CN112490336A - Deep ultraviolet light emitting diode epitaxial structure with electron injection layer and preparation method thereof - Google Patents
Deep ultraviolet light emitting diode epitaxial structure with electron injection layer and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a deep ultraviolet light emitting diode epitaxial structure with an electron injection layer and a preparation method thereof. The structure main body sequentially comprises a substrate, a buffer layer, an N-type semiconductor transmission layer, an electron injection layer, a multi-quantum well layer, a P-type current barrier layer, a P-type semiconductor transmission layer and a P-type heavily doped semiconductor transmission layer along the epitaxial growth direction. The electron injection layer accurately regulates and controls a polarization electric field and a depletion electric field in the N-type AlGaN layer through AIN components and doping concentration, so that the energy of electrons injected into an active region is reduced, the capture capability of a quantum well on the electrons is improved, the performance of a device is greatly improved, the growth difficulty of the material is low, and the repeatability is high.
Description
Technical Field
The invention relates to the technical field of light emitting diode semiconductors, in particular to a deep ultraviolet light emitting diode epitaxial structure with an electron injection layer and a preparation method thereof.
Background
Compared with the traditional deep ultraviolet mercury lamp, the AlGaN-based deep ultraviolet light emitting diode (DUV LED) has the advantages of low working voltage, energy conservation, environmental protection, long service life and the like, so that the AlGaN-based deep ultraviolet light emitting diode (DUV LED) is widely applied to the fields of ultraviolet curing, anti-counterfeiting detection, display communication, medical treatment and health care and the like, and has very wide development prospect and commercial value.
Through the long-term development of over ten years, although AlGaN-based DUV LEDs make important progress in the aspects of epitaxial growth, device processes, and the like, at the present stage, further development of AlGaN-based DUV LEDs still faces bottlenecks of low internal quantum efficiency, low light extraction efficiency, and the like, and further external quantum efficiency of devices is difficult to meet the current requirements. Because TM-mode polarized light of the AlGaN-based DUV LED is dominant, and the light extraction efficiency of the TM-mode polarized light is less than one tenth of that of the TE mode, the improvement space of the external quantum efficiency of the AlGaN-based DUV LED is severely limited. Researchers show that by adopting an ultra-thin quantum well structure, TM mode polarized light in an active region of a DUV LED can be effectively inhibited and TE mode polarized light is dominant, so that the light extraction efficiency of a device is improved, and further the external quantum efficiency of the device is improved [ Kangkai Tian, Chunshung Chu et al. display between active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes enable a reduced TM-polarized emission, J.application.Phys.126, 24599 (2019) ], but electrons have smaller effective mass and higher mobility relative to holes, so that electrons have higher energy in the process of being injected into the active region and are difficult to be captured by the quantum well. And this has greatly reduced the electron concentration in the quantum well to reduce the quantum efficiency in the device, so if use ultra-thin well structure alone, because the active region scope is reduced, then will further influence the active region quantum well to the capture efficiency of electron, reduce interior quantum efficiency, thus restrict the improvement effect of the external quantum efficiency of device. Chinese patent No. CN108538982A, which has been filed by this subject group, discloses an led epitaxial structure, which forms a metal-insulator-semiconductor (MIS) structure by interposing an insulating layer between an N-type electron transport layer and an N-ohmic electrode to reduce schottky barrier and improve electron injection efficiency. However, this method only improves the number of injected electrons, does not improve the electron capturing capability of the quantum well, and has a limited effect. Therefore, to further improve the external quantum efficiency of the device, it is important to ensure the performance improvement effect of the device and improve the electron capture capability of the quantum well, both for the standard deep ultraviolet light emitting diode or for the deep ultraviolet light emitting diode adopting the ultra-thin well structure or the MIS structure. Chinese patent No. CN105895765A, which has been obtained by this group, discloses an led epitaxial structure, in which an electron energy adjustment layer with a relative dielectric constant of 8.5-15.3 is inserted into an N-type electron transport layer to reduce electron energy, and improve the capture efficiency of the active region quantum well for electrons, thereby improving the electron concentration in the quantum well. However, the above prior art involves the alternate growth of materials with different relative dielectric constants, which increases the difficulty of material growth, and the relative dielectric constant adjustment capability is limited.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: a deep ultraviolet light emitting diode epitaxial structure with an electron injection layer and a preparation method thereof are provided. According to the structure, the electron injection layer is introduced between the N-type electron transmission layer and the multiple quantum well layer, the doping concentration is decreased progressively along the growth direction to form a depletion electric field, the polarization electric field is adjusted by adjusting the AlN component of the electron deceleration layer, the directions of the two electric fields are consistent with the movement direction of electrons, so that the electrons are decelerated after passing through the electron injection layer, the energy of the electrons injected into an active area is reduced, the capture capacity of the quantum well on the electrons is improved, the electron concentration in the quantum well is improved, the radiation recombination efficiency is improved, and the quantum efficiency in a device is improved.
