CN111286699A - Baffle plate correction method, film coating method and device - Google Patents

Baffle plate correction method, film coating method and device Download PDF

Info

Publication number
CN111286699A
CN111286699A CN202010222435.6A CN202010222435A CN111286699A CN 111286699 A CN111286699 A CN 111286699A CN 202010222435 A CN202010222435 A CN 202010222435A CN 111286699 A CN111286699 A CN 111286699A
Authority
CN
China
Prior art keywords
shielded
baffle
film thickness
point
corrected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202010222435.6A
Other languages
Chinese (zh)
Other versions
CN111286699B (en
Inventor
罗晋
吴倩
王震
潘峰
罗振飞
杜雅薇
胡建平
卫耀伟
张飞
李树刚
唐明
王健
张清华
刘民才
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laser Fusion Research Center China Academy of Engineering Physics
Original Assignee
Laser Fusion Research Center China Academy of Engineering Physics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laser Fusion Research Center China Academy of Engineering Physics filed Critical Laser Fusion Research Center China Academy of Engineering Physics
Priority to CN202010222435.6A priority Critical patent/CN111286699B/en
Publication of CN111286699A publication Critical patent/CN111286699A/en
Application granted granted Critical
Publication of CN111286699B publication Critical patent/CN111286699B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The application provides a baffle plate correction method, a coating method and a device, which are used for correcting the shape of a baffle plate in a plane planetary type rotary coating process, and the method comprises the following steps: the method comprises the steps of obtaining coating tracks of a plurality of points to be shielded on a film element to be coated, obtaining an original film thickness corresponding to each point to be shielded, and obtaining shielding angles corresponding to the plurality of points to be shielded in a baffle to be corrected; determining the shape of the baffle to be corrected according to the shielding angle; calculating to obtain the actual shielding film thickness corresponding to each baffle to be shielded according to the coating film track corresponding to each baffle to be shielded and the appearance of the baffle to be corrected, wherein the actual shielding film thickness is obtained by simulating the baffle to be corrected to shield; and correcting the baffle to be corrected according to the original film thicknesses of all the points to be shielded and the corresponding actual shielding film thicknesses to obtain the target baffle. The baffle is corrected in a theoretical calculation mode, so that the accuracy and the efficiency of baffle correction can be improved.

