CN112466985A - Low-pressure diffusion process for improving uniformity of diffusion sheet resistance single chip - Google Patents
Low-pressure diffusion process for improving uniformity of diffusion sheet resistance single chip Download PDFInfo
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- CN112466985A CN112466985A CN202011193978.6A CN202011193978A CN112466985A CN 112466985 A CN112466985 A CN 112466985A CN 202011193978 A CN202011193978 A CN 202011193978A CN 112466985 A CN112466985 A CN 112466985A
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 43
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 98
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 48
- 230000003647 oxidation Effects 0.000 claims abstract description 32
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims abstract description 14
- 230000001590 oxidative effect Effects 0.000 claims abstract description 5
- 238000001816 cooling Methods 0.000 claims abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 23
- 229910052760 oxygen Inorganic materials 0.000 claims description 23
- 239000001301 oxygen Substances 0.000 claims description 23
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 18
- 229910052698 phosphorus Inorganic materials 0.000 claims description 18
- 239000011574 phosphorus Substances 0.000 claims description 18
- 235000012431 wafers Nutrition 0.000 claims description 15
- 239000010453 quartz Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 6
- 230000003247 decreasing effect Effects 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
- 229910001882 dioxygen Inorganic materials 0.000 claims 2
- 230000000694 effects Effects 0.000 abstract description 6
- 239000000969 carrier Substances 0.000 abstract description 4
- 238000005247 gettering Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 2
- 238000005215 recombination Methods 0.000 abstract description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
The invention relates to a low-pressure diffusion process for improving the uniformity of a diffusion sheet resistance single chip, which is prepared by adopting a tubular low-pressure diffusion oxidation furnace and comprises the following steps: s1, low-temperature normal-pressure boat entering: s2, vacuumizing: s3, alternately filling nitrogen and oxidizing at low temperature and low pressure for two times: s4, knot pushing for three times: s5, low-temperature low-pressure oxidation: s6, filling nitrogen, cooling and boosting pressure: and S7, taking out the boat. The process improves the uniformity of the diffusion sheet resistance single chip, enables the P-N junctions in the silicon chip to grow uniformly and consistently, improves the oxidation gettering effect, reduces the number of recombination centers of minority carriers, prolongs the service life of the minority carriers, and achieves the effect of improving the efficiency of the battery piece.
Description
Technical Field
The invention belongs to the field of solar photovoltaic, and particularly relates to a low-pressure diffusion process for improving the uniformity of a diffusion sheet resistor.
Background
With the continuous development of scientific technology, the large-scale production of solar cells and the continuous increase of yield, new technology is continuously developed by a production party from each manufacturing process link of the solar cells so as to achieve the purposes of improving efficiency and reducing production cost, wherein an improvement step is urgently needed in a low-pressure diffusion process link, the capacity of low-pressure diffusion single tubes is increasingly improved at present, and the lengths of corresponding low-pressure diffusion quartz tubes and quartz boats are also increased along with the continuous transition of single tube diffusion capacity from 400 pieces, 800 pieces, 1200 pieces, 1400 pieces, 1600 pieces and the like, so that the technology for adjusting the nonuniformity of single tubes is particularly important and urgently needed to solve the problem of obtaining uniform diffusion P-N junctions in the low-pressure diffusion process after the capacity is greatly increased.
Disclosure of Invention
In view of the above, the invention provides a low-pressure diffusion process for improving the uniformity of a diffusion sheet resistance single chip, so that the growth of P-N junctions in a silicon chip is uniform and consistent, the oxidation gettering effect is improved, the number of recombination centers of minority carriers is reduced, the service life of the minority carriers is prolonged, and the effect of improving the efficiency of a battery piece is achieved.