The technical scheme adopted by the invention is as follows:
a deep ultraviolet light emitting diode epitaxial structure with an electron injection layer comprises a substrate 101, a buffer layer 102, an N-type semiconductor transmission layer 103, an electron injection layer 104, a multi-quantum well layer 105, a P-type current blocking layer 106, a P-type semiconductor transmission layer 107 and a P-type heavily doped semiconductor transmission layer 108.
Further, the electron injection layer 104 is made of Alx1Ga1-x1N, wherein x1 is 0-1, 0-1-x 1-1, wherein x1 is in the range of 0-1 x 1-1 along [0001]]([000-1]) The direction is continuously or stepwise linearly decreasing (increasing), non-linearly decreasing (increasing), or a combination of both linearly and non-linearly decreasing (increasing).
Further, the substrate 101 is one of sapphire, SiC, Si, AlN, GaN, or quartz glass; the difference of the substrate along the epitaxial growth direction can be classified into a polar plane [0001] substrate or a negative plane [000-1] substrate.
Further, the material of the buffer layer 102 is Alx2Ga1-x2N; wherein x2 is more than or equal to 0 and less than or equal to 1, x2 is more than or equal to 0 and less than or equal to 1, and the thickness is 10-50 nm.
Furthermore, the thickness of the electron deceleration layer is 0.01-1 μm, the doping concentration is continuously or stepwisely linearly decreased, non-linearly decreased or a combination of linearly and non-linearly decreased along the growth direction compared with the doping concentration of the N-type semiconductor transmission layer 103, the doping concentration of the N-type impurity is 1e17～1e19cm-3(ii) a The material of the N-type semiconductor transmission layer 103 is Alx3Ga1-x3N; wherein x3 is more than or equal to 0 and less than or equal to 1, x3 is more than or equal to 0 and less than or equal to 1, and the thickness is 1-5 mu m; the proportion of the area of the exposed part to the total area of the N-type semiconductor transmission layer is 5% -90%, and the thickness range is 1-5 mu m.
Furthermore, the material of the MQW layer 105 is Alx4Ga1-x4N/Alx5Ga1-x5N; wherein x4 is more than or equal to 0 and less than or equal to 1, x4 is more than or equal to 0 and less than or equal to 1, x5 is more than or equal to 0 and less than or equal to 1, 1-x5 is more than or equal to 1, the forbidden bandwidth of the quantum barrier is higher than that of the quantum well, and the number of the quantum wells is more than or equal to 1; quantum well Alx4Ga1-x4N is 0.5-5 nm thick and quantum barrier Alx5Ga1-x5The thickness of N is 3-50 nm.
Further, the P-type current blocking layer (6) is made of Alx6Ga1-x6N; wherein x6 is more than or equal to 0 and less than or equal to 1, x6 is more than or equal to 0 and less than or equal to 1, and the thickness is 10-100 nm.
Further, the material of the P-type semiconductor transmission layer 107 is Alx7Ga1-x7N; wherein x7 is more than or equal to 0 and less than or equal to 1, x7 is more than or equal to 0 and less than or equal to 1, and the thickness is 50-250 nm.
Further, the material of the P-type heavily doped semiconductor transmission layer 108 is Alx8Ga1-x8N; wherein x8 is more than or equal to 0 and less than or equal to 1, 0-x 8 is more than or equal to 1, the material doping is P-type heavy doping, and the thickness is 10-50 nm.