Description

Baffle plate correction method, film coating method and device
Technical Field
The application relates to the field of optical coating, in particular to a baffle plate correction method, a coating method and a coating device.
Background
In the process of coating the optical element by using a plane planetary rotation mode, uneven film thickness distribution influences the optical uniformity of the optical element, so that spectral curves of the optical element at different positions drift; changing the optical characteristics and the light intensity distribution of the element; it also affects the intensity modulation of the laser and the balance of the energies in the various paths. The uneven film thickness distribution is improved by mainly arranging a baffle plate between an evaporation source and an optical element to be coated to shield the thick coating part in the optical element so as to control the film thickness uniformity of the whole optical element, and how to arrange the shape of the baffle plate is very important.
The traditional technology is mainly to carry out a plurality of coating experiments on an optical element, and the shape of the baffle plate is adjusted according to the film thickness distribution after each experiment so as to finally obtain the required shape of the baffle plate, and the baffle plate is repeatedly corrected by the experiments, so that the precision and the efficiency of correcting the baffle plate are too low easily.
Disclosure of Invention
The embodiment of the application aims to provide a baffle plate correction method, a coating method and a coating device, which are used for improving the precision of baffle plate correction.
In a first aspect, embodiments provide a baffle plate correction method for correcting a shape of a baffle plate in a planetary plate type spin coating process, the method including: the method comprises the steps of obtaining coating tracks of a plurality of points to be shielded on a film element to be coated, obtaining an original film thickness corresponding to each point to be shielded, and obtaining shielding angles corresponding to the plurality of points to be shielded in a baffle to be corrected; the original film thickness is the film thickness of the point to be shielded for film coating under the condition that the point to be shielded is not shielded; the film coating track is a motion track of the point to be shielded in the process of performing plane planetary rotation film coating, the shielding angle is an arc angle with a preset distance from the center point of the baffle to be corrected, and the preset distance is the distance between the point to be shielded corresponding to the shielding angle and the center point of the element to be coated; determining the shape of the baffle to be corrected according to the shielding angle and the preset distance; calculating to obtain the actual shielding film thickness corresponding to each baffle to be shielded according to the coating film track corresponding to each baffle to be shielded and the appearance of the baffle to be corrected, wherein the actual shielding film thickness is obtained by simulating the baffle to be corrected to shield; and correcting the baffle to be corrected according to the original film thicknesses of all the points to be shielded and the corresponding actual shielding film thicknesses to obtain the target baffle.
According to the embodiment of the application, the film thickness actually shielded by the baffle is calculated according to the film coating track of the film element to be coated and the appearance of the baffle to be corrected, and the baffle is corrected according to the original film thicknesses of the points to be shielded and the corresponding actual shielded film thicknesses. Therefore, the baffle is corrected in a theoretical calculation mode, and the accuracy and the efficiency of the baffle in the correction process can be improved.
In an optional embodiment, the modifying the baffle to be modified according to the original film thicknesses of all the points to be masked and the corresponding actual mask film thicknesses to obtain a target baffle includes: acquiring an original film thickness and an actual shielding film thickness corresponding to a preset point of a film element to be plated; processing the original film thickness of the preset point and the corresponding actual shielding film thickness by using a pre-established film thickness calculation model, and calculating to obtain the actual film thickness corresponding to the preset point; processing the original film thickness of each point to be shielded and the corresponding actual shielding film thickness by using a pre-established film thickness calculation model, and calculating to obtain the actual film thickness corresponding to the point to be shielded; analyzing the actual film thickness of each point to be shielded through a pre-established film thickness distribution model according to the actual film thickness of the preset point to obtain an actual film thickness distribution theoretical value corresponding to the point to be shielded, wherein the actual film thickness distribution theoretical value is used for representing the difference between the film thickness of the point to be shielded and the film thickness of the preset point under the shielding of the baffle to be corrected; and correcting the baffle to be corrected according to the actual film thickness distribution theoretical value corresponding to all the points to be shielded.
According to the embodiment of the application, the actual film thickness of the point to be coated and the preset point can be obtained according to the pre-established film thickness calculation model, the actual film thickness distribution theoretical value of the baffle after being corrected is obtained through calculation according to the film thickness distribution model, the film thickness distribution control effect of the baffle to be corrected is evaluated, the baffle to be corrected is corrected according to the evaluation condition, the reference basis in the correction process is more accurate, and the correction precision of the baffle to be corrected is improved.
In an optional embodiment, the modifying the baffle to be modified according to the actual film thickness distribution theoretical values corresponding to all the points to be shielded includes: and if the actual film thickness distribution theoretical value corresponding to the baffle to be corrected is not equal to the preset threshold, correcting the shielding angle corresponding to the baffle to be corrected on the baffle to be corrected according to the difference between the actual film thickness distribution theoretical value and the preset threshold.
According to the embodiment of the application, the range of the baffle to be corrected is rapidly determined by setting the preset threshold of the theoretical value of the actual film thickness distribution, so that the efficiency of correcting the baffle to be corrected is improved.
In an optional embodiment, the modifying the baffle to be modified according to the original film thicknesses of all the points to be masked and the corresponding actual mask film thicknesses to obtain a target baffle includes: calculating to obtain the actual film thickness of each point to be shielded according to the original film thickness of each point to be shielded and the corresponding actual shielding film thickness; and correcting the baffle to be corrected according to the comparison result of the actual film thickness between any two points to be shielded in the points to be shielded to obtain the target baffle.
According to the embodiment of the application, the film thickness distribution effect of the film element to be plated after film coating is represented by calculating the comparison result of the actual film thickness between any two points to be shielded under the shielding of the baffle to be corrected, so that the baffle to be corrected can be corrected according to the actual comparison result, and the correction precision of the baffle to be corrected is improved.
In an optional embodiment, the obtaining of the shielding angle corresponding to a plurality of to-be-shielded points in the to-be-corrected baffle includes: obtaining the minimum original film thickness of a film element to be plated; calculating to obtain the initial shielding film thickness corresponding to each point to be shielded according to the initial film thickness of each point to be shielded and the minimum initial film thickness; and calculating to obtain a shielding angle corresponding to the to-be-shielded point in the baffle to be corrected according to the original film thickness of each to-be-shielded point and the initial shielding film thickness.
According to the embodiment of the application, the initial shielding angle of the baffle to be corrected with good shielding effect can be obtained through calculation, and the correction efficiency of the baffle to be corrected is improved.
In an optional embodiment, the obtaining a film coating track of a plurality of points to be blocked on a film element to be coated includes: the method comprises the steps of obtaining motion information of a film element to be coated, obtaining position information of a plurality of points to be shielded in the film element to be coated, and obtaining position information of an evaporation source; and calculating to obtain the coating track of each point to be shielded according to the motion information, the position information of each point to be shielded and the position information of the evaporation source.
According to the embodiment of the application, the coating track of the point to be shielded is obtained in a calculation mode, so that the original film thickness of the point to be shielded can be accurately obtained, and an accurate parameter basis is provided for subsequent baffle correction.
In a second aspect, an embodiment provides a plating method, including: assembling a film element to be coated on a coating position of a coating machine, wherein the coating machine comprises an evaporation source and a target baffle plate, the target baffle plate is arranged between the evaporation source and the coating position, and the target baffle plate is obtained by the baffle plate correction method in any one of the previous embodiments; and performing plane planetary rotation on the coating position of the coating machine around the central axis of the coating machine, and performing evaporation coating on the film element to be coated by using an evaporation source.
In the evaporation coating process, the target baffle obtained by the baffle correction method is used for shielding the element to be coated, so that the film thickness distribution on the element to be coated obtained after evaporation coating is uniform, and the optical uniformity of the element after coating is ensured.