The specific technical scheme of the invention is as follows:
a low-pressure diffusion process for improving the uniformity of diffusion sheet resistance single sheets is characterized in that the process is prepared by adopting a tubular low-pressure diffusion oxidation furnace and comprises the following steps:
s1, low-temperature normal-pressure boat entering: inserting the silicon wafers after texturing back to back into a quartz boat, placing the silicon wafers on a furnace paddle after loading to prepare a boat entering process, introducing nitrogen with a certain flow into the furnace, and opening a furnace door to send the quartz boat into a furnace tube;
s2, vacuumizing: closing the furnace door after the boat is fed, and vacuumizing the furnace tube;
s3, alternately filling nitrogen and oxidizing at low temperature and low pressure for two times: performing low-temperature low-pressure nitrogen charging oxidation twice, wherein the temperature of the second nitrogen charging and oxidation is the same as that of the first nitrogen charging and oxidation, the flow of oxygen introduced for the second oxidation is decreased by 15-30% compared with that of the first oxidation, and correspondingly, the flow of nitrogen introduced for the second oxidation is increased by 15-30% compared with that of the first oxidation, and the pressure is increased by 15-30%;
s4, knot pushing for three times: introducing a phosphorus source at high temperature and low pressure for three times, introducing the phosphorus source, oxygen and nitrogen at a certain flow rate into the furnace tube after introducing the phosphorus source for 2 times at high temperature and low pressure, wherein the pressure of the three times is set to be constant, the flow rates of the phosphorus source and the oxygen are in a decreasing trend of 15-30%, the introduction amount of the nitrogen is in an increasing trend of 15-30%, and the temperature is in a gradually increasing trend between 810 and 870 ℃;
s5, low-temperature low-pressure oxidation: resetting the pressure and temperature in the furnace tube, introducing a certain amount of oxygen, and maintaining for a period of time;
s6, filling nitrogen, cooling and boosting pressure: passing a large amount of nitrogen into the furnace tube;
s7, taking out of the boat: and (4) opening the furnace door, pulling out the carrier by the furnace paddle, and closing the furnace door after the process is finished.
Further, in step S1, the temperature of the furnace tube is set to 780-800 ℃, nitrogen gas with a flow rate of 5000-10000 sccm is introduced into the furnace tube under normal pressure, and the quartz boat is conveyed into the furnace tube after the process lasts for 500-600S.
Further, in step S2, the normal pressure is pumped to a low pressure state of 70-100 mbar for 120-200S.
Further, in the step S3, the temperature of the furnace tube is controlled to be 800-810 ℃ by first nitrogen filling and oxidation, the low pressure in the furnace tube is set to be 70-150 mbar, nitrogen with the flow rate of 800-2500 sccm is filled, oxygen with the flow rate of 500-2500 sccm is filled, and the gas filling time is 80-250S each time.
Further, in the third pushing in step S4, the pressure in the furnace tube is set to 70-150 mbar for the first pushing, the phosphorus source and the oxygen are introduced at a flow rate of 300-900 sccm, the nitrogen is introduced at a flow rate of 800-2500 sccm, and the gas introduction time is 200-500S each time.
Further, in step S5, the pressure in the furnace tube is set to 200-600 mbar, the temperature is controlled to 810-830 ℃, oxygen with the flow rate of 300-900 sccm is introduced, and the duration time is 500-1300S.
Further, in step S6, the temperature is controlled to be 780-810 ℃, nitrogen with the flow rate of 5000-10000 sccm is introduced, and the duration is 100-300S.
Further, in step S7, the boat is taken out under normal pressure, and nitrogen with a flow rate of 5000-10000 sccm is introduced into the furnace tube.
The process of the invention improves the gas field environment of oxygen and oxygen gettering by alternately filling nitrogen and oxidizing at low temperature and low pressure twice before the phosphorus source is introduced, and repairs the condition that the in-furnace wafer oxide layer in the quartz tube grows unevenly due to the over-high pumping speed of the tail gas pump under low pressure, thereby realizing the uniform gradient difference between the silicon wafer edge oxide layer and the silicon wafer intermediate oxide layer at each temperature zone in the tube, laying a good foundation for the subsequent diffusion of phosphorus atoms at the silicon wafer edge and the silicon wafer intermediate, matching the proper introduction times and introduction amount of phosphorus oxychloride, comprehensively realizing the uniform deposition amount of phosphorus at the silicon wafer edge and the silicon wafer intermediate, realizing the uniform growth uniformity of the P-N junction of the silicon wafer, and achieving the effect of improving the diffusion square resistance single wafer, the good ohmic contact matching performance after the pattern is printed by the screen printing is improved, and the oxygen gettering effect before the phosphorus oxychloride is introduced is improved.
Additional aspects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Detailed Description
The embodiments described below by reference are exemplary only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
The process for improving the uniformity of the diffusion sheet resistance single chip is prepared by adopting a tubular low-pressure diffusion oxidation furnace, and comprises the following steps:
s1, low-temperature normal-pressure boat entering: inserting the silicon wafers after texturing back to back into a quartz boat, placing the quartz boat on a furnace paddle after loading, preparing a boat entering process, introducing nitrogen with a certain flow into the furnace, opening a furnace door, and sending the quartz boat into a furnace tube, specifically, setting the temperature of the furnace tube to be 780-800 ℃, introducing nitrogen with a flow of 5000-10000 sccm under a normal pressure state, continuing for 500-600 s, and sending the quartz boat into the furnace tube;
s2, vacuumizing: closing the furnace door after the boat is fed, and vacuumizing the furnace pipe, wherein the normal pressure is pumped to a low pressure state of 70-100 mbar for 120-200 s;
s3, alternately filling nitrogen and oxidizing at low temperature and low pressure for two times: performing low-temperature low-pressure nitrogen filling oxidation twice, wherein the secondary nitrogen filling and oxidation are the same as the first temperature, the flow of oxygen introduced for the secondary oxidation is gradually reduced by 15% -30% compared with the first time, the corresponding flow of nitrogen introduced for the secondary oxidation is increased by 15% -30% compared with the first time, the pressure is gradually increased by 15% -30%, the temperature of the furnace tube is controlled to be 800-810 ℃ in the first nitrogen filling oxidation, the low pressure in the furnace tube is set to be 70-150 mbar, nitrogen with the flow of 800-2500 sccm is introduced, oxygen with the flow of 500-2500 sccm is introduced, and the gas introduction time is 80-250 s each time;
s4, knot pushing for three times: introducing a phosphorus source into the furnace tube for three times, introducing the phosphorus source, oxygen and nitrogen into the furnace tube for 2 times of high-temperature low-pressure oxidation in the process of introducing the phosphorus source, wherein the phosphorus source, the oxygen and the nitrogen are introduced at certain flow rates, the pressure of the three times is set to be constant, the flow rates of the phosphorus source and the oxygen are in a decreasing trend of 15% -30%, the introduction amount of the nitrogen is in an increasing trend of 15% -30%, the temperature is in a gradually increasing trend between 810 and 870 ℃, in the concrete three times of pushing, the pressure in the furnace tube is set to be 70-150 mbar in the first pushing, the phosphorus source and the oxygen are respectively introduced at 300-900 sccm flow rates, the nitrogen is introduced at 800-2500 sccm flow
S5, low-temperature low-pressure oxidation: resetting the pressure and the temperature in the furnace tube, introducing a certain amount of oxygen, and maintaining for a period of time, specifically setting the pressure in the furnace tube to be 200-600 mbar, controlling the temperature to be 810-830 ℃, introducing oxygen with the flow rate of 300-900 sccm, and continuing for 500-1300 s;
s6, filling nitrogen, cooling and boosting pressure: passing a large amount of nitrogen into the furnace tube, specifically controlling the temperature in the furnace tube to be 780-810 ℃, introducing nitrogen with the flow of 5000-10000 sccm, and lasting for 100-300 s;
s7, taking out of the boat: and (4) taking out the boat at the normal pressure state, opening the furnace door, pulling out the carrying boat by the furnace paddle, introducing nitrogen with the flow of 5000-10000 sccm into the furnace tube, closing the furnace door, and ending the process.
After the diffusion process of the embodiment is used, a four-probe method is adopted to test that the single sheet unevenness value of the sheet resistance of 49 points of the silicon wafer is within 3% (the single sheet unevenness value = (the maximum value of the sheet resistance-the minimum value of the sheet resistance)/the sum of the single sheet unevenness value and the sheet resistance), the sheet resistance is controlled to be between 120 omega/sq and 125 omega/sq in the embodiment, the short-circuit voltage of the battery piece is increased by 1 millivolt, the short-circuit current is increased by 35 milliampere, and the efficiency is improved by 0.06%.
While specific embodiments of the invention have been described in detail with reference to exemplary embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this invention. In particular, reasonable variations and modifications are possible in the component parts and/or arrangements of the sub-combinations within the scope of the foregoing disclosure and the appended claims without departing from the spirit of the invention. Except variations and modifications in the component parts and/or arrangements, the scope of which is defined by the appended claims and equivalents thereof.
Claims (8)
1. A low-pressure diffusion process for improving the uniformity of diffusion sheet resistance single sheets is characterized in that the process is prepared by adopting a tubular low-pressure diffusion oxidation furnace and comprises the following steps:
s1, low-temperature normal-pressure boat entering: inserting the silicon wafers after texturing back to back into a quartz boat, placing the silicon wafers on a furnace paddle after loading to prepare a boat entering process, introducing nitrogen with a certain flow into the furnace, and opening a furnace door to send the quartz boat into a furnace tube;
s2, vacuumizing: closing the furnace door after the boat is fed, and vacuumizing the furnace tube;
s3, alternately filling nitrogen and oxidizing at low temperature and low pressure for two times: performing low-temperature low-pressure nitrogen charging oxidation twice, wherein the temperature of the second nitrogen charging and oxidation is the same as that of the first nitrogen charging and oxidation, the flow of oxygen introduced for the second oxidation is decreased by 15-30% compared with that of the first oxidation, and correspondingly, the flow of nitrogen introduced for the second oxidation is increased by 15-30% compared with that of the first oxidation, and the pressure is increased by 15-30%;
s4, knot pushing for three times: introducing a phosphorus source at high temperature and low pressure for three times, introducing the phosphorus source, oxygen and nitrogen at a certain flow rate into the furnace tube after introducing the phosphorus source for 2 times at high temperature and low pressure, wherein the pressure of the three times is set to be constant, the flow rates of the phosphorus source and the oxygen are in a decreasing trend of 15-30%, the introduction amount of the nitrogen is in an increasing trend of 15-30%, and the temperature is in a gradually increasing trend between 810 and 870 ℃;
s5, low-temperature low-pressure oxidation: resetting the pressure and temperature in the furnace tube, introducing a certain amount of oxygen, and maintaining for a period of time;
s6, filling nitrogen, cooling and boosting pressure: passing a large amount of nitrogen into the furnace tube;
s7, taking out of the boat: and (4) opening the furnace door, pulling out the carrier by the furnace paddle, and closing the furnace door after the process is finished.
2. The low-pressure diffusion process for improving the uniformity of diffusion sheet resistance as claimed in claim 1, wherein in step S1, the temperature of the furnace tube is set to 780-800 ℃, nitrogen gas with a flow rate of 5000-10000 sccm is introduced into the furnace tube under normal pressure, and the quartz boat is fed into the furnace tube after the process lasts 500-600S.
3. The low-pressure diffusion process for improving the uniformity of diffusion sheet resistance of claim 1, wherein in step S2, the atmospheric pressure is pumped to a low pressure of 70-100 mbar for 120-200S.
4. The low-pressure diffusion process for improving the uniformity of diffusion sheet resistance as claimed in claim 1, wherein in step S3, the first nitrogen filling and oxidation is performed to control the temperature of the furnace tube to be 800-810 ℃, the low pressure in the furnace tube is set to be 70-150 mbar, the nitrogen gas is introduced at a flow rate of 800-2500 sccm, and the oxygen gas is introduced at a flow rate of 500-2500 sccm for 80-250S each time.
5. The low-pressure diffusion process for improving the uniformity of a diffusion sheet resistor as claimed in claim 1, wherein in the third pushing step of step S4, the pressure in the furnace tube is set to 70-150 mbar in the first pushing step, 300-900 sccm of phosphorus source and oxygen are respectively introduced, and 800-2500 sccm of nitrogen is introduced, and the time for introducing the gas is 200-500S each time.
6. The low-pressure diffusion process for improving the uniformity of the diffusion sheet resistor as claimed in claim 1, wherein in step S5, the pressure in the furnace tube is set to 200-600 mbar, the temperature is controlled to 810-830 ℃, oxygen gas with a flow rate of 300-900 sccm is introduced, and the duration is 500-1300S.
7. The low-pressure diffusion process for improving the uniformity of the diffusion sheet resistor of claim 1, wherein in step S6, the temperature is controlled to 780-810 ℃, nitrogen is introduced at a flow rate of 5000-10000 sccm for a duration of 100-300S.
8. The low-pressure diffusion process for improving the uniformity of diffusion sheet resistors as claimed in claim 1, wherein in step S7, the boat is taken out under normal pressure, and nitrogen is introduced into the furnace tube at a flow rate of 5000-10000 sccm.
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| CN202011193978.6A CN112466985B (en) | 2020-10-30 | 2020-10-30 | Low-pressure diffusion process for improving uniformity of diffusion sheet resistance single chip |
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| CN202011193978.6A CN112466985B (en) | 2020-10-30 | 2020-10-30 | Low-pressure diffusion process for improving uniformity of diffusion sheet resistance single chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115036394A (en) * | 2022-07-04 | 2022-09-09 | 江苏润阳光伏科技有限公司 | Oxidation process of PERC battery |
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| CN111384210A (en) * | 2019-12-27 | 2020-07-07 | 横店集团东磁股份有限公司 | High open voltage diffusion high sheet resistance process for PERC (permanent resistance resistor) overlapped SE (selective emitter current) |
-
2020
- 2020-10-30 CN CN202011193978.6A patent/CN112466985B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS544063A (en) * | 1977-06-13 | 1979-01-12 | Hitachi Ltd | Low pressure deposition method for impurity |
| CN104409339A (en) * | 2014-11-12 | 2015-03-11 | 浙江晶科能源有限公司 | P diffusion method of silicon wafer and preparation method of solar cell |
| JP2018174276A (en) * | 2017-03-31 | 2018-11-08 | 日立化成株式会社 | Method for manufacturing p-type diffusion layer-attached semiconductor substrate, p-type diffusion layer-attached semiconductor substrate, solar battery device, and method for manufacturing solar battery device |
| CN107681018A (en) * | 2017-09-14 | 2018-02-09 | 横店集团东磁股份有限公司 | A kind of low-pressure oxidized technique of solar battery sheet |
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| CN110323304A (en) * | 2019-04-12 | 2019-10-11 | 江苏润阳悦达光伏科技有限公司 | Low pressure spreads low-temperature oxidation gettering process |
| CN110190153A (en) * | 2019-05-31 | 2019-08-30 | 江苏顺风光电科技有限公司 | Efficient selective emitter solar battery diffusion technique |
| CN111384210A (en) * | 2019-12-27 | 2020-07-07 | 横店集团东磁股份有限公司 | High open voltage diffusion high sheet resistance process for PERC (permanent resistance resistor) overlapped SE (selective emitter current) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115036394A (en) * | 2022-07-04 | 2022-09-09 | 江苏润阳光伏科技有限公司 | Oxidation process of PERC battery |
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