head is arranged at the tail end of the first lead; the second nail head is arranged at the upper end of the second lead; the chip is positioned between the first nail head and the second nail head, one side of the chip is connected with the first nail head, and the other side of the chip is connected with the second nail head; the plastic packaging body wraps the chip, the first pin head, part of the first lead and part of the second pin head; the electronic device comprises the aforementioned axial diode. The invention solves the technical problems of insufficient heat dissipation capability and forward and reverse surge capability of the diode in the prior art.
Description
Technical Field
The invention relates to the technical field of electronic elements, in particular to a high-efficiency high-power axial diode and electronic equipment.
Background
Diode (Diode), an electronic component, has two electrodes, and the most common function of a Diode is to allow current to pass in a single direction (called forward bias) and to block current in the reverse direction (called reverse bias).
In the aspect of heat dissipation of the existing diode, an upper nail head, a lower nail head and a chip are usually completely wrapped during plastic package, so that the heat dissipation performance of the diode is influenced to a certain extent, a smaller and thinner lead nail head is often used, and meanwhile, the chip is positioned in the middle of a plastic package body, so that the structure is not beneficial to heat dissipation of the chip; in the aspect of forward and reverse surge, the existing lead is usually a round straight line, which is not beneficial to improving the forward and reverse surge resistance of the diode.
Disclosure of Invention
The invention aims to provide a high-efficiency high-power axial diode and electronic equipment, and solves the technical problem that the heat dissipation capacity and the reverse surge capacity of the diode in the prior art are insufficient.
The embodiment of the application discloses high-efficient high-power axial type diode includes:
a first lead;
a second lead located below the first lead;
a first nail head mounted at the first lead end;
a second nail head mounted at an upper end of the second lead;
the chip is positioned between the first nail head and the second nail head, one side of the chip is connected with the first nail head, and the other side of the chip is connected with the second nail head;
and the plastic package body wraps the chip, the first nail head, part of the first lead and part of the second nail head.
The embodiment of the application discloses a diode, improves the plastic packaging range of a plastic packaging body, realizes the external heat dissipation of the plastic packaging body, completes the improvement of the heat dissipation performance of the diode, and simultaneously improves the forward and reverse surge impact resistance of the diode.
On the basis of the technical scheme, the embodiment of the application can be further improved as follows:
furthermore, the chip is located on the lower side of the transverse center line in the plastic package body, and the assembly position of the chip is changed, so that the chip is close to the second pin head, and the heat dissipation performance of the chip can be further improved.
Further, the first nail head is in a ladder-shaped shape, and the diameter of the first nail head is smaller than that of the second nail head.
Further, the diameter of the second head is larger than the diameter of the chip.
Further, the first lead is composed of a straight line section and a special-shaped section, the end of the special-shaped section is connected with the first nail head, and the special-shaped section is located inside the plastic package body.
Further, the special-shaped section is S-shaped.
Further, the special-shaped section is a C-shaped section.
Further, the special-shaped section is a wave-shaped section.
The present application also provides an electronic device comprising an axial diode as described above.
One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:
1. the packaging range of the plastic packaging body is improved, the second nail head portion is exposed and is in direct contact with air, and the heat dissipation performance of the diode is improved.
2. The embodiment of the application improves the assembly position of the chip, and can further improve the heat radiation performance of the diode.
3. The embodiment of the application improves the structure of the lead, increases the contact area of the lead and the plastic package body, and improves the heat dissipation performance, so that the forward and reverse surge capacity of the diode is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a high-efficiency high-power axial diode according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an internal structure of a high-efficiency high-power axial diode according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of another internal structure of a high efficiency high power axial diode according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of another internal structure of a high-efficiency high-power axial diode according to an embodiment of the present invention;
reference numerals:
1-a first lead; 2-a second lead; 3-a first nail head; 4-second stud; 5-chip; 6-plastic packaging body;
101-straight line segment; 102-a profiled section.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and therefore are only examples, and the protection scope of the present invention is not limited thereby.
It is to be noted that, unless otherwise specified, technical or scientific terms used herein shall have the ordinary meaning as understood by those skilled in the art to which the invention pertains.
In the description of the present application, it is to be understood that the terms "upper", "lower", "inner", "outer", "top", "bottom", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral parts; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
The embodiment of the application provides a high-efficiency high-power axial diode and electronic equipment, and solves the technical problem that the heat dissipation capacity and the reverse surge capacity of the diode are insufficient in the prior art.
The general idea of the embodiment of the application is as follows: the embodiment of the application changes the plastic packaging range of the existing plastic packaging body, so that the nail head part is exposed, and the heat is directly dissipated to the air, thereby improving the heat dissipation performance of the diode; meanwhile, the lead is designed, the contact area between the lead and the plastic package body is increased, the heat dissipation performance is improved, and the reverse surge capacity of the diode is improved.
In order to better understand the technical solutions, the technical solutions will be described in detail below with reference to the drawings and the detailed description.
Example 1
As shown in fig. 1-2, the present embodiment provides a high-efficiency high-power axial diode, which includes:
a first lead 1;
the second lead 2 is positioned below the first lead 1, and the vertical central line of the first lead 1 is consistent with that of the second lead 2, so that the assembly is convenient, and the stability of the axial diode is improved;
a first nail head 3, wherein the first nail head 3 is arranged at the tail end of the first lead 1;
a second nail head 4, said second nail head 4 being mounted on an upper end of said second lead 2;
a chip 5, said chip 5 being located between said first stud 3 and said second stud 4, one side of said chip 5 being connected to said first stud 3 and the other side being connected to said second stud 4;
the plastic package body 6 wraps the chip 5, the first nail head 3, part of the first lead 1 and part of the second nail head 4; in the embodiment of the application, the first nail head 3 is assembled with the first lead positioned above in a matching way, the second nail head 4 is assembled with the second lead 4 positioned below in a matching way, and the chip 5 is positioned between the first nail head 3 and the second nail head; the encapsulation scope of the plastic package body 6 in the embodiment of the present application is inconsistent with the encapsulation scope of the existing axial diode, and the plastic package body 6 in the present application only encapsulates part of the second pin head 4, i.e. part of the second pin head 4 is exposed outside the plastic package body 6, so that the heat dissipation outside the plastic package body is realized, and the heat dissipation effect can be improved.
Specifically, the chip 5 is located at a position lower than the horizontal center line inside the plastic package body 6, and the assembly position of the chip 5 in the embodiment of the present application is a lower position relative to the plastic package body 6, that is, the chip 5 is close to the second pin head, so that the heat dissipation effect can be further improved.
Specifically, the first nail head 3 is in a trapezoidal shape, and the diameter of the first nail head 3 is smaller than that of the second nail head 4, and the overall heat dissipation performance of the product can be improved due to the size design.
Specifically, the diameter of the second stud 4 is larger than that of the chip 5, so that the stability of the assembly of the chip 5 can be improved, and the heat dissipation effect can be ensured.
The first lead 1 consists of a straight line segment 101 and an irregular segment 102, the end of the irregular segment 101 is connected with the first nail head 3, the irregular segment 102 is positioned inside the plastic package body 6, and the irregular segment 102 is a lead segment with radian; the contact area between the special-shaped section 102 and the plastic package body 6 in the embodiment of the application is larger, and the heat dissipation performance is improved in a multiple mode, so that the forward and reverse surge capacity of the diode is improved.
As shown in fig. 1, the special-shaped section 102 is S-shaped, so that the reverse surge capability of the diode can be improved; the profiled section 102 may also be a C-shaped section, or a wave-shaped section, as shown in fig. 3 and 4.
In another embodiment of the present invention, an electronic device is further provided, which includes the axial diode according to the foregoing embodiment.
In the description of the present invention, numerous specific details are set forth. It is understood, however, that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention, and they should be construed as being included in the following claims and description.
Claims (9)
1. An efficient high power axial diode comprising:
a first lead;
a second lead located below the first lead;
a first nail head mounted at the first lead end;
a second nail head mounted at an upper end of the second lead;
the chip is positioned between the first nail head and the second nail head, one side of the chip is connected with the first nail head, and the other side of the chip is connected with the second nail head;
and the plastic package body wraps the chip, the first nail head, part of the first lead and part of the second nail head.
2. A high efficiency high power axial diode according to claim 1 wherein said chip is located within said plastic package below the transverse centerline.
3. A high efficiency high power axial diode according to claim 1 wherein said first head is of a trapezoidal shape and the diameter of the first head is smaller than the diameter of the second head.
4. A high efficiency high power axial diode according to claim 3 wherein said second head has a diameter greater than the diameter of said chip.
5. A high efficiency high power axial diode according to any one of claims 1 to 4 wherein said first lead is composed of a straight line segment and a shaped segment, the end of said shaped segment is connected to said first pin head, and said shaped segment is located inside said plastic package.
6. A high efficiency high power axial diode according to claim 5 wherein said shaped section is S shaped.
7. A high efficiency high power axial diode according to claim 5 wherein said shaped section is a C-shaped section.
8. The high efficiency high power axial diode of claim 5, wherein said shaped segment is a wave shaped segment.
9. An electronic device comprising an axial diode according to any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011527219.9A CN112510098A (en) | 2020-12-22 | 2020-12-22 | Efficient high-power axial diode and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011527219.9A CN112510098A (en) | 2020-12-22 | 2020-12-22 | Efficient high-power axial diode and electronic equipment |
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| Publication Number | Publication Date |
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| CN112510098A true CN112510098A (en) | 2021-03-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202011527219.9A Pending CN112510098A (en) | 2020-12-22 | 2020-12-22 | Efficient high-power axial diode and electronic equipment |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11330332A (en) * | 1998-05-14 | 1999-11-30 | Sanken Electric Co Ltd | Semiconductor device |
| CN202189795U (en) * | 2011-08-02 | 2012-04-11 | 山东沂光电子股份有限公司 | Rectifier diode for automobile |
| CN102709276A (en) * | 2012-06-16 | 2012-10-03 | 中国振华集团永光电子有限公司 | Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof |
| CN103871874A (en) * | 2012-12-17 | 2014-06-18 | 中国振华集团永光电子有限公司 | Manufacturing method and structure of high-power silicon transient voltage suppressor diode |
| CN105006491A (en) * | 2015-08-07 | 2015-10-28 | 南通明芯微电子有限公司 | Point contact type rectifier diode |
| CN213519981U (en) * | 2020-12-22 | 2021-06-22 | 昆山晨伊半导体有限公司 | Efficient high-power axial diode and electronic equipment |
-
2020
- 2020-12-22 CN CN202011527219.9A patent/CN112510098A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11330332A (en) * | 1998-05-14 | 1999-11-30 | Sanken Electric Co Ltd | Semiconductor device |
| CN202189795U (en) * | 2011-08-02 | 2012-04-11 | 山东沂光电子股份有限公司 | Rectifier diode for automobile |
| CN102709276A (en) * | 2012-06-16 | 2012-10-03 | 中国振华集团永光电子有限公司 | Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof |
| CN103871874A (en) * | 2012-12-17 | 2014-06-18 | 中国振华集团永光电子有限公司 | Manufacturing method and structure of high-power silicon transient voltage suppressor diode |
| CN105006491A (en) * | 2015-08-07 | 2015-10-28 | 南通明芯微电子有限公司 | Point contact type rectifier diode |
| CN213519981U (en) * | 2020-12-22 | 2021-06-22 | 昆山晨伊半导体有限公司 | Efficient high-power axial diode and electronic equipment |
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Effective date of registration: 20230625 Address after: Room 11, 1206 Jinyang East Road, Lujia Town, Kunshan City, Suzhou City, Jiangsu Province Applicant after: KUNSHAN CHENYI SEMICONDUCTOR Co.,Ltd. Address before: Room 11, 1206 Jinyang East Road, Lujia Town, Kunshan City, Suzhou City, Jiangsu Province Applicant before: KUNSHAN CHENYI SEMICONDUCTOR Co.,Ltd. Applicant before: Jiangsu Yingdafu Electronic Technology Co.,Ltd. |
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Country or region after: China Address after: Room 11, 1206 Jinyang East Road, Lujia Town, Kunshan City, Suzhou City, Jiangsu Province Applicant after: Kunshan Daoming Chenyi Semiconductor Co.,Ltd. Address before: Room 11, 1206 Jinyang East Road, Lujia Town, Kunshan City, Suzhou City, Jiangsu Province Applicant before: KUNSHAN CHENYI SEMICONDUCTOR Co.,Ltd. Country or region before: China |
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