CN112501562A - Multi-source electron beam evaporation coating device and film thickness uniformity correction method - Google Patents

Multi-source electron beam evaporation coating device and film thickness uniformity correction method Download PDF

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CN112501562A
CN112501562A CN202011375545.2A CN202011375545A CN112501562A CN 112501562 A CN112501562 A CN 112501562A CN 202011375545 A CN202011375545 A CN 202011375545A CN 112501562 A CN112501562 A CN 112501562A
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evaporation
mechanisms
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film thickness
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CN112501562B (en
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胡震霖
胡茂横
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Shenzhen Huntek Technology Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material

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Abstract

The invention discloses a multisource electron beam evaporation coating device, which comprises a vacuum cavity, a rotating shaft arranged in the vacuum cavity, a rotating disc arranged on the rotating shaft, a substrate arranged at the bottom of the rotating disc, an evaporation plane arranged below the rotating disc, a vertical plate and a correction baffle plate, wherein the vertical plate is arranged on the vertical plate; the vertical plate is vertically arranged below the center of the rotary table and divides the evaporation plane into two parts; a plurality of evaporation mechanisms are arranged in each equally divided evaporation plane, and evaporation materials in the evaporation mechanisms are different; the correction baffle is arranged between the substrate and the plurality of evaporation mechanisms. The device can realize simultaneous coating of multiple evaporation materials on the same substrate, and can be fully and uniformly mixed, and meanwhile, the method for correcting the thickness uniformity of the electron beam evaporation coating film is also provided, so that the film thickness of any point on the substrate to two evaporation materials is uniform and equal, the mixing uniformity of the two evaporation materials is ensured, and the device is high in precision and strong in practicability.

Description

Multi-source electron beam evaporation coating device and film thickness uniformity correction method
Technical Field
The invention relates to the technical field of evaporation coating, in particular to a multi-source electron beam evaporation coating device and a film thickness uniformity correction method.
Background
In the modern high-tech field, such as chip manufacturing, semiconductors, display technology, OLED display device manufacturing, aerospace and other fields, a coating technology is required; in practical operation, two different evaporation materials are required to be coated simultaneously, and high uniformity of mixing of the two evaporation materials is required. Because the deposition laws of the two evaporation materials are completely different, the uniformity of the simultaneous coating is greatly challenged.
Disclosure of Invention
The invention aims to provide a multisource electron beam evaporation coating device, which can realize simultaneous coating of multiple evaporation materials on the same substrate and can be fully and uniformly mixed, and also provides a method for correcting the thickness uniformity of the electron beam evaporation coating film.
In order to realize the purpose, the following technical scheme is adopted:
a multi-source electron beam evaporation coating device comprises a vacuum cavity, a rotating shaft arranged in the vacuum cavity, a rotating disc arranged on the rotating shaft, a substrate arranged at the bottom of the rotating disc, an evaporation plane arranged below the rotating disc, a vertical plate and a correction baffle plate, wherein the vertical plate is arranged on the vertical plate; the vertical plate is vertically arranged below the center of the rotary table and divides the evaporation plane into two parts; a plurality of evaporation mechanisms are arranged in each equally divided evaporation plane, and evaporation materials in the evaporation mechanisms are different; the correction baffle is arranged between the substrate and the plurality of evaporation mechanisms and is used for enabling the film forming thicknesses of the evaporation materials on the substrate to be uniform and the same.
Furthermore, two evaporation mechanisms are arranged in each equally divided evaporation plane, and the distance between the two evaporation mechanisms and the projection center of the rotating shaft in the evaporation plane is greater than or equal to two thirds of the radius of the rotating disc.
Furthermore, an included angle between a connecting line of the evaporation mechanism and the projection center of the rotating shaft in the evaporation plane and a projection transverse line of the vertical plate in the evaporation plane is 45 degrees, and an included angle between a connecting line of the evaporation mechanism and the projection center of the rotating shaft in the evaporation plane and a projection transverse line of the vertical plate in the evaporation plane is 135 degrees.