In a third aspect, an embodiment provides a baffle correction device, including: the acquisition module is used for acquiring coating tracks of a plurality of points to be shielded on a film element to be coated, acquiring an original film thickness corresponding to each point to be shielded, and acquiring shielding angles corresponding to the plurality of points to be shielded in the baffle to be corrected; the original film thickness is the film thickness of the point to be shielded for film coating under the condition that the point to be shielded is not shielded; the film coating track is a motion track of the point to be shielded in the process of performing plane planetary rotation film coating, the shielding angle is an arc angle with a preset distance from the center point of the baffle to be corrected, and the preset distance is the distance between the point to be shielded corresponding to the shielding angle and the center point of the element to be coated; the shape determining module is used for determining the shape of the baffle to be corrected according to the shielding angle and the preset distance, and the calculating module is used for calculating the actual shielding film thickness corresponding to each baffle to be shielded according to the coating track corresponding to each baffle to be shielded and the shape of the baffle to be corrected, wherein the actual shielding film thickness is obtained by simulating the shielding of the baffle to be corrected; and the correction module is used for correcting the baffle to be corrected according to the original film thicknesses of all the points to be shielded and the corresponding actual shielding film thicknesses to obtain the target baffle.
According to the embodiment of the application, the film thickness actually shielded by the baffle is calculated through the calculation module according to the film coating track of the element to be coated and the appearance of the baffle to be corrected, and the baffle is corrected through the correction module according to the original film thicknesses of the points to be shielded and the corresponding actual shielding film thicknesses. Therefore, the baffle is corrected in a theoretical calculation mode, and the accuracy and the efficiency of the baffle in the correction process can be improved.
In a fourth aspect, an embodiment of the present application provides an electronic device, including: the system comprises a processor, a memory and a bus, wherein the processor and the memory are communicated with each other through the bus; the memory stores program instructions executable by the processor, the processor being capable of executing the method of any one of the preceding embodiments when invoked by the processor.
In a fifth aspect, embodiments of the present application provide a non-transitory computer-readable storage medium storing computer instructions that cause the computer to perform the method according to any one of the preceding embodiments.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and that those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
Fig. 1 is a schematic cross-sectional structural view of a coating machine according to an embodiment of the present disclosure;
FIG. 2 is a schematic top view of a planetary planar coating according to an embodiment of the present disclosure;
fig. 3 is a schematic flow chart of a baffle correction method according to an embodiment of the present application;
FIG. 4 is a schematic flow chart of a coating method according to an embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of a baffle correcting device according to an embodiment of the present application;
fig. 6 is a block diagram of an electronic device applicable to the embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application.
Fig. 1 is a schematic cross-sectional structural diagram of a coater 100 according to an embodiment of the present disclosure, where as shown in the drawing, the coater 100 includes: the coating device comprises a coating position 110 and an evaporation source 120, wherein the coating position 110 is arranged at the top of the coating machine 100, a plane where the coating position 110 is located forms a first preset angle with a horizontal plane so as to uniformly coat a component 200 to be coated in the coating machine 100, and the coating position 110 is used for placing the component 200 to be coated; an evaporation source 120 is disposed at the bottom of the coater 100, and the evaporation source 120 is used for evaporating the coating material, so that the evaporated material can be condensed into a film on the surface of the element 200 to be coated.
Meanwhile, a plurality of evaporation sources 120 of different materials may be provided in the film plating machine 100, and the film element 200 to be plated may be plated by evaporation of different materials during the film plating process. The specific type and number of the evaporation sources 120 and the setting position can be adjusted according to the actual type of the coating machine.
In the process of planar planetary rotary coating of the component 200 to be coated, the component 200 to be coated may be mounted on the coating position 110 of the coating machine 100, and the coating position 110 rotates around the central point of the coating position 110 while revolving around the central axis of the coating machine 100. The coating can be performed by the planetary rotation in a plane to a certain extent so that the evaporated coating material can be attached to and form a uniform thin film on the member to be coated 200.
The film element 200 to be plated can be an optical element, a metal substrate, or other devices requiring film plating. The type of the film element 200 to be plated is not limited, and can be adjusted according to the actual plating requirement. The film element 200 to be coated can be a large-aperture optical element, and a single large-aperture optical element can be arranged on the coating position 110 for coating. The film element 200 to be plated can also be a small-caliber optical element, and a plurality of small-caliber optical elements can be correspondingly arranged on the film plating position 110 for film plating. The parameters of the specific caliber of the film element 200 to be plated are not limited, and can be adjusted according to the actual plating requirement. The film element 200 to be plated will be described as a large-diameter optical element.
In the process of coating, the thickness uniformity of the film becomes more difficult to control along with the increase of the aperture of the coated element, and the situation that the edge film thickness and the middle film thickness of the coated element are small and large under the common situation according to the principle of evaporation coating is that the thickness of the edge film is small and the thickness of the middle film is large. Generally, the film thickness distribution of the coating element is improved by using the shielding baffle 130, that is, the baffle 130 is placed between the evaporation source 120 and the element 200 to be coated, and the deposition condition of the coating film material from the evaporation source 120 on the element 200 to be coated is changed by the baffle 130, so as to achieve the purpose of correcting the uniformity of the film thickness.
Fig. 2 is a schematic top view illustrating a planetary planar coating according to an embodiment of the present disclosure, wherein during the planetary planar coating of the component 200 to be coated, the coating station 110 revolves counterclockwise around the central axis of the coating machine 100 and simultaneously rotates counterclockwise around the central point of the coating station 110. The position of the baffle 130 is fixed in the film coating process, and the film thickness uniformity of the element 200 to be coated in the film coating process can be controlled by the shielding of the baffle 130 on the film material and the rotation of the element 200 to be coated. Thus, the shape of the baffle 130 is particularly important for controlling the uniformity of film thickness during the coating process.
The baffles 130 are uniformly arranged in the coater 100 in a circumferential shape, and a plurality of baffles 130 may be arranged in the coater 100 in a circumferential shape, and the adjacent baffles 130 are spaced at the same angle. For example, three baffles 130 are provided in the coater 100, with each baffle 130 being spaced 120 apart. The specific number and arrangement of the baffles 130 can be limited according to actual shielding requirements.
Fig. 3 is a schematic flow chart of a baffle plate correction method for correcting the shape of a baffle plate in a planetary planar spin coating process according to an embodiment of the present application, the method including:
step 310: the method comprises the steps of obtaining coating tracks of a plurality of points to be shielded on a film element to be coated, obtaining the original film thickness corresponding to each point to be shielded, and obtaining shielding angles corresponding to the plurality of points to be shielded in a baffle to be corrected.
The original film thickness is the film thickness of the point to be shielded for film coating under the condition that the point to be shielded is not shielded; the coating track is a motion track of the to-be-shielded point in a process of performing planar planetary rotary coating, the shielding angle is an arc angle with a preset distance from the center point of the to-be-corrected baffle plate, the preset distance is a distance between the to-be-shielded point corresponding to the shielding angle and the center point of the to-be-coated element, as shown in fig. 2, if the distance between the to-be-shielded point P and the center point O of the to-be-coated element corresponding to the shielding angle is a, namely the preset distance a, the shielding angle corresponding to the to-be-shielded point P is an angle σ, and the angle σ is an arc angle with the preset distance a from the center point O' of the to-be-corrected baffle.
Furthermore, the obtained multiple points to be shielded can comprise a central point of the element to be coated or a point on the edge of the element to be coated, multiple sampling points on any radius of the element to be coated can be selected as the points to be shielded, and multiple sampling points on multiple radii of the element to be coated can be selected as the points to be shielded. The selection of the specific point to be shielded is not limited, and can be adjusted according to actual requirements.
For the shielding angles corresponding to the shielding points to be corrected on the baffle plate, one shielding point can correspond to one shielding angle, and a plurality of shielding points to be separated from the central point of the film coating element at the same distance can also correspond to the same shielding angle. For example, if a plurality of sampling points on one radius are selected as the points to be shielded, one point to be shielded corresponds to one shielding angle, and if a plurality of sampling points on a plurality of radii are selected as the points to be shielded, a plurality of points to be shielded having the same distance with the central point of the film plating element may also correspond to the same shielding angle.
It should be noted that the film plating locus, the original film thickness and the corresponding shielding angle of the point to be shielded can be obtained by simulating or calculating the planar planetary rotary film plating process of the film component to be plated, and the data acquisition method is not limited and can be adjusted according to actual requirements.
With continuing reference to fig. 3, the method further comprises:
step 320: and determining the appearance of the baffle to be corrected according to the shielding angle and the preset distance.
The shielding angle is a shape parameter of the baffle to be corrected, and the overall shape of the baffle to be corrected can be quickly determined according to the shielding angle and the preset distance. Moreover, the shielding angles of the baffle to be corrected are distributed symmetrically relative to the central point of the baffle, and the shielding angles with the same distance with the central point of the baffle to be corrected have the same size.