A preparation method of a deep ultraviolet light emitting diode epitaxial structure with an electron injection layer comprises the following steps:
firstly, baking a substrate in an MOCVD (metal organic chemical vapor deposition) or MBE (molecular beam epitaxy) reaction furnace at 950-1400 ℃ to remove foreign matters on the surface of the substrate;
secondly, epitaxially growing GaN, AlN, AlGaN or superlattice serving as a buffer layer on the surface of the substrate treated in the first step in an MOCVD or MBE reaction furnace, wherein the thickness of the buffer layer is 10-50 nm;
step three, epitaxially growing an N-type semiconductor transmission layer on the buffer layer obtained in the step two in an MOCVD or MBE reaction furnace, wherein the thickness of the N-type semiconductor transmission layer is 1-5 microns;
fourthly, in an MOCVD or MBE reaction furnace, epitaxially growing an electron injection layer on the N-type semiconductor transmission layer obtained in the third step, wherein the electron injection layer is made of Alx1Ga1-x1N, wherein x1 is 0-1, 0-1-x 1-1, wherein x1 is in the range of 0-1 x 1-1 along [0001]]([000-1]) The direction is continuously or stepwisely and linearly decreased (increased), non-linearly decreased (increased) or a combination of linear and non-linear decreased (increased), the thickness is 0.01 to 1 μm, the doping concentration is continuously or stepwisely and linearly decreased, non-linearly decreased or a combination of linear and non-linear decreased compared with the doping concentration of the N-type semiconductor transmission layer along the growth direction, the doping concentration of the N-type impurity is 1e17～1e19cm-3；
Fifthly, in MOCVD or MBE reaction furnace, epitaxially growing multiple quantum well on the electron injection layer obtained in the fourth step, wherein quantum barrier Alx5Ga1-x5N is 3-50 nm thick, quantum well Alx4Ga1-x4The thickness of N is 0.5-5 nm, the forbidden bandwidth of the quantum barrier is higher than that of the quantum well, and the number of the quantum wells is more than or equal to 1;
sixthly, epitaxially growing a P-type electron barrier layer Al on the multi-quantum well layer obtained in the fifth step in an MOCVD or MBE reaction furnacex6Ga1-x6N, the thickness is 10-100 nm; then, a P-type semiconductor hole transport layer is grown continuously,the thickness of the material is 50-250 nm; and secondly, continuously growing a P-type heavily doped semiconductor hole transport layer with the thickness of 10-50 nm.
Thus, the deep ultraviolet light emitting diode epitaxial structure with the electron injection layer is prepared.
The above deep ultraviolet light emitting diode epitaxial structure with an electron injection layer can be obtained from the related raw materials by a general way, and the operation process in the preparation method is possessed by the person skilled in the art.
The invention has the beneficial effects that:
(1) according to the deep ultraviolet light emitting diode epitaxial structure with the electron injection layer, the precise regulation and control of the polarization electric field and the built-in electric field in the N-type AlGaN layer are realized by regulating the AIN component and the doping concentration in the electron injection layer, so that the energy of electrons injected into an active region is reduced, and the capture capability of a quantum well on the electrons is improved. Through calculation, the internal electron concentration of the quantum well is improved by 51.1%, and the internal quantum efficiency is improved by 15.1%.
(2) The method of the invention leads the electrons to be decelerated before entering the active region through the electron injection layer, improves the capture capability of the quantum well to the electrons, thereby improving the electron concentration in the quantum well. More importantly, the electron injection layer in the method adopts the same material as the N-type electron transmission layer below the electron injection layer, so that the material growth difficulty is low, and the continuous growth of a subsequent structure is not influenced.
(3) The method has the advantages of strong repeatability, small operation difficulty and low production cost.
Drawings
The invention will be further described with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a standard deep ultraviolet light emitting diode epitaxial wafer in the prior art.
Fig. 2 is a schematic view of an epitaxial structure of a deep ultraviolet light emitting diode with an electron injection layer in the method of the present invention.
Fig. 3 is a schematic diagram of energy bands and interfacial electric fields of an N-type electron transport layer, an electron injection layer and a first quantum barrier of a multiple quantum well layer of a deep ultraviolet light emitting diode having an electron injection layer in example 1.