Further, the distance between the rotary disc and the evaporation plane is larger than or equal to the radius of the rotary disc.
Further, the evaporation mechanism includes a crucible for placing an evaporation material, and an electron gun for emitting an electron beam.
In order to realize the aim, the multi-source electron beam evaporation coating film thickness uniformity correction method comprises the following steps:
s1: a vertical plate is arranged below the center of an inner rotary disc of the vacuum cavity, so that the evaporation plane is equally divided into two parts by the vertical plate;
s2: two evaporation mechanisms with different evaporation materials are arranged in each equally divided evaporation plane, and an expression T of the film forming thickness of the two evaporation mechanisms in each equally divided evaporation plane at any point on the turntable is written according to the actual configuration condition in the vacuum chamber1And T2；
S3: equally dividing the surface of the rotary table into a plurality of annular bands by taking the center of the rotary table as the circle center according to the T1And T2Respectively calculating the theoretical film thickness value T of the two evaporation mechanisms on each ring belt1RAnd T2R；
S4: respectively drawing T by taking the distance between each zone and the center of the turntable as an X axis and the film thickness on each zone as a Y axis1RAnd T2RAnd observing and determining the minimum film thickness value Tmin；
S5: according to TminCalculating the theoretical position and shape of the correction baffle such that T1R＝T2R＝Tmin；
S6: and (4) according to the distance between the actual installation position of the correction baffle and the bottom of the turntable, reducing and correcting the correction baffle obtained by theoretical calculation in proportion to obtain the required actual correction baffle and installing the actual correction baffle.
Further, the S2 includes the following steps:
s21: the above-mentioned
Figure BDA0002808084990000021
Wherein, K1And K2Respectively is the film coating constant of the two evaporation mechanisms;
n1and n2The evaporation constants are respectively determined by the two evaporation mechanisms according to evaporation materials borne by the two evaporation mechanisms;
L1and L2The lengths of connecting lines between the evaporation centers of the two evaporation mechanisms and any film forming point on the turntable are respectively set;
alpha is the space angle between the connecting line between the evaporation center of the evaporation mechanism and the film forming point on the turntable and the vertical normal of the evaporation center.
Further, the S3 includes the following steps:
s31: the above-mentioned
Figure BDA0002808084990000031
Figure BDA0002808084990000035
Wherein R is the distance between each annular belt and the center of the turntable, and phi is a central angle taking the center of the turntable as the center of a circle;
s32: dividing the central angle phi into a plurality of equal parts, and further dividing each annular belt into a plurality of arc sections equally;
s33: calculating alpha, and respectively calculating the film thickness of the two evaporation mechanisms on each arc section according to the alpha:
Figure BDA0002808084990000032
Figure BDA0002808084990000033
s34: t obtained based on S33n1And Tn2T in S311RAnd T2RInto cumulative summed form, i.e.
Figure BDA0002808084990000034
Figure BDA0002808084990000041
Further, the S5 includes the following steps:
s51: two evaporation mechanisms are selected to be close to the film thickness T of a plurality of arc sections with phi of 0 DEG and phi of 180 DEG on each ring beltn1And Tn2And making it equal to zero until the sum of the film thicknesses of the remaining arc sections of the two evaporation mechanisms on the ring belt respectively1R＝∑T2R＝Tmin；
S52: determining the positions of the film thicknesses of the arc sections equal to zero on each arc section according to S51, wherein the positions are areas needing to be shielded;
s53: drawing a distribution diagram of a plurality of annular bands according to the equal proportion of the rotating disc, and drawing an equally divided angle ray in the distribution diagram according to the equally divided central angle of S32;
s54: and marking a plurality of areas needing to be shielded, which are obtained in the step S52, in the annular distribution diagram drawn in the step S53, and connecting the areas to obtain a closed graph, namely the shape of the theoretical correction baffle.