Step 330: and calculating to obtain the actual shielding film thickness corresponding to each to-be-shielded point according to the coating film track corresponding to each to-be-shielded point and the appearance of the to-be-corrected baffle, wherein the actual shielding film thickness is obtained after the to-be-corrected baffle is simulated to shield.
The position of the baffle is fixed in the film coating machine, and the film element to be coated moves in the film coating machine according to the coating track. Therefore, the shielding process of the film thickness of the element to be coated by the baffle is shielding of the coating track of the element to be coated by the baffle, namely cutting the part of the coating track shielded by the baffle, which is the so-called track cutting technology. Can cut out the technique through the orbit, according to waiting to shelter from the coating film orbit that corresponds and wait to revise the appearance of baffle promptly, calculate on the baffle and wait to shelter from the corresponding actual membrane thickness that shelters from, a plurality of actual membrane thicknesses that shelter from that correspond can be used for revising the baffle.
Step 340: and correcting the baffle to be corrected according to the original film thicknesses of all the points to be shielded and the corresponding actual shielding film thicknesses to obtain the target baffle.
Therefore, after the original film thicknesses of all the points to be shielded and the corresponding actual shielding film thicknesses are obtained, the actual film thicknesses of the points to be shielded after the baffle is shielded can be obtained, and then the appearance of the baffle to be corrected is corrected according to the actual film thicknesses. Compared with the traditional method of correcting the appearance of the baffle plate in a repeated experiment mode, the method and the device can definitely obtain the correction basis of the baffle plate to be corrected in a theoretical calculation mode, so that the accuracy and the efficiency of correcting the baffle plate are improved.
As an embodiment of the present application, the step 310 may specifically include: the method comprises the steps of obtaining motion information of a film element to be coated, obtaining position information of a plurality of points to be shielded in the film element to be coated, and obtaining position information of an evaporation source; and calculating to obtain the coating track of each point to be shielded according to the motion information, the position information of each point to be shielded and the position information of the evaporation source.
The motion information of the element to be coated comprises the rotation speed omega of the element to be coated around the central axis of the coating machine, the position information of a plurality of points to be shielded in the element to be coated can comprise the distance rho between the point to be shielded and the central point of the element to be coated, the distance R between the element to be coated and the central axis of the coating machine, and the inclination angle epsilon of the element to be coated, wherein the inclination angle is the included angle between the plane of the element to be coated and the horizontal plane. Meanwhile, the position information of the evaporation source may specifically include a height difference H between the central point of the film element to be coated and the evaporation source. The specific type and the number of the data can be adjusted according to the type of a film plating machine used in the actual film plating process.
Therefore, the specific motion process of the film element to be coated in the coating machine, namely the coating track, can be determined according to the data. The intersection point of the central axis of the film coating machine and the horizontal plane where the evaporation source is located is used as an original point, the horizontal plane is used as an xy plane, the central axis of the film coating machine is used as a z axis, an xyz coordinate system is established, and a film coating track corresponding to each point to be shielded can be expressed as follows in the xyz coordinate system:
Figure BDA0002425885490000111
wherein [ x (wt), y (wt), z (wt)]Is a coating track corresponding to the point to be shielded,can also be understood as the coordinate of the point to be shielded at the time t, R is the distance between the central point of the film element to be coated and the central axis of the coating machine, rho is the distance between the point to be shielded and the central point of the film element to be coated, NsThe number of revolution gears of the film coating machine is NpAs for the number of spin gears of the film coating machine,. epsilon.is the inclination angle of the film element to be coated, H is the height difference between the central point of the film element to be coated and the evaporation source, α is the initial position angle of the film element to be coated in the film coating machine at the time 0, β is the initial position angle of the film element to be coated in the film element at the time 0, with continued reference to FIG. 2, angles α and β are shown in FIG. 2, angle α is the initial position angle of the film element B in the film coating machine at the time 0, and angle β is the initial position angle of the film point P' to be coated on the film element B to be coated in the film element B at the time 0.
It should be noted that the data representing the coating trajectory is determined by simulating the working process of the coating machine, and the specific acquisition mode of the data is not limited and can be adjusted according to the actual baffle correction requirement. In addition, the specific establishment mode of the xyz coordinate system is not limited, and can be selected according to actual requirements.
Meanwhile, according to the classical film thickness calculation theory in evaporation coating, the film thickness d of any point on the coating element can be expressed as:
Figure BDA0002425885490000121
wherein d is the film thickness of any point on the film coating element, m is the total mass of the film coating material, mu is the film layer density corresponding to the point, n is a parameter determined according to the evaporation characteristic of the film coating material,
Figure BDA0002425885490000123
the deposition angle corresponding to the point is the included angle between the connecting line of the evaporation source and the point and the normal line of the evaporation source on the horizontal plane, theta is the evaporation angle corresponding to the point, the evaporation angle is the included angle between the connecting line of the evaporation source and the point and the normal line of the point on the film coating element, and r is the distance between the point and the evaporation source.
According to the expression of the film thickness dAs can be seen, the main factors influencing the film thickness of the coated element are r,
Figure BDA0002425885490000122
Three parameters of theta. The three parameters can be represented by coating tracks corresponding to the points to be shielded on the film element to be coated, so that the original film thickness of the points to be shielded on the film element to be coated can be obtained by calculating a film thickness calculation model, and the film thickness calculation model can be represented as:
Figure BDA0002425885490000131
wherein (x)p，yp，zp) Is the dynamically changed coordinate of the point to be shielded on the element to be plated with film (x)s，ys，zs) Is the coordinate of the evaporation source, and t is the film coating time of the film element to be coated.
As another embodiment of the present application, the step 310 may further specifically include: obtaining the minimum original film thickness of a film element to be plated; calculating to obtain the initial shielding film thickness corresponding to each point to be shielded according to the initial film thickness of each point to be shielded and the minimum initial film thickness; and calculating to obtain a shielding angle corresponding to the to-be-shielded point in the baffle to be corrected according to the original film thickness of each to-be-shielded point and the initial shielding film thickness.
In order to accelerate the correction of the baffle to be corrected, the shape of the initial baffle with better shielding effect can be preset, and then the shape of the baffle is further corrected on the basis of the initial baffle with better shielding effect, so that the correction efficiency can be improved. The setting of the initial baffle is determined by a shielding angle sigma corresponding to a point P to be shielded and a preset distance rho between the point P to be shielded and the element center point. The ratio of the shielding angle sigma corresponding to the point P to be shielded to the unshielded circumference 2 pi is equal to the thickness d of the initial shielding film corresponding to the point P to be shieldedp-dminThe thickness d of the unshielded original film corresponding to the point P to be shieldedpThe ratio of (a) to (b). Therefore, the shielding angle and the preset distance corresponding to each shielding point can be obtained, namely the initial baffle plate appearance can be obtained. In the initial baffle plateThe occlusion angle σ for an occlusion point may be expressed as:
Figure BDA0002425885490000132
wherein, the sigma is a shielding angle corresponding to the point to be shielded; dp-dminThe initial shielding film thickness corresponding to the point to be shielded; dpThe original film thickness corresponding to the point to be shielded; dminThe minimum original film thickness corresponding to the element to be plated is the edge film thickness of the element to be plated under the condition without a baffle plate according to the characteristic of plating by plane planetary rotation, and the middle film thickness is large, so that the minimum original film thickness is generally the original film thickness of the edge point of the element to be plated. z is a radical ofminThe z-axis coordinate of the point to be shielded corresponding to the minimum original film thickness is dynamically changed; r isminThe distance between the point to be shielded corresponding to the minimum original coating film and the evaporation source is dynamically changed; z is a radical ofpIs a z-axis coordinate of the point to be shielded, which is dynamically changed; r ispThe distance between the point to be shielded and the evaporation source is dynamically changed; z is a radical ofsIs the coordinate of the evaporation source on the z-axis. The specific value of the minimum original film thickness can be adjusted according to the actually selected edge point of the film element to be plated.
For example, if a plurality of sampling points on a radius are selected as the points to be shielded, one point to be shielded corresponds to one shielding angle, the shielding angle corresponding to each point to be shielded can be calculated according to the formula, and then based on the symmetry of the baffle, the appearance of the initial baffle can be determined by using all the shielding angles.