Fig. 4 is a graph of the electron concentration in the quantum well of the deep ultraviolet light emitting diode with the electron injection layer and the standard deep ultraviolet light emitting diode in example 1.
Fig. 5 is a graph showing the internal quantum efficiency of the deep ultraviolet light emitting diode having the electron injection layer and the standard deep ultraviolet light emitting diode in example 1.
Description of reference numerals:
101-substrate, 102-buffer layer, 103-N-type semiconductor transmission layer, 104-electron injection layer, 105-multi-quantum well layer, 106-P-type current barrier layer, 107-P-type semiconductor transmission layer and 108-P-type heavily doped semiconductor transmission layer.
Detailed Description
The present invention is further described with reference to the following examples and drawings, but the scope of the claims of the present application is not limited thereto.
The embodiment shown in fig. 1 is a standard light emitting diode epitaxial structure in the prior art, that is, the structure along the epitaxial growth direction is as follows: the semiconductor device comprises a substrate 101, a buffer layer 102, an N-type semiconductor transmission layer 103, a multi-quantum well layer 105, a P-type current blocking layer 106, a P-type semiconductor transmission layer 107 and a P-type heavily doped semiconductor transmission layer 108.
Fig. 2 shows an embodiment of an epitaxial structure of a deep ultraviolet light emitting diode with an electron injection layer according to the present invention, which sequentially comprises, along an epitaxial growth direction: the electron injection layer comprises a substrate 101, a buffer layer 102, an N-type semiconductor transmission layer 103, an electron injection layer 104, a multi-quantum well layer 105, a P-type current blocking layer 106, a P-type semiconductor transmission layer 107 and a P-type heavily doped semiconductor transmission layer 108.
Fig. 3 is a schematic diagram of energy bands and interfacial electric field distribution of the N-type electron transport layer 103, the electron injection layer 104 and the first quantum barrier of the multiple quantum well layer 105 of the deep ultraviolet light emitting diode having the electron injection layer in example 1. Wherein E is1Represents the built-in electric field of the depletion region at the interface of the N-type electron transport layer 103 and the electron injection layer 104 in example 1 due to the difference of the N-type doping concentration gradient; e2Representative of the electron injection layer 104Al in example 10.57Ga0.43N/Al0.54Ga0.46Near Al at the N interface0.57Ga0.43A polarization electric field is arranged at the interface at one side of the N layer; e3Representative of the electron injection layer 104Al in example 10.57Ga0.43N/Al0.54Ga0.46Near Al at the N interface0.54Ga0.46And polarizing the electric field at the interface on one side of the N layer. FIG. 3 shows that E1And E2The direction of the electric field is consistent with the movement direction of the electrons, and the electrons can be decelerated after passing through the area; e3Although electrons are accelerated through this region in the opposite direction to the movement of electrons, Al is used for the electrons0.54Ga0.46N layer AlN component ratio Al0.57Ga0.43Low N, higher relative dielectric constant, E3Electric field intensity relative to E2And the size is small, so that the deceleration effect of the electronic deceleration layer is ensured.
The curve shown in fig. 4 indicates that the electron concentration in the quantum well of a deep ultraviolet led with an electron injection layer represented by a dotted line is increased by 51.2% compared to the standard deep ultraviolet led. This is because, in the deep ultraviolet light emitting diode having the electron injection layer in embodiment 1, electrons are "decelerated" after passing through the electron injection layer, energy of the electrons injected into the active region is reduced, and a capture capability of the quantum well for the electrons is improved, thereby increasing an electron concentration in the quantum well.
The curve shown in fig. 5 indicates that the quantum efficiency in a deep ultraviolet light emitting diode with an electron injection layer represented by a dotted line is improved by 15.1% compared to the standard deep ultraviolet light emitting diode. This is due to: in the deep ultraviolet light emitting diode structure having the electron injection layer in embodiment 1, after the electron injection layer is adopted, the electron concentration in the quantum well is increased, and the radiative recombination efficiency is greatly improved, so that the internal quantum efficiency is greatly improved.