By adopting the scheme, the invention has the beneficial effects that:
the utility model provides a multisource electron beam evaporation coating device, can realize multiple evaporation material and carry out the coating film to same substrate simultaneously through the device, and can fully misce bene, and device overall structure is simple, easily arrange, low in manufacturing cost, easily use widely, simultaneously, still provide an electron beam evaporation coating film thickness homogeneity correction method, adopt the correction baffle that the accurate calculation obtained promptly, and install it between substrate and evaporation mechanism, can block unnecessary membrane material, and then make arbitrary one point on the substrate all evenly equal to the membrane thickness of two kinds of evaporation materials, guarantee its misce bene homogeneity, the precision is high, the practicality is strong.
Drawings
FIG. 1 is a schematic view of the geometry of the present invention;
FIG. 2 is a schematic view of the present invention in a front view;
FIG. 3 is a schematic top plan view of the present invention;
FIG. 4 is a perspective view of the structural arrangement of the present invention;
FIG. 5 is a schematic view of a reduction correction of a correction baffle according to the present invention;
FIG. 6 is a graph illustrating a film thickness profile of an evaporation mechanism according to an embodiment of the present invention;
FIG. 7 is a graph illustrating a film thickness profile of another evaporation mechanism according to an embodiment of the present invention;
FIG. 8 is a graph showing the film thickness profile of FIG. 6 after being corrected by the correction baffle;
FIG. 9 is a graph showing the film thickness profile of FIG. 7 after being modified by the modifying mask;
FIG. 10 is a top view of an arrangement of evaporation mechanisms in an embodiment of the present invention;
FIG. 11 is a top view of an embodiment of the present invention with the addition of a corrective baffle;
wherein the figures identify the description:
1-a rotating shaft; 2, rotating the disc;
3-evaporation plane; 4, vertical plates;
5, correcting the baffle; 6-an evaporation mechanism;
7-vacuum chamber.
Detailed Description
The invention is described in detail below with reference to the figures and the specific embodiments.
Referring to fig. 1 to 11, the invention provides a multi-source electron beam evaporation coating device, which comprises a vacuum chamber 7, a rotating shaft 1 arranged in the vacuum chamber 7, a rotating disc 2 arranged on the rotating shaft 1, a substrate arranged at the bottom of the rotating disc 2, an evaporation plane 3 arranged below the rotating disc 2, a vertical plate 4 and a correction baffle 5; the vertical plate 4 is vertically arranged below the center of the rotary table 2 and divides the evaporation plane 3 into two parts; a plurality of evaporation mechanisms 6 are also arranged in each equally divided evaporation plane 3, and evaporation materials in the plurality of evaporation mechanisms 6 are different; the correcting baffle 5 is arranged between the substrate and the plurality of evaporation mechanisms 6, and the correcting baffle 5 is used for enabling the film forming thicknesses of the plurality of evaporation materials on the substrate to be uniform and the same.
Wherein, two evaporation mechanisms 6 are arranged in each equally divided evaporation plane 3, and the distances between the two evaporation mechanisms 6 and the projection center of the rotating shaft 1 in the evaporation plane 3 are both more than or equal to two thirds of the radius of the rotating disc 2; an included angle between a connecting line of the evaporation mechanism 6 and the projection center of the rotating shaft 1 in the evaporation plane 3 and a projection transverse line of the vertical plate 4 in the evaporation plane 3 is 45 degrees, and an included angle between a connecting line of the evaporation mechanism 6 and the projection center of the rotating shaft 1 in the evaporation plane 3 and the projection transverse line of the vertical plate 4 in the evaporation plane 3 is 135 degrees; the distance between the rotary table 2 and the evaporation plane 3 is larger than or equal to the radius of the rotary table 2; the evaporation mechanism 6 includes a crucible for placing an evaporation material, and an electron gun for emitting an electron beam.