If a plurality of sampling points on a plurality of radii are selected as points to be shielded, a plurality of points to be shielded with the same distance with the central point of the film coating element can also correspond to the same shielding angle. The shielding angles corresponding to each shielding point to be obtained can be calculated by utilizing the formula respectively according to a plurality of shielding points to be in the same distance with the central point of the film coating element, and then the average value of the shielding angles is obtained to be used as a plurality of shielding angles corresponding to the shielding points to be in the same distance with the central point of the film coating element. And based on the symmetry of the baffle, the appearance of the initial baffle can be determined by using all shielding angles.
As an embodiment of the present application, the step 340 may specifically include: acquiring an original film thickness and an actual shielding film thickness corresponding to a preset point of a film element to be plated; processing the original film thickness of the preset point and the corresponding actual shielding film thickness by using a pre-established film thickness calculation model, and calculating to obtain the actual film thickness corresponding to the preset point; processing the original film thickness of each point to be shielded and the corresponding actual shielding film thickness by using a pre-established film thickness calculation model, and calculating to obtain the actual film thickness corresponding to the point to be shielded; analyzing the actual film thickness of each point to be shielded through a pre-established film thickness distribution model according to the actual film thickness of the preset point to obtain an actual film thickness distribution theoretical value corresponding to the point to be shielded, wherein the actual film thickness distribution theoretical value is used for representing the difference between the film thickness of the point to be shielded and the film thickness of the preset point under the shielding of the baffle to be corrected; and correcting the baffle to be corrected according to the actual film thickness distribution theoretical value corresponding to all the points to be shielded.
In order to improve the correction precision of the baffle, whether the baffle needs to be corrected or not can be accurately judged by quantifying the shielding effect of the baffle. Therefore, the actual film thickness corresponding to the preset point and the actual film thickness of the point to be shielded can be calculated through the film thickness calculation model, and then the shielding effect of the baffle to be corrected is judged by measuring the difference between the film thickness of the point to be shielded under the shielding of the baffle to be corrected and the film thickness of the preset point according to the actual film thickness distribution theoretical value. Wherein, the film thickness distribution model is:
Figure BDA0002425885490000151
wherein c is an actual film thickness distribution theoretical value corresponding to the point to be shielded; dp' is the film thickness of the point to be shielded under the shielding of the baffle to be corrected; d0' is the film thickness corresponding to the preset point under the shielding of the baffle to be corrected. (x)p，yp，zp) As the coordinates of the point to be occluded, (x)s，ys，zs) To evaporateCoordinates of the source, (x)0，y0，z0) And presetting coordinates of points for the element to be coated. sh (x)p，yp，zp) Sh (x) is a coating track of the point to be shielded and shielded by the baffle to be corrected0，y0，z0) Presetting a coating track for a component to be coated, wherein the coating track is shielded by a baffle to be corrected; f (sh (x)p，yp，zp)，(xs，ys，zs) F (sh (x)) is the actual shielding film thickness corresponding to the point to be shielded0，y0，z0)，(xs，ys，zs) Is the actual barrier film thickness corresponding to the preset point. The preset point of the element to be plated can be the central point of the element to be plated, the edge point of the element to be plated, or any fixed point on the element to be plated, the selection of the preset point of the element to be plated is not limited, and the preset point can be adjusted according to actual requirements.
Therefore, the shielding effect of the baffle to be corrected on the point to be shielded can be measured through the actual film thickness distribution theoretical value c, and the baffle to be corrected is corrected according to the actual film thickness distribution theoretical value c corresponding to all the points to be shielded. The correction precision can be further improved by using the high-accuracy actual film thickness distribution theoretical value c as a correction basis.
It can also be stated that the calculation method of the theoretical value of film thickness distribution can also be used for evaluating the film thickness distribution of the coating element which is not shielded, and the specific application scene of the theoretical value of film thickness distribution can be selected according to the actual requirement.
It is worth to be noted that, based on the track cutting technology, the coating track sh (x) of the to-be-shielded point shielded by the to-be-corrected baffle can be determined according to the coating track corresponding to the to-be-shielded point on the to-be-corrected baffle and the appearance of the bafflep，yp，zp) Namely: according to the shape of the baffle, determining the coating track passing through the baffle to be corrected as the coating track sh (x) of the point to be shielded and shielded by the baffle to be correctedp，yp，zp). Similarly, the coating locus sh (x) of the central point of the element to be coated which is shielded by the baffle to be corrected can also be determined0，y0，z0) And will not be described herein.
After the coating track of the point to be shielded, which is shielded by the baffle to be corrected, is obtained through calculation, the calculation process of determining the actual shielding film thickness corresponding to the point to be shielded is similar to the calculation process of determining the original film thickness of the point to be shielded according to the coating track of the point to be shielded on the film element to be coated, and the description is omitted here. Similarly, the calculation process of determining the actual shielding film thickness corresponding to the preset point of the element to be coated is not repeated.
On the basis of the above embodiment, the correcting the baffle to be corrected according to the actual film thickness distribution theoretical value corresponding to all the points to be shielded includes: and if the actual film thickness distribution theoretical value corresponding to the baffle to be corrected is not equal to the preset threshold, correcting the shielding angle corresponding to the baffle to be corrected on the baffle to be corrected according to the difference between the actual film thickness distribution theoretical value and the preset threshold.
For example, assuming that the preset threshold is 1 and the preset point is the central point of the element to be coated, if the calculated actual film thickness distribution theoretical value corresponding to the point P to be shielded is 1.4, it represents that the film thickness corresponding to the point P to be shielded under the shielding of the baffle to be corrected is greater than the film thickness corresponding to the central point Q of the element to be coated, the shielding angle corresponding to the point P to be shielded in the baffle to be corrected can be increased, or the shielding angle corresponding to the central point Q of the element to be coated in the baffle to be corrected can be decreased. If the calculated theoretical value of the film thickness distribution corresponding to the point P to be shielded is 0.8, which represents that the film thickness corresponding to the point P to be shielded under the shielding of the baffle to be corrected is smaller than the film thickness corresponding to the central point Q of the element to be plated, the shielding angle corresponding to the point P to be shielded in the baffle to be corrected can be reduced, or the shielding angle corresponding to the central point Q of the element to be plated in the baffle to be corrected can be increased. The specific data of the preset threshold and the specific correction mode of the baffle to be corrected are not limited, and can be adjusted according to the actual correction requirement of the baffle.
Therefore, the position of the baffle to be corrected, which needs to be corrected, can be quickly judged by setting the preset threshold value, so that the correction process of the baffle to be corrected is accelerated.
As an embodiment of the present application, the step 340 may also specifically include: calculating to obtain the actual film thickness of each point to be shielded according to the original film thickness of each point to be shielded and the corresponding actual shielding film thickness; and correcting the baffle to be corrected according to the comparison result of the actual film thickness between any two points to be shielded in the points to be shielded to obtain the target baffle.
For example, assuming that a point a to be occluded and a point B to be occluded exist in the plurality of points to be occluded, the calculated actual film thickness of the point a to be occluded is 0.5mm, and the calculated actual film thickness of the point B to be occluded is 0.7 mm. Therefore, the shielding angle of the area corresponding to the point A to be shielded in the baffle to be corrected can be reduced or the shielding angle of the area corresponding to the point B to be shielded in the baffle to be corrected can be increased based on the film thickness uniformity. It is worth explaining that the appearance of the baffle to be corrected can be modified by looking up a film thickness distribution curve trend chart drawn according to the actual film thickness. Therefore, the baffle can be corrected by comparing the actual film thicknesses among a plurality of points to be shielded, and the efficiency of baffle correction is improved. Meanwhile, the value of the actual film thickness corresponding to the shielding point is not limited, and can be adjusted according to the actual coating requirement.
Therefore, the embodiment can accurately determine the position of the baffle to be corrected by comparing the actual film thickness between any two points to be shielded, and improve the correction precision of the baffle.
It should be noted that the baffle correction method described in any of the above embodiments may be iteratively adopted for multiple times to correct the baffle to be corrected for multiple times, so as to obtain the target baffle with higher film thickness uniformity control accuracy.
Fig. 4 is a schematic flow chart of a coating method provided in an embodiment of the present application, and based on the same inventive concept, the embodiment of the present application further provides a coating method, including:
step 410: and assembling a film element to be coated on a coating position of a coating machine, wherein the coating machine comprises an evaporation source and a target baffle plate, the target baffle plate is arranged between the evaporation source and the coating position, and the target baffle plate is obtained by the baffle plate correction method.
Step 420: and performing plane planetary rotation on the coating position of the coating machine around the central axis of the coating machine, and performing evaporation coating on the film element to be coated by using an evaporation source.