Example 1
In this embodiment, the deep ultraviolet light emitting diode epitaxial structure with an electron injection layer sequentially includes, along an epitaxial growth direction, a substrate 101, a buffer layer 102, an N-type semiconductor transmission layer 103, an electron injection layer 104, a multi-quantum well layer 105, a P-type current blocking layer 106, and a P-type current blocking layerA semiconductor transmission layer 107 and a P-type heavily doped semiconductor transmission layer 108; wherein the electron decelerating layer 104 is made of Al0.57Ga0.43N/Al0.54Ga0.46N, doping concentration of 3e17cm-3Each layer is 0.1 μm thick;
in the above, the substrate 101 is a sapphire substrate, and the epitaxial growth of the structure is along [0001]]Direction; the buffer layer 102 is made of AlN and has a thickness of 15 nm; the material of the N-type semiconductor transport layer 103 is Al0.60Ga0.40N, the thickness is 3.8 μm; the MQW layer 105 is made of 5 periods of Al0.45Ga0.55N/Al0.55Ga0.45N layer, wherein quantum barrier Al0.55Ga0.45N is 10nm thick, quantum well Al0.45Ga0.55The thickness of N is set to be 2 nm; the P-type electron blocking layer 106 is made of Al0.65Ga0.35N, the thickness is 10 nm; the P-type semiconductor hole transport layer 107 is made of Al0.40Ga060N, the thickness is 50 nm; the P-type heavily doped semiconductor hole transport layer 108 is made of GaN and has a thickness of 50 nm;
the deep ultraviolet light emitting diode device epitaxial structure with the electron injection layer is prepared by the following steps:
firstly, baking the substrate 101 in an MOCVD reaction furnace at a high temperature of 1300 ℃, and removing foreign matters on the surface of the substrate 101;
secondly, epitaxially growing an AlN buffer layer 102 with the thickness of 15nm on the surface of the substrate 101 treated in the first step in an MOCVD reaction furnace, wherein the growth temperature is 800 ℃, and the air pressure is 80mbar, so that dislocation defects are filtered, and stress generated by lattice mismatch is released;
thirdly, epitaxially growing an N-type semiconductor transmission layer 103 of Al material with a thickness of 3.7 μm on the buffer layer 102 obtained in the second step in an MOCVD reaction furnace0.60Ga0.40N, doping concentration of 3e18cm-3The growth temperature is 1200 ℃, and the air pressure is 30 mbar;
a fourth step of epitaxially growing on the N-type semiconductor transport layer 103 obtained in the third step in an MOCVD reaction furnaceA long electron injection layer 104. Wherein the electron decelerating layer 104 is made of Al0.57Ga0.43N/Al0.54Ga0.46N, doping concentration of 3e17cm-3Each layer is 0.1 μm thick, the growth temperature is 1200 deg.C, and the air pressure is 80 mbar;
fifth, a multiple quantum well layer 105 is epitaxially grown on the electron injection layer 104 obtained in the fourth step in the MOCVD reactor. Wherein, quantum barrier Al0.55Ga0.45N thickness of 10nm, quantum well Al0.45Ga0.55The thickness of N is 2nm, the growth period of the multiple quantum well is 5, the growth temperature is 1150 ℃, and the air pressure is 40 mbar;
and sixthly, epitaxially growing a P-type electron barrier layer 106 on the multi-quantum well layer 105 obtained in the fifth step in an MOCVD reaction furnace, wherein the thickness is 10nm, the growth temperature is 1100 ℃, and the gas pressure is 80 mbar. Continuously growing a P-type semiconductor hole transport layer 107 with the thickness of 50nm and a P-type heavily doped semiconductor hole transport layer 108 with the thickness of 50nm at the growth temperatures of 1100 ℃ and 1000 ℃ and the atmospheric pressures of 50mbar and 100mbar respectively;
thus, the deep ultraviolet light emitting diode epitaxial structure with the electron injection layer is prepared.
The curve shown in fig. 4 indicates that the electron concentration in the quantum well of a deep ultraviolet led with an electron injection layer represented by a dotted line is increased by 51.2% compared to the standard deep ultraviolet led. This is because, in the deep ultraviolet light emitting diode with the electron injection layer in embodiment 1, after electrons pass through the electron injection layer, energy when electrons are injected into the active region is reduced, and a capture capability of the quantum well for electrons is improved, so that an electron concentration in the quantum well is improved, and a radiative recombination efficiency is improved, and finally, as indicated by a curve shown in fig. 5, a deep ultraviolet light emitting diode with an electron injection layer represented by a dotted line has an improved quantum efficiency by 15.1% compared with a standard deep ultraviolet light emitting diode.