Meanwhile, a multi-source electron beam evaporation coating film thickness uniformity correction method is also provided, and comprises the following steps:
s1: a vertical plate 4 is arranged below the center of the rotary disc 2 in the vacuum cavity 7, so that the vertical plate 4 equally divides the evaporation plane 3 into two parts;
s2: two evaporation mechanisms 6 filled with different evaporation materials are arranged in each equally divided evaporation plane 3, and an expression T of the film forming thickness of the two evaporation mechanisms 6 in each equally divided evaporation plane 3 at any point on the rotary table 2 is written according to the actual configuration condition in the vacuum cavity 71And T2；
S3: equally dividing the surface of the rotary table 2 into equal parts by taking the center of the rotary table 2 as the circle centerA plurality of zones and according to T1And T2Respectively calculating the theoretical film thickness value T of the two evaporation mechanisms 6 on each ring belt1RAnd T2R；
S4: respectively drawing T by taking the distance between each zone and the center of the turntable 2 as an X axis and the film thickness on each zone as a Y axis1RAnd T2RAnd observing and determining the minimum film thickness value Tmin；
S5: according to TminThe theoretical position and shape of the correction baffle 5 are calculated so that T1R＝T2R＝Tmin；
S6: and (3) according to the distance between the actual installation position of the correction baffle 5 and the bottom of the turntable 2, reducing and correcting the correction baffle 5 obtained by theoretical calculation in proportion to obtain the required actual correction baffle 5 and installing the required actual correction baffle 5.
Wherein the S2 includes the steps of:
s21: the above-mentioned
Figure BDA0002808084990000061
Wherein, K1And K2The film coating constants of the two evaporation mechanisms 6 are respectively set;
n1and n2The evaporation constants of the two evaporation mechanisms 6 are determined according to evaporation materials carried by the two evaporation mechanisms respectively;
L1and L2The lengths of connecting lines between the evaporation centers of the two evaporation mechanisms 6 and any film forming point on the turntable 2 are respectively set; alpha is a space included angle between a connecting line between the evaporation center of the evaporation mechanism 6 and a film forming point on the rotary table 2 and a vertical normal of the evaporation center.
The S3 includes the steps of:
s31: the above-mentioned
Figure BDA0002808084990000071
Figure BDA0002808084990000072
Wherein, R is the distance between each annular belt and the center of the turntable 2, phi is a central angle taking the center of the turntable 2 as the center of a circle;
s32: dividing the central angle phi into a plurality of equal parts, and further dividing each annular belt into a plurality of arc sections equally;
s33: calculating alpha, and respectively calculating the film thickness of the two evaporation mechanisms 6 on each arc section according to the alpha:
Figure BDA0002808084990000073
Figure BDA0002808084990000074
s34: t obtained based on S33n1And Tn2T in S311RAnd T2RInto cumulative summed form, i.e.
Figure BDA0002808084990000075
Figure BDA0002808084990000076
The S5 includes the steps of:
s51: two evaporation mechanisms 6 are selected to be close to the film thickness T of a plurality of arc sections with phi of 0 DEG and phi of 180 DEG on each annular beltn1And Tn2And the film thickness is equal to zero until the sum sigma T of the film thicknesses of a plurality of remaining arc sections of the two evaporation mechanisms 6 on the annular belt respectively1R＝∑T2R＝Tmin；
S52: determining the positions of the film thicknesses of the arc sections equal to zero on each arc section according to S51, wherein the positions are areas needing to be shielded;
s53: drawing a distribution diagram of a plurality of annular bands according to the equal proportion size of the turntable 2, and drawing an equally divided angle ray according to an equally divided central angle of S32 in the distribution diagram;
s54: and marking a plurality of areas needing to be shielded, which are obtained in the step S52, in the annular distribution diagram drawn in the step S53, and connecting the areas to obtain a closed graph, namely the shape of the theoretical correction baffle 5.