In the actual experiment process, the target baffle obtained by the baffle correction method is used, the film thickness distribution of the phi 720mm large-caliber optical element is successfully and stably improved to be within 0.6 percent from 8.406 percent when the baffle correction is not added originally, and the high-efficiency and high-precision uniformity correction of the film thickness distribution of the optical element is realized.
Fig. 5 is a schematic structural diagram of a baffle correction device provided in an embodiment of the present application, and based on the same inventive concept, an embodiment of the present application further provides a baffle correction device 500, including: the obtaining module 510 is configured to obtain coating trajectories of a plurality of points to be blocked on a film element to be coated, obtain an original film thickness corresponding to each point to be blocked, and obtain a blocking angle corresponding to the plurality of points to be blocked in a baffle to be corrected; the original film thickness is the film thickness of the point to be shielded for film coating under the condition that the point to be shielded is not shielded; the film coating track is a motion track of the point to be shielded in the process of performing plane planetary rotation film coating, the shielding angle is an arc angle with a preset distance from the center point of the baffle to be corrected, and the preset distance is the distance between the point to be shielded corresponding to the shielding angle and the center point of the element to be coated; the shape determining module 520 is configured to determine the shape of the baffle to be corrected according to the shielding angle and the preset distance; a calculating module 530, configured to calculate, according to a coating track corresponding to each to-be-shielded point and the shape of the to-be-corrected baffle, an actual shielding film thickness corresponding to the to-be-shielded point, where the actual shielding film thickness is obtained by simulating shielding of the to-be-corrected baffle; and the correcting module 540 is configured to correct the baffle to be corrected according to the original film thicknesses of all the points to be shielded and the corresponding actual shielding film thicknesses, so as to obtain a target baffle.
On the basis of the foregoing embodiment, the modification module 540 is specifically configured to: acquiring an original film thickness and an actual shielding film thickness corresponding to a preset point of a film element to be plated; processing the original film thickness of the preset point and the corresponding actual shielding film thickness by using a pre-established film thickness calculation model, and calculating to obtain the actual film thickness corresponding to the preset point; processing the original film thickness of each point to be shielded and the corresponding actual shielding film thickness by using a pre-established film thickness calculation model, and calculating to obtain the actual film thickness corresponding to the point to be shielded; analyzing the actual film thickness of each point to be shielded through a pre-established film thickness distribution model according to the actual film thickness of the preset point to obtain an actual film thickness distribution theoretical value corresponding to the point to be shielded, wherein the actual film thickness distribution theoretical value is used for representing the difference between the film thickness of the point to be shielded and the film thickness of the preset point under the shielding of the baffle to be corrected; and correcting the baffle to be corrected according to the actual film thickness distribution theoretical value corresponding to all the points to be shielded.
On the basis of the foregoing embodiment, when the actual film thickness distribution theoretical value corresponding to the point to be shielded is not equal to the preset threshold, the modification module 540 is specifically configured to: and correcting the shielding angle corresponding to the to-be-shielded point on the baffle to be corrected according to the difference between the actual film thickness distribution theoretical value and a preset threshold value.
On the basis of the foregoing embodiment, the modification module 540 may also be specifically configured to: calculating to obtain the actual film thickness of each point to be shielded according to the original film thickness of each point to be shielded and the corresponding actual shielding film thickness; and correcting the baffle to be corrected according to the comparison result of the actual film thickness between any two points to be shielded in the points to be shielded to obtain the target baffle.
On the basis of the foregoing embodiment, the obtaining module 510 is specifically configured to: obtaining the minimum original film thickness of a film element to be plated; calculating to obtain the initial shielding film thickness corresponding to each point to be shielded according to the initial film thickness of each point to be shielded and the minimum initial film thickness; and calculating to obtain a shielding angle corresponding to the to-be-shielded point in the baffle to be corrected according to the original film thickness of each to-be-shielded point and the initial shielding film thickness.
On the basis of the foregoing embodiment, the obtaining module 510 may further specifically be configured to: the method comprises the steps of obtaining motion information of a film element to be coated, obtaining position information of a plurality of points to be shielded in the film element to be coated, and obtaining position information of an evaporation source; and calculating to obtain the coating track of each point to be shielded according to the motion information, the position information of each point to be shielded and the position information of the evaporation source.
Referring to fig. 6, fig. 6 is a block diagram illustrating a structure of an electronic device 10 applicable to the embodiment of the present application. The electronic device 10 may include a memory 101, a memory controller 102, a processor 103, a peripheral interface 104, an input-output unit 105, a display unit 107.
The memory 101, the memory controller 102, the processor 103, the peripheral interface 104, the input/output unit 105, and the display unit 107 are electrically connected to each other directly or indirectly to implement data transmission or interaction. For example, the components may be electrically connected to each other via one or more communication buses or signal lines. At least one software or firmware (firmware) is stored in the memory 101 or a software function module solidified in an Operating System (OS). The processor 103 is used to execute executable modules, software functional modules or computer programs stored in the memory 101.
The Memory 101 may be, but is not limited to, a Random Access Memory (RAM), a Read Only Memory (ROM), a Programmable Read-Only Memory (PROM), an Erasable Read-Only Memory (EPROM), an electrically Erasable Read-Only Memory (EEPROM), and the like. The memory 101 is configured to store a program, and the processor 103 executes the program after receiving an execution instruction, and the method disclosed in any of the foregoing embodiments of the present application may be applied to the processor 103, or implemented by the processor 103.
The processor 103 may be an integrated circuit chip having signal processing capabilities. The processor 103 may be a general-purpose processor, and includes a Central Processing Unit (CPU), a Network Processor (NP), and the like; but may also be a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), an off-the-shelf programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components. The various methods, steps, and logic blocks disclosed in the embodiments of the present application may be implemented or performed. A general purpose processor may be a microprocessor or the processor 103 may be any conventional processor or the like.
The peripheral interface 104 couples various input/output devices to the processor 103 as well as to the memory 101. In some embodiments, the peripheral interface 104, the processor 103, and the memory controller 102 may be implemented in a single chip. In other examples, they may be implemented separately from the individual chips.
The input/output unit 105 is used for providing input data to a user to enable the user to interact with the electronic device 10. The input/output unit 105 may be, but is not limited to, a mouse, a keyboard, and the like.
The display unit 107 provides an interactive interface (e.g., a user interface) between the electronic device 10 and a user or for displaying image data to a user reference. In this embodiment, the display unit 107 may be a liquid crystal display or a touch display. In the case of a touch display, the display can be a capacitive touch screen or a resistive touch screen, which supports single-point and multi-point touch operations. Supporting single-point and multi-point touch operations means that the touch display can sense touch operations simultaneously generated from one or more positions on the touch display, and the sensed touch operations are sent to the processor 103 for calculation and processing.
It will be appreciated that the configuration shown in FIG. 6 is merely illustrative and that the electronic device 10 may include more or fewer components than shown in FIG. 6 or may have a different configuration than shown in FIG. 6. The components shown in fig. 6 may be implemented in hardware, software, or a combination thereof.
In summary, the embodiment of the present application provides a baffle plate correction method, a baffle plate coating method and a baffle plate correction device, which can calculate the actual membrane thickness covered by a baffle plate according to the coating track of an element to be coated and the shielding angle of the baffle plate to be corrected, and correct the baffle plate according to the original membrane thicknesses of a plurality of points to be covered and the corresponding actual membrane thicknesses to be covered, so that the baffle plate is corrected in a theoretical calculation manner, and the accuracy of the correction process of the baffle plate can be improved.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other ways. The above-described embodiments of the apparatus are merely illustrative, and for example, the division of the units is only one logical division, and there may be other divisions when actually implemented, and for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection of devices or units through some communication interfaces, and may be in an electrical, mechanical or other form.
In addition, units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
Furthermore, the functional modules in the embodiments of the present application may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.
It should be noted that the functions, if implemented in the form of software functional modules and sold or used as independent products, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present application or portions thereof that substantially contribute to the prior art may be embodied in the form of a software product stored in a storage medium and including instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the method according to the embodiments of the present application. And the aforementioned storage medium includes: various media capable of storing program codes, such as a usb disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk.
In this document, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims (10)