Example 2
In this embodiment, the deep ultraviolet light emitting diode epitaxial structure with an electron injection layer sequentially includes a substrate 101, a buffer layer 102, and an N-type semi-layer along an epitaxial growth directionA conductor transmission layer 103, an electron injection layer 104, a multi-quantum well layer 105, a P-type electron barrier layer 106, a P-type semiconductor hole transmission layer 107 and a P-type heavily doped semiconductor hole transmission layer 108; wherein the electron injection layer 104 is made of Al0.58Ga0.42N/Al0.56Ga0.44N/Al0.54Ga0.46N, doping concentration of 8e17cm-3,6e17cm-3And 4e17cm-3Each layer is 0.1 μm thick;
in the above, the substrate 101 is made of sapphire, and the structure is epitaxially grown along [0001]]Direction; the buffer layer 102 is made of AlN and has a thickness of 15 nm; the material of the N-type semiconductor transport layer 103 is Al0.60Ga0.405N, the thickness is 3.7 μm; the MQW layer 105 is made of 5 periods of Al0.45Ga0.55N/Al0.55Ga0.45N layer, wherein quantum barrier Al0.55Ga0.45The thickness of N is 6nm, and the quantum well Al0.45Ga0.55The thickness of N is set to be 1 nm; the P-type electron blocking layer 106 is made of Al0.65Ga0.35N, the thickness is 10 nm; the P-type semiconductor hole transport layer 107 is made of Al0.40Ga0.60N, the thickness is 50 nm; the P-type heavily doped semiconductor hole transport layer 108 is made of GaN and has a thickness of 50 nm.
The deep ultraviolet light emitting diode device epitaxial structure with the electron injection layer is prepared by the following steps:
firstly, baking the substrate 101 in an MOCVD reaction furnace at a high temperature of 1300 ℃, and removing foreign matters on the surface of the substrate 101;
secondly, epitaxially growing an AlN buffer layer 102 with the thickness of 15nm on the surface of the substrate 101 treated in the first step in an MOCVD reaction furnace, wherein the growth temperature is 800 ℃, and the air pressure is 80mbar, so that dislocation defects are filtered, and stress generated by lattice mismatch is released;
thirdly, epitaxially growing an N-type semiconductor transmission layer 103 of Al material with a thickness of 3.7 μm on the buffer layer 102 obtained in the second step in an MOCVD reaction furnace0.60Ga0.40N, doping concentration of 3e18cm-3The growth temperature is 1200 ℃, and the air pressure is 30 mbar;
and a fourth step of epitaxially growing an electron decelerating layer 104 on the N-type semiconductor transport layer 103 obtained in the third step in an MOCVD reactor. Wherein the electron injection layer 104 is along [ 0001%]The directional material is Al0.58Ga0.42N/Al0.56Ga0.44N/Al0.54Ga0.46N, doping concentration of 8e17cm-3,6e17cm-3And 4e17cm-3Each layer is 0.1 μm thick; the growth temperature is 1200 ℃, and the air pressure is 80 mbar;
fifth, a multiple quantum well layer 105 is epitaxially grown on the electron injection layer 104 obtained in the fourth step in the MOCVD reactor. Wherein, quantum barrier Al0.55Ga0.45N thickness of 6nm, quantum well Al0.45Ga0.55The thickness of N is 1nm, the growth period of the multiple quantum well is 5, the growth temperature is 1100 ℃, and the air pressure is 40 mbar;
and sixthly, epitaxially growing a P-type current barrier layer 106 on the multi-quantum well layer 105 obtained in the fifth step in an MOCVD reaction furnace, wherein the thickness is 10nm, the growth temperature is 1050 ℃, and the gas pressure is 80 mbar. Continuously growing a P-type semiconductor transmission layer 107 with the thickness of 50nm and a P-type heavily doped semiconductor transmission layer 108 with the thickness of 50nm, wherein the growth temperature is 1150 ℃ and the air pressure is 80 mbar;
thus, the deep ultraviolet light emitting diode epitaxial structure with the electron injection layer is prepared.
Example 3
The other steps of this embodiment are the same as those of embodiment 2, except that the material of the electron injection layer in this embodiment is Alx1Iny1Ga1-x1-y1N, wherein x1 is along [0001] in the range of 0.60 ≦ x1 ≦ 0.50]Continuously linearly decreasing, and the thickness is 0.4 μm
The above examples are only preferred embodiments of the present invention, it should be noted that: for those skilled in the art, without departing from the principle of the present invention, several equivalents may be made, and the technical solutions obtained by performing the equivalents on the claims of the present invention all fall within the scope of the present invention.
The invention is not the best known technology.
Claims (10)
1. A deep ultraviolet light emitting diode epitaxial structure with an electron injection layer is characterized in that: the semiconductor device comprises a substrate (101), a buffer layer (102), an N-type semiconductor transmission layer (103), an electron injection layer (104), a multi-quantum well layer (105), a P-type current blocking layer (106), a P-type semiconductor transmission layer (107) and a P-type heavily doped semiconductor transmission layer (108).
2. The deep ultraviolet light emitting diode epitaxial structure with the electron injection layer as claimed in claim 1, wherein: the electron injection layer (104) is made of Alx1Ga1-x1N, wherein x1 is 0-1, 0-1-x 1-1, wherein x1 is in the range of 0-1 x 1-1 along [0001]]([000-1]) The direction is continuously or stepwise linearly decreasing (increasing), non-linearly decreasing (increasing), or a combination of both linearly and non-linearly decreasing (increasing).
3. The deep ultraviolet light emitting diode epitaxial structure with the electron injection layer as claimed in claims 1-2, wherein: the substrate (101) is one of sapphire, SiC, Si, AlN, GaN or quartz glass; the difference of the substrate along the epitaxial growth direction can be classified into a polar plane [0001] substrate or a negative plane [000-1] substrate.
4. The deep ultraviolet light emitting diode epitaxial structure with the electron injection layer as claimed in claims 1 to 3, wherein: the buffer layer (102) is made of Alx2Ga1-x2N; wherein x2 is more than or equal to 0 and less than or equal to 1, x2 is more than or equal to 0 and less than or equal to 1, and the thickness is 10-50 nm.
5. The deep ultraviolet light emitting diode epitaxial structure with the electron injection layer as claimed in claims 1 to 4, wherein: the thickness of the electron-decelerating layer is 0.01-1 μm, and the doping concentration is continuously or stepwise linearly decreased, non-linearly decreased or linearly decreased along the growth direction compared with the doping concentration of the N-type semiconductor transmission layer (103)The combination of the linearity and the nonlinearity is decreased, and the doping concentration of the n-type impurity is 1e17～1e19cm-3(ii) a The material of the N-type semiconductor transmission layer (103) is Alx3Ga1-x3N; wherein x3 is more than or equal to 0 and less than or equal to 1, x3 is more than or equal to 0 and less than or equal to 1, and the thickness is 1-5 mu m; the proportion of the area of the exposed part to the total area of the N-type semiconductor transmission layer is 5% -90%, and the thickness range is 1-5 mu m.
6. The deep ultraviolet light emitting diode epitaxial structure with the electron injection layer as claimed in claims 1 to 5, wherein: the material of the multi-quantum well layer (105) is Alx4Ga1-x4N/Alx5Ga1-x5N; wherein x4 is more than or equal to 0 and less than or equal to 1, x4 is more than or equal to 0 and less than or equal to 1, x5 is more than or equal to 0 and less than or equal to 1, 1-x5 is more than or equal to 1, the forbidden bandwidth of the quantum barrier is higher than that of the quantum well, and the number of the quantum wells is more than or equal to 1; quantum well Alx4Ga1-x4N is 0.5-5 nm thick and quantum barrier Alx5Ga1-x5The thickness of N is 3-50 nm.
7. The deep ultraviolet light emitting diode epitaxial structure with the electron injection layer as claimed in claims 1 to 6, wherein: characterized in that the P-type current barrier layer (6) is made of Alx6Ga1-x6N; wherein x6 is more than or equal to 0 and less than or equal to 1, x6 is more than or equal to 0 and less than or equal to 1, and the thickness is 10-100 nm.
8. The deep ultraviolet light emitting diode epitaxial structure with the electron injection layer as claimed in claims 1 to 7, wherein: the material of the P-type semiconductor transmission layer (107) is Alx7Ga1-x7N; wherein x7 is more than or equal to 0 and less than or equal to 1, x7 is more than or equal to 0 and less than or equal to 1, and the thickness is 50-250 nm.
9. The deep ultraviolet light emitting diode epitaxial structure with the electron injection layer as claimed in claims 1 to 8, wherein: the material of the P-type heavily doped semiconductor transmission layer (108) is Alx8Ga1-x8N; wherein x8 is more than or equal to 0 and less than or equal to 1, 0-x 8 is more than or equal to 1, the material doping is P-type heavy doping, and the thickness is 10-50 nm.
10. A preparation method of a deep ultraviolet light emitting diode epitaxial structure with an electron injection layer comprises the following steps:
firstly, baking a substrate in an MOCVD (metal organic chemical vapor deposition) or MBE (molecular beam epitaxy) reaction furnace at 950-1400 ℃ to remove foreign matters on the surface of the substrate;
secondly, epitaxially growing GaN, AlN, AlGaN or superlattice serving as a buffer layer on the surface of the substrate treated in the first step in an MOCVD or MBE reaction furnace, wherein the thickness of the buffer layer is 10-50 nm;
step three, epitaxially growing an N-type semiconductor transmission layer on the buffer layer obtained in the step two in an MOCVD or MBE reaction furnace, wherein the thickness of the N-type semiconductor transmission layer is 1-5 microns;
fourthly, in an MOCVD or MBE reaction furnace, epitaxially growing an electron injection layer on the N-type semiconductor transmission layer obtained in the third step, wherein the electron injection layer is made of Alx1Ga1-x1N, wherein x1 is 0-1, 0-1-x 1-1, wherein x1 is in the range of 0-1 x 1-1 along [0001]]([000-1]) The direction is continuously or stepwisely and linearly decreased (increased), non-linearly decreased (increased) or a combination of linear and non-linear decreased (increased), the thickness is 0.01 to 1 μm, the doping concentration is continuously or stepwisely and linearly decreased, non-linearly decreased or a combination of linear and non-linear decreased compared with the doping concentration of the N-type semiconductor transmission layer along the growth direction, the doping concentration of the N-type impurity is 1e17～1e19cm-3；
Fifthly, in MOCVD or MBE reaction furnace, epitaxially growing multiple quantum well on the electron injection layer obtained in the fourth step, wherein quantum barrier Alx5Ga1-x5N is 3-50 nm thick, quantum well Alx4Ga1-x4The thickness of N is 0.5-5 nm, the forbidden bandwidth of the quantum barrier is higher than that of the quantum well, and the number of the quantum wells is greater than or equal to 1;
sixthly, epitaxially growing a P-type electron barrier layer Al on the multi-quantum well layer obtained in the fifth step in an MOCVD or MBE reaction furnacex6Ga1-x6N, the thickness is 10-100 nm; then, continue to growA long P-type semiconductor hole transport layer with a thickness of 50-250 nm; and secondly, continuously growing a P-type heavily doped semiconductor hole transport layer with the thickness of 10-50 nm.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112993102A (en) * | 2021-05-11 | 2021-06-18 | 东南大学 | Ultraviolet light-emitting diode with electronic speed reduction layer structure |
| CN114551653A (en) * | 2022-01-20 | 2022-05-27 | 北京大学 | Method and device for improving Micro-LED communication performance by using graphical diamond material |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112993102A (en) * | 2021-05-11 | 2021-06-18 | 东南大学 | Ultraviolet light-emitting diode with electronic speed reduction layer structure |
| CN114551653A (en) * | 2022-01-20 | 2022-05-27 | 北京大学 | Method and device for improving Micro-LED communication performance by using graphical diamond material |
| CN114551653B (en) * | 2022-01-20 | 2023-08-22 | 北京大学 | Method and device for improving Micro-LED communication performance by using patterned diamond material |
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