The working principle of the invention is as follows:
with continued reference to FIGS. 1 through 11, in this embodiment, the vacuum level within the vacuum chamber 7 is at 10-5more than mbr, the number of the vertical plates 4 is 1, and the vertical plates are vertically arranged below the center of the rotary table 2, so that the evaporation plane 3 can be equally divided into two parts; two evaporation mechanisms 6 (evaporation materials in the evaporation mechanisms 6 are different) are arranged in each equally divided evaporation plane 3, and the evaporation materials in the two evaporation mechanisms 6 are uniformly mixed in each equally divided evaporation plane 3, so that uniform mixing in the whole area can be realized; in addition, the principle of the present embodiment is mainly explained by mixing two materials uniformly, and in actual operation, the present embodiment can also be applied to high-uniformity mixed coating of more than 3 materials.
As shown in fig. 1 to 2, according to experimental studies, it was found that the following rules exist in the film thickness distribution of the electron beam evaporation coating film of various evaporation materials:
Figure BDA0002808084990000081
wherein, T: the film thickness of any point on the substrate above the evaporation mechanism 6 (evaporation center) within a certain time;
k: coating constants, constants related to the evaporation material and the parameters of the evaporation mechanism 6;
n: cosine index (evaporation constant) measured by thickness experiment and fitting;
l: the length of a connecting line between the evaporation center of the evaporation mechanism 6 and any film forming point on the turntable 2;
α: the space included angle between the connecting line between the evaporation center of the evaporation mechanism 6 and the film forming point on the turntable 2 and the vertical normal of the evaporation center.
The substrate is rotated on a plane (film-forming plane) around the rotation axis 1 of the turntable 2 because the rotation speed is fast and uniform and, assuming that the electron beam evaporation process is stably controlled, the film thickness is considered to be the same on the zone having the same radius from the rotation center of the turntable 2; because the performance, density and evaporation rule of the two materials are different, the film thickness of any point on the substrate above the two evaporation mechanisms 6 can be obtained as follows:
Figure BDA0002808084990000091
since the substrate is rotated around the center of the turntable 2, the film thickness on the zones of equal radius from the center of the turntable 2 is the same, i.e., the film thickness T at any point on the zone of radius R (the distance of each zone from the center of the turntable 2) with the center angle phi of the turntable 2 as the center of the turntable 2 as the center of the turntable 2RComprises the following steps:
Figure BDA0002808084990000092
Figure BDA0002808084990000093
in order to make the film thickness of the two evaporation materials uniform or proportional at any point on the substrate, it is necessary to ensure that:
T1R＝T2Reither the first or the second substrate is, alternatively,
T1R＝C*T2R，
where C is a proportionality constant.
To achieve this, a correction baffle 5 must be made and placed under the substrate (between the substrate and the two evaporation means 6) to block excess film material so that both evaporation materials have the same or a proportional film thickness on the substrate, whether far or near the center of the turntable 2; the proportionality coefficient C can be assumed to be 1, i.e. two materials are uniformly mixed one by one, and the rest can be analogized, so long as evaporation parameters are controlled (the emission power of the emission gun of the evaporation mechanism 6 is adjusted), the mixing with the proportion of C times can be realized.
To achieve the above object, it is necessary to set a reference value, i.e., the film thickness of the annular band on the substrate where the two materials are the thinnest, as Tmin(ii) a Then, based on the film thickness, the excess film material is blocked by the correction baffle 5 so that the film thickness at any point of the substrate is equal to Tmin(ii) a Moreover, this correction baffle 5 must satisfy simultaneously that, when two evaporation materials are evaporated simultaneously, all points on the substrate have the same film thickness, namely:
T1R＝T2R＝Tminwherein R is between zero and the radius of the turntable 2,
in addition, the center of the turntable 2 is a singular point for manufacturing and installing the correction baffle 5, so that a coated substrate is not recommended to be installed within 5cm from the center of the turntable 2, so that the correction precision is improved, and the installation difficulty of the correction baffle 5 is reduced.
One embodiment will now be described in detail:
as shown in fig. 1 to 4, in this embodiment,
radius R of the turntable 2max＝60cm；
The height of the rotating disc 2 (the distance between the rotating disc 2 and the evaporation plane 3) H is 63.5 cm;
the distance R between one evaporation mechanism 6 and the projection center of the rotating shaft 1 in the evaporation plane 30140cm, and n 14, and an included angle between a connecting line of the evaporation mechanism 6 and the projection center of the rotating shaft 1 in the evaporation plane 3 and a projection transverse line of the vertical plate 4 in the evaporation plane 3 is 45 degrees;
the distance between the other evaporation mechanism 6 and the projection center of the rotating shaft 1 in the evaporation plane 3 is R0245cm, and n 25, the included angle between the connecting line of the projection center of the evaporation mechanism 6 and the rotating shaft 1 in the evaporation plane 3 and the projection transverse line of the vertical plate 4 in the evaporation plane 3 is 135 degrees.
As shown in fig. 3 to 4, in order to calculate α, a new variable β needs to be introduced, where β is an angle between a connecting line between the center of the turntable 2 and the evaporation center, and a connecting line between a projection (point P' in fig. 4) of any point of the substrate film formation on the evaporation plane 3 and the center of the turntable 2, and thus it can be known that,
β1＝Φ-45°，
β2＝135°-Φ，
N＝Rcosβ,
M＝Rsinβ，
D＝R0-N,
Figure BDA0002808084990000101
Figure BDA0002808084990000102
tgα＝a/H,
and further, by the above formula, a, i.e.,
α＝tgα-1(a/H)，
according to alpha, the film thickness of the two evaporation mechanisms 6 on each arc section of the annular band can be calculated, and then T is calculated1RAnd T2RThe integral of (a) is converted into a cumulative summation form, i.e.,
Figure BDA0002808084990000103
Figure BDA0002808084990000111
in this embodiment, the angle unit Φ is divided into 10 ° halves, the ring zone R is 2cm halves, and T in each ring zone can be calculated by the above formulaRThe finer the division of phi and R, the higher the calculation accuracy, and in addition, because the vertical plate 4 is arranged in the vacuum chamber 7, the integral of phi can be calculated only by 0-pi, after calculation, two film thickness curves can be drawn by taking the distance from each ring zone to the center of the turntable 2 as the X axis and the film thickness on each ring zone as the Y axis (T shown in FIGS. 6 to 7)1RAnd T2R) And the minimum value T of the film thickness in the two curves can be observed from the graphminAnd taking the correction as a reference to carry out the next correction.
Setting a reference TminThereafter, the excess arcs in the film thickness summation formula are deleted, even if they are equal to zero, until the sum of the film thicknesses Σ T of the remaining arcs of the two evaporation units 6 on the belt, respectively1R＝∑T2R＝Tmin(ii) a The removed arc segments are the portions to be shielded by the correction baffle 5 (so as to determine the shape and position of the correction baffle 5), a plurality of arc segments close to phi 0 degrees and phi 180 degrees on each ring belt can be preferably deleted so as to facilitate manufacturing of the correction baffle 5 and actual installation, calculation and blocking should start from the outermost ring of the turntable 2 (the outermost ring is not corrected), then, the inner ring is gradually pushed step by step until all calculation work is completed, according to the calculation result, a corrected film thickness graph can be obtained, as shown in fig. 8 to 9, the film thickness uniformity of two evaporation materials reaches a high level.
Then, the shape of the correction baffle 5 can be drawn according to the calculation result, as shown in fig. 10 to 11, a distribution diagram of a plurality of annular zones can be drawn according to the equal scale size of the turntable 2, and an equally divided angle ray can be drawn in the distribution diagram according to the equally divided central angle; then, calculating a plurality of region boundary points needing the block, proportionally marking the region boundary points on the ring belt distribution diagram, and connecting the region boundary points to obtain a closed graph, namely the shape of the theoretical correction baffle 5 (shown in fig. 11).
The theoretically obtained correction baffle 5 is directly arranged on the rotary table 2, and the position of the actually installed correction baffle 5 should be below the theoretically obtained correction baffle 5, and a safe movement gap must be reserved between the two, therefore, the theoretically obtained correction baffle 5 must be reduced and corrected, as shown in fig. 5, if the distance between the installation position of the actually obtained correction baffle 5 and the bottom of the rotary table 2 is set as δ, the actually installed correction baffle 5 should be the reduction of the theoretically obtained correction baffle 5, that is, the reduction size of the actually obtained correction baffle 5 is δ · tg α, where α is the angle between the line connecting the evaporation center and the edge of the theoretically obtained correction baffle 5 and the vertical normal of the evaporation center, since the evaporation centers of the two evaporation mechanisms 6 are different, only one balance can be obtained between the two evaporation mechanisms, and α having a large direct influence is considered (if the evaporation mechanism 6 is close to, α of the evaporation mechanism 6 is considered more, giving that α more weight), but in any case introducing errors, it is necessary to reduce the mounting clearance δ as much as possible, as the operation of the turntable 2 allows, in order to reduce the errors and improve the uniformity, while in practice it is realistic to improve the uniformity to within 1%, which is completely achievable. In addition, to improve the accuracy, the following aspects can be considered: the first step is the measurement and fitting precision of n, generally n is not less than 3, the film thickness after certain time of evaporation is required to be measured by the rotating disc 2 in a static state, and then the film thickness of the evaporation mechanism 6 under different angles alpha is determined, so that the value of n is deduced; the second step is that the finer the phi and R scores are, the higher the calculation precision is; and the third step is to calculate the precision, correct the installation precision and the correction precision of the baffle 5, and obtain the required precision based on the comprehensive consideration.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (9)

1. A multi-source electron beam evaporation coating device comprises a vacuum cavity, a rotating shaft arranged in the vacuum cavity, a rotating disc arranged on the rotating shaft, a substrate arranged at the bottom of the rotating disc, and an evaporation plane arranged below the rotating disc, and is characterized by also comprising a vertical plate and a correction baffle plate; the vertical plate is vertically arranged below the center of the rotary table and divides the evaporation plane into two parts; a plurality of evaporation mechanisms are arranged in each equally divided evaporation plane, and evaporation materials in the evaporation mechanisms are different; the correction baffle is arranged between the substrate and the plurality of evaporation mechanisms and is used for enabling the film forming thicknesses of the evaporation materials on the substrate to be uniform and the same.
2. The multi-source electron beam evaporation coating device according to claim 1, wherein two evaporation mechanisms are arranged in each equally divided evaporation plane, and the distance between each evaporation mechanism and the projection center of the rotating shaft in the evaporation plane is greater than or equal to two thirds of the radius of the rotating disc.
3. The multi-source electron beam evaporation coating device according to claim 2, wherein an angle between a connecting line of the evaporation mechanism and a projection center of the rotating shaft in the evaporation plane and a projection transverse line of the vertical plate in the evaporation plane is 45 °, and an angle between a connecting line of the evaporation mechanism and a projection center of the rotating shaft in the evaporation plane and a projection transverse line of the vertical plate in the evaporation plane is 135 °.
4. The multi-source electron beam evaporation coating device according to claim 1, wherein the distance between the rotary table and the evaporation plane is greater than or equal to the radius of the rotary table.
5. The multi-source electron beam evaporation coating apparatus according to claim 1, wherein the evaporation mechanism includes a crucible for placing an evaporation material, and an electron gun for emitting an electron beam.
6. A multi-source electron beam evaporation coating film thickness uniformity correction method is characterized by comprising the following steps:
s1: a vertical plate is arranged below the center of an inner rotary disc of the vacuum cavity, so that the evaporation plane is equally divided into two parts by the vertical plate;
s2: two evaporation mechanisms with different evaporation materials are arranged in each equally divided evaporation plane, and an expression T of the film forming thickness of the two evaporation mechanisms in each equally divided evaporation plane at any point on the turntable is written according to the actual configuration condition in the vacuum chamber1And T2；
S3: equally dividing the surface of the rotary table into a plurality of annular bands by taking the center of the rotary table as the circle center according to the T1And T2Respectively calculating the theoretical film thickness value T of the two evaporation mechanisms on each ring belt1RAnd T2R；
S4: respectively drawing T by taking the distance between each zone and the center of the turntable as an X axis and the film thickness on each zone as a Y axis1RAnd T2RAnd observing and determining the minimum film thickness value Tmin；
S5: according to TminCalculating the theoretical position and shape of the correction baffle such that T1R＝T2R＝Tmin；
S6: and (4) according to the distance between the actual installation position of the correction baffle and the bottom of the turntable, reducing and correcting the correction baffle obtained by theoretical calculation in proportion to obtain the required actual correction baffle and installing the actual correction baffle.
7. The multi-source electron beam evaporation coating film thickness uniformity correction method according to claim 6, wherein the S2 comprises the following steps:
s21: the above-mentioned
Figure FDA0002808084980000021
Wherein, K1And K2Respectively is the film coating constant of the two evaporation mechanisms;
n1and n2The evaporation constants are respectively determined by the two evaporation mechanisms according to evaporation materials borne by the two evaporation mechanisms;
L1and L2The lengths of connecting lines between the evaporation centers of the two evaporation mechanisms and any film forming point on the turntable are respectively set;
alpha is the space angle between the connecting line between the evaporation center of the evaporation mechanism and the film forming point on the turntable and the vertical normal of the evaporation center.
8. The multi-source electron beam evaporation coating film thickness uniformity correction method according to claim 7, wherein the step S3 comprises the steps of:
s31: the above-mentioned
Figure FDA0002808084980000031
Figure FDA0002808084980000032
Wherein R is the distance between each annular belt and the center of the turntable, and phi is a central angle taking the center of the turntable as the center of a circle;
s32: dividing the central angle phi into a plurality of equal parts, and further dividing each annular belt into a plurality of arc sections equally;
s33: calculating alpha, and respectively calculating the film thickness of the two evaporation mechanisms on each arc section according to the alpha:
Figure FDA0002808084980000033
Figure FDA0002808084980000034
s34: t obtained based on S33n1And Tn2T in S311RAnd T2RInto cumulative summed form, i.e.
Figure FDA0002808084980000035
Figure FDA0002808084980000036
9. The multi-source electron beam evaporation coating film thickness uniformity correction method according to claim 8, wherein the step S5 comprises the steps of:
s51: two evaporation mechanisms are selected to be close to the film thickness T of a plurality of arc sections with phi of 0 DEG and phi of 180 DEG on each ring beltn1And Tn2And make it equal toZero until the sum sigma T of the film thicknesses of the remaining arc sections of the two evaporation mechanisms on the annular belt respectively1R＝∑T2R＝Tmin；
S52: determining the positions of the film thicknesses of the arc sections equal to zero on each arc section according to S51, wherein the positions are areas needing to be shielded;
s53: drawing a distribution diagram of a plurality of annular bands according to the equal proportion of the rotating disc, and drawing an equally divided angle ray in the distribution diagram according to the equally divided central angle of S32;
s54: and marking a plurality of areas needing to be shielded, which are obtained in the step S52, in the annular distribution diagram drawn in the step S53, and connecting the areas to obtain a closed graph, namely the shape of the theoretical correction baffle.
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