1. A baffle plate correction method for correcting the shape of a baffle plate in a planetary planar spin coating process, comprising:
the method comprises the steps of obtaining coating tracks of a plurality of points to be shielded on a film element to be coated, obtaining an original film thickness corresponding to each point to be shielded, and obtaining shielding angles corresponding to the plurality of points to be shielded in a baffle to be corrected; the original film thickness is the film thickness of the point to be shielded for film coating under the condition that the point to be shielded is not shielded; the film coating track is a motion track of the point to be shielded in a planar planetary rotary film coating process, the shielding angle is an arc angle which is a preset distance away from the center point of the baffle to be corrected, and the preset distance is a distance between the point to be shielded corresponding to the shielding angle and the center point of the element to be coated;
determining the shape of the baffle to be corrected according to the shielding angle and the preset distance;
calculating to obtain the actual shielding film thickness corresponding to each baffle to be shielded according to the coating film track corresponding to each baffle to be shielded and the appearance of the baffle to be corrected, wherein the actual shielding film thickness is obtained by simulating the baffle to be corrected to shield;
and correcting the baffle to be corrected according to the original film thicknesses of all the points to be shielded and the corresponding actual shielding film thicknesses to obtain the target baffle.
2. The baffle plate correction method according to claim 1, wherein the correcting the baffle plate to be corrected according to the original film thicknesses of all the points to be blocked and the corresponding actual blocking film thicknesses to obtain the target baffle plate comprises:
acquiring an original film thickness and an actual shielding film thickness corresponding to a preset point of a film element to be plated;
processing the original film thickness of the preset point and the corresponding actual shielding film thickness by using a pre-established film thickness calculation model, and calculating to obtain the actual film thickness corresponding to the preset point;
processing the original film thickness of each point to be shielded and the corresponding actual shielding film thickness by using a pre-established film thickness calculation model, and calculating to obtain the actual film thickness corresponding to the point to be shielded;
analyzing the actual film thickness of each point to be shielded through a pre-established film thickness distribution model according to the actual film thickness of the preset point to obtain an actual film thickness distribution theoretical value corresponding to the point to be shielded, wherein the actual film thickness distribution theoretical value is used for representing the difference between the film thickness of the point to be shielded and the film thickness of the preset point under the shielding of the baffle to be corrected;
and correcting the baffle to be corrected according to the actual film thickness distribution theoretical value corresponding to all the points to be shielded.
3. The baffle plate correction method according to claim 2, wherein the correcting the baffle plate to be corrected according to the actual film thickness distribution theoretical value corresponding to all the points to be shielded comprises:
and if the actual film thickness distribution theoretical value corresponding to the baffle to be corrected is not equal to the preset threshold, correcting the shielding angle corresponding to the baffle to be corrected on the baffle to be corrected according to the difference between the actual film thickness distribution theoretical value and the preset threshold.
4. The baffle plate correction method according to claim 1, wherein the correcting the baffle plate to be corrected according to the original film thicknesses of all the points to be blocked and the corresponding actual blocking film thicknesses to obtain the target baffle plate comprises:
calculating to obtain the actual film thickness of each point to be shielded according to the original film thickness of each point to be shielded and the corresponding actual shielding film thickness;
and correcting the baffle to be corrected according to the comparison result of the actual film thickness between any two points to be shielded in the points to be shielded to obtain the target baffle.
5. The baffle plate correction method according to claim 1, wherein the obtaining of the shielding angles corresponding to a plurality of to-be-shielded points in the baffle plate to be corrected comprises:
obtaining the minimum original film thickness of a film element to be plated;
calculating to obtain the initial shielding film thickness corresponding to each point to be shielded according to the initial film thickness of each point to be shielded and the minimum initial film thickness;
and calculating to obtain a shielding angle corresponding to the to-be-shielded point in the baffle to be corrected according to the original film thickness of each to-be-shielded point and the initial shielding film thickness.
6. The baffle plate correction method according to claim 1, wherein the obtaining of the coating trajectories of the plurality of points to be blocked on the member to be coated comprises:
the method comprises the steps of obtaining motion information of a film element to be coated, obtaining position information of a plurality of points to be shielded in the film element to be coated, and obtaining position information of an evaporation source;
and calculating to obtain the coating track of each point to be shielded according to the motion information, the position information of each point to be shielded and the position information of the evaporation source.
7. A method of coating, comprising:
assembling a film element to be coated on a coating position of a coating machine, wherein the coating machine comprises an evaporation source and a target baffle plate, the target baffle plate is arranged between the evaporation source and the coating position, and the target baffle plate is obtained by the baffle plate correction method of any one of claims 1-6;
and performing plane planetary rotation on the coating position of the coating machine around the central axis of the coating machine, and performing evaporation coating on the film element to be coated by using an evaporation source.
8. A baffle correction device, comprising:
the acquisition module is used for acquiring coating tracks of a plurality of points to be shielded on a film element to be coated, acquiring an original film thickness corresponding to each point to be shielded, and acquiring shielding angles corresponding to the plurality of points to be shielded in the baffle to be corrected; the original film thickness is the film thickness of the point to be shielded for film coating under the condition that the point to be shielded is not shielded; the film coating track is a motion track of the point to be shielded in the process of performing plane planetary rotation film coating, the shielding angle is an arc angle with a preset distance from the center point of the baffle to be corrected, and the preset distance is the distance between the point to be shielded corresponding to the shielding angle and the center point of the element to be coated;
the shape determining module is used for determining the shape of the baffle to be corrected according to the shielding angle and the preset distance;
the calculation module is used for calculating and obtaining the actual shielding film thickness corresponding to each baffle to be shielded according to the coating track corresponding to each baffle to be shielded and the appearance of the baffle to be corrected, wherein the actual shielding film thickness is obtained by simulating the baffle to be corrected to shield;
and the correction module is used for correcting the baffle to be corrected according to the original film thicknesses of all the points to be shielded and the corresponding actual shielding film thicknesses to obtain the target baffle.
9. An electronic device, comprising: a processor, a memory, and a bus, wherein,
the processor and the memory are communicated with each other through the bus;
the memory stores program instructions executable by the processor, the processor invoking the program instructions to perform the method of any one of claims 1-7.
10. A non-transitory computer-readable storage medium storing computer instructions that cause a computer to perform the method of any one of claims 1-7.
CN202010222435.6A 2020-03-25 2020-03-25 Baffle plate correction method, film coating method and device Active CN111286699B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010222435.6A CN111286699B (en) 2020-03-25 2020-03-25 Baffle plate correction method, film coating method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010222435.6A CN111286699B (en) 2020-03-25 2020-03-25 Baffle plate correction method, film coating method and device

Publications (2)

Publication Number Publication Date
CN111286699A true CN111286699A (en) 2020-06-16
CN111286699B CN111286699B (en) 2022-04-05

Family

ID=71020967

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010222435.6A Active CN111286699B (en) 2020-03-25 2020-03-25 Baffle plate correction method, film coating method and device

Country Status (1)

Country Link
CN (1) CN111286699B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112501562A (en) * 2020-11-30 2021-03-16 深圳恒泰克科技有限公司 Multi-source electron beam evaporation coating device and film thickness uniformity correction method
CN117230416A (en) * 2023-07-12 2023-12-15 中国科学院上海光学精密机械研究所 Baffle design method for correcting film thickness distribution of magnetron sputtering element coating film

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1535185A (en) * 2001-06-01 2004-10-06 Ultra-frequency in microdeposition control system for increasing resolution
CN1718844A (en) * 2005-07-12 2006-01-11 中国科学院上海光学精密机械研究所 Correction method for thickness uniformity of electron beam evaporation coating film
CN102787301A (en) * 2012-07-23 2012-11-21 中国科学院光电技术研究所 Baffle plate design method for controlling film thickness distribution of conical optical element in film-coating planetary system
CN108890449A (en) * 2018-09-07 2018-11-27 中国工程物理研究院激光聚变研究中心 Optical component surface shape modification method and device
US20190025045A1 (en) * 2017-07-24 2019-01-24 Boe Technology Group Co., Ltd. Film thickness test apparatus and method and vapor deposition device
CN109652777A (en) * 2018-12-21 2019-04-19 北京铂阳顶荣光伏科技有限公司 A kind of filming equipment, plating control apparatus and method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1535185A (en) * 2001-06-01 2004-10-06 Ultra-frequency in microdeposition control system for increasing resolution
CN1718844A (en) * 2005-07-12 2006-01-11 中国科学院上海光学精密机械研究所 Correction method for thickness uniformity of electron beam evaporation coating film
CN102787301A (en) * 2012-07-23 2012-11-21 中国科学院光电技术研究所 Baffle plate design method for controlling film thickness distribution of conical optical element in film-coating planetary system
US20190025045A1 (en) * 2017-07-24 2019-01-24 Boe Technology Group Co., Ltd. Film thickness test apparatus and method and vapor deposition device
CN108890449A (en) * 2018-09-07 2018-11-27 中国工程物理研究院激光聚变研究中心 Optical component surface shape modification method and device
CN109652777A (en) * 2018-12-21 2019-04-19 北京铂阳顶荣光伏科技有限公司 A kind of filming equipment, plating control apparatus and method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112501562A (en) * 2020-11-30 2021-03-16 深圳恒泰克科技有限公司 Multi-source electron beam evaporation coating device and film thickness uniformity correction method
CN117230416A (en) * 2023-07-12 2023-12-15 中国科学院上海光学精密机械研究所 Baffle design method for correcting film thickness distribution of magnetron sputtering element coating film
CN117230416B (en) * 2023-07-12 2024-03-01 中国科学院上海光学精密机械研究所 Baffle design method for correcting film thickness distribution of magnetron sputtering element coating film

Also Published As

Publication number Publication date
CN111286699B (en) 2022-04-05

Similar Documents

Publication Publication Date Title
CN111286699B (en) Baffle plate correction method, film coating method and device
Wobbrock et al. An error model for pointing based on Fitts' law
US6524449B1 (en) Method and system for producing sputtered thin films with sub-angstrom thickness uniformity or custom thickness gradients
JP6539142B2 (en) Process error correction when transferring a mask layout onto a mask substrate
AU2017268690A1 (en) Selecting points on an electroanatomical map
CN110525073A (en) Device and method for the screen process press that makes corrections
CN115963710A (en) Overlay error correction method and apparatus, electronic device, and storage medium
CN111349885B (en) Shielding plate determination method, film coating method and device
CN114943774A (en) Temperature compensation calculation method for infrared binocular camera
Cenci et al. Real-time reconstruction of long-lived particles at LHCb using FPGAs
CN112553589A (en) High-stability film monitoring method and film coating device
US7363205B2 (en) Topology simulation system, topology simulation method, and computer product
JPH1185402A (en) Method for controlling pointer and record medium used for the method
TW593725B (en) Coating device and method
CN104878356A (en) Magnetic control sputtering target material magnet placing angle determining method
CN105094439A (en) Acceleration sensor calibration and dip angle calculation method and device of touch screen device
CN109254269A (en) A kind of Airborne Interferometric Synthetic Aperture calibrating method
JP2019155387A (en) Molding condition setting method, molding condition setting device, and molding method
CN112896551A (en) Auxiliary calibration method for installation of aircraft avionics equipment
CN117742531B (en) High-precision multi-touch capacitive touch screen and etching process thereof
CN112884828B (en) Method, system, electronic device and storage medium for monitoring position of shielding element
CN113297911B (en) Positioning error correction method and device based on microphone array and storage medium
CN108320308A (en) A kind of circular-section workpiece localization method, apparatus and system
CN107993273A (en) The computer graphics device and drawing practice of a kind of single-particle Mie scattering properties
JP4034926B2 (en) Focus navigation table creation device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant